CN216084899U - Solar cell applying phase change heat storage to new energy - Google Patents

Abstract

The utility model discloses a solar cell applying phase change heat storage for new energy, and particularly relates to the technical field of solar cells. According to the solar cell applying phase change heat storage as new energy, the antireflection film is plated on the upper surface of the cell body, so that light projection is increased, the light utilization rate of the solar cell can be effectively improved, and the phase change heat storage plate is arranged, so that the phase change heat storage plate is efficient and energy-saving, and the photoelectric conversion rate can be effectively enhanced.

Description

Solar cell applying phase change heat storage to new energy

Technical Field

The utility model relates to the technical field of solar cells, in particular to a solar cell applying phase change heat storage to new energy.

Background

The rapid development of economy brings global energy crisis, environmental pollution and other problems, and the development of renewable energy and clean energy is urgent. In recent years, as a new energy source, solar energy has gradually replaced fossil energy with the advantages of low price, rich content, easy obtainment, no pollution and the like, the utilization of the solar energy as the energy source is mainly reflected in the utilization of the solar energy for power generation, and the existing solar cell has low conversion rate and weak light absorption capacity.

In order to overcome the defects in the prior art, the utility model aims to provide a solar cell with high conversion efficiency and strong light absorption capacity.

SUMMERY OF THE UTILITY MODEL

The utility model mainly aims to provide a solar cell applying phase change heat storage as new energy, which can effectively solve the problems in the background technology.

In order to achieve the purpose, the utility model adopts the technical scheme that:

the utility model provides a solar cell of phase transition heat accumulation is used to new forms of energy, includes battery body, front electrode and back electrode, back electrode upper surface is provided with the photoelectric conversion layer, the photoelectric conversion layer is including meeting plain noodles and shady plain noodles, it is provided with phase transition heat accumulation board to meet the plain noodles surface, phase transition heat accumulation board surface is provided with the buffer layer, the buffer layer includes first buffer layer and second buffer layer, the buffer layer upper surface is provided with transparent conductive film, antireflection coating has been plated to the battery body upper surface, be provided with the passivation layer between antireflection coating and the transparent conductive film, front electrode sets up the upper surface at the battery body who plates antireflection coating.

Preferably, the antireflection film comprises a silicon nitride layer and a silicon oxycarbide layer, and the antireflection film is the silicon nitride layer and the silicon oxycarbide layer from top to bottom in sequence.

Preferably, the thickness of the silicon nitride layer is 50nm-70nm, and the thickness of the silicon oxycarbide layer is 10nm-30 nm.

Preferably, the thickness of the buffer layer is 30nm-50nm, the thickness of the first buffer layer is 20nm-30nm, and the thickness of the second buffer layer is 10nm-20 nm.

Preferably, the first buffer layer and the second buffer layer comprise zinc sulfide doped with oxygen, and the second buffer layer has an S content higher than that of the first buffer layer.

Preferably, the photoelectric conversion layer comprises a P-type silicon semiconductor layer and an N-type silicon semiconductor layer, the N-type silicon semiconductor layer is stacked on the P-type silicon semiconductor layer, the light-facing surface and the backlight surface are opposite to each other, and a PN junction is formed between the P-type silicon semiconductor layer and the N-type silicon semiconductor layer.

Preferably, the phase change heat storage plate comprises a graphene aerogel framework structure, paraffin is filled in the graphene aerogel framework structure, and carbon nano tubes are attached to the upper surface of the graphene aerogel framework structure.

Compared with the prior art, the utility model has the following beneficial effects:

1. the utility model discloses a solar cell applying phase change heat storage as new energy, which increases light projection and can effectively improve the light utilization rate of the solar cell by plating an antireflection film on the upper surface of a cell body.

2. The potential induced attenuation effect seriously influences the service life and the performance of the solar cell, and the potential induced attenuation effect can be effectively reduced by arranging the passivation layer.

3. Through setting up the phase change heat accumulation board, the phase change heat accumulation board is energy-efficient, can strengthen photoelectric conversion effectively.

Drawings

Fig. 1 is a schematic view of the overall structure of a solar cell using phase change thermal storage according to a new energy source of the present invention;

fig. 2 is a schematic structural diagram of a solar cell antireflection film using phase change thermal storage according to a new energy source of the present invention;

FIG. 3 is a schematic structural diagram of a solar cell strand photoelectric conversion layer applying phase change thermal storage for new energy according to the present invention;

fig. 4 is a schematic structural diagram of a buffer layer of a solar cell using phase change thermal storage as a new energy source according to the present invention:

fig. 5 is a schematic structural diagram of a phase change heat storage plate of a solar cell using phase change heat storage as a new energy source according to the present invention.

In the figure: 1. a front electrode; 2. an antireflection film; 3. a passivation layer; 4. a buffer layer; 5. a phase change heat storage plate; 6. a photoelectric conversion layer; 7. a back electrode; 8. a battery body; 9. a transparent conductive film; 21. a silicon nitride layer; 22. a silicon oxycarbide layer; 41. a first buffer layer; 42. a second buffer layer; 51. paraffin wax; 52. a carbon nanotube; 53. a graphene aerogel framework structure; 61. a light-facing surface; 62. an N-type silicon semiconductor layer; 63. a PN junction; 64. a P-type silicon semiconductor layer; 65. a backlight surface.

