CN105826409A - Local back field N type solar cell, preparation method thereof, assembly and system - Google Patents
Local back field N type solar cell, preparation method thereof, assembly and system Download PDFInfo
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- CN105826409A CN105826409A CN201610265652.7A CN201610265652A CN105826409A CN 105826409 A CN105826409 A CN 105826409A CN 201610265652 A CN201610265652 A CN 201610265652A CN 105826409 A CN105826409 A CN 105826409A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 86
- 239000000243 solution Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 239000002253 acid Substances 0.000 claims abstract description 14
- 239000012670 alkaline solution Substances 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 229910052682 stishovite Inorganic materials 0.000 claims description 14
- 229910052905 tridymite Inorganic materials 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 7
- 241000409201 Luina Species 0.000 claims description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000008199 coating composition Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000003513 alkali Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a local back field N type solar cell, a preparation method thereof, a local back field N type solar cell assembly and a local back field N type solar cell system. The preparation method of the local back field N type solar cell includes the following steps that: doping is performed on an N type crystalline silicon base body, barrier layers are grown, and then, a mask which is in an auxiliary grid-shaped pattern and is formed by acid-resisting slurry is printed on the back surface of the N type crystalline silicon base body; the silicon base body is immersed in an acid solution, so that the barrier layer not covered with the mask can be removed; the silicon base body is immersed in an alkaline solution, so that the mask can be removed, and etching is performed on other regions, and an n+ heavy doped region under the mask is retained; and the silicon base body is immersed in the acid solution again, so that the barrier layers left on the silicon base body can be removed; and finally electrodes are prepared, the preparation of the back field N type solar cell is completed. According to the preparation method of the invention, since back surface auxiliary grids only contact with local n+ heavy doped regions, so that contact resistance is low; and regions which do not contact with the back surface auxiliary grids are non-doped regions, so that Auger recombination is low. The prepared cell has high photoelectric conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly to a kind of local back field N-type solaode and preparation method thereof and assembly, system.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electrical energy.At present, the main product of industry is p-type crystal silicon solar batteries.This battery process is simple, but the efficiency with photo attenuation effect, i.e. battery can increase over time and gradually decay, the result of this generation boron oxygen pair that combines with the oxygen atom in substrate mainly due to the boron atom mixed in P-type silicon substrate.Research shows, boron oxygen, to playing carrier traps effect, makes minority carrier lifetime reduce, thus result in the decay of cell photoelectric conversion efficiency.Relative to p-type crystal silicon battery, N-type crystal silicon battery has the advantages such as photo attenuation good, the minority carrierdiffusion length length of metal impurity con performance little, resistance to, and owing to the positive and negative electrode of N-type crystalline silicon solaode can be fabricated to the H type gate line electrode structure of routine, therefore this battery not only front can be with absorbing light, and its back surface also can absorb reflection and scattered light thus produce extra electric power.
Common N-type crystalline silicon solaode is p+/n/n+ structure, and wherein battery front surface is the doping of p+ type, and back surface is the doping of n+ type.In order to reduce the contact resistance between backplate and n+ doped region, it is desirable that n+ layer is heavy doping.In order to improve open-circuit voltage and the short circuit current of battery, it is desirable to reduce heavy doping brings high auger recombination, wish that the most again n+ layer is for being lightly doped.Prior art cannot solve the contradiction between fill factor, curve factor and the open-circuit voltage short circuit current brought by back surface n+ type doped region well.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of local back field N-type solaode and preparation method thereof and assembly, system.The local back field N-type solaode that the preparation method of the local back field N-type solaode that the present invention provides obtains can preferably solve the contradiction between fill factor, curve factor and the open-circuit voltage short circuit current brought by back surface n+ type doped region.
The preparation method of a kind of local back field N-type solaode that the present invention provides, its technical scheme is:
The preparation method of a kind of local back field N-type solaode, comprises the following steps:
(1), N-type crystalline silicon matrix being doped process, then front surface and back surface at N-type crystalline silicon matrix prepare barrier layer, and the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processes prints acidproof slurry and dries the mask forming secondary palisade pattern；
(3), by the N-type crystalline silicon matrix after step (2) process immersing and remove the barrier layer not being covered by the mask region in acid solution, the barrier layer in front requires not removed by acid solution, but thickness can be the most thinning；
(4), by the N-type crystalline silicon matrix after step (3) process immersing and remove mask in alkaline solution, the n+ heavily doped region not being covered by the mask removed by alkaline solution simultaneously, and the local n+ heavily doped region being covered by the mask is not destroyed；
(5), again N-type crystalline silicon matrix is immersed removal front surface and the barrier layer of back surface remnants in acid solution；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processes is prepared passivated reflection reducing membrane and prepares passivating film at back surface, then front surface and back surface at N-type crystalline silicon matrix use metal paste printing front electrode and backplate, the back side pair grid of backplate are connected with local n+ heavily doped region, complete the preparation of local back field N-type solaode after sintering.
