CN206553622U - The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating - Google Patents
The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating Download PDFInfo
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- CN206553622U CN206553622U CN201720089267.1U CN201720089267U CN206553622U CN 206553622 U CN206553622 U CN 206553622U CN 201720089267 U CN201720089267 U CN 201720089267U CN 206553622 U CN206553622 U CN 206553622U
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- 238000007733 ion plating Methods 0.000 title claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 66
- 230000007547 defect Effects 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 230000008676 import Effects 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000011538 cleaning material Substances 0.000 claims 1
- 239000008246 gaseous mixture Substances 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 23
- 238000010891 electric arc Methods 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010921 in-depth analysis Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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Abstract
The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating, belongs to technical field of material surface treatment, and the utility model is to solve the problems, such as the loss during bulky grain pollutes to inside pipe wall in multi-stage magnetic field filter cleaning and Plasma Transport.Device of the present utility model includes：Grid bias power supply, arc power, arc ion plating target source, multi-stage magnetic field device, multi-stage magnetic field power supply, liner positive bias taper pipe device, positively biased voltage source, sample stage, grid bias power supply kymographion and vacuum chamber；Thin film deposition：Attachment means, activation system treats that the vacuum in vacuum chamber is less than 10‑4During Pa, it is passed through working gas, open plated film power supply, the energy of arc-plasma is adjusted by grid bias power supply simultaneously, the bulky grain defect in arc-plasma is eliminated by liner positive bias taper pipe device and multi-stage magnetic field device and efficiency of transmission of the arc-plasma in multi-stage magnetic field filter is improved, technological parameter needed for setting, carries out film preparation.
Description
Technical field
The present invention relates to the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating, belong to material surface processing skill
Art field.
Background technology
During arc ion plating prepares film, because arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, in the presence of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " in the film（Macroparticles）Defect（Boxman
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.）.
In arc-plasma, big is reached because the movement velocity of electronics was far longer than in the movement velocity of ion, unit interval
The electron number on grain surface is more than number of ions, makes bulky grain that elecrtonegativity is presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size in 0.1-10 microns of bulky grain defect just as PM2.5 is to the pollution of air quality, quality and property to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method, seriously constrains its answering in thin-film material of new generation preparation
With.
At present, it is also easy to produce greatly in the simple metal using low melting point or multicomponent alloy material to solve arc ions electroplating method
Grain defect problem, the method for using Magnetic filter main at present filters out bulky grain, and such as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device（Publication number：CN1150180, publication date：On May 21st, 1997）It is middle to use 90 °
Magnetic filter is filtered to the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan etc. of He'nan University (such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei filtered cathode arc plasmas prepare TiAlN thin film
Influence China YouSe Acta Metallurgica Sinica 2004,14 (8) of the middle sedimentary condition to film texture:1264-1268.) in article
Middle " S " magnetic filter that made is filtered to the bulky grain of cathode arc, also American scholar Anders et al.（Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
arc plasmas [J]. Surf Coat Tech, 2000, 133-134: 96-100.）The Twist filter's of proposition
Magnetic filter, although these methods have certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission of plasma is damaged
Lose seriously, substantially reduce ion current density.Based on that can filter on the basis of bulky grain can guarantee that efficiency again, Chinese patent is true
Empty cathode arc straight filter (publication number：CN1632905, publication date：On June 29th, 2005) the middle side for proposing straight tube filtering
Method, but which in turn reduces filter effect.In a word, related researcher is by contrasting various Magnetic filter methods（Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J] Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007, 35(4): 992-999.）It was found that arc ion plating plasma after magnetic filter by keeping
High efficiency of transmission and elimination bulky grain is very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.
