CN110190155A - A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof - Google Patents
A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof Download PDFInfo
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- CN110190155A CN110190155A CN201910580146.0A CN201910580146A CN110190155A CN 110190155 A CN110190155 A CN 110190155A CN 201910580146 A CN201910580146 A CN 201910580146A CN 110190155 A CN110190155 A CN 110190155A
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- 238000002161 passivation Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 239000004411 aluminium Substances 0.000 claims abstract description 3
- 239000005297 pyrex Substances 0.000 claims abstract description 3
- 229920005591 polysilicon Polymers 0.000 claims description 14
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof, method includes: silicon wafer pretreatment and is thinned: carrying out conventional cleaning to silicon wafer, carries out reduction processing to silicon wafer using the TMAH aqueous slkali of 10~30% concentration after cleaning；Making herbs into wool: conventional making herbs into wool is carried out to silicon wafer；Diffusion: conventional boron is carried out to silicon wafer and is spread；The Pyrex layer at the single side removal back side；One texture-etching side is carried out to backside surface, then overleaf deposits one layer of silicon oxide layer；Deposited polycrystalline silicon thin film on silicon oxide layer overleaf；Using HF cleaning silicon chip, then in front side of silicon wafer deposited oxide aluminium film and silicon nitride film, backside deposition silicon nitride film；Silk-screen printing front electrode and rear electrode.In the present invention in order to fundamentally reduce due to body resistivity it is higher caused by the relatively low problem of fill factor, alkali soluble corrosion directly is carried out to silicon wafer in large-scale production and is thinned, to be obviously improved the fill factor of battery, and therefore promotes photoelectric conversion efficiency.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to a kind of efficient passivation contact crystalline silicon solar cell comprising and its system
Preparation Method.
Background technique
Pursue and improve battery conversion efficiency, while reducing and even maintaining manufacturing cost, be the target constantly pursued of industry and
Improve the place of itself competitiveness.In terms of high-efficiency battery, external numerous R&D institutions and enterprise have carried out a large amount of research, open
Numerous new structural high-efficiency batteries are sent out, passivation contact battery (passivated contact cell) becomes research at present
Hot spot.Its peak efficiency reaches 26.1%, is created by famous German Fraunhofer ISE research institute.Passivation contact
Technology uses the polysilicon membrane of silica and doping as passivation layer, can form good passivation effect, but due to mesh
Silicon wafer thickness used in preceding industry volume production is thicker, and the body resistivity of silicon wafer itself causes the reduction of fill factor, and
The defects of silicon wafer matrix state also limits the further promotion of open-circuit voltage.
Current solution mainly removes the defect state and optimization silk of silicon wafer matrix in such a way that chemical liquid cleans
The mode of wire mark slurry promotes open-circuit voltage and fill factor, although current scheme improve open-circuit voltage and filling because
Son, but can not fundamentally solve the problems, such as that silicon wafer body resistivity is higher.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of preparation sides of efficient passivation contact crystalline silicon solar cell comprising
Method improves the photoelectric conversion efficiency of battery.
The technical solution of the present invention is as follows: a kind of preparation method of efficient passivation contact crystalline silicon solar cell comprising, including with
Lower step:
S1, silicon wafer are pre-processed and are thinned: conventional cleaning are carried out to silicon wafer, it is 10~30% that volumetric concentration is used after cleaning
TMAH aqueous slkali to silicon wafer carry out reduction processing；
S2, making herbs into wool: conventional making herbs into wool is carried out to silicon wafer；
S3, diffusion: conventional boron is carried out to silicon wafer and is spread；
S4, single side remove the Pyrex layer at the back side；
S5, one texture-etching side is carried out to backside surface, then overleaf deposits one layer of silicon oxide layer；
Deposited polycrystalline silicon thin film on S6, silicon oxide layer overleaf；
S7, using HF cleaning silicon chip, then in front side of silicon wafer deposited oxide aluminium film and silicon nitride film, backside deposition nitrogen
SiClx film；
S8, silk-screen printing front electrode and rear electrode.
In the present invention in order to fundamentally reduce due to body resistivity it is higher caused by the relatively low problem of fill factor, advising
Alkali soluble corrosion directly is carried out to silicon wafer in modelling production to be thinned, to be obviously improved the fill factor of battery, and is therefore mentioned
Rise photoelectric conversion efficiency.By the present invention in that carrying out chemically treated mode to silicon wafer with TMAH aqueous slkali, the thickness of silicon wafer is reduced
Degree.
The thickness of required silicon wafer can be accurately controlled in the present invention by controlling the thinned time, controllable realization high quality
The relationship of slimline battery, thickness thinning and thinned time are that can be thinned 1 μm in every 30 seconds.Preferably, the TMAH aqueous slkali
Concentration be 20%, be thinned the time be 650s.
Preferably, in the step S5 carry out one texture-etching side when, using at least one of acid solution and aqueous slkali into
Row making herbs into wool.
Preferably, the silicon oxide layer with a thickness of 5~15nm.
Preferably, in the step S6 polysilicon membrane with a thickness of 150~250nm.
Preferably, the polysilicon membrane deposited in the step S6 is that phosphorous doped polysilicon film or intrinsic polysilicon are thin
Film, if intrinsic polysilicon film, subsequent progress phosphorus diffusion forms phosphorous doped polysilicon film.
Preferably, the silicon wafer is N-type silicon chip.
The present invention also provides the efficient passivation contact crystalline silicon solar cell comprisings that above-mentioned preparation method is prepared.
