CN101937944A - Preparation method of double-sided passivated crystalline silicon solar cell - Google Patents
Preparation method of double-sided passivated crystalline silicon solar cell Download PDFInfo
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Abstract
The invention discloses a preparation method of a double-sided passivated crystalline silicon solar cell, belonging to the technical field of photovoltaic power generation. The preparation method comprises the following steps of: firstly, respectively carrying out surface precleaning and surface texturing on P-shaped single crystal silicon and a polycrystalline silicon wafer by adopting an alkaline solution and an acid solution; secondly, diffusing by using phosphorus oxychloride as a diffusion source to form a PN junction; thirdly, removing a phosphosilicate glass on the surface of the silicon wafer by adopting a chemical wet method, and etching the edge of the silicon wafer by adopting a plasma; fourthly, preparing a silicon nitride film on the surface of an emitting region of a P-type silicon wafer by adopting a plasma enhanced chemical vapor deposition method; fifthly, preparing a mixed phase film material of hydrogenated microcrystalline silicon and amorphous silicon by adopting a hot filament chemical vapor deposition method, depositing a film at one side of the P-type silicon wafer, and passivating the defects and a dangling bond on the surface of the P-type silicon wafer; and sixthly, sintering a screen printing back electrode and a screen printing positive electrode to form the solar cell. The invention lowers the probability of compounding photo-generated minority carriers on the back surface, enhances the long-wave light quantum efficiency and creates the conditions of transportation and collection of the photo-generated carriers.
Description
Technical field
That patent of the present invention relates to is the preparation method in a kind of photovoltaic power generation technology field, particularly relates to a kind of preparation method of crystal-silicon solar cell of passivation on double surfaces.
Background technology
The solar energy power generating industry development is very fast, and since two thousand seven Zhong Guo photovoltaic output occupies first place, the whole world always, and product type occupies nearly 90% the market share based on crystal silicon cell and assembly, and hull cell accounts for the market about 10%.Though Chinese photovoltaic manufacture the first, the photoelectric conversion efficiency of photovoltaic product is in medium level, lacks core technology.Strengthen the core competitiveness of photovoltaic product in the world market, must research and develop new technology, improve the opto-electronic conversion ability of photovoltaic cell and assembly, reduce manufacturing cost.
Large tracts of land high efficiency crystal-silicon solar cell mainly contains the full back side contact battery of U.S. Sunpower company at present, and in June, 2010, report detected through American National regenerative resource laboratory (NREL), and its battery conversion efficiency is to 24.2%.The HIT battery of Japan Sanyo, conversion efficiency reaches 23% (100.4cm2, AIST test, 2008).The Pluto battery of China Suntech, high conversion efficiency reached more than 19% in 2009, and technology mainly is based on the breadboard PERL battery structure of the Martin Green of University of New South Wales prototype, carries out industrialization development.The research and development of crystal-silicon solar cell and developing direction mainly concentrate on following both direction: high efficiency and cost degradation.Especially high efficiency not only can reduce cost, and also is the key point of solar cell competition and sustainable development.External solar cell company is by accumulation and exploitation for a long time, the high efficiency solar cell that has released one after another and differed from one another, such as, the HIT battery of SANYO GS (Sanyo), the technology that adopts crystalline silicon and thin film silicon to combine, can realize the high conversion efficiency battery under low temperature process, this technology has only Sanyo to have at present in the world, and the industrialization battery efficiency is up to 19-20%; U.S. SunPower company has successfully released the unique emitter junction and the efficient solar battery of point contact electrode by the unremitting effort more than 20 years; The Mitsubishi Electric of Japan, KYOCERA, Sharp etc. have also developed the high efficiency solar cell of special surface wool manufacturing and surrounding electric poles (Wrap-through) structure.STP is developed Pluto high efficiency solar battery structure at home, and battery efficiency also improves in the active development new technology in other solar cell company.