Wherein, the method that N-type crystalline silicon matrix is doped in step (1) process comprises the following steps:
S1, selection N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm；
S2, step S1 is processed after N-type crystalline silicon matrix put into and making herbs into wool face is carried out boron by industrial diffusion furnace diffuse to form the p+ doped region of front surface, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 minute；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix put in etching cleaning machine, remove the diffused layer of boron of back surface and the Pyrex layer of front surface；
S4, use ion implantation apparatus N-type crystalline silicon matrix back surface after step S3 processes inject phosphorus and carry out the n+ heavily doped region of annealing formation back surface, and the sheet resistance value of n+ heavily doped region is 10-40 Ω/sqr；The peak temperature of annealing is 700～950 DEG C, and annealing time is 30～200min, and environment source of the gas is N2And O2。
Wherein, barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, and backside barrier layer thickness is 50-100nm.
Wherein, a width of 60-160 μm of the mask of secondary palisade pattern in step (2), parallel to each other, spacing is 1-2mm.
Wherein, the HF solution that acid solution is 5-20% in step (3), the time that N-type crystalline silicon matrix immerses in 5-20%HF solution is 0.5-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
Wherein, the alkaline solution in step (4) is 10～the tetramethyl ammonium hydroxide solution of the NaOH solution of the KOH solution of 30%, 10～30%, 10～30% or 10～the ethylenediamine solution of 30%；The temperature of alkaline solution is 50-90 DEG C, and the response time that N-type crystalline silicon matrix immerses in alkaline solution is 0.5-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
Wherein, the acid solution in step (5) is in the HF solution of 5-20%, and the time that N-type crystalline silicon matrix immerses in 5-20%HF solution is 2-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
Wherein, in step (6), the method preparing front electrode and backplate at the front surface of N-type crystalline silicon matrix and back surface is: the back surface at N-type crystalline silicon matrix uses the backplate of silver slurry printing H type grid line and dries, wherein back side main grid width 0.5-3mm, spaced set 3-6 root, back side pair grid width 40-100 μm；Front surface at N-type crystalline silicon matrix uses to be mixed aluminum paste printing front main grid and front pair grid and dries, wherein front main grid width 0.5-3mm, spaced set 3-6 root, front pair grid width 40-100 μm；The peak temperature of sintering is not higher than 900 DEG C.
Present invention also offers a kind of local back field N-type solaode, including N-type crystalline silicon matrix, the front surface of N-type crystalline silicon matrix includes p+ doped region the most from inside to outside and front surface passivated reflection reducing membrane；The back surface of N-type crystalline silicon matrix includes local n+ heavily doped region the most from inside to outside and back surface passivation film；N-type crystalline silicon matrix also includes the backplate being arranged on back surface, and backplate includes that back side main grid and back side pair grid, back side pair grid are connected with local n+ heavily doped region.
Wherein, back side main grid and back side pair grid constitute H type grid line, wherein back side main grid width 0.5-3mm, spaced set 3-6 root, back side pair grid width 40-100 μm.
Wherein, N-type crystalline silicon matrix also includes the front electrode being arranged on front surface, and front electrode includes front main grid and front pair grid, wherein front main grid width 0.5-3mm, spaced set 3-6 root, front pair grid width 40-100 μm.
Wherein, passivated reflection reducing membrane is SiO2、SiNxOr Al2O3In deielectric-coating one or more, passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of passivated reflection reducing membrane is 70～110nm；The thickness of passivating film is for being not less than 20nm.
Wherein, back side main grid is silver back side main grid, and back side pair grid are silver back side pair grid；Front main grid is aerdentalloy front main grid, and front pair grid are aerdentalloy front pair grid.
Present invention also offers a kind of local back field N-type solar module, including the front layer material from top to bottom set gradually, encapsulating material, local back field N-type solaode, encapsulating material, backsheet, local back field N-type solaode is above-mentioned a kind of local back field N-type solaode.
