CN106409956B - A kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof - Google Patents
A kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
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- 239000002184 metal Substances 0.000 claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 238000012546 transfer Methods 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 39
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- 238000009792 diffusion process Methods 0.000 claims description 15
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000006071 cream Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
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- 150000002500 ions Chemical class 0.000 claims description 9
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8
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- 238000010146 3D printing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005215 recombination Methods 0.000 abstract description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
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- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof, includes successively from top to down：Front metal conducting wire, front localized contact metal electrode, front surface antireflection film, front passivating film, p-type doped layer, N-type crystal silicon matrix, N+ areas, backside passivation film, the back side locally connect metal electrode and back metal conducting wire.Thin plain conductor is combined together by conductive bonding material and localized contact metal electrode, forms the conductive composition body of an alternative thin grid line of battery.Main gate line or contact conductor export the electric current that battery front side and the back side collect.The structure of battery reduces the contact area of metal and silicon substrate, and recombination loss reduces, and significantly reduces the light shielded area of grid line, and then improve the transfer efficiency of battery, while reduce production cost by reducing silver paste dosage.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of N-type crystalline silicon double-sided solar battery structure
And preparation method thereof.
Background technology
From first piece of solar cell in 1954 since AT＆T Labs is born, crystal silicon solar energy battery has obtained extensively
General application, transfer efficiency are constantly promoted, and production cost continues to decline.At present, crystal silicon solar energy battery accounts for solar cell
More than 80% overall global market, the producing line transfer efficiency of crystalline silicon battery plate have broken through 20% at present, and global year is newly equipped with
Machine capacity about 50GW and speedup is apparent, constantly reduces with the degree electricity cost of thermal power generation, is expected to maintain an equal level therewith in the coming years.It is brilliant
Body silicon solar cell as a kind of clean energy resource environmental pressure etc. of restructuring the use of energy, alleviate important function increasingly
It highlights.
By the doping type of base material, crystal silicon solar energy battery is divided into P-type crystal silicon solar cell and N-type crystalline silicon too
Positive energy battery.Compared with P-type crystal silicon solar cell, N-type crystalline silicon solar cell has higher transfer efficiency and miscellaneous
Matter tolerance, and substantially without photo attenuation.Due to N-type crystalline silicon than P-type crystal silicon with longer minority carrier life time, so N
Type crystal silicon battery can usually make two-sided illuminated battery to increase the output power of battery, value added generally 20% with
On.
N-type crystalline silicon double-sided solar battery to promoted competitiveness, obtain bigger development and application, it is necessary to further
Transfer efficiency is improved, while reduces production cost, especially to reduce the cost for the silver electrode for accounting for battery production cost about 15%.
The front of N-type crystalline silicon double-sided solar battery mostly forms nearly hundred with backplate by the way of silver paste silk-screen printing at present
Thin grid and several main grids, the Material Cost that this process uses is expensive, and silver electrode can cause cell piece surface 5%~7%
Area, which is formed, blocks light, also results in resistance loss and recombination loss, makes N-type double-sided solar battery on odds for effectiveness
Fail to fully demonstrate.
How to reduce shading-area and keep being balanced between good electric conductivity, be that current N-type crystal silicon is two-sided too
One hot spot of positive energy battery electrode research.Have benefited from the progress of Size Technology and printing technology, the width of the thin grid of electrode is continuous
Reduce, predicted according to SEMI, the width to the thin grid of the year two thousand twenty will be further reduced to 35 microns hereinafter, simultaneously main grid will use it is more
Main grid and without main grid.Someone improves the depth-width ratio of thin grid line, the electric conductivity of electrode by the way of secondary double exposure in recent years
Also it makes moderate progress, but this method can increase the usage amount of silver paste.Also someone is using electrode fabrications sides such as photoetching plating, LIP, ink-jets
Method although relatively thin thin grid line can be produced, is also added significantly to the complexity of technique simultaneously, so being not suitable for
The industrialized production of N-type crystal silicon battery.Filament is passed through conductive bond body and silicon chip matrix or localized metallic by somebody
Electrode is combined together, and to substitute traditional thin grid line, but there is no in N-type crystal silicon double-sided solar for these method for making its electrode
It is applied in the electrode of battery.
Invention content
The object of the present invention is to provide a kind of N-type crystalline silicon double-sided solar battery structures and preparation method thereof, use
The localized metallic electrode in front and the back side is connected the positive and negative electrode to form battery by thin plain conductor.The structure of battery makes
The contact area of metal and silicon substrate reduces, and recombination loss reduces, and significantly reduces the light shielded area of grid line, and then improve
The transfer efficiency of battery, while reduce production cost by reducing silver paste dosage.
