CN110233179A - A kind of crystal-silicon solar cell and preparation method thereof of selectivity passivation contact structures - Google Patents
A kind of crystal-silicon solar cell and preparation method thereof of selectivity passivation contact structures Download PDFInfo
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- CN110233179A CN110233179A CN201910474323.7A CN201910474323A CN110233179A CN 110233179 A CN110233179 A CN 110233179A CN 201910474323 A CN201910474323 A CN 201910474323A CN 110233179 A CN110233179 A CN 110233179A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000002161 passivation Methods 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 79
- 229920005591 polysilicon Polymers 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000011159 matrix material Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 210000004209 hair Anatomy 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a kind of crystal-silicon solar cells of selectivity passivation contact structures, it include: P-type silicon matrix, the P-type silicon front side of matrix is equipped with emission layer, the emission layer front is equipped with the first passivation layer, the P-type silicon matrix back side is equipped with ultra-thin silicon oxide layer, the ultra-thin silicon oxide layer back side is equipped with polysilicon layer, and the polysilicon layer back side is equipped with the second passivation layer；Under the premise of not purchasing expensive ion implantation device, selectivity passivation contact structures are realized, while not only improving battery efficiency, more reduction producing line upgrade cost.
Description
Technical field
The present invention relates to technical field of solar cells, and in particular to a kind of crystalline silicon sun of selectivity passivation contact structures
Battery and preparation method thereof.
Background technique
In recent years, the PERC (Passivated Emitter and Rear Cell) of passivating back is carried out using dielectric layer
Extensive attention of the crystal-silicon solar cell by photovoltaic industry, production capacity are promoted rapidly, are risen to 2018 from the 5GW in the end of the year 2015
The 78GW at bottom, it has also become the main product of photovoltaic market.With the promotion of production capacity, the efficiency of PERC battery is also continuously improved, mesh
Preceding volume production average efficiency has reached 22%.But PERC battery must the aperture on dielectric layer, to realize that the electrode at the back side connects
Touching, but electrode contact region recombination rate is fast, causes back surface entirety recombination rate that can not further decrease, influences PERC battery
The further promotion of efficiency.
2013, German Fraunhofer solar energy research institute (Fraunhofer ISE) was proposed tunnel oxide passivation
(TOPCon) technology of contact constitutes passivation contact structures using ultra-thin silicon oxide layer and doped polysilicon layer, for silicon chip back side
While providing excellent surface passivation, majority carrier can penetrate ultra-thin silicon oxide layer, and the electrode being doped on polysilicon is received
Collection is not necessarily to aperture, to further decrease back surface recombination rate, improves battery efficiency.
Being entrained in entire surface for traditional passivation contact crystalline silicon solar cell polysilicon layer is uniform, but metal
Contact area and nonmetallic contact area propose different requirements to doping concentration, and Metal contact regions need higher doping
Concentration reduces contact resistance, rather than Metal contact regions need lower doping concentration to inhibit compound.Conventional method uses
Ion implantation device realizes subregion doping.But ion implantation device is expensive, producing line upgrade cost is high.
Summary of the invention
In order to solve the above-mentioned technical problem, the invention proposes a kind of crystalline silicon sun electricity of selectivity passivation contact structures
It realizes selectivity passivation contact structures under the premise of not purchasing expensive ion implantation device, not only mentions in pond and preparation method thereof
While high battery efficiency, more reduction producing line upgrade cost.
In order to achieve the above object, technical scheme is as follows:
A kind of crystal-silicon solar cell of selectivity passivation contact structures, comprising: P-type silicon matrix, the P-type silicon matrix is just
Face is equipped with emission layer, and the emission layer front is equipped with the first passivation layer, and the P-type silicon matrix back side is equipped with ultra-thin silicon oxide layer,
The ultra-thin silicon oxide layer back side is equipped with polysilicon layer, and the polysilicon layer back side is equipped with the second passivation layer.
A kind of crystal-silicon solar cell and preparation method thereof of selectivity passivation contact structures provided by the invention, is not being purchased
Under the premise of setting expensive ion implantation device, realize that selectivity passivation contact structures more drop while not only improving battery efficiency
Low yield line upgrade cost.
Based on the above technical solution, following improvement can also be done:
As a preferred option, the polysilicon layer include: low doping concentration polysilicon layer and high-dopant concentration it is more
Crystal silicon layer, the polysilicon layer of the low doping concentration are connect with the polysilicon layer interval of the high-dopant concentration.
As a preferred option, comprising: metal electrode, the metal electrode include: front electrode and rear electrode, described
Front electrode and the emission layer Ohmic contact.
As a preferred option, the polysilicon layer Ohmic contact of the rear electrode and high-dopant concentration.
As a preferred option, the front electrode and the rear electrode are in grid linear structure.
