CN109989029A - The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration - Google Patents
The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration Download PDFInfo
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- CN109989029A CN109989029A CN201711492197.5A CN201711492197A CN109989029A CN 109989029 A CN109989029 A CN 109989029A CN 201711492197 A CN201711492197 A CN 201711492197A CN 109989029 A CN109989029 A CN 109989029A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field filter device.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias conical pipe and ladder pipe combination unit and grid bias power supply, movable coil device and power supply, grid bias power supply kymographion etc.；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, the energy of arc-plasma is adjusted using grid bias power supply, it is combined the unit by liner bias conical pipe and ladder pipe and multi-stage magnetic field device eliminates the bulky grain defect in arc-plasma and improves the efficiency of transmission in filter device, loss in a vacuum chamber is reduced, setting technological parameter prepares film.
Description
Technical field
The present invention relates to the arc ion platings of combination field and liner bias conical pipe and ladder pipe combined filtration, belong to material
Expect technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks
Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or
Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn
Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect
Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary
It the problems such as pollution of thin film composition caused by sputtering, is combined in conjunction with multi-stage magnetic field filter method and liner bias conical pipe with ladder pipe
The mechanical stop of device own form shields and biasing electric field attracts compound action contains in arc-plasma to eliminate
Bulky grain defect, while guaranteeing that arc-plasma is combined by liner bias conical pipe with ladder pipe with higher efficiency of transmission
Device and multi-stage magnetic field filter device, recycle the control of movable coil device from multi-stage magnetic field device and liner bias conical pipe with
The transmission direction of the arc-plasma that ladder pipe combination unit transmits out in a vacuum chamber, is realized to position any in vacuum chamber
The control and regulation for setting the film deposition and thin film composition on substrate work-piece surface, overcome due to vacuum chamber space and the design of target source layout
Film caused by caused deposition position limitation or base shape limit deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field
It is possible to remaining big in the arc-plasma for transmitting out in device and liner bias conical pipe and ladder pipe combination unit
Grain defect makes workpiece surface adjust ion energy in the case where applying back bias voltage, prepares continuous, fine and close high-quality thin-film,
It realizes simultaneously and target elements content addition in film is controlled, the production cost using alloys target is reduced, improves arc plasma
The efficiency of transmission of body, the deposition velocity for increasing film and decrease or even eliminate bulky grain defect to film microstructure, continuous cause
The adverse effect of close deposition and service performance, proposes a kind of combination field and liner bias conical pipe and ladder pipe combined filtration
Arc ion plating.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic
Field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe and ladder pipe combination unit (6), liner grid bias power supply (7),
Movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), grid bias power supply waveform show
Wave device (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and ladder pipe combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample
Platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13)
On, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each defeated of multi-stage magnetic field power supply (5)
Outlet, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe and ladder pipe combination unit (6)
The cathode output end of liner grid bias power supply (7) is connect, movable coil device (8) is connected by the positive and negative anodes input terminal on flange port and lived
Moving winding installation's power source (9), rheostat device (10) are connected with movable coil device (8), access and movable coil installation's power source
(9) in circuit, electric-opening source total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and ladder pipe combination unit (6) can cooperate multi-stage magnetic field device (4) to design liner bias taper
The structure that outer diameter, liner bias conical pipe and the ladder pipe of pipe and ladder pipe combination unit combine the unit can also cooperate multistage magnetic
2 grades of ladder pipes are combined with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes and conical pipe for field device (4) design
The structure of combination and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, ladder pipes at different levels
It is connected and fixed between conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe and ladder
Activity insulation is assembled together between pipe combination unit (6) and multi-stage magnetic field device (4), and apparent surface pollution level is dismantled clearly in time
Reason and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and are difficult to the problem of clearing up, Yi Jike
Cause the pollution of thin film composition with the secondary sputtering of liner ladder pipe pollutant after effectively avoiding target from replacing；Liner bias taper
The length of magnetic field at different levels and ladder pipe at different levels of pipe and ladder pipe combination unit (6) and multi-stage magnetic field device (4) and going out for conical pipe
Mouth matches, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (4), the internal diameter of entrance on the right side of ladder pipeD IntoIt is greater than
The outer diameter in arc ion plating target source (3), and be less than the internal diameter of multi-stage magnetic field device (4), according to different targets and technological parameter into
The mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit in row selection；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determined according to the diameter of target, cooling, transmission range length, internal-and external diameter,
Thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (6) are according to multi-stage magnetic field device (4) internal diameter
Determine the outer diameter of liner bias conical pipe and ladder pipe combination unit (6), liner bias conical pipe and ladder pipe combination unit (6)
It is needed that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (7), liner bias conical pipe and ladder pipe combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are adjustable
Pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias conical pipe and ladder pipe combine the unit
(6) bulky grain is attracted, depositing ions is repelled, reduce damage of the arc-plasma in pipe in transmission process
Consumption reduces the bulky grain defect that even is eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, multiple-pulse, direct current arteries and veins
Compound or Bipolar pulse power is rushed, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, are depositing
Periodical or continual and steady attraction is generated to bulky grain defect in the process, greatly reduces bulky grain and passes through multi-stage magnetic field device
(4) and liner bias conical pipe and ladder pipe combination unit (6) probability；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
The arc-plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) transmission is made,
Using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 degree
Flexure type, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part
Tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination (three of straight line, circular arc and straight line
Section intersection and tangent combination) and circular arc, straight line and circular arc the typical coil such as combination (tangent between three and intersect)
Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher
Efficiency of transmission reach matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by base shape limits deposits problem of non-uniform, carries out the fast deposition of film；Standardsizing rheostat device (10)
Output resistance, realizes the positive bias variation on movable coil device (8), and the electric field that positive bias generates may be implemented to multi-stage magnetic field
Electronics and residual in the arc-plasma that transmission comes out in device (4) and liner bias conical pipe and ladder pipe combination unit (6)
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device
(8) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (8) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；It is living
It is suitable that the positive and negative anodes of moving winding installation's power source (9) are provided according to magnetic field strength, direction and cooling system to movable coil device (8)
Electric current, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil device (8) output of entire vacuum system
Suitable magnetic field, the path transmission for setting arc-plasma according to movable coil device (8) guarantee to remaining bulky grain
Matrix surface is reached with high efficiency of transmission while removing, arc-plasma loss in vacuum chamber (13) is avoided, realizes
The fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is lived using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device
Moving winding can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions),
The combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc of straight line, circular arc and straight line are (between three
Tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission path
It needs to be determined, realizes effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias
The further removing of remaining bulky grain defect, reduces arc-plasma in vacuum chamber in conical pipe and ladder pipe combination unit
Loss in transmission process further increases the efficiency of transmission of arc-plasma and thin by the guidance in movable coil magnetic field
The deposition velocity of film overcomes deposition position limitation caused by designing due to vacuum chamber space and target source layout or base shape limit
Film caused by making deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also pass through change
Device device is hindered, the series impedance of movable coil is adjusted, realizes the adjustment to movable coil itself positive bias parameter, is realized to electricity
The attraction of electronics and remaining bulky grain in arc plasma, transmission effect of the Lai Tisheng arc-plasma in movable coil
Rate eliminates remaining bulky grain defect, increases the deposition velocity of film；B. multi-stage magnetic field filter device can pass through the pact in magnetic field
Beam guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and the magnetic line of force for passing through multi-stage magnetic field
Make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also changes the movement of arc-plasma and bulky grain defect
Path is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；C. liner bias
Conical pipe and ladder pipe combination unit by the way that direct current, pulse or the compound positive bias of DC pulse can be applied, to bulky grain into
Row continues or periodically effectively attracts, continue to depositing ions or periodically repel, and can also pass through positive back bias voltage
Bipolar pulse oscillation, reduce loss of the plasma in pipe in transmission process, further increase arc-plasma
The deposition velocity of efficiency of transmission and film；D. liner bias conical pipe and ladder pipe combination unit can be led to by own form
Cross the internal diameter variation of conical pipe and ladder pipe combination unit entrance and exit and the knot of conical pipe and ladder pipe combination unit
Structure combination limits the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma, it is logical to reduce bulky grain
The probability that ladder pipe device reaches deposited samples surface is crossed, realizes and the mechanical stop of bulky grain is shielded, liner bias conical pipe
With the flexible disassembly of ladder pipe combination unit, cleaning is convenient, and the inside pipe wall for avoiding multi-stage magnetic field device under linerless board status is dirty
Dye cleaning the problem of, and it is possible to prevente effectively from target replacement after, secondary sputtering of the different targets to liner ladder pipe pollutant
Cause the pollution of thin film composition；E. pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
Rate is realized using the inhibition repelling effect of electric field and eliminate and to arc-plasma energy to remaining bulky grain defect
Adjust optimization；F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, inclined using pulse
Type, amplitude, pulse width and the frequency of pressure realize the pinning effect that energetic ion grows film, improve the crystalline substance of film growth
Body tissue and stress state improve bond strength, improve the service performance of film；G. by utilizing combination field and liner bias
Film prepared by the arc ion plating of conical pipe and ladder pipe combined filtration, eliminates the bulky grain defect in film, reduces
Loss of the arc-plasma in filter device and vacuum chamber improves the service efficiency of arc-plasma, realizes thin
The quick preparation of film, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase film
Service performance.
