CN109841693A - A kind of passivation contact structures and solar battery - Google Patents
A kind of passivation contact structures and solar battery Download PDFInfo
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- CN109841693A CN109841693A CN201910137064.9A CN201910137064A CN109841693A CN 109841693 A CN109841693 A CN 109841693A CN 201910137064 A CN201910137064 A CN 201910137064A CN 109841693 A CN109841693 A CN 109841693A
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
This application discloses a kind of passivation contact structures and solar batteries, the passivation contact structures include substrate, first doped layer is set on the first surface region of the substrate, the passivation tunnel layer is arranged on the surface at least regional area of the substrate in first doped layer, the doping film layer is arranged in the passivation tunnel layer on the surface regional area of first doped layer, and the first medium film layer is arranged on the region that first doped layer, the doping film layer and the passivation tunnelling layer surface are collectively formed；The first electrode passes through the first medium film layer and contacts with the doping film layer.First doped layer and first electrode are separated, the high compound action of first electrode can be effectively shielded, reduce surface recombination significantly, good surface passivation is provided to battery, to improve the transfer efficiency of solar cell.
Description
Technical field
The present invention relates generally to technical field of solar batteries, and in particular to a kind of passivation contact structures and solar-electricity
Pond.
Background technique
Current solar cell chip architecture is to prepare one layer of doped layer on the surface of solar cell, is then made on it again
Standby media coating and metal electrode.In this case, the region of metal electrode and doped layer contact directly contacts.Usual situation
Under Carrier recombination center formd due to metal and semiconductor contact, cause the recombination rate of solar cell carrier high,
Inactivating performance is influenced, to cause declining to a great extent for battery performance.It would therefore be desirable to have preferable methods to reduce metal composite to blunt
Changing bring influences.
Summary of the invention
In view of drawbacks described above in the prior art or deficiency, it is intended to provide a kind of passivation contact structures and solar battery.
For overcome the deficiencies in the prior art, the technical solution provided by the present invention is:
A kind of passivation contact structures are characterized in that including substrate, the first doped layer, passivation tunnel layer, doping
Layer, first medium film layer and first electrode；
First doped layer is set on the first surface region of the substrate；
The passivation tunnel layer is arranged on the surface at least regional area of the substrate in first doped layer；
The doping film layer is arranged on the surface regional area of first doped layer in the passivation tunnel layer；
Institute is set on the region that first doped layer, the doping film layer and the passivation tunnelling layer surface are collectively formed
State first medium film layer；
The first electrode passes through the first medium film layer and contacts with the doping film layer.
Further, the passivation tunnel layer is identical as the size of first doped layer, the first medium film
Layer is set on the region that the passivation tunnel layer and the doping film surface are collectively formed.
Further, the passivation tunnel layer is identical as the doping size of film layer, the first medium film layer
It is set on the region that first doped layer, the passivation tunnel layer and the surface for adulterating film layer are collectively formed.
Further, the doping film layer includes semiconductor material and doped chemical, and the semiconductor material includes polycrystalline
One of silicon and amorphous silicon are a variety of；The doped chemical includes one of the 5th major element or third major element.
Further, the concentration of the doped chemical is greater than 1 × 1015A/cm3。
Further, it is described doping film layer with a thickness of 5-300nm.
Further, the passivation tunnel layer includes silica, silicon oxynitride, amorphous silicon, aluminium oxide, titanium oxide, nitridation
One of silicon and silicon carbide.
Further, it is described passivation tunnel layer with a thickness of 0.1-5nm.
Further, the square resistance of first doped layer is 50ohm/sq-300ohm/sq.
Second aspect is characterized in that the present invention also provides a kind of solar battery including second medium film
The second medium film layer is arranged on the second surface region of the substrate in layer, second electrode and the passivation contact structures,
The second electrode passes through the second medium film layer and contacts with the substrate.
