CN105702757B - A kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof - Google Patents
A kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof Download PDFInfo
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- CN105702757B CN105702757B CN201610213467.3A CN201610213467A CN105702757B CN 105702757 B CN105702757 B CN 105702757B CN 201610213467 A CN201610213467 A CN 201610213467A CN 105702757 B CN105702757 B CN 105702757B
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- crystal silicon
- electrically conducting
- electrode
- heavily doped
- conducting transparent
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 111
- 239000010703 silicon Substances 0.000 title claims abstract description 111
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 68
- 239000011248 coating agent Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000007888 film coating Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000010146 3D printing Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002905 metal composite material Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof, and described electrically conducting transparent assembly is arranged on the front and/or the back side of body silicon solar cell, including：The nesa coating being arranged on passivating film/antireflective coating, and the metal electrode on nesa coating, passivating film/antireflective coating are arranged on crystal silicon chip；The front of described crystal silicon chip or the back side form local heavily doped region according to regular pattern, described nesa coating penetrates passivating film/antireflective coating and directly contacted with local heavily doped region, and local heavily doped region and metal electrode are connected to become the electrically conducting transparent assembly of crystal silicon cell electrode by nesa coating.It is heavy doping as the front of solar cell or backing transparent electrode, partial contact zones that the electrically conducting transparent assembly, which is used with the nesa coating of silicon substrate localized contact, and good Ohmic contact is formed with silicon substrate to be advantageous to nesa coating.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of crystal silicon solar energy battery electrically conducting transparent combination
Body and preparation method thereof.
Background technology
From first piece of solar cell in 1954 since AT＆T Labs is born, crystal silicon solar energy battery has obtained extensively
General application, conversion efficiency are constantly lifted, production cost continuous decrease.At present, crystal silicon solar energy battery accounts for solar cell
More than the 80% of overall global market, the producing line conversion efficiency of crystalline silicon battery plate have broken through 20% at present, and global year is newly equipped with
Machine capacity about 50GW and speedup is obvious, constantly reduces with the degree electricity cost of thermal power generation, is expected to maintain an equal level therewith in the coming years.It is brilliant
Body silicon solar cell as a kind of clean energy resource environmental pressure etc. of restructuring the use of energy, alleviate important function increasingly
Highlight.
Crystal silicon solar energy battery wants to continue to keep competitiveness, obtains bigger development and application, it is necessary to further carries
High conversion efficiency, while reduce production cost.The smooth surface electrode of crystal silicon cell is by the way of silver paste silk-screen printing at present
Nearly hundred thin grid and some main grids are formed, the Material Cost that this process uses is expensive, and silver electrode can cause cell piece surface
5%~7% area is formed to be blocked to light, greatly reduces the conversion efficiency of cell piece.
How to reduce shading-area and keep being balanced between good electric conductivity, be crystal silicon cell skill in recent years
One emphasis of art research.Due to the progress of Size Technology and printing technology, the thin grid width of smooth surface electrode of crystal silicon cell
Constantly reduce, predicted according to SEMI, the width to the thin grid of the year two thousand twenty will be reduced to less than 35 microns, while main grid uses more main grids
And without main grid.During this grid line refinement technology, the shading-area of electrode has declined, and electric conductivity has been lifted, simultaneously
Obtain the lifting of efficiency and the decline of cost.But with the continuous reduction of grid line width, technology difficulty prepared by electrode is continuous
Increase, further improve efficiency, reduce the reduced space of production cost.
Nesa coating has good translucency and electric conductivity simultaneously, is the ideal material of electrode of solar battery, has
The light that prestige thoroughly solves metal electrode blocks and Cost Problems.Although nesa coating is in film and heterojunction solar battery
Application it is highly developed, but using rare in the crystal silicon solar energy battery of the market mainstream, its main cause be with
The matching of existing process is poor, contact resistance is higher etc..So nesa coating is promoted as early as possible in main flow crystal silicon solar
Application in battery is one of focus of future studies.
