CN104078530A - Manufacturing method of dual-suede crystalline silicon solar cell - Google Patents
Manufacturing method of dual-suede crystalline silicon solar cell Download PDFInfo
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- CN104078530A CN104078530A CN201410178484.9A CN201410178484A CN104078530A CN 104078530 A CN104078530 A CN 104078530A CN 201410178484 A CN201410178484 A CN 201410178484A CN 104078530 A CN104078530 A CN 104078530A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 238000009966 trimming Methods 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000008570 general process Effects 0.000 abstract 2
- 239000013078 crystal Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a dual-suede crystalline silicon solar cell and relates to the field of crystalline silicon solar cell manufacture. By improving a crystalline silicon solar cell general process, a back surface coating process is added based on the crystalline silicon solar cell general process, dual-suede light trapping structures are manufactured on the front and rear surfaces of the crystalline silicon solar cell, the light trapping effect of the crystalline silicon solar cell is enhanced, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical field
What the present invention relates to is that crystal-silicon solar cell is manufactured field, is specifically related to the manufacture method of a kind of pair of matte crystal-silicon solar cell.
Background technology
Conventionally make suede structure as shown in Figure 1 at the front surface of crystal-silicon solar cell.It is good that research shows that the forward and backward surface shown in Fig. 4 has two matte solar cells of matte to have the sunken luminous effect of single matte solar cell of matte than the only front surface shown in Fig. 3.Improve solar cell and fall into luminous effect, can improve the photoelectric conversion efficiency of solar cell.
The technological process of production that crystal silicon solar energy battery generally adopts at present as shown in Figure 5; But adopt the technological process of production as shown in Figure 5, can only produce the crystal-silicon solar cell with single matte as shown in Figure 3, just the front surface of battery has suede structure as shown in Figure 1, and the rear surface of battery does not have suede structure; Mainly because the etching trimming knot in common process and go PSG technique the suede structure of rear surface can be eroded and become the situation of Fig. 2.
Summary of the invention
For the deficiency existing in prior art, the present invention seeks to be to provide the manufacture method of a kind of pair of matte crystal-silicon solar cell, all there is suede structure on the forward and backward surface of solar cell.Two suede structures have better sunken luminous effect, thereby can improve the conversion efficiency of crystal silicon solar energy battery.
To achieve these goals, the present invention realizes by the following technical solutions: the manufacture method of a kind of pair of matte crystal-silicon solar cell, and its manufacturing process flow is: 1, before making herbs into wool and diffusion, clean; 2, diffusion system knot; 3, back of the body surface coating; 4, etching trimming knot and remove PSG(phosphorosilicate glass), 5, PECVD plated film; 6, screen-printed metal polarizing electrode and sintering.Compare with common process together with having increased and carry on the back surface coating technique.
The present invention be more particularly directed to increases and carries on the back together surface coating technique after diffusion system knot technique.Carry on the back the silicon nitride mask that plates one deck on surperficial suede structure and have mask effect at battery by back of the body surface coating technique, silicon nitride mask has played the effect of the surperficial suede structure of the protection back of the body.Because tie and go in PSG technique at etching trimming subsequently, silicon nitride mask can stop corrosive liquid to contact with silicon, thereby has avoided the surperficial suede structure of the back of the body corroded and damage.
The PECVD filming equipment of back of the body surface coating process using type of production involved in the present invention, also can share PECVD filming equipment with PECVD filming process.In back of the body surface coating technique, adopt the rear surface of battery as coated surface, adopt silane and ammonia to pass in plated film chamber as reacting gas.The corrosive liquid of etching off limit knot can react with silicon nitride mask in the same time, need to control the thickness of silicon nitride mask, ensures that silicon nitride mask has just reacted.
Before making herbs into wool and diffusion, matting requires to adopt two-sided process for etching in addition, and silicon chip is after cleaning before making herbs into wool and diffusion, and front and rear surfaces has suede structure.
The invention has the beneficial effects as follows: can industrially produce two matte crystal-silicon solar cells, improve the sunken luminous effect of crystal-silicon solar cell by two suede structures, thereby improve the photoelectric conversion efficiency of crystal-silicon solar cell.
Brief description of the drawings
Describe the present invention in detail below in conjunction with the drawings and specific embodiments;
Fig. 1 is suede structure figure of the present invention;
The rear surface structure chart of Fig. 2 after etching technics corrosion;
The structural representation of the mono-matte crystal-silicon solar cell of Fig. 3;
The structural representation of the two matte crystal-silicon solar cells of Fig. 4;
The production technological process that Fig. 5 crystal silicon solar energy battery generally adopts;
Fig. 6 crystal silicon solar energy battery production technological process of the present invention;
Each technological effect figure in Fig. 7 embodiment of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach object and effect is easy to understand, below in conjunction with embodiment, further set forth the present invention.
