CN111446326A - Solar cell single-side texturing process protected by mask - Google Patents
Solar cell single-side texturing process protected by mask Download PDFInfo
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- CN111446326A CN111446326A CN202010126353.1A CN202010126353A CN111446326A CN 111446326 A CN111446326 A CN 111446326A CN 202010126353 A CN202010126353 A CN 202010126353A CN 111446326 A CN111446326 A CN 111446326A
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- silicon wafer
- solar cell
- texturing
- sided
- oxide layer
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- 238000000034 method Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 239000003513 alkali Substances 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 239000013585 weight reducing agent Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 9
- 239000010410 layer Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 12
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell single-side texturing process protected by a mask, which comprises the steps of ⑴ carrying out alkali texturing on a silicon wafer to form antireflection textured surfaces on the front surface and the back surface of the silicon wafer, ⑵ placing the silicon wafer in a furnace tube for thermal diffusion to form oxide layers on the front surface and the back surface of the silicon wafer, ⑶ protecting the oxide layer on the front surface of the silicon wafer and removing PN junctions and the oxide layer on the back surface and the antireflection textured surface on the back surface, ⑷ carrying out alkali texturing on the silicon wafer to form the antireflection textured surface on the back surface of the silicon wafer and then removing the oxide layer on the front surface of the silicon wafer to finish the solar cell single-side texturing.
Description
Technical Field
The invention relates to a solar cell technology, in particular to a solar cell single-side texturing process protected by a mask.
Background
The crystal silicon wafer is widely applied to the fields of photovoltaic solar energy and semiconductors, the cutting of the crystal silicon wafer used in the photovoltaic industry at present mainly comprises a mortar multi-line cutting technology and a diamond line cutting technology, and in comparison, the diamond line cutting technology is used for multi-line cutting of a single crystal silicon block by adopting a diamond line to obtain the crystal silicon wafer, and has the characteristics of less surface damage, shallow and dense line marks and low processing cost of the silicon wafer, so the diamond line cutting technology becomes the current mainstream technology.
In the production process of a solar cell, texturing on the surface of a silicon wafer is a key process for improving the conversion efficiency of the cell, and a textured surface is formed on the surface of the silicon wafer through chemical reaction to reduce the surface reflectivity and enhance the absorption of light. With the progress of the process technology at present, whether double-sided batteries of N-type batteries or P-type batteries are prevalent, one-sided battery structures need to be reserved under many conditions, when single-sided texturing is carried out, most of the single-sided texturing needs to be protected by plating SiNx films on the textured surfaces in advance, however, the cost of the film coating process is high, and a process needs to be added subsequently to remove a film coating protective layer on the textured surface, so that the processing cost of the battery is increased.
Disclosure of Invention
The invention aims to provide a solar cell single-side texturing process protected by a mask, which has high production line compatibility, reduces mask procedures and reduces cell processing cost.
The purpose of the invention is realized by the following technical scheme: a solar cell single-side texturing process protected by a mask is characterized by specifically comprising the following steps:
⑴ selecting a monocrystalline silicon wafer, alkali texturing the silicon wafer, and forming antireflection textured surfaces on the front side and the back side of the silicon wafer;
⑵, placing the silicon wafer obtained in the step ⑴ in a furnace tube for thermal diffusion to form oxide layers on the front side and the back side of the silicon wafer;
⑶, protecting the oxide layer on the front side of the silicon wafer obtained in the step ⑵, removing the PN junction and the oxide layer on the back side, and removing the anti-reflection suede on the back side;
⑷, alkali texturing is carried out on the silicon wafer obtained in the step ⑶, an anti-reflection textured surface is formed on the back surface of the silicon wafer, and then an oxidation layer on the front surface of the silicon wafer is removed, so that single-sided texturing of the solar cell is completed.
