CN215593176U

CN215593176U - Arc ion plating and twin target high-power pulse magnetron sputtering device with movable magnetic field

Info

Publication number: CN215593176U
Application number: CN201822241019.1U
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 张华阳; 侯军兴; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2018-12-28
Publication date: 2022-01-21
Anticipated expiration: 2028-12-28

Abstract

The invention discloses an arc ion plating and twin target high-power pulse magnetron sputtering device with a movable magnetic field, belongs to the technical field of surfaces, and aims to solve the problems of pollution of large particles to a film, use limitation of a target material, loss of arc plasma in the transmission process of a magnetic filter device, unstable discharge of high-power pulse magnetron sputtering and the like in arc ion plating. The apparatus of the present invention comprises: bias power supply, arc ion plating target source and power supply, movable coil device and power supply, and waveform matchingThe device, the twin target high-power pulse magnetron sputtering target source, the power supply, the oscilloscope and the vacuum chamber are matched; and (3) thin film deposition: connecting device, starting system, vacuum degree in the vacuum chamber is less than 10^‑4And when Pa is needed, introducing working gas, starting a film coating power supply, adjusting the energy of the arc plasma by using a bias power supply, eliminating the large particle defect and guiding a transmission path of the composite plasma through a movable coil device, reducing the loss in the vacuum chamber, setting process parameters, and preparing the film.

Description

Arc ion plating and twin target high-power pulse magnetron sputtering device with movable magnetic field

Technical Field

The invention relates to an arc ion plating and twin target high-power pulse magnetron sputtering device with a movable magnetic field, belonging to the technical field of material surface treatment.

Background

In the process of preparing the film by arc ion plating, the current density of arc spots is as high as 2.5-5 multiplied by 10¹⁰A/m²The molten liquid metal, which is caused to appear at the location of the arc spot on the target surface, is sprayed out in the form of droplets under the action of the local plasma pressure, adheres to the surface of the film or is embedded in the film to form "large particle" (Macroparticles) defects (Boxman R L, gold limit s. Macroparticle contact in lateral coatings: generation, transport and control J]Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, the number of electrons reaching the surface of a large particle per unit time is larger than that of ions because the moving speed of electrons is much larger than that of ions, so that the large particle is negatively charged. With respect to films of micron or submicron thickness, large particle defects of 0.1-10 microns in size, as well as PM2.5, can be a serious detriment to the quality and performance of the film. With a film material andthe film technology is increasingly widely applied, and whether the problem of large particle defect is solved or not becomes the bottleneck of further development of the arc ion plating method, thereby seriously restricting the application of the arc ion plating method in the preparation of new-generation film materials.

The magnetron sputtering technology adopts a direct current power supply mode at first, compared with an arc ion plating method, the magnetron sputtering technology has no large particle defects, can realize low-temperature sputtering deposition of various materials, but has very low ionization rate of sputtering materials, and the power density of a sputtering target is 50W/cm²The film deposition cannot obtain enough ion number, so that the deposition efficiency is very low, the target poisoning phenomenon is easy to generate, and the energy of the ions is low, so that the film tissue is not compact enough (Changshai, hysteresis effect research in the reactive magnetron sputtering process [ J]Vacuum and low temperature, 2003, 9(4): 7-10.). In 1999, V. Kouznetsov et al, university of forest-Xuezhei, Sweden (Kouznetsov V, Mac a k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetic neutron monitoring devices high target power dynamics [ J]Surf Coat Tech, 1999, 122(2-3): 290-. Compared with the common direct current magnetron sputtering, the peak power of the magnetron sputtering is improved by 100 times and is about 1000-3000W/cm²Density of plasma up to 10¹⁸m^-3The ion density of the central area of the target can reach 10¹⁹m^-3And the ionization rate of the sputtering material can reach more than 90 percent at the same time, and the sputtering material does not contain large particle defects in the existing arc ion plating method with the highest ionization rate. After 2008, research on high-power pulse magnetron sputtering technology (Lixiph. high-power composite pulse magnetron sputtering plasma characteristics and TiN film preparation [ D ] was also started in various colleges and universities in China]Development and study of high-power pulsed magnetron sputtering technique [ J ] of Wuzhong, Zhutao, Chunchui, Tiankuibo, Yangshijing, Lixiping, Haerbin university of industry 2008]Vacuum, 2009, 46(3): 18-22. and muzong, wang chun, jali, dong rushing. DC power source coupling high power pulse non-flatConstant magnetron sputtering ionization characteristic [ J]The Proc of Physics 2011, 60(1): 422-. Although there are also scholars who improve the application of high power pulse magnetron sputtering, such as the ion implantation and deposition method (publication No. CN101838795A, published date: 9/2010 and 22 days) of the chinese patent, which fully utilizes the advantages of high power pulse magnetron sputtering by using a high voltage and pulse synchronization matching device to realize the breakthrough of the high power pulse magnetron sputtering technology in the field of ion implantation, due to the limitation of a high voltage power supply, the density of deposited ions reaching the surface of a substrate cannot be too high, otherwise the high voltage power supply is damaged, and the grape dental university Ferreira et al (Ferreira F, Serra R, Oliveira J C, caveiro a, Effect of peak target power on the performance of Cr thin ms sputtered by HiPIMS in depletion semiconductors (DOMS) model [ J]Surf Coat Tech, 2014, 258: 249-. The twin target medium frequency magnetron sputtering technology obtains alternating voltages with opposite phases on double targets through an alternating current power supply, and the alternating voltages are alternately formed into an anode and a cathode, so that the stability of magnetron sputtering discharge operation can be greatly improved, the problem that the target surface is ignited or the anode disappears due to charge accumulation generated by target poisoning on the target surface can be avoided, the target sputtering rate is high, and the method is one of the first-choice deposition methods (Li fen, Zhu Ying, Li Liu He, Lu Yuan, Zhu Jian Hao. magnetron sputtering technology and development thereof [ J]Vacuum electronics, 2011, (3): 49-54.).

