CN101807618B - Novel laminated film solar cell and manufacturing method thereof - Google Patents
Novel laminated film solar cell and manufacturing method thereof Download PDFInfo
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- CN101807618B CN101807618B CN2010101386237A CN201010138623A CN101807618B CN 101807618 B CN101807618 B CN 101807618B CN 2010101386237 A CN2010101386237 A CN 2010101386237A CN 201010138623 A CN201010138623 A CN 201010138623A CN 101807618 B CN101807618 B CN 101807618B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 239000011787 zinc oxide Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 13
- 239000013081 microcrystal Substances 0.000 claims description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 239000005049 silicon tetrachloride Substances 0.000 claims description 3
- 150000003752 zinc compounds Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of film solar cells, in particular to a laminated film solar cell and a manufacturing method thereof. The laminated film solar cell comprises a glass substrate, a lower electrode layer, a lower sub-cell layer, a middle layer, an upper sub-cell layer and an upper electrode layer, wherein each film layer is sequentially deposited on the glass substrate by adopting different technical methods; the lower electrode layer is a TCO film layer; the lower sub-cell layer comprises a P-type amorphous silicon layer, an intrinsic amorphous silicon layer and a N-type amorphous silicon layer; the middle layer is a zinc oxide (ZnO) buffer layer; the upper sub-cell layer comprises a P-type microcrystalline silicon layer, a polycrystalline silicon layer and a N-type polycrystalline silicon layer; and the upper electrode layer is a ZnO/Al transparent conductive oxide layer. In the invention, materials with different forbidden gaps are used for respectively preparing the upper sub-cell layer and the lower sub-cell layer, thereby widening the spectral absorption range, effectively improving the photoelectric transformation efficiency and reducing the production cost. The invention has the obvious advantages of low cost, good effect, and the like.
Description
Technical field
The present invention relates to technical field of thin-film solar, specifically a kind of manufacture method of overlapping thin film solar battery.
Background technology
As everyone knows; along with increasingly sharpening of global energy crisis; solar energy is as a kind of cleaning; the reproducible energy; more and more receive publicity in the world; wherein; photovoltaic generation is extensive; utilize one of most important means of solar energy economically; solar module is topmost parts of realizing opto-electronic conversion; existing market is that what to occupy main market is crystal silicon solar energy battery; account for about 80% of the whole solar cell market share, all the other are then occupied by the thin-film solar cells that with amorphous silicon and CIGS solar cell is representative.Be subjected to raw material restrictions and preparation technology's influence, crystal silicon cell has been difficult to improve conversion efficiency again and reduce cost, and each state has all turned to research emphasis in the research and development of low cost, high efficiency, large-area thin-film solar cells at present.
Thin-film solar cells is to enclose thickness on glass, stainless steel or the plastic in cheapness to have only several microns photosensitive material to make.Compare with crystal silicon solar energy battery, that thin-film solar cells has is few, in light weight with material, smooth in appearance, advantage such as easy for installation.As far back as early 1970s, Carlson etc. have just begun the development work to thin-film solar cells.The hull cell that can carry out industrialization large-scale production at present mainly contains 3 kinds: silicon-based film solar cells, copper-indium-galliun-selenium film solar cell (CIGS), cadmium telluride diaphragm solar battery (CdTe).Though thin-film solar cells occurs already, because low, the attenuation rate (photic fading rate) of photoelectric conversion efficiency does not cause enough concerns of industry a few years ago than problems such as height, occupation rate of market is very low.If can traditional film solar battery structure be improved, widen its spectral absorption scope and conversion efficiency, with increasing the market competitiveness of thin-film solar cells greatly, have good application prospects.
Summary of the invention
The present invention proposes a kind of photoelectric conversion efficiency that can significantly improve solar cell in order to overcome the deficiency that the conventional films solar cell exists, and reduces production costs, and result of use is the manufacture method of overlapping thin film solar battery really well.
