CN214991812U

CN214991812U - Vacuum deposition device combining magnetic field and lining bias straight pipe

Info

Publication number: CN214991812U
Application number: CN201822229370.9U
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 刘学申; 张新国; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2018-12-27
Publication date: 2021-12-03
Anticipated expiration: 2028-12-27

Abstract

The invention discloses a vacuum deposition device combining a combined magnetic field and a lining bias straight pipe, belongs to the technical field of surfaces, and aims to solve the problems of pollution of large particles in arc ion plating on a film, use limitation of a target material, loss of magnetic filtering arc plasma, unstable high-power pulse magnetron sputtering discharge and the like. The apparatus of the present invention comprises: bias power supply, arc ion plating target source and power supply, multistage magnetic field device and power supply, lining bias straight tube device and power supply, and moving coilThe device and the power supply, the waveform matching device, the high-power pulse magnetron sputtering target source and the power supply and the like; and (3) thin film deposition: connecting device, starting system, vacuum degree in the vacuum chamber is less than 10^‑4When Pa is needed, working gas is introduced, a film coating power supply is started, a bias power supply is used for adjusting the energy of the plasma, the multistage magnetic field device and the movable coil device are used for eliminating the large particle defect and guiding the transmission of the composite plasma, the loss in the vacuum chamber is reduced, and the preparation process parameters are set.

Description

Vacuum deposition device combining magnetic field and lining bias straight pipe

Technical Field

The invention relates to a vacuum deposition device combining a combined magnetic field and a lining bias straight pipe, belonging to the technical field of surfaces.

Background

In the process of preparing the film by arc ion plating, the current density of arc spots is as high as 2.5-5 multiplied by 10¹⁰A/m²The molten liquid metal, which is caused to appear at the location of the arc spot on the target surface, is sprayed out in the form of droplets under the action of the local plasma pressure, adheres to the surface of the film or is embedded in the film to form "large particle" (Macroparticles) defects (Boxman R L, gold limit s. Macroparticle contact in lateral coatings: generation, transport and control J]Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, the number of electrons reaching the surface of a large particle per unit time is larger than that of ions because the moving speed of electrons is much larger than that of ions, so that the large particle is negatively charged. With respect to films of micron or submicron thickness, large particle defects of 0.1-10 microns in size, as well as PM2.5, can be a serious detriment to the quality and performance of the film. With the increasing application of thin film materials and thin film technologyIn general, whether the problem of large particle defect is solved or not becomes the bottleneck of further development of the arc ion plating method, and the application of the arc ion plating method in preparation of new-generation thin film materials is severely restricted.

The magnetron sputtering technology adopts a direct current power supply mode at first, compared with an arc ion plating method, the magnetron sputtering technology has no large particle defects, can realize low-temperature sputtering deposition of various materials, but has very low ionization rate of sputtering materials, and the power density of a sputtering target is 50W/cm²The film deposition cannot obtain enough ion number, so that the deposition efficiency is very low, the target poisoning phenomenon is easy to generate, and the energy of the ions is low, so that the film tissue is not compact enough (Changshai, hysteresis effect research in the reactive magnetron sputtering process [ J]Vacuum and low temperature, 2003, 9(4): 7-10.). In 1999, V. Kouznetsov et al, university of forest-Xuezhei, Sweden (Kouznetsov V, Mac a k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetic neutron monitoring devices high target power dynamics [ J]Surf Coat Tech, 1999, 122(2-3): 290-. Compared with the common direct current magnetron sputtering, the peak power of the magnetron sputtering is improved by 100 times and is about 1000-3000W/cm²Density of plasma up to 10¹⁸m^-3The ion density of the central area of the target can reach 10¹⁹m^-3And the ionization rate of the sputtering material can reach more than 90 percent at the same time, and the sputtering material does not contain large particle defects in the existing arc ion plating method with the highest ionization rate. After 2008, research on high-power pulse magnetron sputtering technology (Lixiph. high-power composite pulse magnetron sputtering plasma characteristics and TiN film preparation [ D ] was also started in various colleges and universities in China]Development and study of high-power pulsed magnetron sputtering technique [ J ] of Wuzhong, Zhutao, Chunchui, Tiankuibo, Yangshijing, Lixiping, Haerbin university of industry 2008]Vacuum, 2009, 46(3): 18-22. and muzong, wang chun, jali, dong rushing. dc power supply coupled high power pulse unbalanced magnetron sputtering ionization characteristics [ J]The Proc of Physics 2011, 60(1): 422-. Although there are also scholars who improve the application of high power pulse magnetron sputtering, such as the ion implantation and deposition method (publication No. CN101838795A, published date: 9/2010 and 22 days) of the chinese patent, which fully utilizes the advantages of high power pulse magnetron sputtering by using a high voltage and pulse synchronization matching device to realize the breakthrough of the high power pulse magnetron sputtering technology in the field of ion implantation, due to the limitation of a high voltage power supply, the density of deposited ions reaching the surface of a substrate cannot be too high, otherwise the high voltage power supply is damaged, and the grape dental university Ferreira et al (Ferreira F, Serra R, Oliveira J C, caveiro a, Effect of peak target power on the performance of Cr thin ms sputtered by HiPIMS in depletion semiconductors (DOMS) model [ J]Surf Coat Tech, 2014, 258: 249-.

