CN103077982A - Amorphous silicon germanium thin-film solar battery - Google Patents
Amorphous silicon germanium thin-film solar battery Download PDFInfo
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- CN103077982A CN103077982A CN2011103318775A CN201110331877A CN103077982A CN 103077982 A CN103077982 A CN 103077982A CN 2011103318775 A CN2011103318775 A CN 2011103318775A CN 201110331877 A CN201110331877 A CN 201110331877A CN 103077982 A CN103077982 A CN 103077982A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a photovoltaic solar battery, and discloses an amorphous silicon germanium thin-film solar battery. The amorphous silicon germanium thin-film solar battery comprises a back electrode 12, an N type amorphous silicon doping layer 13, an amorphous silicon germanium battery intrinsic absorption layer 14, a broad-band-gap amorphous silicon P type doping layer 16 and a front electrode 17 which are sequentially deposited on a flexible substrate 11; and according to the amorphous silicon germanium thin-film solar battery, a narrow-band-gap light dope amorphous silicon P layer 15 is arranged between the amorphous silicon germanium battery intrinsic absorption layer 14 and the broad-band-gap amorphous silicon P type doping layer 16 as a buffer layer. With the amorphous silicon germanium thin-film solar battery, the problem of mismatching the energy band between the intrinsic absorption layer and the broad-band-gap P layer with the interface can be effectively improved, the output and collection of current carriers can be facilitated, and further the filling factor and conversion efficiency of the battery can be improved.
Description
Technical field
The present invention relates to the photovoltaic solar battery, especially a kind of amorphous silicon germanium thin film solar cell.
Background technology
In various hull cells, amorphous silicon (a-Si:H) thin film solar cell be develop the earliest, the hull cell of most study.Because the greater band gap of amorphous silicon thin-film materials own is insufficient to longwave optical absorption in the solar spectrum, has limited the further raising of battery efficiency.In order to address this problem, people have extensively carried out the research work of amorphous silicon germanium (a-SiGe:H) hull cell in recent years, so that the silica-based laminated film solar battery of flexible substrate that is made of photovoltaic film materials such as amorphous silicon, amorphous silicon germaniums can be widely used in the fields such as photovoltaic generation and spacecraft power supply.
The amorphous silicon germanium of prior art (a-SiGe:H) hull cell normally deposits back electrode, N-type amorphous silicon doped layer, amorphous silicon germanium battery Intrinsic Gettering layer, amorphous silicon broad-band gap P type doped layer and front electrode successively on flexible substrate; Because the P layer generally adopts noncrystalline silicon carbide (a-SiC:H) or the nano-silicon (nc-Si:H) of broad-band gap in the silicon-base thin-film battery structure, therefore their band gap width causes that the interface mismatch between the Intrinsic Gettering layer and P type doped layer increases in the amorphous silicon germanium thin film battery about 2.0eV.Although people have adopted intrinsic layer band gap gradual change technology and add amorphous silicon resilient coating technology etc. at the P/I interface, the amorphous silicon germanium thin film battery is still unsatisfactory at aspects such as fill factor, curve factor and conversion efficiencies, still has larger room for improvement.
Do not find at present explanation or the report of technology similar to the present invention, not yet collect both at home and abroad similarly data yet.
Summary of the invention
The problems such as interface mismatch between Intrinsic Gettering layer in the amorphous silicon germanium thin film battery that solves prior art and the P type doped layer the object of the present invention is to provide a kind of amorphous silicon germanium thin film solar cell.Utilize the present invention, can effectively improve can be with and the problem such as interface mismatch between Intrinsic Gettering layer and the broad-band gap P layer, more be conducive to output and the collection of charge carrier, thereby improve fill factor, curve factor and the conversion efficiency of battery.