According to the invention, the oxidation layer formed by thermal diffusion is used as a mask, so that single-side texturing of the solar cell is realized, only one texturing groove type device is needed to be added on a production line, the compatibility of the production line is high, the mask process is omitted, pollution caused by single cleaning of the SiNx film and SiNx cleaning can be avoided, the front structure of the cell is reserved, and the processing cost of the solar cell is reduced.
In a preferred embodiment of the present invention, step ⑷ uses a wool making tank device, and the silicon wafer surface obtained in step ⑶ is subjected to a cleaning pretreatment, then subjected to alkali wool making, then rinsed to remove residual alkali solution on the silicon wafer surface, and finally subjected to acid cleaning to remove residual alkali solution and oxide layer on the silicon wafer surface.
As a preferred embodiment of the invention, KOH or NaOH solution with the volume concentration of 1-3% and hydrogen peroxide solution with the volume concentration of 4-8% are adopted for cleaning pretreatment, and the cleaning pretreatment is heated to 60-70 ℃ for 20-120 s.
As a preferred embodiment of the present invention, the alkali texturing of step ⑷ employs 2% -4% by volume KOH or NaOH solution and 1% -3% texturing additive, the temperature is 60-80 ℃, the process time is 200-600s, and then rinsing with pure water for 1-5 min.
In a preferred embodiment of the present invention, the acid washing in step ⑷ uses a mixture of 5-15 vol% HF and 5-15 vol% HCl.
In the step ⑶, the front surface is protected by a water film and the back surface is acid-washed to remove the back PN junction, the oxide layer and the antireflection texture.
In a preferred embodiment of the present invention, the single crystal silicon wafer is a p-type single crystal silicon wafer, and the oxide layer formed during the thermal diffusion process is a PSG layer.
As another preferred embodiment of the present invention, the single crystal silicon wafer is an N-type single crystal silicon wafer, and the oxide layer formed during the thermal diffusion process is a BSG layer.
As a preferred embodiment of the present invention, in the step ⑶, the acid washing is performed by using HF with a concentration of 10-20% by volume and HNO with a concentration of 20-40% by volume3And 10% by volume of H2SO4The solution was mixed.
In a preferred embodiment of the present invention, in the step ⑴, the selected silicon wafer is a lightly doped silicon wafer with a resistivity of 0.1 to 6 Ω · cm, a texturing weight reduction range is 0.4 to 0.8g, and a reflectivity is 8% to 18%.
Compared with the prior art, the invention has the following remarkable effects:
according to the invention, the oxidation layer formed by thermal diffusion is used as a mask, so that single-side texturing of the solar cell is realized, only one texturing groove type device is needed to be added on a production line, the compatibility of the production line is high, the mask process is omitted, pollution caused by single cleaning of the SiNx film and SiNx cleaning can be avoided, the front structure of the cell is reserved, and the processing cost of the solar cell is reduced.
Detailed Description
Example 1
⑴, selecting a lightly doped p-type monocrystalline silicon wafer with the resistivity of 0.1-6 omega cm, and performing alkali texturing on the p-type silicon wafer to form a pyramid-shaped antireflection textured surface on the front and back surfaces of the p-type silicon wafer substrate, wherein the texturing weight reduction range is 0.4-0.8g, and the reflectivity (full-wave band 300-1200nm) range is 8% -18%;
⑵, placing the silicon wafer in a furnace tube at 700-900 ℃ for P (phosphorus) diffusion for 5-50 min to form an n-type layer on the surface of the silicon wafer to generate a PSG layer;
⑶ using chain type acid washing water bleaching technology, protecting the PSG layer with a water film on the front side, contacting the mixed solution of HF with the volume concentration of 10% -20%, HNO3 with the volume concentration of 20% -40% and H2SO4 with the volume concentration of 10% only on the back side, removing the PN junction and the PSG layer on the back side, removing the anti-reflection suede on the back side, and keeping the PSG layer on the front side;
⑷, preparing a solution by using a front PSG mask in a groove type texturing device, 1, cleaning pretreatment, namely preparing KOH or NaOH solution with the volume concentration of 1-3% and hydrogen peroxide solution with the volume concentration of 4-8%, heating to 60-70 ℃, and carrying out cleaning pretreatment on the surface of a silicon wafer for 20-120s, 2, protecting single-side texturing by using PSG, namely preparing KOH or NaOH solution with the volume concentration of 2-4% and a texturing additive with the volume concentration of 1-3%, heating to 60-80 ℃, and carrying out the process for 600s at 200-80 ℃, forming an antireflection textured surface on the back of the silicon wafer, then rinsing the silicon wafer in a pure water tank for 1-5min, removing residual alkali liquor on the surface of the silicon wafer, and 3, pickling, namely preparing a mixed solution of HF with the volume concentration of 5-15% and HCl with the volume concentration of 5-15%, removing residual alkali liquor on the surface of the silicon wafer, removing a front PSG layer, thus completing single-side texturing of the solar cell.