The content of the invention
, should it is an object of the invention to provide a kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof
Electrically conducting transparent assembly uses and front or backing transparent of the nesa coating of silicon substrate localized contact as solar cell
Electrode, partial contact zones are heavy doping, and good Ohmic contact is formed with silicon substrate to be advantageous to nesa coating.
To achieve the above object, the present invention uses following technical scheme：
Described electrically conducting transparent assembly is arranged on the front and/or the back side of body silicon solar cell, including：It is arranged on blunt
Change the nesa coating on film/antireflective coating, and the metal electrode being arranged on nesa coating, passivating film/antireflective coating are set
Put on crystal silicon chip；The front of described crystal silicon chip or the back side are provided with the local heavy doping arranged according to regular pattern
Area, described local heavily doped region directly contact with the nesa coating of correspondence position, and nesa coating will be according to regular pattern
Metal electrode on the local heavily doped region and nesa coating of arrangement is connected to become the electrically conducting transparent group of crystal silicon cell electrode
It is fit.
Described nesa coating is ito thin film, AZO films, GZO films, FTO films, IWO films and graphene film
In one or more laminations form.
Local heavily doped region is arranged using array pattern, and its pattern is one-dimensional, two-dimentional geometric figure or one-dimensional several with two dimension
The combination of what figure；One-dimensional geometric figure is selected from：Line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from：Circular,
Ellipse, spindle, annular, polygon, polygonal or sector.
The line width of the one-dimensional geometric figure is 30~100um, and length is 0.05~1.5mm；With two neighboring in a line
Linear spacing is 0.5~2mm, and two neighboring linear spacing is 0.5~2mm in same row.
The two-dimentional geometric figure X, the length of Y-direction are 30~200um, two neighboring centre of figure away from for 0.8~
2mm。
Metal electrode on the nesa coating is silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or gold
Belong to combination electrode；The arrangement pattern of metal electrode is the combination of one group of parallel segment or multigroup parallel segment, and the width of line segment is
20~2000um, quantity are 5~100, and line length is that the distance between 2~156mm, adjacent segments is 0.5~50mm.
A kind of preparation method of crystal silicon solar energy battery electrically conducting transparent assembly, comprises the following steps：
1) method by crystal silicon chip using chemical liquid burn into plasma etching, nano metal catalysis or laser ablation
Carry out surface-texturing processing；
2) processing is doped to crystal silicon chip to form PN junction；
3) local heavily doped region is formed in the front of crystal silicon chip or the back side；The method for forming local heavily doped region is：
A) by regular figure using the method for printing, spraying or 3D printing by dopant coated in front side of silicon wafer or the back side
On antireflective coating/passivating film, then the dopant progress PULSE HEATING using laser to coating, foreign atom is penetrated antireflective
Film/passivating film diffuses to form local heavily doped region to silicon substrate；Or
B) in the silicon chip surface Jing Guo thermal diffusion by regular figure spray mask, then it is clear using the method progress of wet etching
Wash, local heavy doping is formed in the region of spray mask；
4) for the local heavy doping formed by b) method, need to then prepare antireflective coating/passivating film, then using laser or
The method of chemical attack removes antireflective coating/passivating film on local heavy doping；
5) it is transparent using sputtering, vapour deposition, 3D printing, printing, spraying coating process making on passivating film/antireflective coating surface
Conducting film, the thickness control of nesa coating is in 50~500nm；Metal electrode, metal electrode are made on nesa coating again
Arrangement pattern be one group of parallel segment or multigroup parallel segment combination, the width of line segment be 20~2000um, quantity for 5~
100, line length is that the distance between 2~156mm, adjacent segments is 0.5~50mm.Nesa coating at heavily doped region with
Silicon substrate is directly contacted, and local heavily doped region and metal electrode are connected to become into conductive composition body.
As a further improvement on the present invention, local heavily doped region is that N-type or p-type are heavily doped, and the sheet resistance of heavy doping is 5~50
Ω/□。
As a further improvement on the present invention, described crystal silicon chip is the p-type either monocrystalline silicon piece of N-type, p-type or N
The polysilicon chip of type.
As a further improvement on the present invention, described electrically conducting transparent assembly is formed at the table of p-type or N-type silicon substrate
Face, or it is formed at p-type or N-type emitter surface.
