CN209658189U

CN209658189U - A kind of single polycrystalline p-type single side PERC battery with transparency conducting layer

Info

Publication number: CN209658189U
Application number: CN201920488024.4U
Authority: CN
Inventors: 张勇; 李国庆; 王晨光
Original assignee: SHENZHEN S C NEW ENERGY EQUIPMENT CO Ltd
Current assignee: SHENZHEN S C NEW ENERGY EQUIPMENT CO Ltd
Priority date: 2019-04-11
Filing date: 2019-04-11
Publication date: 2019-11-19
Anticipated expiration: 2029-04-11

Abstract

The utility model discloses a kind of single polycrystalline p-type single side PERC battery with transparency conducting layer, including P type substrate (1), the upper surface of described P type substrate be sequentially stacked from lower to upper n type diffused layer (2), silicon dioxide layer (3) and with positive metal electrode；Passivation layer (4), silicon nitride layer (5), back electric field layer (6) and back metal electrode (7) are sequentially stacked below the P type substrate from top to bottom；Transparency conducting layer in the utility model improves the light receiving rate of cell piece, while its conductive characteristic is good, can also reduce series resistance, and then improve the short circuit current and fill factor of the solar battery of the utility model；By the specific size and material of each section in optimization solar battery, so that the photoelectric conversion efficiency of the solar battery of the utility model is optimal；The manufacturing method of the utility model is simple and easy and compatible with existing preparation process simultaneously, is convenient for industrialized production.

Description

A kind of single polycrystalline p-type single side PERC battery with transparency conducting layer

Technical field

The utility model relates to technical field of solar batteries, more particularly to a kind of single polycrystalline with transparency conducting layer P-type single side PERC battery.

Background technique

Since first piece of solar battery is since AT&T Labs is born, silicon solar cell has obtained extensive research Development and practical application, especially crystal silicon solar energy battery, with the continuous development of science and technology, crystal silicon solar electricity The photoelectric conversion efficiency in pond is constantly promoted, and production cost is also continuing to decline.Currently, crystal silicon solar energy battery accounts for solar-electricity 80 or more the percent of pond overall global market, the producing line photoelectric conversion efficiency of crystal silicon solar cell sheet has also been dashed forward at present Broken 22%, it is also constantly being reduced with the cost difference of traditional thermal power generation, is being expected to maintain an equal level with the cost of thermal power generation in the coming years. Crystal silicon solar energy battery as a kind of cleanliness without any pollution energy restructure the use of energy, reduce environmental pollution, realize it is sustainable The important function of development etc. increasingly shows.It is different by the doping type of substrate, crystal silicon solar energy battery can be divided into N Type crystal silicon solar and P-type crystal silicon solar battery.But that there are photoelectric conversion efficiencies is relatively low for existing solar battery How defect changes the structure of crystal silicon solar energy battery, and to further increase its photoelectric conversion efficiency, this is that industry needs to solve Certainly the technical issues of.

Utility model content

In order to solve drawbacks described above existing in the prior art, the utility model proposes a kind of lists with transparency conducting layer Polycrystalline p-type single side PERC battery.

The technical solution adopted in the utility model is a kind of single polycrystalline p-type single side PERC battery with transparency conducting layer, Including P type substrate, the upper surface of described P type substrate is sequentially stacked n type diffused layer, silicon dioxide layer and positive metal electricity from lower to upper Pole；Passivation layer, silicon nitride layer, back electric field layer and back metal electrode are sequentially stacked below the P type substrate from top to bottom.

Layer of transparent conductive layer is covered above the positive metal electrode.

Layer of transparent conductive layer is equipped between the positive metal electrode and silicon dioxide layer.

Layer of transparent conductive layer, the transparency conducting layer and dioxy are equipped between the positive metal electrode and silicon dioxide layer Positive electricity guidance pole is clipped between SiClx layer.

The positive electricity guidance pole and positive metal electrode all use lattice-shaped, and positive electricity guidance pole and positive metal electrode Feature size shape it is identical and consistent in the overlapping of plummet direction.

One layer of passivation layer is equipped between the n type diffused layer and silicon dioxide layer.

The stacked passivation layer and silicon nitride layer are equipped with multiple perforative through-holes, and the back electric field layer can pass through institute State the lower surface that through-hole contradicts the P type substrate 1.

The P type substrate uses p type single crystal silicon piece or p-type polysilicon piece；The passivation layer uses alumina layer or nitrogen oxygen SiClx layer or the simultaneous doped layer of aluminium oxide and silicon oxynitride.

