CN103560168A - Process for manufacturing PERC solar cell - Google Patents
Process for manufacturing PERC solar cell Download PDFInfo
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- CN103560168A CN103560168A CN201310501707.6A CN201310501707A CN103560168A CN 103560168 A CN103560168 A CN 103560168A CN 201310501707 A CN201310501707 A CN 201310501707A CN 103560168 A CN103560168 A CN 103560168A
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- back side
- silicon chip
- solar cell
- metal printing
- reverse side
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000007639 printing Methods 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001540 jet deposition Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract 3
- 238000009501 film coating Methods 0.000 abstract 3
- 230000005684 electric field Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a process for manufacturing a PERC solar cell, and belongs to the technical field of silicon solar cells. The process is mainly characterized in that between the front film coating process and the front metal printing process, printing of reverse side metal printing conductive materials, reverse side film coating and reverse side metal printing are sequentially conducted on the reverse side of a silicon slice. The process sequence is optimized, firstly, the conductive materials are printed on the reverse side of the silicon slice, and then film coating passivation is conducted on the reverse side. A passivation layer can be automatically aligned with the conductive materials, and therefore laser or chemical slotting step and equipment investment are saved, eventually the reverse side of the silicon slice only needs to be printed or deposited with a small number of conductive materials without needing the conductive materials for the whole side like a traditional PERC cell, and the materials can be saved.
Description
Technical field
The present invention relates to a kind of preparation technology of PERC solar cell, belong to silicon solar cell technologies field.
Background technology
PERC battery is a kind of high performance solar batteries structure, the same with conventional solar cells, is all that silicon chip is processed, thereby forms the solar battery sheet with PN joint.
Common preparation PERC solar cell completes by following series of process step at present:
Quarter, front plated film, back side coating film, laser beam drilling (or printing etching slurry is slotted and cleans), back metal printing, front metal printing and sintering are thrown, spread, carried on the back to silicon wafer wool making, the back of the body.The mode of laser or chemistry fluting forms cavity at silicon chip back side, makes slurry can contact with silicon substrate the efficient back surface field of formation and raises the efficiency.In silk screen printing, efficient back-surface-field (BSF) paste had both been used to form the local back surface field that aluminium back surface field is also used to connect each dispersion simultaneously simultaneously, formed loss on material.
Summary of the invention
The preparation technology who the object of this invention is to provide a kind of PERC solar cell, overcome existing preparation PERC solar cell and need at silicon chip back side, form cavity by the mode of laser or chemistry fluting, slurry can be contacted with silicon substrate and form the above-mentioned deficiency that forms loss on material that efficient back surface field is raised the efficiency existence, by the present invention, realizing the back of the body passivating material of aiming at voluntarily deposits, and use different electrode materials, thereby while greatly reducing production PERC solar cell,, to equipment, the cost of explained hereafter and material drops into.
The object of the invention is to be achieved through the following technical solutions, a kind of preparation technology of PERC solar cell, be included in making herbs into wool on silicon chip, back of the body throwing, diffusion, carry on the back quarter, front plated film and front metal printing and sintering, it is characterized in that, between described front plated film and front metal typography, at silicon chip back side, carry out successively printing, back side coating film and the back metal printing of back metal printing conductive material.
Describedly at silicon chip back side, carry out back metal printing and refer at silicon chip back side and adopt back-surface-field (BSF) paste to print, back-surface-field (BSF) paste is aluminium paste.
Describedly at silicon chip back side, carry out back side coating film and refer to deposition one deck insulator, described insulator is silica or silicon nitride or aluminium oxide or titanium oxide or amorphous silicon or its lamination, growing method is oxidation growth (thermally grown), PCVD (PECVD), low-pressure chemical vapor deposition (LPCVD), magnetron sputtering (sputter) rotating and depositing (spin on), jet deposition (spray on), owing to having stamped corresponding material at efficient back surface field place, insulator can be in these local depositions.
Back metal printing after described back side coating film refers at silicon chip back side employing electrocondution slurry prints or deposits, and electrocondution slurry is silver, aluminium, copper or their mixture.。
This patent, by Optimization Technology order, first carries out printing or the deposition of electric conducting material, and then plated film passivation is carried out in the back side at silicon chip back side.Like this, passivation layer can with electric conducting material auto-alignment before, thereby saved laser or step and the equipment investment of chemistry fluting.Finally, at silicon chip back side, can print a small amount of electric conducting material, and need the electric conducting material of whole without the traditional PERC battery of picture, thereby realize the object of saving material.
