CN108198906A - A kind of preparation method of efficient MWT solar cells - Google Patents
A kind of preparation method of efficient MWT solar cells Download PDFInfo
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- CN108198906A CN108198906A CN201711469159.8A CN201711469159A CN108198906A CN 108198906 A CN108198906 A CN 108198906A CN 201711469159 A CN201711469159 A CN 201711469159A CN 108198906 A CN108198906 A CN 108198906A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000009792 diffusion process Methods 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 21
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 235000008216 herbs Nutrition 0.000 claims abstract description 13
- 210000002268 wool Anatomy 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 5
- 229910019213 POCl3 Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 10
- 238000007650 screen-printing Methods 0.000 description 10
- 238000007639 printing Methods 0.000 description 9
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 230000001458 anti-acid effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012188 paraffin wax Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation method of efficient MWT solar cells, including：Silicon chip after making herbs into wool is spread performs etching process again after process masks, and following process is carried out successively after etching procedure：It is prepared by backside passivation layer：One layer of passivation layer is prepared at the cell piece back side；Front antireflective film：One layer of antireflective film is prepared in cell piece front；Back protection film：In cell piece backside passivation layer overlying layer protecting film；Fluting：The antireflective film at the back side and protective film are slotted, so that Al-back-surface-field (BSF) paste and silicon substrate form Ohmic contact；Wherein, process masks are included in silicon chip diffusingsurface and prepare the corresponding mask pattern of positive electrode pattern；Etching procedure includes the PN junction at removal silicon chips periphery and the back side, and throwing knot is carried out to front side diffusion layer other than mask pattern, removes mask slurry, removes phosphorosilicate glass, and carry out polished backside.Battery conversion efficiency prepared by the present invention is high, and process route equipment investment is few, at low cost, is suitble to scale volume production.
Description
Technical field
The present invention relates to silicon solar cell technology fields more particularly to a kind of efficient MWT solar cells to prepare
Method.
Background technology
Metal piercing winding silicon solar cell (MWT) is because its is efficient, and shading-area is small and better appearance characteristics
It receives more and more attention.MWT silicon solar cells are to pass through battery transfer by the energy that laser drill collects front
To cell backside, achieve the purpose that improve transfer efficiency to reduce shading-area.Patent CN201410016190.6 is provided
A kind of low cost preparation method of MWT, change method only increases two procedures on the production process of conventional crystalline silicon battery, i.e.,：
The process to insulate at hole together with increasing by one of laser boring process before making herbs into wool process and increasing after the diffusion or after plated film.Due to
This method is simple for process, increases the technique that equipment is few, becomes at present the unique volume production of MWT battery production in the industry.
Localized contact back of the body passivation (PERC) solar cell is a kind of nearest 2 years high-efficiency solar electricity out newly developed
Pool technology has obtained extensive concern in the industry.Such as patent CN201410484916.9, to provide a kind of silk-screen printing nano oxidized
Aluminium or silica prepare the technology of passivation layer；Patent CN201710054179.2 provides a kind of monocrystalline PERC electricity of low recombination rate
Pool process scheme；Patent CN201710125141.X provides a kind of process program of p-type PERC double-sided solar batteries.PERC
The core of battery process technology is shady face aluminium oxide or the silicon oxide film covering in silicon chip, plays passivated surface and improves length
Wave responds, so as to improve the transfer efficiency of battery.Meanwhile in order to avoid the passivation of the aluminum metal destruction passivation layer in sintering process
Efficiency generally on aluminium oxide or silicon oxide film covers one layer of silicon nitride film, plays a protective role again.Due to aluminium oxide or
Silica is non-conductive, needs to its local openings to form Ohmic contact, collected current.
The core of selective emitter (Selective Emitter SE) battery technology is in cell piece and gate line electrode
Contact zone carry out heavy doping, silver-colored silicon contact resistance is reduced, so as to improve fill factor；Area between cell piece gate line electrode
Domain is lightly doped, and is improved short wavelength light response and is reduced surface recombination, so as to improve open-circuit voltage and short circuit current.Due to
This structure has taken into account open-circuit voltage, short circuit current and fill factor simultaneously, so as to effectively promote the opto-electronic conversion of cell piece effect
Rate.The technology path for preparing SE batteries is many and ripe, including laser doping method, secondary diffusion method, the silicon method of the use of ink and water etc..
