CN113035969A - TOPCon battery gradient doped amorphous silicon passivation structure and preparation method thereof - Google Patents
TOPCon battery gradient doped amorphous silicon passivation structure and preparation method thereof Download PDFInfo
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- CN113035969A CN113035969A CN202110157023.3A CN202110157023A CN113035969A CN 113035969 A CN113035969 A CN 113035969A CN 202110157023 A CN202110157023 A CN 202110157023A CN 113035969 A CN113035969 A CN 113035969A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 68
- 238000002161 passivation Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 230000005641 tunneling Effects 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000085 borane Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052709 silver Inorganic materials 0.000 abstract description 9
- 239000004332 silver Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 50
- 239000002002 slurry Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention discloses a TOPCon battery gradient doped amorphous silicon passivation structure, wherein at least two layers of doped amorphous silicon thin films are deposited on one side of a tunneling oxide layer of a silicon wafer, and the doping concentration of the multiple layers of doped amorphous silicon thin films is increased in a gradient manner from the side contacting with the tunneling oxide layer. Wherein the thickness of each layer of the doped amorphous silicon thin film is 10-40nm, and the total thickness of the multiple layers of the doped amorphous silicon thin films is 60-80 nm. According to the gradient doped amorphous silicon passivation structure provided by the invention, the doping concentration of the doped amorphous silicon layer is increased in a gradient manner from the innermost layer contacting the tunneling oxide layer to the outermost layer contacting silver paste, and finally the doped amorphous silicon layer with low film thickness and high passivation is obtained, the total thickness is reduced to about 60-80nm from the conventional thickness of more than 100nm, so that the near infrared light loss of the back of a battery caused by doped amorphous silicon is effectively reduced, the light utilization rate is improved, and the coating process cost is reduced.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a TOPCon cell gradient doped amorphous silicon passivation structure and a preparation method thereof.
Background
TOPCon is a tunneling oxide layer passivation contact solar cell technology based on a selective carrier principle, the cell structure is mainly an N-type silicon substrate cell, a layer of ultrathin silicon oxide is prepared on the back surface of the cell, then a layer of phosphorus-doped amorphous silicon film is deposited, and the ultrathin silicon oxide and the phosphorus-doped amorphous silicon film form a passivation contact structure together, wherein the phosphorus-doped amorphous silicon layer provides a good field passivation effect and selectively penetrates through carriers, and plays a vital role in improving the cell current and filling factors. However, the doped amorphous silicon layer absorbs near infrared light, reduces the effective reflection of near infrared light by the back surface of the cell, and causes light loss at the back surface, which is greater when the film is thicker. Therefore, a low-film-thickness phosphorus-doped amorphous silicon layer is undoubtedly the best choice for the back contact passivation structure of the TOPCon cell, considering the combination of cell efficiency and manufacturing cost.
However, the TOPCon cell is limited by the existing back paste, and the thickness of the doped amorphous silicon of the TOPCon cell needs to be more than 100nm to avoid the burn-through phenomenon. During printing and sintering, the auxiliary additive in the silver paste can be contacted with the doped amorphous silicon layer only through high-temperature sintering to lead out current, and the doped amorphous silicon layer with low film thickness is easy to burn through by the paste so as to damage the battery structure and generate electric leakage. Therefore, if the slurry is adjusted, the content of the auxiliary additive in the silver paste is reduced, the burn-through performance of the silver paste is reduced, and meanwhile, the contact resistance is greatly increased, and the power generation performance of the battery is adversely affected.
In summary, the prior art schemes mainly include two types:
1. the conventional back slurry is still used during printing and sintering, in order to avoid the burn-through phenomenon and ensure that the passivation contact structure on the back of the battery is not damaged by the slurry sintering, the thickness of the doped amorphous silicon layer is increased to be more than 100nm, and at the moment, the doped amorphous silicon layer with high film thickness causes the light loss on the back surface of the battery, so that the light utilization efficiency is reduced;
2. the doped amorphous silicon layer with low film thickness is prepared, the back surface main grid slurry with weakened burning-through performance is used for avoiding the burning-through phenomenon, the burning-through performance is weakened by reducing the content of the auxiliary additive in the silver paste, but the contact resistance is greatly increased when the burning-through performance of the slurry is reduced, the FF of the battery is reduced, and the efficiency of the battery is reduced.
