CN206616266U - The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating - Google Patents
The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating Download PDFInfo
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- CN206616266U CN206616266U CN201720092262.4U CN201720092262U CN206616266U CN 206616266 U CN206616266 U CN 206616266U CN 201720092262 U CN201720092262 U CN 201720092262U CN 206616266 U CN206616266 U CN 206616266U
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- 238000007733 ion plating Methods 0.000 title claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 69
- 230000007547 defect Effects 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000010963 304 stainless steel Substances 0.000 claims 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000004913 activation Effects 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 22
- 238000010891 electric arc Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 5
- 230000008030 elimination Effects 0.000 description 5
- 238000003379 elimination reaction Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000721047 Danaus plexippus Species 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010921 in-depth analysis Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229940074869 marquis Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
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Abstract
The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating, belong to technical field of material surface treatment, and the utility model is to solve the problems, such as the loss in multi-stage magnetic field filter during pollution and Plasma Transport of the bulky grain to film.Device of the present utility model includes：Grid bias power supply, arc power, arc ion plating target source, multi-stage magnetic field device, multi-stage magnetic field power supply, liner positive bias straight tube and perforated baffle hybrid device, positively biased voltage source, sample stage, grid bias power supply kymographion and vacuum chamber；Thin film deposition：Attachment means, activation system treats that the vacuum in vacuum chamber is less than 10‑4During Pa, it is passed through working gas, open plated film power supply, grid bias power supply adjusts the energy of arc-plasma, bulky grain defect is eliminated by liner positive bias straight tube and perforated baffle hybrid device and multi-stage magnetic field device and efficiency of transmission of the arc-plasma in multi-stage magnetic field filter is improved, technological parameter is set, film preparation is carried out.
Description
Technical field
The present invention relates to the liner straight tube of multi-stage magnetic field arc ion plating and perforated baffle hybrid device, belong to material list
Face processing technology field.
Background technology
During arc ion plating prepares film, because arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, in the presence of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " in the film（Macroparticles）Defect（Boxman
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.）.
In arc-plasma, big is reached because the movement velocity of electronics was far longer than in the movement velocity of ion, unit interval
The electron number on grain surface is more than number of ions, makes bulky grain that elecrtonegativity is presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size in 0.1-10 microns of bulky grain defect just as PM2.5 is to the pollution of air quality, quality and property to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method, seriously constrains its answering in thin-film material of new generation preparation
With.
At present, it is also easy to produce greatly in the simple metal using low melting point or multicomponent alloy material to solve arc ions electroplating method
Grain defect problem, the method for using Magnetic filter main at present filters out bulky grain, and such as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device（Publication number：CN1150180, publication date：On May 21st, 1997）It is middle to use 90 °
Magnetic filter is filtered to the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan etc. of He'nan University (such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei filtered cathode arc plasmas prepare TiAlN thin film
Influence China YouSe Acta Metallurgica Sinica 2004,14 (8) of the middle sedimentary condition to film texture:1264-1268.) in article
Middle " S " magnetic filter that made is filtered to the bulky grain of cathode arc, also American scholar Anders et al.（Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
arc plasmas [J]. Surf Coat Tech, 2000, 133-134: 96-100.）The Twist filter's of proposition
Magnetic filter, although these methods have certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission of plasma is damaged
Lose seriously, substantially reduce ion current density.Based on that can filter on the basis of bulky grain can guarantee that efficiency again, Chinese patent is true
Empty cathode arc straight filter (publication number：CN1632905, publication date：On June 29th, 2005) the middle side for proposing straight tube filtering
Method, but which in turn reduces filter effect.In a word, related researcher is by contrasting various Magnetic filter methods（Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J] Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007, 35(4): 992-999.）It was found that arc ion plating plasma after magnetic filter by keeping
High efficiency of transmission and elimination bulky grain is very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.