In order to reach the foregoing invention purpose, the present invention is that the technical scheme that its technical problem of solution adopts provides a kind of amorphous silicon germanium thin film solar cell, and this device comprises:
On flexible substrate, deposit successively back electrode, N-type amorphous silicon doped layer, amorphous silicon germanium battery Intrinsic Gettering layer, amorphous silicon broad-band gap P type doped layer, front electrode; According to the present invention, between amorphous silicon germanium battery Intrinsic Gettering layer and amorphous silicon broad-band gap P type doped layer, also include a narrow band gap light dope amorphous silicon P type resilient coating.The Density of gap states of this light dope amorphous silicon P layer is less than 1 * 10
15Cm
-3, band gap width is 1.7eV, thickness is between 1nm～5nm.
A kind of amorphous silicon germanium thin film solar cell of the present invention, owing to take above-mentioned technical scheme, adding one deck band gap between amorphous silicon germanium intrinsic layer and broad-band gap P layer is that 1.7eV left and right sides narrow band gap light dope amorphous silicon P layer is as resilient coating as thin as a wafer, because this P layer is lightly doped, and adopt traditional P layer preparation condition, it is narrow to be that its band gap width is compared P layer nano-silicon Window layer band gap, mixing so that the electronics that produces at the interface near I/P continues to remain in face of the high interface potential barrier of it, limited the generation of reverse current, dwindled simultaneously the barrier height that the hole faces, so that the easier P layer region that is collected in hole that produces.Therefore the present invention improves can be with and the problem such as interface mismatch between Intrinsic Gettering layer and the broad-band gap P layer effectively, more is conducive to output and the collection of charge carrier, thus fill factor, curve factor and the conversion efficiency of raising battery.
Resilient coating of the present invention is equally applicable to microcrystal silicon (μ c-Si:H) thin film solar cell, and crystallite SiGe (μ c-SiGe:H) thin film solar cell.
Description of drawings
Fig. 1 is that substrate of the present invention is the amorphous silicon germanium thin film solar battery structure schematic diagram of stainless steel or polyimides;
Fig. 2 is that substrate of the present invention is the amorphous silicon germanium thin film solar battery structure schematic diagram of clear glass.
Embodiment
Below in conjunction with description of drawings the preferred embodiments of the present invention.
Fig. 1 is that substrate of the present invention is the amorphous silicon germanium thin film solar battery structure schematic diagram of stainless steel or polyimides, and shown in the embodiment of Fig. 1, this device comprises:
On substrate 11, deposit successively back electrode 12, N-type amorphous silicon doped layer 13, amorphous silicon germanium battery Intrinsic Gettering layer 14, narrow band gap light dope amorphous silicon P layer 15, amorphous silicon broad-band gap P type doped layer 16, front electrode 17.
Fig. 2 is that substrate of the present invention is the amorphous silicon germanium thin film solar battery structure schematic diagram of clear glass, and shown in the embodiment of Fig. 2, this device comprises:
Embodiment according to Fig. 1 and Fig. 2, the present invention compares with the amorphous silicon germanium thin film solar cell of prior art, it is characterized in that, between amorphous silicon germanium battery Intrinsic Gettering layer and amorphous silicon broad-band gap P type doped layer, also include a narrow band gap light dope amorphous silicon P type resilient coating.
Above-mentioned resilient coating Density of gap states is less than 1 * 10
16Cm
-3
Above-mentioned resilient coating band gap magnitude is 1.7eV.
Above-mentioned buffer layer thickness is between 1nm～5nm.
The temperature deposit of above-mentioned resilient coating using plasma assistant chemical vapor deposition method (PECVD) about 200 ℃.Resilient coating can be equally applicable to microcrystal silicon (μ c-Si:H) thin film solar cell, and crystallite SiGe (μ c-SiGe:H) thin film solar cell.
Below be one embodiment of the present of invention and test data sheet thereof.