In addition using the electric field suppressing method biased on matrix, when applying back bias voltage on matrix, electric field will be to electronegative big
Grain produces repulsive interaction, and then reduces the generation of film surface bulky grain defect.German scholar Olbrich et al.（Olbrich
W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991, 49(1-3):258-262. with Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
using a pulsed bias voltage [J]. Mat Sci Eng A, 1991, 140: 830-837.）Using pulse
Bias to replace traditional Dc bias, form a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology, not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
It is high, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al.（Woods Guoqiang pulsed bias arc ion platings
Process ba- sis research [D] Dalian University of Technology, 2008. and Huang Meidong, woods Guoqiang, Dong Chuan, Sun Chao hear immediately inclined
Press Influencing Mechanism [J] Acta Metallurgica Sinicas to arc ion plating film surface appearance, 2003,39 (5): 510-515.）Pin
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis to pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, reduce film surface big
Grain defect counts, improve the quality of film, are widely used in actual production, but bulky grain can not be still completely eliminated and lacks
Fall into.Domestic scholars（Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, literary Zhenhua, Chen Liang thoroughbred horse multi-stage magnetic field straight tube Magnetic filters and pulse
The compound arc ions electroplating method of bias, publication number：CN103276362A, publication date：On September 4th, 2013）Propose many
The arc ions electroplating method that level magnetic field straight tube Magnetic filter is combined with pulsed bias, big is eliminated by multi-stage magnetic field filter
Grain defect and the efficiency of transmission for lifting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later stage correlation scholar（Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
Accord with the multi-stage magnetic field arc ions electroplating method of pallid light liner positive bias straight tubes, publication number：CN105925940A, publication date：
On September 7th, 2016）The multi-stage magnetic field arc ions electroplating method of liner positive bias straight tube is proposed to solve the pollution to inside pipe wall
Problem.Also scholar（The cathodic arc plasma source and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filters
Prepare the Chinese Surface Engineering of [J], 2002,02): 11-15+20-12.）The method for using for reference Bilek plates（Bilek M M M,
Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a
filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges
and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth
International Symposium on, 1996: 962-966 vol.2）, on the bend pipe of 90 degree of bend pipe magnetic filters
Apply positive bias to improve the efficiency of transmission of plasma.
The content of the invention
The invention aims to the simple metal or multicomponent alloy of low melting point are used for solution conventional arc ion electroplating method
Material and nonmetallic materials（Such as graphite）Bulky grain defect, flexure type Magnetic filter technology, which are also easy to produce, as target causes electric arc etc.
The low problem of gas ions efficiency of transmission, with reference to multi-stage magnetic field filter method and conical pipe own form mechanical stop shielding and just
The compound action that biasing electric field attracts eliminates the bulky grain defect contained in arc-plasma, while ensureing arc-plasma
With higher efficiency of transmission by conical pipe and multi-stage magnetic field filter, make workpiece surface can be with the situation for applying back bias voltage
Continuously, it is fine and close to prepare high-quality thin-film, at the same realize to constituent content addition control in film, reduction using alloys target production
Cost, the deposition efficiency for improving film and reduction bulky grain defect are to film growth and the adverse effect of performance, it is proposed that multistage
The liner positive bias taper pipe device of magnetic field arc ion plating.
Device used in the present invention includes grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device
4th, multi-stage magnetic field power supply 5, liner positive bias taper pipe device 6, positively biased voltage source 7, sample stage 8, grid bias power supply kymographion 9
With vacuum chamber 10；
In the device：
Pending substrate work-piece is placed on the sample stage 8 in vacuum chamber 10, liner positive bias taper pipe device 6 and vacuum chamber
Insulation between 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, arc ion plating target source
3 are arranged on vacuum chamber 10, connect the cathode output end of arc power 2, the magnetic fields at different levels of multi-stage magnetic field device 4 connect multi-stage magnetic field power supply
5 each output end, both positive and negative polarity connection can be determined according to output magnetic direction, and liner positive bias taper pipe device 6 connects
The cathode output end of positively biased voltage source 7, opens outside water-cooling circulating system；
Thin film deposition：Vacuumized in vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work gas is passed through
Body to 0.01Pa~10Pa, grid bias power supply 1 and grid bias power supply kymographion 9 is opened, the bias amplitude that grid bias power supply 1 is exported,
Pulse frequency and pulse width modulation, the peak voltage of the output pulse of grid bias power supply 1 is 0~1.2kV, and pulse frequency is 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, and regulation is needed
The technological parameter wanted, the current value that arc power 2 is exported is 10 ~ 300A, and multi-stage magnetic field device 4 is adjusted by multi-stage magnetic field power supply 5,
Arc-plasma is kept in the stable generation in arc ion plating target source 3 and filtering elimination is carried out to bulky grain defect, makes electric arc etc.
