CN209658188U

CN209658188U - A kind of single polycrystalline p-type single side TOPCON battery with transparency conducting layer

Info

Publication number: CN209658188U
Application number: CN201920488017.4U
Authority: CN
Inventors: 张勇; 李国庆; 王晨光
Original assignee: SHENZHEN S C NEW ENERGY EQUIPMENT CO Ltd
Current assignee: SHENZHEN S C NEW ENERGY EQUIPMENT CO Ltd
Priority date: 2019-04-11
Filing date: 2019-04-11
Publication date: 2019-11-19
Anticipated expiration: 2029-04-11

Abstract

The utility model discloses a kind of single polycrystalline p-type single side TOPCON battery with transparency conducting layer, including P type substrate (1), the upper surface of described P type substrate is sequentially stacked n type diffused layer (2), silicon dioxide layer (3), positive metal electrode (5) and transparency conducting layer (4) from lower to upper, is sequentially stacked ultra-thin tunnelling silicon dioxide layer (6), boron doping P-type silicon thin layer (7), back electric field layer (8) and back metal electrode (9) below the P type substrate from top to bottom；The positive metal electrode connects external loading with back metal electrode；It is improved by the light receiving rate that the transparency conducting layer on p-type list polysilicon chip makes cell piece receive sunlight, while its conductive characteristic is good, series resistance can also be reduced, and then improve the short circuit current and fill factor of the solar battery of the utility model；By the specific size and material of each section in optimization solar battery, so that the photoelectric conversion efficiency of the solar battery of the utility model is optimal.

Description

A kind of single polycrystalline p-type single side TOPCON battery with transparency conducting layer

Technical field

The utility model relates to technical field of solar batteries, more particularly to a kind of single polycrystalline with transparency conducting layer P-type single side TOPCON battery.

Background technique

Since first piece of solar battery is since AT&T Labs is born, silicon solar cell has obtained extensive research Development and practical application, especially crystal silicon solar energy battery, with the continuous development of science and technology, crystal silicon solar electricity The photoelectric conversion efficiency in pond is constantly promoted, and production cost is also continuing to decline.Currently, crystal silicon solar energy battery accounts for solar-electricity 80 or more the percent of pond overall global market, the producing line photoelectric conversion efficiency of crystal silicon solar cell sheet has also been dashed forward at present Broken 22%, it is also constantly being reduced with the cost difference of traditional thermal power generation, is being expected to maintain an equal level with the cost of thermal power generation in the coming years. Crystal silicon solar energy battery as a kind of cleanliness without any pollution energy restructure the use of energy, reduce environmental pollution, realize it is sustainable The important function of development etc. increasingly shows.It is different by the doping type of substrate, crystal silicon solar energy battery can be divided into P Type crystal silicon solar and N-type crystalline silicon solar battery.But that there are photoelectric conversion efficiencies is relatively low for existing solar battery How defect changes the structure of crystal silicon solar energy battery, and to further increase its photoelectric conversion efficiency, this is that industry needs to solve Certainly the technical issues of.

Utility model content

In order to solve drawbacks described above existing in the prior art, the utility model proposes a kind of lists with transparency conducting layer Polycrystalline p-type single side TOPCON battery.

The technical solution adopted in the utility model is to design a kind of single polycrystalline p-type single side TOPCON with transparency conducting layer Battery, including P type substrate, the upper surface of described P type substrate are sequentially stacked n type diffused layer, silicon dioxide layer, positive metal from lower to upper Electrode and transparency conducting layer are sequentially stacked ultra-thin tunnelling silicon dioxide layer, boron doping P below the P type substrate from top to bottom Type silicon thin layer, back electric field layer and back metal electrode；The positive metal electrode connects external loading with back metal electrode.

Positive electricity extraction pole is set above the transparency conducting layer；The positive metal electrode and positive electricity extraction pole all use grid Shape, and the positive metal electrode is identical with the feature size shape of positive electricity extraction pole and consistent in the overlapping of plummet direction.

Connectivity slot is equipped between the positive metal electrode and n type diffused layer, the connectivity slot runs through the silicon dioxide layer, Positive metal electrode is adjacent to n type diffused layer upper surface by connectivity slot.