At present, in order to solve the problem that the arc ion plating method is prone to generate large grain defects when using pure metal or multi-element alloy materials with low melting points, magnetic filtration is mainly adopted to filter out large grains, such as the ceramic material prepared by the Plasma immersion ion implantation device (publication number: CN1150180, published date: 1997 5, 21) in Chinese patent, and the ceramic material prepared by the method is mainly prepared by filtering large grains of pulsed cathode arc by using a 90-degree magnetic filtration bent pipe, American scholars et al (Anders S, Anders A, Dickinson M R, Macgill R A, Brown I G. S-shaped magnetic macroparametric filter for catalytic deposition [ J ]. IEEE Trans Plasma Sci, 1997, 25(4): 670-674.) and Zhan-Nannan university (Zhang Jane Jue, Wu-Shi et al. magnetic filtration Plasma Weiwei et al. the influence of deposition conditions on the non-ferrous metal texture film in Zhan Yu Ju, Zhang Weiwei et al. magnetic filtration Plasma preparation film, 1264- & 1268.) in the article, "S" magnetic filter elbows were made to filter large particles of cathode arcs, and magnetic filtration of Twist filters proposed by American scholars et al (Anders A, MacGill R A. Twist filters for the removal of macro particles from the cathode plasma [ J ]. Surf Coat Tech, 2000, 133- & 134: 96-100.), and Dehua at Shanghai traffic university proposed adjustable open single-and dual-channel electromagnetic coil filters (D; Shanghai traffic university, 2009), which, although effective in filtering and eliminating large particles, have a significant loss in plasma transport efficiency and greatly reduced ion flux density. On the basis of filtering large particles and guaranteeing the efficiency, a straight tube filtering method is proposed in a vacuum cathode arc straight tube filter (publication number: CN1632905, published: 6/29/2005) in China patent, but the filtering effect is reduced. In summary, relevant researchers found by comparing various magnetic filtration methods (Anders A. Applicheches to red catalytic array of macro-and nanoparticles: a Review [ J ]. Surf Coat Tech, 1999, 120-. In addition, a bias electric field suppression method is adopted on the substrate, and when negative bias is applied on the substrate, the electric field can generate repulsion action on negatively charged large particles, so that the generation of large particle defects on the surface of the thin film is reduced. Olbrich et al (Olbrich W, Fessmann J, Kampschult G, Ebberenk J. Improved control of TiN coating properties using a pulsed bias with a pulsed bias [ J ]. Surf COAT Tech, 1991, 49(1-3): 258) 262. and Fessmann J, Olbrich W, Kampschult G, Ebberenk J. capacitive deposition of TiN and Zr (C, N) at low substrate pulsed bias [ J ]. Mat Sci Eng A, 1991, 140: 830.) use of pulsed bias instead of conventional DC bias to form a new technology of pulsed bias ion plating, which not only greatly reduces the surface temperature of large particles but also overcomes the high temperature of the substrate, the internal stress of the film is large, and the like. The theory of influence of bias voltage on the surface morphology of an arc ion plating film [ J ]. Metallurgical Proc, 2003, 39(5): 510) is deeply analyzed aiming at the mechanism of large particle defect reduction caused by pulse bias voltage, and the sheath movement characteristic of arc plasma can be improved, the number of large particle defects on the surface of the film can be reduced, the quality of the film can be improved, the method is widely applied to actual production, but the large particle defects can not be completely eliminated. The domestic scholars (Weiyongqiang, Zongya, Jiangqiang, Wenxianghua, Chengjibifiao, the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight pipe, the publication number is CN103276362A, the publication date is 2013, 9 and 4 days) provide the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight pipe, and the multistage magnetic field filtering device is used for eliminating the large particle defect and improving the transmission efficiency of the plasma; the scholars also adopt a double-layer baffle device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride films disposed by a new shield disposed in the deposition [ J ] Appl Surf Sci, 2011, 257(13): 5694-. There are also researchers (Zhang, Hou Junda, Liu Shi, Zhang Ying Smart, magnetic filtration cathode arc plasma source and its film preparation [ J ]. Chinese surface engineering, 2002, 02): 11-15+ 20-12.) refer to the method of Bilek plate (Bilek M M M, Yin Y, McKenzie D R, Mille W I A M W I. Ion transport mechanism in a Filtered Catalytic Vacuum Arc (FCVA) system [ C ]. Proceedings of the channels and electric Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIII International Symposium on, 1996: 962:. 966), and positive bias is applied to the bend of the 90 degree bend magnetic filter device to improve the plasma transmission efficiency.

In order to solve the problem of difficult ionization in the aspect of using high-melting-point targets by Magnetron sputtering technology, expand the respective limitations of the existing arc ion plating and Magnetron sputtering methods in the aspect of using targets, fully utilize high-power pulse Magnetron sputtering to sputter and deposit low-melting-point metal materials (such as aluminum and tin), multi-element alloy materials (such as aluminum-silicon alloy), non-metal materials (such as graphite) and semiconductor materials (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R.D. Pilkton, R.D. Arnell. Advanced Coatings Through Pulsed magnetic sputtering and sputtering. Surface Engineering, 2004, 20(3): 157 and 162. and heel U, Krempel-Hesse J, Szzyrtbki J, Teschner G, Bruch J, Br ä uer G. and J. cathode J.: plasma J. (Vacuum J.), 2000, 59 (2-3): 424 and 430), and simultaneously utilizes the advantages of the arc ion plating in the aspects of high melting point and difficult ionization target material, and combines the elimination of large particles by a magnetic filtering device and the guarantee of plasma transmission efficiency to realize the preparation of films with various materials, component proportions and structures.

Disclosure of Invention

The invention aims to solve the problems of low ionization rate and film deposition efficiency, use limitation of high-melting point target materials, unstable discharge and ion resorption of the conventional high-power pulse magnetron sputtering technology, the problems of high-particle defect of the conventional arc ion plating method adopting the high-melting point target materials, low-melting point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) as the target materials, low arc plasma transmission efficiency caused by the bending magnetic filtration technology, use and uniform ablation limitation of target material elements, film deposition density and defect problems, deposition position limitation caused by the design of vacuum chamber space and target source layout, workpiece shape limitation, film component pollution caused by secondary sputtering of residues of different target materials in a multi-stage magnetic field device and the like, and the problems of low-melting point pure metals (such as aluminum, tin, copper, nickel, and the like, Tin) or multi-element alloy material (such as AlSi alloy) and non-metal material (such as graphite and semiconductor material Si) are used as a target material of high-power pulse magnetron sputtering, then an arc ion plating method is utilized to realize that the high-melting-point difficult-to-ionize target material generates continuous stable and high-ionization-rate plasma, the large particle defect contained in the arc plasma is eliminated by combining a multi-stage magnetic field filtering method, the constraint of the shape of a lining bias straight tube device and the composite action of bias electric field attraction, the arc plasma is ensured to pass through the lining bias straight tube device and the multi-stage magnetic field filtering device with higher transmission efficiency, the large particle defect contained in the arc plasma transmitted from the multi-stage magnetic field device and the lining bias straight tube device is eliminated by utilizing the composite action of magnetic field constraint of a movable coil device and the self bias electric field attraction, and the composite action of the high-power pulse magnetron sputtering and the arc ion plating in a vacuum chamber is controlled by utilizing the movable coil device The transmission direction in the vacuum chamber, the control and regulation of the film deposition and the film components on the surface of a substrate workpiece at any position in the vacuum chamber are realized, the loss of composite plasma in the vacuum chamber is reduced, the problem of uneven film deposition caused by the position limitation of the vacuum chamber and a target source or the shape limitation of the substrate is solved, the large particle defect possibly remained in the arc plasma transmitted from a multistage magnetic field device and a lining bias straight tube device is thoroughly eliminated, the ion energy is regulated on the surface of the workpiece under the condition of applying negative bias, the large particle defect in the arc plasma is eliminated by utilizing the bias electric field inhibition effect of the surface of the substrate, a continuous and compact high-quality film is prepared, the control of adding the target element content in the film is realized, the production cost of using an alloy target is reduced, the transmission efficiency of the plasma is improved, the deposition speed of the film is increased, and the microstructure of the film caused by the large particle defect is reduced or even eliminated, The adverse effects of continuous compact deposition and service performance, a vacuum deposition device combining a magnetic field and a lining bias straight pipe is provided.

The device used by the invention comprises a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high-power pulse magnetron sputtering power supply (4), a high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a multistage magnetic field device (12), a multistage magnetic field device power supply (13), a lining bias straight tube device (14), a lining bias power supply (15), a sample table (16) and a vacuum chamber (17);

in the device:

a substrate workpiece to be processed is arranged on a sample table (16) in a vacuum chamber (17), an electric arc ion plating target source (3), a high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (17) are mutually insulated, the workpiece is arranged on the sample table (16), the sample table (16) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (17) and are respectively connected with the negative electrode output ends of an arc power supply (2) and a high-power pulse magnetron sputtering power supply (4), one end of a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply is grounded, the other end of the waveform oscilloscope is connected with the output end of the high-power pulse magnetron sputtering power supply (4), the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the positive and negative connection method can be determined according to the direction of an output magnetic field, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative electrode of the bias power supply (1) is connected with the sample table (16), one end of a bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), each stage of magnetic fields of the multistage magnetic field device (12) are connected with each output end of the multistage magnetic field device power supply (13), the positive and negative connection method can be determined according to the direction of the output magnetic field, the lining bias straight tube device (14) is connected with the positive output end of the lining bias power supply (15), and a power supply total control switch and an external water-cooling circulation system are started;