The crystal-silicon solar cell product has comparative advantage in photovoltaic market at present, and about 50% cost comes from crystal silicon chip in this series products.For reducing cost, silicon wafer thickness is more and more thinner, and for large-area battery thin silicon sheet, surface recombination can be very serious, and this will cause the battery efficiency loss.As seen the recombination-rate surface that reduces large tracts of land thin silicon sheet is to improve the important means of battery efficiency.Passivating technique commonly used at present is that the chemical gas-phase deposition system that using plasma strengthens prepares silicon nitride film, and perhaps the silica passivating film is rich in highdensity positive charge in these films, is fit to passivation N type silicon chip, is not suitable for the surface passivation of P type silicon chip.The employing hot-wire chemical gas-phase deposition method that this patent relates to prepares the hydrosilyl group film P type silicon chip is possessed excellent inactivating performance under cryogenic conditions, the aluminium of zygomite reticulated printing is carried on the back the field simultaneously, can promote the thermal stability of silicon thin film, stop a large amount of effusions of hydrogen in the sintering process, thereby silica-base film can be used as the important means on passivation crystalline silicon back of the body surface, improve the spectral response of battery, improve the photoelectric conversion efficiency of battery in longwave optical.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, a kind of preparation method of crystal-silicon solar cell of passivation on double surfaces is provided, the present invention combines the characteristics that crystalline silicon and hydrosilyl group film do not contain a large amount of positive charges, under low temperature process, can realize effective passivation of P type silicon chip surface, reduce the probability of photoproduction minority carrier in back of the body surface recombination, improve the longwave optical quantum efficiency of battery, for photo-generated carrier transport and collection creates conditions.Front using plasma chemical vapour deposition (CVD) (PECVD) the systems produce silicon nitride film of this external N type crystalline silicon (promptly passing through the P type crystal silicon sheet of phosphorous diffusion), utilize the hydrogen passivation of silicon nitride and the field passivation of fixed positive charge can improve the spectral response of battery, thereby realize the passivation on double surfaces of crystal silicon battery at shortwave.
The present invention is achieved by the following technical solutions:
The present invention includes following steps:
1. adopt aqueous slkali and acid solution respectively p type single crystal silicon and polysilicon chip to be carried out surperficial prerinse and surperficial texture, make the silicon chip surface cleaning, and, reduce the surface optical reflectivity at the etch pit that monocrystalline silicon surface formation pyramid structure forms at polysilicon surface.
Described aqueous slkali and acid solution, aqueous slkali are NaOH, KOH; Acid solution is HNO
3, HF, HCl.
The about 200 μ m of described used silicon wafer thickness, area 125x125mm
2Standard side's sheet, resistivity 1 Ω cm.
Described surperficial prerinse and surperficial texture, the acid solution of usefulness 1-5% is removed the SiO of silicon chip surface
2Layer about 80 ℃ prepares Pyramid matte in concentration less than 3% aqueous slkali to the p type single crystal silicon sheet, adopts the deionized water ultrasonic cleaning then, and dries up.
2. diffuse to form PN junction with phosphorus oxychloride as diffuse source.
Described diffusion is meant: adopt tubular diffusion furnace, as taking source gas, diffusion phosphorus forms N type emission layer above the p type monocrystalline silicon piece after making herbs into wool with nitrogen, thereby forms PN junction.
3. adopt wet chemical to remove the phosphorosilicate glass of silicon chip surface, and using plasma is with the silicon chip edge etching.
Described wet chemical is lower than 5% HF solution for adopting concentration.
4. using plasma enhancing process for chemical vapor deposition of materials with via (PECVD) prepares antireflective coating and the passivating film of silicon nitride film as battery on N type silicon;
Described plasma enhanced chemical vapor deposition method is meant: on the emitter region of silicon chip, the mist of silane and ammonia than under 1: 4 condition, depositing temperature 400-450 ℃, is deposited the thick hydrogenated silicon nitride film of about 70-90nm.
The optical energy gap of described microcrystalline hydrogenated silicon film is 1.6-2.1eV, and crystallite dimension is 30-80nm, and crystalline state is than being 5-40%, and mixing phase growth for Thin Film speed is
5. the mixing of adopting hot filament CVD (HWCVD) preparation microcrystalline hydrogenated silicon and amorphous silicon is thin-film material mutually, P type silicon chip one side is arrived in thin film deposition, the defective and the dangling bonds of passivation P type silicon face, reduce photo-generated carrier and carrying on the back the compound of surface, improve photogenerated current and open circuit voltage, strengthen the opto-electronic conversion ability of battery.
Described employing hot filament CVD, be meant: P type silicon chip back of the body surface is 55: 1 at silane and hydrogen gas stream ratio, deposition pressure 10pa, under the condition that underlayer temperature is 200 ℃, deposit thickness is 70-90nm silica-base film (being the mixing film mutually of microcrystalline hydrogenated silicon and amorphous silicon).
6. adopt silk screen printing back of the body surface field, backplate, silk screen printing front electrode, behind oversintering, form solar cell.
Described silk screen printing backplate is: adopt silk-screen printing technique printed back aluminium paste to form back of the body field and back electrode.
Described silk screen printing front electrode is: adopt silk-screen printing technique printed silver slurry to form positive electrode.
