CN214115699U - Moving magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition device - Google Patents

Moving magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition device Download PDF

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CN214115699U
CN214115699U CN201822240062.6U CN201822240062U CN214115699U CN 214115699 U CN214115699 U CN 214115699U CN 201822240062 U CN201822240062 U CN 201822240062U CN 214115699 U CN214115699 U CN 214115699U
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power supply
pulse
magnetron sputtering
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pulse magnetron
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魏永强
王好平
宗晓亚
张新国
刘学申
蒋志强
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Abstract

The invention discloses a movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition device, belongs to the technical field of surfaces, and aims to solve the problems of pollution of large particles in arc ion plating on a film, use limitation of a target material, loss of arc plasma in the transmission process of a magnetic filter device, unstable discharge of high-power pulse magnetron sputtering and the like. The apparatus of the present invention comprises: bias power supply, arc ion plating target source and power supply, movable coil device and power supply, and waveform matchingA device, a high-power pulse magnetron sputtering target source, a power supply, an oscilloscope and a vacuum chamber are arranged; and (3) thin film deposition: connecting device, starting system, vacuum degree in the vacuum chamber is less than 10‑4And when Pa is needed, introducing working gas, starting a film coating power supply, adjusting the energy of the arc plasma by using a bias power supply, eliminating the large particle defect and guiding a transmission path of the composite plasma through a movable coil device, reducing the loss in the vacuum chamber, setting process parameters, and preparing the film.

Description

Moving magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition device
Technical Field
The invention relates to a movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition device, belonging to the technical field of material surface treatment.
Background
In the process of preparing the film by arc ion plating, the current density of arc spots is as high as 2.5-5 multiplied by 1010A/m2The molten liquid metal, which is caused to appear at the location of the arc spot on the target surface, is sprayed out in the form of droplets under the action of the local plasma pressure, adheres to the surface of the film or is embedded in the film to form "large particle" (Macroparticles) defects (Boxman R L, gold limit s. Macroparticle contact in lateral coatings: generation, transport and control J]Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, the number of electrons reaching the surface of a large particle per unit time is larger than that of ions because the moving speed of electrons is much larger than that of ions, so that the large particle is negatively charged. With respect to films of micron or submicron thickness, large particle defects of 0.1-10 microns in size, as well as PM2.5, can be a serious detriment to the quality and performance of the film. With a film material andthe film technology is increasingly widely applied, and whether the problem of large particle defect is solved or not becomes the bottleneck of further development of the arc ion plating method, thereby seriously restricting the application of the arc ion plating method in the preparation of new-generation film materials.
The magnetron sputtering technology adopts a direct current power supply mode at first, compared with an arc ion plating method, the magnetron sputtering technology has no large particle defects, can realize low-temperature sputtering deposition of various materials, but has very low ionization rate of sputtering materials, and the power density of a sputtering target is 50W/cm2And the deposition efficiency is very low because a sufficient ion number is not obtained during the film deposition, and the energy carried by the ions is low, so that the film tissue is not compact enough. In 1999, V. Kouznetsov et al, university of forest-Xuezhei, Sweden (Kouznetsov V, Mac a k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetic neutron monitoring devices high target power dynamics [ J]Surf Coat Tech, 1999, 122(2-3): 290-. Compared with the common direct current magnetron sputtering, the peak power of the magnetron sputtering is improved by 100 times and is about 1000-3000W/cm2Density of plasma up to 1018m-3The ion density of the central area of the target can reach 1019m-3And the ionization rate of the sputtering material can reach more than 90 percent at the same time, and the sputtering material does not contain large particle defects in the existing arc ion plating method with the highest ionization rate. After 2008, research on high-power pulse magnetron sputtering technology (Lixiph. high-power composite pulse magnetron sputtering plasma characteristics and TiN film preparation [ D ] was also started in various colleges and universities in China]Development and study of high-power pulsed magnetron sputtering technique [ J ] of Wuzhong, Zhutao, Chunchui, Tiankuibo, Yangshijing, Lixiping, Haerbin university of industry 2008]Vacuum, 2009, 46(3): 18-22. and muzong, wang chun, jali, dong rushing. dc power supply coupled high power pulse unbalanced magnetron sputtering ionization characteristics [ J]Journal of physics, 2011, 60(1): 422-The target potential is low, a large amount of metal ions of the target metal are absorbed back to the target surface after ionization, and cannot reach the surface of the substrate to realize the deposition of the film, so that the film deposition efficiency is greatly reduced; ferreira et al (Ferreira F, Serra R, Oliveira J C, Cavaliiro A. Effect of peak target power on the properties of Cr in films dispensed by Hipims in depletion microorganisms Dispensed (DOMS) mode of the university of grape Dentist Enbrada]Surf Coat Tech, 2014, 258: 249-; the high-power composite pulse magnetron sputtering ion implantation and deposition method (publication number: CN101838795A, published date: 9/22/2010) of Chinese patent fully utilizes the advantages of high-power pulse magnetron sputtering by utilizing a high-voltage and pulse synchronous matching device, realizes the breakthrough of the high-power pulse magnetron sputtering technology in the field of ion implantation, but because of the limitation of a high-voltage power supply, the density of deposited ions reaching the surface of a substrate cannot be too high, otherwise, the high-voltage power supply is damaged, the further replacement of the steps of common magnetron sputtering and arc ion plating is influenced, and the subsequent popularization and application aspects are limited to a certain extent.
