CN102208477B - Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof - Google Patents
Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof Download PDFInfo
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- CN102208477B CN102208477B CN2011101375769A CN201110137576A CN102208477B CN 102208477 B CN102208477 B CN 102208477B CN 2011101375769 A CN2011101375769 A CN 2011101375769A CN 201110137576 A CN201110137576 A CN 201110137576A CN 102208477 B CN102208477 B CN 102208477B
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Abstract
The invention provides an amorphous silicon/microcrystalline silicon laminated solar cell, comprising a glass substrate, a transparent conductive film, a P1-I1-N1 amorphous silicon cell, a P2-I2-N2 microcrystalline silicon cell, an n-type layer in which an amorphous silicon/microcrystalline silicon transitional region is close to an amorphous silicon region, a ZnO (Zinc Oxide) layer, an Al (Aluminum) layer, an EVA (Ethylene-vinyl Acetate Copolymer) layer and back plate glass, wherein the glass substrate, the transparent conductive film, the P1-I1-N1 amorphous silicon cell, the P2-I2-N2 microcrystalline silicon cell, the n-type layer, the ZnO layer, the Al layer, the EVA layer and the back plate glass form a laminated structure in sequence; the P1-I1-N1 amorphous silicon cell is used as a top cell; the P2-I2-N2 microcrystalline silicon cell is used as a bottom cell; and the ZnO and the Al are used as a composite back electrode. The amorphous silicon/microcrystalline silicon laminated solar cell provided by the invention has the following advantages that: because an nth layer of the amorphous silicon top cell stored in the atmosphere is treated by using H or Ar plasma before the microcrystalline silicon bottom cell is prepared, an SiOx layer generated due to the reaction between the surface of the nth layer and oxygen in the atmosphere can be eliminated; and the amorphous silicon/microcrystalline silicon laminated solar cell provided by the invention has the advantages of simple preparation process, easiness for control, high excellence rate of products, high cell conversion efficiency and low updating and upgrading cost of the product, can be conveniently transplanted to a traditional silicon-based film cell production line and is beneficial for popularization.
Description
Technical field
The present invention relates to the silicon-based thin film solar cell technology of preparing, particularly is a kind of amorphous silicon/microcrystalline silicon tandem solar cell and preparation method thereof.
Background technology
Solar energy is nexhaustible regenerative resource, and environmental protection is had crucial meaning, and effective utilization of solar energy has become human common recognition.The utilization of solar energy, especially photovoltaic power generation technology are renewable energy technologies the most likely.Distinct advantages such as that solar cell power generation has is safe and reliable, pollution-free, need not consume fuel, renewable, mechanical rotating part; Especially can combine with building; Constituting photovoltaic roof electricity generation system, become most important component in the regenerative resource, also is that development in recent years is the fastest; Most active, as to attract most attention research field, many in the world countries all the commercial development of solar energy power generating with utilize as important developing direction.
Silicon-based thin film solar cell is saved raw material except having, power consumption is low, cost is low, be easy to the advantage of large tracts of land production, and abundant raw materials, advantage such as pollution-free are also arranged.Amorphous silicon solar cell is owing to have photic attenuating effect, thereby limited its application.The material order of micro crystal silicon solar battery is improved, and it is very little to fail, and combines effectively spread spectrum response range with amorphous silicon, improves the cell photoelectric conversion efficiency, reduces the battery cost.
Existing amorphous silicon film solar battery has been realized industrialization, considers further raising silicon-base thin-film battery efficient and reduces cost, and the research of amorphous silicon/microcrystalline silicon tandem solar cell has very important meaning.But, be upgraded to the amorphous silicon/microcrystalline silicon tandem solar cell for most existing amorphous silicon solar cell production line technology, very big difficulty is arranged; For example, equipment component can't prepare microcrystal silicon, needs the production line upgrading; The fund that has high input is unfavorable for problems such as product reduces cost.
Summary of the invention
The objective of the invention is provides a kind of amorphous silicon/microcrystalline silicon tandem solar cell and preparation method thereof to above-mentioned existing problems, and this method can significantly reduce investment, improves battery conversion efficiency, reduce the solar cell cost.
Technical scheme of the present invention:
A kind of amorphous silicon/microcrystalline silicon tandem solar cell is by glass substrate, nesa coating TCO, p type amorphous silicon Window layer P
1, amorphous silicon intrinsic layer I
1, n type amorphous silicon layer N
1, high conductivity and high crystallization rate n type microcrystal silicon layer N
1+, p type microcrystal silicon layer P
2, microcrystalline silicon intrinsic layer I
2, amorphous silicon/microcrystal silicon transition region is near the n type layer N of amorphous silicon region
2, ZnO layer, metal Al layer, EVA layer and back-panel glass layer form and form laminated construction successively, wherein with P
1-I
1-N
1Amorphous silicon battery is as the top battery of laminated cell, with P
2-I
2-N
2The microcrystal silicon battery is as the end battery of laminated cell, with ZnO and Al as composite back electrode.