Disclosure of Invention
In order to solve the technical problem, the invention provides a TOPCon battery gradient doped amorphous silicon passivation structure, wherein at least two layers of doped amorphous silicon thin films are deposited on one side of a tunneling oxide layer of a silicon wafer, and the doping concentration of the multiple layers of doped amorphous silicon thin films is increased in a gradient manner from the side contacting with the tunneling oxide layer.
Wherein the thickness of each layer of the doped amorphous silicon thin film is 10-40nm, and the total thickness of the multiple layers of the doped amorphous silicon thin films is 60-80 nm.
The invention also provides a preparation method of the TOPCon battery gradient doped amorphous silicon passivation structure, which comprises the following steps:
firstly, depositing a layer of doped amorphous silicon film with low film thickness and low doping concentration on the surface of a tunneling oxide layer by adopting a PECVD (plasma enhanced chemical vapor deposition) in-situ doping or PVD (physical vapor deposition) in-situ doping mode;
and then, repeating the doping deposition process to continuously deposit a plurality of layers of doped amorphous silicon thin films with low film thickness and low doping concentration gradient on the surface of the first layer of doped amorphous silicon thin film with low film thickness and low doping concentration.
Wherein, the doping deposition process adopts phosphine or other phosphorus-containing doping sources; alternatively, a borane or other boron-containing dopant source is employed.
The invention also provides a TOPCon solar cell with the gradient doped amorphous silicon passivation structure.
Through the technical scheme, the invention provides a TOPCon battery gradient doped amorphous silicon passivation structure, the doping concentration of a doped amorphous silicon layer in the structure is increased in a gradient manner from the innermost layer contacting a tunneling oxide layer to the outermost layer contacting silver paste, namely, the bottom layer adopts a low doping process to ensure the TOPCon back contact passivation performance, the outer layer adopts a high doping process to reduce the sheet resistance of a doping layer by improving the phosphorus doping concentration of the doping film of the outer layer, so that the problems of poor sintering contact, higher contact resistance and lower battery efficiency caused by poor penetrability of slurry are solved, and the problem that the doped phosphorus penetrates through the tunneling oxide layer to damage the battery back passivation structure after annealing due to the fact that the phosphorus doping concentration of a single-layer film is directly improved can also be effectively avoided. The method finally obtains the doped amorphous silicon layer with low film thickness and high passivation by using a gradient doping mode, and the total thickness is reduced to about 60-80nm from the conventional thickness of more than 100nm, so that the near infrared light loss on the back of the battery caused by the doped amorphous silicon is effectively reduced, the light utilization rate is improved, the coating process cost is reduced (for example, the consumption of process consumables and gas/electricity consumption are reduced), and an effective path is provided for cost reduction and efficiency improvement of the TOPCon battery.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
Fig. 1 is a schematic cross-sectional structure diagram of a solar cell having a double-layer phosphorus-doped amorphous silicon passivation structure according to an embodiment of the present invention.
In the figure: 10. a silicon wafer; 11. depositing a layer on the front surface; 121. tunneling the oxide layer on the back; 122. the inner layer is doped with amorphous silicon film with low concentration; 123. an outer layer of high-concentration doped amorphous silicon film; 124. silver paste; 13. and an electrode.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1:
referring to fig. 1, in this embodiment 1, a TOPCon cell gradient doped amorphous silicon passivation structure is provided, in which two doped amorphous silicon thin films with gradient increasing doping concentrations are deposited on one side of a tunnel oxide layer 121 of a silicon wafer 10; wherein, the inner low-concentration doped amorphous silicon film 122 adopts phosphine or other phosphorus-containing doping sources, and the doping concentration is 9E +19cm3To 1.5E +20cm3The thickness of the film is 10-40 nm; wherein, the outer layer high-concentration doped amorphous silicon thin film 123 adopts phosphine or other phosphorus-containing doping sources, and the doping concentration is 1.5E +20cm3To 2.5E +20cm3The thickness of the film is 10-40 nm; the total thickness of the two doped amorphous silicon thin films is 60-80 nm.
