CN108198903A - A kind of preparation method of the MWT solar cells of back side coating film processing - Google Patents
A kind of preparation method of the MWT solar cells of back side coating film processing Download PDFInfo
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- CN108198903A CN108198903A CN201711453529.9A CN201711453529A CN108198903A CN 108198903 A CN108198903 A CN 108198903A CN 201711453529 A CN201711453529 A CN 201711453529A CN 108198903 A CN108198903 A CN 108198903A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 title claims abstract description 25
- 239000011248 coating agent Substances 0.000 title claims abstract description 18
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 4
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 3
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 238000011049 filling Methods 0.000 claims abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004080 punching Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 42
- 238000005516 engineering process Methods 0.000 description 11
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000012634 fragment Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation methods of the MWT solar cells of back side coating film processing, which is characterized in that including：Substrate is prepared, the substrate is has completed PN junction diffusion technique, front deposition has antireflective coating, the back side to be formed with passivation layer and protective film, completes lbg, and prepared the silicon solar cell substrate of back side anode, electric field, front electrode；Punching：The hole that the electric current that front electrode collects is led to substrate back for filling paste is formed on substrate；Prepare cathode：With conductive paste hole and the cathode of backplate is made, is connected to form current path with front electrode；Drying：Baking and curing conducting resinl.Preparation method of the present invention reduces cost, simplifies processing procedure, improves product quality.
Description
Technical field
The present invention relates to the MWT sun that silicon solar cell technology field more particularly to a kind of back side coating film are handled
The preparation method of energy battery.
Background technology
Metal piercing winding silicon solar cell (MWT) is because its is efficient, and shading-area is small and better appearance characteristics
It receives more and more attention.MWT silicon solar cells are to pass through battery transfer by the energy that laser drill collects front
To cell backside, achieve the purpose that improve transfer efficiency to reduce shading-area.Patent CN201410016190.6 is provided
A kind of low cost preparation method of MWT, this method only increase two procedures on the production process of conventional crystalline silicon battery, i.e.,：
The process to insulate at hole together with increasing by one of laser boring process before making herbs into wool process and increasing after the diffusion or after plated film.Due to
This method is simple for process, increases the technique that equipment is few, becomes at present the unique volume production of MWT battery production in the industry.
Localized contact back of the body passivation (PERC) solar cell is a kind of nearest 2 years high-efficiency solar electricity out newly developed
Pool technology has obtained extensive concern in the industry.Such as patent CN201410484916.9, to provide a kind of silk-screen printing nano oxidized
Aluminium or silica prepare the technology of passivation layer；Patent CN201710054179.2 provides a kind of monocrystalline PERC electricity of low recombination rate
Pool process scheme；Patent CN201710125141.X provides a kind of process program of p-type PERC double-sided solar batteries.PERC
The core of battery process technology is shady face aluminium oxide or the silicon oxide film covering in silicon chip, plays passivated surface and improves length
Wave responds, so as to improve the transfer efficiency of battery.Meanwhile in order to avoid the passivation of the aluminum metal destruction passivation layer in sintering process
Efficiency generally on aluminium oxide or silicon oxide film covers one layer of silicon nitride film, plays a protective role again.Due to aluminium oxide or
Silica is non-conductive, needs to its local openings to form Ohmic contact, collected current.Existing PERC conventional batteries as a result,
Preparation process mainly include following steps：Making herbs into wool, diffusion, back of the body polishing, etching, backside deposition aluminium oxide or silica are thin
Film, backside deposition silicon nitride protective film, front deposited silicon nitride antireflective film, back side local openings, silk-screen printing front and back metal
Slurry, sintering.Wherein, prepared by aluminum oxide film generally use chemical vapor deposition (CVD) or atomic layer deposition (ALD)；Oxidation
Silicon thin film is prepared using chemical vapor deposition (CVD) or tubular type thermal oxide (Thermal Oxidation)；Opening generally use swashs
Light mode.
Again without it in addition to being required due to MWT battery processing procedure and conventional batteries processing procedure except laser boring and of both being dielectrically separated from
His difference so that MWT battery can be compatible with the technologies such as black silicon, PERC, HIT, IBC.Wherein, patent CN201410016190.6 is same
When provide a kind of preparation flow of MWT combinations PERC technologies.Patent CN201510612566.4 provides a kind of back of the body passivating film
Preparation process solves MWT hole electrical leakage problems.
As people are to the photoelectric conversion efficiency increasingly higher demands of crystal silicon battery, MWT high-efficiency batteries technology combines it
The technological development and research of his high-efficiency battery technology are also extremely urgent.