At present, in order to solve the problem that the arc ion plating method is prone to generate large grain defects when using pure metal or multi-element alloy materials with low melting points, magnetic filtration is mainly adopted to filter out large grains, such as the ceramic material prepared by the Plasma immersion ion implantation device (publication number: CN1150180, published date: 1997 5, 21) in Chinese patent, and the ceramic material prepared by the method is mainly prepared by filtering large grains of pulsed cathode arc by using a 90-degree magnetic filtration bent pipe, American scholars et al (Anders S, Anders A, Dickinson M R, Macgill R A, Brown I G. S-shaped magnetic macroparametric filter for catalytic deposition [ J ]. IEEE Trans Plasma Sci, 1997, 25(4): 670-674.) and Zhan-Nannan university (Zhang Jane Jue, Wu-Shi et al. magnetic filtration Plasma Weiwei et al. the influence of deposition conditions on the non-ferrous metal texture film in Zhan Yu Ju, Zhang Weiwei et al. magnetic filtration Plasma preparation film, 1264- & 1268.) in the article, "S" magnetic filter elbows were made to filter large particles of cathode arcs, and magnetic filtration of Twist filters proposed by American scholars et al (Anders A, MacGill R A. Twist filters for the removal of macro particles from the cathode plasma [ J ]. Surf Coat Tech, 2000, 133- & 134: 96-100.), and Dehua at Shanghai traffic university proposed adjustable open single-and dual-channel electromagnetic coil filters (D; Shanghai traffic university, 2009), which, although effective in filtering and eliminating large particles, have a significant loss in plasma transport efficiency and greatly reduced ion flux density.
On the basis of filtering large particles and guaranteeing the efficiency, a straight tube filtering method is proposed in a vacuum cathode arc straight tube filter (publication number: CN1632905, published: 6/29/2005) in China patent, but the filtering effect is reduced. In summary, relevant researchers found by comparing various magnetic filtration methods (Anders A. Applicheches to red catalytic array of macro-and nanoparticles: a Review [ J ]. Surf Coat Tech, 1999, 120-. In addition, a bias electric field suppression method is adopted on the substrate, and when negative bias is applied on the substrate, the electric field can generate repulsion action on negatively charged large particles, so that the generation of large particle defects on the surface of the thin film is reduced. Olbrich et al (Olbrich W, Fessmann J, Kampschult G, Ebberenk J. Improved control of TiN coating properties using a pulsed bias with a pulsed bias [ J ]. Surf COAT Tech, 1991, 49(1-3): 258) 262. and Fessmann J, Olbrich W, Kampschult G, Ebberenk J. capacitive deposition of TiN and Zr (C, N) at low substrate pulsed bias [ J ]. Mat Sci Eng A, 1991, 140: 830.) use of pulsed bias instead of conventional DC bias to form a new technology of pulsed bias ion plating, which not only greatly reduces the surface temperature of large particles but also overcomes the high temperature of the substrate, the internal stress of the film is large, and the like. The theory of influence of bias voltage on the surface morphology of an arc ion plating film [ J ]. Metallurgical Proc, 2003, 39(5): 510) is deeply analyzed aiming at the mechanism of large particle defect reduction caused by pulse bias voltage, and the sheath movement characteristic of arc plasma can be improved, the number of large particle defects on the surface of the film can be reduced, the quality of the film can be improved, the method is widely applied to actual production, but the large particle defects can not be completely eliminated. Anders also proposed (Anders A. Growth and discovery of macroparameters: A fe early to clean vacuum arc plasma. J Appl Phys, 1997, 82(8): 3679) that an infrared laser was used to assist in the evaporation of large particles, but the cost of the process equipment is too expensive.
Disclosure of Invention
The invention aims to solve the problems of low ionization rate and film deposition efficiency, use limitation of high-melting point target materials, unstable discharge and ion resorption of the conventional high-power pulse magnetron sputtering technology, the problems of high-melting point target materials, low-melting point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) which are adopted by the conventional arc ion plating method and are easy to generate large-particle defects, arc plasma transmission efficiency caused by a bending magnetic filtering technology is low, use limitation of target elements, uniform ablation of the target materials, film deposition density and defect problems, deposition position limitation and workpiece shape limitation caused by space layout design of a vacuum chamber and a target source space, and the like, and the problems of high-power pulse magnetron sputtering of low-melting point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) are adopted The target material is prepared by using an arc ion plating method to realize that the high-melting-point difficult-to-ionize target material generates continuous stable plasma with high ionization rate, eliminating the large-particle defect contained in the arc plasma by combining the composite action of magnetic field constraint of a movable coil device and self bias electric field attraction, controlling the transmission direction of the arc plasma in a vacuum chamber by using the movable coil device, realizing the control and regulation of the film deposition and film components on the surface of a substrate workpiece at any position in the vacuum chamber, reducing the loss of the composite plasma in the vacuum chamber, overcoming the problem of uneven film deposition caused by the space position limitation or the substrate shape limitation of the vacuum chamber and a target source, regulating the ion energy of the workpiece surface under the condition of applying negative bias, eliminating the large-particle defect in the arc plasma by using the bias electric field inhibition action of the substrate surface, and preparing the continuous plasma, The compact high-quality film simultaneously realizes the addition control of the content of target elements in the film, reduces the production cost of using an alloy target, improves the transmission efficiency of arc plasma, increases the deposition speed of the film, and reduces or even eliminates the adverse effects of large particle defects on the microstructure, continuous compact deposition and use performance of the film, and provides a moving magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition device.
