CN105826409B - A kind of preparation method of local back field N-type solar cell - Google Patents
A kind of preparation method of local back field N-type solar cell Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 74
- 239000011159 matrix material Substances 0.000 claims abstract description 67
- 239000000243 solution Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 239000002253 acid Substances 0.000 claims abstract description 14
- 239000012670 alkaline solution Substances 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 claims abstract description 9
- 238000007654 immersion Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- -1 tetramethyl hydrogen Chemical class 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to a kind of preparation method of local back field N-type solar cell.A kind of preparation method of local back field N-type solar cell of the present invention, comprises the following steps：N-type crystalline silicon matrix is doped and grown after the processing of barrier layer and print the mask that acidproof slurry forms secondary palisade pattern in its back surface；It is then immersed in the barrier layer for being removed in acid solution and not being covered by the mask region；Mask is removed in immersion alkaline solution, and etches other regions simultaneously and retains n+ heavily doped regions below mask；It is again dipped into the barrier layer that remnants are removed in acid solution；Electrode is finally prepared, the preparation of back surface field N-type solar cell is completed.Its advantage is：Because the secondary grid in the back side are only contacted with local n+ heavily doped regions, so contact resistance is low；Meanwhile, the region of the secondary grid contact in the discord back side is undoped region, so auger recombination is low.Made battery has higher photoelectric transformation efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of preparation of local back field N-type solar cell
Method.
Background technology
Solar cell is a kind of semiconductor devices that can be converted solar energy into electrical energy.At present, the main product of industry
For p-type crystal silicon solar batteries.The battery process is simple, but the efficiency with photo attenuation effect, i.e. battery can with when
Between increase and gradually decay, this mainly due to incorporation P-type silicon substrate in boron atom be combined with the oxygen atom in substrate
Produce the result of boron oxygen pair.Research shows that boron oxygen reduces minority carrier lifetime to playing carrier traps effect, so that
It result in the decay of cell photoelectric conversion efficiency.Relative to p-type crystal silicon battery, N-type crystal silicon battery has that photo attenuation is small, resistance to gold
Belong to impurity pollutant performance it is good, the advantages of minority carrierdiffusion length is long, it is and positive and negative due to N-type crystalline silicon solar cell
Electrode can be fabricated to conventional H type gate line electrode structures, therefore not only front can absorb light to the battery, its back surface
Reflection and scattered light can be absorbed to produce extra electric power.
Common N-type crystalline silicon solar cell is p+/n/n+ structures, and wherein battery front surface adulterates for p+ types, carries on the back table
Adulterated for n+ types in face.In order to reduce the contact resistance between backplate and n+ doped regions, it is desirable that n+ layers are heavy doping.
In order to improve the open-circuit voltage and short circuit current flow of battery, it is desirable to reduce heavy doping brings high auger recombination, at this moment n+ layers are wished again
To be lightly doped.The fill factor, curve factor and open-circuit voltage that prior art can not solve to be brought by back surface n+ type doped regions well are short
Contradiction between the electric current of road.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of system of local back field N-type solar cell
Preparation Method.The local back field N-type solar cell that the preparation method for the local back field N-type solar cell that the present invention is provided is obtained
The contradiction between the fill factor, curve factor that is brought by back surface n+ type doped regions and open-circuit voltage short circuit current flow can preferably be solved.