and (3) thin film deposition: the vacuum chamber (17) is vacuumized until the vacuum degree in the vacuum chamber (17) is less than 10^-4When Pa is needed, working gas is introduced to 0.01-10 Pa, the bias power supply (1) and the bias power waveform oscilloscope (6) are started, the bias power supply (1) can be in direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, the output bias amplitude, pulse frequency and pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is 200 kW;

the waveform synchronization matching device (8) is started, a bias power waveform oscilloscope (6) is used for displaying the waveform output by the bias power (1), a high-power pulse magnetron sputtering power waveform oscilloscope (7) is used for displaying the output waveform of the high-power pulse magnetron sputtering power (4), and the bias power (1) and the high-power pulse magnetron sputtering power (4) are controlled to work through a synchronization trigger signal output by the waveform synchronization matching device (8);

starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;

the power supply (13) of the multi-stage magnetic field device is turned on, the multi-stage magnetic field device (12) is adjusted through the multi-stage magnetic field device power supply (13), arc plasma is kept to be stably generated in the arc ion plating target source (3) and large particle defects are filtered and eliminated, the ablation uniformity of the target is guaranteed, the utilization efficiency of the target is improved, the arc plasma passes through the multi-stage magnetic field device (12) with high transmission efficiency, the multi-stage magnetic field device (12) adopts a purple copper wire with an insulated surface, the diameter and the number of turns of the wire are determined according to passing current and magnetic field intensity, the multi-stage magnetic field device power supply (13) supplies power to each stage of magnetic field respectively and independently, independent adjustment of each stage of magnetic field is achieved, and after the structure of the device is determined, the direction and the intensity of each stage of magnetic field output by the multi-stage magnetic field device power supply (13) are adjusted through output current of the multi-stage magnetic field device power supply (13);

the lining bias straight pipe device (14) can be matched with the multistage magnetic field device (12) to design the inner diameter of the straight pipeDThe outer diameter of the arc ion plating target source (3) is larger than the inner diameter of the multistage magnetic field device (12), the outer diameter of the arc ion plating target source is smaller than the inner diameter of the multistage magnetic field device (12), the arc ion plating target source and the multistage magnetic field device (12) are movably and insulatively assembled together, and the lining bias straight tube device (14) can be detached, cleaned and installed in time according to the surface pollution degree, so that the problems that the inner wall of the tube of the multistage magnetic field device (12) is polluted and is difficult to clean in a lining-plate-free state are solved, and the pollution of thin film components caused by secondary sputtering of pollutants on the inner wall surface of the multistage magnetic field device after the target material is replaced is effectively avoided; straight tube length of liner bias straight tube device (14)HThe length of the device is the same as that of the multistage magnetic field device (12), and the configuration scheme of the lining bias straight tube device (14) is selected according to different target materials and process parameters, so that the effect of removing large particles by utilizing self shape constraint is realized;

the materials of the multistage magnetic field device (12) and the lining bias straight tube device (14) are selected from 304 stainless steel materials which are nonmagnetic and resistant to cleaning, the length, the inner diameter, the outer diameter, the thickness, the number of turns of a magnetic field and the direction of the multistage magnetic field device (12) are determined according to the diameter, the cooling distance and the transmission distance of a target material, the outer diameter and the inner diameter of the straight tube are determined by the lining bias straight tube device (14) according to the inner diameter of the multistage magnetic field device (12) and the outer diameter of the arc ion plating target source (3), the straight tube is processed according to actual design parameters by selecting proper thickness according to the requirements of the length and the rigidity;

the lining bias power supply (15) is started, the lining bias straight pipe device (14) keeps direct current, single pulse, multiple pulses, direct current pulse composite or bipolar pulse bias, wherein the single pulse, multiple pulses or bipolar pulse bias can adjust the pulse frequency, the pulse width and the pulse type, the adjustment of the output voltage ensures that the lining bias straight pipe device (14) attracts large particles, the deposited ions are repelled, the loss of the arc plasma in the pipe transmission process is reduced, the large particle defect of the arc plasma is reduced or even eliminated, the transmission efficiency of the arc plasma and the deposition speed of a thin film are improved, the voltage parameter of the lining bias power supply (15) is-200 to +200V, and the lining bias power supply is a direct current, single pulse, multiple pulses, direct current pulse composite or bipolar pulse power supply, wherein the pulse type can adjust the pulse frequency, The pulse width and the pulse type generate periodic or continuous and stable attraction to large particle defects in the deposition process, thereby greatly reducing the probability that large particles pass through the multistage magnetic field device (12) and the lining bias straight pipe device (14);

the high-power pulse magnetron sputtering power supply (4) is started, the technological parameters required by the high-power pulse magnetron sputtering target source (5) are adjusted through direct current glow starting pre-ionization, a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply displays the pulse waveform output by the high-power pulse magnetron sputtering power supply (4), the high-power pulse magnetron sputtering power supply (4) adopts a working mode of unipolar monopulse, unipolar multipulse, unipolar single-section deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar monopulse, bipolar multipulse, bipolar unipolar single-section deep oscillation pulse, bipolar unipolar multistage deep oscillation pulse, bipolar single-section deep oscillation pulse and bipolar multistage deep oscillation pulse, the output power is 100W-500 kW, the frequency is 0-10 kHz, the peak current is 10A-5000A, and the positive and negative pulse width is 1 Mus-3000 Mus, the working voltage is 100V-4000V, the positive and negative pulse interval is set to be 5 mus-3000 mus, the working voltage, the peak current, the positive and negative pulse width and the interval output by the high-power pulse magnetron sputtering target source (5) are selected according to the type, the size and the deposition process of the target material, stable multi-element composite plasma is generated, and the element proportion of the target material in the film is adjusted; the pulse voltage, duty ratio of each section, frequency and deep oscillation waveform of the high-power pulse magnetron sputtering power supply (4) can be independently adjusted, wherein the unipolar multi-pulse, unipolar single-section deep oscillation pulse and unipolar multi-section deep oscillation pulse can adjust the high-power starting pulse voltage amplitude and waveform mode, so that the high-power pulse magnetron sputtering target source (5) rapidly enters an abnormal glow discharge mode, the target current of the high-power pulse magnetron sputtering target source (5) is rapidly increased by temporarily increasing the pulse voltage peak value, the plasma density and ionization rate of the high-power pulse magnetron sputtering are increased, then the high-power pulse magnetron sputtering power supply (4) enters a normal low-voltage high-current discharge state of the high-power pulse magnetron sputtering, and the discharge state of the high-power pulse magnetron sputtering target source (5) can be improved by the temporarily deep oscillation mode, the influence of unstable discharge factors such as sparking and ion resorption caused by charge accumulation on the film preparation is eliminated, and the deposition rate of the film is also favorably improved; the deep oscillation pulse bias voltage can be started and started when the high-power pulse magnetron sputtering power supply (4) works, the adverse effect of ignition on plasma discharge is reduced, the deep oscillation pulse bias voltage can also be started in the middle, the plasma density is improved, the stress of film deposition is adjusted, the deep oscillation pulse bias voltage can also be started at the end stage, the smooth proceeding of the next stage discharge is facilitated, the amplitude value of the deep oscillation pulse voltage can also be adjusted to be different or periodically changed, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage and be matched with the output pulse of the bias power supply (1) in the cycle, and the bias power supply pulse waveform is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform to carry out the film deposition;