At present, in order to solve the problem that the arc ion plating method is prone to generate large grain defects when using pure metal or multi-element alloy materials with low melting points, magnetic filtration is mainly adopted to filter out large grains, such as the ceramic material prepared by the Plasma immersion ion implantation device (publication number: CN1150180, published date: 1997 5, 21) in Chinese patent, and the ceramic material prepared by the method is mainly prepared by filtering large grains of pulsed cathode arc by using a 90-degree magnetic filtration bent pipe, American scholars et al (Anders S, Anders A, Dickinson M R, Macgill R A, Brown I G. S-shaped magnetic macroparametric filter for catalytic deposition [ J ]. IEEE Trans Plasma Sci, 1997, 25(4): 670-674.) and Zhan-Nannan university (Zhang Jane Jue, Wu-Shi et al. magnetic filtration Plasma Weiwei et al. the influence of deposition conditions on the non-ferrous metal texture film in Zhan Yu Ju, Zhang Weiwei et al. magnetic filtration Plasma preparation film, 1264- & 1268.) in the article, "S" magnetic filter elbows were made to filter large particles of cathode arcs, and magnetic filtration of Twist filters proposed by American scholars et al (Anders A, MacGill R A. Twist filters for the removal of macro particles from the cathode plasma [ J ]. Surf Coat Tech, 2000, 133- & 134: 96-100.), and Dehua at Shanghai traffic university proposed adjustable open single-and dual-channel electromagnetic coil filters (D; Shanghai traffic university, 2009), which, although effective in filtering and eliminating large particles, have a significant loss in plasma transport efficiency and greatly reduced ion flux density. On the basis of filtering large particles and guaranteeing the efficiency, a straight tube filtering method is proposed in a vacuum cathode arc straight tube filter (publication number: CN1632905, published: 6/29/2005) in China patent, but the filtering effect is reduced. In summary, relevant researchers found by comparing various magnetic filtration methods (Anders A. Applicheches to red catalytic array of macro-and nanoparticles: a Review [ J ]. Surf Coat Tech, 1999, 120-. In addition, a bias electric field suppression method is adopted on the substrate, and when negative bias is applied on the substrate, the electric field can generate repulsion action on negatively charged large particles, so that the generation of large particle defects on the surface of the thin film is reduced. Olbrich et al (Olbrich W, Fessmann J, Kampschult G, Ebberenk J. Improved control of TiN coating properties using a pulsed bias with a pulsed bias [ J ]. Surf COAT Tech, 1991, 49(1-3): 258) 262. and Fessmann J, Olbrich W, Kampschult G, Ebberenk J. capacitive deposition of TiN and Zr (C, N) at low substrate pulsed bias [ J ]. Mat Sci Eng A, 1991, 140: 830.) use of pulsed bias instead of conventional DC bias to form a new technology of pulsed bias ion plating, which not only greatly reduces the surface temperature of large particles but also overcomes the high temperature of the substrate, the internal stress of the film is large, and the like. The theory of influence of bias voltage on the surface morphology of an arc ion plating film [ J ]. Metallurgical Proc, 2003, 39(5): 510) is deeply analyzed aiming at the mechanism of large particle defect reduction caused by pulse bias voltage, and the sheath movement characteristic of arc plasma can be improved, the number of large particle defects on the surface of the film can be reduced, the quality of the film can be improved, the method is widely applied to actual production, but the large particle defects can not be completely eliminated. The domestic scholars (Weiyongqiang, Zongya, Jiangqiang, Wenxianghua, Chengjibifiao, the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight pipe, the publication number is CN103276362A, the publication date is 2013, 9 and 4 days) provide the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight pipe, and the multistage magnetic field filtering device is used for eliminating the large particle defect and improving the transmission efficiency of the plasma; there are also researchers (Zhang, Hou Junda, Liu Shi, Zhang Ying Smart, magnetic filtration cathode arc plasma source and its film preparation [ J ]. Chinese surface engineering, 2002, 02): 11-15+ 20-12.) refer to the method of Bilek plate (Bilek M M M, Yin Y, McKenzie D R, Mille W I A M W I. Ion transport mechanism in a Filtered Catalytic Vacuum Arc (FCVA) system [ C ]. Proceedings of the channels and electric Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIII International Symposium on, 1996: 962:. 966), and positive bias is applied to the bend of the 90 degree bend magnetic filter device to improve the plasma transmission efficiency.

In order to solve the problem of difficult ionization in the aspect of using high-melting-point targets by Magnetron sputtering technology, the limitations of the existing arc ion plating and Magnetron sputtering methods in the aspect of using targets are expanded, the twin-target high-power pulse Magnetron sputtering can be fully utilized to sputter and deposit low-melting-point metal materials (such as aluminum and tin), multi-element alloy materials (such as aluminum-silicon alloy), non-metal materials (such as graphite) and semiconductor materials (such as silicon) (Kelly, P. J., J. high position, Y. ZHou, R.D. Pilkington, R.D. Arnell. Advanced Coatings Through purified Magnetron sputtering. Surface Engineering, 2004, 20(3): 157. 162. and Heister U, Krempel-Hessel J, Szczzzkyrboki J, Teschner G, Bruch J, Br ä uer G. J. and Magnetova. J. promoter J. (III.), 2000, 59 (2-3): 424 and 430), and simultaneously utilizes the advantages of the arc ion plating in the aspects of high melting point and difficult ionization target material, and combines the elimination of large particles by a magnetic filtering device and the guarantee of plasma transmission efficiency to realize the preparation of films with various materials, component proportions and structures.