Connectivity slot is equipped between the positive metal electrode and n type diffused layer, the connectivity slot runs through the silicon dioxide layer.

The transparency conducting layer uses Indium-tin Oxide Transparent Conductive Film or tungsten oxide tin transparent conductive film.

The beneficial effect of technical solution provided by the utility model is:

Solar battery disclosed by the utility model makes cell piece by the transparency conducting layer on p-type list polysilicon chip The light receiving rate for receiving sunlight improves, while its conductive characteristic is good, can also reduce series resistance, and then improve the utility model Solar battery short circuit current and fill factor；Pass through the specific size and material of each section in optimization solar battery Matter, so that the photoelectric conversion efficiency of the solar battery of the utility model is optimal；The manufacturing method of the utility model simultaneously It is simple and easy and compatible with existing preparation process, it is convenient for industrialized production.

Detailed description of the invention

The utility model is described in detail below with reference to embodiment and attached drawing, in which:

Fig. 1 is the battery structure figure that transparency conducting layer and positive metal electrode are stacked up and down；

Fig. 2 is the battery structure figure that positive metal electrode and transparency conducting layer are stacked up and down；

Fig. 3 is the battery structure figure that passivation layer is equipped between n type diffused layer and silicon dioxide layer；

Fig. 4 is the battery structure figure that positive metal electrode, transparency conducting layer and positive electricity guidance are extremely stacked up and down；

Fig. 5 is the structure chart that positive metal electrode connects slot；

Fig. 6 is the structure chart that passivation layer and silicon nitride layer have through-hole.

Specific embodiment

In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation Example, is described in further detail the utility model.It should be appreciated that specific embodiment described herein is used only for explaining this Utility model is not used to limit the utility model.

The utility model discloses a kind of single polycrystalline p-type single side PERC battery with transparency conducting layer comprising p-type lining Bottom 1, the upper surface of described P type substrate are sequentially stacked n type diffused layer 2, silica (sio2) layer 3 and positive metal electrode from lower to upper 8；Passivation layer 4, silicon nitride (SiN) layer 5, back electric field layer 6 and back metal electricity are sequentially stacked below the P type substrate from top to bottom Pole 7.Positive electricity is drawn layer and is made of electrically conducting transparent material, when light, which draws layer by positive electricity, to be irradiated in pn-junction, by photoproduction Volta effect generates electromotive force in P type substrate and n type diffused layer, and positive electricity draws layer and connects external load with back metal electrode, To power to external load.

Referring to one embodiment shown in fig. 1, layer of transparent conductive layer 9 is covered above the positive metal electrode 8.This is implemented Example during the preparation process, first prepares positive metal electrode, then transparency conducting layer is arranged in silicon dioxide layer.Due to positive metal electrode Lattice-shaped generally is used, so transparency conducting layer is partially much directly to contact with silicon dioxide layer.The transparency conducting layer With good translucency and electric conductivity, the light receiving rate for making cell piece receive sunlight is improved, and can reduce series resistance, in turn Improve the short circuit current and fill factor of the solar battery of the utility model.

Referring to Fig. 2 shows another embodiment, between the positive metal electrode 8 and silicon dioxide layer 3 be equipped with one layer thoroughly Bright conductive layer 9.During the preparation process, transparency conducting layer is first arranged, then in transparency conducting layer in this embodiment in silicon dioxide layer It is upper to prepare positive metal electrode.Transparency conducting layer and silicon dioxide layer are comprehensive engagements.

Referring to the another embodiment shown in Fig. 4, one layer is equipped between the positive metal electrode 8 and silicon dioxide layer 3 Transparency conducting layer 9 clips positive electricity guidance pole 10 between the transparency conducting layer and silicon dioxide layer.This embodiment is in preparation process In, positive electricity guidance pole is first prepared in silicon dioxide layer, then transparency conducting layer is set, then prepares positive metal over transparent conductive layer Electrode.Since positive electricity guidance extremely generally uses lattice-shaped, so transparency conducting layer is partially much directly to connect with silicon dioxide layer Touching.

In the preferred embodiment, the positive electricity guidance pole 10 and positive metal electrode 8 all use lattice-shaped, and the positive electricity Guide pole identical with the feature size shape of positive metal electrode and consistent in the overlapping of plummet direction, it is as much as possible to allow Light passes through.