As a further improvement on the present invention, antireflective coating be silicon nitride film, silicon oxide film, silicon oxynitride film,
One or more laminations in carborundum films and thin film of titanium oxide are formed, and thickness is 50~100nm；Passivating film is that silicon nitride is thin
One or more laminations in film, silicon oxide film, silicon oxynitride film, aluminum oxide film and amorphous silicon membrane are formed, thickness
For 5~50nm.
Compared with prior art, the present invention has technique effect beneficial below：
The present invention makes making electrode of solar battery be electrically conducting transparent assembly, using transparent with silicon substrate localized contact
Conducting film is heavy doping as the front of solar cell or backing transparent electrode, partial contact zones, to be advantageous to transparent lead
Electrolemma forms good Ohmic contact with silicon substrate, and by being used for conducting electric current in electrically conducting transparent film production and being easy to make electricity
Pond group metal electrode.The light-receiving area of cell piece is added 4%~7%, maintain the good electric conductivity of electrode, make crystalline substance
The conversion efficiency of body silion cell is obviously improved.In addition, the usage amount of metal paste is greatly decreased so that production cost significantly drops
It is low, and produce and be easily achieved, control.Power loss caused by metal electrode light blocks is avoided, balances crystal silicon well
Electrode light blocks the double-barreled question between electric conductivity, lifts the conversion efficiency of battery, production cost reduces.
The preparation method of the present invention molds doping, secondary diffusion, ion implanting, mask etching, dopant painting by laser
The methods of applying forms local heavy doping in the front of crystal silicon chip or the back side by specific figure, in the silicon chip table of local heavy doping
Face makes nesa coating, then makes metal electrode on the surface of nesa coating.Nesa coating is direct with heavily doped region
Contact, and heavily doped region and metal electrode are connected to become one can be as the electrically conducting transparent assembly of crystal silicon cell electrode.
Preparation method is simple, and mass, procedure can be achieved.
Brief description of the drawings
Fig. 1 is the crystal silicon cell diagrammatic cross-section based on front transparent conducting film localized contact electrode；
Fig. 2 is the crystal silicon cell diagrammatic cross-section based on backing transparent conducting film localized contact electrode；
Fig. 3 is point-like part heavy doping distribution schematic diagram；
Fig. 4 is line segment shape part heavy doping distribution schematic diagram；
Wherein, 1, nesa coating, 2, passivating film/antireflective coating, 3, local heavily doped region, 4, crystal silicon chip, 5, metal
Electrode.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, the invention provides a kind of crystal silicon solar energy battery nesa coating localized contact structure
And preparation method thereof, by laser mold doping, secondary diffusion, ion implanting, mask etching, dopant coating the methods of in crystalline substance
The front of body silicon chip 4 or the back side are by specific figure (can be grid line shape, spotted array, line segment shape array and other shapes) shape
Into local heavy doping 3, nesa coating 1 is made in the silicon chip surface of local heavy doping, then make on the surface of nesa coating 1
Metal electrode 5.Nesa coating 1 is directly contacted with heavily doped region 3, and heavily doped region 3 and metal electrode 5 are connected to become into one
Can be as the electrically conducting transparent assembly of crystal silicon cell electrode.The electrode that the method for the invention is formed can substitute traditional sun
The thin grid of metal and main grid of energy battery electrode, or substitute thin grid line in the case where optimizing main grid.
The method that above-mentioned crystal silicon solar energy battery nesa coating localized contact is formed comprises the following steps：
1) crystal silicon chip is subjected to surface-texturing processing, silicon chip can be the monocrystalline silicon piece and polysilicon of p-type and N-type
Piece, texture are handled the methods of can using chemical liquid burn into plasma etching, nano metal catalysis, laser ablation.
2) processing is doped to silicon chip to form PN junction, the method for doping can use normal pressure diffusion, low pressure diffusion, from
Sub- injection, impurity slurry coating etc..