Example 2:
this embodiment 2 provides a method for preparing a TOPCon battery gradient-doped amorphous silicon passivation structure described in embodiment 1, including the following steps:
firstly, depositing a low-concentration doped amorphous silicon film 122 in the inner layer on the surface of the tunneling oxide layer 121 by adopting a PECVD (plasma enhanced chemical vapor deposition) in-situ doping or PVD (physical vapor deposition) in-situ doping mode and adopting phosphorane or other phosphorus-containing doping sources;
then, the doping deposition process is repeated to deposit the outer highly doped amorphous silicon film 123 on the surface of the inner highly doped amorphous silicon film 122.
Example 3:
referring to fig. 1, this embodiment 3 provides a TOPCon solar cell or other solar cells with similar passivation structure based on the gradient doped amorphous silicon passivation structure described in embodiments 1 and 2, and the cell type is not limited specifically. After the deposition of the inner low-concentration doped amorphous silicon thin film 122 with gradient concentration and the outer high-concentration doped amorphous silicon thin film 123 is sequentially completed, a layer of silver paste 124 is coated on the surface of the outer high-concentration doped amorphous silicon thin film 123 and an electrode 13 is manufactured, and the structure of the front deposition layer 11 of the silicon wafer 10 refers to the prior art.
The invention provides a TOPCon battery gradient doped amorphous silicon passivation structure, wherein the doping concentration of a doped amorphous silicon layer in the structure is increased in a gradient manner from the innermost layer contacting a tunneling oxide layer to the outermost layer contacting silver paste, namely the bottom layer adopts a low doping process to ensure the TOPCon back contact passivation performance, the outer layer adopts a high doping process, and the sheet resistance of a doping layer is reduced by improving the phosphorus doping concentration of an outer layer doped film, so that the problems of poor sintering contact, higher contact resistance and reduced battery efficiency caused by poor slurry penetrability are solved, and the problem that the doped phosphorus penetrates through the tunneling oxide layer to damage the battery back passivation structure after annealing due to the direct improvement of the phosphorus doping concentration of a single layer film can be effectively avoided. The method finally obtains the doped amorphous silicon layer with low film thickness and high passivation by using a gradient doping mode, and the total thickness is reduced to about 60-80nm from the conventional thickness of more than 100nm, so that the near infrared light loss on the back of the battery caused by the doped amorphous silicon is effectively reduced, the light utilization rate is improved, the coating process cost is reduced (for example, the consumption of process consumables and gas/electricity consumption are reduced), and an effective path is provided for cost reduction and efficiency improvement of the TOPCon battery.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to the above-described embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A TOPCon battery gradient doped amorphous silicon passivation structure is characterized in that at least two layers of doped amorphous silicon thin films are deposited on one side of a tunneling oxide layer of a silicon wafer, and the doping concentration of the multiple layers of doped amorphous silicon thin films is increased in a gradient manner from the side contacting with the tunneling oxide layer.
2. The TOPCon battery gradient doped amorphous silicon passivation structure of claim 1, wherein the thickness of each doped amorphous silicon thin film is 10-40nm, and the total thickness of the doped amorphous silicon thin films is 60-80 nm.