the waveform synchronous matching device (8) controls the output voltage of the bias power supply (1) and the output voltage of the high-power pulse magnetron sputtering power supply (4) to ensure that the phase difference between the two is-1000 mus, so that the effective attraction of the matrix to the metal plasma and the adjustment of ion energy are ensured, and the preparation of a pure metal film, a compound ceramic film with different element proportions, a functional film and a high-quality film with a nano multilayer or gradient structure is carried out;

the power supply (10) of the movable coil device is started, the movable coil device (9) is adjusted through the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the magnetic field generated by the movable coil device (9) is utilized to control the transmission path of the arc plasma transmitted from the multistage magnetic field device (12) and the lining bias straight tube device (14), the shape of the movable coil device and the layout and direction of magnetic lines of force of the magnetic field are utilized, the movable coil can adopt the classic 90-degree bending type, and can also adopt the linear and bending, bending and linear combination (the magnetic lines of force of the linear part are tangent and intersected with the magnetic lines of force of the bending part), the linear and linear combination (the intersection of the magnetic lines of the two linear parts), the combination of the linear, the circular arc and the linear (the combination of the three sections are intersected and tangent) and the combination of the circular arc, the linear and the circular arc (the tangency and the intersection of the three parts) and other typical coil structure combinations, the arc and the straight line part are determined according to the requirements of space positions and transmission paths, the separation from large particle defects is realized, the arc and the straight line parts reach the surface of a substrate with higher transmission efficiency, the problem of uneven film deposition caused by the limitation of deposition positions or the limitation of the shape of the substrate due to the space of a vacuum chamber and the layout design of a target source is solved, the rapid deposition of a film is carried out, the large particle defects in arc plasma are filtered and eliminated by a multi-stage magnetic field device (12), the ablation uniformity of the target material is ensured, the utilization efficiency of the target material is improved, the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the composite plasma passes through a movable coil device (9) with higher transmission efficiency, the adjustment of the magnetic field direction and the magnetic field intensity is realized, and the composite plasma and the high-power pulse magnetron sputtering plasma are guided to reach any position in the vacuum chamber (17) or any shape of the substrate surface on a sample table (16) The number of turns of the coil, the distance between the coils, the shape, the transmission path and the like of the movable coil device (9) are adjusted to control the composite plasma, reduce the loss of the composite plasma in the vacuum chamber (17), eliminate the large particle defect in the arc plasma and carry out the rapid deposition of the film; the rheostat device (11) adjusts output resistance to realize positive bias voltage change on the movable coil device (9), an electric field generated by the positive bias voltage can realize attraction of electrons and residual large particles in the arc plasma, so that the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of composite plasma; the positive and negative electrodes of the movable coil device power supply (10) provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, the composite plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, meanwhile, the surface of the matrix is reached with high transmission efficiency, the loss of arc plasma in the vacuum chamber (17) is avoided, and the rapid deposition of the film is realized;

the arc ion plating target source (3), the high-power pulse magnetron sputtering target source (5), the multi-stage magnetic field device (12) and the movable coil device (9) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.

According to the preparation requirement of the film, relevant process parameters are adjusted to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano multilayer or gradient structures.

The invention has the advantages that: a. the high-power pulse magnetron sputtering technology realizes higher ionization rate of metal particles of the target material through high-voltage low-frequency pulses without other auxiliary ionization devices, and does not generate large particle defects on low-melting-point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si); b. the arc ion plating target source can make up the limitations that the discharge of the high-power pulse magnetron sputtering target source is unstable and the high-melting point target material is difficult to ionize, and ensure the high-density continuous generation of the deposition ions; c. due to the adoption of the waveform synchronous matching device, the substrate can effectively attract ions generated by the high-power pulse magnetron sputtering target source, the suck-back effect of the high-power pulse magnetron sputtering technology on the generated ions is reduced, the film deposition rate is ensured, and the energy of the deposited ions is greatly improved; d. by adjusting the technological parameters of the high-power pulse magnetron sputtering target source and combining the technological parameters of the arc ion plating target source, the ion proportion of various elements in the composite plasma can be realized, and the deposition of films with different element proportions can be realized; e. the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by using the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the film-substrate bonding strength is improved, and the service performance of the film is improved; f. because the application limit of low-melting point pure metal (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in arc ion plating is eliminated, the defect of large particles of low-melting point elements is avoided, the addition and the flexible adjustment of the proportion of the elements in the original multi-element film preparation process can be realized, the crystal structure of the prepared film is more compact, and the mechanical property of the film can be further improved; g. by utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic lines of a magnetic field, the movable coil can adopt a classic 90-degree bending type, and can also adopt typical coil structure combinations such as straight line and bending, bending and straight line combination (the magnetic lines of straight line parts are tangent and intersected with the magnetic lines of bent parts), straight line and straight line combination (the magnetic lines of two straight line parts are intersected), straight line, arc and straight line combination (the combination of three sections are intersected and tangent) and arc, straight line and arc combination (the tangency and the intersection among the three parts), wherein the arc and the straight line parts are determined according to the requirements of spatial position and transmission path, the effective control of an arc plasma transmission path is realized, the large particle defect remained in a multistage magnetic field device and a lining bias device is further eliminated, and the problems of unstable discharge and ion suck-back of a high-power pulse magnetron sputtering technology are solved, the loss of the composite plasma in the transmission process of the vacuum chamber is reduced, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved by guiding the magnetic field of the movable coil, the problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the matrix shape due to the space and the target source layout design of the vacuum chamber is solved, the film can be prepared at the optimal position of the vacuum chamber, the series resistance value of the movable coil can be adjusted by the rheostat device, the adjustment of the positive bias parameter of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, the defect of residual large particles is eliminated, and the deposition speed of the film is increased; h. the multistage magnetic field filtering device can ensure the stable movement of the electric arc on the surface of the target through the constraint of the magnetic field to generate continuous electric arc plasma, the high-efficiency transmission of the electric arc plasma in the multistage magnetic field device is realized through the magnetic lines of force of the multistage magnetic field, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, and the large particle defect in the electric arc plasma is further reduced or even eliminated; i. the lining bias straight tube device can continuously or periodically effectively attract large particles and continuously or periodically repel deposited ions by applying a positive bias compounded by direct current, pulse or direct current pulse, and can reduce the loss of plasma in the transmission process in the tube by bipolar pulse oscillation of the positive bias and the negative bias, thereby further improving the transmission efficiency of arc plasma and the deposition speed of a film; j. the lining bias straight tube device determines the outer diameter and the inner diameter of a straight tube according to the inner diameter of the multistage magnetic field device and the outer diameter of an electric arc ion plating target source, the straight tube selects proper thickness according to the length and rigidity requirements, the large particle defect in electric arc plasma is eliminated by limiting the motion path of the large particle defect through the shape of the straight tube, the restraint and removal effect on the large particle defect is realized, the lining bias straight tube device is flexibly disassembled and is convenient to clean, the problem that the inner wall of the pipe of the multistage magnetic field device is polluted and cleaned in a no-lining-plate state is solved, and the pollution of thin film components caused by secondary sputtering of different target materials on pollutants on the inner wall of the multistage magnetic field device after the target materials are replaced can be effectively avoided; k. the pulse bias power supply eliminates the residual large particle defects and optimizes the regulation of the composite plasma energy by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field; the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; the film prepared by the vacuum deposition device combining the combined magnetic field and the lining bias straight pipe eliminates the defect of large particles in the film, reduces the loss of composite plasma in a filtering device and a vacuum chamber, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, can ensure that the crystal structure and microstructure of the film are more compact, and is beneficial to further improving the use performance of the film.