In addition using the electric field suppressing method biased on matrix, when applying back bias voltage on matrix, electric field will be to electronegative big
Grain produces repulsive interaction, and then reduces the generation of film surface bulky grain defect.German scholar Olbrich et al.（Olbrich
W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991, 49(1-3):258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
using a pulsed bias voltage [J]. Mat Sci Eng A, 1991, 140: 830-837.）Using pulse
Bias to replace traditional Dc bias, form a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology, not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
It is high, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al.（Woods Guoqiang pulsed bias arc ion platings
Process ba- sis research [D] Dalian University of Technology, 2008. and Huang Meidong, woods Guoqiang, Dong Chuan, Sun Chao hear immediately inclined
Press Influencing Mechanism [J] Acta Metallurgica Sinicas to arc ion plating film surface appearance, 2003,39 (5): 510-515.）Pin
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis to pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, reduce film surface big
Grain defect counts, improve the quality of film, are widely used in actual production, but bulky grain can not be still completely eliminated and lacks
Fall into.Domestic scholars（Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, literary Zhenhua, Chen Liang thoroughbred horse multi-stage magnetic field straight tube Magnetic filters and pulse
The compound arc ions electroplating method of bias, publication number：CN103276362A, publication date：On September 4th, 2013）Propose many
The arc ions electroplating method that level magnetic field straight tube Magnetic filter is combined with pulsed bias, big is eliminated by multi-stage magnetic field filter
Grain defect and the efficiency of transmission for lifting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later stage correlation scholar（Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
Accord with the multi-stage magnetic field arc ions electroplating method of pallid light liner positive bias straight tubes, publication number：CN105925940A, publication date：
On September 7th, 2016）The multi-stage magnetic field arc ions electroplating method of liner positive bias straight tube is proposed to solve the pollution to inside pipe wall
Problem.The method that also scholar proposes dual-layered baffle plate（Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong
J, Sun C. Synthesis of titanium nitride thin films deposited by a new
shielded arc ion plating [J]. Appl Surf Sci, 2011, 257(13): 5694-5697.）, research
Affecting laws of the baffle plate spacing to film surface appearance, bulky grain elimination effect and sedimentation rate.Also scholar（Zhang Tao, marquis
Monarch reaches, Liu Zhiguo, the Chinese Surface Engineering of cathodic arc plasma source and its film preparation [J] of Zhang Yicong Magnetic filters,
2002, 02): 11-15+20-12.）The method for using for reference Bilek plates（Bilek M M M, Yin Y, McKenzie D R,
Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc
(FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966 vol.2）, apply transmission of the positive bias to improve plasma on the bend pipe of 90 degree of bend pipe magnetic filters and imitate
Rate.
The content of the invention
The invention aims to the simple metal or multicomponent alloy of low melting point are used for solution conventional arc ion electroplating method
Material and nonmetallic materials（Such as graphite）Bulky grain defect, flexure type Magnetic filter technology, which are also easy to produce, as target causes electric arc etc.
The low problem of gas ions efficiency of transmission, with reference to multi-stage magnetic field filter method and liner positive bias straight tube and the compound dress of perforated baffle
Put the compound action elimination arc-plasma that own form and the mechanical stop shielding of structure combination and positively biased piezoelectric field attract
In the bulky grain defect that contains, while ensure arc-plasma with higher efficiency of transmission by multi-stage magnetic field filter and
Liner positive bias straight tube and perforated baffle hybrid device, allow workpiece surface continuous, fine and close in the situation for applying back bias voltage
Prepare high-quality thin-film, while realize in film constituent content addition control, reduction using alloys target production cost, improve
The deposition efficiency of film and reduce bulky grain defect film is grown and performance adverse effect, it is proposed that multi-stage magnetic field electric arc from
The liner straight tube and perforated baffle hybrid device of son plating.
