CN104681665A - Preparation method of novel back-passivation solar cell - Google Patents
Preparation method of novel back-passivation solar cell Download PDFInfo
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- CN104681665A CN104681665A CN201510065084.1A CN201510065084A CN104681665A CN 104681665 A CN104681665 A CN 104681665A CN 201510065084 A CN201510065084 A CN 201510065084A CN 104681665 A CN104681665 A CN 104681665A
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- preparation
- mask layer
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- back surface
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- 238000002161 passivation Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000005360 phosphosilicate glass Substances 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a novel back-passivation solar cell. The preparation method comprises a cleaning and texturing step, a diffusion and pn junction making step, an etching and phosphosilicate glass (PSG) removing step, a back surface polishing step, a passivation film and protective film depositing step, a silk-screen printing step and a sintering step; after the step of etching and PSG removing and the step of back surface polishing, a mask layer is arranged on a back surface, and then the step of passivation film and protective film depositing is carried out, wherein the mask layer is in the combined shape of a back electrode and a back electric field; after the step of passivation film and protective film depositing, the mask layer is taken away; a step of opening the films is avoided. The preparation method disclosed by the invention simplifies the production processing steps and reduces production cost; by virtue of the mode of silk-screen printing, the preparation method is conducive to the large-scale industrialization.
Description
Technical field
The present invention relates to a kind of preparation method of solar cell, be specifically related to a kind of preparation method of Novel back passivation solar cell.
Background technology
Along with the sheet of silicon chip develops, require higher cell backside passivation effect.Because silicon wafer thickness is thinning, the diffusion length of minority carrier be may be close to or be greater than the thickness of silicon chip, part minority carrier will be diffused into cell backside and produce compound, if do not take effective means to reduce this part of recombination losses, this will bring adverse effect to battery efficiency.The crystal-silicon solar cell of passivating back has both the advantage of optics and electricity, can improve the efficiency of the solar cell of industrialization further, is the emphasis of next step research and development.
PERC (passivated emitter rear contact) solar cell prepared by University of New South Wales (UNSW), p type single crystal silicon efficiency is up to 23.0%.Its main feature is passivation on double surfaces, and namely the front of battery and the back side are all coated with passivation layer.For back surface, replace the whole back aluminium alloy contact of PESC (passivated emitter solar cell) battery by back point contact.At present, preparation for this kind of battery mainly contains two kinds of methods, the first first overleaf passivation layer carries out local to open film process, to form local contact zone, then silk screen printing aluminium paste is at whole cell backside, thus in sintering, forming local aluminium back surface field, this method needs independent backside passivation layer local to open membrane technology; The second is the certain thickness aluminium film of evaporation on passivation layer first overleaf, then utilize laser action in the localized area of cell backside, thus realize the contact of back side local and become local aluminium back surface field with type, this method not only needs separately to put filming equipment evaporation to form the aluminium film of aluminium back surface field, and needs laser action at silicon chip back surface.Above-mentioned two kinds method processing step is loaded down with trivial details, the process time is long, cost is high.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of preparation method of Novel back passivation solar cell, simplify production craft step, reduce production cost, and screen printing mode is more conducive to large-scale industrialization.
The technical scheme that technical solution problem of the present invention adopts is: a kind of preparation method of Novel back passivation solar cell, comprise cleaning and texturing step, diffusion step, etch and remove PSG step, back surface polishing step, passivating film and diaphragm deposition step, screen printing step and sintering step, it is characterized in that: complete described etching and after removing PSG step and back surface polishing step, one deck mask layer is placed at back surface, then passivating film and diaphragm deposition step is carried out, the shape of described mask layer is the shape of back electrode and the combination of back of the body electric field, after passivating film and diaphragm deposition step, mask layer is taken away, eliminate out film step.
Preferred as a kind, described mask layer is segmented corresponding to the shape of back electrode, and its position and size are mated with front electrode main grid.
Preferred as a kind, described mask layer is linear or circular point shape corresponding to the shape of back of the body electric field, and described rectilinear live width is 30 ~ 200 μm, and distance between centers of tracks is 0.5 ~ 4.0mm, and the radius of described circular point shape is 50 ~ 1000 μm, and dot spacing is 1 ~ 5mm.
The invention has the beneficial effects as follows: before deposition backside passivation film and diaphragm; the mask material with certain figure is placed at cell backside; make to only have partial deactivation film and diaphragm to be deposited on the back side; the part not depositing passivating film then becomes contact window; after taking out mask material, in follow-up silk screen printing back pastes, form good ohmic contact and back of the body electric field; after plating steps, mask layer is taken away, eliminate out film step.Simplify production craft step, reduce production cost, and screen printing mode is more conducive to large-scale industrialization.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention 1 mask shape schematic diagram, and wherein label 1 is back electrode part (not depositing passivating film and diaphragm part); Label 2 is the back of the body electric part (not depositing passivating film and diaphragm part) of point-like.
