CN110459639A - Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film - Google Patents
Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film Download PDFInfo
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- CN110459639A CN110459639A CN201910742699.1A CN201910742699A CN110459639A CN 110459639 A CN110459639 A CN 110459639A CN 201910742699 A CN201910742699 A CN 201910742699A CN 110459639 A CN110459639 A CN 110459639A
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- 238000000137 annealing Methods 0.000 title claims abstract description 54
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000001257 hydrogen Substances 0.000 title claims abstract description 40
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 48
- 239000010409 thin film Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H01L31/02167—
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- H01L31/072—
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- H01L31/1864—
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- H01L31/1876—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film of the present invention, it includes silicon substrate (1), the two-sided of the silicon substrate (1) is equipped with amorphous silicon intrinsic layer (2), it is equipped with amorphous silicon doped layer (3) on the outside of the amorphous silicon intrinsic layer (2), is equipped with TCO conductive film (4) on the outside of the amorphous silicon doped layer (3)；It is characterized by: forming annealed layer (6) through hydrogen anneal process on the outside of the TCO conductive film (4), several Ag electrodes (5) are equipped on the outside of the annealed layer (6).The present invention can effectively solve the problems, such as that the transmitance of low temperature preparation TCO thin film is contradicted with conductivity, so that TCO conductive film is obtained preferably transmitance and conductivity, to promote the photoelectric properties of HJT solar battery.
Description
Technical field
The present invention relates to photovoltaic high-efficiency battery technical fields more particularly to a kind of with the heterogeneous of hydrogen annealing TCO conductive film
Junction battery structure and preparation method thereof.
Background technique
With the fast development of photovoltaic technology, the transfer efficiency of crystal-silicon solar cell improves year by year.In current photovoltaic work
Industry, the transfer efficiency of single crystal silicon solar cell have reached 20% or more, and the transfer efficiency of polycrystalline silicon solar cell is up to 18.5%
More than.However the back of the silica-based solar cell of large-scale production, transfer efficiency up to 22.5% or more only U.S. SunPower company
Contact the amorphous with intrinsic sheet of solar cell (Interdigitated Back Contact, IBC) and Matsushita Corporation of Japan
Silicon/crystalline silicon heterojunction solar battery (Hetero-junction with Intrinsic Thin layer, HJT).And IBC
Solar cell is compared, and HJT battery has many advantages, such as less energy consumption, process flow are simple, temperature coefficient is small, these are also HJT
The reason of solar battery can show one's talent from numerous efficient silica-based solar cell schemes.
Currently, China is wideling popularize distributed solar energy photovoltaic power generation, since Roof Resources are limited, and also it is distributed
The solar module of photovoltaic power generation demand high conversion efficiency has efficient, generating electricity on two sides excellent just because of HJT solar cell
Gesture shows wide application prospect in photovoltaic power station.
As shown in Figure 1, the electrode structure of the HJT cell piece for the prior art, the preparation method of existing HJT battery TCO are straight
It connects using the same gas flow of more targets, with power and prepares, entire TCO thin film property is the same.TCO thin film main function be
Transmit carrier, antireflective and protection amorphous silicon film layer.Due to the characteristic of amorphous silicon membrane, the prior art is in preparation TCO thin film
When all use low temperature depositing, after completing preparation, directly print silver electrode, TCO thin film is without any processing, TCO conductive film
Transmission with conduction contradict, high transmittance and high conductivity can not be obtained simultaneously, the TCO thin film being prepared can not obtain
Preferably transmitance and conductivity are obtained, to influence the photoelectric properties of HJT solar battery.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of hetero-junction solar cells with hydrogen annealing TCO conductive film
Structure and preparation method thereof makes TCO conductive film obtain preferably transmitance and conductivity, promotes heterojunction solar battery
Energy.
The object of the present invention is achieved like this:
A kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film, it includes silicon substrate, and the two-sided of the silicon substrate is all provided with
Have amorphous silicon intrinsic layer, be equipped with amorphous silicon doped layer on the outside of the amorphous silicon intrinsic layer, the amorphous silicon doped layer it is outer
Side is equipped with TCO conductive film；Annealed layer is formed through hydrogen anneal process on the outside of the TCO conductive film.
A kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film is equipped with several Ag on the outside of the annealed layer
Electrode.
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, including the following contents:
It chooses substrate silicon substrate and carries out making herbs into wool, cleaning treatment；
Two-sided amorphous silicon intrinsic layer is prepared by PECVD；
N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition；
P-type amorphous silicon doped layer is prepared using plasma activated chemical vapour deposition；
Two-sided TCO conductive film is deposited, using PVD method with a thickness of 100nm；
It anneals in the hydrogen gas atmosphere；
Positive back side Ag electrode is formed by silk-screen printing；
Solidification is so that form good Ohmic contact between silver grating line and TCO conductive film；
Carry out the electrical property of test battery.
