CN101764170A - Aluminized emitter N-type solar battery and production method thereof - Google Patents
Aluminized emitter N-type solar battery and production method thereof Download PDFInfo
- Publication number
- CN101764170A CN101764170A CN200910214463A CN200910214463A CN101764170A CN 101764170 A CN101764170 A CN 101764170A CN 200910214463 A CN200910214463 A CN 200910214463A CN 200910214463 A CN200910214463 A CN 200910214463A CN 101764170 A CN101764170 A CN 101764170A
- Authority
- CN
- China
- Prior art keywords
- type
- type semiconductor
- aluminized
- emitter
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 34
- 239000004411 aluminium Substances 0.000 claims description 30
- 239000002002 slurry Substances 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011267 electrode slurry Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 238000004513 sizing Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 238000000637 aluminium metallisation Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910000632 Alusil Inorganic materials 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000003854 Surface Print Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002508 compound effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- -1 iron Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an aluminized emitter N-type solar battery. The aluminized emitter N-type solar battery mainly comprises six parts of an N-type semiconductor substrate, a heavily doped N-type semiconductor layer, a medium film, an aluminum electrode, a metal front electrode and a P-type semiconductor layer, wherein the heavily doped N-type semiconductor layer only exists in a local region below the metal front electrode; other regions on the front surface of the solar battery is covered by the medium film; and the metal front electrode passes through the medium film and is contacted with the heavily doped N-type semiconductor layer on the front surface of the solar battery. The invention also discloses a production method for the aluminized emitter N-type solar battery. Compared with the aluminized emitter N-type solar battery in the conventional structure, the aluminized emitter N-type solar battery ensures that good ohmic contact is formed between the metal front electrode and a semiconductor substrate, reduces the average doping concentration of the front surface, and contributes to increasing a short circuit current and an open circuit voltage of the battery so as to obtain higher photoelectric transformation efficiency.
Description
Technical field
The invention belongs to the solar energy power generating field, be specifically related to a kind of aluminized emitter N-type solar battery and preparation method thereof.
Background technology
Solar cell is a kind of semiconductor device that utilizes photovoltaic effect solar energy directly to be converted to electric energy.On structure, solar cell is made up of p-n junction, deielectric-coating and a metal electrode that is positioned at semiconductor substrate surface.
According to the difference of substrate conduction type, can be divided into two kinds in P type and N type solar cell to solar cell.P type solar cell technical maturity has occupied the leading position in solar cell market.But there is tangible light induced attenuation characteristic in P type solar cell, and this makes a lot of research institutions and manufacturing enterprise transfer to sight on the N type solar cell.Because N type crystalline silicon boron content is few, thus also not obvious by boron-oxygen to the photo attenuation phenomenon that is caused.In addition, because N type crystalline silicon is better than P type crystalline silicon to the tolerance of transition metal such as iron, so generally speaking, N type crystalline silicon has higher minority carrier life time.This is highly beneficial for making efficient solar battery.The HIT solar cell of the A300 of U.S. Sunpower company series solar cell and Japanese Sanyo company has adopted unique N type solar battery structure just, has obtained the high conversion efficiency of present commercialization solar cell.
Except A300 series and HIT solar cell, the aluminized emitter structure is the N type solar battery structure that another kind is paid close attention to.The structure of traditional aluminized emitter N-type solar battery mainly is made up of electrode 6 six parts before N type semiconductor substrate 1, p type semiconductor layer 7, heavy doping n type semiconductor layer 2, deielectric-coating 3, aluminium electrode 4 and the metal as shown in Figure 1.The principal character of aluminized emitter N-type solar battery is to adopt N type semiconductor material (as N type crystalline silicon) as substrate, and substrate back of the body surface forms p-n junction by the alloying process with the aluminium electrode.Traditional aluminized emitter N-type solar battery also can form the height knot at the substrate front surface by phosphorous diffusion, and as the front-surface field of solar cell, it is compound to be used to reduce front surface, improves the collection probability of photo-generated carrier.The making flow process of this aluminized emitter N-type solar battery as shown in Figure 3, its manufacture craft and P type solar cell manufacture craft are compatible fully, can produce by existing equipment.Therefore, aluminized emitter N-type solar battery has industrialization prospect preferably.
For aluminized emitter N-type solar battery, the front surface recombination rate is quite obvious to the influence of battery efficiency.This is because most of sunlight all is absorbed in the very thin zone of front surface, and still, near the photo-generated carrier that produces the front surface must be moved to battery back of the body surface p-n knot and just can be collected.In this diffusion process, photo-generated carrier is easy to carry out at the battery front surface compound, thereby reduces the conversion efficiency of solar cell.Low front surface recombination rate is the prerequisite that guarantees the aluminized emitter efficiency of solar cell.