The device used by the invention comprises a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high-power pulse magnetron sputtering power supply (4), a high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a sample table (12) and a vacuum chamber (13);
in the device:
a substrate workpiece to be processed is arranged on a sample table (12) in a vacuum chamber (13), an electric arc ion plating target source (3), a high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (12), the sample table (12) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (13) and are respectively connected with the negative electrode output ends of an arc power supply (2) and a high-power pulse magnetron sputtering power supply (4), one end of a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply is grounded, the other end of the waveform oscilloscope is connected with the output end of the high-power pulse magnetron sputtering power supply (4), the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the positive and negative connection method can be determined according to the direction of an output magnetic field, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative electrode of the bias power supply (1) is connected with the sample table (12), one end of the bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), and a power supply master control switch and an external water-cooling circulation system are started;
and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10-4When Pa is needed, working gas is introduced to 0.01-10 Pa, the bias power supply (1) and the bias power waveform oscilloscope (6) are started, the bias power supply (1) can be in direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, the output bias amplitude, pulse frequency and pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is 200 kW;
the waveform synchronization matching device (8) is started, the bias power waveform oscilloscope (6) displays the waveform output by the bias power (1), the high-power pulse magnetron sputtering power waveform oscilloscope (7) displays the output waveform of the high-power pulse magnetron sputtering power (4), and the synchronous trigger signal output by the waveform synchronization matching device (8) controls the bias power (1) and the high-power pulse magnetron sputtering power (4) to work;
starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;
the high-power pulse magnetron sputtering power supply (4) is started, the technological parameters required by the high-power pulse magnetron sputtering target source (5) are adjusted through direct current glow starting pre-ionization, a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply displays the pulse waveform output by the high-power pulse magnetron sputtering power supply (4), the high-power pulse magnetron sputtering power supply (4) adopts a working mode of unipolar monopulse, unipolar multipulse, unipolar single-section deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar monopulse, bipolar multipulse, bipolar unipolar single-section deep oscillation pulse, bipolar unipolar multistage deep oscillation pulse, bipolar single-section deep oscillation pulse and bipolar multistage deep oscillation pulse, the output power is 100W-500 kW, the frequency is 0-10 kHz, the peak current is 10A-5000A, and the positive and negative pulse width is 1 Mus-3000 Mus, the working voltage is 100V-4000V, the positive and negative pulse interval is set to be 5 mus-3000 mus, the working voltage, the peak current, the positive and negative pulse width and the interval output by the high-power pulse magnetron sputtering target source (5) are selected according to the type, the size and the deposition process of the target material, stable multi-element composite plasma is generated, and the element proportion of the target material in the film is adjusted; the pulse voltage, duty ratio of each section, frequency and deep oscillation waveform of the high-power pulse magnetron sputtering power supply (4) can be independently adjusted, wherein the unipolar multi-pulse, unipolar single-section deep oscillation pulse and unipolar multi-section deep oscillation pulse can adjust the high-power starting pulse voltage amplitude and waveform mode, so that the high-power pulse magnetron sputtering target source (5) rapidly enters an abnormal glow discharge mode, the target current of the high-power pulse magnetron sputtering target source (5) is rapidly increased by temporarily increasing the pulse voltage peak value, the plasma density and ionization rate of the high-power pulse magnetron sputtering are increased, then the high-power pulse magnetron sputtering power supply (4) enters a normal low-voltage high-current discharge state of the high-power pulse magnetron sputtering, and the discharge state of the high-power pulse magnetron sputtering target source (5) can be improved by the temporarily deep oscillation mode, the influence of unstable discharge factors such as sparking and ion resorption caused by charge accumulation on the film preparation is eliminated, and the deposition rate of the film is also favorably improved; the deep oscillation pulse bias voltage can be started and started when the high-power pulse magnetron sputtering power supply (4) works, the adverse effect of ignition on plasma discharge is reduced, the deep oscillation pulse bias voltage can also be started in the middle, the plasma density is improved, the stress of film deposition is adjusted, the deep oscillation pulse bias voltage can also be started at the end stage, the smooth proceeding of the next stage discharge is facilitated, the amplitude value of the deep oscillation pulse voltage can also be adjusted to be different or periodically changed, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage and be matched with the output pulse of the bias power supply (1) in the cycle, and the bias power supply pulse waveform is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform to carry out the film deposition;
the waveform synchronous matching device (8) controls the output voltage of the bias power supply (1) and the output voltage of the high-power pulse magnetron sputtering power supply (4) to ensure that the phase difference between the two is-1000 mus, so that the effective attraction of the matrix to the metal plasma and the adjustment of ion energy are ensured, and the preparation of a pure metal film, a compound ceramic film with different element proportions, a functional film and a high-quality film with a nano multilayer or gradient structure is carried out;
the power supply (10) of the movable coil device is started, the movable coil device (9) is controlled by the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the electric arc of the electric arc ion plating target source (3) is controlled, the magnetic field generated by the movable coil device (9) is utilized to keep the electric arc plasma stably generated in the electric arc ion plating target source (3), the shape of the movable coil device and the distribution and direction of magnetic force lines of the magnetic field are utilized, the movable coil can adopt a classic 90-degree bending type, and can also adopt a linear and bending and linear combination (the magnetic force lines of the linear part are tangent and intersected with the magnetic force lines of the bending part), a linear and linear combination (the magnetic force lines of the linear part are intersected), a linear, arc and linear combination (the combination of three sections are intersected and tangent) and a typical coil structure combination such as a circular arc, a linear and circular arc combination (the tangency and the tangency among the three sections) and the like, the arc and the straight line part are determined according to the requirements of space positions and transmission paths, the large particle defect in the arc plasma is filtered and eliminated, the ablation uniformity of the target is ensured, the utilization efficiency of the target is improved, the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the composite plasma of high-power pulse magnetron sputtering and arc ion plating passes through the movable coil device (9) with higher transmission efficiency, the adjustment of the magnetic field direction and the magnetic field intensity is realized at the same time, the arc plasma and the high-power pulse magnetron sputtering plasma are guided to reach any position in the vacuum chamber (13) or the surface of a substrate with any shape on the sample table (12), the composite plasma is controlled by adjusting the number of turns of the coil, the coil spacing, the shape, the transmission path and the like of the movable coil device (9), and the loss of the composite plasma in the vacuum chamber (13) is reduced, large particle defects in arc plasma are eliminated, the problem of uneven film deposition caused by limitation of deposition positions or limitation of substrate shapes due to the layout design of a vacuum chamber space and a target source is solved, and the film is rapidly deposited; the output resistance of the rheostat device (11) is adjusted, the positive bias voltage change on the movable coil device (9) is realized, the electric field generated by the positive bias voltage can realize the attraction of electrons and residual large particles in the arc plasma, the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of composite plasma; the positive electrode and the negative electrode of a power supply (10) of the movable coil device provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, the composite plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, the surface of the matrix is reached at high transmission efficiency, the composite plasma is prevented from being lost in a vacuum chamber (13), and the rapid deposition of a film is realized;
the arc ion plating target source (3), the high-power pulse magnetron sputtering target source (5) and the movable coil device (9) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.