A kind of preparation method for local back field N-type solar cell that the present invention is provided, its technical scheme is：
A kind of preparation method of local back field N-type solar cell, comprises the following steps：
(1) processing, is doped to N-type crystalline silicon matrix, then in the front surface and back surface system of N-type crystalline silicon matrix
Standby barrier layer, the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processing prints acidproof slurry and dries to form secondary grid
The mask of shape pattern；
(3), the N-type crystalline silicon matrix after step (2) processing is immersed to remove in acid solution and is not covered by the mask region
Barrier layer, positive barrier layer requires not removed by acid solution, but thickness can accordingly be thinned；
(4), the N-type crystalline silicon matrix after step (3) processing is immersed in alkaline solution and removes mask, while alkaline solution
The n+ heavily doped regions not being covered by the mask are removed, the local n+ heavily doped regions being covered by the mask are not destroyed；
(5), N-type crystalline silicon matrix is immersed in acid solution again and removes front surface and the remaining barrier layer of back surface；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processing prepares passivated reflection reducing membrane and in back surface system
Standby passivating film, then the front surface and back surface in N-type crystalline silicon matrix print front electrode using metal paste and the back side is electric
Pole, the secondary grid in the back side of backplate are connected with part n+ heavily doped regions, and local back field N-type solar cell is completed after sintering
Prepare.
Wherein, the method that N-type crystalline silicon matrix is doped processing is comprised the following steps in step (1)：
S1, selection N-type crystalline silicon matrix, and making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix；N-type crystalline silicon base
The resistivity of body is 0.5~15 Ω cm；
S2, by step S1 processing after N-type crystalline silicon matrix be put into industrial diffusion furnace to making herbs into wool face carry out boron diffusion
The p+ doped regions of front surface are formed, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 points
Clock；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix be put into etching cleaning machine, remove the diffused layer of boron and just of back surface
The Pyrex layer on surface；
S4, injected and phosphorus and annealed using N-type crystalline silicon matrix back surface of the ion implantation apparatus after step S3 processing
Processing forms the n+ heavily doped regions of back surface, and the sheet resistance value of n+ heavily doped regions is 10-40 Ω/sqr；The peak temperature of annealing
For 700~950 DEG C, annealing time is 30~200min, and environment source of the gas is N2And O2。
Wherein, barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, backside barrier layer thickness
For 50-100nm.
Wherein, a width of 60-160 μm of the mask of secondary palisade pattern in step (2), parallel to each other, spacing is 1-2mm.
Wherein, the acid solution in step (3) is 5-20% HF solution, and N-type crystalline silicon matrix immersion 5-20%HF is molten
Time in liquid is 0.5-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
Wherein, the alkaline solution in step (4) be 10~30% KOH solution, 10~30% NaOH solution, 10~
30% tetramethyl ammonium hydroxide solution or 10~30% ethylenediamine solution；The temperature of alkaline solution is 50-90 DEG C, N-type
Reaction time in crystal silicon substrate immersion alkaline solution is 0.5-5 minutes, takes out clear with deionized water after N-type crystalline silicon matrix
Wash.
Wherein, during the acid solution in step (5) is 5-20% HF solution, N-type crystalline silicon matrix immerses 5-20%HF
Time in solution is 2-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
Wherein, in step (6), front electrode and backplate are prepared in the front surface and back surface of N-type crystalline silicon matrix
Method be：The backplate of H type grid lines is printed using silver paste and dried in the back surface of N-type crystalline silicon matrix, wherein
The wide 0.5-3mm of back side main grid, spaced set 3-6 roots, back side 40-100 μm of grid width of pair；In the front surface of N-type crystalline silicon matrix
Using mixing the secondary grid of aluminum paste printing front main grid and front and being dried, the wherein wide 0.5-3mm of front main grid, spaced set
3-6 roots, front 40-100 μm of grid width of pair；The peak temperature of sintering is not higher than 900 DEG C.
The implementation of the present invention includes following technique effect：
The present invention's has the technical effect that：The present invention is by setting deielectric-coating, acidproof slurry mask, acid liquid corrosion
After the sequence of operations such as alkali liquid corrosion processing, local n+ heavily doped regions can be formed at the back side of N-type crystalline silicon, follow-up gold
During categoryization, secondary grid metal slurry only contacts local n+ heavily doped regions.Because the secondary grid in the back side only connect with local n+ heavily doped regions
Touch, so contact resistance is low；Meanwhile, the region of the secondary grid contact of discord is undoped region, so auger recombination is low.So according to
N-type solar cell prepared by the inventive method has higher fill factor, curve factor, open-circuit voltage and short circuit current flow simultaneously, so tool
There is higher photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the battery after a kind of preparation method step one of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 2 is the battery after a kind of preparation method step 4 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 3 is the battery after a kind of preparation method step 5 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 4 is the battery after a kind of preparation method step 6 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 5 is the battery after a kind of preparation method step 7 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 6 is the battery after a kind of preparation method step 8 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 7 is the battery after a kind of preparation method step 9 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 8 is the battery after a kind of preparation method step 10 of local back field N-type solar cell of the embodiment of the present invention
Structural section schematic diagram.