Device used in the present invention includes grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device
4th, multi-stage magnetic field power supply 5, liner positive bias straight tube and perforated baffle hybrid device 6, positively biased voltage source 7, sample stage 8, bias
Power supply wave shape oscillograph 9 and vacuum chamber 10；
In the device：
Pending substrate work-piece is placed on the sample stage 8 in vacuum chamber 10, and liner positive bias straight tube and perforated baffle are compound
Insulation between type device 6 and vacuum chamber 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the negative pole output of grid bias power supply 1
End, arc ion plating target source 3 is arranged on vacuum chamber 10, connects the cathode output end of arc power 2, multi-stage magnetic field device 4 it is at different levels
Magnetic field connects each output end of multi-stage magnetic field power supply 5, and both positive and negative polarity connection can be determined according to output magnetic direction, and liner is just
Bias straight tube and perforated baffle hybrid device 6 connect the cathode output end of positively biased voltage source 7, open outside water-cooling circulating system；
Thin film deposition：Vacuumized in vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work gas is passed through
Body to 0.01Pa~10Pa, grid bias power supply 1 and grid bias power supply kymographion 9 is opened, the bias amplitude that grid bias power supply 1 is exported,
Pulse frequency and pulse width modulation, the peak voltage of the output pulse of grid bias power supply 1 is 0~1.2kV, and pulse frequency is 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, and regulation is needed
The technological parameter wanted, the current value that arc power 2 is exported is 10 ~ 300A, and multi-stage magnetic field device 4 is adjusted by multi-stage magnetic field power supply 5,
Arc-plasma is kept in the stable generation in arc ion plating target source 3 and filtering elimination is carried out to bulky grain defect, makes electric arc etc.
Gas ions with higher efficiency of transmission by multi-stage magnetic field device 4 reach matrix surface, carry out film fast deposition, electric arc from
Son plating target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias straight tube and perforated baffle hybrid device 6 keep direct current positive bias, defeated
Go out voltage adjustment, liner positive bias straight tube and perforated baffle hybrid device 6 attract bulky grain, and depositing ions are carried out
Repel, reduce loss of the plasma in pipe in transmitting procedure, improve the efficiency of transmission of plasma and the deposition speed of film
Degree；Activity insulation is assembled together between liner positive bias straight tube and perforated baffle hybrid device 6 and multi-stage magnetic field device 4,
Liner positive bias straight tube and perforated baffle hybrid device 6 can be dismantled cleaning in time and installed with apparent surface pollution level, it is to avoid
The inside pipe wall pollution of multi-stage magnetic field device 4 and the problem of be difficult to clear up under linerless board status；Liner positive bias straight tube and porous
The length of straight pipe of baffle plate hybrid device 6HIt is identical with the length of multi-stage magnetic field device 4, the internal diameter of straight tubeDMore than arc ion plating
The external diameter in target source 3, external diameter is less than the internal diameter of multi-stage magnetic field device 4；In liner positive bias straight tube and perforated baffle hybrid device 6
Perforated baffle spacing be engaged with the length of magnetic field at different levels of multi-stage magnetic field device 4, straight tube and perforated baffle pass through bolt and nut
It is connected and fixed, perforated baffle can coordinate the internal diameter of straight tubeDDesign baffle plate size, baffle plate spacing and structure combination, gear
Plate is bolted and carries out position using nut and fixes, and is easy to disassemble the hole in assembling and cleaning pollutant, perforated baffle
The structure combination of footpath size, type and baffle plate at different levels is selected according to different targets and technological parameter；Liner positive bias straight tube
304 stainless steels of nonmagnetic, resistance to cleaning may be selected with the material of straight tube and perforated baffle in perforated baffle hybrid device 6
Material, straight tube needs to select suitable thickness according to length and rigidity, and perforated baffle is according to the size in aperture, type and baffle plate at different levels
Topology layout, according to actual design parameter process；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, DC voltage
Power supply, can produce continual and steady attraction to bulky grain defect in deposition process, greatly reduce bulky grain and pass through multistage magnetic
The probability of field device 4.
The need for film preparation, the related technological parameter of adjustment carries out simple metal film, the change of different element ratios
Compound ceramic membrane, function film and the high-quality thin-film preparation with nanometer multilayer or gradient-structure.
