CN109989026A - The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration - Google Patents
The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration Download PDFInfo
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- CN109989026A CN109989026A CN201711491877.5A CN201711491877A CN109989026A CN 109989026 A CN109989026 A CN 109989026A CN 201711491877 A CN201711491877 A CN 201711491877A CN 109989026 A CN109989026 A CN 109989026A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as bulky grain to the loss during the pollution of film and Plasma Transport.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias compound tube and perforated baffle combination unit and power supply, sample stage, grid bias power supply kymographion and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, it is adjusted using energy of the grid bias power supply to arc-plasma, the bulky grain defect in arc-plasma is eliminated by liner combination unit and multi-stage magnetic field device and improves the efficiency of transmission in filter device, loss in a vacuum chamber is reduced, technological parameter is set, carries out film preparation.
Description
Technical field
The present invention relates to the arc ion platings of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration, belong to material
Technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
In sink 33333 product conditions to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.)
It has made " S " magnetic filter in article to be filtered the bulky grain of cathode arc, there are also American scholar Anders et al.
(Anders A, MacGill R A. Twist filter for the removal of macroparticles from
Cathodic arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) propose Twist
The Magnetic filter of filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter
(macroscopic particles removal technology research [D] in Dai Hua vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), this
Although a little methods have certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes
Ion current density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc
The method that straight tube filtering is proposed in straight filter (publication number: CN1632905, publication date: on June 29th, 2005), still
Which in turn reduces filter effects.In short, relevant researcher is by comparing various Magnetic filter method (Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J] Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping after magnetic filter
High efficiency of transmission and elimination bulky grain is very difficult to take into account, and drastically influences application of the technology in high-quality thin-film deposition.
In addition the electric field suppressing method of bias is used on matrix, when applying back bias voltage on matrix, electric field will be to electronegative big
Grain generates repulsive interaction, and then reduces the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich
W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks
Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or
Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn
Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect
Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary
The problems such as pollution of thin film composition caused by sputtering, in conjunction with multi-stage magnetic field filter method and liner bias conical pipe, straight tube with it is porous
Compound action that the constraint of baffle combination device own form and biasing electric field attract contains in arc-plasma to eliminate
Bulky grain defect, at the same guarantee arc-plasma with higher efficiency of transmission by liner bias conical pipe, straight tube with it is porous
Baffle combination device and multi-stage magnetic field filter device recycle grid bias power supply to thoroughly remove from multi-stage magnetic field device and liner bias
Remaining bulky grain is possible in the arc-plasma for transmitting out in conical pipe, straight tube and perforated baffle combination unit to lack
It falls into, workpiece surface is made to adjust ion energy in the case where applying back bias voltage, prepare continuous, fine and close high-quality thin-film, while real
Now to target elements content addition control, the biography for reducing the production cost using alloys target, improving arc-plasma in film
Defeated efficiency, increase film deposition velocity and decrease or even eliminate bulky grain defect to film microstructure, continuous compact deposits
With the adverse effect of service performance, proposes a kind of combination field and liner conical pipe, straight tube and perforated baffle combination unit are multiple
The arc ion plating of mould assembly filtering.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic
Field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe, straight tube and perforated baffle combine the unit (6), liner bias plasma
Source (7), sample stage (8), grid bias power supply kymographion (9) and vacuum chamber (10)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (8) in vacuum chamber (10), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, straight tube and perforated baffle combination unit (6) and vacuum chamber (10), workpiece are placed on sample stage (8), sample