Fig. 9 is the electricity after a kind of preparation method step 11 of local back field N-type solar cell of the embodiment of the present invention
Pool structure schematic cross-section.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Referring to shown in Fig. 1 to Fig. 9, a kind of preparation method for local back field N-type solar cell that the present embodiment is provided is wrapped
Include following steps：
(1) 156mm × 156mm N-type crystalline silicon matrix 10, is selected, and to the preceding surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50~300 μm, preferably 80~200 μm；Complete the battery structure after this step as shown in Figure 1.
(2), the N-type crystalline silicon matrix 10 after step (1) processing is put into industrial diffusion furnace boron is carried out to making herbs into wool face
The p+ doped regions 12 of front surface are diffuseed to form, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-
180 minutes.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably 50-70 Ω/sqr.
(3) the N-type crystalline silicon matrix 10 after, boron is spread is put into etching cleaning machine, removes the diffused layer of boron of back surface
With the Pyrex layer of front surface.
(4), inject phosphorus using N-type crystalline silicon matrix 10 back surface of the ion implantation apparatus after step (3) processing and carry out
Annealing forms the n+ heavily doped regions 16 of back surface, and the sheet resistance of n+ heavily doped regions 16 is 10-40 Ω/sqr.The peak of annealing
It is 700~950 DEG C to be worth temperature, and preferably 850~900 DEG C, annealing time is 30~200min, preferably 60~200min, ring
Border source of the gas is preferably N2And O2.Complete the battery structure after this step as shown in Figure 2.
(5), barrier layer is grown on the front surface of N-type crystalline silicon matrix 10 and back surface after step (4) processing.Barrier layer
Can be SiO2Layer or SiNxLayer, the present embodiment uses SiO2Layer is used as specific example.Specific method is, by N-type crystalline silicon base
Body 10 is put into PECVD (plasma enhanced chemical vapor deposition) equipment, front surface growth thickness be 200-300nm just
Face SiO2Layer 13, in the back side SiO that back surface growth thickness is 50-100nm2Layer 17.Complete the battery structure after this step such as figure
Shown in 3.
(6), the back surface of the N-type crystalline silicon matrix 10 after step (5) processing prints acidproof slurry 40 and dried to be formed
Mask.Its pattern excessively after ink is secondary grid line structure, and secondary 60-160 μm of grid line line width, long 154mm is parallel to each other, and spacing is 1-
2mm, preferably 1.55mm, set 100 altogether.Complete the battery structure after this step as shown in Figure 4.
(7), the N-type crystalline silicon matrix 10 after step (6) processing is immersed in 5-20%HF solution, taken after 0.5-5 minutes
Go out and cleaned up with deionized water.Now back surface is not covered by the mask the SiO in region2Removed totally by HF, and front surface is still
There is most of SiO2It is not removed.Complete the battery structure after this step as shown in Figure 5.
(8), the N-type crystalline silicon matrix 10 after step (7) processing is immersed in the alkali lye of 10~30% percentage by weights, work
Make temperature for 50-90 DEG C, reaction taking-up in 0.5-5 minutes is cleaned up with deionized water.Now back surface is not covered by the mask area
Domain is because without SiO2Protection will be reacted with alkali lye, the n+ heavily doped regions in these regions are removed.Simultaneously remaining
Mask will also be removed totally by alkali lye.And the region being covered by the mask is then part n+ heavily doped regions 161；Note in this step
In, the p+ doped regions 12 of front surface and the local n+ heavily doped regions 161 of back surface are because surface is covered with SiO2Film, not
It can be reacted with alkali lye.Alkali lye can be KOH, NaOH, TMAH or ethylenediamine solution.Complete after this step
Battery structure is as shown in Figure 6.