Embodiment
Embodiment 1: the preparation method of the first Novel back passivation solar cell; comprise cleaning and texturing step, diffusion step, etching remove PSG step, back surface polishing step, passivating film and diaphragm deposition step, screen printing step and sintering step; complete described etching and after removing PSG step and back surface polishing step; one deck mask layer is placed at back surface; then carry out passivating film and diaphragm deposition step, the shape of described mask layer is the shape that back electrode 1 and back of the body electric field 2 combine.Described mask layer is segmented corresponding to the shape of back electrode 1, and its grid line width is 1.4mm, and grating spacing is 52mm, and described mask layer is circular point shape corresponding to the shape of back of the body electric field 2, and the radius of described circular point shape is 1000 μm, and dot spacing is 4mm.Adopt PECVD method deposit thickness to be the SiNx film of 80nm, to take out after mask silk screen printing back electrode slurry, back of the body electric field slurry and front side silver paste slurry again, dry and sinter.
Embodiment 2: the preparation method of the second Novel back passivation solar cell, the radius of described circular point shape is 50 μm, and dot spacing is 1mm.Other is identical with embodiment 1.
Embodiment 3: the preparation method of the third Novel back passivation solar cell, the radius of described circular point shape is 600 μm, and dot spacing is 3mm.Other is identical with embodiment 1.
The preparation method of embodiment 4: the four kinds of Novel back passivation solar cells; comprise cleaning and texturing step, diffusion step, etching remove PSG step, back surface polishing step, passivating film and diaphragm deposition step, screen printing step and sintering step; complete described etching and after removing PSG step and back surface polishing step; one deck mask layer is placed at back surface; then carry out passivating film and diaphragm deposition step, the shape of described mask layer is the shape that back electrode 1 and back of the body electric field 2 combine.Described mask layer is segmented corresponding to the shape of back electrode 1, and its grid line width is 1.4mm, and grating spacing is 52mm, and described mask layer is linear corresponding to the shape of back of the body electric field 2, and described rectilinear live width is 80 μm, and distance between centers of tracks is 1.5mm.The Si2O2 passivating film that using plasma chemical vapour deposition (CVD) (PECVD) method deposition 20nm is thick, employing PECVD method deposit thickness is the SiNx film of 70nm, to take out after mask silk screen printing back electrode slurry, back of the body electric field slurry and front side silver paste slurry again, dry and sinter.
The preparation method of embodiment 5: the five kinds of Novel back passivation solar cells, described rectilinear live width is 30 μm, and distance between centers of tracks is 0.5mm.Other is identical with embodiment 4.
The preparation method of embodiment 6: the six kinds of Novel back passivation solar cells, the rectilinear live width of described line is 200 μm, and distance between centers of tracks is 4.0mm.Other is identical with embodiment 4.
Claims (3)
1. the preparation method of a Novel back passivation solar cell, comprise cleaning and texturing step, diffusion step, etching remove PSG step, back surface polishing step, passivating film and diaphragm deposition step, screen printing step and sintering step, it is characterized in that: complete described etching and after removing PSG step and back surface polishing step, one deck mask layer is placed at back surface, then carry out passivating film and diaphragm deposition step, the shape of described mask layer is the shape that back electrode (1) and back of the body electric field (2) combine; After passivating film and diaphragm deposition step, mask layer is taken away, eliminate out film step.
2. the preparation method of Novel back passivation solar cell as claimed in claim 1, is characterized in that: described mask layer is segmented corresponding to the shape of back electrode (1), and its position and size are mated with front electrode main grid.
3. the preparation method of Novel back passivation solar cell as claimed in claim 1, it is characterized in that: on described mask layer corresponding to the back of the body electric field (2) shape be linear or circular point shape, described rectilinear live width is 30 ~ 200 μm, distance between centers of tracks is 0.5 ~ 4.0mm, the radius of described circular point shape is 50 ~ 1000 μm, and dot spacing is 1 ~ 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510065084.1A CN104681665A (en) | 2015-02-09 | 2015-02-09 | Preparation method of novel back-passivation solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510065084.1A CN104681665A (en) | 2015-02-09 | 2015-02-09 | Preparation method of novel back-passivation solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN104681665A true CN104681665A (en) | 2015-06-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510065084.1A Pending CN104681665A (en) | 2015-02-09 | 2015-02-09 | Preparation method of novel back-passivation solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405901A (en) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | Local contact back passivation solar cell |
| CN105470347A (en) * | 2015-12-22 | 2016-04-06 | 浙江晶科能源有限公司 | PERC (PowerEdge RAID Controller) battery manufacturing method |
| CN107516683A (en) * | 2017-08-04 | 2017-12-26 | 张家港协鑫集成科技有限公司 | Rear surface of solar cell partial metallic contact method and cell manufacturing method |
| CN115020538A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | P-type IBC single crystal solar cell and preparation method thereof |
-
2015
- 2015-02-09 CN CN201510065084.1A patent/CN104681665A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405901A (en) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | Local contact back passivation solar cell |
| CN105470347A (en) * | 2015-12-22 | 2016-04-06 | 浙江晶科能源有限公司 | PERC (PowerEdge RAID Controller) battery manufacturing method |
| CN107516683A (en) * | 2017-08-04 | 2017-12-26 | 张家港协鑫集成科技有限公司 | Rear surface of solar cell partial metallic contact method and cell manufacturing method |
| CN115020538A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | P-type IBC single crystal solar cell and preparation method thereof |
| CN115020538B (en) * | 2022-04-30 | 2024-04-30 | 常州时创能源股份有限公司 | P-type IBC single crystal solar cell and preparation method thereof |
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Application publication date: 20150603 |
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