Advantages of the present invention：A. liner positive bias straight tube and perforated baffle hybrid device can be with by applying positive bias
Bulky grain is effectively attracted, depositing ions are repelled, loss of the plasma in pipe in transmitting procedure is reduced, enters
One step improves the efficiency of transmission of arc-plasma and the deposition velocity of film；B. multi-stage magnetic field filter can pass through magnetic
The line of force ensures the high efficiency of transmission of arc-plasma, changes the motion path of bulky grain defect to eliminate in arc-plasma
Bulky grain defect；C. liner positive bias straight tube and perforated baffle hybrid device can combine real by own form and structure
Existing mechanical stop screen effect, limits the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma；
D. it is adjusted by pulsed bias parameter, including amplitude, pulse width and frequency realize the tune to arc-plasma energy
Save and the bulky grain defect of residual is eliminated；E. the microstructure and properties of prepared film can pass through pulsed bias
Parameter is adjusted, and realizes that the pinning that energetic ion grows to film is imitated using the amplitude, pulse width and frequency of pulsed bias
Should, improve the texture and stress state of film growth, improve bond strength；F. prepared film avoids bulky grain
Defect, film crystal tissue is finer and close, can further improve the mechanical property of film.
The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating, can combine and use Traditional DC
Magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse
Compound biasing device carries out thin film deposition, thin to prepare simple metal film, the compound ceramic film of different element ratios, function
Film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Brief description of the drawings
Fig. 1 is the assembling letter of the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating of the present invention
Figure；Fig. 2 is the structure of liner positive bias straight tube and perforated baffle hybrid device and disassembles sketch；Fig. 3 is a kind of perforated baffle
Structure and 4 kinds of exemplary porous baffle plate sketches.
Embodiment
Embodiment one：Illustrate present embodiment, present embodiment multi-stage magnetic field with reference to Fig. 1, Fig. 2 and Fig. 3
The liner straight tube and perforated baffle hybrid device institute use device of arc ion plating include grid bias power supply 1, arc power 2, electric arc
Ion plating target source 3, multi-stage magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias straight tube and perforated baffle hybrid device 6,
Positively biased voltage source 7, sample stage 8, grid bias power supply kymographion 9 and vacuum chamber 10；
In the device：
Pending substrate work-piece is placed on the sample stage 8 in vacuum chamber 10, and liner positive bias straight tube and perforated baffle are compound
Insulation between type device 6 and vacuum chamber 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the negative pole output of grid bias power supply 1
End, arc ion plating target source 3 is arranged on vacuum chamber 10, connects the cathode output end of arc power 2, multi-stage magnetic field device 4 it is at different levels
Magnetic field connects each output end of multi-stage magnetic field power supply 5, and both positive and negative polarity connection can be determined according to output magnetic direction, and liner is just
Bias straight tube and perforated baffle hybrid device 6 connect the cathode output end of positively biased voltage source 7, open outside water-cooling circulating system；
Thin film deposition：Vacuumized in vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work gas is passed through
Body opens grid bias power supply 1 and grid bias power supply kymographion 9, and adjust the bias of the output of grid bias power supply 1 to 0.01Pa~10Pa
Amplitude, pulse frequency and pulse width, the peak voltage of the output pulse of grid bias power supply 1 is 0~1.2kV, and pulse frequency is 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, and regulation is needed
The technological parameter wanted, the current value that arc power 2 is exported is 10 ~ 300A, and multi-stage magnetic field device 4 is adjusted by multi-stage magnetic field power supply 5,
Keep arc-plasma to produce and carry out filtering elimination to bulky grain defect arc ion plating target source 3 is stable, electric arc etc. from
Daughter reaches matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of film, arc ions
Plating target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias straight tube and perforated baffle hybrid device 6 keep direct current positive bias, adjust
Whole output voltage, makes liner positive bias straight tube and perforated baffle hybrid device 6 attract bulky grain, depositing ions is entered
Row repels, and reduces loss of the plasma in pipe in transmitting procedure, improves the efficiency of transmission of plasma and the deposition of film
Speed；Activity insulation is assemblied in one between liner positive bias straight tube and perforated baffle hybrid device 6 and multi-stage magnetic field device 4
Rise, liner positive bias straight tube and perforated baffle hybrid device 6 can be dismantled cleaning in time and installed with apparent surface pollution level, be kept away