A vacuum deposition device combining a combined magnetic field and a lining bias straight tube can be combined by a single set or multiple sets, and is combined with waveform control of a waveform synchronous matching device (8), multiple types of combinations of a multi-stage magnetic field device (12), a lining bias straight tube device (14) and a movable coil device (9) to realize optimized matching of different waveforms and transmission path guidance of the multi-stage magnetic field and the movable coil magnetic field, and prepare pure metal films, compound ceramic films with different element proportions, functional films and films with nanometer multilayer or gradient structures at any position in a vacuum chamber, or can adopt the single set or multiple sets of the device and combine one or more than two methods of traditional direct current magnetron sputtering, pulse magnetron sputtering, traditional electric arc ion plating and pulse cathode arc, and then adopt direct current bias, pulse bias or direct current pulse composite bias, the film deposition is carried out by compounding two or more deposition modes, and the pure metal film, the compound ceramic film with different element ratios, the functional film and the high-quality film with a nano multilayer or gradient structure are prepared.

Drawings

FIG. 1 is a simplified assembly diagram of a vacuum deposition apparatus incorporating a combination magnetic field and a liner bias straight tube according to the present invention; FIG. 2 is a 6-configuration layout of the moving coil device; FIG. 3 is a schematic diagram of the liner bias tube apparatus; FIG. 4 is a waveform synchronization matching apparatus; FIG. 5 is a high power pulsed magnetron sputtering power supply voltage waveform; FIG. 6 is a matching graph of the bias power supply pulse waveform and the integral multiple of the high power pulse magnetron sputtering unipolar single pulse waveform; FIG. 7 is a graph showing the matching of the different phases of the bias power supply pulse waveform and the high power pulse magnetron sputtering waveform; FIG. 8 is a matching graph of different pulse widths of a bias power pulse waveform and a high power pulse magnetron sputtering waveform.

Detailed Description

The first embodiment is as follows: the following describes the present embodiment with reference to fig. 1 to 8, and the apparatus used in the vacuum deposition apparatus combining a magnetic field and a liner bias straight tube in the present embodiment includes a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high power pulse magnetron sputtering power supply (4), a high power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a high power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronization matching apparatus (8), a movable coil apparatus (9), a movable coil apparatus power supply (10), a varistor apparatus (11), a multi-stage magnetic field apparatus (12), a multi-stage magnetic field apparatus power supply (13), a liner bias straight tube apparatus (14), a liner bias power supply (15), a sample stage (16) and a vacuum chamber (17);

in the device:

the power supply (10) of the movable coil device is started, the movable coil device (9) is adjusted through the power supply (10) of the movable coil device, the input current of the movable coil device (9) is adjusted, the magnetic field generated by the movable coil device (9) is utilized to control the transmission path of the arc plasma transmitted from the multistage magnetic field device (12) and the lining bias straight tube device (14), the shape of the movable coil device and the layout and direction of magnetic lines of force of the magnetic field are utilized, the movable coil can adopt the classic 90-degree bending type, and can also adopt the linear and bending, bending and linear combination (the magnetic lines of force of the linear part are tangent and intersected with the magnetic lines of force of the bending part), the linear and linear combination (the intersection of the magnetic lines of the two linear parts), the combination of the linear, the circular arc and the linear (the combination of the three sections are intersected and tangent) and the combination of the circular arc, the linear and the circular arc (the tangency and the intersection of the three parts) and other typical coil structure combinations, the arc and the straight line part are determined according to the requirements of space position and transmission path (as shown in figures 1 and 2), the separation from large particle defects is realized, the arc and the straight line part reach the surface of a substrate with higher transmission efficiency, the problem of uneven film deposition caused by the limitation of deposition position or the limitation of substrate shape caused by the layout design of vacuum chamber space and target source is solved, the rapid film deposition is carried out, the large particle defects in the arc plasma are filtered and eliminated by a multi-stage magnetic field device (12) and a lining bias straight tube device (14), the ablation uniformity of the target is ensured, the utilization efficiency of the target is improved, the problems of unstable discharge and ion resorption in the high-power pulse magnetron sputtering technology are solved, the arc plasma passes through a movable coil device (9) with higher transmission efficiency, and the adjustment of the magnetic field direction and the magnetic field intensity is realized at the same time, guiding the arc plasma and the high-power pulse magnetron sputtering plasma to reach any position in a vacuum chamber (17) or the surface of a substrate with any shape on a sample table (16), and adjusting the number of turns of a coil, the distance between the coils, the shape, a transmission path and the like of a movable coil device (9) to control the composite plasma, reduce the loss of the composite plasma in the vacuum chamber (17), eliminate the large-particle defect in the arc plasma and perform rapid deposition of a film; the rheostat device (11) adjusts output resistance to realize positive bias voltage change on the movable coil device (9), an electric field generated by the positive bias voltage can realize attraction of electrons and residual large particles in the arc plasma, so that the ion number of the arc plasma output in the movable coil device (9) is increased, the transmission efficiency of the arc plasma in the movable coil device (9) is improved, and the defect of the residual large particles is eliminated; the movable coil device (9) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (9), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of arc plasma; the positive and negative electrodes of the movable coil device power supply (10) provide proper current for the movable coil device (9) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (9) are ensured, arc plasma is transmitted according to the path set by the movable coil device (9), the residual large particles are removed, meanwhile, the surface of a matrix is reached with high transmission efficiency, the loss of the arc plasma in the vacuum chamber (17) is avoided, and the rapid deposition of a film is realized;

The output waveform of the bias power supply (1) is direct current, single pulse, direct current pulse composite, multi-pulse composite or bipolar pulse.

The output direct current of the arc power supply (2), single pulse, direct current pulse composite or multi-pulse composite.

The arc ion plating target source (3) adopts a high-melting-point difficult-to-ionize target material, a low-melting-point pure metal or multi-element alloy material and a non-metal material (such as graphite), the high-power pulse magnetron sputtering target source (5) adopts a low-melting-point pure metal (such as aluminum and tin) or multi-element alloy material (such as AlSi alloy) and a non-metal material (such as graphite and semiconductor material Si), and a single target, a plurality of targets or a composite target can be used for carrying out pure metal thin films, compound ceramic thin films with different element ratios, functional thin films, multi-element multi-layer, superlattice and high-quality thin films with nano multi-layer or gradient structures.

The working gas is argon or the mixed gas of one or more of nitrogen, acetylene, methane, silane or oxygen to prepare pure metal film, compound ceramic film with different element proportions, functional film, multi-component multi-layer, superlattice, nano multi-layer or gradient structure film.