A kind of preparation method of said amorphous silicon/microcrystalline silicon tandem solar cell, step is following:
1) the nesa coating TCO on the glass substrate is carried out edging, washed with de-ionized water, oven dry after, with wavelength 1024nm laser grooving and scribing TCO, clean the TCO after the laser grooving and scribing;
2) adopt the PECVD legal system to be equipped with P
1-I
1-N
1Amorphous silicon battery;
3) vacuum breaker takes out amorphous silicon top battery, adopts the PECVD method with H or Ar Cement Composite Treated by Plasma amorphous silicon battery N
1Layer;
4) adopt the PECVD legal system to be equipped with the N of high crystallization rate and high conductivity
1+Layer;
5) adopt the PECVD legal system to be equipped with P
2-I
2-N
2Battery at the bottom of the microcrystal silicon prepares N in amorphous silicon/microcrystal silicon transition region near amorphous silicon region
2Layer;
6) with wavelength 532nm laser grooving and scribing silicon thin film, isolate 39 sub-batteries;
7) with PVD method sputter ZnO and Al composite back electrode;
8) with wavelength 532nm laser grooving and scribing ZnO and Al composite back electrode and separaant battery back electrode;
9) manufacture batteries insulation limit and welding lead, the lamination packaged battery gets final product.
Said employing PECVD legal system is equipped with amorphous silicon N
1Layer and to the amorphous silicon top battery N of vacuum breaker
1Layer uses the technological parameter of H or Ar plasma treatment to be: aura stimulating frequency 13.56 ~ 100MHz, reacting gas pressure 0.1 ~ 10 Torr, glow power density 10 ~ 1000mW/cm
2, handle 100 ~ 300 ℃ of sample temperatures, H or Ar plasma treatment time 10 ~ 1000S.
Said employing PECVD legal system is equipped with the N of high crystallization rate and high conductivity
1+The technological parameter of layer is: aura stimulating frequency 13.56 ~ 100MHz, reacting gas pressure 0.1 ~ 10 Torr, glow power density 10 ~ 1000mW/ cm
2, handle 100 ~ 300 ℃ of sample temperatures, hydrogen diluted silane concentration SC＜5%, phosphorous gas and compare PH with silane
3/ SiH
4＜4%, N
1+Layer thickness is 5 ~ 30nm.
Said employing PECVD legal system is equipped with the N of amorphous silicon/microcrystal silicon transition region near amorphous silicon region
2The technological parameter of layer is: aura stimulating frequency 13.56 ~ 100MHz, reacting gas pressure 0.1 ~ 10 Torr, glow power density 10 ~ 1000mW/ cm
2, handle 100 ~ 300 ℃ of sample temperatures, hydrogen diluted silane concentration SC＜8%, phosphorous gas and compare PH with silane
3/ SiH
4＜4%, N
2Layer thickness is 20 ~ 40nm.
Beneficial effect of the present invention is:
Leave the central amorphous silicon top battery of atmosphere in before battery at the bottom of the preparation microcrystal silicon; With H or Ar Cement Composite Treated by Plasma top battery n layer; Eliminate the n laminar surface and generate the SiOx layer with the oxygen reaction in the atmosphere; The n layer for preparing high crystallization rate and high conductivity then can form good Ohmic contact with p type microcrystal silicon layer; The n layer of battery adopts the n type material of amorphous silicon/microcrystal silicon transition region near amorphous silicon at the bottom of the preparation microcrystal silicon; Can significantly improve conductivity of electrolyte materials; Strengthen the internal electric field of battery; Reduce the battery series resistance, improve the open circuit voltage of battery, thereby improve the conversion efficiency of amorphous silicon/microcrystalline silicon tandem solar cell.Whole prepared process is simple, be easy to control, the product fine rate is high, battery conversion efficiency is high; Only increase the equipment and the processing step of deposition micro crystal silicon battery, to existing silicon-base thin-film battery production line, upgrade to amorphous silicon/microcrystalline silicon tandem solar cell of new generation to existing amorphous silicon battery with minimum cost with regard to portable.
Description of drawings
Fig. 1 is the structural representation of this amorphous silicon/microcrystalline silicon tandem solar cell.
Among the figure: 1. glass substrate 2. nesa coating TCO 3. p type amorphous silicon Window layer P
1
4. amorphous silicon intrinsic layer I
15. n type amorphous silicon layer N
16. the n type microcrystal silicon layer N of high crystallization rate and high conductivity
1+7. p type microcrystal silicon layer P
28. microcrystalline silicon intrinsic layer I
2
9. amorphous silicon/microcrystal silicon transition region is near the n type layer N of amorphous silicon region
210. ZnO layer 11. metal Al layer 12. EVA layers 13. back-panel glass layer.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment technical scheme of the present invention is described further.