(9), the N-type crystalline silicon matrix 10 after step (8) processing is immersed in 5-20%HF solution, taken out after 2-5 minutes
Cleaned up with deionized water.The now remaining SiO of front surface and back surface2Layer is removed clean.Complete after this step
Battery structure is as shown in Figure 7.
(10), the front surface of the N-type crystalline silicon matrix 10 after step (9) processing sets passivated reflection reducing membrane 14 and in back of the body table
Face sets passivating film 18, and the passivated reflection reducing membrane 14 of wherein front surface is SiO2、SiNxAnd Al2O3It is one or more in deielectric-coating, the back of the body
The passivating film 18 on surface is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of front surface passivated reflection reducing membrane 14 is 70
~110nm；The thickness of back surface passivation film 18 is to be not less than 20nm.Complete the battery structure after this step as shown in Figure 8.
(11), print electrode and dried using silver paste in the back surface of N-type crystalline silicon matrix 10, its electrode pattern is
H type grid lines, wherein back side main grid 22 line width 0.5-3mm, long 154mm, spaced set 3-6 roots, back side pair grid 26 line width 40-
100 μm, long 154mm is parallel to each other, and spacing is 1.55mm, and 100 are set altogether.Must fall the secondary grid 26 in the back side after printing
In local n+ heavily doped regions 161.In the front surface of N-type crystalline silicon matrix 10 using mixing aluminum paste printing front main grid 20 and just
Face pair grid 24 are simultaneously dried.Wherein front main grid 20 line width 0.5-3mm, long 154mm, spaced set 3-6 roots.Positive pair grid
24 40-100 μm of line widths, long 154mm is parallel to each other, and spacing is 1.95mm, and 80 are set altogether.Complete the battery knot after this step
Structure is as shown in Figure 9.
(12), the N-type crystalline silicon matrix 10 after step (11) processing is transmitted and is sintered into belt sintering stove, peak is sintered
It is not higher than 900 DEG C to be worth temperature, that is, completes the making of local back field N-type solar cell.
The preparation method for the local back field N-type solar cell that the present embodiment is provided is by setting deielectric-coating, acidproof slurry
After the sequence of operations such as mask, acid liquid corrosion and alkali liquid corrosion processing, selective office can be formed at the back side of N-type crystalline silicon
Portion's n+ heavily doped regions, during subsequent metallisation, secondary grid metal slurry only contacts local n+ heavily doped regions.Due to the only drawn game of secondary grid
Portion's n+ heavily doped regions contact, so contact resistance is low, fill factor, curve factor is high；Meanwhile, the region of the secondary grid contact of discord is undoped
Region, so auger recombination is low, open-circuit voltage is high.And prior art is used, if the n+ doped regions at the back side are heavy doping, though
Right contact resistance is low, but open-circuit voltage is also low；If the n+ doped regions at the back side are to be lightly doped, although open-circuit voltage is high, but
It is that contact resistance is high, fill factor, curve factor is poor.As can be seen here, the n-type solar cell prepared according to the method described above can overcome existing
Open-circuit voltage and the contradiction of fill factor, curve factor that technology is present, so with higher photoelectric transformation efficiency.