Present invention also offers a kind of local back field N-type solar cell system, including the local back field N-type solar module of more than one series connection, local back field N-type solar module is above-mentioned a kind of local back field N-type solar module.
The enforcement of the present invention includes techniques below effect:
The present invention has the technical effect that: after the present invention is by arranging the sequence of operations process such as deielectric-coating, acidproof slurry mask, acid liquid corrosion and alkali liquid corrosion, local n+ heavily doped region can be formed at the back side of N-type crystalline silicon, during subsequent metallisation, secondary grid metal paste only contacts local n+ heavily doped region.Owing to back side pair grid only contact with local n+ heavily doped region, so contact resistance is low；Meanwhile, the region of discord secondary grid contact is undoped region, so auger recombination is low.So the N-shaped solaode prepared according to the inventive method has higher fill factor, curve factor, open-circuit voltage and short circuit current, so having higher photoelectric transformation efficiency simultaneously.
Accompanying drawing explanation
Fig. 1 is the battery structure schematic cross-section after the preparation method step one of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 2 is the battery structure schematic cross-section after the preparation method step 4 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 3 is the battery structure schematic cross-section after the preparation method step 5 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 4 is the battery structure schematic cross-section after the preparation method step 6 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 5 is the battery structure schematic cross-section after the preparation method step 7 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 6 is the battery structure schematic cross-section after the preparation method step 8 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 7 is the battery structure schematic cross-section after the preparation method step 9 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 8 is the battery structure schematic cross-section after the preparation method step 10 of a kind of local back field N-type solaode of the embodiment of the present invention.
Fig. 9 is the battery structure schematic cross-section after the preparation method step 11 of a kind of local back field N-type solaode of the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described embodiment is intended merely to facilitate the understanding of the present invention, and it does not play any restriction effect.
See shown in Fig. 1 to Fig. 9, the preparation method of a kind of local back field N-type solaode that the present embodiment provides, comprise the following steps:
(1), select the N-type crystalline silicon matrix 10 of 156mm × 156mm, and the front surface of N-type crystalline silicon matrix 10 is made making herbs into wool process；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably 1～5 Ω cm；The thickness of N-type crystalline silicon matrix 10 is 50～300 μm, preferably 80～200 μm；Complete the battery structure after this step as shown in Figure 1.
(2) the N-type crystalline silicon matrix 10 after, step (1) being processed is put into and making herbs into wool face carries out in industrial diffusion furnace boron is diffuseed to form the p+ doped region 12 of front surface, boron source uses Boron tribromide, diffusion temperature is 900-1000 DEG C, and the time is 60-180 minute.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably 50-70 Ω/sqr.
(3), the N-type crystalline silicon matrix 10 after boron diffusion is put in etching cleaning machine, remove diffused layer of boron and the Pyrex layer of front surface of back surface.
(4), using ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (3) processes inject phosphorus and carry out the n+ heavily doped region 16 of annealing formation back surface, the sheet resistance of n+ heavily doped region 16 is 10-40 Ω/sqr.The peak temperature of annealing is 700～950 DEG C, and preferably 850～900 DEG C, annealing time is 30～200min, preferably 60～200min, and environment source of the gas is preferably N2And O2.Complete the battery structure after this step as shown in Figure 2.
(5), step (4) process after N-type crystalline silicon matrix 10 front surface and back surface on grow barrier layer.Barrier layer can be SiO2Layer or SiNxLayer, the present embodiment uses SiO2Layer is as concrete example.Concrete grammar is, is put into by N-type crystalline silicon matrix 10 in PECVD (plasma enhanced chemical vapor deposition) equipment, at the front SiO that front surface growth thickness is 200-300nm2Layer 13, at the back side SiO that back surface growth thickness is 50-100nm2Layer 17.Complete the battery structure after this step as shown in Figure 3.
(6), the back surface of the N-type crystalline silicon matrix 10 after step (5) processes prints acidproof slurry 40 and dries formation mask.It crosses the pattern after ink is secondary grid line structure, and secondary grid line live width 60-160 μm, long 154mm, parallel to each other, spacing is 1-2mm, preferably 1.55mm, arranges 100 altogether.Complete the battery structure after this step as shown in Figure 4.
(7), immersing in 5-20%HF solution by the N-type crystalline silicon matrix 10 after step (6) process, after 0.5-5 minute, taking-up deionized water cleans up.Now back surface is not covered by the mask the SiO in region2Removed by HF clean, and front surface still has most of SiO2It is not removed.Complete the battery structure after this step as shown in Figure 5.