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, annealing temperature are 160 ~ 200
℃。
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, annealing time are 10 ~ 20min.
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, annealing gas pressure be 120 ~
300pa。
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, the amorphous silicon intrinsic thickness
Degree is 5 ~ 10nm.
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, the N-shaped amorphous silicon doped layer
With a thickness of 4 ~ 8nm, the p-type amorphous silicon doped layer with a thickness of 7 ~ 15 nm.
A kind of preparation method of the hetero-junction solar cell structure with hydrogen annealing TCO conductive film, the film thickness of the TCO conductive film
For 70 ~ 110nm.
Compared with prior art, the beneficial effects of the present invention are:
The present invention carries out hydrogen environment annealing after the complete TCO conductive film of double-sided deposition, can effectively solve low temperature preparation TCO
The problem of transmitance of film is contradicted with conductivity makes TCO conductive film obtain preferably transmitance and conductivity, to be promoted
The photoelectric properties of HJT solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing heterojunction solar battery.
Fig. 2 is the structural schematic diagram of heterojunction solar battery of the present invention.
Wherein:
Silicon substrate 1, amorphous silicon intrinsic layer 2, amorphous silicon doped layer 3, TCO conductive film 4, Ag electrode 5, annealed layer 6.
Specific embodiment
Embodiment 1:
Referring to fig. 2, a kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, it includes silicon substrate
1, the two-sided of the silicon substrate 1 is equipped with amorphous silicon intrinsic layer 2, and the outside of the amorphous silicon intrinsic layer 2 is equipped with amorphous silicon and mixes
Diamicton 3, the outside of the amorphous silicon doped layer 3 are equipped with TCO conductive film 4, and 4 outside of TCO conductive film is through hydrogen anneal process
Annealed layer 6 is formed, the outside of the annealed layer 6 is equipped with several Ag electrodes 5.
The annealing temperature of the hydrogen anneal process is 170 DEG C, annealing time 18min, annealing gas pressure 160pa.
A kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the silicon substrate 1 of 180um；
(2) two-sided intrinsic amorphous silicon layer 2 is prepared by PECVD, with a thickness of 6nm；
(3) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(4) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(5) two-sided TCO conductive film 4 is deposited using PVD method, with a thickness of 100nm；
(6) it anneals in the hydrogen gas atmosphere, annealing temperature is 170 DEG C, annealing time 18min, annealing gas pressure 160pa；
(7) positive back side Ag electrode 5 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 4；
(9) electrical property of test battery is carried out.
Embodiment 2:
Referring to fig. 2, a kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, it includes silicon substrate
1, the two-sided of the silicon substrate 1 is equipped with amorphous silicon intrinsic layer 2, and the outside of the amorphous silicon intrinsic layer 2 is equipped with amorphous silicon and mixes
Diamicton 3, the outside of the amorphous silicon doped layer 3 are equipped with TCO conductive film 4, and 4 outside of TCO conductive film is through hydrogen anneal process
Annealed layer 6 is formed, the outside of the annealed layer 6 is equipped with several Ag electrodes 5.
The annealing temperature of the hydrogen anneal process is 185 DEG C, annealing time 14min, annealing gas pressure 210pa.
A kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the silicon substrate 1 of 180um；
(2) two-sided intrinsic amorphous silicon layer 2 is prepared by PECVD, with a thickness of 6nm；
(3) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(4) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(5) two-sided TCO conductive film 4 is deposited using PVD method, with a thickness of 100nm；
(6) it anneals in the hydrogen gas atmosphere, annealing temperature is 185 DEG C, annealing time 14min, annealing gas pressure 210pa；
(7) positive back side Ag electrode 5 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 4；
(9) electrical property of test battery is carried out.
Embodiment 3:
Referring to fig. 2, a kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, it includes silicon substrate
1, the two-sided of the silicon substrate 1 is equipped with amorphous silicon intrinsic layer 2, and the outside of the amorphous silicon intrinsic layer 2 is equipped with amorphous silicon and mixes
Diamicton 3, the outside of the amorphous silicon doped layer 3 are equipped with TCO conductive film 4, and 4 outside of TCO conductive film is through hydrogen anneal process
Annealed layer 6 is formed, the outside of the annealed layer 6 is equipped with several Ag electrodes 5.
The annealing temperature of the hydrogen anneal process is 200 DEG C, annealing time 10min, annealing gas pressure 250pa.
A kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film of the present invention, including with
Under several steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the silicon substrate 1 of 180um；
(2) two-sided intrinsic amorphous silicon layer 2 is prepared by PECVD, with a thickness of 6nm；
(3) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(4) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(5) two-sided TCO conductive film 4 is deposited using PVD method, with a thickness of 100nm；
(6) it anneals in the hydrogen gas atmosphere, annealing temperature is 200 DEG C, annealing time 10min, annealing gas pressure 250pa；
(7) positive back side Ag electrode 5 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 4；
(9) electrical property of test battery is carried out.