The problem of having exempted from the inside pipe wall pollution of multi-stage magnetic field device 4 under linerless board status and be difficult to clear up；Liner positive bias straight tube and many
The length of straight pipe of hole baffle plate hybrid device 6HIt is identical with the length of multi-stage magnetic field device 4, the internal diameter of straight tubeDMore than arc ions
The external diameter in target source 3 is plated, external diameter is less than the internal diameter of multi-stage magnetic field device 4；Liner positive bias straight tube and perforated baffle hybrid device 6
In perforated baffle spacing be engaged with the length of magnetic field at different levels of multi-stage magnetic field device 4, straight tube and perforated baffle pass through bolt spiral shell
Mother is connected and fixed, and perforated baffle can coordinate the internal diameter of straight tubeDBaffle plate size, baffle plate spacing and structure combination are designed,
Baffle plate is bolted and carries out position using nut and fixes, and is easy to disassemble in assembling and cleaning pollutant, perforated baffle
The structure combination of pore size, type and baffle plate at different levels is selected according to different targets and technological parameter；Liner positively biased straightening
304 stainless steels of nonmagnetic, resistance to cleaning may be selected in the material of straight tube and perforated baffle in pipe and perforated baffle hybrid device 6
Material, straight tube needs to select suitable thickness according to length and rigidity, and perforated baffle is according to the size in aperture, type and baffle plate at different levels
Topology layout, according to actual design parameter process；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is direct current
Pressure, can produce continual and steady attraction to bulky grain defect in deposition process, greatly reduce bulky grain and pass through multi-stage magnetic field
The probability of device 4.
The output waveform of grid bias power supply 1 is direct current, pulse, DC pulse is compound or multiple-pulse is compound.
Output direct current, pulse, the DC pulse of arc power 2 are combined or multiple-pulse is compound.
Arc ion plating target source 3 can be used single using high-melting-point or the simple metal or multicomponent alloy material of low melting point
Target, multiple targets or composition target, carry out simple metal film, the compound ceramic film of different element ratios, function film, polynary many
Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
Working gas selects argon gas, or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas, to prepare simple metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating, can be in liner positive bias straight tube
With in perforated baffle hybrid device using apply positive bias bulky grain is attracted, be prevented effectively from low melting material and produced
Raw bulky grain problem；Depositing ions are repelled simultaneously, reduction plasma is in hybrid device in transmitting procedure
Loss, improves the efficiency of transmission of plasma and the deposition velocity of film；Liner positive bias straight tube and the compound dress of perforated baffle
Put structure combination and the compound dress between internal diameter, the pore size of perforated baffle, Change of types and the baffle plate at different levels by straight tube
The structure combination put, it is possible to achieve the mechanical stop to bulky grain defect is shielded, reduces bulky grain and is reached by hybrid device
The probability on deposited samples surface；Liner positive bias straight tube and perforated baffle hybrid device, which can be realized, quickly to be removed and installed, and is kept away
The problem of having exempted from the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status；Apply back bias voltage on workpiece by adjusting
Parameter, is conducive to the interval Potential Distributing of plasma between improvement target base, fully attracts compound plasma to workpiece motion s,
Realize the fast deposition of film；Simultaneously also using arc ion plating (aip) generation it is stable continue, metal that ionization level is high etc. from
Daughter, is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound ceramic of different element ratios
Film, function film, multi-component multi-layer, superlattices and film or simple metal film with gradient-structure.
Embodiment two：The difference of present embodiment and embodiment one is that the device can also be realized separately
Outer function：Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and direct current can be combined
Bias, pulsed bias or DC pulse are combined biasing device and carry out thin film deposition, to prepare simple metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Embodiment three：The difference of present embodiment and embodiment two is, multi-stage magnetic field arc ions
Liner straight tube and perforated baffle the hybrid device connection of plating, arc power 2 are opened, and multi-stage magnetic field power supply 5 opens the multistage magnetic of regulation
Field device 4, positively biased voltage source 7 is opened, and liner positive bias straight tube and perforated baffle hybrid device 6 keep direct current positive bias, partially
Voltage source 1 is opened, technical arrangement plan, carries out thin film deposition, and preparing has different stress, microstructure and element ratio
Multilayer films, other are identical with embodiment two.