In sum, the present invention is highly to have reduced by following mode the production cost of efficient PERC battery, 1) saved laser or chemistry fluting step and equipment and operation cost of investment; 2) distinguish and form the material of back surface field and the electric conducting material of back electrode, thereby reduce material cost; 3), by the design of back electrode, reduce the use of electric conducting material, thereby reduce material cost; The present invention is by the improvement of processing step, realized the back of the body passivating material deposition of aiming at voluntarily, and used different electrode materials, thereby greatly reduced while producing PERC solar cell equipment, and the cost of explained hereafter and material drops into.
Accompanying drawing explanation
Fig. 1 is silicon chip sectional view of the present invention, and front side of silicon wafer forms PN and saves and cover antireflective coating, and the positive electrode of printing formation, and the back side of silicon chip can form the slurry of efficient back surface field in the printing of the position of needs;
Fig. 2 be the present invention on the basis of Fig. 1, deposit overleaf one deck insulator and reduce back side recombination rate;
Fig. 3 be the present invention on the basis of Fig. 2, the upper electric conducting material at a low price of printing (or plating or magnetron sputtering) connects back surface field electrode overleaf;
Fig. 4 be the present invention on the basis of Fig. 3, by sintering, front electric conducting material is contacted with emitter and forms positive electrode, make the back side form efficient back of the body electric field, and make to carry on the back electric field and electric conducting material is connected to form negative electrode
In figure, 1 positive electrode, 2 PN joints, 3 silicon chips, 4 efficient back of the body electric fields, 5 back surface field electrodes, 6 negative electrodes.
Embodiment
Further illustrate in conjunction with the accompanying drawings and embodiments the present invention, final structure of the present invention as shown in Figure 4.
Fig. 1 is the sectional view of solar silicon wafers, and silicon chip 3 is P type silicon chip, and its resistivity is 0.5-10 ohm-cm, and initial thickness is 50-250 μ m, and body minority carrier life time is greater than 0.5 ms.In preferred case (preferred embodiment), by chemical method (using KOH, NaOH, TMAH or similar liquid), make silicon chip surface reach the effect of making herbs into wool, to reduce reflectivity.Next, by the mode of High temperature diffusion, in the front of silicon chip, carry out N+ doping, form PN joint 2.Conventionally the degree of depth of PN joint 2 is 0.1-2 μ m, and square resistance is 5-150 ohm/square.Then, the N-type that silicon chip can remove silicon chip back side by wet etching is adulterated and removes positive phosphorosilicate glass, makes silicon chip back side reach certain polishing effect simultaneously, reduces backside surface recombination rate, improves battery efficiency.Then, in the front of silicon chip, grow or deposit the further reflectivity that reduces of recombination rate while that a kind of insulator lowers front surface.This insulator can be silica, silicon nitride, aluminium oxide, amorphous silicon or their lamination, and growing method can be oxidation growth (thermally grown), PCVD (PECVD), low-pressure chemical vapor deposition (LPCVD), magnetron sputtering (sputter) etc.Then, the mode by silk screen printing stamps positive electrode (as: silver, aluminium, copper and their mixture) in the front of silicon chip, and the position needing at the back side of silicon chip stamps the aluminium paste that can form efficient back surface field.
As shown in Figure 2, a kind of insulator of backside deposition at silicon chip lowers the recombination rate at the back side.This insulator can be silica, silicon nitride, aluminium oxide, titanium oxide, amorphous silicon or their lamination, and growing method can be oxidation growth (thermally grown), PCVD (PECVD), low-pressure chemical vapor deposition (LPCVD), magnetron sputtering (sputter) rotating and depositing (spin on), jet deposition (spray on) etc.Owing to having stamped corresponding material at efficient back surface field place, insulator can be in these local depositions.
Finally as shown in legend 4, by high temperature sintering, front electric conducting material is contacted with emitter and form positive electrode, make the back side form efficient back of the body electric field 5, and make to carry on the back electric field 5 and be connected to form negative electrode 6 with electric conducting material
In preferred case, N+ doping can be by the mode of Implantation, or the mode of laser doping realizes, and can form selective emitter simultaneously, and other are the same with preferred case.
In preferred version, if use N-type substrate, that diffusion will be used the doping of P type, and other are the same with preferred version.
In preferred version, if the local back surface field in the back side can form effective connection with back electrode, the processing step in that legend 3 is no longer required, and other are the same with preferred version.
In preferred version, during High temperature diffusion, solid, gas, the doped source of liquid can be used, and can use spray-on simultaneously, roll-on, the methods such as or spin-on are adulterated, and other are with preferably case is the same.