Reduce the front surface doping content and can reduce solar cell front surface recombination rate, but this can cause the raising of contact resistance between Semiconductor substrate and the preceding electrode of metal simultaneously.Contact resistance is high more, and the solar cell performance is poor more.Because traditional aluminized emitter N-type solar battery front surface adopts the phosphorus-diffused layer of doping content unanimity as front-surface field, therefore, front surface recombination rate and metal-semiconductor contact resistance are the factors of a pair of mutual competition.High surface doping concentration means low contact resistance and high recombination-rate surface; Low surface doping concentration means high contact resistance and low recombination-rate surface.
Summary of the invention
An object of the present invention is to propose a kind of aluminized emitter N-type solar battery with local front-surface field, this solar cell can be realized low front surface recombination rate and low metal-semiconductor contact resistance simultaneously, helps improving the efficient of aluminized emitter N-type solar battery.
Another object of the present invention is to propose a kind of method of making above-mentioned aluminized emitter N-type solar battery, and this method technology is simple, can use existing P type solar cell production equipment to carry out large-scale production, has good industrial prospect.
A kind of aluminized emitter N-type solar battery provided by the invention, mainly by the N type semiconductor substrate, the heavy doping n type semiconductor layer, deielectric-coating, the aluminium electrode, electrode and p type semiconductor layer six parts are formed before the metal, the position relation of each several part from top to bottom is electrode before the metal successively, deielectric-coating, the heavy doping n type semiconductor layer, the N type semiconductor substrate, p type semiconductor layer and aluminium electrode, it is characterized in that, described heavy doping n type semiconductor layer is the regional area that the solar cell front-surface field only is present in the preceding electrode of metal below, other zone of solar cell front surface is covered by deielectric-coating, and the preceding electrode of metal penetrates deielectric-coating and contacts with the heavy doping n type semiconductor layer of solar cell front surface.
Heavy doping n type semiconductor layer of the present invention is the n type semiconductor layer of donor impurities such as heavy doping phosphorus, arsenic or antimony.
Deielectric-coating of the present invention is single-layer dielectric film or multilayer dielectric film.
The composition of single-layer dielectric film of the present invention is silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride.
Multilayer dielectric film of the present invention is the combination in any of silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride single-layer dielectric film.
The main component of electrode is the alloy that silver, copper, nickel, aluminium, tin or these metallic elements are formed before the metal of the present invention.
The N type semiconductor substrate p type semiconductor layer surperficial with being positioned at the battery back of the body constitutes the p-n junction of solar cell.This p-n junction is positioned at solar cell back of the body surface, is used to collect the photo-generated carrier of solar cell.For aluminized emitter N-type solar battery, generally adopt the aluminium p type island region territory of mixing that forms in N type crystalline silicon and the alusil alloy process to constitute p-n junction.
For aluminized emitter N-type solar battery of the present invention, the heavy doping n type semiconductor layer only is positioned at the regional area of the preceding electrode of solar cell metal below.This heavy doping n type semiconductor layer can be the N type semiconductor coating region of donor impurities such as heavy doping phosphorus, arsenic, antimony, as mixes the crystalline silicon thin layer of phosphorus.Its effect is the n that forms local at the solar cell front surface
++The n type is just tied, and this internal electric field of just tying generation helps reducing photo-generated carrier compound at the battery front surface, thereby improves the short circuit current and the open circuit voltage of solar cell.Above-mentioned internal electric field is called front-surface field.Except forming local front-surface outside the venue, another effect of heavy doping n type semiconductor layer is the contact resistance that reduces between preceding electrode of metal and the N type semiconductor substrate, thereby improves the fill factor, curve factor of solar cell.
For aluminized emitter N-type solar battery of the present invention, deielectric-coating covers solar cell front surface Zone Full the electrode before metal.Deielectric-coating has reduced the reflection of light at the solar cell front surface on the one hand; Then play surface passivation on the other hand, reduce the compound effect of front surface.Two kinds of the deielectric-coating of using always in production silicon nitride, silica.In addition, the multiple multilayer dielectric film of amorphous silicon, aluminium oxide, carborundum and above-mentioned single-layer dielectric film composition also demonstrates the good surface passivation performance under study for action.