Platform (8) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (10), connects arc power
(2) cathode output end, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias conical pipe, straight tube and perforated baffle combination unit (6) connect interior
The cathode output end of grid bias power supply (7) is served as a contrast, power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (10), to the vacuum degree in vacuum chamber (10) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (9), grid bias power supply (1) can be straight to 0.01Pa~10Pa
Stream, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, and the bias amplitude of output, pulse frequency and pulse are wide
Degree is adjusted, and the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, and pulse is wide
Degree 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe, straight tube and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3
Grade or a variety of hierarchical structures such as 4 grades and inlet and outlet layout, pass through non-magnetic riveting between conical pipes and straight tube or conical pipe at different levels
Nail is connected and fixed, and the internal diameter that the outer diameter and conical pipe and straight tube of perforated baffle combine the unit cooperates through magnetism-free stainless steel
Together, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe, straight tube combine rivet assembly connection with perforated baffle
Device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid multi-stage magnetic field device (4) under linerless board status
Inside pipe wall pollution and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement liner baffle pollutant secondary splashing
Penetrate the pollution for causing thin film composition；Perforated baffle spacing in liner bias conical pipe, straight tube and perforated baffle combination unit (6)
It is matched with the outlet of the length of magnetic field at different levels and conical pipe at different levels and straight tube or conical pipe of multi-stage magnetic field device (4), conical pipe
With the length of straight tube combination unitHIt is identical with the length of multi-stage magnetic field device (4), conical pipe and straight tube combination unit right side import
The internal diameter at placeD IntoGreater than the outer diameter in arc ion plating target source (3), the outer diameter of conical pipe and straight tube combination unit is less than multi-stage magnetic field
The internal diameter of device (4), the internal diameter in exitD OutCombination, technological parameter and target of coupling apparatus etc. determine that perforated baffle can be with
Size, baffle spacing and the structure combination for cooperating conical pipe and straight tube combination unit design baffle, according to different targets and technique
Parameter carries out the internal diameter at selection conical pipe and straight tube combination unit left side outletD OutWith the internal diameter of right side entranceD Into, porous gear
The structure of pore size, type and baffle at different levels in plate combines, and combines the unit entrance and outlet by conical pipe and straight tube
The internal diameter at place changes and the motion path of baffle arrangement combination limitation bulky grain, realizes to shield the mechanical stop of bulky grain and make
With；Activity insulation is assembled between liner bias conical pipe, straight tube and perforated baffle combination unit (6) and multi-stage magnetic field device (4)
Together, the length of liner bias conical pipe, straight tube and perforated baffle combination unit (6)HWith the length of multi-stage magnetic field device (4)
It is identical, according to the configuration of different targets and technological parameter selection liner bias conical pipe, straight tube and perforated baffle combination unit (6)
Scheme realizes the scavenging effect constrained using own form to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, straight tube and perforated baffle combination unit (6) are according to more
Grade magnetic field device (4) internal diameter and the outer diameter in arc ion plating target source (3) determine liner bias conical pipe, straight tube and perforated baffle group
The outer diameter and inner diameter for setting (6) inlet and outlet position is attached together, liner bias conical pipe, straight tube and perforated baffle combine the unit (6) basis
Length and rigidity need to select suitable thickness, process according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, straight tube and perforated baffle combination unit (6) keep direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse biased type
Adjustable pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee liner bias conical pipe, straight tube and more
Hole baffle combination device (6) attracts bulky grain, repels to depositing ions, reduces arc-plasma and passes in pipe