Detailed Description

In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the utility model easy to understand, the utility model is further described with the specific embodiments.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

As shown in fig. 1 to 5, a solar cell using phase change heat storage as a new energy source includes a cell body 8, a front electrode 1 and a back electrode 7, a photoelectric conversion layer 6 is disposed on an upper surface of the back electrode 7, the photoelectric conversion layer 6 includes a light facing surface 61 and a light facing surface 65, the light facing surface 61 is provided with a phase change heat storage plate 5, the phase change heat storage plate 5 is provided with a buffer layer 4, the buffer layer 4 includes a first buffer layer 41 and a second buffer layer 42, a transparent conductive film 9 is disposed on an upper surface of the buffer layer 4, an antireflection film 2 is plated on an upper surface of the cell body 8, a passivation layer 3 is disposed between the antireflection film 2 and the transparent conductive film 9, and the front electrode 1 is disposed on the upper surface of the cell body 8 plated with the antireflection film 2.

As shown in fig. 2, the antireflection film 2 includes a silicon nitride layer 21 and a silicon oxycarbide layer 22, and the antireflection film 2 is composed of the silicon nitride layer 21 and the silicon oxycarbide layer 22 in this order from top to bottom; the thickness of the silicon nitride layer 21 is 50nm-70nm, and the thickness of the silicon oxycarbide layer 22 is 10nm-30 nm; and the antireflection film 2 is deposited on the surface of the cell body 8, so that the absorption of solar rays by the cell is increased.

As shown in fig. 3, the photoelectric conversion layer 6 includes a P-type silicon semiconductor layer 64 and an N-type silicon semiconductor layer 62, the N-type silicon semiconductor layer 62 is stacked on the P-type silicon semiconductor layer 64, the light-facing surface 61 and the backlight surface 65 are opposite to each other, and a PN junction 63 is formed between the P-type silicon semiconductor layer 64 and the N-type silicon semiconductor layer 62; a light-facing surface 61 and a backlight surface 65 are provided opposite to each other, in which the light-facing surface 61 faces light to be absorbed, sunlight is incident from the light-facing surface 61 to the photoelectric conversion layer 6, and the backlight surface 65 faces away from the light, so that no light is incident from the backlight surface 65. Doping a material semiconductor having a conductivity between a conductor and an insulator with a specific impurity can support a P-type semiconductor and an N-type semiconductor; the method is characterized in that trivalent element boron is doped into intrinsic semiconductor silicon, boron atoms replace the positions of some silicon atoms in silicon crystals, after the trivalent electron of boron is doped, the trivalent electron of boron and the valent electrons of three adjacent silicon atoms form covalent bonds respectively, so that the fourth covalent bond is necessarily lack of one electron and a hole is left, the hole excited by the doped boron greatly exceeds the electron-hole pair in the intrinsic semiconductor, the total number of the holes is greatly increased, and the conductivity of the semiconductor is greatly increased, and the semiconductor is a P-type silicon semiconductor. The intrinsic semiconductor silicon is doped with trace pentavalent element phosphorus, and as the valence electrons of phosphorus have 5 valence electrons, the doped tetravalent electrons respectively form 4 covalent bonds with the valence electrons of four adjacent silicon atoms, and an excess electron is also formed, the electron becomes a free electron, and the free electron provided by the phosphorus element greatly exceeds the original intrinsic electron hole pair, so that an N-type silicon semiconductor is formed. Different doping processes are adopted, and a P-type semiconductor and an N-type semiconductor are manufactured on the same semiconductor (usually silicon or germanium) substrate through diffusion, and a space charge region called a PN junction 63 (English) is formed at the interface of the P-type semiconductor and the N-type semiconductor. The PN junction 63 has one-way conductivity, which is a characteristic utilized by many devices in the electronic technology, and light irradiates the surface of the PN junction 63 to generate electron-hole pairs, and electrons move to the electrodes under the action of an electric field, so that the battery generates electric energy.

As shown in fig. 4, the buffer layer 4 includes a first buffer layer 41 and a second buffer layer 42; the thickness of the buffer layer 4 is 30nm-50nm, the thickness of the first buffer layer 41 is 20nm-30nm, and the thickness of the second buffer layer 42 is 10nm-20 nm; the first buffer layer 41 and the second buffer layer 42 contain zinc sulfide, and the second buffer layer 42 has a higher S content than the first buffer layer 41; in the case where the first buffer layer 41 and the second buffer layer 42 are out of the set range and the range of thickness of sulfur, the difference between their resistivities may not be equal to or greater than an expected value. The resistivity of the buffer layer 4 may be increased with an increase in the sulfur content, the formation of a high resistance layer, which is often disposed on the buffer layer 4, may be omitted, and a high resistance buffer layer, which functions as an insulator, is often further disposed on the buffer layer 4 after the buffer layer 4 is formed, however, the solar cell according to the embodiment may increase the sulfur content to increase the resistivity when the second buffer layer 42 is formed, thereby enabling the second buffer layer 42 to replace the high resistance buffer layer, which is often used. Accordingly, since a process of forming the high-resistance buffer layer can be omitted, process efficiency can be enhanced due to a reduction in process time, and in addition, the solar cell according to the embodiment may adjust the sulfur content when forming the buffer layer 4 to form the first buffer layer 41 having less sulfur, i.e., smaller resistivity, and then form the second buffer layer 42 having more sulfur, larger resistivity, so that the resistivity in the buffer layer 4 can be controlled, and thus, the series resistance of the solar cell can be reduced as a whole, and thus, the solar cell according to the embodiment may enhance process efficiency and enhance the overall efficiency of the solar cell.