In order to achieve the above objectives, the present invention uses following technical scheme：
A kind of N-type crystalline silicon double-sided solar battery structure, which is characterized in that include successively from top to down：Front metal
Conducting wire, front localized contact metal electrode, front surface antireflection film, front passivating film, p-type doped layer, N-type crystal silicon matrix, N+ areas,
Backside passivation film, the back side locally connect metal electrode and back metal conducting wire；
Front metal conducting wire connect to form local hang with front localized contact metal electrode by front side conductive bond material
Conductive composition body of the hollow structure as battery front side electrode, and pass through front main grid line that setting connect with front metal conducting wire or
Positive electrode lead exports the electric current that front is collected；
Back metal conducting wire connect to form local hang with rear side local contact metal electrode by back side conductive bonding material
Conductive composition body of the hollow structure as cell backside electrode, and pass through back side main gate line that setting connect with back metal conducting wire or
Negative electrode lead exports the electric current that the back side is collected.
As a further improvement on the present invention, localized contact metal electrode in front is arranged in N-type crystalline silicon with regular pattern
On the positive antireflective coating of piece, front localized contact metal electrode penetrates the positive antireflective coating of N-type crystalline silicon piece and passivating film
Ohmic contact is formed with p-type doped layer,
Rear side local contact metal electrode is arranged in regular pattern on the passivating film at the N-type crystalline silicon piece back side, back side office
Portion's contacting metal electrode penetrates the passivating film at the N-type crystalline silicon piece back side and N+ areas form Ohmic contact.
As a further improvement on the present invention, regular pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimensional geometry figure
The combination of shape；One-dimensional geometric figure is selected from：Straight line, line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from：Circle
Shape, ellipse, rectangle, spindle, annular, polygon, polygonal or sector.
As a further improvement on the present invention, the line width of the one-dimensional geometric figure is 30~200um, length for 0.05~
160mm；It is 0.25~2.5mm with linear spacing two neighboring in a line, two neighboring linear spacing is 0.5 in same row
~3mm；
The size of the two-dimentional geometric figure is 30~200um, with figure two neighboring in a line spacing for 0.5~
2mm, the spacing of two neighboring figure is 0.5~3mm in same row.
As a further improvement on the present invention, the front metal conducting wire and back metal conducting wire be copper wire, silver wire,
Silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire, a diameter of 20~100um；The front side conductive bond material and the back of the body
Face conductive bonding material is tin cream, Sn-containing alloy, conducting resinl or conductive film.
As a further improvement on the present invention, front passivating film for aluminum oxide film, silicon oxide film, silicon nitride film,
One or more laminations in silicon oxynitride film, thin film of titanium oxide, carborundum films, amorphous silicon membrane are formed, front passivation
The integral thickness of film is 1~50nm；
Front surface antireflection film is silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, silicon carbide are thin
One or more laminations in film are formed, and antireflective coating integral thickness is 50~100nm；
Backside passivation film for silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, thin film of titanium oxide,
One or more laminations in carborundum films are formed, and backside passivation film integral thickness is 20~150nm.
As a further improvement on the present invention, using light texture is fallen into, it is golden word to fall into light texture on the surface of N-type double-side cell
Tower, inverted pyramid, Nano/micron porous structure；N-type crystalline silicon piece is n type single crystal silicon piece or N-type polycrystalline silicon piece, thickness are
100~200um.
As a further improvement on the present invention, the p-type doped layer contacted with front localized contact metal electrode is uniformly mixes
Diamicton or selective doping layer, the sheet resistance of Uniform Doped layer is 50~100 Ω/；It is shallow to mix region sheet resistance in selective doping layer
For 50~150 Ω/, heavily doped area's sheet resistance is 10~50 Ω/；Front localized contact metal electrode is distributed in heavily doped area distribution
Figure within；
The N+ areas contacted with rear side local contact metal electrode be Uniform Doped floor or selective doping floor, Uniform Doped layer
Sheet resistance be 20~100 Ω/；In selective doping layer, for shallow region sheet resistance of mixing for 50~150 Ω/, heavily doped area's sheet resistance is 10
~50 Ω/, rear side local contact metal electrode are distributed within the figure of heavily doped region distribution overleaf.
As a further improvement on the present invention, when setting front main grid line and back side main gate line, front main grid line and the back of the body
Face main gate line is set respectively with front metal conducting wire and back metal wire crossbar, and all front metal conducting wires pass through front
Conductive bonding material connect to form Hanging sectionally structure with front main grid line；All back metal conducting wires pass through back side conduction
Bond material connect to form Hanging sectionally structure with back side main gate line；
When setting positive electrode lead and negative electrode lead, positive electrode lead and negative electrode lead connect all fronts respectively
Plain conductor, all back metal conducting wires, and positive electrode lead and negative electrode lead are positioned opposite.