Further, the substrate in the passivation contact structures is p-type silicon substrate, and the first doped layer is mixing for N-shaped
Diamicton, doping film layer are the doping film layer of N-shaped.
Further, the doping film layer includes semiconductor material and doped chemical, and the semiconductor material includes polycrystalline
One of silicon and amorphous silicon are a variety of；The doped chemical includes one of the 5th major element.
Further, the first medium film layer and the second medium film layer include silicon nitride, silica, nitrogen oxidation
One of silicon, aluminium oxide, silicon carbide are a variety of.
The third aspect, the present invention also provides a kind of solar battery, be characterized in that including the second doped layer,
Second medium film layer, second electrode and the passivation contact structures are arranged described on the second surface region of the substrate
Two doped layers, the second medium film layer is arranged on second doped layer, and the second electrode passes through the second medium film
Layer is contacted with second doped layer.
Compared with prior art, the beneficial effects of the present invention are:
Passivation contact structures of the invention include substrate, and first doping is arranged on the first surface region of the substrate
The passivation tunnel layer, the passivation is arranged on the surface at least regional area of the substrate in layer, first doped layer
The doping film layer is arranged on the surface regional area of first doped layer in tunnel layer, first doped layer, described
The first medium film layer is set on the region that doping film layer and the passivation tunnelling layer surface are collectively formed；The first electrode
It is contacted across the first medium film layer with the doping film layer.First doped layer and first electrode are separated, it can be effective
The high compound action for shielding first electrode, reduces surface recombination significantly, good surface passivation is provided to battery, to improve
The transfer efficiency of solar battery.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is the first structure chart of passivation contact structures provided in an embodiment of the present invention；
Fig. 2 is second of structure chart of passivation contact structures provided in an embodiment of the present invention；
Fig. 3 is the third structure chart of passivation contact structures provided in an embodiment of the present invention；
Fig. 4 is the first structure chart of p-type silicon substrate single side solar battery provided in an embodiment of the present invention；
Fig. 5 is the distribution schematic diagram of first electrode in Fig. 4；
Fig. 6 is the distribution schematic diagram of second electrode in Fig. 4；
Fig. 7 is p-type silicon substrate double-sided solar battery structure chart provided in an embodiment of the present invention；
Fig. 8 is the distribution schematic diagram of first electrode in Fig. 7；
Fig. 9 is the distribution schematic diagram of second electrode in Fig. 7；
Figure 10 is provided in an embodiment of the present invention include the second contact electrode layer p-type silicon substrate double-sided solar electricity
Pool structure figure；
Figure 11 is the structure chart of n-type silicon substrate double-sided solar battery provided in an embodiment of the present invention；
Figure 12 is second of structure chart of p-type silicon substrate double-sided solar battery provided in an embodiment of the present invention.
In figure: 1- substrate, the first doped layer of 2-, 3- are passivated tunnel layer, and 4- adulterates film layer, 5- first medium film layer, 6- the
Second medium film layer, 7- first contact electrode, the first connection electrode of 8-, and 9- second contacts electrode, the second connection electrode of 10-, 11- the
Two contact electrode layers, 12- alloy-layer.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that in order to
Convenient for description, part relevant to invention is illustrated only in attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As mentioned in the background art, current solar cell chip architecture is to prepare one layer on the surface of solar cell to mix
Diamicton, then preparation media film layer and metal electrode on it again.In this case, the area of metal electrode and doped layer contact
Domain directly contacts.Under normal conditions since metal and semiconductor contact form Carrier recombination center, solar cell is caused to carry
The recombination rate for flowing son is high, inactivating performance is influenced, to cause declining to a great extent for battery performance.It would therefore be desirable to have preferably do
Method, which reduces metal composite, influences passivation bring.