The embodiment shown referring to Fig. 3 is equipped with one layer of passivation layer 4 between the n type diffused layer 2 and silicon dioxide layer 3.In Cell piece is placed in reacting furnace when preparing cell piece, when the back side of cell piece is exposed in reacting furnace, front It is similarly exposed in reacting furnace if being not processed.To simplify processing step, production cost is reduced, so the front of cell piece Covering treatment is not done, also generates one layer of passivation layer in the front of cell piece.The passivation layer 4 uses alumina layer or silicon oxynitride Layer or aluminium oxide and the simultaneous doped layer of silicon oxynitride.

Referring to the preferred embodiment shown in Fig. 6, the stacked passivation layer 4 and silicon nitride layer 5 are equipped with multiple perforative Through-hole 11, the back electric field layer 6 can contradict the lower surface of the P type substrate 1 by the through-hole.This structure is first is that can make It is relatively firm to carry on the back electric field layer 6, second is that facilitating collected current.

P type substrate 1 described in the utility model can use p type single crystal silicon piece, can also use p-type polysilicon piece.

Referring to the preferred embodiment shown in Fig. 5, connectivity slot 12 is equipped between the positive metal electrode 8 and n type diffused layer 2, The connectivity slot runs through the silicon dioxide layer 3.These connectivity slots be when firing positive metal electrode 8, metal material What positive metal electrode 8 was formed through silicon dioxide layer under the action of high temperature.Connectivity slot is conducive to positive metal electrode collected current. When the centre of positive metal electrode 8 and n type diffused layer 2 also accompanies passivation layer and/or transparency conducting layer, connectivity slot can be with one And through intermediate interlayer.

In the preferred embodiment, the P type substrate 1 with a thickness of 150 to 300 microns, reflectivity 5% to 25%；Described two Silicon oxide layer 3 with a thickness of 1 to 10 nanometer；The silicon nitride layer 5 with a thickness of 100 to 250 nanometers.

The transparency conducting layer 9 uses Indium-tin Oxide Transparent Conductive Film (ITO) or tungsten oxide tin transparent conductive film (IWO).

The above is preferred embodiments of the present invention, non-to provide constraints.It should be pointed out that being led for this technology For the those of ordinary skill in domain, without departing from the principle of this utility model, several improvements and modifications can also be made, These improvements and modifications are also considered as the protection scope of the utility model.

Claims

1. a kind of single polycrystalline p-type single side PERC battery with transparency conducting layer, including P type substrate (1), it is characterised in that: institute It states the upper surface of P type substrate and is sequentially stacked n type diffused layer (2), silicon dioxide layer (3) and positive metal electrode (8) from lower to upper；It is described Passivation layer (4), silicon nitride layer (5), back electric field layer (6) and back metal electrode are sequentially stacked below P type substrate from top to bottom (7).

2. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: above the positive metal electrode (8) It covers layer of transparent conductive layer (9).

3. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the positive metal electrode (8) and two Layer of transparent conductive layer (9) are equipped between silicon oxide layer (3).

4. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the positive metal electrode (8) and two Layer of transparent conductive layer (9) are equipped between silicon oxide layer (3), positive electricity is clipped between the transparency conducting layer and silicon dioxide layer and draws Lead pole (10).

5. list polycrystalline p-type single side PERC battery as claimed in claim 4, it is characterised in that: positive electricity guidance pole (10) and Positive metal electrode (8) all uses lattice-shaped, and positive electricity guidance pole is identical with the feature size shape of positive metal electrode, simultaneously And it is consistent in the overlapping of plummet direction.

6. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the n type diffused layer (2) and two One layer of passivation layer (4) is equipped between silicon oxide layer (3).

7. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the stacked passivation layer (4) and Silicon nitride layer (5) is equipped with multiple perforative through-holes (11), and the back electric field layer (6) can contradict the P by the through-hole The lower surface of type substrate (1).

8. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the P type substrate (1) uses p-type Monocrystalline silicon piece or p-type polysilicon piece；The passivation layer (4) is using alumina layer or silicon oxynitride layer or aluminium oxide and nitrogen oxygen The simultaneous doped layer of SiClx.

9. list polycrystalline p-type single side PERC battery as described in claim 1, it is characterised in that: the positive metal electrode (8) and N Connectivity slot (12) are equipped between type diffusion layer (2), the connectivity slot runs through the silicon dioxide layer (3).

10. such as the described in any item single polycrystalline p-type single side PERC batteries of claim 2 to 9, it is characterised in that: described transparent to lead Electric layer (9) uses Indium-tin Oxide Transparent Conductive Film or tungsten oxide tin transparent conductive film.