Described being sintered to: in chain-type sintering furnace, carry out sintering, the about 720-800 of sintering peak temperature ℃, metal electrode and silicon are formed ohmic contact, finally finish the solar cell preparation.
The present invention has determined that solar cell has stronger spectral response in the longwave optical scope owing to the microcrystalline hydrogenated silicon thin-film material is arranged as the cell backside passivation layer, means under the same photoirradiation intensity that this structure battery power output will be bigger.In addition, used HWCVD system equipment cost is low, and technology is simple and film-forming temperature is low, and energy consumption is little, process window is big, the band gap and the degree of crystallization of microcrystalline hydrogenated silicon film are adjustable, and optical energy gap is in the 1.6-2.1eV scope, and the aluminium that combines with conventional silk-screen printing technique is carried on the back the field, can promote the thermal stability of silicon thin film, stop the effusion of hydrogen in the sintering process, microcrystalline silicon film can be used as the important structure on passivation crystalline silicon back of the body surface, guarantees higher hydrogen content and stability in the film.
Solar battery structure of the present invention is silicon nitride film/crystalline silicon NP knot/microcrystalline hydrogenated silicon film/aluminium back of the body field, this structure battery process processing procedure and conventional batteries process compatibility are very good, easy realization of industrialization, the cost that is increased is very low, but the output performance of battery has very big lifting, and the present invention simultaneously is subjected to the subsidy of the Shanghai City State Scientific and Technological Commission-Material Used International Technology cooperative fund source problem (No.08520741400).
Description of drawings
Fig. 1 is a passivation on double surfaces high efficiency crystal-silicon solar cell structural representation of the present invention;
Fig. 2 is the process schematic representation of solar cell of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: following examples have provided detailed execution mode and process being to implement under the prerequisite with the technical solution of the present invention, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, present embodiment adopts passivation on double surfaces high efficiency crystal-silicon solar cell version to describe execution mode and process in detail, among the figure: the hydrogenated silicon nitride film 1 of sensitive surface, N type emitter region 2, P type crystalline silicon 3, the mixing of microcrystalline hydrogenated silicon and amorphous silicon is film 4 mutually, aluminium back of the body field and electrode 5.
Embodiment
1. adopt the semiconductor cleaning to surface prerinse of p type single crystal silicon sheet and surperficial texture.The about 200 μ m of used silicon wafer thickness, area 125x125mm
2Standard side's sheet, resistivity 1 Ω cm, the hydrofluoric acid of the about 1-5% of usefulness is removed the SiO of silicon chip surface
2Layer.Next to the p type single crystal silicon sheet concentration less than the mixed solution of 3% NaOH and isopropyl alcohol (IPA) in about 80 ℃ preparation Pyramid matte.Adopt the deionized water ultrasonic cleaning then, and dry up with nitrogen.
2. adopt tubular diffusion furnace, as diffuse source, as taking source gas, diffusion phosphorus forms N type emission layer above the p type monocrystalline silicon piece after making herbs into wool with nitrogen, thereby forms PN junction, wherein emitter region square resistance 30-80 Ω/ with phosphorus oxychloride.
3. adopt concentration to be lower than the phosphorosilicate glass of 5% HF solution removal silicon chip surface, and using plasma is with the silicon chip edge etching.
4. on the emitter region of silicon chip, using plasma strengthens chemical vapor deposition (PECVD) system, and the mist of silane and ammonia than under 1: 4 condition, depositing temperature 400-450 ℃, is deposited the thick hydrogenated silicon nitride film of about 70-90nm.
5. hot filament CVD (HWCVD) is adopted on P type silicon chip back of the body surface, at silane and hydrogen gas stream ratio is 55: 1, and deposition pressure 10pa is under the condition that underlayer temperature is 200 ℃, depositing silicon base film (being the mixing film mutually of microcrystalline hydrogenated silicon and amorphous silicon), thickness is 70-90nm.
6. silk screen printing backplate: adopt silk-screen printing technique printed back aluminium paste to form back of the body field and back electrode.
7. silk screen printing front electrode: adopt silk-screen printing technique printed silver slurry to form positive electrode.
8. in chain-type sintering furnace, carry out sintering, the about 720-800 of sintering peak temperature ℃, metal electrode and silicon are formed ohmic contact, finally finish the solar cell preparation.