Referring to Fig. 1, the present embodiment provides a kind of passivation contact structures, including substrate 1, the first doped layer of doped layer 2, passivation
Tunnel layer, doping film layer, first medium film layer 5 and first electrode；On the first surface region of the substrate 1 described in compound setting
The first doped layer of doped layer 2；First doped layer of doped layer 2 is compound on the surface at least regional area of the substrate 1
The passivation tunnel layer 3 is set；The passivation tunnel layer 3 is on the surface regional area of first doped layer of doped layer 2
The compound setting doping film layer 4；First doped layer of doped layer 2, the doping film layer 4 and 3 table of passivation tunnel layer
The compound setting first medium film layer 5 on the region that face is collectively formed；The first electrode passes through the first medium film layer 5
It is contacted with the doping film layer 4.
First electrode is metal electrode, and first electrode is only contacted with the doping formation of film layer 4 after passing through first medium film layer 5,
Since first electrode and 2 emitter of the first doped layer are not in contact with shielding the high compound influence of metal contact, in this way may be used
The recombination rate of above-mentioned solar cell passivation contact zone is greatly reduced, to improve battery conversion efficiency.
Referring to fig. 2, as a kind of achievable mode, the size of the passivation tunnel layer 3 and first doped layer 2
Region identical, that the first medium film layer 5 is set to the passivation tunnel layer 3 and doping 4 surface of film layer is collectively formed
On.
Referring to Fig. 3, as a kind of achievable mode, the size phase of the passivation tunnel layer 3 and the doping film layer 4
Together, the first medium film layer 5 is set to the table of first doped layer 2, the passivation tunnel layer 3 and the doping film layer 4
On the region that face is collectively formed.
Substrate 1, the first doped layer 2 and doping film layer 4 is not particularly limited in the application, known to those skilled in the art
Solar battery substrate 1, those skilled in the art can select according to practical situations and properties of product
Adjustment.The principle that can be followed is: using the substrate 1 with the first conduction type, using first with the second conduction type
Doped layer 2 and doping film layer 4.Of course, the principle that can also be followed is: using the substrate 1 with the first conduction type, using
The first doped layer 2 and doping film layer 4 of first conduction type having the same.
Specifically, the material of the application substrate 1 can choose p-type silicon substrate, also can choose n-type silicon substrate.Wherein, when
When the material of substrate 1 selects p-type silicon substrate, the first doped layer 2 selects the doped layer of N-shaped, and doping film layer 4 selects the doping of N-shaped
Film layer；When the material of substrate 1 selects n-type silicon substrate, the first doped layer 2 selects the doped layer of p-type, and doping film layer 4 selects p-type
Doping film layer.
Equally specifically, the material of the application substrate 1 can choose p-type silicon substrate, also can choose n-type silicon substrate.Its
In, when the material of substrate 1 selects p-type silicon substrate, the first doped layer 2 selects the doped layer of p-type, and doping film layer 4 selects p-type
Adulterate film layer；When the material of substrate 1 selects n-type silicon substrate, the first doped layer 2 selects the doped layer of N-shaped, and doping film layer 4 is selected
Select the doping film layer of N-shaped.
It includes semiconductor material and doped chemical that the application, which adulterates film layer 4, and the semiconductor material includes polysilicon and non-
One of crystal silicon is a variety of；The doped chemical includes one of the 5th major element.
The concrete composition of semiconductor material is not particularly limited in the application, and those skilled in the art can be according to actually answering
Selection adjustment is carried out with situation and properties of product, one of composition form is using polysilicon as semiconductor material；In addition
A kind of composition form is using amorphous silicon and polysilicon mixing composition semiconductor material.
When using amorphous silicon and polysilicon as semiconductor material, the mixed proportion of the two is not particularly limited, this
Field technical staff can carry out according to practical situations and properties of product
Polysilicon accounts for 70%, and amorphous silicon accounts for 30%.
The concentration of the doped chemical is greater than 1 × 1015A/cm3, the doping concentration of optimization is greater than 1 × 1017A/cm3, more
It is greater than 1 × 10 for the doping concentration of optimization19A/cm3, as can reaching higher concentration such as 1 × 1020A/cm3, performance can be more preferably.