With reference to Fig. 1-Fig. 7, the manufacturing process flow of two matte crystal-silicon solar cells of this embodiment as shown in Figure 6, comprises successively: before making herbs into wool and diffusion, clean, diffusion system knot, back of the body surface coating, etching trimming knot and remove PSG(phosphorosilicate glass), PECVD plated film and screen-printed metal polarizing electrode and sintering.Following Dui Ge road technique is described in further detail, and particular content is as follows:
1, before making herbs into wool and diffusion, clean
Adopt common P type silicon chip as shown in Figure 7 (a); For monocrystalline silicon piece, adopt NaOH, isopropyl alcohol and the making herbs into wool additive aqueous solution as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 78 DEG C; For polysilicon chip, adopt hydrofluoric acid, aqueous solution of nitric acid as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 8 DEG C; Ensure that silicon chip is two-sided is all immersed in etchant solution; After above-mentioned PROCESS FOR TREATMENT, just all form suede structure in front surface (1), rear surface (4) of P type silicon (7), as shown in Figure 7 (b) shows.
2, diffusion system knot
Adopt two one side diffusion ways that silicon chip stacks; By liquid electronic pure phosphorus oxychloride, as diffusion phosphorus source, diffusion temperature is no more than 850 DEG C; By diffusion system knot, mainly form one deck n type diffused layer 3 at the front surface 1 of P type silicon chip, thereby form PN junction, as shown in Fig. 7 (c).
3, back of the body surface coating
This is the peculiar processing step of the present invention.Adopt the rear surface 4 of battery as coated surface; Adopt the production equipment of PECVD filming equipment as this processing step; Adopt silane and ammonia to pass in the plated film chamber of PECVD filming equipment as the reacting gas of back of the body surface coating; The flow-rate ratio of silane and ammonia is 1:5 ∽ 1:8, and the thickness of silicon nitride film should be controlled within the scope of 40 ∽ 60nm; The main purpose of back of the body surface coating technique is on the matte of crystal-silicon solar cell rear surface 4, to plate silicon nitride mask 8 that one deck the is thin protective layer as rear surface matte, as shown in Figure 7 (d).
4, etching trimming knot and remove PSG(phosphorosilicate glass)
Adopt wet-etching technology.Remove PSG with hydrofluoric acid, use hydrofluoric acid, aqueous solution of nitric acid to remove the N-type layer on silicon chip four limits; Cell piece faces up, rear surface is immersed in hydrofluoric acid, aqueous solution of nitric acid, because the matte outside of rear surface is coated with one deck silicon nitride mask 8, so silicon nitride mask 8 is first subject to the corrosion of hydrofluoric acid, aqueous solution of nitric acid, tie and go after PSG PROCESS FOR TREATMENT by etching trimming, reached the object of removing the N-type layer on PSG and four limits, silicon nitride mask 8 also reacts completely simultaneously, thereby realizes the two matte light trapping structures as shown in Fig. 7 (e).
5, PECVD plated film, screen-printed metal polarizing electrode and sintering
PECVD plated film, screen-printed metal polarizing electrode and sintering process are the same with the crystal-silicon solar cell technique of common single matte light trapping structure.PECVD plated film is made silicon nitride film 2 at battery front surface 1; Screen-printed metal polarizing electrode and sintering are made pectination metal electrode 6 and are made aluminium film 5 in rear surface at front surface.After PECVD plated film, screen-printed metal polarizing electrode and sintering process are processed, a kind of forward and backward surface all has two matte crystal-silicon solar cells of matte has just manufactured, and its structure as shown in Figure 4.
More than show and described general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (5)
1. a manufacture method for two matte crystal-silicon solar cells, is characterized in that, its manufacturing process flow is: 1, before making herbs into wool and diffusion, clean; 2, diffusion system knot; 3, back of the body surface coating; 4, etching trimming knot and remove PSG(phosphorosilicate glass), 5, PECVD plated film; 6, screen-printed metal polarizing electrode and sintering.
2. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, it is characterized in that, described step (1) is for monocrystalline silicon piece, adopt NaOH, isopropyl alcohol and the making herbs into wool additive aqueous solution as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 78 DEG C; For polysilicon chip, adopt hydrofluoric acid, aqueous solution of nitric acid as etchant solution, silicon chip to be corroded, etchant solution temperature is no more than 8 DEG C; Ensure that silicon chip is two-sided is all immersed in etchant solution; After above-mentioned PROCESS FOR TREATMENT, just all form suede structure in front surface, the rear surface of P type silicon.
3. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, is characterized in that, described step (2) adopts two one side diffusion ways that silicon chip stacks; By liquid electronic pure phosphorus oxychloride, as diffusion phosphorus source, diffusion temperature is no more than 850 DEG C; By diffusion system knot, mainly form one deck n type diffused layer (3) at the front surface (1) of P type silicon chip, thereby form PN junction.
4. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, is characterized in that, described step (3) adopts the rear surface of battery as coated surface; Adopt the production equipment of PECVD filming equipment as this processing step; Adopt silane and ammonia to pass in the plated film chamber of PECVD filming equipment as the reacting gas of back of the body surface coating; The flow-rate ratio of silane and ammonia is 1:5 ∽ 1:8, and the thickness of silicon nitride film should be controlled within the scope of 40 ∽ 60nm; The main purpose of back of the body surface coating technique is on the matte of crystal-silicon solar cell rear surface, to plate silicon nitride mask that one deck the is thin protective layer as rear surface matte.
5. the manufacture method of a kind of pair of matte crystal-silicon solar cell according to claim 1, it is characterized in that, described step (4) adopts wet-etching technology, and its concrete steps are: remove PSG with hydrofluoric acid, use hydrofluoric acid, aqueous solution of nitric acid to remove the N-type layer on silicon chip four limits; Cell piece faces up, rear surface is immersed in hydrofluoric acid, aqueous solution of nitric acid, because the matte outside of rear surface is coated with one deck silicon nitride mask, so silicon nitride mask is first subject to the corrosion of hydrofluoric acid, aqueous solution of nitric acid, tie and go after PSG PROCESS FOR TREATMENT by etching trimming, reached the object of removing the N-type layer on PSG and four limits, silicon nitride mask also reacts completely simultaneously, thereby realizes two matte light trapping structures.
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| CN201410178484.9A CN104078530A (en) | 2014-04-30 | 2014-04-30 | Manufacturing method of dual-suede crystalline silicon solar cell |
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| CN201410178484.9A CN104078530A (en) | 2014-04-30 | 2014-04-30 | Manufacturing method of dual-suede crystalline silicon solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362219A (en) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | Crystalline solar cell production process |
| CN104867819A (en) * | 2015-04-14 | 2015-08-26 | 英利能源（中国）有限公司 | PN junction preparation method and solar cell preparation method |
| CN106057974A (en) * | 2016-07-08 | 2016-10-26 | 江西科技学院 | Manufacturing method of back surface polishing crystalline silicon solar battery |
| CN106684173A (en) * | 2015-11-10 | 2017-05-17 | 财团法人工业技术研究院 | Double-sided photoelectric conversion element |
| CN108831936A (en) * | 2018-05-29 | 2018-11-16 | 华侨大学 | Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method |
| CN111446326A (en) * | 2020-02-28 | 2020-07-24 | 天津爱旭太阳能科技有限公司 | Solar cell single-side texturing process protected by mask |
| CN112993079A (en) * | 2019-12-02 | 2021-06-18 | 阜宁阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic cell and photovoltaic cell |
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| CN101840954A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院微电子研究所 | Method for preparing double-faced PN crystal silicon solar batteries by utilizing traditional technique |
| CN101937944A (en) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | Preparation method of double-sided passivated crystalline silicon solar cell |
| CN202585464U (en) * | 2012-04-09 | 2012-12-05 | 河南思可达光伏材料股份有限公司 | Solar photovoltaic glass having double suede face structure |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
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2014
- 2014-04-30 CN CN201410178484.9A patent/CN104078530A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101840954A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院微电子研究所 | Method for preparing double-faced PN crystal silicon solar batteries by utilizing traditional technique |
| CN101937944A (en) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | Preparation method of double-sided passivated crystalline silicon solar cell |
| CN202585464U (en) * | 2012-04-09 | 2012-12-05 | 河南思可达光伏材料股份有限公司 | Solar photovoltaic glass having double suede face structure |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362219A (en) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | Crystalline solar cell production process |
| CN104867819A (en) * | 2015-04-14 | 2015-08-26 | 英利能源（中国）有限公司 | PN junction preparation method and solar cell preparation method |
| CN106684173A (en) * | 2015-11-10 | 2017-05-17 | 财团法人工业技术研究院 | Double-sided photoelectric conversion element |
| CN106057974A (en) * | 2016-07-08 | 2016-10-26 | 江西科技学院 | Manufacturing method of back surface polishing crystalline silicon solar battery |
| CN108831936A (en) * | 2018-05-29 | 2018-11-16 | 华侨大学 | Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method |
| CN112993079A (en) * | 2019-12-02 | 2021-06-18 | 阜宁阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic cell and photovoltaic cell |
| CN111446326A (en) * | 2020-02-28 | 2020-07-24 | 天津爱旭太阳能科技有限公司 | Solar cell single-side texturing process protected by mask |
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Application publication date: 20141001 |