According to the requirements of film preparation and the related technological parameter regulation, the pure metal film, the compound ceramic film with different element proportions, the functional film and the high-quality film with nano multilayer or gradient structure are prepared.
The invention has the advantages that: a. the high-power pulse magnetron sputtering technology realizes higher ionization rate of metal particles of the target material through high-voltage low-frequency pulses without other auxiliary ionization devices, and does not generate large particle defects on low-melting-point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si); b. the arc ion plating target source can make up the limitations that the discharge of the high-power pulse magnetron sputtering target source is unstable and the high-melting point target material is difficult to ionize, and ensure the high-density continuous generation of the deposition ions; c. due to the adoption of the waveform synchronous matching device, the substrate can effectively attract ions generated by the high-power pulse magnetron sputtering target source, the suck-back effect of the high-power pulse magnetron sputtering technology on the generated ions is reduced, the film deposition rate is ensured, and the energy of the deposited ions is greatly improved; d. by adjusting the technological parameters of the high-power pulse magnetron sputtering target source and combining the technological parameters of the arc ion plating target source, the ion proportion of various elements in the composite plasma can be realized, and the deposition of films with different element proportions can be realized; e. the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by using the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the film-substrate bonding strength is improved, and the service performance of the film is improved; f. because the application limit of low-melting point pure metal (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in arc ion plating is eliminated, the defect of large particles of low-melting point elements is avoided, the addition and the flexible adjustment of the proportion of the elements in the original multi-element film preparation process can be realized, the crystal structure of the prepared film is more compact, and the mechanical property of the film can be further improved; g. by utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic force lines of a magnetic field, the movable coil can adopt a classical 90-degree bending type, and can also adopt typical coil structure combinations such as straight line and bending, bending and straight line combination (the magnetic force lines of the straight line part are tangent and intersected with the magnetic force lines of the bent part), straight line and straight line combination (the magnetic force lines of the two straight line parts are intersected), straight line, arc and straight line combination (the combination of three sections are intersected and tangent) and arc, straight line and arc combination (the tangency and the intersection among the three parts) and the like, wherein the arc and the straight line part are determined according to the requirements of spatial position and transmission path, thereby realizing the effective control of an arc plasma transmission path, clearing the large particle defects, overcoming the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology, and reducing the loss of composite plasma in the transmission process of a vacuum chamber, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved by guiding the magnetic field of the movable coil, the problem of uneven film deposition caused by deposition position limitation or matrix shape limitation caused by the layout design of the space and the target source of the vacuum chamber is solved, the film can be prepared at the optimal position of the vacuum chamber, the series resistance value of the movable coil can be adjusted by the rheostat device, the adjustment of the positive bias parameters of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, and the large particle defect in the film is eliminated; h. the pulse bias power supply eliminates the residual large particle defects and optimizes the regulation of the energy of the composite plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field, eliminates the residual large particle defects, increases the deposition speed of the film, reduces the loss of the composite plasma in a filtering device and a vacuum chamber, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, can ensure that the crystal structure and the microstructure of the film are more compact, and is favorable for further improving the use performance of the film.
The device can be combined by a single set or a plurality of sets, and combines waveform control of a waveform synchronous matching device (8) and various types of combinations of a movable coil device (9) to realize optimized matching of different waveforms and transmission path guidance of a movable coil magnetic field, overcome the deposition position limitation caused by the layout design of a vacuum chamber space and a target source, prepare pure metal films, compound ceramic films with different element proportions, functional films and films with nanometer multilayer or gradient structures at any position in the vacuum chamber, and also can adopt the single set or the plurality of sets of devices to combine the traditional direct current magnetron sputtering, the pulse magnetron sputtering, the traditional electric arc ion plating, the pulse cathode arc and the direct current bias voltage, the pulse bias voltage or the direct current pulse composite bias voltage device to realize the composite of two or more deposition modes to deposit the films, preparing pure metal film, compound ceramic film with different element proportion, functional film and high quality film with nano multilayer or gradient structure.
Drawings
FIG. 1 is a simplified assembly diagram of the moving magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition apparatus of the present invention; FIG. 2 is a 6-configuration layout of the moving coil device; FIG. 3 is a waveform synchronization matching apparatus; FIG. 4 is a high power pulsed magnetron sputtering power supply voltage waveform; FIG. 5 is a matching graph of the bias power supply pulse waveform and the integral multiple of the high power pulse magnetron sputtering unipolar single pulse waveform; FIG. 6 is a matching graph of different phase diagrams of the bias power supply pulse waveform and the high power pulse magnetron sputtering waveform; FIG. 7 is a matching graph of different pulse widths of a bias power supply pulse waveform and a high-power pulse magnetron sputtering waveform.
