CN203325950U - Multi-band-gap double-face light-transmission solar cell - Google Patents
Multi-band-gap double-face light-transmission solar cell Download PDFInfo
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- CN203325950U CN203325950U CN2013203066406U CN201320306640U CN203325950U CN 203325950 U CN203325950 U CN 203325950U CN 2013203066406 U CN2013203066406 U CN 2013203066406U CN 201320306640 U CN201320306640 U CN 201320306640U CN 203325950 U CN203325950 U CN 203325950U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a multi-band-gap double-face light-transmission solar cell. The cell comprises a monocrystalline silicon substrate. The front face and the back face of the monocrystalline silicon substrate are respectively sequentially provided with a first intermediate layer with a band gap ranging from 1.12eV to 1.6eV, a second intermediate layer with a band gap ranging from 1.6eV to 2.0eV, a first transparent conducting layer with a band gap ranging from 2.0eV to 3.0eV, a second transparent conducting layer with a band gap larger than 3.0eV and gate line electrodes from the inside out. The first intermediate layer is made of uc-Si:H or a-Si:H materials. The second intermediate layer is made of one kind of materials selected from amorphous silicon materials, amorphous silicon carbon materials and amorphous silicon germanium materials. The first transparent conducting layer is made of zinc oxide or zinc selenide materials. The second transparent conducting layer is made of gallium nitride materials, or silicon carbide materials or zinc oxide materials. The band gap of each layer of the cell is gradually decreasing from the light incidence direction. The light absorption is increased. Meanwhile, the interface defect state density can be alleviated. The photoelectric conversion efficiency of the cell is thus improved.
Description
Technical field
The utility model relates to a kind of solar cell, particularly relates to a kind of multi-band gap transparent two sides solar cell, belongs to technical field of solar cell manufacturing.
Background technology
At present, the common problem of solar cell is that the battery manufacture cost is higher and electricity conversion is lower.Heterojunction refers to the knot consisted of two kinds of different materials, a good heterojunction requires to have little interface state density, high interface state density can make the electrical properties of heterojunction deteriorated, because the difference of the band gap width of different materials can make on interface to produce many dangling bonds, form the localized level of electronics, interface state density increases, thereby affects carrier transport, photoelectric characteristic and the luminescent properties etc. of heterojunction.
The utility model content
The purpose of this utility model is to provide a kind of multi-band gap transparent two sides solar cell, increases light absorption and has also reduced the boundary defect density of states simultaneously, thereby improve battery performance.
For solving the problems of the technologies described above, the technical solution of the utility model is such, a kind of multi-band gap transparent two sides solar cell, it is characterized in that, this battery comprises monocrystalline substrate, be provided with successively from inside to outside at described monocrystalline substrate tow sides the first intermediate layer that band gap is 1.12～1.6eV, the second intermediate layer that band gap is 1.6～2.0eV, the first transparency conducting layer that band gap is 2.0～3.0eV, band gap > the second transparency conducting layer of 3.0eV, gate line electrode, described the first intermediate layer material is uc-Si:H or a-Si:H, described the second intermediate layer material is amorphous silicon, non-crystal silicon carbon, a kind of in amorphous silicon germanium, described the first electrically conducting transparent layer material is zinc oxide or zinc selenide, described the second electrically conducting transparent layer material is gallium nitride, carborundum, a kind of in zinc oxide.
Preferably, described monocrystalline substrate thickness is 180～250 μ m.
Preferably, described monocrystalline substrate band gap is 1.1～1.12eV.
Preferably, described the first intermediate layer thickness is 10cm.
Preferably, described the second intermediate layer thickness is 8nm.
Preferably, described gate line electrode material is Ag or Cu.
Preferably, described gate line electrode thickness 10～15um.
The advantage of technical scheme provided by the utility model is, from the light incident direction, each layer of band gap reduces successively, so both can ensure abundant light and enter inside battery, and increased light absorption simultaneously, each layer of band gap continually varying reduced the boundary defect density of states, thereby improved the photoelectric conversion efficiency of battery.
The accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but not as to restriction of the present utility model.
Battery structure of the present utility model as shown in Figure 1, band gap is 1.1eV, monocrystalline substrate 1 tow sides that thickness is 180 μ m are that band gap is 1.12eV from inside to outside successively, the first intermediate layer 2 that thickness is 10cm, its material is that uc-Si:H, band gap are 1.6eV, the second intermediate layer 3 that thickness is 8nm, its material is the first transparency conducting layer 4 that amorphous silicon, band gap are 2.0eV, its material is zinc oxide, band gap > the second transparency conducting layer 5 of 3.0eV, its material is the gate line electrode 6 that gallium nitride, material are Ag.
The battery structure of another embodiment is, band gap is 1.11eV, monocrystalline substrate 1 tow sides that thickness is 200 μ m are that band gap is 1.42eV from inside to outside successively, the first intermediate layer 2 that thickness is 10cm, its material is that uc-Si:H, band gap are 1.8eV, the second intermediate layer 3 that thickness is 8nm, its material is the first transparency conducting layer 4 that non-crystal silicon carbon, band gap are 2.6eV, its material is zinc oxide, band gap > the second transparency conducting layer 5 of 3.0eV, its material is the gate line electrode 6 that carborundum, material are Cu.