3) carry out local heavy doping on PN junction by specific figure, heavy doping figure can be grid line shape, spotted array,
Line segment shape array and other figures.As shown in Figure 3 and Figure 4, the diameter of dot pattern is between 50~200um, between points
Spacing between 0.8~2mm；The line width of line segment shape pattern is between 40~100um, and length is between 0.05~1.5mm, line
Section is 0.5~2mm in the spacing of X, Y-direction.Forming the method for local heavy doping can use secondary thermal diffusion, laser die sinking to mix
Miscellaneous, local ion implanting, mask anti-carve erosion, the coating of dopant local etc., and correspondingly, local heavy doping can form PN junction
Process in complete, can also complete, can also be completed simultaneously with laser doping in the process of etch cleaner.
4) nesa coating is made in front or the back side, nesa coating can be that ITO (indium tin oxide), AZO (mix aluminium
Zinc oxide), FTO (fluorine doped tin oxide), IWO (tungsten-doped indium oxide), graphene, GZO (gallium-doped zinc oxide) etc., the method for making can
So that using sputtering, printing, spraying, vapour deposition etc., the thickness control of nesa coating is in 50~500nm.Again in electrically conducting transparent
Metal electrode is made on film, metal electrode pattern is the combination of one group of parallel segment or multigroup parallel segment, and the width of line segment is
20~2000um, quantity are 5~100, and line length is that the distance between 2~156mm, adjacent segments is 0.5~50mm.It is transparent to lead
Electrolemma is directly contacted at heavily doped region with silicon substrate, and local heavily doped region and metal electrode are connected to become into conductive composition
Body.
With reference to specific embodiment, the preparation method of the present invention is described in detail：
Embodiment 1：
(1) using the method for diffusion, form 80 Ω/ 's in the p type single crystal silicon piece front by surface-texturing processing
Uniform diffusion layer；
(2) phosphorosilicate glass is removed using wet etching and the back of the body is tied；
(3) in the front of silicon chip successively deposition 5nm or so silica and 80nm or so silicon nitride；
(4) phosphorous dopant is printed by special pattern in front, printed pattern uses spotted array, the diameter of a single point
For 50um, spacing between points is 0.8mm；
(5) PULSE HEATING is carried out to dopant by the special pattern described in step (4) using laser, penetrates phosphorus atoms
Antireflective coating and passivating film are spread to silicon substrate, and the local heavily doped region of spotted array is formed in the front of silicon chip；
(6) 100nm AZO nesa coatings are prepared in front using sputtering method, then silk screen is used on nesa coating
The method of printing makes silver electrode, and silver electrode pattern is made up of the grid line of 1 group of equidistant parallel, and grid line quantity is 20, and grid line is wide
Spend for 20um.AZO nesa coatings directly contact with the silicon substrate in heavily doped area, and the local heavily doped region that spotted array is distributed
Domain and silver grating line electrode are connected to become one can be as the conductive composition body of crystal silicon battery front electrode.
Embodiment 2：
(1) the phosphorous slurry of specific graphic printing is pressed in the p-type polysilicon piece front by surface-texturing processing, printed
Figure is spotted array, and a diameter of 200um of a single point, spacing between points is 2.0mm；
(2) low pressure diffusion is carried out in diffusion furnace, heavy doping is formed in the region of printing phosphorus slurry, in no printing phosphorus slurry
Region forms and is lightly doped；
(3) phosphorosilicate glass is removed using wet etching and the back of the body is tied；
(4) in the front deposition 80nm of silicon chip or so silicon oxynitride；
(5) antireflective coating in the heavily doped region in front is removed by the figure described in step (1) using laser；
(6) 80nm graphene transparent conductive film is prepared in front using chemical vapor deposition, then lead graphene is transparent
Silver electrode is made on electrolemma, silver electrode is made up of the main gate line of the thin grid line and one group of equidistant parallel of one group of equidistant parallel, thin grid
Line intersects vertically with main gate line.Thin grid line is 30, cross-sectional width 30um；Main grid is 4, cross-sectional width 1mm.Graphene
Nesa coating directly contacts with the silicon substrate in heavily doped area, and the local heavily doped region that spotted array is distributed and silver-colored gate-shaped electrode
Domain is connected to become one can be as the conductive composition body of crystal silicon battery front electrode.