A kind of preparation method of N-type crystalline silicon double-sided solar battery structure, includes the following steps：
(1) N-type crystalline silicon piece is subjected to surface-texturing processing；
(2) in the front of N-type crystalline silicon piece using low pressure diffusion, normal pressure diffusion, ion implanting, laser doping or impurity slurry
Material coating collaboration heat-treating methods form p-type doped layer, and p-type doped layer is adulterated for uniformity or selective doping；
(3) at the back side of N-type crystalline silicon piece is using normal pressure diffusion, low pressure diffusion, ion implanting, coating phosphorus slurry collaboration heat
Reason or doped dielectric film collaboration heat-treating methods form N+ areas；
(4) chemical cleaning is carried out to the silicon chip after doping treatment；
(5) front passivating film and front surface antireflection film are sequentially depositing on p-type doped layer surface；The back side is deposited in N+ areas
Passivating film；
(6) using silk-screen printing, ink-jet, 3D printing, laser transfer, chemical attack collaboration gas phase in front surface antireflection film
Deposition, photoinduction plating or electric plating method make the front localized contact metal electrode of array distribution；
(7) it is overleaf sunk on passivating film using silk-screen printing, ink-jet, 3D printing, laser transfer, chemical attack collaboration gas phase
Product, photoinduction plating or electric plating method make the rear side local contact metal electrode of array distribution；
(8) drying and processing is carried out；
(9) it is heat-treated, front localized contact metal electrode penetrates front surface antireflection film and front passivating film is mixed with p-type
Diamicton forms good Ohmic contact；Rear side local contact metal electrode penetrates backside passivation film and forms Ohmic contact with N+ areas；
(10) conductive bonding material is made on front localized contact metal electrode and rear side local contact metal electrode；
(11) by front metal conducting wire and back metal conducting wire respectively along the line direction of front and back localized contact metal electrode
Drawing is simultaneously tightly attached on conductive bonding material；
(12) it is heat-treated, the plain conductor of front and back is made to pass through conductive bonding material and localized contact metal electrode
It is combined together, forms the positive and negative electrode of N-type crystalline silicon double-sided solar battery.
The present invention N-type crystalline silicon double-sided solar battery structural advantages be：Firstth, front, backplate are using part
Hanging thin grid line, the thin grid line of Hanging sectionally are connected and composed by thin plain conductor by conductive bonding material and localized metallic electrode,
Thin plain conductor especially fine copper wire instead of front and the part silver in backplate, reduces N-type crystal silicon double-side cell silver
Electrode usage amount, so as to reduce the manufacture cost of N-type crystal silicon double-side cell；Secondth, the thin metal of battery front side and the back side is led
Line has higher grid line depth-width ratio, and is Hanging sectionally structure, this can reduce the contact area of metal and silicon substrate, multiple
Closing loss reduces, and due to the multiple reflections of light, the silicon face in hanging region can also be used as light-receiving surface, significantly reduce grid line
Light shielded area, and then improve the transfer efficiency of battery；Battery production method described in third, this patent is simple, reliable,
Suitable for industrialized production.
The preparation method of the present invention carries out in a manner that the structure of battery carries out from inside to outside, and this part may be used
Various ways make, and simple for process, operability is strong.N-type double-side cell method for making its electrode of the present invention is simple, can
It leans on, suitable for industrialized production.
Description of the drawings
Partial cutaway of the N-type double-side cell that Fig. 1 is front, the back side is selective doping along thin grid line (plain conductor) direction
Face schematic diagram.
Fig. 2 be front Uniform Doped, back side selective doping N-type double-side cell show along the part section in main gate line direction
It is intended to.
Partial cutaway schematic of the N-type double-side cell that Fig. 3 is front, the back side is Uniform Doped along thin grid line direction.
Fig. 4 be front selective doping, back side Uniform Doped N-type double-side cell show along the part section in main gate line direction
It is intended to.
Fig. 5 is the partial schematic plan view one for having main grid front or backplate.
Fig. 6 is the partial schematic plan view two of no main grid front or backplate.
In figure, 1 is front surface antireflection film, and 2 be front passivating film, and 3 be p-type crystal silicon layer (uniform or selective heavy doping), 4
It is N+ areas (uniform or selective heavy doping) for N-type crystal silicon matrix, 5,6 be backside passivation film, and 7 be positive electrode lead, and 8 be front
Plain conductor, 9 be front main grid line, and the viscous conductive bonding material in 10 fronts, 11 be front localized contact metal electrode, and 12 be the back side
Plain conductor, 13 be back side main grid, and 14 be back side conductive bonding material, and 15 be rear side local contact metal electrode, and 16 be negative electricity
Pole lead.
Specific embodiment
The present invention is described in further detail below in conjunction with attached drawing embodiment.