As shown in fig. 5, the phase-change heat storage plate 5 includes a graphene aerogel framework structure 53, paraffin 51 is filled in the graphene aerogel framework structure 53, and carbon nanotubes 52 are attached to the upper surface of the graphene aerogel framework structure 53 (CN 108439373A); through setting up phase change heat accumulation board 5, phase change heat accumulation board 5 is energy-efficient, can strengthen photoelectric conversion effectively.

The working principle of the utility model is as follows: the antireflection film 2 is deposited on the surface of the cell body 8, the absorption of the cell to solar rays is increased, the light facing surface 61 and the backlight surface 65 are opposite to each other, wherein the light facing surface 61 faces the light to be absorbed, sunlight enters the photoelectric conversion layer 6 from the light facing surface 61, the backlight surface 65 faces away from the light, so that no light enters from the backlight surface 65, a PN junction 63 is formed between the P-type silicon semiconductor layer 64 and the N-type silicon semiconductor layer 62, the light irradiates the surface of the PN junction 63 to generate electron hole pairs, electrons move towards the electrode under the action of an electric field, so that the cell generates electric energy, the service life and the performance of the solar cell are seriously influenced by the potential induced attenuation effect, the potential induced attenuation effect can be effectively reduced by arranging the passivation layer 3, the series resistance Rs of the solar cell can be totally reduced by the arranged buffer layer 4, so that the solar cell can enhance the process efficiency and the overall efficiency of the solar cell, through setting up phase change heat accumulation board 5 again, the graphite alkene aerogel plays a skeleton texture's effect, can pack phase change material paraffin 51 into wherein, provides more passageways simultaneously for thermal transmission, and carbon nanotube 52 adheres to and has played the effect on extension heat transfer surface on graphite alkene aerogel skeleton texture 53 surface to further promote combined material coefficient of heat conductivity, can strengthen photoelectric conversion rate effectively.

The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.

Claims (6)

1. The utility model provides a solar cell of new forms of energy applied phase change heat accumulation, includes cell body (8), front electrode (1) and back electrode (7), its characterized in that: back electrode (7) upper surface is provided with photoelectric conversion layer (6), photoelectric conversion layer (6) are including meeting plain noodles (61) and shady face (65), it is provided with phase change heat accumulation board (5) to meet plain noodles (61) surface, phase change heat accumulation board (5) surface is provided with buffer layer (4), buffer layer (4) are including first buffer layer (41) and second buffer layer (42), buffer layer (4) upper surface is provided with transparent conductive film (9), antireflection coating (2) have been plated to battery body (8) upper surface, be provided with passivation layer (3) between antireflection coating (2) and transparent conductive film (9), front electrode (1) sets up the upper surface at battery body (8) of plating antireflection coating (2).

2. The solar cell for storing heat by applying phase change of new energy according to claim 1, wherein: the antireflection film (2) comprises a silicon nitride layer (21) and a silicon oxycarbide layer (22), and the antireflection film (2) is the silicon nitride layer (21) and the silicon oxycarbide layer (22) from top to bottom in sequence.

3. The solar cell for storing new energy by phase change heat according to claim 2, wherein: the thickness of the silicon nitride layer (21) is 50nm-70nm, and the thickness of the silicon oxycarbide layer (22) is 10nm-30 nm.

4. The solar cell for storing heat by applying phase change of new energy according to claim 1, wherein: the thickness of the buffer layer (4) is 30nm-50nm, the thickness of the first buffer layer (41) is 20nm-30nm, and the thickness of the second buffer layer (42) is 10nm-20 nm.

5. The solar cell for storing heat by applying phase change of new energy according to claim 1, wherein: the photoelectric conversion layer (6) comprises a P-type silicon semiconductor layer (64) and an N-type silicon semiconductor layer (62), the N-type silicon semiconductor layer (62) is stacked on the P-type silicon semiconductor layer (64), the light facing surface (61) and the backlight surface (65) are opposite to each other, and a PN junction (63) is formed between the P-type silicon semiconductor layer (64) and the N-type silicon semiconductor layer.

6. The solar cell for storing heat by applying phase change of new energy according to claim 1, wherein: phase change heat accumulation board (5) are including graphite alkene aerogel skeleton texture (53), graphite alkene aerogel skeleton texture (53) inside packing has paraffin (51), graphite alkene aerogel skeleton texture (53) upper surface is attached to have carbon nanotube (52).

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