The doping concentration for wherein adulterating film layer 4 is higher, and resistivity is lower, then can provide better electric current transmission performance and electrode
Contact performance.
The application is that any element in the 5th major element is not particularly limited to doped chemical, those skilled in the art
Member can carry out selection adjustment according to practical situations and properties of product, can be using boron element as doped chemical, can also
To use P elements as doped chemical.When using boron element as doped chemical, the doping concentration of boron element is 1 × 1017A/
cm3；When using P elements as doped chemical, the doping concentration of P elements is 2 × 1020A/cm3。
It is described doping film layer 4 with a thickness of 5-300nm, preferably with a thickness of 10-250nm, more preferably with a thickness of 50-
150nm, most preferably with a thickness of 100nm.Those skilled in the art can select according to practical situations and properties of product
Select adjustment.
The passivation tunnel layer includes silica, silicon oxynitride, amorphous silicon, aluminium oxide, titanium oxide, silicon nitride and silicon carbide
One of, preferred scheme includes one of silica, titanium oxide and silicon carbide.
It is described passivation tunnel layer with a thickness of 0.1-5nm, preferably with a thickness of 1-5nm, more preferably with a thickness of 2nm.It is blunt
Changing tunnel layer should not be too thick, will be greatly reduced the probability that carrier passes through if passivation tunnel layer is thicker, so that electric
Laser propagation effect is deteriorated.
The square resistance of first doped layer 2 should not be too high, generally 50ohm/sq-300ohm/sq, it is preferable that first
The square resistance of doped layer 2 can be 100ohm/sq, 150ohm/sq, 200ohm/sq etc..Higher square resistance, although can
It can slightly increase lateral transport resistance, lower recombination-rate surface can be provided, open-circuit voltage and the short circuit of battery are improved
Electric current, therefore can be under the conditions of this square resistance, optimal enforcement mode, to reach higher battery conversion efficiency.
The embodiment of the invention also provides a kind of single side solar batteries, when the material of substrate 1 selects p-type silicon substrate,
First doped layer 2 selects the doped layer of N-shaped, and doping film layer 4 selects the doping film layer of N-shaped, as shown in Fig. 4 to Figure 10.It is described to mix
Miscellaneous element chooses one of the 5th major element.The solar battery includes second medium film layer 6, second electrode and above-mentioned
Contact structures are passivated, the second medium film layer 6 are set on the second surface region of the substrate 1, the second electrode passes through
The second medium film layer 6 is contacted with the substrate 1.
When the material of substrate 1 selects n-type silicon substrate, the first doped layer 2 selects the doped layer of p-type, and doping film layer 4 selects
The doping film layer of p-type.As shown in figure 11, solar battery include the second doped layer, second medium film layer, second electrode and according to
Aforementioned passivation contact structures, are arranged second doped layer on the second surface region of the substrate, on second doped layer
The second medium film layer is set, and the second electrode passes through the second medium film layer and contacts with second doped layer.
It should be noted that first surface refers to one of surface of solar battery, second surface is referred to too
Another surface of positive energy battery, does not refer specifically to the front or reverse side for solar battery.When first surface refers to too
When the front of positive energy battery, for the structure of solar battery as shown in Fig. 4 to Figure 11, the doped chemical for adulterating film layer chooses the 5th master
One of race's element；When first surface refers to the back side of solar battery, the structure of solar battery is as shown in figure 12.
The first medium film layer 5 and the second medium film layer 6 include silicon nitride, silica, silicon oxynitride, oxidation
One of aluminium, silicon carbide are a variety of, it is preferred to employ one of silicon nitride, silica and titanium oxide are a variety of, more
Preferably use silicon nitride, silicon oxide stack, those skilled in the art can according to practical situations and properties of product into
Row selection adjustment.