Shown in Figure 9, the present embodiment additionally provides a kind of local back field N-type solar cell, including N-type crystalline silicon base
Body 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped regions 12 and front surface passivated reflection reducing membrane successively from inside to outside
14；The back surface of N-type crystalline silicon matrix 10 includes local n+ heavily doped regions 161 and back surface passivation film successively from inside to outside
18；N-type crystalline silicon matrix 10 also includes the backplate for being arranged on back surface, and backplate includes back side main grid 22 and back side pair
Grid 26, back side pair grid are connected with part n+ heavily doped regions 161.Due to the secondary grid 26 in the back side only with local n+ heavily doped regions 161
Contact, so contact resistance is low；Meanwhile, the region of the secondary grid contact in the discord back side is undoped region, so auger recombination is low.This
The local back field N-type solar cell of embodiment has higher fill factor, curve factor, open-circuit voltage and short circuit current flow simultaneously, so tool
There is higher photoelectric transformation efficiency.
Preferably, the secondary grid of back side main grid and the back side constitute H type grid lines, and the wherein width of back side main grid 22 0.5-3mm is equidistantly set
3-6 roots are put, back side pair grid 26 are wide 40-100 μm.N-type crystalline silicon matrix 10 also includes the front electrode for being arranged on front surface, front
Electrode includes the secondary grid 24 of front main grid 20 and front, and the wherein width of front main grid 20 0.5-3mm, spaced set 3-6 roots, front is secondary
Grid 24 are wide 40-100 μm.Passivated reflection reducing membrane 14 is SiO2、SiNxOr Al2O3One or more in deielectric-coating, passivating film 18 is SiO2
And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of passivated reflection reducing membrane is 70~110nm；The thickness of passivating film is to be not less than
20nm。
In the present embodiment, backplate is formed by printing silver paste sintering, and front electrode is mixed aluminum paste by printing and sintered
Form, therefore the back side main grid 22 of local back field N-type solar cell is silver-colored back side main grid, back side pair grid 26 are the secondary grid in the silver-colored back side；
Front main grid 20 is aerdentalloy front main grid, and front pair grid 24 are the secondary grid in aerdentalloy front.
The present embodiment additionally provides a kind of local back field N-type solar cell module, including the front layer from top to bottom connected
Material, encapsulating material, local back field N-type solar cell, encapsulating material, backsheet, local back field N-type solar cell is
A kind of above-mentioned local back field N-type solar cell.The structure and work of the local back field N-type solar cell module of the present embodiment
Make principle only to relate to using technology well known in the art, and the improvement of the local back field N-type solar cell module of the invention provided
And above-mentioned local back field N-type solar cell, other parts are not modified.Therefore this specification is only to local back surface field N-type
Solar cell and preparation method thereof is described in detail, and the miscellaneous part and work to local back surface field N-type solar cell module are former
Reason is repeated no more here.Those skilled in the art are in the content basis that this specification is described, you can realize the part of the present invention
Back surface field N-type solar cell module.
The present embodiment additionally provides a kind of local back field N-type solar cell system, including one or more than one series connection
Local back field N-type solar cell module, local back field N-type solar cell module is a kind of above-mentioned local back field N-type
Solar cell module.The structure and working principle of the local back field N-type solar cell system of the present embodiment uses this area
Known technology, and the improvement of the local back field N-type solar cell system of the invention provided only relates to above-mentioned local back surface field N
Other parts are not modified by type solar cell.Therefore this specification is only to local back surface field N-type solar cell and its preparation
Method is described in detail, and the miscellaneous part and operation principle of local back surface field N-type solar cell system are repeated no more here.Ability
Field technique personnel are in the content basis that this specification is described, you can realize the local back field N-type solar cell system of the present invention
System.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (8)
1. a kind of preparation method of local back field N-type solar cell, it is characterised in that：Comprise the following steps：
(1) processing, is doped to N-type crystalline silicon matrix, then resistance is prepared in the front surface and back surface of N-type crystalline silicon matrix
Barrier, the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processing prints acidproof slurry and dries to form secondary panel map
The mask of case；
(3), the N-type crystalline silicon matrix after step (2) processing is immersed the resistance for not being covered by the mask region is removed in acid solution
Barrier, positive barrier layer requires not removed by acid solution, but thickness can accordingly be thinned；
(4), the N-type crystalline silicon matrix after step (3) processing is immersed in alkaline solution and removes mask, alkaline solution is removed simultaneously
The n+ heavily doped regions not being covered by the mask, the region being covered by the mask is part n+ heavily doped regions；
(5), N-type crystalline silicon matrix is immersed in acid solution again and removes front surface and the remaining barrier layer of back surface；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processing prepares passivated reflection reducing membrane and prepared in back surface blunt
Change film, then use metal paste printing front electrode and backplate, the back of the body in the front surface and back surface of N-type crystalline silicon matrix
The secondary grid in the back side of face electrode are connected with part n+ heavily doped regions, and the preparation of local back field N-type solar cell is completed after sintering.
2. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：Step
(1) method that N-type crystalline silicon matrix is doped processing is comprised the following steps in：
S1, selection N-type crystalline silicon matrix, and making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix；N-type crystalline silicon matrix
Resistivity is 0.5~15 Ω cm；
S2, by step S1 processing after N-type crystalline silicon matrix be put into industrial diffusion furnace to making herbs into wool face carry out boron diffuse to form
The p+ doped regions of front surface, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 minutes；Boron
Sheet resistance value after diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix be put into etching cleaning machine, remove back surface diffused layer of boron and front surface
Pyrex layer；
S4, injected and phosphorus and made annealing treatment using N-type crystalline silicon matrix back surface of the ion implantation apparatus after step S3 processing
The n+ heavily doped regions of back surface are formed, the sheet resistance value of n+ heavily doped regions is 10-40 Ω/sqr；The peak temperature of annealing is
700~950 DEG C, annealing time is 30~200min, and environment source of the gas is N2And O2。
3. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：It is described
Barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, and backside barrier layer thickness is 50-100nm.
4. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：Step
(2) a width of 60-160 μm of the mask of secondary palisade pattern in, parallel to each other, spacing is 1-2mm.
5. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：Step
(3) time in the HF solution that the acid solution in is 5-20%, N-type crystalline silicon matrix immersion 5-20%HF solution is 0.5-5
Minute, cleaned after taking out N-type crystalline silicon matrix with deionized water.
6. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：Step
(4) alkaline solution in is 10~30% KOH solution, 10~30% NaOH solution, 10~30% tetramethyl hydrogen
Ammonium hydroxide solution or 10~30% ethylenediamine solution；The temperature of alkaline solution is 50-90 DEG C, the immersion of N-type crystalline silicon matrix
Reaction time in alkaline solution is 0.5-5 minutes, is cleaned after taking out N-type crystalline silicon matrix with deionized water.
7. a kind of preparation method of local back field N-type solar cell according to claim 1, it is characterised in that：Step
(5) during the acid solution in is 5-20% HF solution, the time in N-type crystalline silicon matrix immersion 5-20%HF solution is 2-5
Minute, cleaned after taking out N-type crystalline silicon matrix with deionized water.
8. according to a kind of preparation method of any described local back field N-type solar cell of claim 1~7, its feature exists
In：In step (6), the method for preparing front electrode and backplate in the front surface and back surface of N-type crystalline silicon matrix is：
The back surface of N-type crystalline silicon matrix prints the backplate of H type grid lines using silver paste and dried, and wherein back side main grid is wide
0.5-3mm, spaced set 3-6 roots, back side 40-100 μm of grid width of pair；It is silver-colored using aluminium is mixed in the front surface of N-type crystalline silicon matrix
The secondary grid of slurry printing front main grid and front are simultaneously dried, the wherein wide 0.5-3mm of front main grid, spaced set 3-6 roots, front
Secondary 40-100 μm of grid width.
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| CN111463323A (en) * | 2020-04-30 | 2020-07-28 | 常州时创能源股份有限公司 | P-type selective doping method |
| CN111463322A (en) * | 2020-04-30 | 2020-07-28 | 常州时创能源股份有限公司 | P-type double-sided battery and preparation method thereof |
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