As people are to the photoelectric conversion efficiency increasingly higher demands of crystal silicon battery, MWT high-efficiency batteries technology combines it
The technological development and research of his high-efficiency battery technology are also extremely urgent.
Invention content
Goal of the invention：To solve the problems of the prior art, the present invention provides a kind of systems of efficient MWT solar cells
Preparation Method, prepared battery conversion efficiency is high, and process route equipment investment is few, at low cost, is suitble to scale volume production.
Technical solution：The preparation method of efficient MWT solar cells of the present invention, including：After making herbs into wool is spread
Silicon chip performs etching process again after process masks, and following process is carried out successively after etching procedure：
(a) prepared by backside passivation layer：One layer of passivation layer is prepared at the cell piece back side；
(b) front antireflective film：One layer of antireflective film is prepared in cell piece front；
(c) back protection film：In cell piece backside passivation layer overlying layer protecting film；
(d) it slots：The antireflective film at the back side and protective film are slotted, so that Al-back-surface-field (BSF) paste and silicon substrate form ohm and connect
It touches；
Wherein, process masks are included in silicon chip diffusingsurface and prepare the corresponding mask pattern of positive electrode pattern；Etching procedure packet
The PN junction at removal silicon chips periphery and the back side is included, throwing knot is carried out to front side diffusion layer other than mask pattern, removes mask slurry, removal
Phosphorosilicate glass, and carry out polished backside.
Slurry used in mask is paraffin or antiacid high molecular material, 5-30 μm of thickness.
Using alkali or diethylene glycol monobutyl ether removal mask slurry.
The sheet resistance thrown after tying is controlled in 90-150 Ω/, is further 95-105 Ω/.
The passivation layer is aluminium oxide or silica, and it is further 2-10nm that the thickness of passivation layer, which is 1-50nm,.
The antireflective film is silicon nitride, and refractive index 1.9-2.2 is further 2-2.1, film thickness 60-100nm, into one
It walks as 80-90nm；Protective film is silicon nitride, and refractive index 1.9-2.2 is further 2-2.1, film thickness 10-150nm, into one
It walks as 110-125nm.
The enforceable mode of one of which, silicon chip are first punched before being spread through making herbs into wool, are formed to fill out on silicon chip
Fill the hole that the electric current that front electrode collects is led to substrate back by slurry；Mask layer is prepared during process masks in hole.Tool
Preparation step includes：
(1) it punches；
(2) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, suede is made in silicon chip surface
Face；
(3) it spreads：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(4) mask；
(5) it etches；
(6) prepared by backside passivation layer；
(7) front antireflective film；
(8) back protection film；
(9) it slots；
(10) prepared by backplate：Prepared at the cell piece piece back side anode of MWT backplates, backplate cathode and
Carry out plug-hole；
(11) prepared by Al-BSF：Al-BSF is prepared at the cell piece back side；
(12) prepared by front electrode：Front electrode is prepared in cell piece front；
(13) it is sintered：Cell piece cofiring is formed into Ohmic contact.
Another enforceable mode, the preparation method of the efficient MWT solar cells, including：
(1) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, suede is made in silicon chip surface
Face；
(2) it spreads：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(3) mask；
(4) it etches；
(5) prepared by backside passivation layer；
(6) front antireflective film；
(7) back protection film；
(8) it slots；
(9) prepared by backplate：The anode of MWT backplates is prepared in silicon chip back side；
(10) prepared by Al-BSF：Al-BSF is prepared in silicon chip back side；
(11) prepared by front electrode：Front electrode is prepared in cell piece front；
(12) it is sintered：Cell piece cofiring is formed into Ohmic contact；
(13) it punches：It is punched on cell piece, is formed and the electric current that front electrode collects is led into battery for filling paste
The hole at the piece back side；
(14) conducting resinl is printed：With conductive paste hole and the cathode of backplate is made, is connected with front electrode
Form current path；
(15) it dries：Baking and curing conducting resinl.