A kind of overlapping thin film solar battery is characterized in that by glass substrate, lower electrode layer, descends sub-battery layers, intermediate layer, last sub-battery layers and upper electrode layer stack to constitute.
Lower electrode layer and intermediate layer are including transparent conducting oxide layer among the present invention, generally adopt zinc oxide film, and its thickness range is 5-10nm.
Sub-battery layers is made of P type amorphous silicon layer, amorphous silicon layer, N type amorphous silicon layer under among the present invention.
Going up sub-battery layers among the present invention is made of P type microcrystal silicon layer, polysilicon layer, N type polysilicon layer.
A kind of manufacture method of overlapping thin film solar battery is characterized in that comprising the steps:
Step 1: adopt online CVD method, preparation TCO transparent conductive oxide rete forms lower electrode layer on glass substrate,
Step 2: on lower electrode layer, be better than 10 in vacuum
-6In the vacuum chamber of holder, underlayer temperature is 200-250 ℃, and reaction pressure is under the condition of 600-1000 millitorr, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method, deposit P type amorphous silicon layer, amorphous silicon layer, N type amorphous silicon layer successively, form sub-battery layers down
Step 3: on following sub-battery layers, at underlayer temperature 200-300 ℃, under the condition of reaction pressure 600-800 millitorr, with organic Zinc compounds and nitrous oxide is source of the gas, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method, and the preparation zinc oxide film is as the intermediate layer
Step 4: on the zinc oxide intermediate layer, at underlayer temperature 200-300 ℃, reaction pressure 500-800 millitorr, radio-frequency power supply power is under the condition of 13.56MHZ, adopt silicon tetrachloride and hydrogen as source of the gas, adopt plasma reinforced chemical vapour deposition (PECVD) method, make P type microcrystal silicon layer, polysilicon layer, N type polysilicon layer successively, sub-battery layers in the formation
Step 5: on last sub-battery layers, adopt magnetically controlled sputter method, preparation ZnO/Al upper electrode layer.
Substrate in the step 1 of the present invention can adopt pure white glass plate, and lower electrode layer is an including transparent conducting oxide layer, generally adopts zinc oxide film, and its thickness range is 5-10nm.。
In the making of sub-battery layers, the thickness of P type amorphous silicon layer is 20-30nm under described in the step 2 of the present invention, and the thickness of amorphous silicon layer is 100-200nm, and the thickness of N type amorphous silicon layer is 15-20nm.
The described intermediate layer of step 3 is an including transparent conducting oxide layer among the present invention, generally adopts zinc oxide film, and its thickness range is 5-10nm.
The thickness of P type microcrystal silicon layer is 20-50nm in the step 4 of the present invention, and the thickness of polysilicon layer is 100-300nm, and the thickness of N type polysilicon layer is 80-100nm.
The described upper electrode layer of step 5 is doped zinc oxide aluminium (ZnO/Al) among the present invention.
The present invention adopts the material preparation of different energy gaps to prepare sub-battery layers and following two sub-batteries of sub-battery layers respectively, widened the spectral absorption scope, improve photoelectric conversion efficiency effectively, reduced production cost, had remarkable advantages such as cost is low, effective.
Description of drawings:
Accompanying drawing is a structural representation of the present invention.
Reference numeral: substrate 1, lower electrode layer 2, P type amorphous silicon layer 3, amorphous silicon layer 4, N type amorphous silicon layer 5, intermediate layer 6, P type microcrystal silicon layer 7, polysilicon layer 8, N type polysilicon layer 9, upper electrode layer 10.
Embodiment:
A kind of novel laminated film solar cell is made of glass substrate 1, lower electrode layer 2, time sub-battery layers, intermediate layer 6, last sub-battery layers, upper electrode layer 10.Each rete adopts different processes to be deposited on successively on the glass substrate 1 respectively.
Sub-battery layers is made of P type amorphous silicon layer 3, amorphous silicon layer 4, N type amorphous silicon layer 5 under among the present invention.