Loss during defeated reduces the bulky grain defect even being eliminated in arc-plasma, improves the transmission of arc-plasma
The deposition velocity of efficiency and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, more
Pulse, DC pulse be compound or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse
Type generates periodical or continual and steady attraction to bulky grain defect during the deposition process, greatly reduces bulky grain and passes through
The probability of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6)；
Grid bias power supply (1) guarantees to attract arc-plasma while removing remaining bulky grain and adjust to reach matrix surface
Arc-plasma energy, reduce arc-plasma loss in the vacuum chamber (10), realize the fast deposition of film；
Arc ion plating target source (3) and multi-stage magnetic field device (4) use direct water-cooling mode, avoid the temperature liter in the course of work
High problem has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee entire vacuum system just
Often operation.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. multi-stage magnetic field filter device can guarantee electric arc in target material surface by the constraint in magnetic field
Stable motion generates lasting arc-plasma, and makes arc-plasma in multistage magnetic by the magnetic line of force of multi-stage magnetic field
High efficiency of transmission in field device, also change arc-plasma and the motion path of bulky grain defect come the separation both realized,
It is further reduced the bulky grain defect even being eliminated in arc-plasma；B. liner bias conical pipe, straight tube and perforated baffle
Combination unit continue to bulky grain or periodically by that can apply direct current, pulse or the compound positive bias of DC pulse
Effective attraction, to depositing ions carry out continue or periodically repel, can also be shaken by the bipolar pulse of positive back bias voltage
It swings, reduces loss of the plasma in pipe in transmission process, further increase the efficiency of transmission and film of arc-plasma
Deposition velocity；C. liner bias conical pipe, straight tube and perforated baffle combination unit can be bored by own form using multistage
The shapes such as multiple combinations and the variation of internal diameter outer diameter, the pass of perforated baffle, aperture and spacing between shape pipe and straight tube or conical pipe
Shape and motion path limitation realize that the mechanical stop screen effect to bulky grain defect, the direction of motion of limitation bulky grain defect are come
The bulky grain defect in arc-plasma is eliminated, liner bias conical pipe, straight tube and the flexible of perforated baffle combination unit are torn open
It unloads, cleaning is convenient, it is possible to prevente effectively from causing thin film composition to the secondary sputtering of liner apparatus surface pollutant after target replacement
Pollution；D. pulsed bias power supply utilizes electric field by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
Inhibit repelling effect to realize remaining bulky grain defect eliminate and optimizes the adjusting of arc-plasma energy；E. institute
The microstructure and properties for preparing film can be adjusted by pulsed bias parameter, using the type of pulsed bias, amplitude,
Pulse width and frequency realize the pinning effect that energetic ion grows film, improve the texture and stress shape of film growth
State improves bond strength, improves the service performance of film；F. by multiple using multi-stage magnetic field and liner compound tube and perforated baffle
Film prepared by the arc ion plating of filtering is closed, the bulky grain defect in film is eliminated, reduces arc-plasma and exist
Loss in filter device and vacuum chamber improves the service efficiency of arc-plasma, realizes the quick preparation of film, and can
To guarantee that film crystal tissue and microstructure are finer and close, be conducive to the service performance for further increasing film.
The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration, the device can singly cover or
More set combinations, and multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle is combined to combine the unit the more of (6)
Seed type combination, to prepare pure metal film, the compound ceramic film of different element ratios, function film and have nanometer more
The film of layer or gradient-structure can also cover using single set or mostly the device and combine using Traditional DC magnetron sputtering, pulse
Magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or the compound biasing device of DC pulse,
It realizes that the compound of two or more depositional mode carries out film deposition, prepares pure metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the assembly letter of the arc ion plating of multi-stage magnetic field of the present invention and liner compound tube and perforated baffle combined filtration
Figure；Fig. 2 is the structure diagram and perforated baffle, liner compound tube of liner bias conical pipe, straight tube and perforated baffle combination unit
Typical structure diagram.