Therefore, single-side alkali texturing can be met by only adding one texturing groove type device, pollution caused by independent cleaning of the SiNx film and cleaning of the SiNx is avoided, meanwhile, the front structure of the battery is reserved, the existing process of a production line is compatible, and the battery processing cost is reduced.
The subsequent process steps of the solar cell are produced according to the actual cell product requirements.
Example 2
⑴, selecting a lightly doped N-type monocrystalline silicon wafer with the resistivity of 0.1-6 omega cm, and performing alkali texturing on the N-type silicon wafer to form a pyramid-shaped antireflection textured surface on the front and back surfaces of the substrate of the N-type silicon wafer, wherein the texturing weight reduction range is 0.4-0.8g, and the reflectivity (full wave band 300-1200nm) range is 8% -18%;
⑵ placing the silicon wafer in a furnace tube at 800-1100 deg.C for B (boron) diffusion for 30-100 min to form a P-type layer on the surface of the silicon wafer to generate a BSG layer;
⑶ the BSG layer is protected by water film on its front surface and only contacted with 10-20 vol.% solutionHF, HNO at a concentration of 20-40% by volume3And 10% by volume of H2SO4Mixing the solution, removing the PN junction and the BSG layer on the back, simultaneously removing the antireflection suede on the back, and keeping the BSG layer on the front;
⑷, preparing a solution by using a front BSG mask in a groove type texture-making device, 1, cleaning pretreatment, namely preparing KOH or NaOH solution with the volume concentration of 1-3% and hydrogen peroxide solution with the volume concentration of 4-8%, heating to 60-70 ℃, and carrying out cleaning pretreatment on the surface of a silicon wafer within the process time of 20-120s, 2, protecting single-side texture-making by using BSG, namely preparing KOH or NaOH solution with the volume concentration of 2-4% and a texture-making additive with the volume concentration of 1-3%, heating to 60-80 ℃, forming an antireflection texture on the back of the silicon wafer within the process time of 200-600s, then rinsing the silicon wafer in a pure water tank for 1-5min to remove residual alkali liquor on the surface of the silicon wafer, and 3, pickling, namely preparing a mixed solution of HF with the volume concentration of 5-15% and HCl with the volume concentration of 5-15%, removing residual alkali liquor on the surface of the silicon wafer, removing a front PSG layer and finishing single-side texture-making.
The subsequent process steps of the solar cell are produced according to the actual cell product requirements.
The embodiments of the present invention are not limited thereto, and according to the above-mentioned contents of the present invention, the present invention can be modified, substituted or changed in other various forms without departing from the basic technical idea of the present invention.