Going up sub-battery layers among the present invention is made of P type microcrystal silicon layer 7, polysilicon layer 8, N type polysilicon layer 9.
A kind of manufacture method of novel laminated film solar cell is characterized in that comprising the steps:
Step 1: adopt online CVD method, preparation TCO transparent conductive oxide rete forms lower electrode layer 2 on glass substrate 1,
Step 2: on lower electrode layer 2, be better than 10 in vacuum
-6In the vacuum chamber of holder, underlayer temperature is 200-250 ℃, and reaction pressure is under the condition of 600-1000 millitorr, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method, deposit P type amorphous silicon layer 3, amorphous silicon layer 4, N type amorphous silicon layer 5 successively, form sub-battery layers down
Step 3: on following sub-battery layers, at underlayer temperature 200-300 ℃, under the condition of reaction pressure 600-800 millitorr, with organic Zinc compounds and nitrous oxide is source of the gas, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method, and the preparation zinc oxide film is as intermediate layer 6
Step 4: on the zinc oxide intermediate layer, at underlayer temperature 200-300 ℃, reaction pressure 500-800 millitorr, radio-frequency power supply power is under the condition of 13.56MHZ, adopt silicon tetrachloride and hydrogen as source of the gas, adopt plasma reinforced chemical vapour deposition (PECVD) method, make P type microcrystal silicon layer 7, polysilicon layer 8, N type polysilicon layer 9 successively, sub-battery layers in the formation
Step 5: on last sub-battery layers, adopt magnetically controlled sputter method, preparation ZnO/Al upper electrode layer 10.
Substrate in the step 1 of the present invention can adopt pure white glass plate, and lower electrode layer is an including transparent conducting oxide layer, generally adopts zinc oxide film, and its thickness range is 5-10nm.。
In the making of sub-battery layers, the thickness of P type amorphous silicon layer is 20-30nm under described in the step 2 of the present invention, and the thickness of amorphous silicon layer is 100-200nm, and the thickness of N type amorphous silicon layer is 15-20nm.
The described intermediate layer of step 3 is an including transparent conducting oxide layer among the present invention, generally adopts zinc oxide film, and its thickness range is 5-10nm.
The thickness of P type microcrystal silicon layer is 20-50nm in the step 4 of the present invention, and the thickness of polysilicon layer is 100-300nm, and the thickness of N type polysilicon layer is 80-100nm.
The described upper electrode layer of step 5 is doped zinc oxide aluminium (ZnO/Al) among the present invention.
The present invention adopts the material preparation of different energy gaps to prepare sub-battery layers and following two sub-batteries of sub-battery layers respectively, widened the spectral absorption scope, improve photoelectric conversion efficiency effectively, reduced production cost, had remarkable advantages such as cost is low, effective.
Claims (5)
1. the manufacture method of an overlapping thin film solar battery, it is characterized in that by glass substrate, lower electrode layer, descend sub-battery layers, intermediate layer, last sub-battery layers and upper electrode layer stack to constitute, sub-battery layers is made of P type amorphous silicon layer, amorphous silicon layer, N type amorphous silicon layer down, go up sub-battery layers and be made of P type microcrystal silicon layer, polysilicon layer, N type polysilicon layer, its processing step is as follows:
Step 1: adopt online CVD method, preparation TCO transparent conductive oxide rete forms lower electrode layer on glass substrate,
Step 2: on lower electrode layer, be better than 10 in vacuum
-6In the vacuum chamber of holder, underlayer temperature is 200-250 ℃, and reaction pressure is under the condition of 600-1000 millitorr, using plasma strengthens chemical vapor deposition (PECVD) method, deposit P type amorphous silicon layer, amorphous silicon layer, N type amorphous silicon layer successively, form sub-battery layers down
Step 3: on following sub-battery layers, at underlayer temperature 200-300 ℃, under the condition of reaction pressure 600-800 millitorr, with organic Zinc compounds and nitrous oxide is source of the gas, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method, and the preparation zinc oxide film is as the intermediate layer
Step 4: on the zinc oxide intermediate layer, at underlayer temperature 200-300 ℃, reaction pressure 500-800 millitorr, the radio-frequency power supply frequency is under the condition of 13.56MHZ, utilize silicon tetrachloride and hydrogen as source of the gas, adopt plasma reinforced chemical vapour deposition (PECVD) method, make P type microcrystal silicon layer, polysilicon layer, N type polysilicon layer successively, sub-battery layers in the formation
Step 5: on last sub-battery layers, adopt magnetically controlled sputter method, preparation doped zinc oxide aluminium upper electrode layer.