3. A preparation method of a TOPCon battery gradient doped amorphous silicon passivation structure is characterized by comprising the following steps:
firstly, depositing a layer of low-film-thickness low-doping-concentration doped amorphous silicon film on the surface of a tunneling oxide layer;
and then, repeating the doping deposition process to continuously deposit a plurality of layers of doped amorphous silicon thin films with low film thickness and low doping concentration gradient on the surface of the first layer of doped amorphous silicon thin film with low film thickness and low doping concentration.
4. The method as claimed in claim 3, wherein phosphine or other phosphorus-containing dopant is used in the dopant deposition process.
5. The method as claimed in claim 3, wherein the doping deposition process employs borane or other boron-containing dopant source.
6. A topocon solar cell comprising a graded doped amorphous silicon passivation structure according to any of claims 1 to 5.
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| CN202110157023.3A CN113035969A (en) | 2021-02-04 | 2021-02-04 | TOPCon battery gradient doped amorphous silicon passivation structure and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555469A (en) * | 2021-07-21 | 2021-10-26 | 苏州腾晖光伏技术有限公司 | Back passivation contact structure, preparation method thereof and solar cell |
| CN113903833A (en) * | 2021-09-01 | 2022-01-07 | 普乐新能源科技(徐州)有限公司 | TOPCon battery LPCVD (low pressure chemical vapor deposition) process |
| CN114122154A (en) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | Carrier selective passivation contact solar cell and preparation method thereof |
| CN114267753A (en) * | 2022-02-28 | 2022-04-01 | 海宁正泰新能源科技有限公司 | TOPCon solar cell, preparation method thereof and photovoltaic module |
| CN115148857A (en) * | 2022-07-14 | 2022-10-04 | 上饶捷泰新能源科技有限公司 | TOPCon battery and manufacturing method thereof |
| GB2611203A (en) * | 2022-06-01 | 2023-03-29 | Jinko Solar Haining Co Lts | Photovoltaic cell and photovoltaic module |
| WO2023092977A1 (en) * | 2021-11-26 | 2023-06-01 | 通威太阳能(眉山)有限公司 | Method for preparing tunnel oxide layer and amorphous silicon thin film, and topcon cell |
| CN117594669A (en) * | 2024-01-19 | 2024-02-23 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof, laminated cell and photovoltaic module |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555469A (en) * | 2021-07-21 | 2021-10-26 | 苏州腾晖光伏技术有限公司 | Back passivation contact structure, preparation method thereof and solar cell |
| CN113555469B (en) * | 2021-07-21 | 2024-05-10 | 苏州腾晖光伏技术有限公司 | Back passivation contact structure, preparation method thereof and solar cell |
| CN113903833A (en) * | 2021-09-01 | 2022-01-07 | 普乐新能源科技(徐州)有限公司 | TOPCon battery LPCVD (low pressure chemical vapor deposition) process |
| CN114122154A (en) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | Carrier selective passivation contact solar cell and preparation method thereof |
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| WO2023092977A1 (en) * | 2021-11-26 | 2023-06-01 | 通威太阳能(眉山)有限公司 | Method for preparing tunnel oxide layer and amorphous silicon thin film, and topcon cell |
| CN114267753A (en) * | 2022-02-28 | 2022-04-01 | 海宁正泰新能源科技有限公司 | TOPCon solar cell, preparation method thereof and photovoltaic module |
| GB2611203A (en) * | 2022-06-01 | 2023-03-29 | Jinko Solar Haining Co Lts | Photovoltaic cell and photovoltaic module |
| GB2611203B (en) * | 2022-06-01 | 2023-09-27 | Jinko Solar Haining Co Ltd | Photovoltaic cell and photovoltaic module |
| CN115148857A (en) * | 2022-07-14 | 2022-10-04 | 上饶捷泰新能源科技有限公司 | TOPCon battery and manufacturing method thereof |
| CN117594669A (en) * | 2024-01-19 | 2024-02-23 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof, laminated cell and photovoltaic module |
| CN117594669B (en) * | 2024-01-19 | 2024-05-17 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof, laminated cell and photovoltaic module |
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