A kind of amorphous silicon/microcrystalline silicon tandem solar cell, structure are shown in accompanying drawing 1, by glass substrate 1, nesa coating TCO 2, p type amorphous silicon Window layer P
13, amorphous silicon intrinsic layer I
14, n type amorphous silicon layer N
15, the n type microcrystal silicon layer N of high conductivity and high crystallization rate
1+6, p type microcrystal silicon layer P
27, microcrystalline silicon intrinsic layer I
28, amorphous silicon/microcrystal silicon transition region is near the n type layer N of amorphous silicon region
29, ZnO layer 10, metal Al layer 11, EVA layer 12 and back-panel glass layer 13 are formed and are formed laminated construction successively, wherein with P
1-I
1-N
1Amorphous silicon battery is as the top battery of laminated cell, with P
2-I
2-N
2The microcrystal silicon battery is as the end battery of laminated cell, with ZnO and Al as composite back electrode.
The preparation process of said amorphous silicon/microcrystalline silicon tandem solar cell is following:
1) the nesa coating TCO on the glass substrate is carried out edging, washed with de-ionized water, oven dry after, with wavelength 1024nm laser grooving and scribing TCO, clean the TCO after the laser grooving and scribing;
2) adopt the PECVD legal system to be equipped with P
1-I
1-N
1Amorphous silicon battery;
3) vacuum breaker takes out amorphous silicon top battery, adopts the PECVD method with H or Ar Cement Composite Treated by Plasma amorphous silicon top battery N
1Layer;
4) adopt the PECVD legal system to be equipped with the N of high crystallization rate and high conductivity
1+Layer;
5) adopt the PECVD legal system to be equipped with P
2-I
2-N
2Battery at the bottom of the microcrystal silicon prepares N in amorphous silicon/microcrystal silicon transition region near amorphous silicon region
2Layer;
6) with wavelength 532nm laser grooving and scribing silicon thin film, isolate 39 sub-batteries;
7) with PVD method sputter ZnO and Al composite back electrode;
8) with wavelength 532nm laser grooving and scribing ZnO and Al composite back electrode separaant battery back electrode;
9) manufacture batteries insulation limit and welding lead, the lamination packaged battery gets final product.
In this embodiment, to amorphous silicon top battery N
1The layer with H or Ar plasma treatment, aura stimulating frequency 40.68MHz, reacting gas pressure 1.6 Torr, glow power density 85mW/ cm
2, handle 180 ℃ of sample temperatures, processing time 120S.The microcrystal silicon N of high crystallization rate and high conductivity
1+The preparation of layer is aura stimulating frequency 40.68MHz, reacting gas pressure 1.6 Torr, glow power density 90mW/cm
2, handle sample temperature: 180 ℃, hydrogen diluted silane concentration SC=0.8%, phosphorous gas compares PH with silane
3/ SiH
4=1.2%, thickness 20nm.
This preparation method's characteristics are after having deposited pin type amorphous silicon top battery; Be put into battery in another depositing device again and eliminate the n laminar surface with the generation of the oxygen reaction in atmosphere SiOx layer with H or Ar Cement Composite Treated by Plasma top battery n layer; The n type microcrystal silicon of back deposition one floor height crystallization rate and high conductivity can form good Ohmic contact with p type microcrystal silicon layer like this; The n layer of battery adopts the n type material of amorphous silicon/microcrystal silicon transition region near amorphous silicon region at the bottom of the preparation microcrystal silicon; Can significantly improve conductivity of electrolyte materials; Strengthen the internal electric field of battery; Reduce the battery series resistance, improve the open circuit voltage of battery, thereby improve the conversion efficiency of amorphous silicon/microcrystalline silicon tandem solar cell.
The amorphous silicon/microcrystalline silicon tandem solar cell of this embodiment preparation, battery size is 1024mmX635mm, the conversion efficiency of battery is 8.12%.
Claims (4)
1. an amorphous silicon/microcrystalline silicon tandem solar cell is characterized in that: by glass substrate, nesa coating TCO, p type amorphous silicon Window layer P
1, amorphous silicon intrinsic layer I
1, n type amorphous silicon layer N
1, high conductivity and high crystallization rate n type microcrystal silicon layer N
1+, p type microcrystal silicon layer P
2, microcrystalline silicon intrinsic layer I
2, amorphous silicon/microcrystal silicon transition region is near the n type layer N of amorphous silicon region
2, ZnO layer, metal Al layer, EVA layer and back-panel glass layer form and form laminated construction successively, wherein with P
1-I
1-N
1Amorphous silicon battery is as the top battery of laminated cell, with P
2-I
2-N
2The microcrystal silicon battery is as the end battery of laminated cell, with ZnO and Al as composite back electrode.