2. the manufacture method of a kind of overlapping thin film solar battery according to claim 1 is characterized in that the substrate in the step 1 adopts pure white glass plate.
3. the manufacture method of a kind of overlapping thin film solar battery according to claim 1, it is characterized in that in the making of following sub-battery layers described in the step 2, the thickness of P type amorphous silicon layer is 20-30nm, and the thickness of amorphous silicon layer is 100-200nm, and the thickness of N type amorphous silicon layer is 20nm.
4. the manufacture method of a kind of overlapping thin film solar battery according to claim 1 is characterized in that the described intermediate layer of step 3 using plasma strengthens the ZnO layer of chemical gaseous phase depositing process preparation, and its thickness range is 5-10nm.
5. the manufacture method of a kind of overlapping thin film solar battery according to claim 1 is characterized in that the thickness of the described P type of step 4 microcrystal silicon layer is 20-50nm, and the thickness of polysilicon layer is 100-300nm, and the thickness of N type polysilicon layer is 80-100nm.
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| CN2010101386237A CN101807618B (en) | 2010-04-03 | 2010-04-03 | Novel laminated film solar cell and manufacturing method thereof |
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| CN2010101386237A CN101807618B (en) | 2010-04-03 | 2010-04-03 | Novel laminated film solar cell and manufacturing method thereof |
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| CN101807618A CN101807618A (en) | 2010-08-18 |
| CN101807618B true CN101807618B (en) | 2011-12-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983217A (en) * | 2012-11-21 | 2013-03-20 | 浙江正泰太阳能科技有限公司 | Improved method of solar battery performance and structure of solar battery |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157614B (en) * | 2011-01-26 | 2013-01-30 | 中国科学院半导体研究所 | Method for improving performance of amorphous silicon/microcrystalline silicon tandem solar cell |
| CN103137778A (en) * | 2011-11-25 | 2013-06-05 | 吉富新能源科技(上海)有限公司 | High-efficiency double-knot thin film solar cell technique for internal light secondary scattering |
| CN102446995A (en) * | 2011-12-09 | 2012-05-09 | 中山大学 | Hybrid solar battery module and manufacturing method thereof |
| CN103022255B (en) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | Method for preparing ZnO/Al film on solar cell without introduced electrode |
| CN103219429B (en) * | 2013-04-22 | 2016-06-01 | 浙江正泰太阳能科技有限公司 | Lamination solar cell and its preparation method |
| CN106057952A (en) * | 2016-08-22 | 2016-10-26 | 四川英发太阳能科技有限公司 | Novel crystalline silicon solar cell and preparation method thereof |
| CN115995512A (en) * | 2023-02-08 | 2023-04-21 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101162740A (en) * | 2006-10-13 | 2008-04-16 | 中国科学院上海技术物理研究所 | Wide band stack thin-film solar cell |
| KR20090081569A (en) * | 2008-01-24 | 2009-07-29 | 연세대학교 산학협력단 | Tandem silicon solar cells fabricated by solution processing |
| KR20100021845A (en) * | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | Stacked type solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983217A (en) * | 2012-11-21 | 2013-03-20 | 浙江正泰太阳能科技有限公司 | Improved method of solar battery performance and structure of solar battery |
| CN102983217B (en) * | 2012-11-21 | 2015-10-07 | 浙江正泰太阳能科技有限公司 | Improving one's methods and structure of solar cell properties |
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