The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration, the device can singly cover or
Person covers combination more, and combines multi-stage magnetic field device (4), liner bias conical pipe and ladder pipe combination unit (6) and movable coil
The multiple types of device (8) combine, to prepare compound ceramic film, the function film of pure metal film, different element ratios
And the film with nanometer multilayer or gradient-structure, the device can also be covered using single set or mostly and combined using Traditional DC magnetic
It controls sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse is multiple
Biasing device is closed, realizes that the compound of two or more depositional mode carries out film deposition, prepares pure metal film, no
With the compound ceramic film of element ratio, function film and high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the assembly of the arc ion plating of combination field and liner bias conical pipe of the present invention and ladder pipe combined filtration
Schematic diagram；Fig. 2 is 7 kinds of topology layouts of movable coil；Fig. 3 is the typical structure of liner bias conical pipe and ladder pipe combination unit
Schematic diagram.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1,2 and 3, present embodiment combination field and interior
Lining bias conical pipe and ladder pipe combined filtration arc ion plating institute use device include grid bias power supply (1), arc power (2),
Arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe are combined with ladder pipe
Device (6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample
Sample platform (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and ladder pipe combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample
Platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13)
On, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each defeated of multi-stage magnetic field power supply (5)
Outlet, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe and ladder pipe combination unit (6)
The cathode output end of liner grid bias power supply (7) is connect, movable coil device (8) is connected by the positive and negative anodes input terminal on flange port and lived
Moving winding installation's power source (9) opens external water-cooling circulating system and power supply total control switch；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and ladder pipe combination unit (6) can cooperate multi-stage magnetic field device (4) to design liner bias taper
The structure that outer diameter, liner bias conical pipe and the ladder pipe of pipe and ladder pipe combination unit combine the unit can also cooperate multistage magnetic
2 grades of ladder pipes are combined with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes and conical pipe for field device (4) design
The structure of combination and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, ladder pipes at different levels
It is connected and fixed between conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe and ladder
Activity insulation is assembled together between pipe combination unit (6) and multi-stage magnetic field device (4), and apparent surface pollution level is dismantled clearly in time
Reason and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and are difficult to the problem of clearing up, Yi Jike
Cause the pollution of thin film composition with the secondary sputtering of liner ladder pipe pollutant after effectively avoiding target from replacing；Liner bias taper
The length of magnetic field at different levels and ladder pipe at different levels of pipe and ladder pipe combination unit (6) and multi-stage magnetic field device (4) and going out for conical pipe
Mouth matches, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (4), the internal diameter of entrance on the right side of ladder pipeD IntoIt is greater than
The outer diameter in arc ion plating target source (3), and be less than the internal diameter of multi-stage magnetic field device (4), according to different targets and technological parameter into
The mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit in row selection；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determined according to the diameter of target, cooling, transmission range length, internal-and external diameter,
Thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (6) are according to multi-stage magnetic field device (4) internal diameter
Determine the outer diameter of liner bias conical pipe and ladder pipe combination unit (6), liner bias conical pipe and ladder pipe combination unit (6)
It is needed that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (7), liner bias conical pipe and ladder pipe combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are adjustable
Pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias conical pipe and ladder pipe combine the unit
(6) bulky grain is attracted, depositing ions is repelled, reduce damage of the arc-plasma in pipe in transmission process
Consumption reduces the bulky grain defect that even is eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, multiple-pulse, direct current arteries and veins
Compound or Bipolar pulse power is rushed, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, are depositing
Periodical or continual and steady attraction is generated to bulky grain defect in the process, greatly reduces bulky grain and passes through multi-stage magnetic field device
(4) and liner bias conical pipe and ladder pipe combination unit (6) probability；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), realize to magnetic direction and magnetic
The adjusting of field intensity, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) come control from
The arc-plasma that multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) transmission come out, makes it
Matrix surface is reached with higher efficiency of transmission, deposition position caused by designing due to vacuum chamber space and target source layout is overcome to limit
Film caused by system or base shape limit deposits problem of non-uniform, carries out the fast deposition of film；Rheostat device (10)