The first medium film layer 5 and the second medium film layer 6 are with a thickness of 40-100nm, preferably with a thickness of 60-
90nm, more preferably with a thickness of 85nm.
The overall refractive index of first medium film layer 5 and the second medium film layer 6 is 2.00-2.20, preferred whole folding
Penetrating rate is 2.05-2.15, and more preferably overall refractive index is 2.10.
Fig. 4 to fig. 6 is the structural schematic diagram of single side solar battery provided in an embodiment of the present invention.
First electrode includes the first contact electrode 7 and the first connection electrode 8, and the first connection electrode 8 and first contacts electrode 7
It is strip, by the another side of battery extended on one side corresponding thereto.First connection electrode 8 and first contacts electrode 7
Setting direction is orthogonal and connects in intersection, and passes through 8 derived current of the first connection electrode.
First contact electrode 7 passes through first medium film layer 5 and contacts with doping film layer 4；There are two types of settings for first connection electrode 8
Form, a kind of setting form are to contact across first medium film layer 5 with doping film layer 4, another setting form be not with doping
Film layer 4 contacts, and is directly arranged in first medium film layer 5.
The quantity of the first contact electrode 7 and the first connection electrode 8 is not particularly limited in the application, those skilled in the art
Selection adjustment can be carried out according to practical situations and properties of product, preferably first contacts 7 radical of electrode 100, the
One connection electrode, 8 radical 4.
The material of the first contact electrode 7 and the first connection electrode 8 is not particularly limited in the application, those skilled in the art
Selection adjustment, the first contact electrode 7 and/or the first connection electrode can be carried out according to practical situations and properties of product
8 material is including but not limited to one of silver, copper and nickel or a variety of, Preferable scheme is that silver-colored material.Such as the first contact electrode
7 use the silver paste for penetrating first medium film layer 5 as slurry, and the first connection electrode 8 is led using non-penetrating first medium film layer 5
Plasma-based material.
Second electrode includes the second contact electrode 9 and the second connection electrode 10.Second connection electrode 10 is in short strip shape, multiple
10 array arrangement of the second connection electrode of short strip shape, the second contact electrode 9 coat in second medium film layer 6, except the second connection electricity
Remaining region outside the setting area of pole 10, so that the second contact electrode 9 is directly contacted with substrate 1, derived current.
Fig. 7 to Fig. 9 is a kind of structural schematic diagram of double-sided solar battery provided in an embodiment of the present invention.
The first electrode of double-sided solar battery includes the first contact electrode 7 and the first connection electrode 8, too with above-mentioned single side
The set-up mode of positive energy battery is identical.
Second electrode includes the second contact electrode 9 and the second connection electrode 10.Second connection electrode 10 connect electricity with second
Pole 10 is strip, by the another side of battery extended on one side corresponding thereto.Second connection electrode 10 contacts electricity with second
The setting direction of pole 9 is orthogonal and connects in intersection, and passes through 10 derived current of the second connection electrode.
Figure 10 is another structural schematic diagram of double-sided solar battery provided in an embodiment of the present invention.
It is similar with above structure, the difference is that, it include one layer of III race's element between the second contact electrode 9 and substrate 1
Second contact electrode layer 11, due to second contact 11 doping concentration of electrode layer be higher than substrate 1, have back surface field
Effect, the open-circuit voltage of battery can be increased.
And as the scheme that advanced optimizes, can also be deposited between the second contact 9 doped layer of electrode and the second contact electrode 9
There is alloy-layer 12, alloy-layer 12 then can significantly improve the electric current collection effect of substrate 1 and second electrode, to improve electricity
The performance in pond.Above-mentioned alloy material is not particularly limited in the application, and those skilled in the art can be according to practical situations
Selection adjustment is carried out with properties of product, Preferable scheme is that using alusil alloy.