2. preparation method of amorphous silicon/microcrystalline silicon tandem solar cell according to claim 1 is characterized in that step is following:
1) the nesa coating TCO on the glass substrate is carried out edging, washed with de-ionized water, oven dry after, with wavelength 1024nm laser grooving and scribing TCO, clean the TCO after the laser grooving and scribing;
2) adopt the PECVD legal system to be equipped with P
1-I
1-N
1Amorphous silicon battery;
3) vacuum breaker takes out amorphous silicon top battery, adopts the PECVD method with H or Ar Cement Composite Treated by Plasma amorphous silicon battery N1 layer, and technological parameter is: aura stimulating frequency 13.56-100MHz, reacting gas pressure 0.1 ~ 10Torr, glow power density 10-1000mW/cm
2, handle 100-300 ℃ of sample temperature, H or Ar plasma treatment time 10-1000S;
4) adopt the PECVD legal system to be equipped with the N of high crystallization rate and high conductivity
1+Layer;
5) adopt the PECVD legal system to be equipped with P
2-I
2-N
2Battery at the bottom of the microcrystal silicon prepares N in amorphous silicon/microcrystal silicon transition region near amorphous silicon region
2Layer;
6) with wavelength 532nm laser grooving and scribing silicon thin film, isolate 39 sub-batteries;
7) with PVD method sputter ZnO and Al composite back electrode;
8) with wavelength 532nm laser grooving and scribing ZnO and Al composite back electrode and separaant battery back electrode;
9) manufacture batteries insulation limit and welding lead, the lamination packaged battery gets final product.
3. according to the preparation method of the said amorphous silicon/microcrystalline silicon tandem solar cell of claim 2, it is characterized in that: said employing PECVD legal system is equipped with the N of high crystallization rate and high conductivity
1+The technological parameter of layer is: aura stimulating frequency 13.56-100MHz, reacting gas pressure 0.1-10Torr, glow power density 10-1000mW/cm
2, handle 100-300 ℃ of sample temperature, hydrogen diluted silane concentration SC＜5%, phosphorous gas and compare PH with silane
3/ SiH
4＜4%, N
1+Layer thickness is 5-30nm.
4. according to the preparation method of the said amorphous silicon/microcrystalline silicon tandem solar cell of claim 2, it is characterized in that: said employing PECVD legal system is equipped with the N of amorphous silicon/microcrystal silicon transition region near amorphous silicon region
2The technological parameter of layer is: aura stimulating frequency 13.56 ~ 100MHz, reacting gas pressure 0.1-10Torr, glow power density 10-1000mW/cm
2, handle 100-300 ℃ of sample temperature, hydrogen diluted silane concentration SC＜8%, phosphorous gas and compare PH with silane
3/ SiH
4＜4%, N
2Layer thickness is 20-40nm.
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| CN103774116B (en) * | 2012-10-19 | 2016-09-21 | 陕西拓日新能源科技有限公司 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
| CN102983217B (en) * | 2012-11-21 | 2015-10-07 | 浙江正泰太阳能科技有限公司 | Improving one's methods and structure of solar cell properties |
| CN103022255B (en) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | Method for preparing ZnO/Al film on solar cell without introduced electrode |
| CN103078012A (en) * | 2013-02-04 | 2013-05-01 | 福建铂阳精工设备有限公司 | Method for improving photoelectric conversion efficiency of silica-based thin film solar cell |
| CN103647002B (en) * | 2013-10-31 | 2016-03-02 | 新奥光伏能源有限公司 | A kind of solar cell and preparation method thereof |
| CN104377268A (en) * | 2014-07-01 | 2015-02-25 | 安徽旭腾光伏电力有限公司 | Solar cell panel and crystal silicon wafer thereof |
| CN111554762A (en) * | 2020-05-05 | 2020-08-18 | 河南工业职业技术学院 | Amorphous silicon/microcrystalline silicon laminated solar cell and manufacturing method thereof |
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| CN101707224A (en) * | 2009-11-03 | 2010-05-12 | 彭祥军 | Flexible amorphous silicon film solar cell and preparation method thereof |
| CN201708163U (en) * | 2010-03-12 | 2011-01-12 | 河南阿格斯新能源有限公司 | Thin-film solar cell film system and thin-film solar cell |
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| CN101707224A (en) * | 2009-11-03 | 2010-05-12 | 彭祥军 | Flexible amorphous silicon film solar cell and preparation method thereof |
| CN201708163U (en) * | 2010-03-12 | 2011-01-12 | 河南阿格斯新能源有限公司 | Thin-film solar cell film system and thin-film solar cell |
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