Embodiment 3：
(1) method for using ion implanting, distinguish in the n type single crystal silicon piece front by surface-texturing processing with the back side
Form 90 Ω/ and 50 Ω/ uniform diffusion layer；
(2) front and the back side of Chemical cleaning silicon chip；
(3) in front side of silicon wafer successively deposition 25nm or so aluminum oxide and 80nm or so silicon nitride；
(4) in silicon chip back side successively deposition 25nm or so silica and 80nm or so silicon nitride；
(5) boron doped agent being sprayed respectively with the back side in front and containing phosphorus dopant, spraying figure is spotted array, single
A diameter of 100um of point, spacing between points is 1.5mm；
(6) PULSE HEATING is carried out to dopant by the figure described in step (5) using laser, make positive boron atom with
The phosphorus atoms at the back side penetrate antireflective coating and passivating film and spread to silicon substrate, and spotted array is formed with the back side in the front of silicon chip
Local heavily doped region；
(7) 150nm ITO nesa coating is prepared at front and the back side using sputtering method respectively, the nesa coating with
The silicon substrate in heavily doped area directly contacts, and using spotted array be distributed local heavily doped region be connected to become one can be as crystal silicon
The conductive composition body of battery front side and backplate.
Embodiment 4：
(1) using the method for diffusion, form 40 Ω/ 's in the p type single crystal silicon piece front by surface-texturing processing
Uniform diffusion layer；
(2) line segment shape array is used by specific figure spray mask, mask pattern on diffusion layer, the length of line segment is
50um, width 40um, the spacing between line segment and line segment are 0.5mm；
(3) remove phosphorosilicate glass, mask and the back of the body using wet etching to tie, heavy doping is formed in the region for being sprayed with mask,
The region formation for not spraying mask is lightly doped；
(4) in front deposition 80nm or so silica；
(5) method corroded using mask and chemical agent removes heavily doped region by the figure described in step (2)
Antireflective coating；
(6) 200nm IWO nesa coatings are prepared in front using sputtering method, then ink-jet is used on nesa coating
Method prepare silver electrode, silver electrode is made up of the 10 groups of equidistant parallel being parallel to each other grid lines, and every group of grid line is 30, and section is wide
Spend for 20um, the spacing between the parallel grid line of two adjacent groups is 2mm.IWO nesa coatings and the silicon substrate in heavily doped area directly connect
Touch, and local heavily doped region and the silver grating line electrode of line segment shape array distribution is connected to become one can be as crystal silicon battery just
The conductive composition body of face electrode.
Embodiment 5：
(1) using the method for diffusion, form 70 Ω/ 's in the N-type polycrystalline silicon piece front by surface-texturing processing
Uniform diffusion layer；
(2) Pyrex are removed using wet etching and the back of the body is tied；
(3) in the front of silicon chip successively deposition 20nm or so aluminum oxide and 70nm or so silicon nitride；
(4) dopant in front by special pattern spraying boracic, spraying figure use line segment shape array, the length of line segment
For 1.5mm, width 100um, the spacing between line segment and line segment is 2mm；
(5) PULSE HEATING is carried out to dopant by the special pattern described in step (4) using laser, penetrates boron atom
Antireflective coating and passivating film are spread to silicon substrate, and the local heavily doped region of line segment shape array is formed in the front of silicon chip；
(6) 200nm FTO nesa coatings are prepared in front using sputtering method, then silver electricity is made on nesa coating
Pole, silver electrode are made up of the main gate line of the thin grid line and one group of equidistant parallel of one group of equidistant parallel, and thin grid line is vertical with main gate line
It is intersecting.Thin grid line is 10, cross-sectional width 40um；Main grid is 5, cross-sectional width 1mm.FTO nesa coatings with it is heavily doped
The silicon substrate in area directly contacts, and the local heavily doped region of line segment shape array distribution and silver electrode are connected to become into one can make
For the conductive composition body of crystal silicon battery front electrode.