As a preferred option, the ultra-thin silicon oxide layer with a thickness of 0.1-2nm.
As a preferred option, the P-type silicon matrix is in boron doped P-type silicon matrix or the P-type silicon matrix of gallium doping
It is any.
As a preferred option, the emission layer is the N of phosphorus doping+Type silicon.
As a preferred option, first passivation layer is silicon nitride layer, and second passivation layer is aluminium oxide and nitridation
Silicon lamination.
As a preferred option, a kind of preparation method of the crystal-silicon solar cell of selectivity passivation contact structures, including
Following steps:
1) P-type silicon matrix goes cutting damage, positive making herbs into wool, polished backside；
2) the ultra-thin silicon oxide layer of P-type silicon matrix backside deposition；
3) in ultra-thin silicon oxide layer backside deposition amorphous silicon layer, amorphous silicon layer is after heat treatment changed into polysilicon layer；
4) in P-type silicon front side of matrix deposition mask, the exposure mask is silicon nitride, and front is opposite to be stacked, and is put into diffusion furnace tube
In, boron is expanded at the polysilicon layer back side, forms the polysilicon layer of high-dopant concentration；
5) single-side acid washes away the Pyrex except the polysilicon layer back side, in polysilicon layer back side screen printable barrier, resistance
The figure of barrier is the figure of Metal contact regions；
6) because the boron of diffusion is in polysilicon layer surface concentration highest, inside by surface, doping concentration is gradually decreased, so
The polysilicon layer of etching alkaline solution, non-covering barrier layer is changed into the polysilicon layer of low doping concentration；
7) barrier layer at the polysilicon layer back side and the exposure mask of P-type silicon front side of matrix are removed；
8) in polysilicon layer backside deposition exposure mask, the exposure mask is silicon nitride, is put into diffusion furnace tube back-to-back, P-type silicon
Front side of matrix expands phosphorus, forms emission layer；
9) etching edge, and remove the phosphorosilicate glass of P-type silicon front side of matrix and the exposure mask at the polysilicon layer back side；
10) the first passivation layer is deposited in emission layer front, the first passivation layer plays the role of antireflective simultaneously, in polysilicon
Layer the second passivation layer of backside deposition；
11) the positive rear electrode of silk-screen printing, positive electrode print on the emitter, and back electrode is printed on the highly doped of polysilicon layer
On the polysilicon layer of miscellaneous concentration, metallization is completed in sintering.
Detailed description of the invention
Fig. 1 is a kind of structure of the crystal-silicon solar cell of selectivity passivation contact structures provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of flow chart of the crystal-silicon solar cell preparation method of selectivity passivation contact structures of the invention；
Wherein: 1. front electrodes, 2. first passivation layers, 3. emission layers, 4.P type silicon substrate, 5. ultra-thin silicon oxide layers, more than 6.
Crystal silicon layer, 7. second passivation layers, 8. rear electrodes, the polysilicon layer of 9. high-dopant concentrations, the polysilicon of 10. low doping concentrations
Layer, 11. front electrodes, 12. rear electrodes.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
In order to reach the purpose of the present invention, as shown in Fig. 1 to 2, one of the present embodiment selectively passivation contact structures
Crystal-silicon solar cell, comprising: P-type silicon matrix 4,4 front of the P-type silicon matrix are equipped with emission layer 3, and the emission layer 3 is just
Face is equipped with the first passivation layer 2, and 4 back side of P-type silicon matrix is equipped with ultra-thin silicon oxide layer 5, and ultra-thin 5 back side of silicon oxide layer is set
There is polysilicon layer 6,6 back side of polysilicon layer is equipped with the second passivation layer 7.
A kind of crystal-silicon solar cell and preparation method thereof of selectivity passivation contact structures provided by the invention, is not being purchased
Under the premise of setting expensive ion implantation device, realize that selectivity passivation contact structures more drop while not only improving battery efficiency
Low yield line upgrade cost.
In some embodiments, the polysilicon layer 6 includes: the polysilicon layer 10 and high-dopant concentration of low doping concentration
Polysilicon layer 9, the polysilicon layer 10 of the low doping concentration and the polysilicon layer 9 of the high-dopant concentration are spaced and connect.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, a kind of crystal-silicon solar cell of selectivity passivation contact structures, comprising: metal electrode,
The metal electrode includes: front electrode (1 and 11) and rear electrode (8 and 12), the front electrode (1 and 11) and the hair
Penetrate 3 Ohmic contact of layer.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, 9 Ohmic contact of polysilicon layer of the rear electrode (8 and 12) and high-dopant concentration.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, the front electrode (1 and 11) and the rear electrode (8 and 12) are in grid line shape knot
Structure.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, the ultra-thin silicon oxide layer 5 with a thickness of 0.1-2nm.