Gas ions with higher efficiency of transmission by multi-stage magnetic field device 4 reach matrix surface, carry out film fast deposition, electric arc from
Son plating target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias taper pipe device 6 keeps direct current positive bias, output voltage adjustment, liner
Positive bias taper pipe device 6 attracts bulky grain, and depositing ions are repelled, and reduces plasma and is transmitted across in pipe
Loss in journey, improves the efficiency of transmission of plasma and the deposition velocity of film；Liner positive bias taper pipe device 6 can match somebody with somebody
Multi-stage magnetic field device 4 is closed to design the structure of 1 grade of conical pipe, 2 grades of conical pipes, 3 grades of conical pipes or 4 grades of conical pipes and import and export cloth
It is connected between office, every grade of conical pipe by bolt and nut, is easy to disassemble assembling and cleaning pollutant；Liner positive bias taper
Pipe device 6 can be removed and installed quickly, it is to avoid the inside pipe wall pollution cleaning of multi-stage magnetic field device 4 asks under linerless board status
Topic；The internal diameter of liner positive bias taper pipe device 6D EnterMore than the external diameter in arc ion plating target source 3, liner positive bias conical pipe dress
The external diameter for putting 6 is less than the internal diameter of multi-stage magnetic field device 4, and 304 stainless steel materials of nonmagnetic, resistance to cleaning may be selected in material, can root
Need to select suitable thickness according to taper length of tube and rigidity, processed according to actual design parameter；The electricity of positively biased voltage source 7
Pressure parameter is 0 ~+200V, and DC voltage power supply can produce continual and steady suction in deposition process to bulky grain defect
Draw, greatly reduce probability of the bulky grain by multi-stage magnetic field device 4.
The need for film preparation, the related technological parameter of adjustment carries out simple metal film, the change of different element ratios
Compound ceramic membrane, function film and the high-quality thin-film preparation with nanometer multilayer or gradient-structure.
Advantages of the present invention：A. liner positive bias taper pipe device can have by applying positive bias to bulky grain
Effect attracts, and depositing ions are repelled, and reduces loss of the plasma in pipe in transmitting procedure, further improves electric arc etc.
The efficiency of transmission of gas ions and the deposition velocity of film；B. multi-stage magnetic field filter can ensure electric arc etc. by the magnetic line of force
The high efficiency of transmission of gas ions, changes the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma；c.
Liner positive bias taper pipe device can realize mechanical stop screen effect by own form, limit the motion of bulky grain defect
Path eliminates the bulky grain defect in arc-plasma；D. it is adjusted by pulsed bias parameter, including amplitude, arteries and veins
Rush width and frequency realizes that the regulation to arc-plasma energy and the bulky grain defect to residual are eliminated；E. it is made
The microstructure and properties of standby film can be adjusted by pulsed bias parameter, wide using the amplitude of pulsed bias, pulse
Degree and frequency realize the pinning effect that energetic ion grows to film, improve the texture and stress state of film growth, carry
High bond strength；F. prepared film avoids bulky grain defect, and film crystal tissue is finer and close, can further carry
The mechanical property of high film.
The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating, can combine and be splashed using Traditional DC magnetic control
Penetrate, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse it is compound inclined
Pressure device carries out thin film deposition, to prepare compound ceramic film, function film and the tool of simple metal film, different element ratios
There is the high-quality thin-film of nanometer multilayer or gradient-structure.
Brief description of the drawings
Fig. 1 is the scheme of erection of the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating of the present invention；Fig. 2 is interior
Serve as a contrast 4 kinds of typical structure sketches of positive bias taper pipe device.