The material of the second contact electrode 9 and the second connection electrode 10 is not particularly limited in the application, those skilled in the art
Member can carry out selection adjustment, the second contact electrode 9 and/or the second connection electricity according to practical situations and properties of product
The material of pole 10 is including but not limited to one of silver, copper, al and ni or a variety of, Preferable scheme is that the second contact electrode 9 is adopted
With aluminium material is contained, the second connection electrode 10 is using the silver paste of non-penetrating second medium film layer 6 as slurry.
Aluminium paste is first printed using method for printing screen in the back side, is covered with the aluminium of strip distribution in the position of laser opening
The position of laser opening is completely covered in slurry, aluminium paste lines line width 150mm, aluminium paste lines；Then silk-screen printing side is overleaf used
Method is formed and the silver-colored connection electrode of positive connection electrode same shape and radical.
Present embodiments provide the preparation method of solar battery.Below using p-type monocrystalline silicon as the base of solar battery
The preparation method of single side solar battery and double-sided solar battery is described in detail in bottom 1.
The preparation method of single side solar battery is specific as follows:
1) it carries out damage to substrate 1 to handle, surface-texturing processing and cleaning.
Damage is carried out to substrate 1 using the 50-70 DEG C of solution containing KOH to handle, and is used under the conditions of 60-100 DEG C
Solution containing KOH carries out surface-texturing processing, forms the pyramid flannelette of 2-5um, and use and contain hydrofluoric acid and hydrochloric acid
Mixed solution cleaned, cleaning after the completion of dry.
2) it is doped on 1 first face pyramid flannelette of substrate.
POCl3 diffusion is carried out using tubular diffusion furnace, disposably forms pn-junction, the temperature of entire process conditions is 750-
840 DEG C, the time is 60-120 minutes；After pn-junction is formed, phosphorosilicate glass and polygon is carried out using containing the solution of HNO3 and HF acid
Edge doping, and the extra doping at the back side is removed；Then successively successively pass through NaOH, water, hydrofluoric acid and deionized water
It is cleaned, is dried after the completion of cleaning.
3) tunnel layer 3 is passivated in 1 front of substrate and adulterate the preparation of film layer 4.
The preparation of silica tunnel layer is carried out using low pressure chemical vapor deposition equipment, and is continued on silica tunnel layer
One layer of N-shaped polysilicon doping film layer 4 containing P elements doping of preparation.
4) localization of film layer 4 is adulterated.
Exposure mask preparation is carried out on doping 4 surface of film layer using silk-screen printing exposure mask, this exposure mask is not reacted with aqueous slkali；Then
Doping film layer 4 is corroded using tetramethyl ammonium hydroxide solution；The doping film layer 4 except first electrode area is removed, and
Exposure passivation tunnel layer 3；Then it is cleaned using hydrochloric acid solution, deionized water.
5) preparation of first medium film layer 5 and second medium film layer 6.
Using enhanced plasma chemical vapor deposition in battery front side deposited silicon nitride lamination, first medium film layer is completed
5 preparation；Using enhanced plasma chemical vapor deposition in the alumina layer of cell backside deposition 5-10nm, sink again on it
The silicon nitride of product 80-120nm, completes the preparation of second medium film layer.
6) preparation of first electrode and second electrode.
Using laser in 5 aperture of first medium film layer, scanning mode is to carry out pulsed to second medium film layer 6 locally to swash
Light irradiation processing, parallel lines direction of the scanning direction along doping, the region shape that second medium film layer 6 is irradiated in the hot spot of laser
At aperture, non-irradiated region does not form contact hole then.After the enterprising laser opening excessively of this contact bore region, second Jie is eliminated
Plasma membrane layer 6.Wherein the wavelength of aperture laser be 532nm, spot size be 80um diameter circular, scanning speed 10000mm/s,
Frequency is 10kHz.