A vacuum deposition device combining a magnetic field and a lining bias straight pipe is disclosed, which fully utilizes a sputtering target source in high-power pulse magnetron sputtering to simultaneously generate and ionize ions, breaks through the application limit of low-melting-point pure metals (such as aluminum and tin) or multi-element alloy materials (such as AlSi alloy) and non-metal materials (such as graphite and semiconductor material Si) in arc ion plating, and effectively avoids the problem of large particles generated by low-melting-point materials; meanwhile, the waveform synchronous matching device is used for controlling the negative bias and the high-power pulse magnetron sputtering technological parameters applied to the workpiece, so that the potential distribution of the plasma region of the high-power pulse magnetron sputtering target source is improved, ions generated by the high-power pulse magnetron sputtering are fully attracted to move towards the workpiece, and the problem of low film deposition efficiency caused by the ion resorption effect in the high-power pulse magnetron sputtering is effectively solved; meanwhile, the arc ion plating technology is used for generating stable and continuous metal plasmas with high ionization rate, so that the defect of unstable discharge of the high-power pulse magnetron sputtering technology is overcome, the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece is facilitated, and compound ceramic films, functional films, multi-component multi-layer films, super-lattices and films with gradient structures or pure metal films with different element ratios are prepared. By utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic lines of a magnetic field, the movable coil can adopt a classical 90-degree bending type, and can also adopt typical coil structure combinations such as straight line and bending, bending and straight line combination (the magnetic lines of the straight line part are tangent and intersected with the magnetic lines of the bent part), straight line and straight line combination (the magnetic lines of the two straight line parts are intersected), straight line, arc and straight line combination (the combination of three sections are intersected and tangent) and arc, straight line and arc combination (the tangency and the intersection among the three parts), wherein the arc and the straight line part are determined according to the requirements of spatial position and transmission path, the effective control of an arc plasma and a high-power pulse magnetron sputtering plasma transmission path is realized, and the residual large particle defects in the arc plasma transmitted from the multistage magnetic field device and the lining bias device are eliminated, overcomes the problems of unstable discharge and ion resorption in the high-power pulse magnetron sputtering technology, reduces the loss of the composite plasma in the transmission process of the vacuum chamber, the transmission efficiency of the composite plasma and the deposition speed of the film are further improved by the guidance of the magnetic field of the movable coil, the problem of uneven film deposition caused by the limitation of deposition positions or the limitation of substrate shapes caused by the layout design of the space of a vacuum chamber and a target source is solved, the preparation of the film can be realized at the optimal position of the vacuum chamber, the series resistance value of the movable coil can be adjusted through the rheostat device, the adjustment of the positive bias parameters of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, the defect of residual large particles is eliminated, and the deposition speed of the film is increased; the stable movement of the electric arc on the surface of the target material is ensured by utilizing the magnetic field constraint of the multistage magnetic field filtering device, continuous electric arc plasma is generated, the high-efficiency transmission of the electric arc plasma in the multistage magnetic field device is realized through the magnetic lines of the multistage magnetic field, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, and the large particle defect in the electric arc plasma is further reduced or even eliminated; the lining bias straight tube device is used for applying direct current, pulse or direct current pulse composite positive bias to continuously or periodically effectively attract large particles, so that the problem of the large particles generated by low-melting-point materials is effectively avoided, deposited ions are continuously or periodically repelled, the loss of plasma in the in-tube transmission process can be reduced through the bipolar pulse oscillation of the positive bias and the negative bias, the transmission efficiency of arc plasma and the deposition speed of a thin film are further improved, the outer diameter and the inner diameter of the straight tube are determined according to the inner diameter of the multistage magnetic field device and the outer diameter of an arc ion plating target source, the straight tube needs to select proper thickness according to the length and rigidity, the large particle defect in the arc plasma is eliminated by limiting the motion path of the large particle defect through the shape of the straight tube, the constraint clearing effect of the large particle defect is realized, and the lining bias straight tube device is flexibly disassembled, the cleaning is convenient, the problem of pollution cleaning of the inner wall of the tube of the multi-stage magnetic field device in a no-liner state is avoided, and the pollution of film components caused by secondary sputtering of different targets on pollutants on the inner wall of the multi-stage magnetic field device after the target is replaced can be effectively avoided; the pulse bias power supply eliminates the residual large particle defects and adjusts and optimizes the energy of the composite plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field, improves the interval potential distribution of the plasma near the matrix, fully attracts the composite plasma to move towards a workpiece, and realizes the rapid deposition of the film; the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; meanwhile, the arc ion plating technology is utilized to generate stable and continuous metal plasma with high ionization rate, which is beneficial to the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece, and compound ceramic films, functional films, multi-component multi-layer films, super lattices and films with gradient structures or pure metal films with different element ratios are prepared; the film prepared by the vacuum deposition device combining the combined magnetic field and the lining bias straight tube eliminates the defect of large particles in the film, reduces the loss of composite plasma in a filtering device and a vacuum chamber, avoids the pollution of residues on the surface of the lining device to the film caused by the replacement of different targets, improves the use efficiency of the composite plasma, realizes the rapid preparation of the film, optimizes the energy distribution of the composite plasma by using pulse bias, can ensure that the crystal structure and microstructure of the film are more compact, and is favorable for further improving the use performance of the film.

The second embodiment is as follows: the difference between the embodiment and the first embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the period of the output pulse of the high-power pulse magnetron sputtering power supply (4) is integral multiple of the output pulse of the bias power supply (1), as shown in figure 6, the period of the output pulse of the high-power pulse magnetron sputtering power supply (4) is 8 times of the output pulse period of the bias power supply (1), adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

The third concrete implementation mode: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) controls the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the high-power pulse magnetron sputtering power supply (4) outputs high-power pulses, and the bias pulse waveforms output by the bias power supply (1) are adjustable in phase, as shown in fig. 7, when the two power supply output pulse waveforms are all coincident due to different phase differences when the two power supply outputs the same pulse width, And partial superposition or non-superposition is carried out, so that reasonable matching of two power supply pulses is selected according to the process of film deposition, process parameters are adjusted, film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the rest is the same as that of the first embodiment.

The fourth concrete implementation mode: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the pulse widths of the high-power pulse magnetron sputtering power supply (4) and the bias power supply (1) output pulses are independently adjustable, as shown in figure 8, different pulse widths enable the output pulse waveforms of the two power supplies to cover the latter, The latter covers the former or completely coincides, the process parameters are adjusted, the film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the others are the same as the first embodiment.

The fifth concrete implementation mode: the present embodiment is different from the first embodiment in that the apparatus further includes: and step three, combining one or more of the traditional direct current magnetron sputtering method, the pulse magnetron sputtering method, the traditional arc ion plating method and the pulse cathode arc method, and applying a direct current bias voltage, a pulse bias voltage, a direct current pulse composite bias voltage or a bipolar pulse bias voltage device on the workpiece to perform film deposition to prepare a pure metal film, a compound ceramic film with different element ratios, a functional film and a high-quality film with a nano multilayer or gradient structure.

The sixth specific implementation mode: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force between the film and a substrate is improved, then the third step is carried out, the second step and the third step are repeatedly carried out, the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the rest is the same as that of the second embodiment.

The seventh embodiment: the difference between the first embodiment and the first embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force between the film and a substrate is improved, then the third step is carried out, the second step and the third step are repeatedly carried out, the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the rest is the same as that of the third embodiment.

The specific implementation mode is eight: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, in the second step, a high-power pulse magnetron sputtering power supply (4) can be used for magnetron sputtering and combined with a high-voltage pulse bias power supply for ion implantation and deposition, the bonding force between the film and a substrate is improved, then the third step is carried out, the second step and the third step are repeatedly carried out, the multilayer structure film with different stress states, microstructures and element proportions is prepared, and the rest is the same as that of the fourth embodiment.

