CN104078530A - Manufacturing method of dual-suede crystalline silicon solar cell - Google Patents

Manufacturing method of dual-suede crystalline silicon solar cell Download PDF

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Publication number
CN104078530A
CN104078530A CN201410178484.9A CN201410178484A CN104078530A CN 104078530 A CN104078530 A CN 104078530A CN 201410178484 A CN201410178484 A CN 201410178484A CN 104078530 A CN104078530 A CN 104078530A
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solar cell
silicon
matte
silicon solar
crystal
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王国宁
周青
郭芳芳
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Jiangxi University of Technology
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Jiangxi University of Technology
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Priority to CN201410178484.9A priority Critical patent/CN104078530A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a manufacturing method of a dual-suede crystalline silicon solar cell and relates to the field of crystalline silicon solar cell manufacture. By improving a crystalline silicon solar cell general process, a back surface coating process is added based on the crystalline silicon solar cell general process, dual-suede light trapping structures are manufactured on the front and rear surfaces of the crystalline silicon solar cell, the light trapping effect of the crystalline silicon solar cell is enhanced, and the photoelectric conversion efficiency of the solar cell is improved.

Description

The manufacture method of a kind of pair of matte crystal-silicon solar cell
Technical field
What the present invention relates to is that crystal-silicon solar cell is manufactured field, is specifically related to the manufacture method of a kind of pair of matte crystal-silicon solar cell.
Background technology
Conventionally make suede structure as shown in Figure 1 at the front surface of crystal-silicon solar cell.It is good that research shows that the forward and backward surface shown in Fig. 4 has two matte solar cells of matte to have the sunken luminous effect of single matte solar cell of matte than the only front surface shown in Fig. 3.Improve solar cell and fall into luminous effect, can improve the photoelectric conversion efficiency of solar cell.
The technological process of production that crystal silicon solar energy battery generally adopts at present as shown in Figure 5; But adopt the technological process of production as shown in Figure 5, can only produce the crystal-silicon solar cell with single matte as shown in Figure 3, just the front surface of battery has suede structure as shown in Figure 1, and the rear surface of battery does not have suede structure; Mainly because the etching trimming knot in common process and go PSG technique the suede structure of rear surface can be eroded and become the situation of Fig. 2.
Summary of the invention
For the deficiency existing in prior art, the present invention seeks to be to provide the manufacture method of a kind of pair of matte crystal-silicon solar cell, all there is suede structure on the forward and backward surface of solar cell.Two suede structures have better sunken luminous effect, thereby can improve the conversion efficiency of crystal silicon solar energy battery.
To achieve these goals, the present invention realizes by the following technical solutions: the manufacture method of a kind of pair of matte crystal-silicon solar cell, and its manufacturing process flow is: 1, before making herbs into wool and diffusion, clean; 2, diffusion system knot; 3, back of the body surface coating; 4, etching trimming knot and remove PSG(phosphorosilicate glass), 5, PECVD plated film; 6, screen-printed metal polarizing electrode and sintering.Compare with common process together with having increased and carry on the back surface coating technique.
The present invention be more particularly directed to increases and carries on the back together surface coating technique after diffusion system knot technique.Carry on the back the silicon nitride mask that plates one deck on surperficial suede structure and have mask effect at battery by back of the body surface coating technique, silicon nitride mask has played the effect of the surperficial suede structure of the protection back of the body.Because tie and go in PSG technique at etching trimming subsequently, silicon nitride mask can stop corrosive liquid to contact with silicon, thereby has avoided the surperficial suede structure of the back of the body corroded and damage.
The PECVD filming equipment of back of the body surface coating process using type of production involved in the present invention, also can share PECVD filming equipment with PECVD filming process.In back of the body surface coating technique, adopt the rear surface of battery as coated surface, adopt silane and ammonia to pass in plated film chamber as reacting gas.The corrosive liquid of etching off limit knot can react with silicon nitride mask in the same time, need to control the thickness of silicon nitride mask, ensures that silicon nitride mask has just reacted.
Before making herbs into wool and diffusion, matting requires to adopt two-sided process for etching in addition, and silicon chip is after cleaning before making herbs into wool and diffusion, and front and rear surfaces has suede structure.