Multiple through-holes are equipped between the back electric field layer and P type substrate, the through-hole runs through the ultra-thin tunnelling titanium dioxide Silicon layer and boron doping P-type silicon thin layer, back electric field layer can contradict the lower surface of the P type substrate by the through-hole.

The transparency conducting layer uses Indium-tin Oxide Transparent Conductive Film or tungsten oxide tin transparent conductive film.

The P type substrate with a thickness of 150 to 300 microns, reflectivity 5% to 25%.

The silicon dioxide layer with a thickness of 1 to 10 nanometer.

The ultra-thin tunnelling silicon dioxide layer with a thickness of 1 to 30 nanometer.

The P type substrate uses p type single crystal silicon piece or p-type polysilicon piece.

The beneficial effect of technical solution provided by the utility model is:

Solar battery disclosed by the utility model makes cell piece by the transparency conducting layer on p-type list polysilicon chip The light receiving rate for receiving sunlight improves, while its conductive characteristic is good, can also reduce series resistance, and then improve the utility model Solar battery short circuit current and fill factor；Pass through the specific size and material of each section in optimization solar battery Matter, so that the photoelectric conversion efficiency of the solar battery of the utility model is optimal；The manufacturing method of the utility model simultaneously It is simple and easy and compatible with existing preparation process, it is convenient for industrialized production.

Detailed description of the invention

The utility model is described in detail below with reference to embodiment and attached drawing, in which:

Fig. 1 is p-type single side TOPCON battery structure；

Fig. 2 is the battery structure of positively charged extraction pole；

Fig. 3 is the battery structure with connectivity slot and through-hole；

Fig. 4 is the battery structure with connectivity slot and through-hole and positive electricity extraction pole.

Specific embodiment

In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation Example, is described in further detail the utility model.It should be appreciated that specific embodiment described herein is used only for explaining this Utility model is not used to limit the utility model.

The utility model discloses a kind of single polycrystalline p-type single side TOPCON battery with transparency conducting layer, is retouched for convenience The concept stating introducing or more, just carrying on the back, to illustrate the relative positional relationship at each position, the vocabulary up and down, just carried on the back is not used in restriction skill Art content.

Referring to embodiment shown in fig. 1, single polycrystalline p-type single side TOPCON battery with transparency conducting layer includes p-type lining Bottom 1, the upper surface of described P type substrate are sequentially stacked n type diffused layer 2, silicon dioxide layer 3, positive metal electrode 5 and transparent from lower to upper Conductive layer 4 is sequentially stacked ultra-thin tunnelling silicon dioxide layer 6, boron doping P-type silicon thin layer below the P type substrate from top to bottom 7, electric field layer 8 and back metal electrode 9 are carried on the back；The positive metal electrode connects external loading with back metal electrode.When light passes through thoroughly When bright conductive layer 4 is irradiated in pn-junction, electromotive force, positive metal are generated in P type substrate and n type diffused layer by photovoltaic effect Electrode connects external load with back metal electrode, to power to external load.

Referring to Fig. 2 shows one embodiment, positive electricity extraction pole 10, the positive electricity are set above the transparency conducting layer 4 Extraction pole connects external loading；The positive metal electrode 5 and positive electricity extraction pole 10 all use lattice-shaped, and the positive metal electricity Pole is identical with the feature size shape of positive electricity extraction pole and consistent in the overlapping of plummet direction.This embodiment during the preparation process, Positive metal electrode is first prepared in silicon dioxide layer, then transparency conducting layer is set.Since positive metal electrode uses lattice-shaped, so Transparency conducting layer is partially much directly to contact with silicon dioxide layer.The transparency conducting layer has good translucency and leads Electrically, the light receiving rate for making cell piece receive sunlight improves, and can reduce series resistance, and then improves the sun of the utility model The short circuit current and fill factor of energy battery.Prepare positive electricity extraction pole 10, positive metal electrode 5 and positive electricity again over transparent conductive layer Extraction pole 10 is consistent in the overlapping of plummet direction, can allow the passing through of light as much as possible, and improves light receiving rate.This embodiment is just golden Belong to electrode in inside battery, so connecting external loading with back metal electrode by positive electricity extraction pole 10.