In the region coating conductive material of the first face and the second face of battery after laser scanning.In the present embodiment we
Electrocondution slurry is carried out using screen printing mode to be graphically coated with.Using silver paste as the first contact 7 slurry of electrode, scanning is filled up
The multiple strips first disposed in parallel formed contact 7 setting area of electrode；Using the conduction of non-penetrating first medium film layer 5
Slurry fills up the setting area of setting direction with mutually perpendicular first connection electrode 8 of the first contact electrode 7.Second contact
Electrode 9, as slurry, fills up the second connection electrode 10 setting of the multiple short strip shapes for the array arrangement that scanning is formed using aluminium paste
Region, the second connection electrode 10, as slurry, are filled up scanning and are formed except second connects using the silver paste of non-penetrating second medium film layer 6
Remaining region outside the setting area of receiving electrode 10.
The preparation method of double-sided solar battery is specific as follows:
1) it carries out damage to substrate 1 to handle, surface-texturing processing and cleaning.
Damage is carried out to substrate 1 using the 50-70 DEG C of solution containing KOH to handle, and is used under the conditions of 60-100 DEG C
Solution containing KOH carries out surface-texturing processing, forms the pyramid flannelette of 2-5um, and use and contain hydrofluoric acid and hydrochloric acid
Mixed solution cleaned, cleaning after the completion of dry.
2) it is doped on 1 first face pyramid flannelette of substrate.
POCl is carried out using tubular diffusion furnace3Diffusion, disposably forms pn-junction, and the temperature of entire process conditions is 750~
840 DEG C, the time is 60-120 minutes；After pn-junction is formed, phosphorosilicate glass and polygon is carried out using containing the solution of HNO3 and HF acid
Edge doping, and the extra doping at the back side is removed；Then successively successively pass through NaOH, water, hydrofluoric acid and deionized water
It is cleaned, is dried after the completion of cleaning.
3) tunnel layer 3 is passivated in 1 front of substrate and adulterate the preparation of film layer 4.
The preparation of silica tunnel layer is carried out using low pressure chemical vapor deposition equipment, and is continued on silica tunnel layer
One layer of N-shaped polysilicon doping film layer 4 containing P elements doping of preparation.
4) localization of film layer 4 is adulterated.
Exposure mask preparation is carried out on doping 4 surface of film layer using silk-screen printing exposure mask, this exposure mask is not reacted with aqueous slkali；Then
Doping film layer 4 is corroded using tetramethyl ammonium hydroxide solution；The doping film layer 4 except first electrode area is removed, and
Exposure passivation tunnel layer 3；Then it is cleaned using hydrochloric acid solution, deionized water.
5) preparation of first medium film layer 5 and second medium film layer 6.
Using enhanced plasma chemical vapor deposition in battery front side deposited silicon nitride lamination, first medium film layer is completed
5 preparation；Using enhanced plasma chemical vapor deposition in the alumina layer of cell backside deposition 5-10nm, sink again on it
The silicon nitride of product 80-120nm, completes the preparation of second medium film layer.
6) preparation of first electrode and second electrode.
Using laser in 5 aperture of first medium film layer, scanning mode is to carry out pulsed to second medium film layer 6 locally to swash
Light irradiation processing, parallel lines direction of the scanning direction along doping, the region shape that second medium film layer 6 is irradiated in the hot spot of laser
At aperture, non-irradiated region does not form contact hole then.After the enterprising laser opening excessively of this contact bore region, second Jie is eliminated
Plasma membrane layer 6.Wherein the wavelength of aperture laser be 532nm, spot size be 80um diameter circular, scanning speed 10000mm/s,
Frequency is 10kHz.
In the region coating conductive material of the first face and the second face of battery after laser scanning.In the present embodiment we
Electrocondution slurry is carried out using screen printing mode to be graphically coated with.Using silver paste as the first contact 7 slurry of electrode, scanning is filled up
The multiple strips first disposed in parallel formed contact 7 setting area of electrode；Using the conduction of non-penetrating first medium film layer 5
Slurry fills up the setting area of setting direction with mutually perpendicular first connection electrode 8 of the first contact electrode 7.Second contact
9 aluminium paste of electrode fills up multiple strips second disposed in parallel that scanning is formed and contacts 9 setting area of electrode as slurry；The
Two connection electrodes 10 are used as slurry using silver paste, fill up setting direction with second and contact mutually perpendicular second connecting for electrode 9
The setting area of electrode 10.