The invention has the beneficial effects as follows: can industrially produce two matte crystal-silicon solar cells, improve the sunken luminous effect of crystal-silicon solar cell by two suede structures, thereby improve the photoelectric conversion efficiency of crystal-silicon solar cell.
Brief description of the drawings
Describe the present invention in detail below in conjunction with the drawings and specific embodiments;
Fig. 1 is suede structure figure of the present invention;
The rear surface structure chart of Fig. 2 after etching technics corrosion;
The structural representation of the mono-matte crystal-silicon solar cell of Fig. 3;
The structural representation of the two matte crystal-silicon solar cells of Fig. 4;
The production technological process that Fig. 5 crystal silicon solar energy battery generally adopts;
Fig. 6 crystal silicon solar energy battery production technological process of the present invention;
Each technological effect figure in Fig. 7 embodiment of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach object and effect is easy to understand, below in conjunction with embodiment, further set forth the present invention.
With reference to Fig. 1-Fig. 7, the manufacturing process flow of two matte crystal-silicon solar cells of this embodiment as shown in Figure 6, comprises successively: before making herbs into wool and diffusion, clean, diffusion system knot, back of the body surface coating, etching trimming knot and remove PSG(phosphorosilicate glass), PECVD plated film and screen-printed metal polarizing electrode and sintering.Following Dui Ge road technique is described in further detail, and particular content is as follows:
1, before making herbs into wool and diffusion, clean
Adopt common P type silicon chip as shown in Figure 7 (a); For monocrystalline silicon piece, adopt NaOH, isopropyl alcohol and the making herbs into wool additive aqueous solution as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 78 DEG C; For polysilicon chip, adopt hydrofluoric acid, aqueous solution of nitric acid as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 8 DEG C; Ensure that silicon chip is two-sided is all immersed in etchant solution; After above-mentioned PROCESS FOR TREATMENT, just all form suede structure in front surface (1), rear surface (4) of P type silicon (7), as shown in Figure 7 (b) shows.
2, diffusion system knot
Adopt two one side diffusion ways that silicon chip stacks; By liquid electronic pure phosphorus oxychloride, as diffusion phosphorus source, diffusion temperature is no more than 850 DEG C; By diffusion system knot, mainly form one deck n type diffused layer 3 at the front surface 1 of P type silicon chip, thereby form PN junction, as shown in Fig. 7 (c).
3, back of the body surface coating
This is the peculiar processing step of the present invention.Adopt the rear surface 4 of battery as coated surface; Adopt the production equipment of PECVD filming equipment as this processing step; Adopt silane and ammonia to pass in the plated film chamber of PECVD filming equipment as the reacting gas of back of the body surface coating; The flow-rate ratio of silane and ammonia is 1:5 ∽ 1:8, and the thickness of silicon nitride film should be controlled within the scope of 40 ∽ 60nm; The main purpose of back of the body surface coating technique is on the matte of crystal-silicon solar cell rear surface 4, to plate silicon nitride mask 8 that one deck the is thin protective layer as rear surface matte, as shown in Figure 7 (d).
4, etching trimming knot and remove PSG(phosphorosilicate glass)
Adopt wet-etching technology.Remove PSG with hydrofluoric acid, use hydrofluoric acid, aqueous solution of nitric acid to remove the N-type layer on silicon chip four limits; Cell piece faces up, rear surface is immersed in hydrofluoric acid, aqueous solution of nitric acid, because the matte outside of rear surface is coated with one deck silicon nitride mask 8, so silicon nitride mask 8 is first subject to the corrosion of hydrofluoric acid, aqueous solution of nitric acid, tie and go after PSG PROCESS FOR TREATMENT by etching trimming, reached the object of removing the N-type layer on PSG and four limits, silicon nitride mask 8 also reacts completely simultaneously, thereby realizes the two matte light trapping structures as shown in Fig. 7 (e).
5, PECVD plated film, screen-printed metal polarizing electrode and sintering
PECVD plated film, screen-printed metal polarizing electrode and sintering process are the same with the crystal-silicon solar cell technique of common single matte light trapping structure.PECVD plated film is made silicon nitride film 2 at battery front surface 1; Screen-printed metal polarizing electrode and sintering are made pectination metal electrode 6 and are made aluminium film 5 in rear surface at front surface.After PECVD plated film, screen-printed metal polarizing electrode and sintering process are processed, a kind of forward and backward surface all has two matte crystal-silicon solar cells of matte has just manufactured, and its structure as shown in Figure 4.
More than show and described general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.

Claims (5)