Using above-described embodiment, the ultra-thin silicon oxide layer 5 with a thickness of 0.1-2nm, the thickness of the ultra-thin silicon oxide layer 5
Preferred 1-1.5nm is spent, structure is simple, and it is easy to operate, it realizes selectivity passivation contact structures, is improving the same of battery efficiency
When, reduce producing line upgrade cost.
In some embodiments, the P-type silicon matrix 4 is in boron doped P-type silicon matrix or the P-type silicon matrix of gallium doping
It is any.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, the emission layer 3 is the N of phosphorus doping+Type silicon.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, first passivation layer 2 is silicon nitride layer, and second passivation layer 7 is aluminium oxide and nitrogen
SiClx lamination.
Using above-described embodiment, structure is simple, easy to operate, realizes selectivity passivation contact structures, is improving battery
While efficiency, producing line upgrade cost is reduced.
In some embodiments, a kind of preparation method of the crystal-silicon solar cell of selectivity passivation contact structures, including
Following steps:
1) P-type silicon matrix 4 goes cutting damage, positive making herbs into wool, polished backside；
2) the ultra-thin silicon oxide layer 5 of 4 backside deposition of P-type silicon matrix, deposition method can be thermal oxide, ozone oxidation or humidifying
Learn oxidation；
3) in ultra-thin 5 backside deposition amorphous silicon layer of silicon oxide layer, deposition method can be PECVD (plasma enhancing
Learn gas phase and sink method), LPCVD (low-pressure chemical vapor deposition) or HWCVD (hot-wire chemical gas-phase deposition), amorphous silicon layer is thermally treated
After be changed into polysilicon layer 6；
4) in the positive deposition mask of P-type silicon matrix 4, the exposure mask is silicon nitride, and front is opposite to be stacked, and is put into diffusion furnace tube
In, boron is expanded at 6 back side of polysilicon layer, forms the polysilicon layer 9 of high-dopant concentration, and furnace tube temperature is 900-1000 DEG C；
5) single-side acid washes away the Pyrex except 6 back side of polysilicon layer, in polysilicon layer back side screen printable barrier, resistance
The figure of barrier is the figure of Metal contact regions；
6) because the boron of diffusion is in 6 surface concentration highest of polysilicon layer, inside by surface, doping concentration is gradually decreased, institute
With etching alkaline solution, the polysilicon layer 6 of non-covering barrier layer is changed into the polysilicon layer 10 of low doping concentration；
7) barrier layer and the positive exposure mask of P-type silicon matrix 4 at 6 back side of polysilicon layer are removed；
8) in 6 backside deposition exposure mask of polysilicon layer, the exposure mask is silicon nitride, is put into diffusion furnace tube back-to-back, P-type silicon
Phosphorus is expanded in 4 front of matrix, forms emission layer 3, and furnace tube temperature is 800-900 DEG C；
9) etching edge, and remove the exposure mask at 6 back side of the positive phosphorosilicate glass of P-type silicon matrix 4 and polysilicon layer；
10) in 3 front the first passivation layer 2 of deposition of emission layer, the first passivation layer 2 plays the role of antireflective simultaneously, more
6 the second passivation layer of backside deposition 7 of crystal silicon layer；
11) the positive rear electrode of silk-screen printing, positive electrode are printed on emission layer 3, and back electrode is printed on the height of polysilicon layer
On the polysilicon layer 9 of doping concentration, metallization is completed in sintering.
Using above-described embodiment, using diffusion technique to doping polycrystalline silicon layer, doping concentration is inwardly gradually dropped by surface
It is low.Using this characteristic, by printing barrier layer protected metallic region, the doping concentration of non-metallic regions is reduced, thus real
Now selectivity passivation contact structures.
The crystal-silicon solar cells of selectivity passivation contact structures is as shown in Figure 1, wherein 4 P-type silicon adulterated for boron or gallium
Matrix is the N of phosphorus doping in the front of P-type silicon matrix 4+Type silicon 3, referred to as emission layer 3 constitute PN junction with P-type silicon matrix 4.?
The front of emission layer 3 is the first passivation layer 2, which plays the role of antireflective, first passivation layer 2 simultaneously
For silicon nitride.In addition, being additionally provided with front electrode (1 and 11) in the front of emission layer 3, the front electrode (1 and 11) is silver, just
Face electrode (1 and 11) and emission layer 3 form Ohmic contact.It is equipped with ultra-thin silicon oxide layer 5 at the back side of P-type silicon matrix 4, ultra-thin
The back side of silicon oxide layer 5 is boron doped polysilicon layer 6, and the polysilicon layer 6 includes: the 10 (P of polysilicon layer of low doping concentration
Type silicon) and high-dopant concentration polysilicon layer 9 (P+ type silicon).The second passivation layer 7 is equipped at the back side of polysilicon layer 6, described the
Two passivation layers 7 are aluminium oxide/silicon nitride stack.In addition, the high-dopant concentration of polysilicon layer 6 polysilicon layer 9 the back side also
Equipped with rear electrode (8 and 12), rear electrode (8 and 12) is any one of silver or aerdentalloy, rear electrode (8 Hes
12) Ohmic contact is formed with the polysilicon layer 9 of high-dopant concentration.