Disclosure of Invention

The invention aims to solve the problems of low ionization rate and film deposition efficiency, use limitation of high-melting point target materials, unstable discharge and ion resorption of the conventional high-power pulse magnetron sputtering, the problems of low arc plasma transmission efficiency, target material element use and uniform ablation limitation, film deposition density and defect problems, deposition position limitation and workpiece shape limitation caused by space and target source space layout design of a vacuum chamber and the like of the conventional arc ion plating method by adopting low-melting point pure metal or multi-element alloy materials and non-metal materials (such as graphite, semiconductor material Si and the like) as the target materials of twin high-power pulse magnetron sputtering, the plasma generating device can also adopt two different unit targets or the combination of the unit targets and the multi-element targets, and the combination of the two multi-element targets, realize the generation of multi-element composite plasma, further can deposit films of various unit, multi-element and compound types and different element proportions, eliminate the problems of sparking and ion resorption caused by charge accumulation of the existing high-power pulse magnetron sputtering discharge by utilizing the bipolar characteristic of a twin-target high-power pulse magnetron sputtering power supply, further realize the generation of the plasma with continuous stability and high ionization rate by utilizing an arc ion plating method and the generation of the high-melting point ionization-resistant target, eliminate the large particle defect contained in the arc plasma by combining the magnetic field constraint of a movable coil device and the composite action of self bias electric field attraction, simultaneously control the transmission direction of the arc plasma in a vacuum chamber by utilizing the movable coil device, realize the control and adjustment of the film deposition and the film components on the surface of a substrate workpiece at any position in the vacuum chamber, the loss of composite plasma in a vacuum chamber is reduced, the problem of uneven film deposition caused by the limitation of the space positions of the vacuum chamber and a target source or the limitation of the shape of a substrate is solved, the ion energy of the surface of a workpiece is adjusted under the condition of applying negative bias, the large particle defect in the arc plasma is eliminated by utilizing the inhibition effect of a bias electric field on the surface of the substrate, a continuous and compact high-quality film is prepared, the addition control of the content of a target element in the film is realized, the production cost of using an alloy target is reduced, the transmission efficiency of the plasma is improved, the deposition speed of the film is increased, and the adverse effects of the large particle defect on the microstructure, the continuous and compact deposition and the use performance of the film are reduced or even eliminated, so that the electric arc ion plating and twin target high-power pulse magnetron sputtering device with the active magnetic field is provided.

The device used by the invention comprises a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a twin target high-power pulse magnetron sputtering power supply (4), a twin target high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a twin target high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a sample table (12) and a vacuum chamber (13);

in the device:

a substrate workpiece to be processed is arranged on a sample table (12) in a vacuum chamber (13), an electric arc ion plating target source (3), a twin target high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (12), the sample table (12) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the twin target high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (13) and are respectively connected with the negative electrode output ends of an electric arc power supply (2) and the twin target high-power pulse magnetron sputtering power supply (4), one end of a twin target high-power pulse magnetron sputtering power waveform oscilloscope (7) is grounded, the other end of the twin target high-power pulse magnetron sputtering power supply (4) is connected with the output end, the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the positive and negative connection method can be determined according to the direction of an output magnetic field, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative electrode of the bias power supply (1) is connected with the sample table (12), one end of the bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), and a power supply master control switch and an external water-cooling circulation system are started;

and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10^-4When Pa is needed, the working gas is introduced to 0.01 Pa-10 Pa, the bias power supply (1) and the bias power supply waveform oscilloscope (6) are started, and the bias power supply (1) can be direct current or single pulseThe bias voltage is multi-pulse, direct current pulse composite or bipolar pulse bias voltage, the output bias voltage amplitude, the pulse frequency and the pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is 200 kW;

the waveform synchronous matching device (8) is started, the bias power waveform oscilloscope (6) displays the waveform output by the bias power (1), the twin target high-power pulse magnetron sputtering power waveform oscilloscope (7) displays the output waveform of the twin target high-power pulse magnetron sputtering power (4), and the synchronous trigger signal output by the waveform synchronous matching device (8) controls the bias power (1) and the twin target high-power pulse magnetron sputtering power (4) to work;

starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;

the twin target high-power pulse magnetron sputtering power supply (4) is started, the technological parameters required by the twin target high-power pulse magnetron sputtering power supply (5) are adjusted through direct current glow starting and pre-ionization, a twin target high-power pulse magnetron sputtering power supply waveform oscilloscope (7) displays the pulse waveform output by the twin target high-power pulse magnetron sputtering power supply (4), the twin target high-power pulse magnetron sputtering power supply (4) adopts the working modes of unipolar single pulse, unipolar multi-pulse, unipolar single-section deep oscillation pulse, unipolar multi-section deep oscillation pulse, bipolar single pulse, bipolar multi-pulse, bipolar single-section deep oscillation pulse, bipolar multi-section deep oscillation pulse, 100W-500 kW of output power, 0 kHz-10 kHz and 10A-5000A of peak current, the positive and negative pulse width is 1-3000 mus, the working voltage is 100-4000V, the positive and negative pulse interval is set to be 5-3000 mus, then the working voltage, the peak current, the positive and negative pulse width and the interval output by the twin target high-power pulse magnetron sputtering target source (5) are selected according to the target material type, size and deposition process, stable multi-element composite plasma is generated, and the element proportion of the twin target material in the film is adjusted; the pulse voltage, duty ratio of each section, frequency and deep oscillation waveform of the twin target high-power pulse magnetron sputtering power supply (4) can be independently adjusted, wherein the unipolar multi-pulse, unipolar single-section deep oscillation pulse and unipolar multi-section deep oscillation pulse can adjust the high-power starting pulse voltage amplitude and waveform mode, so that the twin target high-power pulse magnetron sputtering power supply (5) rapidly enters an abnormal glow discharge mode, the target current of the twin target high-power pulse magnetron sputtering power supply (5) is rapidly increased through the transient improvement of the pulse voltage peak value, the plasma density and ionization rate of the high-power pulse magnetron sputtering are increased, then the twin target high-power pulse magnetron sputtering power supply (4) enters a normal low-voltage high-current discharge state of the high-power pulse magnetron sputtering, and the discharge state of the twin target high-power pulse magnetron sputtering power supply (5) can be improved through the transient deep oscillation mode, the influence of unstable discharge factors such as sparking and ion resorption caused by charge accumulation on the film preparation is eliminated, and the deposition rate of the film is also favorably improved; the deep oscillation pulse bias can be started and started when the twin target high-power pulse magnetron sputtering power supply (4) works, the adverse effect of ignition on plasma discharge is reduced, the deep oscillation pulse bias can also be started in the middle, the plasma density is improved, the stress of film deposition is adjusted, the deep oscillation pulse bias can also be started at the end stage, the smooth proceeding of the next stage discharge is facilitated, the amplitude of the deep oscillation pulse voltage can also be adjusted to be different or in-stage variation, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage and be matched with the output pulse of the bias power supply (1) in the cycle, the pulse waveform of the bias power supply is matched with the integral multiple of the waveform, different phases and different pulse widths of the twin target high-power pulse magnetron sputtering power pulse, and the film deposition is performed;