(8), by step (7) process after N-type crystalline silicon matrix 10 immerse 10～30% percentage by weight alkali liquor in, operating temperature is 50-90 DEG C, reacts 0.5-5 minute taking-up deionized water and cleans up.Now back surface is not covered by the mask region because not having SiO2Protection will react with alkali liquor, the n+ heavily doped region in these regions is removed.The most remaining mask also will be removed totally by alkali liquor.The region being covered by the mask is then for local n+ heavily doped region 161；Noting in this step, the p+ doped region 12 of front surface and the local n+ heavily doped region 161 of back surface are coated with SiO due to surface2Film, can't react with alkali liquor.Alkali liquor can be KOH, NaOH, Tetramethylammonium hydroxide or ethylenediamine solution.Complete the battery structure after this step as shown in Figure 6.
(9), immersing in 5-20%HF solution by the N-type crystalline silicon matrix 10 after step (8) process, after 2-5 minute, taking-up deionized water cleans up.Now front surface and the SiO of back surface remnants2Layer is all removed clean.Complete the battery structure after this step as shown in Figure 7.
(10) front surface of the N-type crystalline silicon matrix 10, after step (9) processes arranges passivated reflection reducing membrane 14 and arranges passivating film 18 at back surface, and wherein the passivated reflection reducing membrane 14 of front surface is SiO2、SiNxAnd Al2O3In deielectric-coating one or more, the passivating film 18 of back surface is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of front surface passivated reflection reducing membrane 14 is 70～110nm；The thickness of back surface passivation film 18 is for being not less than 20nm.Complete the battery structure after this step as shown in Figure 8.
(11), the back surface at N-type crystalline silicon matrix 10 uses silver slurry print electrode and dry, its electrode pattern is H type grid line, wherein back side main grid 22 live width 0.5-3mm, long 154mm, spaced set 3-6 root, back side pair grid 26 live width 40-100 μm, long 154mm, parallel to each other, spacing is 1.55mm, arranges 100 altogether.The back side pair grid 26 after printing must be made to fall in local n+ heavily doped region 161.Front surface at N-type crystalline silicon matrix 10 uses to be mixed aluminum paste printing front main grid 20 and front pair grid 24 and dries.Wherein front main grid 20 live width 0.5-3mm, long 154mm, spaced set 3-6 root.Front pair grid 24 live width 40-100 μm, long 154mm, parallel to each other, spacing is 1.95mm, arranges 80 altogether.Complete the battery structure after this step as shown in Figure 9.
(12), by the N-type crystalline silicon matrix 10 after step (11) process transmitting and be sintered into belt sintering stove, sintering peak temperature is not higher than 900 DEG C, i.e. completes the making of local back field N-type solaode.
After the preparation method of the local back field N-type solaode that the present embodiment provides is by arranging the sequence of operations process such as deielectric-coating, acidproof slurry mask, acid liquid corrosion and alkali liquid corrosion, selective local n+ heavily doped region can be formed at the back side of N-type crystalline silicon, during subsequent metallisation, secondary grid metal paste only contacts local n+ heavily doped region.Owing to secondary grid only contact with local n+ heavily doped region, so contact resistance is low, fill factor, curve factor is high；Meanwhile, the region of discord secondary grid contact is undoped region, so auger recombination is low, open-circuit voltage is high.And using prior art, if the n+ doped region at the back side is heavy doping, although contact resistance is low, but open-circuit voltage is the lowest；If the n+ doped region at the back side is for being lightly doped, although open-circuit voltage is high, but contact resistance is high, fill factor, curve factor is poor.As can be seen here, the N-shaped solaode prepared according to the method described above can overcome the open-circuit voltage and the contradiction of fill factor, curve factor that prior art exists, so having higher photoelectric transformation efficiency.
Shown in Figure 9, the present embodiment additionally provides a kind of local back field N-type solaode, and including N-type crystalline silicon matrix 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 the most from inside to outside and front surface passivated reflection reducing membrane 14；The back surface of N-type crystalline silicon matrix 10 includes local n+ heavily doped region 161 the most from inside to outside and back surface passivation film 18；N-type crystalline silicon matrix 10 also includes the backplate being arranged on back surface, and backplate includes that back side main grid 22 and back side pair grid 26, back side pair grid are connected with local n+ heavily doped region 161.Owing to back side pair grid 26 only contact with local n+ heavily doped region 161, so contact resistance is low；Meanwhile, the region of discord back side pair grid contact is undoped region, so auger recombination is low.The local back field N-type solaode of the present embodiment has higher fill factor, curve factor, open-circuit voltage and short circuit current simultaneously, so having higher photoelectric transformation efficiency.