Specific embodiment
Specific embodiment 1: illustrating present embodiment, present embodiment multi-stage magnetic field and liner below with reference to Fig. 1 and 2
The arc ion plating of compound tube and perforated baffle combined filtration institute use device includes grid bias power supply (1), arc power (2), electric arc
Ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe, straight tube and perforated baffle group
It attaches together and sets (6), liner grid bias power supply (7), sample stage (8), grid bias power supply kymographion (9) and vacuum chamber (10)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (8) in vacuum chamber (10), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, straight tube and perforated baffle combination unit (6) and vacuum chamber (10), workpiece are placed on sample stage (8), sample
Platform (8) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (10), connects arc power
(2) cathode output end, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias conical pipe, straight tube and perforated baffle combination unit (6) connect interior
The cathode output end of grid bias power supply (7) is served as a contrast, external water-cooling circulating system and power supply total control switch are opened；
Film deposition: it will be vacuumized in vacuum chamber (10), to the vacuum degree in vacuum chamber (10) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (9), grid bias power supply (1) can be straight to 0.01Pa~10Pa
Stream, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, and the bias amplitude of output, pulse frequency and pulse are wide
Degree is adjusted, and the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, and pulse is wide
Degree 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity (as shown in Figure 1)；
Liner bias conical pipe, straight tube and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3
Grade or a variety of hierarchical structures such as 4 grades and inlet and outlet layout (as shown in Figs. 1-2), it is logical between conical pipes and straight tube or conical pipe at different levels
It crosses non-magnetic rivet interlacement to fix, the internal diameter mutual cooperation that the outer diameter of perforated baffle is combined the unit with conical pipe and straight tube passes through
The rivet assembly connection of magnetism-free stainless steel together, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe, straight tube with
Perforated baffle combination unit (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid more under linerless board status
The inside pipe wall pollution of grade magnetic field device (4) and it is difficult to the problem of clearing up, and it is possible to prevente effectively from liner baffle after target replacement
The secondary sputtering of pollutant causes the pollution of thin film composition；In liner bias conical pipe, straight tube and perforated baffle combination unit (6)
Perforated baffle spacing and the length of magnetic field at different levels of multi-stage magnetic field device (4) and the outlet of conical pipe at different levels and straight tube or conical pipe
It matches, the length of conical pipe and straight tube combination unitHIt is identical with the length of multi-stage magnetic field device (4), conical pipe and straight tube group
Attach together the internal diameter for setting right side entranceD IntoGreater than the outer diameter in arc ion plating target source (3), conical pipe and straight tube combination unit it is outer
Diameter is less than the internal diameter of multi-stage magnetic field device (4), the internal diameter in exitD OutCombination, technological parameter and target of coupling apparatus etc. are true
Fixed, perforated baffle can cooperate conical pipe and straight tube to combine the unit size, baffle spacing and the structure combination of design baffle (as schemed
Shown in 2), the internal diameter at selection conical pipe and straight tube combination unit left side outlet is carried out according to different targets and technological parameterD OutWith
The internal diameter of right side entranceD Into, pore size in perforated baffle, type and baffle at different levels structure combination, by conical pipe and
Straight tube combines the unit the internal diameter variation of entrance and exit and the motion path of baffle arrangement combination limitation bulky grain, realization pair
The mechanical stop shielding action of bulky grain；Liner bias conical pipe, straight tube and perforated baffle combination unit (6) and multi-stage magnetic field fill
It sets activity insulation between (4) to be assembled together, the length of liner bias conical pipe, straight tube and perforated baffle combination unit (6)HWith
The length of multi-stage magnetic field device (4) is identical, according to different targets and technological parameter selection liner bias conical pipe, straight tube with it is porous
The allocation plan of baffle combination device (6) realizes the scavenging effect (as shown in Figure 2) constrained using own form to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, straight tube and perforated baffle combination unit (6) are according to more
Grade magnetic field device (4) internal diameter and the outer diameter in arc ion plating target source (3) determine liner bias conical pipe, straight tube and perforated baffle group
The outer diameter and inner diameter for setting (6) inlet and outlet position is attached together, liner bias conical pipe, straight tube and perforated baffle combine the unit (6) basis
Length and rigidity need to select suitable thickness, process according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, straight tube and perforated baffle combination unit (6) keep direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse biased type
Adjustable pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee liner bias conical pipe, straight tube and more
Hole baffle combination device (6) attracts bulky grain, repels to depositing ions, reduces arc-plasma and passes in pipe
Loss during defeated reduces the bulky grain defect even being eliminated in arc-plasma, improves the transmission of arc-plasma
The deposition velocity of efficiency and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, more
Pulse, DC pulse be compound or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse
Type generates periodical or continual and steady attraction to bulky grain defect during the deposition process, greatly reduces bulky grain and passes through
The probability of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6)；
Grid bias power supply (1) guarantees to attract arc-plasma while removing remaining bulky grain and adjust to reach matrix surface