In preferred version, when using polysilicon as substrate, can pass through chemical method (using HNO3, HF, O3, H2O2, H2SO4 or similar liquid) and make silicon chip surface reach the effect of making herbs into wool, to reduce reflectivity, other are with preferably case is the same.
Claims (4)
1. the preparation technology of a PERC solar cell, be included in making herbs into wool on silicon chip, back of the body throwing, diffusion, carry on the back quarter, front plated film and front metal printing and sintering, it is characterized in that, between described front plated film and front metal typography, at silicon chip back side, carry out successively printing, back side coating film and the back metal printing of back metal printing conductive material.
2. the preparation technology of PERC solar cell according to claim 1, is characterized in that, describedly at silicon chip back side, carries out back metal printing and refers at silicon chip back side and adopt back-surface-field (BSF) paste to print, and back-surface-field (BSF) paste is aluminium paste.
3. the preparation technology of PERC solar cell according to claim 1, it is characterized in that, the described back side is carried out back side coating film and is referred to deposition one deck insulator, described insulator is silica or silicon nitride or aluminium oxide or titanium oxide or amorphous silicon or its lamination, growing method is oxidation growth (thermally grown), PCVD (PECVD), low-pressure chemical vapor deposition (LPCVD), magnetron sputtering (sputter) rotating and depositing (spin on), jet deposition (spray on), owing to having stamped corresponding material at efficient back surface field place, insulator can be in these local depositions.
4. the preparation technology of PERC solar cell according to claim 1, is characterized in that, the back metal printing after described back side coating film refers at silicon chip back side employing electrocondution slurry prints, and electrocondution slurry is silver, aluminium, copper or their mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310501707.6A CN103560168A (en) | 2013-10-23 | 2013-10-23 | Process for manufacturing PERC solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310501707.6A CN103560168A (en) | 2013-10-23 | 2013-10-23 | Process for manufacturing PERC solar cell |
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| Publication Number | Publication Date |
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| CN103560168A true CN103560168A (en) | 2014-02-05 |
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| CN201310501707.6A Pending CN103560168A (en) | 2013-10-23 | 2013-10-23 | Process for manufacturing PERC solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206211A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Back-passivated solar battery and manufacturing method therefor |
| CN110165016A (en) * | 2019-04-15 | 2019-08-23 | 南通苏民新能源科技有限公司 | It is a kind of for improving the production method of PERC battery |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
| CN112542530A (en) * | 2020-12-01 | 2021-03-23 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100243040A1 (en) * | 2009-03-25 | 2010-09-30 | Jong-Hwan Kim | Solar cell and fabrication method thereof |
| WO2011087341A2 (en) * | 2010-01-18 | 2011-07-21 | 현대중공업 주식회사 | Method for fabricating a back contact solar cell |
| CN103077975A (en) * | 2013-01-05 | 2013-05-01 | 中山大学 | Low-cost n-type dual-side solar battery and preparation method thereof |
| CN103346210A (en) * | 2013-06-26 | 2013-10-09 | 英利集团有限公司 | Solar cell and manufacturing method thereof |
-
2013
- 2013-10-23 CN CN201310501707.6A patent/CN103560168A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100243040A1 (en) * | 2009-03-25 | 2010-09-30 | Jong-Hwan Kim | Solar cell and fabrication method thereof |
| WO2011087341A2 (en) * | 2010-01-18 | 2011-07-21 | 현대중공업 주식회사 | Method for fabricating a back contact solar cell |
| WO2011087341A3 (en) * | 2010-01-18 | 2011-12-08 | 현대중공업 주식회사 | Method for fabricating a back contact solar cell |
| CN103077975A (en) * | 2013-01-05 | 2013-05-01 | 中山大学 | Low-cost n-type dual-side solar battery and preparation method thereof |
| CN103346210A (en) * | 2013-06-26 | 2013-10-09 | 英利集团有限公司 | Solar cell and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206211A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Back-passivated solar battery and manufacturing method therefor |
| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
| CN110165016A (en) * | 2019-04-15 | 2019-08-23 | 南通苏民新能源科技有限公司 | It is a kind of for improving the production method of PERC battery |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
| CN110854238B (en) * | 2019-11-26 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation method of monocrystalline silicon small cell |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
| CN112542530A (en) * | 2020-12-01 | 2021-03-23 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
| CN112542530B (en) * | 2020-12-01 | 2024-03-08 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
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Application publication date: 20140205 |