Embodiment
Embodiment one：Illustrate present embodiment with reference to Fig. 1 and 2, present embodiment multi-stage magnetic field electric arc from
The liner positive bias taper pipe device institute use device of son plating includes grid bias power supply 1, arc power 2, arc ion plating target source 3, many
Level magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias taper pipe device 6, positively biased voltage source 7, sample stage 8, grid bias power supply
Kymographion 9 and vacuum chamber 10；
In the device：
Pending substrate work-piece is placed on the sample stage 8 in vacuum chamber 10, liner positive bias taper pipe device 6 and vacuum chamber
Insulation between 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, arc ion plating target source
3 are arranged on vacuum chamber 10, connect the cathode output end of arc power 2, the magnetic fields at different levels of multi-stage magnetic field device 4 connect multi-stage magnetic field power supply
5 each output end, both positive and negative polarity connection can be determined according to output magnetic direction, and liner positive bias taper pipe device 6 connects
The cathode output end of positively biased voltage source 7, opens outside water-cooling circulating system；
Thin film deposition：Vacuumized in vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work gas is passed through
Body opens grid bias power supply 1 and grid bias power supply kymographion 9, and adjust the bias of the output of grid bias power supply 1 to 0.01Pa~10Pa
Amplitude, pulse frequency and pulse width, the peak voltage of the output pulse of grid bias power supply 1 is 0~1.2kV, and pulse frequency is 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, and regulation is needed
The technological parameter wanted, the current value that arc power 2 is exported is 10 ~ 300A, and multi-stage magnetic field device 4 is adjusted by multi-stage magnetic field power supply 5,
Keep arc-plasma to produce and carry out filtering elimination to bulky grain defect arc ion plating target source 3 is stable, electric arc etc. from
Daughter reaches matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of film, arc ions
Plating target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias taper pipe device 6 keeps direct current positive bias, adjusts output voltage, is made interior
Lining positive bias taper pipe device 6 attracts bulky grain, and depositing ions are repelled, and reduces plasma and is transmitted in pipe
During loss, improve plasma efficiency of transmission and film deposition velocity；Liner positive bias taper pipe device 6 can be with
Multi-stage magnetic field device 4 is coordinated to design structure and the import and export of 1 grade of conical pipe, 2 grades of conical pipes, 3 grades of conical pipes or 4 grades of conical pipes
It is connected between layout, every grade of conical pipe by bolt and nut, is easy to disassemble assembling and cleaning pollutant；Liner positive bias is bored
Shape pipe device 6 can be realized quickly removes and installs, it is to avoid the inside pipe wall pollution cleaning of multi-stage magnetic field device 4 under linerless board status
The problem of；Internal diameter at the right side import of liner positive bias taper pipe device 6D EnterMore than the external diameter in arc ion plating target source 3, liner
The external diameter on the right side of positive bias taper pipe device 6 is less than the internal diameter of multi-stage magnetic field device 4, the left side of liner positive bias taper pipe device 6
The internal diameter in exitD Go outSelected, become by the internal diameter ratio at import and exit according to different targets and technological parameter
Change, it is possible to achieve the mechanical stop to bulky grain is shielded；The material of liner positive bias taper pipe device 6 may be selected nonmagnetic, resistance to
304 stainless steel materials of cleaning, can need to select suitable thickness, according to actual design parameter according to taper length of tube and rigidity
Processing；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is DC voltage, can be to bulky grain in deposition process
Defect produces continual and steady attraction, greatly reduces probability of the bulky grain by multi-stage magnetic field device 4.
The output waveform of grid bias power supply 1 is direct current, pulse, DC pulse is compound or multiple-pulse is compound.
Output direct current, pulse, the DC pulse of arc power 2 are combined or multiple-pulse is compound.
Arc ion plating target source 3 can be used single using high-melting-point or the simple metal or multicomponent alloy material of low melting point
Target, multiple targets or composition target, carry out simple metal film, the compound ceramic film of different element ratios, function film, polynary many
Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
Working gas selects argon gas, or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas, to prepare simple metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating, can utilize application in taper pipe device
Positive bias attracts bulky grain, is prevented effectively from the bulky grain problem produced by low melting material；Depositing ions are entered simultaneously
Row repels, and reduces loss of the plasma in pipe in transmitting procedure, improves the efficiency of transmission of plasma and the deposition of film
Speed；The internal diameter that liner positive bias taper pipe device passes through exitD Go outRegulation, it is possible to achieve hinder the machinery of bulky grain defect
Baffle plate covers, and reduces the probability that bulky grain reaches deposited samples surface by exit；Liner positive bias taper pipe device can be real
Now quickly remove and install, it is to avoid under linerless board status the problem of the inside pipe wall pollution cleaning of multi-stage magnetic field device；Pass through adjustment
Apply back bias voltage parameter on workpiece, be conducive to the interval Potential Distributing of plasma between improvement target base, fully attract compound
Plasma realizes the fast deposition of film to workpiece motion s；Also continued simultaneously using the generation stabilization of arc ion plating (aip),
The high metallic plasma of ionization level, is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares different members
The compound ceramic film of plain ratio, function film, multi-component multi-layer, superlattices and film or simple metal with gradient-structure are thin
Film.