Detailed Description
The first embodiment is as follows: the following describes the present embodiment with reference to fig. 1 to 7, and the device used by the active magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition device of the present embodiment includes a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high power pulse magnetron sputtering power supply (4), a high power pulse magnetron sputtering target source (5), a bias power supply waveform oscilloscope (6), a high power pulse magnetron sputtering power supply waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a sample stage (12) and a vacuum chamber (13);
in the device:
a substrate workpiece to be processed is arranged on a sample table (12) in a vacuum chamber (13), an electric arc ion plating target source (3), a high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (12), the sample table (12) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (13) and are respectively connected with the negative electrode output ends of an arc power supply (2) and a high-power pulse magnetron sputtering power supply (4), one end of a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply is grounded, the other end of the waveform oscilloscope is connected with the output end of the high-power pulse magnetron sputtering power supply (4), the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the positive and negative connection method can be determined according to the direction of an output magnetic field, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative electrode of the bias power supply (1) is connected with the sample table (12), one end of the bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), and a power supply master control switch and an external water-cooling circulation system are started;
and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10-4When Pa is needed, working gas is introduced to 0.01 Pa-10Pa, a bias power supply (1) and a bias power supply waveform oscilloscope (6) are started, the bias power supply (1) can be in bias voltage of direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse, the output bias amplitude, the pulse frequency and the pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is 200 kW;
the waveform synchronization matching device (8) is started, the bias power waveform oscilloscope (6) displays the waveform output by the bias power (1), the high-power pulse magnetron sputtering power waveform oscilloscope (7) displays the output waveform of the high-power pulse magnetron sputtering power (4), and the synchronous trigger signal output by the waveform synchronization matching device (8) controls the bias power (1) and the high-power pulse magnetron sputtering power (4) to work;
starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;
the high-power pulse magnetron sputtering power supply (4) is started, the technological parameters required by the high-power pulse magnetron sputtering target source (5) are adjusted through direct current glow starting pre-ionization, a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply displays the pulse waveform output by the high-power pulse magnetron sputtering power supply (4), the high-power pulse magnetron sputtering power supply (4) adopts a working mode of unipolar monopulse, unipolar multipulse, unipolar single-section deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar monopulse, bipolar multipulse, bipolar unipolar single-section deep oscillation pulse, bipolar unipolar multistage deep oscillation pulse, bipolar single-section deep oscillation pulse and bipolar multistage deep oscillation pulse, the output power is 100W-500 kW, the frequency is 0-10 kHz, the peak current is 10A-5000A, and the positive and negative pulse width is 1 Mus-3000 Mus, the working voltage is 100V-4000V, the positive and negative pulse interval is set to be 5 mus-3000 mus, the working voltage, the peak current, the positive and negative pulse width and the interval output by the high-power pulse magnetron sputtering target source (5) are selected according to the type, the size and the deposition process of the target material, stable multi-element composite plasma is generated, and the element proportion of the target material in the film is adjusted; the pulse voltage, duty ratio of each section, frequency and deep oscillation waveform of the high-power pulse magnetron sputtering power supply (4) can be independently adjusted, wherein the unipolar multi-pulse, unipolar single-section deep oscillation pulse and unipolar multi-section deep oscillation pulse can adjust the high-power starting pulse voltage amplitude and waveform mode, so that the high-power pulse magnetron sputtering target source (5) rapidly enters an abnormal glow discharge mode, the target current of the high-power pulse magnetron sputtering target source (5) is rapidly increased by temporarily increasing the pulse voltage peak value, the plasma density and ionization rate of the high-power pulse magnetron sputtering are increased, then the high-power pulse magnetron sputtering power supply (4) enters a normal low-voltage high-current discharge state of the high-power pulse magnetron sputtering, and the discharge state of the high-power pulse magnetron sputtering target source (5) can be improved by the temporarily deep oscillation mode, the influence of unstable discharge factors such as sparking and ion resorption caused by charge accumulation on the film preparation is eliminated, and the deposition rate of the film is also favorably improved; the deep oscillation pulse bias voltage can be started and started when the high-power pulse magnetron sputtering power supply (4) works, the adverse effect of ignition on plasma discharge is reduced, the deep oscillation pulse bias voltage can also be started in the middle, the plasma density is improved, the stress of film deposition is adjusted, the deep oscillation pulse bias voltage can also be started at the end stage, the smooth proceeding of the next stage discharge is facilitated, the amplitude value of the deep oscillation pulse voltage can also be adjusted to be different or periodically changed, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage and be matched with the output pulse of the bias power supply (1) in the cycle, and the bias power supply pulse waveform is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform to carry out the film deposition;
the waveform synchronous matching device (8) controls the output voltage of the bias power supply (1) and the output voltage of the high-power pulse magnetron sputtering power supply (4) to ensure that the phase difference between the two is-1000 mus, so that the effective attraction of the matrix to the metal plasma and the adjustment of ion energy are ensured, and the preparation of a pure metal film, a compound ceramic film with different element proportions, a functional film and a high-quality film with a nano multilayer or gradient structure is carried out;
the power supply (10) of the movable coil device is started, the movable coil device (9) is controlled by the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the electric arc of the electric arc ion plating target source (3) is controlled, the magnetic field generated by the movable coil device (9) is utilized to keep the electric arc plasma stably generated in the electric arc ion plating target source (3), the shape of the movable coil device in figure 2 and the matching of the magnetic force line layout and the direction of the magnetic field are utilized, the movable coil can adopt a classic 90-degree bending type, and the movable coil can also adopt a linear and bending and linear combination (the magnetic force line of the linear part is tangent and intersected with the magnetic force line of the bending part), a linear and linear combination (the magnetic force line of the two linear parts is intersected), a combination of a straight line, an arc and a straight line (the combination of the three parts is intersected with the tangent) and a typical coil structure combination of a circular arc, a straight line and a circular arc (the three parts are tangent and the intersection) and the like, the arc and the straight line part are determined according to the requirements of space positions and transmission paths, the large particle defect in the arc plasma is filtered and eliminated, the ablation uniformity of the target is ensured, the utilization efficiency of the target is improved, the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the composite plasma passes through the movable coil device (9) with higher transmission efficiency, the adjustment of the magnetic field direction and the magnetic field intensity is realized at the same time, the arc plasma and the high-power pulse magnetron sputtering plasma are guided to reach any position in the vacuum chamber (13) or the surface of a substrate with any shape on the sample table (12), the composite plasma is controlled by adjusting the number of turns of the coil, the coil interval, the shape, the transmission path and the like of the movable coil device (9), and the loss of the composite plasma in the vacuum chamber (13) is reduced, large particle defects in arc plasma are eliminated, the problem of uneven film deposition caused by limitation of deposition positions or limitation of substrate shapes due to the layout design of a vacuum chamber space and a target source is solved, and the film is rapidly deposited; the output resistance of the rheostat device (11) is adjusted, the positive bias voltage change on the movable coil device (9) is realized, the electric field generated by the positive bias voltage can realize the attraction of electrons and residual large particles in the arc plasma, the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of composite plasma; the positive electrode and the negative electrode of a power supply (10) of the movable coil device provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, the composite plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, the surface of the matrix is reached at high transmission efficiency, the composite plasma is prevented from being lost in a vacuum chamber (13), and the rapid deposition of a film is realized;
the arc ion plating target source (3), the high-power pulse magnetron sputtering target source (5) and the movable coil device (9) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.