The specific implementation method nine: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a vacuum deposition device compounded by a lining bias straight tube, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronous matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is unipolar multi-pulse, and is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply and the pulse waveform of the high-power pulse magnetron sputtering power supply are integral multiples of the waveform, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The detailed implementation mode is ten: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a vacuum deposition device compounded by a lining bias straight tube, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronous matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a unipolar single-section deep oscillation pulse, and then is matched with the output pulse of the bias power supply (1) in period, the bias power supply pulse waveform and the high-power pulse magnetron sputtering pulse waveform are integral multiples of the high-power pulse magnetron sputtering pulse waveform, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The concrete implementation mode eleven: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a single-polarity single-section deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse voltage can be started when the high-power pulse magnetron sputtering power supply (4) works, the plasma discharge is favorably reduced by the adverse effect of ignition on the plasma discharge, the plasma can be started in the middle, the plasma density is favorably improved, the stress of film deposition is adjusted, the plasma can be started at the end stage, the smooth discharge at the next stage is favorably realized, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage or can be different, the deep oscillation pulse stage can occupy the whole pulse period to form a deep oscillation pulse voltage mode and then is matched with the output pulse of a bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform, as shown in fig. 6, 7 and 8, the process parameters are adjusted, and the thin film deposition is performed to prepare the multi-layer structure thin film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode twelve: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a vacuum deposition device compounded by a lining bias straight tube, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a unipolar multi-stage deep oscillation pulse (as shown in figure 5) and then is matched with the output pulse of the bias power supply (1) in period, and the pulse waveform of the bias power supply is integral multiple of the pulse waveform of the high-power pulse magnetron sputtering power supply, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode is thirteen: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a unipolar multi-section deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse bias can be started when the high-power pulse magnetron sputtering power supply (4) works, the method is favorable for reducing the adverse effect of ignition on plasma discharge, can be started in the middle, is favorable for improving the plasma density and adjusting the stress of film deposition, can also be started at the end stage and is favorable for smooth discharge at the next stage, the amplitude of each section of deep oscillation pulse voltage can be the same as that of the pulse stage or different from that of the pulse stage, the same or different deep oscillation pulse voltage amplitudes can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or in a step change manner and then matched with the output pulse of a bias power supply (1) with the period, the pulse waveform of the bias power supply is integral multiple of that of a high-power pulse magnetron sputtering pulse waveform, different phases and different pulse widths, as shown in figures 6, 7 and 8, the process parameters are adjusted, the film deposition is carried out, and the film with different stress states and different stress states are prepared, The microstructure and element ratio of the multilayer structure film are the same as those in the first embodiment.

The specific implementation mode is fourteen: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar single pulse (as shown in figure 5), wherein the integral voltage amplitude of the ending stage is beneficial to reducing the accumulation of target surface potential, eliminating the sparking phenomenon and enabling the discharge of the next pulse to be carried out smoothly, and matching the pulse waveform of the bias power supply with integral multiple, different phases and different pulse widths of the magnetron sputtering pulse waveform of the high-power pulse by matching with the output pulse of the bias power supply (1) with the period, as shown in fig. 6, 7 and 8, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element proportions, wherein the rest is the same as that of the first embodiment.

The specific implementation method nine: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is used for starting and adjusting a multistage magnetic field device (12), a lining bias power supply (15) is started, the bias voltage of a lining bias straight tube device (14) is adjusted, a movable coil device power supply (10) is started and adjusting a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar multi-pulse (as shown in figure 5), and then is matched with the output pulse of the bias power supply (1) in period, the pulse waveform of the bias power supply and the pulse waveform of the high-power pulse magnetron sputtering power supply are integral multiple of, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The concrete implementation mode is fifteen: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is used for starting and adjusting a multistage magnetic field device (12), a lining bias power supply (15) is started, the bias voltage of a lining bias straight tube device (14) is adjusted, a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar unipolar single-section deep oscillation pulse (as shown in figure 5) and then is matched with the output pulse of the bias power supply (1) in period, and the pulse waveform of the bias power supply and the high-power pulse are integral multiples of the magnetron sputtering pulse waveform, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode is sixteen: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar unipolar single-section deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse bias can be started when the high-power pulse magnetron sputtering power supply (4) works, the plasma discharge is favorably reduced by the adverse effect of ignition on the plasma discharge, the plasma can be started in the middle, the plasma density is favorably improved, the stress of the film deposition is adjusted, the plasma can be started at the end stage, the smooth proceeding of the discharge at the next stage is favorably realized, the amplitude value of the deep oscillation pulse voltage can be adjusted to be different or step-changed amplitude values, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage, and then the deep oscillation pulse is matched with the output pulse of the bias power supply (1) with the period being the integral multiple of the pulse waveform of the high-power pulse magnetron sputtering, the matching of different phases and different pulse widths, as shown in figures 6, 7 and 8, the technological parameter is adjusted, the film deposition is carried out, and the multilayer structure films with different stress states, microstructures and element proportions are prepared, the rest is the same as the first embodiment.

Seventeenth embodiment: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias voltage of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar unipolar multi-stage deep oscillation pulse (as shown in figure 5), and then is matched with the output pulse of the bias power supply (1) in period, and the pulse waveform of the bias power supply and the high-power pulse are integral multiple of integral multiple, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode is eighteen: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar unipolar multistage deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse bias can be started when the high-power pulse magnetron sputtering power supply (4) works, the method is favorable for reducing the adverse effect of ignition on plasma discharge, can be started in the middle, is favorable for improving the plasma density and adjusting the stress of film deposition, can also be started at the end stage, is favorable for smooth discharge at the next stage, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage or can be different, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages, the deep oscillation pulse can also appear at the negative pulse stage, the deep oscillation pulse can also appear at the positive pulse stage, and then the deep oscillation pulse is matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is integral multiple of the pulse waveform of the high-power pulse magnetron sputtering, different phases and different pulse widths, as shown in figures 6, 7 and 8, the technological parameter adjustment is carried out for film deposition, and the preparation of the film with different stress states, The microstructure and element ratio of the multilayer structure film are the same as those in the first embodiment.

The detailed embodiment is nineteen: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a vacuum deposition device compounded by a lining bias straight tube, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is used for starting and adjusting a multistage magnetic field device (12), a lining bias power supply (15) is started, the bias voltage of a lining bias straight tube device (14) is adjusted, a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is a bipolar single-section deep oscillation pulse (as shown in figure 5) and then is matched with the output pulse of the bias power supply (1) in period, and the pulse waveform of the bias power supply and the high-power pulse magnetron sputtering power supply are integral multiples of the pulse waveform, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode twenty: the difference between the embodiment and the first embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar single-section deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse bias can be started when the high-power pulse magnetron sputtering power supply (4) works, the plasma discharge is favorably reduced by the adverse effect of ignition on the plasma discharge, the plasma can be started in the middle, the plasma density is favorably improved, the stress of film deposition is adjusted, the plasma can be started at the end stage, the smooth proceeding of the discharge at the next stage is favorably realized, the amplitude of the deep oscillation pulse voltage can be the same as that of the pulse stage or can be different selectively, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages and matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is matched with the integral multiple, different phases and different pulse widths of the high-power pulse magnetron sputtering pulse waveform, as shown in fig. 6, 7 and 8, the process parameters are adjusted, and the thin film deposition is performed to prepare the multi-layer structure thin film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

The specific implementation mode is twenty one: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a vacuum deposition device compounded by a lining bias straight tube, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is used for starting and adjusting a multistage magnetic field device (12), a lining bias power supply (15) is started, the bias voltage of a lining bias straight tube device (14) is adjusted, a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar multistage deep oscillation pulse (as shown in figure 5), and then is matched with the output pulse of the bias power supply (1) in period, and the pulse waveform of the bias power supply and the integral multiple of the pulse waveform of the high-power pulse magnetron sputtering power supply are connected, Matching of different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameter adjustment, film deposition, and preparation of a multi-layer structure film having different stress states, microstructures and element ratios, which are otherwise the same as those of the first embodiment.