Embodiment 6：
(1) using the method for diffusion, form 40 Ω/ 's in the p-type polysilicon piece front by surface-texturing processing
Uniform diffusion layer；
(2) by specific figure spray mask on diffusion layer, mask pattern is grid line shape, and thin grid are by 100 width
30um or so equidistant sets of parallel is into, main grid by equidistant sets of parallel that 5 width are 1mm into thin grid hang down with main grid
It is straight intersecting.
(3) remove phosphorosilicate glass, mask and the back of the body using wet etching to tie, heavy doping is formed in the region for being sprayed with mask,
The region formation for not spraying mask is lightly doped；
(4) in front deposition 80nm or so silicon nitride；
(5) method corroded using mask and chemical agent removes heavily doped region by the figure described in step (2)
Antireflective coating；
(6) 200nm GZO nesa coatings are deposited in front using sputtering method, then silk screen is used on nesa coating
The method of printing makes silver electrode, and silver electrode pattern is made up of the grid line of 1 group of equidistant parallel, and grid line quantity is 40, and grid line is wide
Spend for 30um.GZO nesa coatings are directly contacted with the silicon substrate in heavily doped area, and grid line shape heavily doped region and silver electrode are connected
Being connected into can be as the conductive composition body of crystal silicon battery front electrode for one.
Embodiment 7：
(1) using the method for diffusion, form 40 Ω/ 's in the p-type polysilicon piece front by surface-texturing processing
Uniform diffusion layer；
(2) by specific figure spray mask on diffusion layer, mask pattern is grid line shape, and thin grid are 60um by 80 width
The equidistant sets of parallel of left and right is into, main grid by equidistant sets of parallel that 3 width are 1.5mm into thin grid are vertical with main grid
It is intersecting.
(3) remove phosphorosilicate glass, mask and the back of the body using wet etching to tie, heavy doping is formed in the region for being sprayed with mask,
The region formation for not spraying mask is lightly doped；
(4) in front deposition 80nm or so silicon nitride；
(5) antireflective coating of heavily doped region is removed by the figure described in step (2) using laser；
(8) 100nm AZO nesa coatings, the nesa coating and the silicon in heavily doped area are deposited in front using sputtering method
Matrix directly contacts, and the local heavily doped region of grid line shape is connected to become one can leading as crystal silicon battery front electrode
Electric assembly.
A kind of crystal silicon solar energy battery nesa coating localized contact structure of the present invention, using with silicon substrate localized contact
Nesa coating as solar cell front or backing transparent electrode, partial contact zones be heavy doping, to be advantageous to
Nesa coating forms good Ohmic contact with silicon substrate.The present invention make making electrode of solar battery metal (silver, copper,
Aluminium, nickel etc.) usage amount is greatly reduced, it might even be possible to completely without using metal, avoid power caused by metal electrode light blocks
Loss, crystal silicon electrode light is balanced well and blocks double-barreled question between electric conductivity, the conversion efficiency of battery lift, give birth to
Producing cost reduces.
The several embodiments of the present invention are the foregoing is only, is not all of or unique embodiment, this area is common
Technical staff is the present invention by reading description of the invention any equivalent conversion for taking technical solution of the present invention
Claim covered.
Claims (10)
1. a kind of crystal silicon solar energy battery electrically conducting transparent assembly, it is characterised in that described electrically conducting transparent assembly is set
At the front of body silicon solar cell and/or the back side, including：The nesa coating being arranged on passivating film/antireflective coating (2)
(1) and the metal electrode (5) that is arranged on nesa coating (1), passivating film/antireflective coating (2) are arranged on crystal silicon chip (4)
On；The front of described crystal silicon chip (4) or the back side are provided with the local heavily doped region (3) arranged according to regular pattern, described
The foreign atom of local heavily doped region (3) penetrate antireflective coating/passivating film and the nesa coating (1) of correspondence position directly connects
Touch, local heavily doped region (3) and metal electrode (5) are connected to become the transparent of crystal silicon cell electrode and led by nesa coating (1)
Electric assembly.