the waveform synchronous matching device (8) controls the output voltage of the bias power supply (1) and the output voltage of the twin target high-power pulse magnetron sputtering power supply (4) to ensure that the phase difference between the two is-1000 mus, so as to ensure the effective attraction of the matrix to the metal plasma and the adjustment of ion energy, and prepare pure metal films, compound ceramic films with different element proportions, functional films and high-quality films with nano multilayer or gradient structures;

the power supply (10) of the movable coil device is started, the movable coil device (9) is adjusted through the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the electric arc of the electric arc ion plating target source (3) is controlled, the magnetic field generated by the movable coil device (9) is utilized to keep the electric arc plasma stably generated in the electric arc ion plating target source (3), the shape of the movable coil device and the distribution and direction of magnetic force lines of the magnetic field are utilized, the movable coil can adopt a classic 90-degree bending type, and can also adopt a linear and bending and linear combination (the magnetic force lines of the linear part are tangent and intersected with the magnetic force lines of the bending part), a linear and linear combination (the magnetic force lines of the linear part are intersected), a linear, arc and linear combination (the combination of three sections are intersected and tangent) and a typical coil structure combination such as a circular arc, a linear and circular arc combination (the tangency and the tangency among the three sections) and the like, the arc and the straight line part are determined according to the requirements of space positions and transmission paths, the large particle defects in arc plasma are filtered and eliminated, the ablation uniformity of the target is ensured, the utilization efficiency of the target is improved, the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the composite plasma passes through the movable coil device (9) with high transmission efficiency, the adjustment of the magnetic field direction and the magnetic field intensity is realized, the arc plasma and the twin target high-power pulse magnetron sputtering plasma are guided to any position in the vacuum chamber (13) or the surface of a substrate with any shape on the sample table (12), the problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the substrate shape due to the space of the vacuum chamber and the layout design of a target source is solved, the number of turns, the ion suck and the ion suck of the coil of the movable coil device (9), The distance, the shape, the transmission path and the like of the coil are adjusted to control the composite plasma, reduce the loss of the composite plasma in the vacuum chamber (13), eliminate the large particle defect in the arc plasma and carry out the rapid deposition of the film; the output resistance of the rheostat device (11) is adjusted, the positive bias voltage change on the movable coil device (9) is realized, the electric field generated by the positive bias voltage can realize the attraction of electrons and residual large particles in the arc plasma, the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of composite plasma; the positive electrode and the negative electrode of a power supply (10) of the movable coil device provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, the composite plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, the surface of the matrix is reached at high transmission efficiency, the composite plasma is prevented from being lost in a vacuum chamber (13), and the rapid deposition of a film is realized;

the arc ion plating target source (3), the twin target high-power pulse magnetron sputtering target source (5) and the movable coil device (9) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.

According to the preparation requirement of the film, relevant process parameters are adjusted to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano multilayer or gradient structures.

The invention has the advantages that: a. the bipolar characteristic of a twin-target high-power pulse magnetron sputtering power supply is utilized to eliminate the problems of sparking and ion resorption caused by charge accumulation of high-power pulse magnetron sputtering discharge at present, an arc ion plating method is utilized to realize that a high-melting-point difficult-to-ionize target generates continuous stable and high-ionization-rate plasma, the twin-target high-power pulse magnetron sputtering technology realizes higher metal particle ionization rate of the target through high-pressure low-frequency pulse without other auxiliary ionization devices, no large-particle defects are generated on low-melting-point pure metal (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si), two different unit targets or combinations of units and multi-elements and two multi-element targets can be adopted to realize multi-element composite plasma generation, and various units, ions, and the like can be deposited, Films of multiple and compound types and different element ratios; b. the arc ion plating target source can make up the limitation of the high-melting-point difficult-to-ionize target material of the high-power pulse magnetron sputtering target source and ensure the high-density continuous generation of the deposition ions; c. due to the adoption of the waveform synchronous matching device, the substrate can effectively attract ions generated by the twin target high-power pulse magnetron sputtering target source and adjust the ion energy, the film deposition rate is ensured, and the energy of the deposited ions is greatly improved; d. by adjusting the technological parameters of the twin target high-power pulse magnetron sputtering target source and combining the technological parameters of the arc ion plating target source, the ion proportion of various elements in the composite plasma can be realized, and the deposition of films with different element proportions can be realized; e. the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by using the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the film-substrate bonding strength is improved, and the service performance of the film is improved; f. because the application limit of low-melting point pure metal (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in arc ion plating is eliminated, the defect of large particles of low-melting point elements is avoided, the addition and the flexible adjustment of the proportion of the elements in the original multi-element film preparation process can be realized, the crystal structure of the prepared film is more compact, and the mechanical property of the film can be further improved; g. by utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic force lines of a magnetic field, the movable coil can adopt a classic 90-degree bending type, and can also adopt typical coil structure combinations such as straight line and bending, bending and straight line combination (the magnetic force lines of the straight line part are tangent and intersected with the magnetic force lines of the bent part), straight line and straight line combination (the magnetic force lines of the two straight line parts are intersected), straight line, arc and straight line combination (the combination of three sections are intersected and tangent) and arc, straight line and arc combination (the tangency and the intersection among the three parts) and the like, wherein the arc and the straight line part are determined according to the requirements of spatial position and transmission path, the effective control of an arc plasma transmission path is realized, the large-particle defect is eliminated, and the problems of unstable discharge and ion suck-back of twin target high-power pulse magnetron sputtering technology are solved, the loss of the composite plasma in the transmission process of the vacuum chamber is reduced, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved by guiding the magnetic field of the movable coil, the preparation of the film can be realized at the optimal position of the vacuum chamber, the limitation and conflict of the design of the vacuum chamber in the aspects of space, target source assembly position and deposition position are broken through, the composite plasma is deposited on the surface of a substrate with any shape at high speed, the series resistance value of the movable coil can be adjusted by a rheostat device, the adjustment of the self positive bias parameters of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, and the large particle defect in the film is eliminated; h. the pulse bias power supply eliminates the residual large particle defects and optimizes the adjustment of the energy of the arc plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency through the rejection suppression effect of the electric field, eliminates the residual large particle defects, increases the deposition speed of the film, reduces the loss of the composite plasma in a filtering device and a vacuum chamber, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, can ensure that the crystal structure and the microstructure of the film are more compact, and is favorable for further improving the use performance of the film.