Preferably, back side main grid and back side pair grid constitute H type grid line, the wherein wide 0.5-3mm of back side main grid 22, spaced set 3-6 root, the wide 40-100 μm of back side pair grid 26.N-type crystalline silicon matrix 10 also includes the front electrode being arranged on front surface, and front electrode includes front main grid 20 and front pair grid 24, the wherein wide 0.5-3mm of front main grid 20, spaced set 3-6 root, the wide 40-100 μm of front pair grid 24.Passivated reflection reducing membrane 14 is SiO2、SiNxOr Al2O3In deielectric-coating one or more, passivating film 18 is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of passivated reflection reducing membrane is 70～110nm；The thickness of passivating film is for being not less than 20nm.
In the present embodiment, backplate is formed by printing silver slurry sintering, and front electrode is mixed aluminum paste sintering by printing and formed, therefore the back side main grid 22 of local back field N-type solaode is silver back side main grid, and back side pair grid 26 are silver back side pair grid；Front main grid 20 is aerdentalloy front main grid, and front pair grid 24 are aerdentalloy front pair grid.
The present embodiment additionally provides a kind of local back field N-type solar module, including the front layer material from top to bottom connected, encapsulating material, local back field N-type solaode, encapsulating material, backsheet, local back field N-type solaode is above-mentioned a kind of local back field N-type solaode.The structure and working principle of the local back field N-type solar module of the present embodiment uses technology well known in the art, and the improvement of the local back field N-type solar module of present invention offer only relates to above-mentioned local back field N-type solaode, other parts are not modified.Therefore local back surface field N-type solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to local back surface field N-type solar module repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize the local back field N-type solar module of the present invention.
The present embodiment additionally provides a kind of local back field N-type solar cell system, and including the local back field N-type solar module of one or more than one series connection, local back field N-type solar module is above-mentioned a kind of local back field N-type solar module.The structure and working principle of the local back field N-type solar cell system of the present embodiment uses technology well known in the art, and the improvement of the local back field N-type solar cell system of present invention offer only relates to above-mentioned local back field N-type solaode, other parts are not modified.Therefore local back surface field N-type solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to local back surface field N-type solar cell system repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize the local back field N-type solar cell system of the present invention.
Finally should be noted that; above example is only in order to illustrate technical scheme; rather than limiting the scope of the invention; although having made to explain to the present invention with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention.
Claims (15)
1. the preparation method of a local back field N-type solaode, it is characterised in that: comprise the following steps:
(1), N-type crystalline silicon matrix being doped process, then front surface and back surface at N-type crystalline silicon matrix prepare barrier layer, and the thickness of backside barrier layer is less than the thickness of frontside barrier layers；
(2), the back surface of the N-type crystalline silicon matrix after step (1) processes prints acidproof slurry and dries the mask forming secondary palisade pattern；
(3), by the N-type crystalline silicon matrix after step (2) process immersing and remove the barrier layer not being covered by the mask region in acid solution, the barrier layer in front requires not removed by acid solution, but thickness can be the most thinning；
(4), by the N-type crystalline silicon matrix after step (3) process immersing and remove mask in alkaline solution, the n+ heavily doped region not being covered by the mask removed by alkaline solution simultaneously, and the region being covered by the mask is local n+ heavily doped region；
(5), again N-type crystalline silicon matrix is immersed removal front surface and the barrier layer of back surface remnants in acid solution；
(6), the front surface of the N-type crystalline silicon matrix after step (5) processes is prepared passivated reflection reducing membrane and prepares passivating film at back surface, then front surface and back surface at N-type crystalline silicon matrix use metal paste printing front electrode and backplate, the back side pair grid of backplate are connected with local n+ heavily doped region, complete the preparation of local back field N-type solaode after sintering.