In the above method, silicon chip is POCl using single side diffusion, diffusion source is carried out in back-to-back fashion3, diffused sheet resistance is
30-100 Ω/ are further 50-60 Ω/.The conducting resinl, which is specifically as follows, congratulates Li Shi SOL570.
Compared with prior art, beneficial effects of the present invention are：
1. realized on traditional PERC batteries and MWT Process ba- sis MWT simultaneously and SE, PERC technology superposition,
By the way of front printing or printing mask slurry, mask layer is prepared in battery front side and hole, while reach SE and MWT
The purpose of insulation, prepared battery conversion efficiency is high, and process route equipment investment is few, at low cost, is suitble to scale volume production.
2. during silver paste plug-hole conventional using the substitution of conducting resinl plug-hole technique, silver paste dosage can be greatly reduced, is saved
Processing procedure cost.
3. be placed on finishing operation using laser boring, the fragment rate of entire processing procedure can be significantly reduced, improves A grades of product
Rate.
Description of the drawings
Fig. 1 is the laser boring pattern of MWT solar cells；
Fig. 2 is a kind of front mask pattern；
Fig. 3 is another front mask pattern；
Fig. 4 is MWT rear surface of solar cell electrode patterns；
Fig. 5 is the Al-BSF of MWT solar cells；
Fig. 6 is MWT front electrode of solar battery patterns；
Fig. 7 is MWT rear surface of solar cell electrode patterns；
Fig. 8 is the cathode pattern of MWT rear surface of solar cell electrodes；
Fig. 9 is the structure diagram of MWT solar cells.
Specific embodiment
With reference to specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate the present invention
Rather than limit the scope of the invention, after the present invention has been read, those skilled in the art are to the various equivalences of the present invention
The modification of form falls within the application range as defined in the appended claims.
Fig. 9 shows the structure of efficient MWT solar cells, has the silicon chip of diffusion layer 2 including positive (i.e. light-receiving surface)
1, the antireflective film 3 being overlying on diffusion layer 2, the front gate line electrode (or positive electrode) 4 on antireflective film 3 is carried on the back set on silicon chip
The passivation layer 5 in face, the protective film 6 being overlying on passivation layer 5, electrode hole 7 is through diffusion layer, silicon chip, antireflective film, passivation layer, protection
Film and Al-BSF, with conductive paste electrode hole with positive electrode are connected and are formed the cathode 8 of backplate, and cathode 8 is in 6 × 6
Matrix distribution, the back side of silicon chip are equipped with the anode 9 of the backplate through passivation layer and protective film, and anode is in 5 × 5 matrixes point
Cloth, often row anode be between two row cathode, passivation layer and protective film are formed with fluting 10, and Al-BSF 11 is overlying on back protection film
On, and avoid backplate.
Embodiment 1
The preparation method of the efficient MWT solar cells of the present embodiment is as follows：
1. silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
2. laser boring：Cell piece is pressed to the MWT hole dot patterns of Fig. 1, the trepanning on cell piece, hole using laser
Hole is round, a diameter of 0.12mm.
3. making herbs into wool：Using conventional chemical cleaning and texturing method is cleaned and texturing, removes the damage of silicon chip surface
Hinder layer, reduce the recombination rate of photo-generated carrier；Matte, which is made, in silicon chip surface simultaneously reduces reflectivity.
4. diffusion：Use POCl3Diffusion source carries out high temperature (temperature is 840 DEG C) single side diffusion back-to-back, diffused sheet resistance control
System is in 60 Ω/；
5. mask：By printing, the mask figure of pattern as shown in Figure 2 (corresponding with positive electrode pattern) is prepared in diffusingsurface
Case, while mask layer is prepared in hole.Mask slurry used is paraffin or antiacid high molecular material, and film thickness is 5-30 μm.