Output resistance is adjusted, realizes the positive bias variation on movable coil device (8), the electric field that positive bias generates may be implemented to multistage
Electronics in the arc-plasma that transmission comes out in magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6)
Increase with the ion populations of the attraction of remaining bulky grain, and then the middle arc-plasma exported of increase movable coil device (8),
Efficiency of transmission of the arc-plasma in movable coil device (8) is promoted, remaining bulky grain defect is eliminated；Movable coil dress
It sets (8) and selects low-resistance copper tube, diameter, thickness and the length of copper pipe are logical according to the number of turns of movable coil device (8), coil
Road diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；
The positive and negative anodes of movable coil installation's power source (9) provide conjunction to movable coil device (8) according to magnetic field strength, direction and cooling system
The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (8) are defeated
Suitable magnetic field out, the path transmission for setting arc-plasma according to movable coil device (8) guarantee to remaining big
Matrix surface is reached with high efficiency of transmission while grain is removed, avoids arc-plasma loss in vacuum chamber (13), it is real
The fast deposition of existing film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic
Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios
Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration, utilizes movable coil device
Shape and magnetic field magnetic line layout, direction cooperation, movable coil can also use using 90 degree of classical flexure types
Straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line with
Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and the tangent group of straight line, circular arc and straight line
Close) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), circle therein
Arc and straight line portion are determined according to the needs of spatial position and transmission path, are realized to arc-plasma transmission path
Effectively control, to remaining bulky grain defect from multi-stage magnetic field device and liner bias conical pipe and ladder pipe combination unit
It further removes, reduces loss of the plasma in vacuum chamber transmission process, by the guidance in movable coil magnetic field, further
The efficiency of transmission of arc-plasma and the deposition velocity of film are improved, is overcome since vacuum chamber space and the design of target source layout are drawn
Film caused by the deposition position limitation risen or base shape limit deposits problem of non-uniform, can be in the optimum bit of vacuum chamber
The preparation for realizing film is set, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil
The attraction to electronics and remaining bulky grain in arc-plasma, Lai Tisheng electric arc are realized in the adjustment of itself positive bias parameter
Efficiency of transmission of the plasma in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Using more
Grade magnetic filtering device guarantees that electric arc in the stable motion of target material surface, generates lasting arc plasma by magnetically confined
Body, and high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change electric arc are made by the magnetic line of force of multi-stage magnetic field
Plasma and the motion path of bulky grain defect are further reduced come the separation both realized and even are eliminated arc-plasma
In bulky grain defect；It is compound using liner bias conical pipe and ladder pipe combination unit application direct current, pulse or DC pulse
Positive bias, to bulky grain carry out continue or periodically effectively attract, effectively avoid bulky grain caused by low melting material
Problem continue to depositing ions or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduced
Loss of the plasma in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition speed of film
Degree, liner bias conical pipe and ladder pipe combination unit can be combined the unit by own form by conical pipe and ladder pipe
The variation of the internal diameter in entrance and exit and conical pipe are combined with the structure that ladder pipe combines the unit, and limit the fortune of bulky grain defect
The bulky grain defect in arc-plasma is eliminated in dynamic path, is reduced bulky grain by ladder pipe device and is reached deposited samples table
The probability in face, realization shield the mechanical stop of bulky grain, the flexible disassembly of liner bias conical pipe and ladder pipe combination unit,
The problem of cleaning is convenient, avoids the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, and can effectively keep away
After exempting from target replacement, different targets cause the pollution of thin film composition to the secondary sputtering of liner ladder pipe pollutant；Pulsed bias
Power supply utilizes the inhibition repelling effect realization pair of electric field by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
Remaining bulky grain defect eliminate and optimizes to the adjusting of arc-plasma energy, improves plasma near matrix
Section Potential Distributing sufficiently attracts arc-plasma to workpiece motion s, realizes the fast deposition of film；Prepared film it is micro-
Seeing structure and performance can be adjusted by pulsed bias parameter, utilize the type of pulsed bias, amplitude, pulse width and frequency
Rate realizes the pinning effect that energetic ion grows film, improves the texture and stress state of film growth, improves and combines
Intensity improves the service performance of film；Also stablize metal lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously
Plasma is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound of different element ratios
Ceramic membrane, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；By utilizing group
Film prepared by the arc ion plating of magnetic field and liner bias conical pipe and ladder pipe combined filtration is closed, is eliminated in film