Embodiment four：The difference of present embodiment and embodiment one is, multi-stage magnetic field arc ions
Liner straight tube and perforated baffle the hybrid device connection of plating, arc power 2 are opened, and multi-stage magnetic field power supply 5 opens the multistage magnetic of regulation
Field device 4, positively biased voltage source 7 is opened, and liner positive bias straight tube and perforated baffle hybrid device 6 keep direct current positive bias, partially
Voltage source 1 is opened, technical arrangement plan, carries out thin film deposition, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, biography
System arc ion plating and pulsed cathode arc are combined biasing device progress film with Dc bias, pulsed bias or DC pulse and sunk
Product, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment two-phase
Together.
Can use 2 sets or the above arc ion plating target source 3, multi-stage magnetic field device 4 and liner positive bias straight tube and
The liner straight tube and perforated baffle hybrid device for the multi-stage magnetic field arc ion plating that perforated baffle hybrid device 6 is combined are carried out
Using various simple metal elements and multicomponent alloy material as the thin film deposition of target, and combine Traditional DC magnetron sputtering, pulsed magnetic
Control sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse are combined biasing device and entered
Row thin film deposition, prepares the multilayer films with different stress, microstructure and element ratio.
Claims (8)
1. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating, it is characterised in that the device includes
Grid bias power supply（1）, arc power（2）, arc ion plating target source（3）, multi-stage magnetic field device（4）, multi-stage magnetic field power supply（5）, liner
Positive bias straight tube and perforated baffle hybrid device（6）, positively biased voltage source（7）, sample stage（8）, grid bias power supply kymographion
（9）And vacuum chamber（10）, liner positive bias straight tube and perforated baffle hybrid device（6）With vacuum chamber（10）With multi-stage magnetic field dress
Put（4）Between insulate；Pending substrate work-piece is placed in vacuum chamber（10）Interior sample stage（8）On, workpiece and sample stage（8）Connect partially
Voltage source（1）Cathode output end, arc ion plating target source（3）Installed in vacuum chamber（10）On, connect arc power（2）Negative pole it is defeated
Go out end, multi-stage magnetic field device（4）Magnetic fields at different levels connect multi-stage magnetic field power supply（5）Each output end, both positive and negative polarity connection is according to defeated
Go out magnetic direction to be determined, liner positive bias straight tube and perforated baffle hybrid device（6）Connect positively biased voltage source（7）Positive pole
Output end, arc ion plating target source（3）With multi-stage magnetic field device（4）The temperature in the course of work is avoided to raise by water-cooling pattern
Problem.
2. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, liner positive bias straight tube and perforated baffle hybrid device（6）With multi-stage magnetic field device（4）Between activity insulation dress
With together, liner positive bias straight tube and perforated baffle hybrid device（6）Apparent surface pollution level is dismantled cleaning and pacified in time
Dress, it is to avoid multi-stage magnetic field device under linerless board status（4）Inside pipe wall pollution and the problem of be difficult to clear up；Liner positively biased straightening
Pipe and perforated baffle hybrid device（6）Length of straight pipeHWith multi-stage magnetic field device（4）Length it is identical, the internal diameter of straight tubeDGreatly
In arc ion plating target source（3）External diameter, external diameter be less than multi-stage magnetic field device（4）Internal diameter；Liner positive bias straight tube and porous
Baffle plate hybrid device（6）In perforated baffle spacing and multi-stage magnetic field device（4）Length of magnetic field at different levels be engaged, straight tube and
Perforated baffle is connected and fixed by bolt and nut, and perforated baffle coordinates the internal diameter of straight tubeDDesign between baffle plate size, baffle plate
Away from being combined with structure, baffle plate is bolted and carries out position using nut and fixes, and is easy to disassemble assembling and cleaning pollutant,
The structure combination of pore size, type and baffle plate at different levels in perforated baffle is selected according to different targets and technological parameter；
Liner positive bias straight tube and perforated baffle hybrid device（6）The material of middle straight tube and perforated baffle selects nonmagnetic, resistance to cleaning
304 stainless steel materials, straight tube needs to select suitable thickness according to length and rigidity, perforated baffle according to the size in aperture,
The topology layout of type and baffle plate at different levels, is processed according to actual design parameter.
3. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, in coating process, coordinates grid bias power supply（1）, arc power（2）, arc ion plating target source（3）, multi-stage magnetic field dress
Put（4）With multi-stage magnetic field power supply（5）Use, positively biased voltage source（7）Open, liner positive bias straight tube and the compound dress of perforated baffle
Put（6）Direct current positive bias is kept, using electric field inhibiting mechanism, negatively charged bulky grain is carried out effectively to attract to remove, to band
The depositing ions of positive charge repel, and improve the efficiency of transmission of exit plasma；Positively biased voltage source（7）Adjust output voltage,
Liner positive bias straight tube and perforated baffle hybrid device（6）Bulky grain is attracted, depositing ions are repelled, is reduced
Loss of the plasma in hybrid device transmitting procedure, improves the efficiency of transmission of plasma and the deposition velocity of film；
Positively biased voltage source（7）Voltage be 0 ~+200V, DC voltage power supply, in deposition process to bulky grain defect produce continue
Stable attraction, greatly reduces bulky grain and passes through multi-stage magnetic field device（4）Reach the probability of film surface.
4. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, institute's use device also includes grid bias power supply kymographion（9）, show grid bias power supply（1）The pulse voltage sent
And current waveform, by adjusting grid bias power supply（1）Output waveform, to the liner straight tube from multi-stage magnetic field arc ion plating and many
The plated film ion transmitted in the baffle plate hybrid device of hole is effectively attracted, and carries out deposition and the control of sample surfaces film
The ratio of deposition targets element in the film, realizes that the regulation of plasma energy and the bulky grain defect of residual carry out electric field
Repel and remove.
5. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, grid bias power supply（1）Output pulse is pulse, DC pulse is compound or multiple-pulse is compound.
6. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
Be characterised by, the device with it is single cover or many set combinations come prepare simple metal film, different element ratios compound ceramic it is thin
Film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
7. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, the device is combined using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode
Arc is combined biasing device with Dc bias, pulsed bias or DC pulse and carries out thin film deposition, to prepare simple metal film, difference
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure of element ratio.
8. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its
It is characterised by, working gas selects argon gas, or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas, to prepare simple metal film, the compound ceramic film of different element ratio, function film and many with nanometer
The high-quality thin-film of layer or gradient-structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720092262.4U CN206616266U (en) | 2017-01-22 | 2017-01-22 | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720092262.4U CN206616266U (en) | 2017-01-22 | 2017-01-22 | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating |
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| Publication Number | Publication Date |
|---|---|
| CN206616266U true CN206616266U (en) | 2017-11-07 |
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| CN201720092262.4U Active CN206616266U (en) | 2017-01-22 | 2017-01-22 | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109402564A (en) * | 2018-11-14 | 2019-03-01 | 天津职业技术师范大学 | A kind of AlCrSiN and AlCrSiON double-layer nanometer composite coating and preparation method thereof |
| CN109989039A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle |
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2017
- 2017-01-22 CN CN201720092262.4U patent/CN206616266U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989039A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle |
| CN109402564A (en) * | 2018-11-14 | 2019-03-01 | 天津职业技术师范大学 | A kind of AlCrSiN and AlCrSiON double-layer nanometer composite coating and preparation method thereof |
| CN109402564B (en) * | 2018-11-14 | 2020-07-24 | 天津职业技术师范大学 | AlCrSiN and AlCrSiON double-layer nano composite coating and preparation method thereof |
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| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180424 Address after: 450015 Henan Province, Zhengzhou District, No. 27 University Road, No. 2 Patentee after: Zhengzhou Institute of Aeronautical Industry Management Address before: 450015 Zheng Hang 26, building 26, building 2, University Road, 27 District, Zhengzhou, Henan. Patentee before: Wei Yongqiang |