Arc-plasma energy, reduce arc-plasma loss in the vacuum chamber (10), realize the fast deposition of film；
Arc ion plating target source (3) and multi-stage magnetic field device (4) use direct water-cooling mode, avoid the temperature liter in the course of work
High problem has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee entire vacuum system just
Often operation.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic
Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios
Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration is filtered using multi-stage magnetic field and is filled
That sets guarantees that electric arc generates lasting arc-plasma in the stable motion of target material surface by magnetically confined, and by more
The magnetic line of force in grade magnetic field makes high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc-plasma and big
The motion path of grain defect is further reduced the bulky grain even being eliminated in arc-plasma and lacks come the separation both realized
It falls into；It is combined the unit using liner bias conical pipe, straight tube and perforated baffle and applies direct current, pulse or the compound positively biased of DC pulse
Pressure continue to bulky grain or periodically effectively attract, effectively avoids bulky grain problem caused by low melting material, right
Depositing ions continue or periodically repel, and can also be vibrated by the bipolar pulse of positive back bias voltage, reduce plasma
Loss of the body in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition velocity of film, interior
Multi-stage taper pipe, straight tube, porous can be utilized by own form by serving as a contrast bias conical pipe, straight tube and perforated baffle combination unit
The various structures of baffle combine and the structure group between the variation of internal diameter outer diameter, the type of baffle holes, aperture, pitch of holes and baffle at different levels
The mechanical stop screen effect realized to bulky grain defect is closed, limits the motion path of bulky grain defect to eliminate arc plasma
Bulky grain defect in body reduces bulky grain by liner bias conical pipe, straight tube and perforated baffle combination unit and reaches deposition
The probability of sample surfaces；Liner bias conical pipe, straight tube and perforated baffle combination unit, can be with by non-magnetic rivet interlacement
Realize fast quick-detach installation, cleaning is convenient, avoids asking for the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status
Topic causes the pollution of thin film composition to the secondary sputtering of liner apparatus surface pollutant after can also effectively avoiding target from replacing；
Pulsed bias power supply repels effect by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency, using the inhibition of electric field
It should realize and remaining bulky grain defect eliminate and the adjusting of arc-plasma energy is optimized, near improvement matrix etc.
The section Potential Distributing of gas ions sufficiently attracts arc-plasma to workpiece motion s, realizes the fast deposition of film；It is prepared
The microstructure and properties of film can be adjusted by pulsed bias parameter, utilize the type, amplitude, pulse of pulsed bias
Width and frequency realize the pinning effect that energetic ion grows film, improve the texture and stress state of film growth,
Bond strength is improved, the service performance of film is improved；Also stablize lasting, ionization level using the generation of arc ion plating (aip) simultaneously
High metallic plasma is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares different element ratios
Compound ceramic film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；It is logical
It crosses using film prepared by the arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration, eliminates thin
Bulky grain defect in film reduces loss of the arc-plasma in filter device and vacuum chamber, avoids different targets
Pollution of the inner lining apparatus surface residues to film caused by replacing, improves the service efficiency of arc-plasma, realizes thin
The quick preparation of film is optimized the Energy distribution of arc-plasma using pulsed bias, and can guarantee film crystal tissue
It is finer and close with microstructure, be conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind
Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece
Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, connection multi-stage magnetic field with it is interior
The arc ion plating apparatus of compound tube and perforated baffle combined filtration is served as a contrast, is opened arc power (2), is opened multi-stage magnetic field power supply (5)
It adjusts multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe, straight tube and perforated baffle combine the unit
(6) direct current positive bias is kept, is opened grid bias power supply (1), technical arrangement plan, film deposition is carried out, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, connection multi-stage magnetic field with it is interior
The arc ion plating apparatus of compound tube and perforated baffle combined filtration is served as a contrast, is opened arc power (2), is opened multi-stage magnetic field power supply (5)
It adjusts multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe, straight tube and perforated baffle combine the unit
(6) direct current positive bias is kept, is opened grid bias power supply (1), technical arrangement plan, carries out film deposition, and combine Traditional DC magnetic
The one or two kinds of above method for controlling sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc combines, then
Apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse biasing device on workpiece and carry out film deposition,
Other are identical as embodiment two.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with
On arc ion plating target source (3), multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combine the unit
(6) arc ion plating of the multi-stage magnetic field and liner compound tube and perforated baffle combined filtration that combine is carried out with various pure metal members
Element and multicomponent alloy material are that the film of target deposits, and combines Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc
The combination of one or two kinds of above method of ion plating and pulsed cathode arc, then apply Dc bias, pulsed bias on workpiece
Or the compound biasing device of DC pulse carries out film deposition, preparing has different stress, microstructure and element ratio
Multilayer films.