As shown in Figures 1 to 4, a kind of N-type crystalline silicon double-sided solar battery structure of the present invention, battery structure is from top to down
Including：Front metal conducting wire 8, front localized contact metal electrode 11, front surface antireflection film 1, front passivating film 2, p-type doped layer
3rd, N-type crystal silicon matrix 4, N+ areas 5, backside passivation film 6, rear side local contact metal electrode 15 and back metal conducting wire 12.Wherein,
The front of battery is made of with backplate main gate line and the thin grid line of Hanging sectionally, can also be completely by the thin grid line structure of Hanging sectionally
Into.The thin grid line of Hanging sectionally is made of localized contact metal electrode and thin plain conductor, and localized metallic electrode is with one-dimensional pattern, two
Dimension figure or a peacekeeping two-dimensional combination graphic array are distributed in the front and back of N-type cell, and (can generally mix with silicon substrate
Miscellaneous or heavy doping) form good Ohmic contact.Thin plain conductor (copper wire, silver wire, silver-coated copper wire, nickel plated copper wire,
Tinned wird or alloy wire) it is combined together by conductive bonding material and localized contact metal electrode, formation one is alternative
The conductive composition body of the thin grid line of battery.Main gate line or contact conductor export the electric current that battery front side and the back side collect.
Specifically, front electrode intersected vertically by front main grid line 9 and the thin grid line of front Hanging sectionally form or all by
Hanging sectionally thin grid line in front is formed.Wherein Hanging sectionally thin grid line in front is thin by front localized contact metal electrode 11 and front
Plain conductor 8 is formed, and front localized contact metal electrode 11 is with one-dimensional pattern, X-Y scheme or a peacekeeping two-dimensional combination figure battle array
Column distribution in the front of N-type cell, front localized contact metal electrode 11 penetrate front surface antireflection film 1 and front passivating film 2 with
Silicon substrate forms good Ohmic contact；Positive thin plain conductor 8 passes through front side conductive bond material 10 and positive localized metallic
Electrode 11 is combined together.
Backplate is intersected vertically by back side main gate line 13 and the thin grid line of back side Hanging sectionally and formed or all by positive office
Vacantly thin grid line is formed in portion.Wherein Hanging sectionally thin grid line in the back side is led by the thin metal of rear side local contact metal electrode 15 and the back side
Line 12 is formed, and rear side local contact metal electrode 15 is with one-dimensional pattern, X-Y scheme or a peacekeeping two-dimensional combination graphic array point
At the back side of N-type cell, rear side local contact metal electrode 15 penetrates backside passivation film 6 and is contacted with back side N+ areas 5 cloth；The back side is thin
Plain conductor 12 is combined together by back side conductive bonding material 14 and back side partial metallic contact electrode 15.
As it can be seen in figures 5 and 6, N-type crystalline silicon double-sided solar battery front of the present invention, backplate can not also
Main gate line is needed, is made of completely the thin grid line of Hanging sectionally, battery front side one end is equipped with front electrode and draws section, and cell backside is another
One end is equipped with backplate and draws section, draws section plain conductor and is used to export in the electric current collected.
Conductive bonding material is tin cream, Sn-containing alloy, conducting resinl or conductive film., conductive bonding material and front are local
The method of contacting metal electrode connection cooperates with heat treatment, thermocompression bonding, ultrasonic bond, spot welding for silk-screen printing collaboration heat treatment, ink-jet
And it pastes.
The present invention provides a kind of N-type crystalline silicon double-sided solar battery structure, preparation method can as follows into
Row：
(1) N-type crystalline silicon piece being subjected to surface-texturing processing, silicon chip can be n type single crystal silicon piece, N-type polycrystalline silicon piece,
The methods of chemical liquid burn into plasma etching, metal catalytic, laser ablation may be used in texture processing.
Processing is doped in the front of N-type silicon chip, impurity source can be BBr3、B2O3、BCl3、BF3、B2H6, boracic mixes
Miscellaneous dose etc., low pressure diffusion, normal pressure diffusion, ion implanting, laser doping, the heating of impurity slurry coating may be used in the method for doping
The methods of processing, doped dielectric film heat treatment.The p-type doped layer 3 contacted with front localized contact metal electrode 11 is uniform
Doped layer, sheet resistance are 50~100 Ω/；Or be selective doping layer, shallow region sheet resistance of mixing is 50~150 Ω/, heavily doped area
Sheet resistance is 10~50 Ω/, and front localized contact metal electrode 11 is distributed within the figure of heavily doped area distribution.