A kind of crystal-silicon solar cell and preparation method thereof of selectivity passivation contact structures provided by the invention, generates such as
Under the utility model has the advantages that
1) present invention realizes selectivity passivation contact structures, is mentioning under the premise of not purchasing expensive ion implantation device
While high battery efficiency, producing line upgrade cost is reduced；
2) using diffusion technique to doping polycrystalline silicon layer, doping concentration is inwardly gradually decreased by surface.Utilize this spy
Property, by printing barrier layer protected metallic region, the doping concentration of non-metallic regions is reduced, to realize that selectivity passivation connects
Touch structure.
The above are merely the preferred embodiment of the present invention, it is noted that for those of ordinary skill in the art,
Without departing from the concept of the premise of the invention, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (10)
1. a kind of crystal-silicon solar cell of selectivity passivation contact structures characterized by comprising P-type silicon matrix, the P
Type silicon substrate front is equipped with emission layer, and the emission layer front is equipped with the first passivation layer, and the P-type silicon matrix back side is equipped with ultra-thin
Silicon oxide layer, the ultra-thin silicon oxide layer back side are equipped with polysilicon layer, and the polysilicon layer back side is equipped with the second passivation layer.
2. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 1, which is characterized in that described more
Crystal silicon layer includes: the polysilicon layer of low doping concentration and the polysilicon layer of high-dopant concentration, the polysilicon of the low doping concentration
Layer is connect with the polysilicon layer interval of the high-dopant concentration.
3. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 2 characterized by comprising
Metal electrode, the metal electrode include: front electrode and rear electrode, and the front electrode connects with described emission layer ohm
Touching.
4. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 3, which is characterized in that the back
The polysilicon layer Ohmic contact of face electrode and high-dopant concentration.
5. it is according to claim 4 selectivity passivation contact structures crystal-silicon solar cell, which is characterized in that it is described just
Face electrode and the rear electrode are in grid linear structure.
6. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 5, which is characterized in that described super
Thin silicon oxide layer with a thickness of 0.1-2nm.
7. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 1, which is characterized in that the P
Type silicon substrate is any one of the P-type silicon matrix that boron doped P-type silicon matrix or gallium adulterate.
8. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 1, which is characterized in that the hair
Penetrate the N that layer is phosphorus doping+Type silicon.
9. the crystal-silicon solar cell of selectivity passivation contact structures according to claim 1, which is characterized in that described the
One passivation layer is silicon nitride layer, and second passivation layer is aluminium oxide and silicon nitride stack.
10. a kind of preparation method of the crystal-silicon solar cell of selectivity passivation contact structures, which is characterized in that including following step
It is rapid:
1) P-type silicon matrix goes cutting damage, positive making herbs into wool, polished backside；
2) the ultra-thin silicon oxide layer of P-type silicon matrix backside deposition；
3) in ultra-thin silicon oxide layer backside deposition amorphous silicon layer, amorphous silicon layer is after heat treatment changed into polysilicon layer；
4) in P-type silicon front side of matrix deposition mask, the exposure mask is silicon nitride, and front is opposite to be stacked, and is put into diffusion furnace tube, more
Boron is expanded at the crystal silicon layer back side, forms the polysilicon layer of high-dopant concentration；
5) single-side acid washes away the Pyrex except the polysilicon layer back side, on polysilicon layer back side screen printable barrier, barrier layer
Figure be Metal contact regions figure；
6) because the boron of diffusion is in polysilicon layer surface concentration highest, inside by surface, doping concentration is gradually decreased, so alkali soluble
Liquid etching, the polysilicon layer of non-covering barrier layer are changed into the polysilicon layer of low doping concentration；
7) barrier layer at the polysilicon layer back side and the exposure mask of P-type silicon front side of matrix are removed；
8) in polysilicon layer backside deposition exposure mask, the exposure mask is silicon nitride, is put into diffusion furnace tube back-to-back, P-type silicon matrix
Phosphorus is expanded in front, forms emission layer；
9) etching edge, and remove the phosphorosilicate glass of P-type silicon front side of matrix and the exposure mask at the polysilicon layer back side；
10) the first passivation layer is deposited in emission layer front, the first passivation layer plays the role of antireflective simultaneously, carries on the back in polysilicon layer
Face deposits the second passivation layer；
11) the positive rear electrode of silk-screen printing, positive electrode print on the emitter, and back electrode is printed on the highly doped dense of polysilicon layer
On the polysilicon layer of degree, metallization is completed in sintering.
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