Specific embodiment twenty-two: the difference between the first embodiment and the second embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multistage magnetic field device power supply (13) is started to adjust a multistage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, the output pulse of the high-power pulse magnetron sputtering power supply (4) is bipolar multistage deep oscillation pulse (as shown in figure 5), wherein the deep oscillation pulse bias can be started when the high-power pulse magnetron sputtering power supply (4) works, the plasma discharge is favorably reduced by the adverse effect of ignition on the plasma discharge, the plasma can be started in the middle, the plasma density is favorably improved, the stress of film deposition is adjusted, the plasma can be started at the end stage, the smooth proceeding of the discharge at the next stage is favorably realized, the amplitude of the deep oscillation pulse voltage can be the same as or different from the pulse stage, the amplitude of each section of the deep oscillation pulse voltage can be the same as or different from the pulse stage, the same or different amplitude of the deep oscillation pulse voltage can be adopted, the amplitude of the deep oscillation pulse voltage can be adjusted to be different or changed in stages, and the pulse voltage is matched with the output pulse of the bias power supply (1) with the period, the pulse waveform of the bias power supply is integral multiple of the pulse waveform of the high-power magnetron sputtering pulse, the pulse waveform of the bias power supply is different in phase and the pulse width is different, as shown in figure 6, figure 7 and figure 8, adjusting process parameters, depositing the film, and preparing the multilayer structure film with different stress states, microstructures and element ratios, wherein the rest are the same as the first embodiment.

Specific embodiment twenty-three: the difference between the embodiment and the first embodiment is that a vacuum deposition device combining a combined magnetic field and a lining bias straight tube is connected, an arc power supply (2) is started, a multi-stage magnetic field device power supply (13) is started to adjust a multi-stage magnetic field device (12), a lining bias power supply (15) is started to adjust the bias of a lining bias straight tube device (14), a movable coil device power supply (10) is started to adjust a movable coil device (9), the output resistance of a rheostat device (11) is adjusted, a waveform synchronization matching device (8) is used for controlling the bias power supply (1) and a high-power pulse magnetron sputtering power supply (4) to be started simultaneously, and the output pulse of the high-power pulse magnetron sputtering power supply (4) is unipolar monopulse, unipolar multipulse, unipolar single-section deep oscillation pulse, unipolar multistage deep oscillation pulse, bipolar monopulse, bipolar multipulse, Two or more combinations of working modes of bipolar unipolar single-section deep oscillation pulse, bipolar unipolar multistage deep oscillation pulse, bipolar single-section deep oscillation pulse and bipolar multistage deep oscillation pulse (as shown in fig. 5) are matched with output pulses of a bias power supply (1) in a period, the pulse waveform of the bias power supply is matched with integral multiple of the pulse waveform of high-power pulse magnetron sputtering, different phases and different pulse widths, as shown in fig. 6, 7 and 8, process parameters are adjusted, film deposition is carried out, and a multilayer structure film with different stress states, microstructures and element proportions is prepared, and the others are the same as the first embodiment.

Claims

1. A vacuum deposition device combining a combined magnetic field and a lining bias straight pipe is characterized by comprising a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a high-power pulse magnetron sputtering power supply (4), a high-power pulse magnetron sputtering target source (5), a bias power waveform oscilloscope (6), a high-power pulse magnetron sputtering power waveform oscilloscope (7), a waveform synchronous matching device (8), a movable coil device (9), a movable coil device power supply (10), a rheostat device (11), a multistage magnetic field device (12), a multistage magnetic field device power supply (13), a lining bias straight pipe device (14), a lining bias power supply (15), a sample table (16) and a vacuum chamber (17);

in the device: a substrate workpiece to be processed is arranged on a sample table (16) in a vacuum chamber (17), an electric arc ion plating target source (3), a high-power pulse magnetron sputtering target source (5), a movable coil device (9) and the vacuum chamber (17) are mutually insulated, the workpiece is arranged on the sample table (16), the sample table (16) is connected with the negative electrode output end of a bias power supply (1), the electric arc ion plating target source (3) and the high-power pulse magnetron sputtering target source (5) are arranged on the vacuum chamber (17) and are respectively connected with the negative electrode output ends of an arc power supply (2) and a high-power pulse magnetron sputtering power supply (4), one end of a waveform oscilloscope (7) of the high-power pulse magnetron sputtering power supply is grounded, the other end of the waveform oscilloscope is connected with the output end of the high-power pulse magnetron sputtering power supply (4), the movable coil device (9) is connected with the movable coil device power supply (10) through the positive and negative electrode input ends on a flange port, the rheostat device (11) is connected with the movable coil device (9) in series and is connected into a loop of a power supply (10) of the movable coil device, the negative pole of the bias power supply (1) is connected with the sample stage (16), one end of the bias power supply waveform oscilloscope (6) is grounded, the other end of the bias power supply waveform oscilloscope is connected with the output end of the bias power supply (1), each stage of magnetic field of the multistage magnetic field device (12) is connected with each output end of the multistage magnetic field device power supply (13), and the lining bias straight tube device (14) is connected with the positive output end of the lining bias power supply (15);

and (3) thin film deposition:

liner bias straight pipe device (14) matched with multistage magnetThe field device (12) is designed to be the inner diameter of a straight pipeDThe outer diameter of the arc ion plating target source (3) is larger than that of the arc ion plating target source, the outer diameter of the arc ion plating target source is smaller than that of the inner diameter of the multistage magnetic field device (12), and the arc ion plating target source and the multistage magnetic field device (12) are movably assembled in an insulating mode; straight tube length of liner bias straight tube device (14)HThe length of the device is the same as that of the multistage magnetic field device (12), and the configuration scheme of the lining bias straight tube device (14) is selected according to different target materials and process parameters, so that the effect of removing large particles by utilizing self shape constraint is realized;

the materials of the multistage magnetic field device (12) and the lining bias straight tube device (14) are selected from 304 stainless steel materials which are nonmagnetic and resistant to cleaning, the length, the inner diameter, the outer diameter, the thickness, the number of turns of a magnetic field and the direction of the multistage magnetic field device (12) are determined according to the diameter, the cooling distance and the transmission distance of a target material, the outer diameter and the inner diameter of the straight tube are determined by the lining bias straight tube device (14) according to the inner diameter of the multistage magnetic field device (12) and the outer diameter of the arc ion plating target source (3), the thickness of the straight tube is selected according to the length and the rigidity, and the straight tube is processed according to actual design parameters;

the arc ion plating target source (3), the high-power pulse magnetron sputtering target source (5), the multi-stage magnetic field device (12) and the movable coil device (9) adopt a direct water cooling mode.