Processing is doped at the back side of silicon chip, impurity source can be POCl3、PH3, phosphoric acid, P2O5Or other phosphorous slurries
Deng, doping method may be used normal pressure diffusion, low pressure diffusion, ion implanting, laser doping, at impurity slurry coating collaboration heat
The methods of reason, doped dielectric film collaboration heat treatment.The N+ areas 5 contacted with rear side local contact metal electrode 15 are Uniform Doped,
Sheet resistance is 20~100 Ω/；Or for selective doping, shallow region sheet resistance of mixing for 50~150 Ω/, heavily doped area's sheet resistance for 10~
50 Ω/, rear side local contact metal electrode 15 are distributed within the figure of heavily doped region distribution overleaf.Back side selectivity
Heavy doping pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from：Directly
Line, line segment, phantom line segments or camber line；Two-dimentional geometric figure is selected from：Circle, ellipse, spindle, annular, polygon, polygonal or
It is fan-shaped.The line width of the one-dimensional geometric figure is 30~200um, and length is 0.05~160mm；With two neighboring linear in a line
Spacing for 0.25~2.5mm, two neighboring linear spacing is 0.5~3mm in same row.The ruler of the two-dimentional geometric figure
Very little is 30~200um, and the spacing with figure two neighboring in a line is 0.5~2mm, the spacing of two neighboring figure in same row
For 0.5~3mm.This process both can overleaf passivating film be carried out according to the doping method of use before or after depositing.
(2) chemical cleaning is carried out to the silicon chip after doping treatment.
(3) in the passivating film 2 of front 1~50nm of deposition of N-type silicon chip and the antireflective coating 1 of 50~100nm；Overleaf sink
The passivating film 6 (or doping passivating film) of 20~150nm of product.Front passivating film 2 is aluminum oxide film, silicon oxide film, silicon nitride
One or more laminations in film, silicon oxynitride film, thin film of titanium oxide, carborundum films, amorphous silicon membrane are formed；Front
Antireflective coating 1 for silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, one kind in carborundum films or
A variety of laminations are formed；The passivating film 6 at the back side is silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, oxygen
The one or more laminations changed in titanium film, carborundum films are formed.
(4) array distribution being in direct contact with silicon substrate is made on the front of N-type silicon chip by specific figure locally to connect
Metal electrode 11 is touched, front localized contact metal electrode 11 can be silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode
Or metal composite electrode, production method may be used silk-screen printing, steel plate printing, ink-jet, 3D printing, laser transfer etc. or can
The methods of with using laser or chemical attack collaboration vapor deposition, photoinduction plating, plating.The distribution patterns of localized metallic are one
Dimension, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from：Line segment, phantom line segments or camber line；
Two-dimentional geometric figure is selected from：Circle, ellipse, spindle, annular, polygon, polygonal or sector.The one-dimensional geometric figure
Line width for 30~200um, length is 0.05~160mm；It is 0.25~2.5mm with linear spacing two neighboring in a line,
Two neighboring linear spacing is 0.5~3mm in same row.The size of the two-dimentional geometric figure be 30~200um, same to a line
In two neighboring figure spacing for 0.5~2mm, the spacing of two neighboring figure is 0.5~3mm in same row.Positive part
Silicon substrate under metal can be general doping or heavy doping.
(5) rear side local contact metal electrode 15 is made at the back side of silicon chip, rear side local contact metal electrode 15 can be with
It is that screen printing may be used in silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode, production method
Brush, steel plate printing, ink-jet, 3D printing, laser transfer etc..
(6) it is dried at 200~300 DEG C.
(7) it is heat-treated at 300~900 DEG C, makes front and the localized metallic electrode and silicon substrate of back side array distribution
Body forms good Ohmic contact.
(8) conductive bonding material 10 is made on the localized metallic electrode at N-type silicon chip front and the back side and conduction combines material
Material 14, printing, ink-jet, thermocompression bonding, ultrasonic bond, spot welding or stickup etc. may be used in the method for making.
(9) thin plain conductor along the line direction drawing of front and back localized metallic electrode and is tightly attached to conductive bonding material
On, the material of thin plain conductor is copper wire, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire etc., thin metal
A diameter of 20~100um of conducting wire.
(10) plain conductor of thin front and back is made to pass through conductive bonding material and localized metallic electrode at 100~400 DEG C
It is combined together, formation can be as N-type crystal silicon battery front and the conductive composition body of backplate.
Embodiment 1：
(1) the incorgruous corrosion in 80 DEG C or so of KOH solution by n type single crystal silicon piece obtains surface pyramid structure.
(2) in front side of silicon wafer, with BBr3As impurity, the uniform diffusion of 40 Ω/ is diffuseed to form in 950 DEG C or so low pressure
Layer.
(3) in silicon chip back side, with POCl3As impurity, the uniform expansion of 40 Ω/ is diffuseed to form in 800 DEG C or so low pressure
Dissipate layer.
(4) by special pattern mask is sprayed on the front of silicon chip and the back side.The figure of front and backside mask is four etc.
The combination of main grid and array-like line segment away from distribution, wherein the width of single line segment is 40um, length 0.5mm, in a line
The spacing of two neighboring line segment is 0.5mm, and the spacing of two neighboring line segment is 1.5mm in same row.The width of main grid is
1.2mm, length 156mm.