Present embodiment is to microcrystalline hydrogenated silicon thin film passivation surface of crystalline silicon dangling bonds and defective, adopt hot wire chemical vapor deposition (HWCVD) system under＜250 ℃ of cryogenic conditions, to prepare silicon thin film, by control process conditions (temperature, air pressure, time, power etc.), the mixing of acquisition microcrystalline hydrogenated silicon (μ c-Si:H) and amorphous silicon (a-Si:H) is thin-film material mutually, according to hydrogen at unstrpped gas (silane, hydrogen etc.) the ratio difference in, the crystallite dimension of microcrystalline hydrogenated silicon film is 30-80nm in mixing mutually, and crystalline state is than being 5-40%, and mixing phase growth for Thin Film speed is
Optical energy gap is 1.6-2.1eV, deposit this mixing phase film after the silicon chip minority carrier life time can improve about 90%.This mixing phase equipment for producing thin film is not expensive, the film deposition rate height, no plasma is to the bombardment damage of silicon face, the film crystalline state is bigger than adjustable scope, the material energy gap is big, hydrogen content is adjustable in the film, because of not containing a large amount of fixed positive charges in the film, so be fit to very much P type silicon face is carried out passivation.
As shown in Figure 1, the crystal-silicon solar cell structure of the passivation on double surfaces that present embodiment relates to, it is hydrogenated silicon nitride/crystalline silicon NP knot/microcrystalline hydrogenated silicon film/aluminium back of the body field, the depositing hydrogenated silicon nitride film of chemical vapour deposition (CVD) (PECVD) method that using plasma strengthens, antireflective coating and passivating film as the solar cell front surface, form the PN homojunction by conventional diffusion technology, the mixing of adopting HWCVD method deposition of hydrogenated amorphous silicon and microcrystal silicon on P type crystalline silicon back of the body surface is film mutually, surface passivated membrane as P type silicon, make aluminium back of the body field by silk-screen printing technique afterwards, the preceding electrode of battery and back electrode adopt conventional silk-screen printing technique to form alloy.This structure battery can effectively reduce the photoproduction minority carrier and carry on the back the compound of surface, and helps to improve the open circuit voltage and the short circuit current of solar cell, finally strengthens the photoelectric conversion efficiency of solar cell.
Present embodiment prepares microcrystalline hydrogenated silicon and amorphous silicon and mixes mutually that film comes passivation P type silicon face, present embodiment prepares the hydrogenated silicon nitride film and comes passivation N type silicon face, surface of crystalline silicon (front surface and rear surface) is after passivation, can improve the useful life of minority carrier, reduce the recombination probability of charge carrier, the formation of the preparation of electrode and the back of the body is screen printing technique cheaply, this passivation on double surfaces technology is extremely important to more and more thinner crystal-silicon solar cell, and the compatibility of technology and conventional batteries production line is very strong, its technological process as shown in Figure 2, can obviously improve the spectral response of battery, thereby improve the conversion efficiency of battery in the longwave optical part.
At first use chemical reagent (acid solution, aqueous slkali) to remove the affected layer of silicon chip surface, and texturing is carried out on the surface handled, purpose is the light capture ability that strengthens silicon chip surface.Next is to adopt POCl3 to form PN junction as diffuse source at P type silicon chip surface, after removing surperficial phosphorosilicate glass and Ke Bian technology, by the PECVD system under the temperature about 400-450 ℃ with silane and ammonia heating-decomposition-synthetic again, thereby obtain N type silicon face is had the hydrogenated silicon nitride film of passivation and minimizing light reflex, crystal silicon battery for passivation on double surfaces, also need in the HWCVD system, silane be decomposed by heating, under hydrogen participation effect, silicon thin film can be realized crystallization to a certain degree, and P type silicon chip surface is had passivation.Ensuing processing step is conventional screen printing electrode and alloying, finally forms crystal-silicon solar cell.
Present embodiment obtains the contrast of battery output parameter and common process battery parameter at table 1 on the P type CZ of 148.58cm2 area on battery manufacturing line monocrystalline silicon piece.Can find that from table 1 the present embodiment short-circuit current density increases by 1.1% relatively, open circuit voltage increases by 1.6% relatively, and conversion efficiency can promote about 2.9%.