The device can be combined by a single set or a plurality of sets, and combines the waveform control of a waveform synchronous matching device (8) and various types of combinations of a movable coil device (9) to realize the optimized matching of different waveforms and the transmission path guidance of a movable coil magnetic field, and prepare a pure metal film, a compound ceramic film with different element proportions, a functional film and a film with a nano multilayer or gradient structure at any position in a vacuum chamber, or adopt the single set or the plurality of sets of devices and combine the traditional direct current magnetron sputtering, the pulse magnetron sputtering, the traditional arc ion plating, the pulse cathode arc and the direct current bias, the pulse bias or the direct current pulse composite bias device to realize the combination of two or more than two deposition modes to carry out the film deposition, prepare the pure metal film, the double-magnetic-field and the double-magnetic-field magnetic-transfer path guidance, Compound ceramic film with different element proportion, functional film and high quality film with nano multilayer or gradient structure.

Drawings

FIG. 1 is a simplified assembly diagram of an arc ion plating and twin target high power pulse magnetron sputtering apparatus with a moving magnetic field according to the first embodiment of the present invention; FIG. 2 is a simplified view of the assembly of the arc ion plating and twin target high power pulse magnetron sputtering apparatus with a moving magnetic field according to the invention in 2 nd; FIG. 3 is a schematic view of the assembly of FIG. 1 showing 7 structural configurations of the moving coil; FIG. 4 is a schematic view of the 6 structural configurations of the moving coil in the 2 nd assembly diagram; FIG. 5 is a waveform synchronization matching apparatus; FIG. 6 is a twin target high power pulsed magnetron sputtering power supply voltage waveform; FIG. 7 is a bias power pulse waveform and a twin target high power pulse magnetron sputtering unipolar single pulse waveform integral multiple; FIG. 8 shows that the bias power pulse waveform and the twin target high power pulse magnetron sputtering unipolar single pulse waveform are out of phase; FIG. 9 is a matching graph of different pulse widths of a bias power supply pulse waveform and a twin target high power pulse magnetron sputtering unipolar single pulse waveform.

Detailed Description

The first embodiment is as follows: the following describes the present embodiment with reference to fig. 1 to 9, and the device used in the arc ion plating and twin target high power pulse magnetron sputtering device of the movable magnetic field of the present embodiment includes a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a twin target high power pulse magnetron sputtering power supply (4), a twin target high power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a twin target high power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronization matching device (8), a movable coil device (9), a movable coil device power supply (10), a varistor device (11), a sample stage (12) and a vacuum chamber (13);

in the device:

and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10^-4When the voltage is Pa, working gas is introduced to 0.01-10 Pa, the bias power supply (1) and the bias power waveform oscilloscope (6) are started, the bias power supply (1) can be direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, the output bias amplitude, the pulse frequency and the pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is200kW；

the power supply (10) of the movable coil device is started, the movable coil device (9) is adjusted through the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the electric arc of the electric arc ion plating target source (3) is controlled, the magnetic field generated by the movable coil device (9) is utilized to keep the electric arc plasma stably generated in the electric arc ion plating target source (3), the shape of the movable coil device and the distribution and direction of magnetic force lines of the magnetic field are utilized, the movable coil can adopt a classic 90-degree bending type, and can also adopt a linear and bending and linear combination (the magnetic force lines of the linear part are tangent and intersected with the magnetic force lines of the bending part), a linear and linear combination (the magnetic force lines of the linear part are intersected), a linear, arc and linear combination (the combination of three sections are intersected and tangent) and a typical coil structure combination such as a circular arc, a linear and circular arc combination (the tangency and the tangency among the three sections) and the like, the arc and the straight line part are determined according to the requirements of space positions and transmission paths, the large particle defect in the arc plasma is filtered and eliminated, the ablation uniformity of the target is ensured, the utilization efficiency of the target is improved, the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the composite plasma passes through the movable coil device (9) with higher transmission efficiency, the adjustment of the magnetic field direction and the magnetic field intensity is realized at the same time, the arc plasma and the twin target high-power pulse magnetron sputtering plasma are guided to reach any position in the vacuum chamber (13) or the surface of a substrate with any shape on the sample table (12), the composite plasma is controlled by adjusting the number of turns of the coil, the distance between the coils, the shape, the transmission path and the like of the movable coil device (9), and the loss of the composite plasma in the vacuum chamber (13) is reduced, large particle defects in arc plasma are eliminated, the problem of uneven film deposition caused by limitation of deposition positions or limitation of substrate shapes due to the layout design of a vacuum chamber space and a target source is solved, and the film is rapidly deposited; the output resistance of the rheostat device (11) is adjusted, the positive bias voltage change on the movable coil device (9) is realized, the electric field generated by the positive bias voltage can realize the attraction of electrons and residual large particles in the arc plasma, the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of composite plasma; the positive electrode and the negative electrode of a power supply (10) of the movable coil device provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, the composite plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, the surface of the matrix is reached at high transmission efficiency, the composite plasma is prevented from being lost in a vacuum chamber (13), and the rapid deposition of a film is realized;

The output waveform of the bias power supply (1) is direct current, single pulse, direct current pulse composite, multi-pulse composite or bipolar pulse.

The output direct current of the arc power supply (2), single pulse, direct current pulse composite or multi-pulse composite.