Embodiment two：The difference of present embodiment and embodiment one is that the device can also be realized separately
Outer function：Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and direct current can be combined
Bias, pulsed bias or DC pulse are combined biasing device and carry out thin film deposition, to prepare simple metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Embodiment three：The difference of present embodiment and embodiment two is, multi-stage magnetic field arc ions
The liner positive bias taper pipe device connection of plating, arc power 2 is opened, and multi-stage magnetic field power supply 5 opens regulation multi-stage magnetic field device 4,
Positively biased voltage source 7 is opened, and liner positive bias taper pipe device 6 keeps direct current positive bias, and grid bias power supply 1 is opened, and technological parameter is adjusted
It is whole, carry out thin film deposition, prepare with different stress, microstructure and element ratio multilayer films, other with
Embodiment two is identical.
Embodiment four：The difference of present embodiment and embodiment one is, multi-stage magnetic field arc ions
The liner positive bias taper pipe device connection of plating, arc power 2 is opened, and multi-stage magnetic field power supply 5 opens regulation multi-stage magnetic field device 4,
Positively biased voltage source 7 is opened, and liner positive bias taper pipe device 6 keeps direct current positive bias, and grid bias power supply 1 is opened, and technological parameter is adjusted
It is whole, thin film deposition is carried out, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode
Arc and Dc bias, pulsed bias or DC pulse are combined biasing device and carry out thin film deposition, prepare with different stress,
The multilayer films of microstructure and element ratio, other are identical with embodiment two.
Arc ion plating target source 3, multi-stage magnetic field device 4 and the liner positive bias conical pipe of 2 sets or the above can be used
The liner positive bias taper pipe device for the multi-stage magnetic field arc ion plating that device 6 is combined is carried out with various simple metal elements and polynary
Alloy material is the thin film deposition of target, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and
Pulsed cathode arc is combined biasing device with Dc bias, pulsed bias or DC pulse and carries out thin film deposition, and preparing has difference
The multilayer films of stress state, microstructure and element ratio.
Claims (8)
1. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating, it is characterised in that the device includes grid bias power supply
1st, arc power 2, arc ion plating target source 3, multi-stage magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias taper pipe device 6,
Positively biased voltage source 7, sample stage 8, grid bias power supply kymographion 9 and vacuum chamber 10, liner positive bias taper pipe device 6 and vacuum
Insulated between room 10 and multi-stage magnetic field device 4；Pending substrate work-piece is placed on the sample stage 8 in vacuum chamber 10, workpiece and sample
Sample platform 8 connects the cathode output end of grid bias power supply 1, and arc ion plating target source 3 is arranged on vacuum chamber 10, connects the negative pole of arc power 2
Output end, the magnetic fields at different levels of multi-stage magnetic field device 4 connect each output end of multi-stage magnetic field power supply 5, and both positive and negative polarity connection is according to output
Magnetic direction is determined, and liner positive bias taper pipe device 6 connects the cathode output end of positively biased voltage source 7, arc ion plating target
Source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern.
2. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
Activity insulation connection between liner positive bias taper pipe device 6 and multi-stage magnetic field device 4, liner positive bias taper pipe device 6 is regarded
Surface pollution degree is dismantled cleaning and installed in time, it is to avoid under linerless board status the inside pipe wall pollution of multi-stage magnetic field device 4 and
The problem of being difficult to clear up；The length of liner positive bias taper pipe device 6HIt is identical with the length of multi-stage magnetic field device 4, liner positively biased
Press the internal diameter at the right side import of taper pipe device 6D EnterMore than the external diameter in arc ion plating target source 3, liner positive bias taper pipe device
The external diameter on 6 right sides is less than the internal diameter at the internal diameter of multi-stage magnetic field device 4, the left side outlet of liner positive bias taper pipe device 6D Go outRoot
Selected according to different targets and technological parameter, changed by the internal diameter at import and exit, realize the machinery to bulky grain
Stop shielding；Liner positive bias taper pipe device 6 coordinates multi-stage magnetic field device 4 to design 1 grade of conical pipe, 2 grades of conical pipes, 3 grades of cones
The structure of shape pipe or 4 grades of conical pipes and import and export are laid out, and are connected between every grade of conical pipe by bolt and nut, are easy to tear open
De-assembly and cleaning pollutant；The material of liner positive bias taper pipe device 6 selects 304 stainless steels of nonmagnetic, resistance to cleaning
Material, needs to select suitable thickness according to taper length of tube and rigidity, is processed according to actual design parameter.
3. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
In coating process, coordinate grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device 4 and multi-stage magnetic field electricity
Source 5 is used, and positively biased voltage source 7 is opened, and liner positive bias taper pipe device 6 keeps direct current positive bias, using electric field inhibiting mechanism,
Negatively charged bulky grain is carried out effectively to attract to remove, positively charged depositing ions are repelled, exit plasma is improved
The efficiency of transmission of body；Positively biased voltage source 7 adjusts output voltage, and liner positive bias taper pipe device 6 attracts bulky grain, right
Depositing ions are repelled, and reduce loss of the plasma in conical pipe in transmitting procedure, improve the transmission effect of plasma
The deposition velocity of rate and film；The voltage of positively biased voltage source 7 is 0 ~+200V, DC voltage power supply, to big in deposition process
Grain defect produces continual and steady attraction, greatly reduces the probability that bulky grain reaches film surface by multi-stage magnetic field device 4.
4. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
Institute's use device also includes grid bias power supply kymographion 9, pulse voltage and current waveform that display grid bias power supply 1 is sent, leads to
The output waveform of adjustment grid bias power supply 1 is crossed, to being transmitted from the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating
The plated film ion come over is effectively attracted, and carries out the deposition and control deposition targets element of sample surfaces film in the film
Ratio, realizes that the regulation of plasma energy and the bulky grain defect of residual carry out electric field repulsion removing.
5. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
The output pulse of grid bias power supply 1 is pulse, DC pulse is compound or multiple-pulse is compound.
6. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
It is thin that the device prepares simple metal film, the compound ceramic film of different element ratios, function with single set or many set combinations
Film and the high-quality thin-film with nanometer multilayer or gradient-structure.
7. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
The device is combined using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and direct current
Bias, pulsed bias or DC pulse are combined biasing device and carry out thin film deposition, to prepare simple metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
8. the liner positive bias taper pipe device of multi-stage magnetic field arc ion plating according to claim 1, it is characterised in that
Working gas selects argon gas, or working gas to select gaseous mixtures one or more in nitrogen, acetylene, methane, silane or oxygen
Body, to prepare simple metal film, the compound ceramic film of different element ratio, function film and with nanometer multilayer or gradient
The high-quality thin-film of structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720089267.1U CN206553622U (en) | 2017-01-22 | 2017-01-22 | The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720089267.1U CN206553622U (en) | 2017-01-22 | 2017-01-22 | The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating |
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| CN206553622U true CN206553622U (en) | 2017-10-13 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989007A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner bias conical pipe composite filter |
| CN109989022A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner conical pipe and straight tube composite filter |
| CN109989029A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration |
| EP3587618A3 (en) * | 2018-06-05 | 2020-03-11 | United Technologies Corporation | Selective vapor deposition process for additive manufacturing |
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2017
- 2017-01-22 CN CN201720089267.1U patent/CN206553622U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989007A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner bias conical pipe composite filter |
| CN109989022A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner conical pipe and straight tube composite filter |
| CN109989029A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of combination field and liner bias conical pipe and ladder pipe combined filtration |
| EP3587618A3 (en) * | 2018-06-05 | 2020-03-11 | United Technologies Corporation | Selective vapor deposition process for additive manufacturing |
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