The output waveform of the bias power supply (1) is direct current, single pulse, direct current pulse composite, multi-pulse composite or bipolar pulse.
The output waveform of the high-power pulse magnetron sputtering power supply (4) is direct current, single pulse, direct current pulse composite or multi-pulse composite.
The arc ion plating target source (3) adopts a high-melting-point target material, a low-melting-point pure metal or multi-element alloy material and a non-metal material (such as graphite), the high-power pulse magnetron sputtering target source (5) adopts a low-melting-point pure metal (such as aluminum and tin) or multi-element alloy material (such as AlSi alloy) and a non-metal material (such as graphite and semiconductor material Si), and a single target, a plurality of targets or a composite target can be used for carrying out pure metal thin films, compound ceramic thin films with different element ratios, functional thin films, multi-element multi-layers, superlattice and high-quality thin films with nano multi-layer or gradient structures.
The working gas is argon or the mixed gas of one or more of nitrogen, acetylene, methane, silane or oxygen to prepare pure metal film, compound ceramic film with different element proportions, functional film, multi-component multi-layer, superlattice, nano multi-layer or gradient structure film.
The movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition device fully utilizes a high-power pulse magnetron sputtering target source to simultaneously generate and ionize ions, breaks through the application limit of low-melting-point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in the arc ion plating, and effectively avoids the problem of large particles generated by low-melting-point materials; meanwhile, the waveform synchronous matching device is used for controlling the negative bias and the high-power pulse magnetron sputtering technological parameters applied to the workpiece, so that the potential distribution of the plasma region of the high-power pulse magnetron sputtering target source is improved, ions generated by the high-power pulse magnetron sputtering are fully attracted to move towards the workpiece, and the problem of low film deposition efficiency caused by the ion resorption effect in the high-power pulse magnetron sputtering is effectively solved; meanwhile, the arc ion plating technology is used for generating stable and continuous metal plasmas with high ionization rate, so that the defect of unstable discharge of the high-power pulse magnetron sputtering technology is overcome, the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece is facilitated, and compound ceramic films, functional films, multi-component multi-layer films, super-lattices and films with gradient structures or pure metal films with different element ratios are prepared; a composite deposition method of movable magnetic field arc ion plating and high power pulse magnetron sputtering utilizes the shape of a movable coil device and the matching of the layout and the direction of magnetic lines of a magnetic field, the movable coil can adopt a classic 90-degree bending type, and can also adopt typical coil structure combinations such as straight lines, bending and straight line combinations (the magnetic lines of the straight line part are tangent and intersected with the magnetic lines of the bent part), straight line and straight line combinations (the magnetic lines of the two straight line parts are intersected), straight lines, circular arcs and straight line combinations (the combination of three sections are intersected and tangent) and circular arcs, straight lines and circular arcs (the tangency and intersection among the three parts) and the like, wherein the circular arcs and the straight line parts are determined according to the space position and the requirement of a transmission path (as shown in figures 1-2), thereby realizing the effective control of an arc plasma and a high power pulse magnetron sputtering plasma transmission path, the stable movement of the electric arc on the surface of the target material is ensured, continuous electric arc plasma is generated, the high-efficiency transmission of the electric arc plasma in the movable coil device is realized through the magnetic force line of the movable coil device, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, the large particle defect in the electric arc plasma is eliminated, the problems of unstable discharge and ion resorption of the high-power pulse magnetron sputtering technology are overcome, the loss of the composite plasma in the transmission process of the vacuum chamber is reduced, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved through the guidance of the movable coil magnetic field, the problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the matrix shape due to the layout design of the space and the target source of the vacuum chamber is overcome, and the preparation of the film can be realized at the optimal position of the vacuum chamber, the rheostat device can also be used for adjusting the series resistance value of the movable coil, so that the adjustment of the self positive bias parameters of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, the defect of the residual large particles is eliminated, and the deposition speed of the film is increased; the pulse bias power supply eliminates the residual large particle defects and adjusts and optimizes the energy of the arc plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field, improves the interval potential distribution of the plasma near the matrix, fully attracts the arc plasma to move towards a workpiece, and realizes the rapid deposition of the film; the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; meanwhile, the arc ion plating technology is utilized to generate stable and continuous metal plasma with high ionization rate, which is beneficial to the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece, and compound ceramic films, functional films, multi-component multi-layer films, super lattices and films with gradient structures or pure metal films with different element ratios are prepared; the film prepared by the composite deposition method of the moving magnetic field arc ion plating and the high-power pulse magnetron sputtering eliminates the defect of large particles in the film, reduces the loss of composite plasma in a filtering device and a vacuum chamber, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, optimizes the energy distribution of the arc plasma by using pulse bias, can ensure that the crystal structure and the microstructure of the film are more compact, and is beneficial to further improving the service performance of the film.
The second embodiment is as follows: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition method, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronization matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the period of the output pulse of the high-power pulse magnetron sputtering power supply (4) is integral multiple of the output pulse of the bias power supply (1), as shown in figure 5, the period of the output pulse of the high-power pulse magnetron sputtering power supply (4) is 8 times of the pulse period of the output of the bias power supply (1), the technological parameters are adjusted, the film deposition is carried out, and the multilayer structure films with different stress states, microstructures and element proportions are prepared, the rest is the same as the first embodiment.