The passivation on double surfaces battery of table 1 patent of the present invention and the contrast of common process battery parameter
| Battery types | Short-circuit current density (mA/cm2) | Open circuit voltage (V) | Fill factor, curve factor (%) | Conversion efficiency (%) |
| Conventional batteries | 35.6 | ?0.620 | 78.6 | 17.3 |
| The passivation on double surfaces battery | 36.0 | 0.630 | 78.6 | 17.8 |
Claims (10)
1. the preparation method of the crystal-silicon solar cell of a passivation on double surfaces is characterized in that, may further comprise the steps:
1. adopt aqueous slkali and acid solution respectively p type single crystal silicon and polysilicon chip to be carried out surperficial prerinse and surperficial texture, make the silicon chip surface cleaning, and form the etch pit that pyramid structure forms at polysilicon surface at monocrystalline silicon surface;
2. diffuse to form PN junction with phosphorus oxychloride as diffuse source;
3. adopt wet chemical to remove the phosphorosilicate glass of silicon chip surface, and using plasma is with the silicon chip edge etching;
4. using plasma enhancing process for chemical vapor deposition of materials with via prepares antireflective coating and the passivating film of silicon nitride film as battery on N type silicon;
5. adopt mixing that hot filament CVD prepares microcrystalline hydrogenated silicon and amorphous silicon thin-film material mutually, with thin film deposition to P type silicon chip one side, the defective and the dangling bonds of passivation P type silicon face;
6. adopt silk screen printing back of the body surface field, backplate, silk screen printing front electrode, behind oversintering, form solar cell.
2. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1 is characterized in that, described aqueous slkali and acid solution, aqueous slkali are NaOH, KOH; Acid solution is HNO
3, HF, HCl.
3. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1 is characterized in that, described used silicon wafer thickness 200 μ m, area 125x125mm
2Standard side's sheet, resistivity 1 Ω cm.
4. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1 is characterized in that, described surperficial prerinse and surperficial texture, and the acid solution of usefulness 1-5% is removed the SiO of silicon chip surface
2Layer about 80 ℃ prepares Pyramid matte in concentration less than 3% aqueous slkali to the p type single crystal silicon sheet, adopts the deionized water ultrasonic cleaning then, and dries up.
5. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1 is characterized in that, described diffusion, be meant: adopt tubular diffusion furnace, as taking source gas, diffusion phosphorus forms N type emission layer above the p type monocrystalline silicon piece after making herbs into wool with nitrogen, thereby forms PN junction.
6. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1 is characterized in that, described wet chemical is lower than 5% HF solution for adopting concentration.
7. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1, it is characterized in that, described plasma enhanced chemical vapor deposition method, be meant: on the N type silicon of the emitter region of silicon chip, with the mist of silane and ammonia than under 1: 4 condition, depositing temperature 400-450 ℃, deposit the thick hydrogenated silicon nitride film of about 70-90nm, key reflectance coating and passivating film as the battery front surface, the optical energy gap of this microcrystalline hydrogenated silicon film is 1.6-2.1eV, crystallite dimension is 30-80nm, and crystalline state is than being 5-40%, and mixing phase growth for Thin Film speed is
8. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1, it is characterized in that, described employing hot filament CVD, be meant: P type silicon chip back of the body surface, at silane and hydrogen gas stream ratio is 55: 1, and deposition pressure 10pa is under the condition that underlayer temperature is 200 ℃, deposit thickness is the 70-90nm silica-base film, as the passivating film on battery back of the body surface.
9. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1, it is characterized in that, described employing silk screen printing backplate, silk screen printing front electrode, wherein: the silk screen printing backplate is: adopt silk-screen printing technique printed back aluminium paste to form back of the body field and back electrode; The silk screen printing front electrode is: adopt silk-screen printing technique printed silver slurry to form positive electrode.
10. the preparation method of the crystal-silicon solar cell of passivation on double surfaces according to claim 1, it is characterized in that described being sintered to: in chain-type sintering furnace, carry out sintering, the about 720-800 of sintering peak temperature ℃, metal electrode and silicon are formed ohmic contact, finally finish the solar cell preparation.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040112426A1 (en) * | 2002-12-11 | 2004-06-17 | Sharp Kabushiki Kaisha | Solar cell and method of manufacturing the same |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN101728459A (en) * | 2009-11-18 | 2010-06-09 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of crystal silicon solar cell |
-
2010
- 2010-08-31 CN CN 201010267015 patent/CN101937944A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040112426A1 (en) * | 2002-12-11 | 2004-06-17 | Sharp Kabushiki Kaisha | Solar cell and method of manufacturing the same |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN101728459A (en) * | 2009-11-18 | 2010-06-09 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of crystal silicon solar cell |
Cited By (28)
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| CN102244143B (en) * | 2011-06-27 | 2013-10-23 | 光为绿色新能源股份有限公司 | Preparation method of crystalline silicon solar cell |
| CN102231393A (en) * | 2011-07-07 | 2011-11-02 | 西安交通大学苏州研究院 | Silicon solar cell back surface field electrode structure and preparation method |
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| CN102262698B (en) * | 2011-07-27 | 2013-03-20 | 上海交通大学 | Method for detecting defect state density of emission layer and buffer layer based on solar cell performance impact estimation |
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