The arc ion plating target source (3) adopts a high-melting-point target material, a low-melting-point pure metal or multi-element alloy material and a non-metal material (such as graphite), the twin-target high-power pulse magnetron sputtering target source (5) adopts a low-melting-point pure metal (such as aluminum and tin) or multi-element alloy material (such as AlSi alloy) and a non-metal material (such as graphite and semiconductor material Si), and a single target, a plurality of targets or a composite target can be used for carrying out pure metal thin films, compound ceramic thin films with different element ratios, functional thin films, multi-element multi-layer, superlattice and high-quality thin films with nano multi-layer or gradient structures.

The working gas is argon or the mixed gas of one or more of nitrogen, acetylene, methane, silane or oxygen to prepare pure metal film, compound ceramic film with different element proportions, functional film, multi-component multi-layer, superlattice, nano multi-layer or gradient structure film.

The arc ion plating of the movable magnetic field and the twin target high-power pulse magnetron sputtering device are provided, the sputtering target source in the twin target high-power pulse magnetron sputtering is fully utilized to simultaneously generate and ionize ions, the application limit of low-melting-point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in the arc ion plating is broken through, and the problem of large particles generated by low-melting-point materials is effectively avoided; meanwhile, the waveform synchronous matching device is used for controlling the negative bias applied to the workpiece and the parameters of the twin-target high-power pulse magnetron sputtering process, so that the potential distribution of a plasma region of the twin-target high-power pulse magnetron sputtering target source is favorably improved, ions generated by the twin-target high-power pulse magnetron sputtering are fully attracted to move towards the workpiece, and the problems of unstable discharge and low film deposition efficiency caused by the ion suck-back effect in the high-power pulse magnetron sputtering are effectively solved; meanwhile, the arc ion plating technology is used for generating stable and continuous metal plasmas with high ionization rate, so that the defect of unstable discharge of the high-power pulse magnetron sputtering technology is overcome, the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece is facilitated, and compound ceramic films, functional films, multi-component multi-layer films, super-lattices and films with gradient structures or pure metal films with different element ratios are prepared; the arc ion plating of the movable magnetic field and the twin target high power pulse magnetron sputtering device, by utilizing the shape of the movable coil device and the matching of the magnetic line layout and direction of the magnetic field, the movable coil can adopt the classic 90-degree bending type, and can also adopt the typical coil structure combination of straight line and bending, bending and straight line combination (the magnetic line of the straight line part is tangent and intersected with the magnetic line of the bending part), straight line and straight line combination (the magnetic line of the two straight line parts is intersected), straight line, arc and straight line combination (the combination of three sections are intersected and tangent) and arc, straight line and arc combination (the tangency and the intersection of the three parts) and the like, wherein the arc and the straight line part are determined according to the space position and the requirement of the transmission path (as shown in figures 1-4), thereby realizing the effective control of the arc plasma and the twin target high power pulse magnetron sputtering plasma transmission path, the large particle defect in the arc plasma is eliminated, the problems of unstable discharge and ion resorption of a high-power pulse magnetron sputtering technology are solved, the loss of the composite plasma in the transmission process of a vacuum chamber is reduced, the problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the shape of a base body due to the layout design of the space of the vacuum chamber and a target source is solved through the guidance of a magnetic field of a movable coil, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved, the preparation of the film can be realized at the optimal position of the vacuum chamber, the series resistance value of the movable coil can be adjusted through a rheostat device, the adjustment of the positive bias parameter of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, and the residual large particle defect is eliminated, increasing the deposition rate of the film; the magnetic field of the movable coil device is restricted to ensure the stable movement of the electric arc on the surface of the target material, continuous electric arc plasma is generated, the high-efficiency transmission of the electric arc plasma in the movable coil device is realized through the magnetic force line of the movable coil device, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, and the large particle defect in the electric arc plasma is removed; the pulse bias power supply eliminates the residual large particle defects and adjusts and optimizes the energy of the arc plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field, improves the interval potential distribution of the plasma near the matrix, fully attracts the arc plasma to move towards a workpiece, and realizes the rapid deposition of the film; the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; meanwhile, the arc ion plating technology is utilized to generate stable and continuous metal plasma with high ionization rate, which is beneficial to the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece, and compound ceramic films, functional films, multi-component multi-layer films, super lattices and films with gradient structures or pure metal films with different element ratios are prepared; the film prepared by the arc ion plating of the movable magnetic field and the twin target high-power pulse magnetron sputtering device eliminates the defect of large particles in the film, reduces the loss of the composite plasma in a filtering device and a vacuum chamber, avoids the pollution of lining plate residues to the film caused by the replacement of different target materials, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, optimizes the energy distribution of the composite plasma by using pulse bias, can ensure that the crystal structure and microstructure of the film are more compact, and is beneficial to further improving the use performance of the film.

The second embodiment is as follows: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high-power pulse magnetron sputtering device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronization matching device (8) (shown in figure 5) is used for controlling the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the period of the output pulse of the twin target high-power pulse magnetron sputtering power supply (4) is integral multiple of the output pulse of the bias power supply (1), as shown in figure 7, the pulse period output by the twin target high-power pulse magnetron sputtering power supply (4) is 8 times of the pulse period output by the bias power supply (1), the technological parameters are adjusted, the film deposition is carried out, and the preparation of the twin target high-power pulse magnetron sputtering device with different stress states is carried out, The microstructure and element ratio of the multilayer structure film are the same as those in the first embodiment.

The third concrete implementation mode: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the phases of the bias pulse waveforms output by the twin target high power pulse magnetron sputtering power supply (4) and the bias power supply (1) are adjustable, as shown in figure 8, when the pulse widths are the same, the output pulse waveforms of the two power supplies can be completely overlapped, partially overlapped or not overlapped, so that the reasonable matching of the two power supply pulses is selected according to the process of thin film deposition, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The fourth concrete implementation mode: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high-power pulse magnetron sputtering device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronization matching device (8) (shown in figure 5) is used for controlling the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the pulse widths of the output high-power pulse of the twin target high-power pulse magnetron sputtering power supply (4) and the output pulse of the bias power supply (1) to be independently adjustable, as shown in figure 9, the different pulse widths enable the output pulse waveforms of the two power supplies to cover the latter and the latter or completely coincide, the technological parameters are adjusted to carry out film deposition, and the film deposition is prepared to have different stress states, The microstructure and element ratio of the multilayer structure film are the same as those in the first embodiment.