6. etching：Using the PN junction at silicon chips periphery and the back side after conventional chemistry removal diffusion；Using conventional chemistry pair
Front side diffusion layer carries out throwing knot other than mask pattern, throws the sheet resistance after knot and controls in 105 Ω/；Front and hole are removed using alkali
Mask slurry in hole；Phosphorosilicate glass is removed, and carries out polished backside；
7. prepared by backside passivation layer：The Al of one layer of 3nm thickness is plated at the cell piece back side using chemical vapor deposition (CVD)2O3
Passivating film；
8. front antireflective film：Refractive index is prepared 2.06 using PECVD device, film thickness is in the silicon nitride anti-reflection film of 85nm；
9. back protection film：Refractive index is prepared 2.10 using PECVD device, film thickness is in the silicon nitride anti-reflection film of 120nm；
10. lbg：The aluminium oxide at the back side and silicon nitride protective film are slotted with laser；
11. prepared by backplate：Using screen printing mode, anode, the back of the body of MWT backplates are prepared at the cell piece back side
The cathode of face electrode and progress plug-hole, pattern as shown in Figure 4；
12. prepared by Al-BSF：Using screen printing mode, Al-BSF as shown in Figure 5 is prepared at the cell piece back side, is printed
When avoid the anode, cathode and the hole of laser boring at the MWT battery back side；
13. front electrode：Front electrode as shown in Figure 6 is prepared in MWT battery piece front using screen printing mode.
14. sintering：The cell piece cofiring (temperature is 760 DEG C) of slurry after printing is formed into Ohmic contact.
Embodiment 2
The preparation method of the efficient MWT solar cells of the present embodiment is as follows：
1. silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
2. laser boring：Cell piece is pressed to the MWT hole dot patterns of Fig. 1, the trepanning on cell piece, hole using laser
Hole is round, a diameter of 0.12mm.
3. making herbs into wool：Using conventional chemical cleaning and texturing method is cleaned and texturing, removes the damage of silicon chip surface
Hinder layer, reduce the recombination rate of photo-generated carrier；Matte, which is made, in silicon chip surface simultaneously reduces reflectivity；
4. diffusion：Use POCl3Diffusion source carries out high temperature (temperature is 840 DEG C) single side diffusion back-to-back, diffused sheet resistance control
System is in 50 Ω/；
5. mask：By printing, pattern as shown in Figure 3 (, no main gate line corresponding with positive electrode pattern) is prepared in diffusingsurface
Mask pattern, while mask layer is prepared in hole.Mask slurry used is paraffin or antiacid high molecular material, film thickness are
5-30μm。
6. etching：Using the PN junction at silicon chips periphery and the back side after conventional chemistry removal diffusion；Using conventional chemistry pair
Front side diffusion layer carries out throwing knot other than mask pattern, throws the sheet resistance after knot and controls in 95 Ω/；Front and hole are removed using alkali
Interior mask slurry；Phosphorosilicate glass is removed, and carries out polished backside；
7. prepared by backside passivation layer：The Al of one layer of 2nm thickness is plated at the cell piece back side using chemical vapor deposition (CVD)2O3
Passivating film；
8. front antireflective film：Refractive index is prepared between 2.06 using PECVD device, film thickness is in the silicon nitride anti-reflection of 88nm
Film；
9. back protection film：Refractive index is prepared between 2.08 using PECVD device, silicon nitride of the film thickness in 120nm subtracts
Anti- film；
10. lbg：The aluminium oxide at the back side and silicon nitride protective film are slotted with laser；
11. prepared by backplate：Using screen printing mode, anode, the back of the body of MWT backplates are prepared at the cell piece back side
The cathode of face electrode and progress plug-hole, pattern as shown in Figure 4；
12. prepared by Al-BSF：Using screen printing mode, Al-BSF as shown in Figure 5 is prepared at the cell piece back side, is printed
When avoid the anode, cathode and the hole of laser boring at the MWT battery back side.
13. front electrode：Front electrode as shown in Figure 6 is prepared in MWT battery piece front using screen printing mode.
14. sintering：The cell piece cofiring (temperature is 760 DEG C) of slurry after printing is formed into Ohmic contact.