The defects of current MWT battery technology combination PERC battery technologies：Need the process that insulating layer is prepared at hole；Swash
Light is punched in the first procedure, causes the higher 0.2%-0.5% of fragment rate of the relatively conventional battery of fragment rate.
Invention content
Goal of the invention：To solve the problems of the prior art, the present invention provides a kind of MWT sun of back side coating film processing
The preparation method of energy battery, reduces cost, simplifies processing procedure, improves product quality.
Technical solution：The preparation method of the MWT solar cells of back side coating film processing of the present invention, including：
(1) substrate is prepared, the substrate is has completed PN junction diffusion technique, front deposition has antireflective coating, the back side to be formed with
Passivation layer and protective film complete lbg, and prepared the silicon solar cell of back side anode, electric field, front electrode
Substrate；
(2) it punches：The hole that the electric current that front electrode collects is led to substrate back for filling paste is formed on substrate
Hole；
(3) cathode is prepared：With conductive paste hole and the cathode of backplate is made, is connected to be formed with front electrode
Current path；
(4) it dries：Baking and curing conducting resinl.
In step (2), punched using laser.
In step (3), the product type of conducting resinl is congratulates Li Shi SOL570.
In step (4), the temperature of drying is 50 ° -200 °.
Specifically, step (1) includes：
(1-1) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, be made in silicon chip surface
Matte；
(1-2) is spread：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(1-3) is etched：The PN junction at silicon chips periphery and the back side after removal diffusion, removes phosphorosilicate glass, and carry out polished backside；
It is prepared by (1-4) backside passivation layer：One layer of aluminium oxide or silicon oxide passivation layer are prepared in silicon chip back side；
The anti-reflection film preparation of (1-5) front：One layer of antireflective film is prepared in front side of silicon wafer；
(1-6) back-protective film preparation：In silicon chip back side passivation layer overlying layer protecting film；
(1-7) lbg：The passivation layer at the back side and protective film are slotted or opening with laser, so as to Al-back-surface-field (BSF) paste and
Silicon substrate forms Ohmic contact；
It is prepared by (1-8) electrode：In the anode and Al-BSF of silicon chip back side printing MWT backplates, front printing front electricity
Pole；
(1-9) is sintered：The cell piece cofiring of slurry after printing is formed into Ohmic contact.
In step (1-2), silicon chip is POCl using single side diffusion, diffusion source is carried out in back-to-back fashion3, diffusion temperature is
820-860 DEG C, diffused sheet resistance is 30-150 Ω/, is further 85-95 Ω/.
In step (1-4), passivation layer is aluminium oxide or silica, and the thickness of passivation layer is 1-50nm.Passivating back is general
Using aluminium oxide or silica, the silicon oxide thickness of common process generation can meet surface passivation effect in 1-2nm.Aluminium oxide
There is the effect of field passivation other than surface passivation, general thickness can be met the requirements in 3-5nm.
Wherein, alumina passivation layer is using the side such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or silk-screen printing
It is prepared by method, silicon oxide passivation layer using chemical vapor deposition (CVD), tubular type thermal oxide (Thermal Oxidation) or
It is prepared by the methods of silk-screen printing.
In step (1-5), antireflective film is silicon nitride, refractive index 1.9-2.2, film thickness 60-100nm.Front antireflective film
Take into account passivation and antireflective, for refractive index generally 2.06, thickness is best in 85nm resultant effects.
In step (1-6), protective film is silicon nitride, refractive index 1.9-2.2, film thickness 10-150nm.Back protection film
Without anti-reflection, thickness is increased to increase body passivation effect, and for thickness generally in 120nm, refractive index is constant, and resultant effect is most
It is good.
Compared with prior art, beneficial effects of the present invention are：
1. the present invention replaces conventional silver paste using conducting resinl, silver paste dosage is greatly reduced, has saved processing procedure cost.Separately
Outside, since conducting resinl does not burn silicon nitride, also Ohmic contact is not formed with hole inner wall silicon, so as to which this will not cause through slurry
Electric leakage so that the process that insulating layer is prepared at hole can be cancelled and be printed for last conducting resinl.Entire processing procedure does not increase newly
Equipment.
2. laser boring is placed on finishing operation, the fragment rate of entire processing procedure can be significantly reduced, improves A grades of product rates.
Description of the drawings
Fig. 1 is the anode printed patterns of MWT rear surface of solar cell electrodes；
Fig. 2 is the Al-BSF printed patterns of MWT solar cells；
Fig. 3 is the front electrode figure of MWT solar cells；
Fig. 4 is the laser boring pattern of MWT solar cells；
Fig. 5 is the cathode printed patterns of MWT rear surface of solar cell electrodes；
Fig. 6 is the structure of MWT solar cells.