The fifth concrete implementation mode: the present embodiment is different from the first embodiment in that the apparatus further includes: and step three, combining one or more of the traditional direct current magnetron sputtering method, the pulse magnetron sputtering method, the traditional arc ion plating method and the pulse cathode arc method, and applying a direct current bias voltage, a pulse bias voltage, a direct current pulse composite bias voltage or a bipolar pulse bias voltage device on the workpiece to perform film deposition to prepare a pure metal film, a compound ceramic film with different element ratios, a functional film and a high-quality film with a nano multilayer or gradient structure.

The sixth specific implementation mode: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with a twin-target high-power pulse magnetron sputtering device, in the second step, a twin-target high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force of the film and the substrate is improved, then the third step is carried out, and the second step and the third step are repeatedly carried out to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the second embodiment.

The seventh embodiment: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with a twin-target high-power pulse magnetron sputtering device, in the second step, a twin-target high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force of the film and the substrate is improved, then the third step is carried out, and the second step and the third step are repeatedly carried out to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the third embodiment.

The specific implementation mode is eight: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with a twin-target high-power pulse magnetron sputtering device, in the second step, a twin-target high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force of the film and the substrate is improved, then the third step is carried out, and the second step and the third step are repeatedly carried out to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the fourth embodiment.

The specific implementation method nine: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is unipolar multi-pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) with the period, the bias power supply pulse waveform and the twin target high power pulse magnetron sputtering pulse are matched with integral multiple, different phases and different pulse widths, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The detailed implementation mode is ten: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is a unipolar single-segment deep oscillation pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) in period, the bias power supply pulse waveform and the twin target high power pulse magnetron sputtering pulse have integral multiple, different phases and different pulse widths, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The concrete implementation mode eleven: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is a unipolar single-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse voltage can be turned on when the twin target high power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of sparking on plasma discharge and can also be turned on in the middle, which is beneficial to improving plasma density, adjusting the stress of film deposition, starting at the end stage to facilitate smooth discharge at the next stage, wherein the amplitude of the deep oscillation pulse voltage can be the same as or different from that of the pulse stage, the deep oscillation pulse stage can occupy the whole pulse period to form a deep oscillation pulse voltage mode, and then the deep oscillation pulse voltage mode is matched with the output pulse of a bias power supply (1) with the period, and the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the twin target high-power pulse magnetron sputtering pulse waveform, as shown in fig. 7, 8 and 9, the process parameters are adjusted to perform film deposition to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the first embodiment.

The specific implementation mode twelve: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is unipolar multi-stage deep oscillation pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) in cycle, the waveform of the bias power supply pulse is matched with the waveform, the non-integral multiple phase and different pulse width of the twin target high power pulse magnetron sputtering pulse, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The specific implementation mode is thirteen: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is unipolar multi-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse bias can be turned on when the twin target high power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of sparking on plasma discharge, and can be turned on in the middle, which is beneficial to improving plasma density, the stress of film deposition is adjusted, the film deposition can be started at the end stage, the smooth proceeding of the next stage of discharge is facilitated, the amplitude of each section of deep oscillation pulse voltage can be the same as the pulse stage, or can be different, the same or different deep oscillation pulse voltage amplitude can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or in-stage change amplitude, and then the deep oscillation pulse voltage is matched with the output pulse of a bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the twin target high-power pulse magnetron sputtering pulse waveform, as shown in figures 7, 8 and 9, the technological parameters are adjusted, the film deposition is performed, the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other parts are the same as the first embodiment.

The specific implementation mode is fourteen: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high-power pulse magnetron sputtering device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronization matching device (8) (shown in figure 5) is used for controlling the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the pulse output by the twin target high-power pulse magnetron sputtering power supply (4) is a bipolar single pulse, as shown in figure 6, wherein the integral voltage amplitude of the ending stage is beneficial to reducing the accumulation of the target surface potential, eliminating the ignition phenomenon, enabling the discharge of the next pulse to be carried out smoothly, and then is matched with the output pulse of the bias power supply (1) in the period, the pulse waveform of the bias power supply and the waveform of the twin target high-power pulse magnetron sputtering device are integral multiple of the pulse waveform, Matching of different phases and different pulse widths, as shown in fig. 7, 8 and 9, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation method nine: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is bipolar multi-pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) with the period, the bias power supply pulse waveform and the twin target high power pulse magnetron sputtering pulse are integer multiples, different phases and different pulse widths, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The concrete implementation mode is fifteen: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the twin target high power pulse magnetron sputtering power supply (4) outputs bipolar unipolar single-segment deep oscillation pulses, as shown in fig. 6, and then is matched with the pulses output by the bias power supply (1) in cycle, the bias power supply pulse waveform and the twin target high power pulse magnetron sputtering pulse waveform are matched with integral multiple, different phases and different pulse widths, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The specific implementation mode is sixteen: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is a bipolar unipolar single-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse bias can be turned on when the twin target high power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of sparking on plasma discharge and can also be turned on in the middle, which is beneficial to improving plasma density, the stress of film deposition is adjusted, the film deposition can be started at the end stage, the smooth proceeding of the next stage of discharge is facilitated, the amplitude of the voltage of the deep oscillation pulse can be adjusted to be different or in a stage-changed amplitude, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage, and then the deep oscillation pulse is matched with the output pulse of the bias power supply (1) with the cycle, and the bias power supply pulse waveform is matched with the twin target high-power pulse magnetron sputtering pulse waveform in integral multiple, different phases and different pulse widths, as shown in fig. 7, 8 and 9, the process parameters are adjusted, the film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other parts are the same as the first embodiment.