Embodiment 3
The preparation method of the efficient MWT solar cells of the present embodiment is as follows：
1. silicon chip：Using solar level p-type monocrystalline or polysilicon chip as substrate；
2. making herbs into wool：Using conventional chemical cleaning and texturing method is cleaned and texturing, removes the damage of silicon chip surface
Hinder layer, reduce the recombination rate of photo-generated carrier；Matte, which is made, in silicon chip surface simultaneously reduces reflectivity.
3. diffusion：Use POCl3Diffusion source carries out high temperature (temperature is 840 DEG C) single side diffusion back-to-back, diffused sheet resistance control
System is in 50 Ω/；
4. mask：By printing, pattern as shown in Figure 3 (, no main gate line corresponding with positive electrode pattern) is prepared in diffusingsurface
Mask pattern.Mask slurry used is paraffin or antiacid high molecular material, and film thickness is 5-30 μm.
5. etching：Using the PN junction at silicon chips periphery and the back side after conventional chemistry removal diffusion；Using conventional chemistry pair
Front side diffusion layer carries out throwing knot other than mask pattern, throws the sheet resistance after knot and controls in 100 Ω/；It is covered using alkali removal is positive
Film slurry；Phosphorosilicate glass is removed, and carries out polished backside；
6. prepared by backside passivation layer：The Al of one layer of 2nm thickness is plated at the cell piece back side using chemical vapor deposition (CVD)2O3
Passivating film；
7. front antireflective film：Refractive index is prepared between 2.02 using PECVD device, film thickness is in the silicon nitride anti-reflection of 80nm
Film；
8. back protection film：Refractive index is prepared between 2.08 using PECVD device, silicon nitride of the film thickness in 120nm subtracts
Anti- film；
9. lbg：The aluminium oxide at the back side and silicon nitride protective film are slotted with laser；
10. prepared by backplate：Using screen printing mode, the anode, such as of MWT backplates is prepared at the cell piece back side
Pattern shown in Fig. 7；
11. prepared by Al-BSF：Using screen printing mode, Al-BSF as shown in Figure 5 is prepared at the cell piece back side, is printed
When avoid the anode, cathode and the hole of laser boring at the MWT battery back side.
12. front electrode：Front electrode as shown in Figure 6 is prepared in MWT battery piece front using screen printing mode.
13. sintering：The cell piece cofiring (temperature is 760 DEG C) of slurry after printing is formed into Ohmic contact.
14. laser boring：By cell piece by the MWT hole dot patterns of Fig. 1, the trepanning on cell piece using laser,
Hole is round, a diameter of 0.12mm.
15. print conducting resinl：In the hole area of laser opening, printing conducting resinl (is specifically as follows and congratulates Li Shi SOL570.)
It forms the cathode of backplate, plug-hole and is connected to form current path with front electrode figure, pattern as shown in Figure 8；
16. drying：Using 50 ° -200 ° of temperature, baking and curing conducting resinl.
More rearward, whole fragment rate is lower for drilling process, and the drilling process of embodiment 3 is last, compared to embodiment 1-2's
Fragment rate reduces by 0.5%, is dropped using the cost of the more conventional silver paste plug-hole technique (embodiment 1-2) of conducting resinl mode (embodiment 3)
Low, A grades of product rates can promote 0.5%-1%.
Fig. 1-Fig. 8 patterns involved in above-described embodiment are the pattern in the preparation of existing solar cell, and the present invention is not only
It is limited to above-mentioned pattern, other graphic designs can be used.
Claims (8)
1. a kind of preparation method of efficient MWT solar cells, which is characterized in that including：Silicon chip after making herbs into wool is spread is through covering
Process is performed etching after membrane process again, following process is carried out successively after etching procedure：
(a) prepared by backside passivation layer：One layer of passivation layer is prepared at the cell piece back side；
(b) front antireflective film：One layer of antireflective film is prepared in cell piece front；
(c) back protection film：In cell piece backside passivation layer overlying layer protecting film；
(d) it slots：The antireflective film at the back side and protective film are slotted, so that Al-back-surface-field (BSF) paste and silicon substrate form Ohmic contact；
Wherein, process masks are included in silicon chip diffusingsurface and prepare the corresponding mask pattern of positive electrode pattern；Etching procedure includes going
Except silicon chips periphery and the PN junction at the back side, throwing knot is carried out to front side diffusion layer other than mask pattern, mask slurry is removed, removes dephosphorization silicon
Glass, and carry out polished backside.