In the embodiment shown in Fig. 3 or Fig. 4, connectivity slot 12 is equipped between the positive metal electrode 5 and n type diffused layer 2, The connectivity slot runs through the silicon dioxide layer 3, and positive metal electrode is adjacent to n type diffused layer upper surface by connectivity slot.These connect Through slot is when firing positive metal electrode 5, and the positive metal electrode 5 of metal material runs through silica under the action of high temperature What layer was formed.Connectivity slot is conducive to positive metal electrode collected current.

In the embodiment shown in Fig. 3 or Fig. 4, multiple through-holes 11, institute are equipped between the back electric field layer 8 and P type substrate 1 Through-hole is stated through the ultra-thin tunnelling silicon dioxide layer 6 and boron doping P-type silicon thin layer 7, back electric field layer can pass through the through-hole Contradict the lower surface of the P type substrate.This embodiment is to prepare ultra-thin tunnelling silicon dioxide layer 6 and boron doping P-type silicon is thin After layer 7, hole is opened on these layers, through-hole is held successfully and lays back electric field layer 6 again later.This structure is first is that can make to carry on the back electric field layer 6 is relatively firm, second is that facilitating back 8 collected current of electric field layer.

In the preferred embodiment, the transparency conducting layer 4 uses Indium-tin Oxide Transparent Conductive Film (ITO) or tungsten oxide tin Transparent conductive film (IWO).Both materials have preferable high light transmittance and electric conductivity.

In the preferred embodiment, the P type substrate 1 with a thickness of 150 to 300 microns, reflectivity 5% to 25%.

In the preferred embodiment, the silicon dioxide layer 3 with a thickness of 1 to 10 nanometer.

In the preferred embodiment, the ultra-thin tunnelling silicon dioxide layer 6 with a thickness of 1 to 30 nanometer.

In the preferred embodiment, the P type substrate 1 uses p type single crystal silicon piece or p-type polysilicon piece.

The above is preferred embodiments of the present invention, non-to provide constraints.It should be pointed out that being led for this technology For the those of ordinary skill in domain, without departing from the principle of this utility model, several improvements and modifications can also be made, These improvements and modifications are also considered as the protection scope of the utility model.

Claims

1. a kind of single polycrystalline p-type single side TOPCON battery with transparency conducting layer, including P type substrate (1), it is characterised in that: The upper surface of described P type substrate be sequentially stacked from lower to upper n type diffused layer (2), silicon dioxide layer (3), positive metal electrode (5) and thoroughly Bright conductive layer (4) is sequentially stacked ultra-thin tunnelling silicon dioxide layer (6), boron doping p-type below the P type substrate from top to bottom Silicon thin layer (7), back electric field layer (8) and back metal electrode (9)；The positive metal electrode connects external loading with back metal electrode.

2. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: on the transparency conducting layer (4) Side's setting positive electricity extraction pole (10)；The positive metal electrode (5) and positive electricity extraction pole (10) all use lattice-shaped, and it is described just Metal electrode is identical with the feature size shape of positive electricity extraction pole and consistent in the overlapping of plummet direction.

3. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the positive metal electrode (5) and Connectivity slot (12) are equipped between n type diffused layer (2), the connectivity slot runs through the silicon dioxide layer (3), and positive metal electrode passes through Connectivity slot is adjacent to n type diffused layer upper surface.

4. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the back electric field layer (8) and P Multiple through-holes (11) are equipped between type substrate (1), the through-hole runs through the ultra-thin tunnelling silicon dioxide layer (6) and boron doping P Type silicon thin layer (7), back electric field layer can contradict the lower surface of the P type substrate by the through-hole.

5. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the transparency conducting layer (4) is adopted With Indium-tin Oxide Transparent Conductive Film or tungsten oxide tin transparent conductive film.

6. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the thickness of the P type substrate (1) Degree is 150 to 300 microns, reflectivity 5% to 25%.

7. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the silicon dioxide layer (3) With a thickness of 1 to 10 nanometer.

8. list polycrystalline p-type single side TOPCON battery as described in claim 1, it is characterised in that: the ultra-thin tunnelling titanium dioxide Silicon layer (6) with a thickness of 1 to 30 nanometer.

9. list polycrystalline p-type single side TOPCON battery as claimed in any one of claims 1 to 8, it is characterised in that: the p-type lining Bottom (1) uses p type single crystal silicon piece or p-type polysilicon piece.