The third concrete implementation mode: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition method, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the phases of the bias pulse waveforms output by the high-power pulse magnetron sputtering power supply (4) and the bias power supply (1) are adjustable, as shown in figure 6, when the pulse widths are the same, the output pulse waveforms of the two power supplies can be completely overlapped, partially overlapped or not overlapped, so that the reasonable matching of the two power supply pulses is selected according to the thin film deposition process, and the process parameters are adjusted, and performing film deposition to prepare the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest is the same as the first embodiment.
The fourth concrete implementation mode: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition method, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the pulse widths of the high-power pulse magnetron sputtering power supply (4) output high-power pulses and the bias power supply (1) output pulses are independently adjustable, as shown in figure 7, different pulse widths enable the output pulse waveforms of the two power supplies to cover the latter and the latter or completely coincide, the technological parameters are adjusted, the thin film deposition is carried out, and the multilayer structure thin film with different stress states, microstructures and element proportions is prepared, the rest is the same as the first embodiment.
The fifth concrete implementation mode: the present embodiment is different from the first embodiment in that the apparatus further includes: and step three, combining one or more of the traditional direct current magnetron sputtering method, the pulse magnetron sputtering method, the traditional arc ion plating method and the pulse cathode arc method, and applying a direct current bias voltage, a pulse bias voltage, a direct current pulse composite bias voltage or a bipolar pulse bias voltage device on the workpiece to perform film deposition to prepare a pure metal film, a compound ceramic film with different element ratios, a functional film and a high-quality film with a nano multilayer or gradient structure.
The sixth specific implementation mode: the difference between the embodiment and the first embodiment is that the moving magnetic field arc ion plating and the high-power pulse magnetron sputtering composite deposition method are connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and is combined with a high-voltage pulse bias power supply for ion implantation and deposition, the binding force between the film and the substrate is improved, then the third step is carried out, and the second step and the third step are repeatedly executed to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the second embodiment.
The seventh embodiment: the difference between the embodiment and the first embodiment is that the moving magnetic field arc ion plating and the high-power pulse magnetron sputtering composite deposition method are connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and is combined with a high-voltage pulse bias power supply for ion implantation and deposition, the binding force between the film and the substrate is improved, then the third step is carried out, and the second step and the third step are repeatedly executed to prepare the multilayer structure film with different stress states, microstructures and element proportions, and the rest are the same as the third embodiment.
The specific implementation mode is eight: the difference between the embodiment and the first embodiment is that the moving magnetic field arc ion plating and the high-power pulse magnetron sputtering composite deposition method are connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and is combined with a high-voltage pulse bias power supply for ion implantation and deposition, the binding force between the film and the substrate is improved, then the third step is carried out, the second step and the third step are repeatedly executed, the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the rest is the same as the fourth embodiment.
The specific implementation method nine: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is unipolar multi-pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the bias power supply pulse waveform and the high-power pulse magnetron sputtering pulse waveform are in integral multiple, different phases and different pulse widths, as shown in figures 5, 6 and 7, the process parameters are adjusted to perform thin film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The detailed implementation mode is ten: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a unipolar single-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with the integral multiple of the waveform, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameter adjustment is used for film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The concrete implementation mode eleven: the difference between the first embodiment and the second embodiment is that the arc ion plating of the movable magnetic field is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is used to adjust the output resistance, the waveform synchronization matching device (8) is used to control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a single-polarity single-segment deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse voltage can be turned on when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge and can also be turned on in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the method can be started at the end stage, which is beneficial to smooth discharge at the next stage, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage, or can be different, the deep oscillation pulse stage can occupy the whole pulse period to form a deep oscillation pulse voltage mode, and then the deep oscillation pulse voltage mode is matched with the output pulse of a bias power supply (1) with the period, and the bias power supply pulse waveform is matched with the high-power pulse magnetron sputtering pulse waveform in integral multiple, different phases and different pulse widths, as shown in fig. 5, 6 and 7, the process parameters are adjusted to carry out film deposition, so that the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other parts are the same as those of the first embodiment.
The specific implementation mode twelve: the difference between the embodiment and the first embodiment is that the arc ion plating of the movable magnetic field is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is unipolar multi-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with the integral multiple of the waveform, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameter adjustment is used for film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The specific implementation mode is thirteen: the difference between the first embodiment and the second embodiment is that the arc ion plating of the movable magnetic field is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is turned on, the movable coil device power supply (10) is turned on to adjust the movable coil device (9), the rheostat device (11) is used to adjust the output resistance, the waveform synchronization matching device (8) is used to control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a unipolar multi-section deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse bias can be turned on when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge, and can also be turned on in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the method can be started at the end stage, which is beneficial to smooth discharge at the next stage, the amplitude of each section of deep oscillation pulse voltage can be the same as the pulse stage, or can be different, the same or different amplitude of the deep oscillation pulse voltage can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or step-changed amplitude, and then the amplitude is matched with the output pulse of a bias power supply (1) with the period, and the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform, as shown in fig. 5, 6 and 7, the process parameters are adjusted, the film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other parts are the same as the first embodiment.
The specific implementation mode is fourteen: the difference between the first embodiment and the second embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled to be started simultaneously by the waveform synchronous matching device (8), the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar single pulse (as shown in figure 4), wherein the whole voltage amplitude of the end stage is beneficial to reducing the potential accumulation of the target surface, eliminating the sparking phenomenon, enabling the discharge of the next pulse to be carried out smoothly, and then is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply and the waveform of the high-power pulse magnetron sputtering pulse are integral multiples of the waveform, Matching of different phases and different pulse widths, as shown in fig. 5, 6 and 7, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.