For aluminized emitter N-type solar battery of the present invention, the aluminium electrode covers whole or most of zone on solar cell back of the body surface.The one side of aluminium electrode plays the effect of collecting the hole, then provides the p type semiconductor layer doping required acceptor impurity on the other hand.As previously mentioned, the p-n junction of aluminized emitter N-type solar battery forms in the alusil alloy process.At high temperature, the alusil alloy that aluminium electrode and N type silicon substrate interface form fusion mutually, subsequently along with decrease of temperature, the alusil alloy initial recrystallization of fusion is also separated out unnecessary aluminium, finally forms the thin silicone layer of crystallization again that one deck is mixed aluminium on silicon substrate back of the body surface.This zone is exactly the p type semiconductor layer in the aluminized emitter N-type solar battery.
For aluminized emitter N-type solar battery of the present invention, electrode penetrates deielectric-coating, is positioned on the heavy doping n type semiconductor layer before the metal.Its main component is the alloy that silver, copper, nickel, aluminium, tin or these elements are formed.The effect of electrode mainly is to collect the electronics that solar cell produces before the metal.For a kind of method of making above-mentioned aluminized emitter N-type solar battery that the present invention relates to, electrode also plays the effect that the required donor impurity of heavy doping n type semiconductor layer is provided before the metal.
The invention allows for a kind of method of making above-mentioned aluminized emitter N-type solar battery, it is characterized in that, adopt N type heavily doped silicon slurry to form the heavy doping n type semiconductor layer, and on the heavy doping n type semiconductor layer, make electrode before the metal at battery front surface local location.Specifically comprise following two kinds of methods:
Method one: may further comprise the steps:
(a) the N type semiconductor substrate is carried out surface-texturing and carries out chemical cleaning;
(b) prepare deielectric-coating at the N type semiconductor substrate surface;
(c) at battery back of the body surface preparation aluminium electrode;
(d) in the also oven dry of the regional area printing N of battery front surface type heavy doping slurry;
(e) the battery front surface be printed on N type heavy doping slurry regional type metal electrode slurry and the oven dry;
(f) high temperature sintering.
Method two: may further comprise the steps:
(a) the N type semiconductor substrate is carried out surface-texturing and carries out chemical cleaning;
(b) prepare deielectric-coating at the N type semiconductor substrate surface;
(c) at battery back of the body surface preparation aluminium electrode;
(d) with N type heavy doping slurry and regional area that is printed on the battery front surface after metal electrode sizing mixes simultaneously and oven dry;
(e) high temperature sintering.
Manufacture method for aluminized emitter N-type solar battery of the present invention, wherein said surface-texturing and chemical cleaning step are meant with acid or alkali makes the light trapping structure of pyramid or pit shape at the N type semiconductor substrate surface, and with chemical its surface is cleaned.
For the manufacture method of aluminized emitter N-type solar battery of the present invention, the single or multiple lift deielectric-coating that wherein said deielectric-coating mainly is made up of silicon nitride, silica or aluminum oxide film.It covers the front surface or the full surface of N type semiconductor substrate.Deielectric-coating mainly plays the effect that reduces reflection and surface passivation.
For the manufacture method of aluminized emitter N-type solar battery of the present invention, wherein said aluminium electrode is that the method by silk screen printing aluminum slurry, sputtered aluminum metal film or AM aluminum metallization metal film prepares.
For the manufacture method of aluminized emitter N-type solar battery of the present invention, the main component of wherein said N type heavy doping slurry is to mix phosphorus, mix arsenic or mix the silicon grain of antimony.This N type heavy doping slurry has certain fluidity, can be coated in solar battery surface by silk screen printing or other printing process.
For the manufacture method of aluminized emitter N-type solar battery of the present invention, wherein said sintering step is meant solar cell is carried out high temperature (500～1000 ℃) processing procedure.In sintering process, N type heavy doping slurry and N type semiconductor substrate merge on the one hand, form the heavy doping N type layer of local on the N type semiconductor surface; On the other hand, aluminium electrode and N type semiconductor substrate interface at high temperature form alusil alloy, and form p type semiconductor layer in cooling procedure, constitute p-n junction with the N type semiconductor substrate.
Compare with the traditional structure aluminized emitter N-type solar battery, its heavy doping of aluminized emitter N-type solar battery structure N type layer that the present invention proposes only is present near the semiconductor regions the front electrodes of solar cells, and all the other positions of solar cell front surface are covered by deielectric-coating.This structure helps reducing the average doping content of solar cell front surface, thereby it is compound to reduce front surface.Form good ohmic before heavy doping N type layer under front electrodes of solar cells not only makes metal between electrode and the Semiconductor substrate and contact, also provide a local front-surface field for solar cell.These improve and all improve short circuit current and open circuit voltage under the prerequisites that does not reduce the solar cell fill factor, curve factor, thereby battery efficiency is improved.