By the existing skill of the embodiment of the present invention data and the TCO conductive film hetero-junction solar cell structure without hydrogen anneal process
Art comparison, the electrical property of the present invention and the prior art are compared referring to following table, mainly from open-circuit voltage Voc, short circuit current Isc and are filled out
Factor FF embodiment is filled, the promotion of available solar battery unit for electrical property parameters of the invention imitates the conversion of solar battery
Rate Eta has absolute 0.15% promotion.
。
The above is only specific application examples of the invention, are not limited in any way to protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (9)
1. a kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film, it includes silicon substrate (1), the silicon substrate (1)
It is two-sided to be equipped with amorphous silicon intrinsic layer (2), it is equipped with amorphous silicon doped layer (3) on the outside of the amorphous silicon intrinsic layer (2), it is described
TCO conductive film (4) are equipped on the outside of amorphous silicon doped layer (3)；It is characterized by: being moved back on the outside of the TCO conductive film (4) through hydrogen
Fiery processing forms annealed layer (6).
2. a kind of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 1, it is characterised in that:
Several Ag electrodes (5) are equipped on the outside of the annealed layer (6).
3. a kind of preparation method of the hetero-junction solar cell structure described in claim 1 with hydrogen annealing TCO conductive film, feature
It is, including the following contents:
It chooses substrate silicon substrate (1) and carries out making herbs into wool, cleaning treatment；
Two-sided amorphous silicon intrinsic layer (2) are prepared by PECVD；
N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition；
P-type amorphous silicon doped layer is prepared using plasma activated chemical vapour deposition；
Two-sided TCO conductive film (4) is deposited, using PVD method with a thickness of 100nm；
It anneals in the hydrogen gas atmosphere；
Positive back side Ag electrode (5) is formed by silk-screen printing；
Solidification is so that form good Ohmic contact between silver grating line and TCO conductive film；
Carry out the electrical property of test battery.
4. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: annealing temperature is 160 ~ 200 DEG C.
5. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: annealing time is 10 ~ 20min.
6. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: annealing gas pressure is 120 ~ 300pa.
7. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: the amorphous silicon intrinsic layer (2) is with a thickness of 5 ~ 10nm.
8. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: the N-shaped amorphous silicon doped layer with a thickness of 4 ~ 8nm, the p-type amorphous silicon doped layer with a thickness of 7 ~ 15 nm.
9. a kind of preparation method of hetero-junction solar cell structure with hydrogen annealing TCO conductive film according to claim 3,
Be characterized in that: the film thickness of the TCO conductive film (4) is 70 ~ 110nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397596A (en) * | 2020-12-28 | 2021-02-23 | 东方日升新能源股份有限公司 | Low-cost high-efficiency solar cell and preparation method thereof |
| CN115763632A (en) * | 2022-11-30 | 2023-03-07 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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| CN102751339A (en) * | 2012-05-08 | 2012-10-24 | 常州天合光能有限公司 | Heterojunction solar cell structure and manufacturing method thereof |
| CN105226135A (en) * | 2015-10-14 | 2016-01-06 | 新奥光伏能源有限公司 | A kind of silicon heterogenous solar cell and preparation method thereof |
| CN106601861A (en) * | 2015-10-14 | 2017-04-26 | 福建金石能源有限公司 | Annealing method for heterojunction solar cell |
| CN109509807A (en) * | 2018-12-04 | 2019-03-22 | 江苏爱康能源研究院有限公司 | Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof |
| CN210156405U (en) * | 2019-08-13 | 2020-03-17 | 江苏爱康能源研究院有限公司 | Heterojunction cell structure with hydrogen annealed TCO conductive film |
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2019
- 2019-08-13 CN CN201910742699.1A patent/CN110459639A/en active Pending
Patent Citations (5)
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| CN102751339A (en) * | 2012-05-08 | 2012-10-24 | 常州天合光能有限公司 | Heterojunction solar cell structure and manufacturing method thereof |
| CN105226135A (en) * | 2015-10-14 | 2016-01-06 | 新奥光伏能源有限公司 | A kind of silicon heterogenous solar cell and preparation method thereof |
| CN106601861A (en) * | 2015-10-14 | 2017-04-26 | 福建金石能源有限公司 | Annealing method for heterojunction solar cell |
| CN109509807A (en) * | 2018-12-04 | 2019-03-22 | 江苏爱康能源研究院有限公司 | Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof |
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| CN112397596A (en) * | 2020-12-28 | 2021-02-23 | 东方日升新能源股份有限公司 | Low-cost high-efficiency solar cell and preparation method thereof |
| CN115763632A (en) * | 2022-11-30 | 2023-03-07 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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