Also have the battery structure of an embodiment to make, band gap is 1.12eV, monocrystalline substrate 1 tow sides that thickness is 250 μ m are that band gap is 1.6eV from inside to outside successively, the first intermediate layer 2 that thickness is 10cm, its material is that a-Si:H, band gap are 2.0eV, the second intermediate layer 3 that thickness is 8nm, its material is the first transparency conducting layer 4 that amorphous silicon germanium, band gap are 3.0eV, its material is zinc selenide, band gap > the second transparency conducting layer 5 of 3.0eV, its material is the gate line electrode 6 that zinc oxide, material are Ag.
The preparation process of above-described embodiment is as follows, and the HF solution cleaning twin polishing monocrystalline substrate with 1% is packed it into rapidly in 1,2 minute in vacuum chamber; In vacuum chamber, vacuum reaches 10
-5Pa, process approximately 10～20s of monocrystalline substrate 1 with atomic hydrogen; Take hydrogen, silane is reacting gas with the uc-Si:H of the about 10cm of PECVD method deposit thickness or the first intermediate layer 2 of a-Si:H; Take hydrogen, silane, phosphine, methane or germane as reacting gas with PECVD or HWCVD the second intermediate layer 3 according to the about 8nm of condition deposit thickness of deposition of amorphous silicon or non-crystal silicon carbon or amorphous silicon germanium thin film; Take Zn or ZnSn alloy is evaporation source, and oxygen is as reacting gas, and it is the first transparency conducting layer 4 that the high purity oxygen gas that passes into 8～10sccm to vacuum chamber meets with the vacuum evaporation technique preparation zinc oxide or the zinc selenide layer that band gap requires; Take hydrogen, silane, methane as reacting gas with the standby satisfactory carborundum of PECVD legal system or take Zn as evaporation source, oxygen, as reacting gas, passes into the approximately high purity oxygen gas of 10～20sccm to vacuum chamber and meets the zinc oxide of band gap requirement as the second transparency conducting layer 5 with the vacuum evaporation technique preparation; Take metal A g or Cu as evaporation source, adopt the thermal evaporation techniques in conjunction with mask plate to prepare approximately Ag or the Cu gate line electrode 6 of 10～15um thickness.
Claims (7)
1. a multi-band gap transparent two sides solar cell, it is characterized in that, this battery comprises monocrystalline substrate, be provided with successively from inside to outside at described monocrystalline substrate (1) tow sides the first intermediate layer (2) that band gap is 1.12～1.6eV, the second intermediate layer (3) that band gap is 1.6～2.0eV, the first transparency conducting layer (4) that band gap is 2.0～3.0eV, band gap > the second transparency conducting layer (5) of 3.0eV, gate line electrode (6), described the first intermediate layer (2) material is uc-Si:H or a-Si:H, described the second intermediate layer (3) material is amorphous silicon, non-crystal silicon carbon, a kind of in amorphous silicon germanium, described the first transparency conducting layer (4) material is zinc oxide or zinc selenide, described the second transparency conducting layer (5) material is gallium nitride, carborundum, a kind of in zinc oxide.
2. multi-band gap transparent two sides solar cell according to claim 1, it is characterized in that: described monocrystalline substrate (1) thickness is 180～250 μ m.
3. multi-band gap transparent two sides solar cell according to claim 1, it is characterized in that: described monocrystalline substrate (1) band gap is 1.1～1.12eV.
4. multi-band gap transparent two sides solar cell according to claim 1, it is characterized in that: described the first intermediate layer (2) thickness is 10cm.
5. multi-band gap transparent two sides solar cell according to claim 1, it is characterized in that: described the second intermediate layer (3) thickness is 8nm.
6. multi-band gap transparent two sides solar cell according to claim 1, it is characterized in that: described gate line electrode (6) material is Ag or Cu.
7. multi-band gap transparent two sides solar cell according to claim 1, is characterized in that: described gate line electrode (6) thickness 10～15um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203066406U CN203325950U (en) | 2013-05-30 | 2013-05-30 | Multi-band-gap double-face light-transmission solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203066406U CN203325950U (en) | 2013-05-30 | 2013-05-30 | Multi-band-gap double-face light-transmission solar cell |
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| CN203325950U true CN203325950U (en) | 2013-12-04 |
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| CN2013203066406U Expired - Fee Related CN203325950U (en) | 2013-05-30 | 2013-05-30 | Multi-band-gap double-face light-transmission solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337545A (en) * | 2013-05-30 | 2013-10-02 | 国电光伏有限公司 | Multi-bandgap double face light transmission solar cell |
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2013
- 2013-05-30 CN CN2013203066406U patent/CN203325950U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337545A (en) * | 2013-05-30 | 2013-10-02 | 国电光伏有限公司 | Multi-bandgap double face light transmission solar cell |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131204 Termination date: 20160530 |