Bulky grain defect reduces loss of the arc-plasma in filter device and vacuum chamber, avoids different target replacements and draws
Pollution of the liner ladder pipe residue risen to film, improves the service efficiency of arc-plasma, realizes the quick of film
Preparation, the Energy distribution of arc-plasma is optimized using pulsed bias, and can guarantee film crystal tissue and microcosmic knot
Structure is finer and close, is conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind
Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece
Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, combination field and liner are inclined
Pressure conical pipe is connect with the arc ion plating of ladder pipe combined filtration, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe and ladder pipe combination unit (6) keep straight
Positive bias is flowed, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8), adjust variable resistance
The output resistance of device device (10), technical arrangement plan carry out film deposition, and preparation has different stress, microstructure
With the multilayer films of element ratio, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, combination field and liner are inclined
Pressure conical pipe is connect with the arc ion plating of ladder pipe combined filtration, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe and ladder pipe combination unit (6) keep straight
Positive bias is flowed, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8), adjust variable resistance
The output resistance of device device (10), technical arrangement plan carry out film deposition, and combine Traditional DC magnetron sputtering, pulsed magnetic
One or two kinds of above method combination of control sputtering, conventional arc ion plating and pulsed cathode arc, then apply directly on workpiece
Flow bias, pulsed bias, the compound bias of DC pulse or bipolar pulse biasing device carry out film deposition, other and embodiment party
Formula two is identical.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with
On arc ion plating target source (3), multi-stage magnetic field device (4), liner bias conical pipe and ladder pipe combination unit (6) and activity
The combination field and liner bias conical pipe and the arc ion plating of ladder pipe combined filtration of coil device (8) combination are carried out with each
Kind pure metal element and multicomponent alloy material are that the film of target deposits, and Traditional DC magnetron sputtering, impulse magnetron is combined to splash
It penetrates, one or two kinds of above method combination of conventional arc ion plating and pulsed cathode arc, then application direct current is inclined on workpiece
Pressure, pulsed bias or the compound biasing device of DC pulse carry out film deposition, preparation have different stress, microstructure and
The multilayer films of element ratio.
Claims (5)
1. the arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration, which is characterized in that the device
Including grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5),
Liner bias conical pipe and ladder pipe combination unit (6), liner grid bias power supply (7), movable coil device (8), movable coil fill
Set power supply (9), rheostat device (10) sample stage (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and ladder pipe combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample
Platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13)
On, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each defeated of multi-stage magnetic field power supply (5)
Outlet, positive and negative anodes connection are determined according to output magnetic direction, and liner bias conical pipe connects interior with ladder pipe combination unit (6)
The cathode output end of grid bias power supply (7) is served as a contrast, movable coil device (8) connects active line by the positive and negative anodes input terminal on flange port
Coil apparatus power supply (9), rheostat device (10) are connected with movable coil device (8), access and movable coil installation's power source (9)
In circuit, power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12) to 0.01Pa~10Pa, grid bias power supply (1) be direct current,
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width
It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1
~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and ladder pipe combination unit (6) can cooperate multi-stage magnetic field device (4) to design liner bias taper
The structure that outer diameter, liner bias conical pipe and the ladder pipe of pipe and ladder pipe combination unit combine the unit can also cooperate multistage magnetic
2 grades of ladder pipes are combined with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes and conical pipe for field device (4) design
The structure of combination and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, ladder pipes at different levels
It is connected and fixed between conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe and ladder
Activity insulation is assembled together between pipe combination unit (6) and multi-stage magnetic field device (4), and apparent surface pollution level is dismantled clearly in time
Reason and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and are difficult to the problem of clearing up, Yi Jike
Cause the pollution of thin film composition with the secondary sputtering of liner ladder pipe pollutant after effectively avoiding target from replacing；Liner bias taper
The length of magnetic field at different levels and ladder pipe at different levels of pipe and ladder pipe combination unit (6) and multi-stage magnetic field device (4) and going out for conical pipe
Mouth matches, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (4), the internal diameter of entrance on the right side of ladder pipeD IntoIt is greater than
The outer diameter in arc ion plating target source (3), and be less than the internal diameter of multi-stage magnetic field device (4), according to different targets and technological parameter into
The mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit in row selection；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determined according to the diameter of target, cooling, transmission range length, internal-and external diameter,
Thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (6) are according to multi-stage magnetic field device (4) internal diameter
Determine the outer diameter of liner bias conical pipe and ladder pipe combination unit (6), liner bias conical pipe and ladder pipe combination unit (6)
It is needed that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (7), liner bias conical pipe and ladder pipe combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type pass through adjusting
Pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias conical pipe and ladder pipe combine the unit
(6) bulky grain is attracted, depositing ions is repelled, reduce damage of the arc-plasma in pipe in transmission process
Consumption reduces the bulky grain defect that even is eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, pulse, multiple-pulse, direct current arteries and veins
Compound or Bipolar pulse power is rushed, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, are depositing
Periodical or continual and steady attraction is generated to bulky grain defect in the process, greatly reduces bulky grain and passes through multi-stage magnetic field device
(4) and liner bias conical pipe and ladder pipe combination unit (6) probability；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
The arc-plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and ladder pipe combination unit (6) transmission is made,
Using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 degree
Flexure type, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part
Tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination (three of straight line, circular arc and straight line
Section intersection and tangent combination) and circular arc, straight line and circular arc the typical coil such as combination (tangent between three and intersect)
Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher
Efficiency of transmission reach matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by base shape limits deposits problem of non-uniform, carries out the fast deposition of film；Standardsizing rheostat device (10)
Output resistance, realizes the positive bias variation on movable coil device (8), and the electric field that positive bias generates may be implemented to multi-stage magnetic field
Electronics and residual in the arc-plasma that transmission comes out in device (4) and liner bias conical pipe and ladder pipe combination unit (6)
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device
(8) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (8) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；It is living
It is suitable that the positive and negative anodes of moving winding installation's power source (9) are provided according to magnetic field strength, direction and cooling system to movable coil device (8)
Electric current, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil device (8) output of entire vacuum system
Suitable magnetic field, the path transmission for setting arc-plasma according to movable coil device (8) guarantee to remaining bulky grain
Matrix surface is reached with high efficiency of transmission while removing, arc-plasma loss in vacuum chamber (13) is avoided, realizes
The fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
2. the arc ions of combination field according to claim 1 and liner bias conical pipe and ladder pipe combined filtration
Plating, which is characterized in that institute's use device further includes grid bias power supply kymographion (12), the arteries and veins that display grid bias power supply (1) issues
Rush voltage and current waveform, by adjusting the output waveform of grid bias power supply (1), to from combination field and liner bias conical pipe with
The plated film ion transmitted in the arc ion plating of ladder pipe combined filtration is effectively attracted, and sample surfaces film is carried out
The ratio of deposition and control deposition targets element in the film realizes the adjusting of plasma energy and is possible to remaining big
Grain defect carries out electric field repulsion removing.
3. the arc ions of combination field according to claim 1 and liner bias conical pipe and ladder pipe combined filtration
Plating, which is characterized in that the device combines multi-stage magnetic field device (4), liner bias conical pipe using single set or more set combinations
It is combined with the multiple types of ladder pipe combination unit (6) and movable coil device (8), to prepare pure metal film, different elements
Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of ratio.
4. the arc ions of combination field according to claim 1 and liner bias conical pipe and ladder pipe combined filtration
Plating, which is characterized in that using single set or cover the device more and combine using Traditional DC magnetron sputtering, pulsed magnetron sputtering, biography
The combination of one or two kinds of above method of system arc ion plating and pulsed cathode arc, then apply Dc bias, arteries and veins on workpiece
Bias or the compound biasing device of DC pulse are rushed, realizes the compound heavy to carry out film of two or more depositional mode
Product, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer or gradient
The film of structure.
5. the arc ions of combination field according to claim 1 and liner bias conical pipe and ladder pipe combined filtration
Plating, which is characterized in that it is a kind of in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Or a variety of mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and have
The film of nanometer multilayer or gradient-structure.
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| CN201711492197.5A CN109989029A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration |
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| CN201711492197.5A CN109989029A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration |
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2017
- 2017-12-30 CN CN201711492197.5A patent/CN109989029A/en active Pending
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