Claims (5)
1. the arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration, which is characterized in that the device packet
Include grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), interior
It serves as a contrast bias conical pipe, straight tube and perforated baffle and combines the unit (6), liner grid bias power supply (7), sample stage (8), grid bias power supply waveform
Oscillograph (9) and vacuum chamber (10)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (8) in vacuum chamber (10), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, straight tube and perforated baffle combination unit (6) and vacuum chamber (10), workpiece are placed on sample stage (8), sample
Platform (8) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (10), connects arc power
(2) cathode output end, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative anodes
Connection is determined according to output magnetic direction, and it is inclined that liner bias conical pipe, straight tube and perforated baffle combination unit (6) connect liner
The cathode output end of voltage source (7) opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (10), to the vacuum degree in vacuum chamber (10) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (9) to 0.01Pa~10Pa, grid bias power supply (1) be direct current,
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width
It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1
~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe, straight tube and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3
Grade or a variety of hierarchical structures such as 4 grades and inlet and outlet layout, pass through non-magnetic riveting between conical pipes and straight tube or conical pipe at different levels
Nail is connected and fixed, and the internal diameter that the outer diameter and conical pipe and straight tube of perforated baffle combine the unit cooperates through magnetism-free stainless steel
Together, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe, straight tube combine rivet assembly connection with perforated baffle
Device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid multi-stage magnetic field device (4) under linerless board status
Inside pipe wall pollution and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement liner baffle pollutant secondary splashing
Penetrate the pollution for causing thin film composition；Perforated baffle spacing in liner bias conical pipe, straight tube and perforated baffle combination unit (6)
It is matched with the outlet of the length of magnetic field at different levels and conical pipe at different levels and straight tube or conical pipe of multi-stage magnetic field device (4), conical pipe
With the length of straight tube combination unitHIt is identical with the length of multi-stage magnetic field device (4), conical pipe and straight tube combination unit right side import
The internal diameter at placeD IntoGreater than the outer diameter in arc ion plating target source (3), the outer diameter of conical pipe and straight tube combination unit is less than multi-stage magnetic field
The internal diameter of device (4), the internal diameter in exitD OutCombination, technological parameter and target of coupling apparatus etc. determine that perforated baffle can be with
Size, baffle spacing and the structure combination for cooperating conical pipe and straight tube combination unit design baffle, according to different targets and technique
Parameter carries out the internal diameter at selection conical pipe and straight tube combination unit left side outletD OutWith the internal diameter of right side entranceD Into, porous gear
The structure of pore size, type and baffle at different levels in plate combines, and combines the unit entrance and outlet by conical pipe and straight tube
The internal diameter at place changes and the motion path of baffle arrangement combination limitation bulky grain, realizes to shield the mechanical stop of bulky grain and make
With；Activity insulation is assembled between liner bias conical pipe, straight tube and perforated baffle combination unit (6) and multi-stage magnetic field device (4)
Together, the length of liner bias conical pipe, straight tube and perforated baffle combination unit (6)HWith the length of multi-stage magnetic field device (4)
It is identical, according to the configuration of different targets and technological parameter selection liner bias conical pipe, straight tube and perforated baffle combination unit (6)
Scheme realizes the scavenging effect constrained using own form to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, straight tube and perforated baffle combination unit (6) are according to more
Grade magnetic field device (4) internal diameter and the outer diameter in arc ion plating target source (3) determine liner bias conical pipe, straight tube and perforated baffle group
The outer diameter and inner diameter for setting (6) inlet and outlet position is attached together, liner bias conical pipe, straight tube and perforated baffle combine the unit (6) basis
Length and rigidity need to select suitable thickness, process according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, straight tube and perforated baffle combination unit (6) keep direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse biased type