2. a kind of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 1, it is characterised in that described
Nesa coating (1) be ito thin film, AZO films, GZO films, FTO films, IWO films and one kind in graphene film or
A variety of laminations are formed；The thickness of nesa coating (1) is 50~500nm.
A kind of 3. crystal silicon solar energy battery electrically conducting transparent assembly according to claim 1, it is characterised in that local weight
Doped region (3) is arranged using array pattern, and its pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure group
Close；One-dimensional geometric figure is selected from：Line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from：Circular, ellipse, spin
Capitate, annular, polygon, polygonal or sector.
4. a kind of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 3, it is characterised in that described one
The line width for tieing up geometric figure is 30~100um, and length is 0.05~1.5mm；It is 0.5 with two neighboring linear spacing in a line
~2mm, two neighboring linear spacing is 0.5~2mm in same row.
5. a kind of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 3, it is characterised in that described two
The size for tieing up geometric figure is 30~200um, and two neighboring centre of figure is away from for 0.8~2mm.
A kind of 6. crystal silicon solar energy battery electrically conducting transparent assembly according to claim 1, it is characterised in that metal electrode
(5) it is silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode；The arrangement pattern of metal electrode (5)
For the combination of one group of parallel segment or multigroup parallel segment, the width of line segment is 20~2000um, and quantity is 5~100, line length
For 2~156mm, the distance between adjacent segments are 0.5~50mm.
7. a kind of preparation method of crystal silicon solar energy battery electrically conducting transparent assembly described in claim 1 to 6 any one,
It is characterised in that it includes following steps：
1) crystal silicon chip (4) is entered using the method for chemical liquid burn into plasma etching, nano metal catalysis or laser ablation
The processing of row surface-texturing；
2) processing is doped to crystal silicon chip (4) to form PN junction；
3) local heavily doped region (3) is formed in the front of crystal silicon chip (4) or the back side；The method for forming local heavily doped region (3)
For：
After first preparing antireflective coating/passivating film (2), by regular figure using the method for printing, spraying or 3D printing by dopant
On antireflective coating/passivating film (2) coated in crystal silicon chip (4) front or the back side, then using laser the dopant of coating is entered
Horizontal pulse is heated, and foreign atom is penetrated antireflective coating/passivating film and is diffuseed to form local heavily doped region (3) to silicon substrate；
4) it is transparent using sputtering, vapour deposition, 3D printing, printing, spraying coating process making on passivating film/antireflective coating (2) surface
Conducting film (1), the thickness control of nesa coating (1) is in 50~500nm；Again metal electrode is made on nesa coating (1)
(5)；Nesa coating (1) directly contacts at heavily doped region (3) place with silicon substrate, and by local heavily doped region (3) and metal
Electrode (5) is connected to become conductive composition body.
8. a kind of preparation method of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 7, its feature
It is, local heavily doped region (3) is that N-type or p-type are heavily doped, and the sheet resistance of heavy doping is 5~50 Ω/；Described crystal silicon chip (4)
For the polysilicon chip of the p-type either monocrystalline silicon piece of N-type, p-type or N-type.
9. a kind of preparation method of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 7, its feature
It is, described electrically conducting transparent assembly is formed at the surface of p-type or N-type silicon substrate, or is formed at p-type or N-type emitter stage table
Face.
10. a kind of preparation method of crystal silicon solar energy battery electrically conducting transparent assembly according to claim 7, its feature
It is, antireflective coating is in silicon nitride film, silicon oxide film, silicon oxynitride film, carborundum films and thin film of titanium oxide
One or more laminations are formed, and thickness is 50~100nm；Passivating film is that silicon nitride film, silicon oxide film, silicon oxynitride are thin
One or more laminations in film, aluminum oxide film and amorphous silicon membrane are formed, and thickness is 5~50nm.
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| CN110112229A (en) * | 2019-04-29 | 2019-08-09 | 国家电投集团西安太阳能电力有限公司 | A kind of solar battery without thin grid |
| CN110931603A (en) * | 2019-12-11 | 2020-03-27 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method thereof |
| CN113437161A (en) * | 2021-06-24 | 2021-09-24 | 韩华新能源（启东）有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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