7) metallization heat treatment is carried out.In the process, chain-type sintering furnace can be used, be sintered 850 DEG C of peak temperature, this
Temperature is to survey the temperature of silicon chip surface.Finally aluminium conductive material is directly contacted with substrate 1.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (14)
1. a kind of passivation contact structures, it is characterised in that: including substrate, the first doped layer, passivation tunnel layer, doping film layer, the
One media coating and first electrode；
First doped layer is set on the first surface region of the substrate；
The passivation tunnel layer is arranged on the surface at least regional area of the substrate in first doped layer；
The doping film layer is arranged on the surface regional area of first doped layer in the passivation tunnel layer；
Described the is arranged on first doped layer, the doping film layer and the region that is collectively formed of passivation tunnelling layer surface
One media coating；
The first electrode passes through the first medium film layer and contacts with the doping film layer.
2. passivation contact structures according to claim 1, it is characterised in that:
The passivation tunnel layer is identical as the size of first doped layer, and the first medium film layer is set to described blunt
Change on the region that tunnel layer and the doping film surface are collectively formed.
3. passivation contact structures according to claim 1, it is characterised in that:
The passivation tunnel layer is identical as the doping size of film layer, and the first medium film layer is set to described first
On the region that the surface of doped layer, the passivation tunnel layer and the doping film layer is collectively formed.
4. passivation contact structures according to any one of claim 1 to 3, it is characterised in that: the doping film layer includes
Semiconductor material and doped chemical, the semiconductor material include one of polysilicon and amorphous silicon or a variety of；The doping
Element includes one of the 5th major element or third major element.
5. the passivation contact structures of solar cell according to claim 4, which is characterized in that the concentration of the doped chemical
Greater than 1 × 1015A/cm3。
6. the passivation contact structures of solar cell according to claim 1, which is characterized in that the thickness of the doping film layer
For 5-300nm.
7. passivation contact structures according to claim 1, it is characterised in that: the passivation tunnel layer includes silica, nitrogen
One of silica, amorphous silicon, aluminium oxide, titanium oxide, silicon nitride and silicon carbide.
8. passivation contact structures according to claim 1 or claim 7, it is characterised in that: it is described passivation tunnel layer with a thickness of
0.1-5nm。
9. passivation contact structures according to claim 1, it is characterised in that: the square resistance of first doped layer is
50ohm/sq-300ohm/sq。
10. a kind of solar battery, it is characterised in that: including appointing in second medium film layer, second electrode and claim 1 to 9
Passivation contact structures described in one, are arranged the second medium film layer on the second surface region of the substrate, and described second
Electrode passes through the second medium film layer and contacts with the substrate.
11. solar battery according to claim 10, it is characterised in that:
The substrate in the passivation contact structures is p-type silicon substrate, and the first doped layer is the doped layer of N-shaped, adulterates film layer
For the doping film layer of N-shaped.
12. solar battery according to claim 11, it is characterised in that: the doping film layer include semiconductor material and
Doped chemical, the semiconductor material include one of polysilicon and amorphous silicon or a variety of；The doped chemical includes the 5th
One of major element.
13. solar battery according to any one of claims 10 to 12, it is characterised in that: the first medium film layer
It with the second medium film layer include one of silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide or a variety of.
14. a kind of solar battery, it is characterised in that: wanted including the second doped layer, second medium film layer, second electrode and right
Second doped layer is arranged on the second surface region of the substrate in passivation contact structures described in asking any one of 1 to 9,
The second medium film layer is set on second doped layer, and the second electrode passes through the second medium film layer and described the
The contact of two doped layers.
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