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterised in that: the method that N-type crystalline silicon matrix is doped in step (1) process comprises the following steps:
S1, selection N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm；
S2, step S1 is processed after N-type crystalline silicon matrix put into and making herbs into wool face is carried out boron by industrial diffusion furnace diffuse to form the p+ doped region of front surface, boron source uses Boron tribromide, and diffusion temperature is 900-1000 DEG C, and the time is 60-180 minute；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3, boron is spread after N-type crystalline silicon matrix put in etching cleaning machine, remove the diffused layer of boron of back surface and the Pyrex layer of front surface；
S4, use ion implantation apparatus N-type crystalline silicon matrix back surface after step S3 processes inject phosphorus and carry out the n+ heavily doped region of annealing formation back surface, and the sheet resistance value of n+ heavily doped region is 10-40 Ω/sqr；The peak temperature of annealing is 700～950 DEG C, and annealing time is 30～200min, and environment source of the gas is N2And O2。
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterised in that: described barrier layer is SiO2Layer or SiNxLayer, the thickness of frontside barrier layers is 200-300nm, and backside barrier layer thickness is 50-100nm.
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterised in that: a width of 60-160 μm of the mask of secondary palisade pattern in step (2), parallel to each other, spacing is 1-2mm.
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterized in that: the HF solution that acid solution is 5-20% in step (3), the time that N-type crystalline silicon matrix immerses in 5-20%HF solution is 0.5-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterised in that: the described alkaline solution in step (4) is 10～the tetramethyl ammonium hydroxide solution of the NaOH solution of the KOH solution of 30%, 10～30%, 10～30% or 10～the ethylenediamine solution of 30%；The temperature of alkaline solution is 50-90 DEG C, and the response time that N-type crystalline silicon matrix immerses in alkaline solution is 0.5-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
The preparation method of a kind of local back field N-type solaode the most according to claim 1, it is characterized in that: the acid solution in step (5) is in the HF solution of 5-20%, the time that N-type crystalline silicon matrix immerses in 5-20%HF solution is 2-5 minute, cleans with deionized water after taking out N-type crystalline silicon matrix.
8. according to the preparation method of the arbitrary described a kind of local back field N-type solaode of claim 1～7, it is characterized in that: in step (6), the method preparing front electrode and backplate at the front surface of N-type crystalline silicon matrix and back surface is: the back surface at N-type crystalline silicon matrix uses the backplate of silver slurry printing H type grid line and dries, wherein back side main grid width 0.5-3mm, spaced set 3-6 root, back side pair grid width 40-100 μm；Front surface at N-type crystalline silicon matrix uses to be mixed aluminum paste printing front main grid and front pair grid and dries, wherein front main grid width 0.5-3mm, spaced set 3-6 root, front pair grid width 40-100 μm.
9. a local back field N-type solaode, including N-type crystalline silicon matrix, the front surface of described N-type crystalline silicon matrix includes p+ doped region the most from inside to outside and front surface passivated reflection reducing membrane；The back surface of described N-type crystalline silicon matrix includes local n+ heavily doped region the most from inside to outside and back surface passivation film；It is characterized in that: described N-type crystalline silicon matrix also includes being arranged on the backplate of back surface, described backplate includes that back side main grid and back side pair grid, described back side pair grid are connected with described local n+ heavily doped region.
A kind of local back field N-type solaode the most according to claim 9, it is characterised in that: described back side main grid and described back side pair grid constitute H type grid line, wherein back side main grid width 0.5-3mm, spaced set 3-6 root, back side pair grid width 40-100 μm.
11. a kind of local back field N-type solaodes according to claim 9, it is characterized in that: described N-type crystalline silicon matrix also includes being arranged on the front electrode of front surface, described front electrode includes front main grid and front pair grid, wherein front main grid width 0.5-3mm, spaced set 3-6 root, front pair grid width 40-100 μm.
12. a kind of local back field N-type solaodes according to claim 9, it is characterised in that: described passivated reflection reducing membrane is SiO2、SiNxOr Al2O3In deielectric-coating one or more, described passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of described passivated reflection reducing membrane is 70～110nm；The thickness of described passivating film is for being not less than 20nm.
13. a kind of local back field N-type solaodes according to claim 11, it is characterised in that: described back side main grid is silver back side main grid, and described back side pair grid are silver back side pair grid；Described front main grid is aerdentalloy front main grid, and described front pair grid are aerdentalloy front pair grid.
14. 1 kinds of local back field N-type solar modules, including the front layer material from top to bottom set gradually, encapsulating material, local back field N-type solaode, encapsulating material, backsheet, it is characterised in that: described local back field N-type solaode is the arbitrary described a kind of local back field N-type solaode of claim 9-13.
15. 1 kinds of local back field N-type solar cell systems, local back field N-type solar module including more than one series connection, it is characterised in that: described local back field N-type solar module is a kind of local back field N-type solar module described in claim 14.
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