Seventeenth embodiment: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is bipolar unipolar multi-stage deep oscillation pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) in period, the waveform of the bias power supply pulse is matched with the waveform, the non-integral multiple phase and different pulse width of the twin target high power pulse magnetron sputtering pulse, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The specific implementation mode is eighteen: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is bipolar unipolar multi-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse bias can be turned on when the twin target high power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of sparking on plasma discharge, and can be turned on in the middle, which is beneficial to improving plasma density, the stress of the film deposition is adjusted, the film deposition can be started at the end stage, the smooth proceeding of the next stage discharge is facilitated, the amplitude value of the deep oscillation pulse voltage can be the same as the pulse stage or different from the pulse stage, the amplitude value of the deep oscillation pulse voltage can be adjusted to be different or stage-wise change amplitude value, the deep oscillation pulse can appear at the negative pulse stage, the deep oscillation pulse can appear at the positive pulse stage, the deep oscillation pulse can be matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the twin target high-power pulse magnetron sputtering pulse waveform, as shown in fig. 7, 8 and 9, the process parameters are adjusted, and the thin film deposition is performed to prepare the multi-layer structure thin film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The detailed embodiment is nineteen: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the twin target high power pulse magnetron sputtering power supply (4) outputs bipolar single-segment deep oscillation pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) in cycle, the bias power supply pulse waveform and the twin target high power pulse magnetron sputtering pulse are matched with integral multiple, different phases and different pulse widths, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The specific implementation mode twenty: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronization matching device (8) (shown in figure 5) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is bipolar single-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse bias can be turned on when the twin target high power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of sparking on plasma discharge and can also be turned on in the middle, which is beneficial to improving plasma density, adjusting the stress of film deposition, starting at the end stage to facilitate smooth discharge at the next stage, adjusting the amplitude of the deep oscillation pulse voltage to be the same as or different from the pulse stage, and adjusting the amplitude of the deep oscillation pulse voltage to be different or changed in stages, and matching the amplitude with the output pulse of the bias power supply (1) with the period, wherein the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the twin target high-power pulse magnetron sputtering pulse waveform, as shown in fig. 7, 8 and 9, adjusting process parameters to perform film deposition to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the others are the same as the first embodiment.

The specific implementation mode is twenty one: the difference between the present embodiment and the first embodiment is that the arc ion plating of the moving magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the moving coil device power supply (10) is turned on to adjust the moving coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in fig. 5) is used to control the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the twin target high power pulse magnetron sputtering power supply (4) is bipolar two-pole multi-stage deep oscillation pulse, as shown in fig. 6, and then is matched with the output pulse of the bias power supply (1) in cycle, the waveform of the bias power supply pulse is matched with the waveform, different integral multiple phases and different pulse widths of the twin target high power pulse magnetron sputtering pulse, as shown in fig. 7, 8 and 9, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

Specific embodiment twenty-two: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the twin target high power pulse magnetron sputtering device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) (shown in figure 5) is used for controlling the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the pulse output by the twin target high power pulse magnetron sputtering power supply (4) is bipolar two-pole multi-section deep oscillation pulse, as shown in figure 6, wherein the deep oscillation pulse bias can be turned on when the twin target high power magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge, and can be turned on in the middle, which is beneficial to improving plasma density, adjusting the stress of film deposition, starting at the end stage to facilitate the smooth proceeding of the next stage discharge, wherein the amplitude of the deep oscillation pulse voltage can be the same as the pulse stage or different from the pulse stage, the amplitude of each section of the deep oscillation pulse voltage can be the same as the pulse stage or different from the pulse stage, the same or different amplitude of the deep oscillation pulse voltage can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages, and then the deep oscillation pulse voltage is matched with the output pulse of the bias power supply (1) with the period, the bias power supply pulse waveform is matched with the twin target high-power pulse magnetron sputtering pulse waveform in integral multiple, different phases and different pulse widths, as shown in figures 7, 8 and 9, the process parameter adjustment is carried out to carry out film deposition, prepare the multilayer structure film with different stress states, microstructures and element proportions, the rest is the same as the first embodiment.

Specific embodiment twenty-three: the difference between the present embodiment and the first embodiment is that the arc ion plating of the active magnetic field is connected to the twin target high power pulse magnetron sputtering apparatus, the arc power supply (2) is turned on, the active coil apparatus power supply (10) is turned on to adjust the active coil apparatus (9), the rheostat apparatus (11) is adjusted to output resistance, the waveform synchronization matching apparatus (8) (shown in fig. 5) controls the bias power supply (1) and the twin target high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the twin target high power pulse magnetron sputtering power supply (4) outputs unipolar single pulse, unipolar multipulse, unipolar single-segment deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar single pulse, bipolar multipulse, bipolar unipolar single-segment deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar bipolarity single-segment deep oscillation pulse, bipolar multipulse unipole multistage deep oscillation pulse, bipolar bipolarity single-segment deep oscillation pulse, bipolar multipulse monopolarity deep oscillation pulse, bipolar multipiece deep oscillation pulse, and the like, Two or more combinations of working modes of bipolar and dipolar multistage deep oscillation pulses are combined as shown in fig. 6, and then matched with the output pulse of a bias power supply (1) with the period being the integral multiple of the pulse waveform of the bias power supply, different phases and different pulse widths, as shown in fig. 7, 8 and 9, technological parameters are adjusted, film deposition is carried out, and a multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other steps are the same as the first embodiment.

Claims

1. The device is characterized by comprising a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a twin target high-power pulse magnetron sputtering power supply (4), a twin target high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a twin target high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a sample table (12) and a vacuum chamber (13);

in the device:

a substrate workpiece to be processed is arranged on a sample table (12) in a vacuum chamber (13), an electric arc ion plating target source (3), a twin target high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (12), the sample table (12) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the twin target high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (13) and are respectively connected with the negative electrode output ends of an electric arc power supply (2) and the twin target high-power pulse magnetron sputtering power supply (4), one end of a twin target high-power pulse magnetron sputtering power waveform oscilloscope (7) is grounded, the other end of the twin target high-power pulse magnetron sputtering power supply (4) is connected with the output end, the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative pole of the bias power supply (1) is connected with the sample stage (12), one end of the bias power supply waveform oscilloscope (6) is grounded, and the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1);

and (3) thin film deposition:

the arc ion plating target source (3), the twin target high-power pulse magnetron sputtering target source (5) and the movable coil device (9) adopt a direct water cooling mode.