Specific embodiment
With reference to specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate the present invention
Rather than limit the scope of the invention, after the present invention has been read, those skilled in the art are to the various equivalences of the present invention
The modification of form falls within the application range as defined in the appended claims.
Embodiment 1
Fig. 6 shows the structure of the MWT solar cells of back side coating film processing, has diffusion including positive (i.e. light-receiving surface)
The silicon chip 1 of layer 2, the antireflective film 3 being overlying on diffusion layer 2, the front gate line electrode (or positive electrode) 4 on antireflective film 3, if
In the passivation layer 5 of silicon chip back side, the protective film 6 being overlying on passivation layer 5, electrode hole 7 is through diffusion layer, silicon chip, antireflective film, passivation
Layer, protective film and Al-BSF with conductive paste electrode hole with positive electrode are connected and are formed the cathode 8 of backplate, cathode 8
In 6 × 6 matrix distributions, the back side of silicon chip is equipped with the anode 9 of the backplate through passivation layer and protective film, and anode is in 5 × 5 squares
Battle array distribution, often row anode is between two row cathode, and passivation layer and protective film are formed with fluting 10, and Al-BSF 11 is overlying on back side guarantor
On cuticula, and avoid backplate.
The preparation method of the MWT solar cells of back side coating film processing of the present invention is as follows：
1. silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
2. making herbs into wool：Using conventional chemical cleaning and texturing method is cleaned and texturing, removes the damage of silicon chip surface
Hinder layer, reduce the recombination rate of photo-generated carrier, while matte is made in silicon chip surface to reduce reflectivity；
3. diffusion：POCl is used in diffusion furnace3Diffusion source carries out high temperature (820-860 DEG C), and single side diffusion is standby back-to-back
PN junction, diffused sheet resistance are controlled in 30-150 Ω/ (the present embodiment is specifically as follows 85-95 Ω/)；
4. etching：It is cleaned after carrying out chemistry using conventional chemical solution, silicon chips periphery and back side PN junction after removal diffusion are gone
Except the phosphorosilicate glass that surface of silicon is formed after diffusion, and carry out polished backside；
5. prepared by backside passivation layer：One layer of 1-50nm (this implementation is plated at the cell piece back side using chemical vapor deposition (CVD)
Example is specifically as follows 3nm) Al of thickness2O3Passivating film；
6. front antireflective film：Refractive index is prepared in 1.9-2.2 (the present embodiment tools in cell piece front using PECVD device
Body can be 2.06) between, film thickness is in the silicon nitride anti-reflection film of 60-100nm (the present embodiment is specifically as follows 85nm)；
7. back protection film：Refractive index is prepared in 1.9-2.2 (the present embodiment tools at the cell piece back side using PECVD device
Body can be 2.08) between, film thickness is in the silicon nitride anti-reflection film of 10-150nm (the present embodiment is specifically as follows 120nm)；
8. lbg：The aluminum oxide passivation film at the back side and silicon nitride protective film are slotted with laser, so that Al-BSF is starched
Material and silicon substrate form Ohmic contact；
9. back electrode prints：Using screen printing mode, print pattern as shown in Figure 1 in silicon chip back side 5 × 5 are uniformly arranged
The anode of the MWT battery backplate of cloth.
10. Al-BSF is printed：Using screen printing mode, the MWT battery back of the body of pattern as shown in Figure 2 is printed in silicon chip back side
The Al-BSF in face, when printing, avoid the hole of anode, cathode and the post laser punching at the MWT battery back side.
11. front electrode prints：Using screen printing mode, in MWT battery front, the MWT of pattern as shown in Figure 3 is printed
Battery front side electrode structure.
12. sintering：The cell piece cofiring of slurry after printing is formed into Ohmic contact.
13. laser boring：By sintered cell piece, by 6 × 6 array patterns as shown in Figure 4, using laser in electricity
Pond on piece opens corresponding laser hole (electrode hole), and hole is round, a diameter of 120 μm.
14. print conducting resinl：By the cell piece after laser boring, by pattern as shown in Figure 5, by the way of silk-screen printing
The conducting resinl (be specifically as follows congratulate on Li Shi SOL570) of printing, prepare the cathode of MWT battery backplate, plug-hole and with front electricity
Pole figure shape is connected to form current path；
15. drying：Using 50 ° -200 ° of temperature, baking and curing conducting resinl.
Fig. 1-Fig. 5 patterns involved in the present embodiment are the pattern in the preparation of existing solar cell, and the present invention not only limits
In above-mentioned pattern, other graphic designs can be used.
The fragment rate of entire processing procedure is put into front compared with laser boring program can reduce 0.2%-0.5%, and A grades of product rates can be promoted
0.5%-1%.