Claims (10)
1. A solar cell single-side texturing process protected by a mask is characterized by specifically comprising the following steps:
⑴ selecting a monocrystalline silicon wafer, alkali texturing the silicon wafer, and forming antireflection textured surfaces on the front side and the back side of the silicon wafer;
⑵, placing the silicon wafer obtained in the step ⑴ in a furnace tube for thermal diffusion to form oxide layers on the front side and the back side of the silicon wafer;
⑶, protecting the oxide layer on the front side of the silicon wafer obtained in the step ⑵, removing the PN junction and the oxide layer on the back side, and removing the anti-reflection suede on the back side;
⑷, alkali texturing is carried out on the silicon wafer obtained in the step ⑶, an anti-reflection textured surface is formed on the back surface of the silicon wafer, and then an oxidation layer on the front surface of the silicon wafer is removed, so that single-sided texturing of the solar cell is completed.
2. The single-sided etching process of solar cell under mask protection as claimed in claim 1, wherein said step ⑷ comprises cleaning silicon wafer surface obtained from step ⑶ with etching tank, etching with alkali, rinsing to remove residual alkali solution, and acid-washing to remove residual alkali solution and oxide layer.
3. The solar cell single-sided texturing process using mask protection according to claim 2, wherein: the cleaning pretreatment adopts KOH or NaOH solution with the volume concentration of 1-3% and hydrogen peroxide solution with the volume concentration of 4-8%, and the process time is 20-120s when the temperature is heated to 60-70 ℃.
4. The single-sided etching process of the solar cell protected by the mask as claimed in claim 3, wherein the alkali etching at step ⑷ comprises using 2-4 vol% KOH or NaOH solution and 1-3 vol% etching additive, the temperature is 60-80 ℃, the process time is 200-600s, and then rinsing with pure water for 1-5 min.
5. The single-sided etching process of solar cell with mask protection as claimed in claim 4, wherein the acid cleaning of step ⑷ employs a mixture of 5-15% by volume of HF and 5-15% by volume of HCl.
6. The single-sided etching process for solar cell with mask protection as claimed in claim 5, wherein in the step ⑶, the front side is protected by water film to form an oxide layer, the back side is acid-washed, and the back side PN junction, the oxide layer and the anti-reflection texture surface are removed.
7. The solar cell single-sided texturing process using mask protection according to claim 6, wherein: the monocrystalline silicon piece is a p-type monocrystalline silicon piece, and the formed oxide layer is a PSG layer in the thermal diffusion process.
8. The solar cell single-sided texturing process using mask protection according to claim 6, wherein: the monocrystalline silicon piece is an N-type monocrystalline silicon piece, and an oxide layer formed in the thermal diffusion process is a BSG layer.
9. The single-sided etching process for solar cell with mask protection according to claim 7 or 8, wherein in the step ⑶, the acid cleaning is performed with HF at a volume concentration of 10-20%, HNO at a volume concentration of 20-40%3And 10% by volume of H2SO4The solution was mixed.
10. The single-sided texturing process for solar cells protected by masks according to claim 9, wherein in the step ⑴, the selected silicon wafer is a lightly doped silicon wafer with resistivity of 0.1-6 Ω -cm, weight reduction range of texturing is 0.4-0.8g, and reflectivity is 8-18%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010126353.1A CN111446326A (en) | 2020-02-28 | 2020-02-28 | Solar cell single-side texturing process protected by mask |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010126353.1A CN111446326A (en) | 2020-02-28 | 2020-02-28 | Solar cell single-side texturing process protected by mask |
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| CN111446326A true CN111446326A (en) | 2020-07-24 |
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| CN202010126353.1A Pending CN111446326A (en) | 2020-02-28 | 2020-02-28 | Solar cell single-side texturing process protected by mask |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299796A (en) * | 2021-05-28 | 2021-08-24 | 天津爱旭太阳能科技有限公司 | Texture surface making method of crystal silicon wafer and silicon wafer |
| CN114883454A (en) * | 2022-06-08 | 2022-08-09 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN114883454B (en) * | 2022-06-08 | 2024-04-30 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
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Application publication date: 20200724 |
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