By adjusting pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantees liner bias conical pipe, straight tube and more
Hole baffle combination device (6) attracts bulky grain, repels to depositing ions, reduces arc-plasma and passes in pipe
Loss during defeated reduces the bulky grain defect even being eliminated in arc-plasma, improves the transmission of arc-plasma
The deposition velocity of efficiency and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, more
Pulse, DC pulse be compound or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse
Type generates periodical or continual and steady attraction to bulky grain defect during the deposition process, greatly reduces bulky grain and passes through
The probability of multi-stage magnetic field device (4) and liner bias conical pipe, straight tube and perforated baffle combination unit (6)；
Grid bias power supply (1) guarantees to attract arc-plasma while removing remaining bulky grain and adjust to reach matrix surface
Arc-plasma energy, reduce arc-plasma loss in the vacuum chamber (10), realize the fast deposition of film；
Arc ion plating target source (3) and multi-stage magnetic field device (4) use direct water-cooling mode, avoid the temperature liter in the course of work
High problem has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee entire vacuum system just
Often operation.
2. the arc ion plating of multi-stage magnetic field according to claim 1 and liner compound tube and perforated baffle combined filtration,
It is characterized in that, institute's use device further includes grid bias power supply kymographion (9), the pulse that display grid bias power supply (1) issues is electric
Pressure and current waveform, by adjusting the output waveform of grid bias power supply (1), to from multi-stage magnetic field and liner compound tube and perforated baffle
The plated film ion transmitted in the arc ion plating of combined filtration is effectively attracted, carry out sample surfaces film deposition and
The ratio of deposition targets element in the film is controlled, the adjusting of plasma energy is realized and it is possible that remaining bulky grain lacks
It is trapped into the removing of row electric field repulsion.
3. the arc ion plating of multi-stage magnetic field according to claim 1 and liner compound tube and perforated baffle combined filtration,
It is characterized in that, the device is using single set or more set combinations, and combine multi-stage magnetic field device (4) and liner bias conical pipe,
Straight tube is combined with the multiple types of perforated baffle combination unit (6), to prepare the compound of pure metal film, different element ratios
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure.
4. the arc ion plating of multi-stage magnetic field according to claim 1 and liner compound tube and perforated baffle combined filtration,
It is characterized in that, using single set or covering the device more and combining using Traditional DC magnetron sputtering, pulsed magnetron sputtering, tradition electricity
The combination of one or two kinds of above method of arc ion plating and pulsed cathode arc, then application Dc bias, pulse are inclined on workpiece
Pressure or DC pulse compound biasing device are realized that the compound of two or more depositional mode carries out film deposition, are come
It prepares pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer or gradient-structure
Film.
5. the arc ion plating of multi-stage magnetic field according to claim 1 and liner compound tube and perforated baffle combined filtration,
It is characterized in that, working gas selects argon gas or working gas to select one kind or more in nitrogen, acetylene, methane, silane or oxygen
The mixed gas of kind, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer
The film of multilayer or gradient-structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711491877.5A CN109989026A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711491877.5A CN109989026A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration |
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Citations (3)
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|---|---|---|---|---|
| CN1804105A (en) * | 2006-01-20 | 2006-07-19 | 大连理工大学 | Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating |
| CN106637097A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method |
| CN106756823A (en) * | 2017-01-22 | 2017-05-31 | 魏永强 | Liner positive bias conical pipe and the compound multi-stage magnetic field arc ions electroplating method of straight tube |
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2017
- 2017-12-30 CN CN201711491877.5A patent/CN109989026A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1804105A (en) * | 2006-01-20 | 2006-07-19 | 大连理工大学 | Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating |
| CN106637097A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method |
| CN106756823A (en) * | 2017-01-22 | 2017-05-31 | 魏永强 | Liner positive bias conical pipe and the compound multi-stage magnetic field arc ions electroplating method of straight tube |
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