(5) positive Pyrex and the phosphorosilicate glass at the back side are removed using wet etching.At the front of silicon chip and the back side,
The region for having mask forms the low square resistance of about 50 Ω/, and the high square resistance of about 90 Ω/ is formed in the region of no mask.
(6) aluminium oxide of 5nm or so is first deposited in front, deposits the silica of 60nm or so later；Overleaf deposit
The silica of 80nm or so.
(7) the localized metallic electricity of positive heavy doping graphic making array distribution is pressed using the method for silk-screen printing in front
Pole, this process are formed simultaneously 4 silver-colored primary gate electrodes being equally spaced.
(8) it is dried at 200~300 DEG C.
(9) overleaf using the method for silk-screen printing by the localized metallic electricity of back side heavy doping graphic making array distribution
Pole, this process are formed simultaneously 4 silver-colored primary gate electrodes being equally spaced.
(10) it is dried at 200~300 DEG C.
(11) it is heat-treated at 300~900 DEG C, battery front side and the metal paste of back side array distribution is made to penetrate and subtract
Reflectance coating and passivating film form good Ohmic contact with the heavily doped region of silicon substrate.
(12) tin cream is made using the method for silk-screen printing on localized metallic electrode of the front with the back side.
(13) fine copper wire along the line direction drawing of front and back side localized metallic electrode and is tightly attached on tin cream, thin copper
A diameter of 40um of line.
(14) fine copper wire is made to pass through tin cream at 300 DEG C to be combined together with localized metallic electrode, formation can be used as N-type brilliant
Silion cell front and the conductive composition body of backplate.
Embodiment 2：
(1) n type single crystal silicon piece incorgruous corrosion in 80 DEG C or so of KOH solution obtains surface pyramid structure.
(2) in the front coating boron slurry of silicon chip.
(3) boron of front side of silicon wafer is starched and dried.
(4) at the back side of silicon chip by special pattern printing phosphorus slurry, printed pattern is the line segment of array distribution, single line segment
Width is 50um, length 3mm, and the spacing with line segment two neighboring in a line is 2mm, in same row between two neighboring line segment
Away from for 3mm.
(5) phosphorus of silicon chip back side regional area is starched and dried.
(6) it is heat-treated under 950 DEG C or so, the boron atom of front side of silicon wafer and the phosphorus atoms at the back side is made to expand to silicon substrate
It dissipates, so as to form the uniform p type diffused layer of 100 Ω/ in front side of silicon wafer, forms 40 Ω/ parts N+ types in silicon chip back side and expand
Dissipate layer.
(7) Pyrex of front side of silicon wafer and the phosphorosilicate glass at the back side are removed using wet etching.
(8) aluminium oxide of 5nm or so is first deposited in front, deposits the silicon nitride of 70nm or so later；Overleaf deposit
The silicon nitride of 50nm or so.
(9) the localized metallic electrode of array distribution, printed pattern are made by special pattern of the method for ink-jet in front
Using line segment shape array, width 50um, length 3mm, the spacing with line segment two neighboring in a line is 2mm, in same row
The spacing of two neighboring line segment is 3mm.
(10) it is dried at 200~300 DEG C.
(11) overleaf using the method for ink-jet by the localized metallic electrode of the heavy doping graphic making array distribution at the back side.
(12) it is dried at 200~300 DEG C.
(13) it is heat-treated at 300~900 DEG C, battery front side and the metal paste of back side array distribution is made to penetrate and subtract
Reflectance coating and passivating film form good Ohmic contact with silicon substrate.
(14) tin cream is made using the method for printing on localized metallic electrode of the front with the back side.
(15) thin silver wire along the line direction drawing of front and back side localized metallic electrode and is tightly attached on tin cream, thin silver
A diameter of 50um of line.The side of positive thin silver wire is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge, to make
Collect derived lead for battery front side electric current.The side of the thin silver wire in the back side is flushed with silicon chip edge, and opposite side compares silicon chip edge
About 3mm is grown, to collect derived lead as cell backside electric current.Front is positioned opposite with the lead at the back side.
(16) thin silver wire is made to pass through tin cream at 400 DEG C to be combined together with localized metallic electrode, formation can be used as N-type brilliant
Silion cell front and the conductive composition body of backplate.
Embodiment 3：
(1) n type single crystal silicon piece incorgruous corrosion in 80 DEG C or so of NaOH solution obtains surface pyramid structure.
(2) boron atom is mixed using the method for ion implanting in the front of N-type silicon chip, boron source uses BF3, 80 Ω of formation/
The uniform diffusion layer of.
(3) phosphorus atoms are mixed using the method for ion implanting at the back side of N-type silicon chip, boron source uses PH3, 70 Ω of formation/
The uniform diffusion layer of.
(4) chemical cleaning is carried out to the silicon chip after ion implanting.
(5) aluminium oxide of 3nm or so is first deposited in front, deposits the silicon nitride of 80nm or so later；Overleaf deposit
The silicon nitride of 80nm or so.