2. the preparation method of efficient MWT solar cells according to claim 1, which is characterized in that using alkali or diethyl
Glycol monobutyl ether removes mask slurry.
3. the preparation method of efficient MWT solar cells according to claim 1, which is characterized in that passivation layer is oxidation
Aluminium or silica, the thickness of passivation layer is 1-50nm.
4. the preparation method of efficient MWT solar cells according to claim 1, which is characterized in that antireflective film is nitridation
Silicon, refractive index 1.9-2.2, film thickness 60-100nm；Protective film is silicon nitride, refractive index 1.9-2.2, film thickness 10-
150nm。
5. the preparation method of efficient MWT solar cells according to claim 1, which is characterized in that silicon chip is through making herbs into wool
It is first punched before diffusion, the hole that the electric current that front electrode collects is led to substrate back for filling paste is formed on silicon chip
Hole；Mask layer is prepared during process masks in hole.
6. the preparation method of efficient MWT solar cells according to claim 5, which is characterized in that including：
(1) it punches；
(2) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, matte is made in silicon chip surface；
(3) it spreads：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(4) mask；
(5) it etches；
(6) prepared by backside passivation layer；
(7) front antireflective film；
(8) back protection film；
(9) it slots；
(10) prepared by backplate：The anode of MWT backplates, the cathode of backplate and progress are prepared at the cell piece piece back side
Plug-hole；
(11) prepared by Al-BSF：Al-BSF is prepared at the cell piece back side；
(12) prepared by front electrode：Front electrode is prepared in cell piece front；
(13) it is sintered：Cell piece cofiring is formed into Ohmic contact.
7. the preparation method of efficient MWT solar cells according to claim 1, which is characterized in that including：
(1) making herbs into wool：Silicon chip is cleaned and texturing, remove the damaging layer of silicon chip surface, matte is made in silicon chip surface；
(2) it spreads：Doped source is deposited in silicon chip substrate and carries out diffusion for PN junction；
(3) mask；
(4) it etches；
(5) prepared by backside passivation layer；
(6) front antireflective film；
(7) back protection film；
(8) it slots；
(9) prepared by backplate：The anode of MWT backplates is prepared in silicon chip back side；
(10) prepared by Al-BSF：Al-BSF is prepared in silicon chip back side；
(11) prepared by front electrode：Front electrode is prepared in cell piece front；
(12) it is sintered：Cell piece cofiring is formed into Ohmic contact；
(13) it punches：It is punched on cell piece, is formed and the electric current that front electrode collects is led into cell back for filling paste
The hole in face；
(14) conducting resinl is printed：With conductive paste hole and the cathode of backplate is made, is connected to be formed with front electrode
Current path；
(15) it dries：Baking and curing conducting resinl.
8. the preparation method of the efficient MWT solar cells described according to claim 6 or 7, which is characterized in that silicon chip is using the back of the body
The mode of backrest carries out single side diffusion, and diffusion source is POCl3, diffused sheet resistance is 30-100 Ω/.
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| PCT/CN2018/088321 WO2019128073A1 (en) | 2017-12-29 | 2018-05-25 | Method for preparing efficient mwt solar cell |
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| CN109659399A (en) * | 2018-12-29 | 2019-04-19 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of the small exposure mask solar battery of MWT |
| CN109920858A (en) * | 2019-03-29 | 2019-06-21 | 江苏日托光伏科技股份有限公司 | A kind of the p-type MWT battery structure and preparation method of passivation contact |
| CN118016745A (en) * | 2024-04-07 | 2024-05-10 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof, laminated cell and photovoltaic module |
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