1. a manufacture method for two matte crystal-silicon solar cells, is characterized in that, its manufacturing process flow is: 1, before making herbs into wool and diffusion, clean; 2, diffusion system knot; 3, back of the body surface coating; 4, etching trimming knot and remove PSG(phosphorosilicate glass), 5, PECVD plated film; 6, screen-printed metal polarizing electrode and sintering.
2. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, it is characterized in that, described step (1) is for monocrystalline silicon piece, adopt NaOH, isopropyl alcohol and the making herbs into wool additive aqueous solution as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 78 DEG C; For polysilicon chip, adopt hydrofluoric acid, aqueous solution of nitric acid as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 8 DEG C; Ensure that silicon chip is two-sided is all immersed in etchant solution; After above-mentioned PROCESS FOR TREATMENT, just all form suede structure in front surface, the rear surface of P type silicon.
3. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, is characterized in that, described step (2) adopts two one side diffusion ways that silicon chip stacks; By liquid electronic pure phosphorus oxychloride, as diffusion phosphorus source, diffusion temperature is no more than 850 DEG C; By diffusion system knot, mainly form one deck n type diffused layer (3) at the front surface (1) of P type silicon chip, thereby form PN junction.
4. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, is characterized in that, described step (3) adopts the rear surface of battery as coated surface; Adopt the production equipment of PECVD filming equipment as this processing step; Adopt silane and ammonia to pass in the plated film chamber of PECVD filming equipment as the reacting gas of back of the body surface coating; The flow-rate ratio of silane and ammonia is 1:5 ∽ 1:8, and the thickness of silicon nitride film should be controlled within the scope of 40 ∽ 60nm; The main purpose of back of the body surface coating technique is on the matte of crystal-silicon solar cell rear surface, to plate silicon nitride mask that one deck the is thin protective layer as rear surface matte.
5. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, it is characterized in that, described step (4) adopts wet-etching technology, and its concrete steps are: remove PSG with hydrofluoric acid, use hydrofluoric acid, aqueous solution of nitric acid to remove the N-type layer on silicon chip four limits; Cell piece faces up, rear surface is immersed in hydrofluoric acid, aqueous solution of nitric acid, because the matte outside of rear surface is coated with one deck silicon nitride mask, so silicon nitride mask is first subject to the corrosion of hydrofluoric acid, aqueous solution of nitric acid, tie and go after PSG PROCESS FOR TREATMENT by etching trimming, reached the object of removing the N-type layer on PSG and four limits, silicon nitride mask also reacts completely simultaneously, thereby realizes two matte light trapping structures.
CN201410178484.9A 2014-04-30 2014-04-30 Manufacturing method of dual-suede crystalline silicon solar cell Pending CN104078530A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104362219A (en) * 2014-11-06 2015-02-18 天威新能源控股有限公司 Crystalline solar cell production process
CN104867819A (en) * 2015-04-14 2015-08-26 英利能源(中国)有限公司 PN junction preparation method and solar cell preparation method
CN106057974A (en) * 2016-07-08 2016-10-26 江西科技学院 Manufacturing method of back surface polishing crystalline silicon solar battery
CN106684173A (en) * 2015-11-10 2017-05-17 财团法人工业技术研究院 Double-sided photoelectric conversion element
CN108831936A (en) * 2018-05-29 2018-11-16 华侨大学 Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method
CN111446326A (en) * 2020-02-28 2020-07-24 天津爱旭太阳能科技有限公司 Solar cell single-side texturing process protected by mask
CN112993079A (en) * 2019-12-02 2021-06-18 阜宁阿特斯阳光电力科技有限公司 Preparation method of photovoltaic cell and photovoltaic cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840954A (en) * 2009-03-18 2010-09-22 中国科学院微电子研究所 Method for preparing double-faced PN crystal silicon solar batteries by utilizing traditional technique
CN101937944A (en) * 2010-08-31 2011-01-05 上海交通大学 Preparation method of double-sided passivated crystalline silicon solar cell
CN202585464U (en) * 2012-04-09 2012-12-05 河南思可达光伏材料股份有限公司 Solar photovoltaic glass having double suede face structure
CN103022264A (en) * 2013-01-08 2013-04-03 奥特斯维能源(太仓)有限公司 Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840954A (en) * 2009-03-18 2010-09-22 中国科学院微电子研究所 Method for preparing double-faced PN crystal silicon solar batteries by utilizing traditional technique
CN101937944A (en) * 2010-08-31 2011-01-05 上海交通大学 Preparation method of double-sided passivated crystalline silicon solar cell
CN202585464U (en) * 2012-04-09 2012-12-05 河南思可达光伏材料股份有限公司 Solar photovoltaic glass having double suede face structure
CN103022264A (en) * 2013-01-08 2013-04-03 奥特斯维能源(太仓)有限公司 Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104362219A (en) * 2014-11-06 2015-02-18 天威新能源控股有限公司 Crystalline solar cell production process
CN104867819A (en) * 2015-04-14 2015-08-26 英利能源(中国)有限公司 PN junction preparation method and solar cell preparation method
CN106684173A (en) * 2015-11-10 2017-05-17 财团法人工业技术研究院 Double-sided photoelectric conversion element
CN106057974A (en) * 2016-07-08 2016-10-26 江西科技学院 Manufacturing method of back surface polishing crystalline silicon solar battery
CN108831936A (en) * 2018-05-29 2018-11-16 华侨大学 Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method
CN112993079A (en) * 2019-12-02 2021-06-18 阜宁阿特斯阳光电力科技有限公司 Preparation method of photovoltaic cell and photovoltaic cell
CN111446326A (en) * 2020-02-28 2020-07-24 天津爱旭太阳能科技有限公司 Solar cell single-side texturing process protected by mask

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Application publication date: 20141001