Compared with prior art, the beneficial effects of the present invention are embodied in:
(1) present invention is by way of reducing silicon wafer thickness, by the chemical action of TMAH aqueous slkali, so that silicon wafer matrix
The defects of state reduce, and greatly reduce because of the excessive problem of body resistivity caused by silicon wafer thickness, to be promoted
Battery open circuit voltage and fill factor, therefore can effectively improve the photoelectric conversion efficiency of battery；Meanwhile present invention process phase
To simple, it is suitably applied large-scale production.
(2) preparation method through the invention makes the open-circuit voltage of solar cell and fills out due to reducing silicon wafer thickness
Filling the factor has certain promotion, and final photoelectric efficiency is promoted.
(3) present invention process accurately can carry out being thinned for caustic corrosion for required thickness, by controlling invented technology
Used in aqueous slkali etching time, can prepare required ideal thickness N-type passivation contact silicon solar cell.
(4) present invention process is relatively easy, is easy to be integrated into the process flow of large-scale production, is suitably applied scale
Metaplasia produces.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of solar battery in the present invention.
Specific embodiment
Embodiment 1
A kind of preparation method of the ultra-thin N-type passivation contact crystalline silicon solar cell comprising of caustic corrosion, includes the following steps:
Using n type single crystal silicon as silicon substrate, the cleaning for carrying out routine first is subsequent, the TMAH for the use of volumetric concentration being 20%
Solution carries out thinned, process time 650s to the silicon wafer after cleaning.
To be thinned after silicon wafer carry out making herbs into wool, boron diffusion, after the completion of diffusion single side removal the back side BSG, then using into
Row back side one texture-etching side technique.Then the silicon oxide layer of one layer of 5~15nm and the intrinsic polycrystalline of 150~250nm are overleaf deposited
Silicon layer, depositional mode PECVD.
Phosphorus diffusion is then carried out, then silicon wafer is carried out dehydrating, it is subsequent in front side of silicon wafer deposition of aluminium oxide and nitridation
Silicon, backside deposition silicon nitride.
Finally, silk-screen printing front electrode and rear electrode.
Method mostly uses greatly existing conventional method in the present invention.It is prepared solar battery shown in FIG. 1,1,
Front electrode；2, front alumina passivation layer；3, front side silicon nitride silicon passivation layer；4, boron-dopped layer；5, silicon substrate；6, silica is thin
Film；7, phosphorous doped polysilicon film；8, back side silicon nitride silicon passivation layer；9, rear electrode.
As shown in table 1, battery efficiency has 0.5% for the battery electrical property comparison for the solar battery that the above method is prepared
It is promoted, open-circuit voltage has 0.008V promotion, and fill factor has 0.3% promotion.
The comparison of 1 battery efficiency of table
Claims (8)
1. a kind of preparation method of efficient passivation contact crystalline silicon solar cell comprising, which comprises the following steps:
S1, silicon wafer are pre-processed and are thinned: being carried out conventional cleaning to silicon wafer, used volumetric concentration for 10~30% after cleaning
TMAH aqueous slkali carries out reduction processing to silicon wafer；
S2, making herbs into wool: conventional making herbs into wool is carried out to silicon wafer；
S3, diffusion: conventional boron is carried out to silicon wafer and is spread；
S4, single side remove the Pyrex layer at the back side；
S5, one texture-etching side is carried out to backside surface, then overleaf deposits one layer of silicon oxide layer；
Deposited polycrystalline silicon thin film on S6, silicon oxide layer overleaf；
S7, using HF cleaning silicon chip, then in front side of silicon wafer deposited oxide aluminium film and silicon nitride film, backside deposition silicon nitride
Film；
S8, silk-screen printing front electrode and rear electrode.
2. the preparation method of efficient passivation contact crystalline silicon solar cell comprising as described in claim 1, which is characterized in that described
The concentration of TMAH aqueous slkali is 20%, and it is 650s that the time, which is thinned,.
3. the preparation method of efficient passivation contact crystalline silicon solar cell comprising as described in claim 1, which is characterized in that described
When carrying out one texture-etching side in step S5, making herbs into wool is carried out using at least one of acid solution and aqueous slkali.
4. the preparation method of efficient passivation contact crystalline silicon solar cell comprising as claimed in claim 3, which is characterized in that described
Silicon oxide layer with a thickness of 5~15nm.
5. the preparation method of the efficient passivation contact crystalline silicon solar cell comprising as described in Claims 1 to 4 is any, feature exist
In polysilicon membrane with a thickness of 150~250nm in the step S6.
6. the preparation method of efficient passivation contact crystalline silicon solar cell comprising as claimed in claim 5, which is characterized in that described
The polysilicon membrane deposited in step S6 be phosphorous doped polysilicon film or intrinsic polysilicon film, it is thin if intrinsic polysilicon
Film, subsequent progress phosphorus diffusion form phosphorous doped polysilicon film.
7. Claims 1 to 4 and 6 it is any as described in efficient passivation contact crystalline silicon solar cell comprising preparation method, it is special
Sign is that the silicon wafer is N-type silicon chip.
8. the efficient passivation contact crystalline silicon solar cell comprising that the preparation method as described in claim 1~7 is any is prepared.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910580146.0A CN110190155A (en) | 2019-06-28 | 2019-06-28 | A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof |
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| CN201910580146.0A CN110190155A (en) | 2019-06-28 | 2019-06-28 | A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446326A (en) * | 2020-02-28 | 2020-07-24 | 天津爱旭太阳能科技有限公司 | Solar cell single-side texturing process protected by mask |
| CN111627804A (en) * | 2020-04-14 | 2020-09-04 | 天津爱旭太阳能科技有限公司 | Solar cell single-side polishing process utilizing mask protection |
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Application publication date: 20190830 |