Claims (10)
1. a kind of preparation method of the MWT solar cells of back side coating film processing, which is characterized in that including：
(1) substrate is prepared, the substrate is has completed PN junction diffusion technique, front deposition has antireflective coating, the back side to be formed with passivation
Layer and protective film complete lbg, and prepared the silicon solar cell substrate of back side anode, electric field, front electrode；
(2) it punches：The hole that the electric current that front electrode collects is led to substrate back for filling paste is formed on substrate；
(3) cathode is prepared：With conductive paste hole and the cathode of backplate is made, is connected to form electric current with front electrode
Access；
(4) it dries：Baking and curing conducting resinl.
2. the preparation method of the MWT solar cells of back side coating film processing according to claim 1, which is characterized in that step
Suddenly it in (2), is punched using laser.
3. the preparation method of the MWT solar cells of back side coating film processing according to claim 1, which is characterized in that step
Suddenly in (3), the product type of conducting resinl is congratulates Li Shi SOL570.
4. the preparation method of the MWT solar cells of back side coating film processing according to claim 1, which is characterized in that step
Suddenly in (4), the temperature of drying is 50 ° -200 °.
5. the preparation method of the MWT solar cells of back side coating film processing according to claim 1, which is characterized in that step
Suddenly (1) includes：
(1-1) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, matte is made in silicon chip surface；
(1-2) is spread：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(1-3) is etched：The PN junction at silicon chips periphery and the back side after removal diffusion, removes phosphorosilicate glass, and carry out polished backside；
It is prepared by (1-4) backside passivation layer：One layer of aluminium oxide or silicon oxide passivation layer are prepared in silicon chip back side；
The anti-reflection film preparation of (1-5) front：One layer of antireflective film is prepared in front side of silicon wafer；
(1-6) back-protective film preparation：In silicon chip back side passivation layer overlying layer protecting film；
(1-7) lbg：The passivation layer at the back side and protective film are slotted or be open with laser, so as to Al-back-surface-field (BSF) paste and silicon substrate
Body forms Ohmic contact；
It is prepared by (1-8) electrode：In the anode and Al-BSF of silicon chip back side printing MWT backplates, front printing front electrode；
(1-9) is sintered：The cell piece cofiring of slurry after printing is formed into Ohmic contact.
6. the preparation method of the MWT solar cells of back side coating film processing according to claim 5, which is characterized in that step
Suddenly in (1-2), silicon chip is POCl using single side diffusion, diffusion source is carried out in back-to-back fashion3, diffused sheet resistance for 30-150 Ω/
□。
7. the preparation method of the MWT solar cells of back side coating film processing according to claim 5, which is characterized in that step
Suddenly in (1-4), passivation layer is aluminium oxide or silica, and the thickness of passivation layer is 1-50nm.
8. the preparation method of the MWT solar cells of back side coating film processing according to claim 7, which is characterized in that oxygen
Change aluminum passivation layer to be prepared using chemical vapor deposition, atomic layer deposition or method for printing screen, silicon oxide passivation layer uses
It is prepared by chemical vapor deposition, tubular type thermal oxide or method for printing screen.
9. the preparation method of the MWT solar cells of back side coating film processing according to claim 5, which is characterized in that step
Suddenly in (1-5), antireflective film is silicon nitride, refractive index 1.9-2.2, film thickness 60-100nm.
10. the preparation method of the MWT solar cells of back side coating film processing according to claim 5, which is characterized in that step
Suddenly in (1-6), protective film is silicon nitride, refractive index 1.9-2.2, film thickness 10-150nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987510A (en) * | 2018-08-10 | 2018-12-11 | 广东爱旭科技股份有限公司 | The direct-connected solar cell module of latticed single side and preparation method |
| CN108987516A (en) * | 2018-08-10 | 2018-12-11 | 广东爱旭科技股份有限公司 | Latticed two-sided direct-connected solar cell module and preparation method |
| CN109273536A (en) * | 2018-12-05 | 2019-01-25 | 苏州阿特斯阳光电力科技有限公司 | Solar battery and photovoltaic module |
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| CN109545906A (en) * | 2018-12-24 | 2019-03-29 | 江苏日托光伏科技股份有限公司 | A kind of production method of MWT+PERC solar battery |
| CN110112230A (en) * | 2019-03-29 | 2019-08-09 | 无锡日托光伏科技有限公司 | A kind of preparation method of MWT solar battery |
| CN111081823A (en) * | 2020-01-15 | 2020-04-28 | 浙江爱旭太阳能科技有限公司 | PERC solar cell manufacturing method capable of reducing plating and color difference |
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