The concrete implementation mode is fifteen: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar multi-pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the bias power supply pulse waveform is matched with the high-power pulse magnetron sputtering pulse waveform in integral multiple, different phases and different pulse widths, as shown in figures 5, 6 and 7, the process parameters are adjusted to perform thin film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The specific implementation mode is sixteen: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronization matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar unipolar single-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with the integral multiple of the waveform, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameters are adjusted to perform film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
Seventeenth embodiment: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar unipolar single-section deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse bias can be started and started when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge and can also be started in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the method can be started at the end stage, which is beneficial to smooth discharge at the next stage, the amplitude of the voltage of the deep oscillation pulse can be adjusted to be different or in-stage variation, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage, and then the deep oscillation pulse is matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the magnetron sputtering pulse waveform of the high-power pulse, as shown in fig. 5, 6 and 7, the process parameters are adjusted to carry out film deposition, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other steps are the same as those of the first embodiment.
The specific implementation mode is eighteen: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar unipolar multi-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with integral multiple times, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameters are adjusted to perform thin, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The detailed embodiment is nineteen: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar unipolar multi-section deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse bias can be started and started when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge and can also be started in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the method can be started at the end stage, which is beneficial to smooth discharge at the next stage, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage, or can be different, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or can be changed in stages, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage, and then the deep oscillation pulse is matched with the output pulse of the bias power supply (1) with the period, and the bias power supply pulse waveform and the high-power pulse magnetron sputtering pulse waveform are in integral multiple, different phases and different pulse widths, as shown in fig. 5, 6 and 7, the process parameters are adjusted, the film deposition is carried out, and the multilayer structure films with different stress states, microstructures and element proportions are prepared, and the other parts are the same as the first embodiment.
The specific implementation mode twenty: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar two-pole single-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameters are adjusted to perform thin film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
The specific implementation mode is twenty one: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar two-pole single-section deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse bias can be started and started when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge and can also be started in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the method can be started at the end stage, which is beneficial to smooth discharge at the next stage, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage or can be selected to be different, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages, and then the deep oscillation pulse voltage is matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform, as shown in fig. 5, 6 and 7, the process parameters are adjusted, the film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the other parts are the same as the first embodiment.
Specific embodiment twenty-two: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the waveform synchronous matching device (8) is used for controlling the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar two-pole multi-section deep oscillation pulse (as shown in figure 4) and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply is matched with integral multiple times, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse, as shown in figures 5, 6 and 7, the process parameter adjustment is used for film deposition, preparing a multilayer structure film with different stress states, microstructures and element ratios, and the rest is the same as the first embodiment.
Specific embodiment twenty-three: the difference between the embodiment and the first embodiment is that the movable magnetic field arc ion plating is connected with the high-power pulse magnetron sputtering composite deposition device, the arc power supply (2) is started, the movable coil device power supply (10) is started to adjust the movable coil device (9), the rheostat device (11) is used for adjusting the output resistance, the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) are controlled by the waveform synchronous matching device (8) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar two-pole multi-section deep oscillation pulse (as shown in figure 4), wherein the deep oscillation pulse bias can be started and started when the high-power pulse magnetron sputtering power supply (4) works, which is beneficial to reducing the adverse effect of ignition on plasma discharge and can also be started in the middle, which is beneficial to improving the plasma density and adjusting the stress of film deposition, the pulse width of the deep oscillation pulse voltage can be the same as that of the pulse phase or different from that of the pulse phase, the amplitude of the deep oscillation pulse voltage of each section can be the same as that of the pulse phase or different from that of the pulse phase, the same or different deep oscillation pulse voltage amplitudes can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages and matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform, as shown in fig. 5, 6 and 7, the process parameters are adjusted, and the thin film deposition is performed to prepare the multi-layer structure thin film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.
Twenty-four specific embodiments: the difference between the present embodiment and the first embodiment is that the arc ion plating of the active magnetic field is connected with the high power pulse magnetron sputtering composite deposition device, the arc power supply (2) is turned on, the power supply (10) of the active coil device is turned on to adjust the active coil device (9), the rheostat device (11) is adjusted to output resistance, the waveform synchronization matching device (8) is used to control the bias power supply (1) and the high power pulse magnetron sputtering power supply (4) to be turned on simultaneously, the output pulse of the high power pulse magnetron sputtering power supply (4) is two or more combinations of the working modes of unipolar single pulse, unipolar multi-pulse, unipolar single-segment deep oscillation pulse, unipolar multi-segment deep oscillation pulse, bipolar single pulse, bipolar multi-segment deep oscillation pulse, bipolar single-segment deep oscillation pulse, bipolar multi-segment deep oscillation pulse (as shown in figure 4), and matching the pulse waveform of the bias power supply with integral multiple, different phases and different pulse widths of the magnetron sputtering pulse waveform of the high-power pulse by matching with the output pulse of the bias power supply (1) with the period, as shown in fig. 5, 6 and 7, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element proportions, wherein the rest is the same as that of the first embodiment.

Claims (1)

1. The device is characterized by comprising a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high-power pulse magnetron sputtering power supply (4), a high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a sample table (12) and a vacuum chamber (13);
in the device:
a substrate workpiece to be processed is arranged on a sample table (12) in a vacuum chamber (13), an electric arc ion plating target source (3), a high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (12), the sample table (12) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (13) and are respectively connected with the negative electrode output ends of an arc power supply (2) and a high-power pulse magnetron sputtering power supply (4), one end of a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply is grounded, the other end of the waveform oscilloscope is connected with the output end of the high-power pulse magnetron sputtering power supply (4), the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the positive and negative connection method can be determined according to the direction of an output magnetic field, the rheostat device (11) is connected with the movable coil device (9) in series and connected into a loop of a power supply (10) of the movable coil device, the negative electrode of the bias power supply (1) is connected with the sample table (12), one end of the bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), and a power supply master control switch and an external water-cooling circulation system are started.
CN201822240062.6U 2017-12-30 2018-12-28 Moving magnetic field arc ion plating and high power pulse magnetron sputtering composite deposition device Active CN214115699U (en)

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CN2017219289968 2017-12-30
CN201721928996 2017-12-30

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