Take the thick flexible stainless steel of 50 μ m as substrate, using plasma assistant chemical vapor deposition method (PECVD, operating frequency is 13.56MHz), on at the bottom of the stainless steel lining with Ag/ZnO composite back reflector sedimentary facies with three layers of silicon thin film of N, I, P, wherein N layer reacting gas is hydrogen, silane, phosphine, and thickness is about 50nm; I layer reacting gas is hydrogen, silane, and thickness is about 300nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is about 30nm.
Wherein, prepare respectively three kinds of different resilient coatings between the P/I interface: (1) does not add resilient coating for the P/I interface; (2) add one deck intrinsic amorphous silicon resilient coating for the P/I interface, thickness is 5nm; (3) add one deck narrow band gap light dope amorphous silicon P layer for the P/I interface, thickness is 2nm.
Sedimentary facies ito thin film together is as front electrode on above-mentioned three groups of samples to adopt magnetically controlled sputter method (operating frequency is 13.56MHz), and thickness is about 70nm.
At 25 ℃, AM 0 solar spectrum (1353W/m
2) under carry out solar cell output characteristic test, test result is as shown in table 1.Can see that the lifting of battery sample 3 aspect open circuit voltage and fill factor, curve factor of adding narrow band gap light dope amorphous silicon P type resilient coating is fairly obvious.
This is because the narrow band gap light dope amorphous silicon P type resilient coating that adds is lightly doped, and adopt traditional P layer preparation condition, it is narrow to be that its band gap width is compared P layer nano-silicon Window layer band gap, mixing so that the electronics that produces at the interface near I/P continues to remain in face of the high interface potential barrier of it, limited the generation of reverse current, dwindled simultaneously the barrier height that the hole faces, so that the easier P layer region that is collected in hole that produces.Effectively improve can be with and the problem such as interface mismatch between Intrinsic Gettering layer and the broad-band gap P layer, more be conducive to output and the collection of charge carrier, thereby improve fill factor, curve factor and the conversion efficiency of battery.
The corresponding solar cell electrology characteristic of the different P/I of table 1 interface resilient coating
Claims (4)
1. an amorphous silicon germanium thin film solar cell is included in and deposits successively back electrode, N-type amorphous silicon doped layer, amorphous silicon germanium battery Intrinsic Gettering layer, amorphous silicon broad-band gap P type doped layer, front electrode on the flexible substrate; It is characterized in that, also include a narrow band gap light dope amorphous silicon P type resilient coating between amorphous silicon germanium battery Intrinsic Gettering layer and the amorphous silicon broad-band gap P type doped layer.
2. thin film solar cell as claimed in claim 1, it is characterized in that: the Density of gap states of described narrow band gap light dope amorphous silicon P type resilient coating is less than 1 * 10
15Cm
-3
3. thin film solar cell as claimed in claim 1 or 2, it is characterized in that: described resilient coating band gap magnitude is 1.7eV.
4. thin film solar cell as claimed in claim 3, it is characterized in that: described buffer layer thickness is between 1nm～5nm.
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| CN2011103318775A CN103077982A (en) | 2011-10-26 | 2011-10-26 | Amorphous silicon germanium thin-film solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393087A (en) * | 2014-11-14 | 2015-03-04 | 西安电子科技大学 | Amorphous silicon membrane solar battery with gradually-changed germanium component intrinsic layer and preparation method of amorphous silicon membrane solar battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4728370A (en) * | 1985-08-29 | 1988-03-01 | Sumitomo Electric Industries, Inc. | Amorphous photovoltaic elements |
| CN101257056A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
-
2011
- 2011-10-26 CN CN2011103318775A patent/CN103077982A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4728370A (en) * | 1985-08-29 | 1988-03-01 | Sumitomo Electric Industries, Inc. | Amorphous photovoltaic elements |
| CN101257056A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393087A (en) * | 2014-11-14 | 2015-03-04 | 西安电子科技大学 | Amorphous silicon membrane solar battery with gradually-changed germanium component intrinsic layer and preparation method of amorphous silicon membrane solar battery |
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Application publication date: 20130501 |