(6) localized contact metal electricity in front is prepared by array distribution figure using the method for silk-screen printing in the front of silicon chip
Pole, printed pattern are spotted array, and a diameter of 60um of a single point, the centre-to-centre spacing with point two neighboring in a line is 1mm, same
The centre-to-centre spacing of two neighboring line point is 1.5mm in row.
(7) it is dried at 200~300 DEG C.
(8) rear side local contact metal electricity is prepared by array distribution figure using the method for silk-screen printing at the back side of silicon chip
Pole, printed pattern are spotted array, and a diameter of 60um of a single point, the centre-to-centre spacing with point two neighboring in a line is 1mm, same
The centre-to-centre spacing of two neighboring line point is 1.5mm in row.
(9) it is dried at 200~300 DEG C.
(10) it is heat-treated at 300~900 DEG C, battery front side and the metal paste of back side array distribution is made to penetrate and subtract
Reflectance coating and passivating film form good Ohmic contact with silicon substrate.
(11) tin cream is made using the method for silk-screen printing on localized metallic electrode of the front with the back side.
(12) thin silver wire along the line direction drawing of front and back side localized metallic electrode and is tightly attached on tin cream, thin silver
A diameter of 40um of line.The side of positive thin silver wire is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge, to make
Collect derived lead for battery front side electric current.The side of the thin silver wire in the back side is flushed with silicon chip edge, and opposite side compares silicon chip edge
About 3mm is grown, to collect derived lead as cell backside electric current.Front is positioned opposite with the lead at the back side.
(13) thin silver wire is made to pass through tin cream at 300 DEG C to be combined together with localized metallic electrode, formation can be used as N-type brilliant
Silion cell front and the conductive composition body of backplate.
The foregoing is merely one embodiment of the present invention, are not all of or unique embodiment, this field are common
Technical staff is the present invention by reading description of the invention and any equivalent transformation taken technical solution of the present invention
Claim covered.
Claims (8)
1. a kind of N-type crystalline silicon double-sided solar battery structure, which is characterized in that include successively from top to down：Front metal is led
Line (8), front localized contact metal electrode (11), front surface antireflection film (1), front passivating film (2), p-type doped layer (3), N-type
Crystal silicon matrix (4), N+ areas (5), backside passivation film (6), the back side locally connect metal electrode (15) and back metal conducting wire (12)；
Front metal conducting wire (8) connect formation by front side conductive bond material (10) with front localized contact metal electrode (11)
Conductive composition body of the Hanging sectionally structure as battery front side electrode, and pass through setting and connect just with front metal conducting wire (8)
Face main gate line (9) or positive electrode lead (7) export the electric current that front is collected；
Back metal conducting wire (12) connect shape by back side conductive bonding material (14) with rear side local contact metal electrode (15)
Conductive composition body into Hanging sectionally structure as cell backside electrode, and pass through what setting was connect with back metal conducting wire (12)
Back side main gate line (13) or negative electrode lead (16) export the electric current that the back side is collected；
Front localized contact metal electrode (11) is arranged in regular pattern on the positive antireflective coating of N-type crystalline silicon piece (1), just
Face localized contact metal electrode (11) penetrates the positive antireflective coating of N-type crystalline silicon piece (1) and passivating film (2) and p-type doped layer
(3) Ohmic contact is formed；
Rear side local contact metal electrode (15) is arranged in regular pattern on the passivating film (6) at the N-type crystalline silicon piece back side, the back side
Localized contact metal electrode (15) penetrates the passivating film (6) at the N-type crystalline silicon piece back side and N+ areas (5) form Ohmic contact；
The p-type doped layer (3) contacted with front localized contact metal electrode (11) be Uniform Doped layer or selective doping layer,
The sheet resistance of even doped layer is 50~100 Ω/；In selective doping layer, shallow region sheet resistance of mixing is 50~150 Ω/, heavily doped area
Sheet resistance is 10~50 Ω/；Front localized contact metal electrode (11) is distributed within the figure of heavily doped area distribution；
The N+ areas (5) contacted with rear side local contact metal electrode (15) are Uniform Doped floor or selective doping floor, are uniformly mixed
The sheet resistance of diamicton is 20~100 Ω/；In selective doping layer, shallow region sheet resistance of mixing is 50~150 Ω/, heavily doped area's sheet resistance
Within the figure being distributed for 10~50 Ω/, the heavily doped region of rear side local contact metal electrode (15) distribution overleaf.
A kind of 2. N-type crystalline silicon double-sided solar battery structure according to claim 1, which is characterized in that regular pattern
For one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from：Straight line, line segment, camber line
Or grid line shape；Two-dimentional geometric figure is selected from：Ellipse, spindle, annular, polygon or sector.
3. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 2, which is characterized in that described one-dimensional
The line width of geometric figure is 30~200um, and length is 0.05~160mm；It is 0.25 with linear spacing two neighboring in a line
~2.5mm, two neighboring linear spacing is 0.5~3mm in same row；
The size of the two-dimentional geometric figure is 30~200um, and the spacing with figure two neighboring in a line is 0.5~2mm, together
The spacing of two neighboring figure is 0.5~3mm in one row.
4. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1, which is characterized in that it is described just
Face plain conductor (8) and back metal conducting wire (12) are copper wire, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy
Line, a diameter of 20~100um；The front side conductive bond material (10) and back side conductive bonding material (14) be tin cream,
Sn-containing alloy, conducting resinl or conductive film.
A kind of 5. N-type crystalline silicon double-sided solar battery structure according to claim 1, which is characterized in that front passivation
Film (2) is aluminum oxide film, silicon oxide film, silicon nitride film, silicon oxynitride film, thin film of titanium oxide, carborundum films, non-
One or more laminations in polycrystal silicon film are formed, and the integral thickness of front passivating film (2) is 1~50nm；
Front surface antireflection film (1) is silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum films
In one or more laminations form, antireflective coating integral thickness be 50~100nm；
Backside passivation film (6) for silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, thin film of titanium oxide,
One or more laminations in carborundum films are formed, and backside passivation film (6) integral thickness is 20~150nm.
A kind of 6. N-type crystalline silicon double-sided solar battery structure according to claim 1, which is characterized in that the two-sided electricity of N-type
The surface in pond falls into light texture as pyramid, inverted pyramid, Nano/micron porous structure using light texture is fallen into；N-type crystalline silicon piece
For n type single crystal silicon piece or N-type polycrystalline silicon piece, thickness is 100~200um.
7. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1, which is characterized in that when setting just
When face main gate line (9) and back side main gate line (13), front main grid line (9) and back side main gate line (13) respectively with front metal conducting wire
(8) it is staggered with back metal conducting wire (12), all front metal conducting wires (8) pass through front side conductive bond material (10)
It connect to form Hanging sectionally structure with front main grid line (9)；All back metal conducting wires (12) are combined by back side conduction
Material (14) connect to form Hanging sectionally structure with back side main gate line (13)；
When setting positive electrode lead (7) and negative electrode lead (16), positive electrode lead (7) and negative electrode lead (16) connect respectively
Connect all front metal conducting wires (8), all back metal conducting wires (12), and positive electrode lead (7) and negative electrode lead (16) phase
To arrangement.
8. a kind of preparation side of the N-type crystalline silicon double-sided solar battery structure in 1-7 according to claim described in any one
Method, which is characterized in that include the following steps：
(1) N-type crystalline silicon piece is subjected to surface-texturing processing；
(2) it is applied in the front of N-type crystalline silicon piece using low pressure diffusion, normal pressure diffusion, ion implanting, laser doping or impurity slurry
It applies collaboration heat-treating methods and forms p-type doped layer (3), p-type doped layer (3) is adulterated for uniformity or selective doping；
(3) the back side of N-type crystalline silicon piece using normal pressure diffusion, low pressure diffusion, ion implanting, coating phosphorus slurry cooperate be heat-treated or
Doped dielectric film collaboration heat-treating methods form N+ areas (5)；
(4) chemical cleaning is carried out to the silicon chip after doping treatment；
(5) front passivating film (2) and front surface antireflection film (1) are sequentially depositing on p-type doped layer (3) surface；On N+ areas (5)
Deposit backside passivation film (6)；
(6) using silk-screen printing, ink-jet, 3D printing, laser transfer, chemical attack collaboration gas phase in front surface antireflection film (1)
Deposition, photoinduction plating or electric plating method make the front localized contact metal electrode (11) of array distribution；
(7) it is overleaf sunk on passivating film (6) using silk-screen printing, ink-jet, 3D printing, laser transfer, chemical attack collaboration gas phase
Product, photoinduction plating or electric plating method make the rear side local contact metal electrode (15) of array distribution；
(8) drying and processing is carried out；
(9) it is heat-treated, front localized contact metal electrode (11) penetrates front surface antireflection film (1) and front passivating film (2)
Good Ohmic contact is formed with p-type doped layer (3)；Rear side local contact metal electrode (15) penetrates backside passivation film (6) and N
+ area (5) forms Ohmic contact；
(10) it is made on front localized contact metal electrode (11) and rear side local contact metal electrode (15) conductive with reference to material
Material；
(11) by front metal conducting wire (8) and back metal conducting wire (12) respectively along the row of front and back localized contact metal electrode
Direction drawing is simultaneously tightly attached on conductive bonding material；
(12) it is heat-treated, the plain conductor of front and back is made to pass through conductive bonding material and is combined with localized contact metal electrode
Together, the positive and negative electrode of N-type crystalline silicon double-sided solar battery is formed.
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