Compare with the manufacture method (as Fig. 3) of traditional aluminized emitter N-type solar battery, the manufacture method of the novel aluminized emitter N-type solar battery that the present invention proposes has been avoided the phosphorous diffusion operation, significantly reduced the high-temperature process time of solar cell, this makes production cycle shortening, energy consumption reduce on the one hand, and the performance degradation that Semiconductor substrate is occurred in high-temperature process is avoided.The manufacture method that the present invention proposes also avoids removing the operation of the surperficial heavy doping N type layer of the back of the body, has further simplified manufacture craft.
Description of drawings
Fig. 1 is the structural representation of traditional aluminized emitter N-type solar battery
Fig. 2 is the structural representation of aluminized emitter N-type solar battery of the present invention
Fig. 3 is for making the process chart of traditional aluminized emitter N-type solar battery
Fig. 4 is for making the process chart (embodiment one) of aluminized emitter N-type solar battery of the present invention
Fig. 5 is for making the process chart (embodiment two) of aluminized emitter N-type solar battery of the present invention
In Fig. 1～5,1, the N type semiconductor substrate, 2, the heavy doping n type semiconductor layer, 3, deielectric-coating, 4, aluminium electrode, 5, metal electrode sizing, 6, electrode before the metal, 7, p type semiconductor layer, 8, N type heavy doping slurry, 9, be mixed with the metal electrode sizing of N type heavy doping slurry.
Embodiment
As shown in Figure 2, aluminized emitter N-type solar battery of the present invention, mainly by N type semiconductor substrate 1, heavy doping n type semiconductor layer 2, deielectric-coating 3, aluminium electrode 4, electrode 6 and p type semiconductor layer 7 six parts are formed before the metal, the position relation of each several part from top to bottom is electrode 6 before the metal successively, deielectric-coating 3, heavy doping n type semiconductor layer 2, N type semiconductor substrate 1, p type semiconductor layer 7 and aluminium electrode 4, wherein heavy doping n type semiconductor layer 2 is the regional area that the solar cell front-surface field only is present in preceding electrode 6 belows of metal, other zone of solar cell front surface is covered by deielectric-coating 3, and the preceding electrode 6 of metal penetrates deielectric-coating 3 and contacts with the heavy doping n type semiconductor layer 2 of solar cell front surface.
Above-mentioned heavy doping n type semiconductor layer 2 is n type semiconductor layers of donor impurities such as heavy doping phosphorus, arsenic or antimony; Deielectric-coating 3 is single-layer dielectric film or multilayer dielectric film, the composition of single-layer dielectric film is silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride, and multilayer dielectric film is the combination in any of silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride single-layer dielectric film; The main component of electrode 6 is alloys that silver, copper, nickel, aluminium, tin or these metallic elements are formed before the metal.
Wherein a kind of making flow process of the aluminized emitter N-type solar battery that the present invention that shown in Figure 4 is proposes, concrete steps comprise:
(a) N type semiconductor substrate 1 is carried out surface-texturing and cleaning:, adopt rare NaOH or potassium hydroxide solution to make the light trapping structure of Pyramid at substrate surface for the n type single crystal silicon substrate; For N type polysilicon substrate, adopt nitric acid, hydrofluoric acid mixed solution to make the light trapping structure of pit dress at substrate surface.Subsequently, adopt the hydrochloric acid and the hydrofluoric acid of dilution that substrate is cleaned respectively.
(b) at N type semiconductor substrate 1 surface preparation deielectric-coating 3: using plasma strengthens the silicon nitride film of chemical vapour deposition (CVD) (PECVD) method behind the about 76nm of substrate front surface deposition one deck.Also can adopt hot oxygen method for oxidation to deposit the thin silicon oxide film of one deck earlier, adopt PECVD on silicon oxide film, to deposit one deck silicon nitride film again at substrate surface.
(c) at N type semiconductor substrate 1 back of the body surface preparation aluminium electrode 4: adopt aluminum electrode slurry and the oven dry of method for printing screen at the about 20 μ m of solar cell back of the body surface printing one deck.Perhaps adopt the thin aluminium electrode of evaporation or magnetically controlled sputter method deposition one deck.
(d) in the regional area printing N of battery front surface type heavy doping slurry 8 and oven dry: adopt N type heavily doped silicon slurry and the oven dry of silk screen printing, spraying or inkjet printing methods at solar cell front surface printing grid line shape.
(e) be printed on the regional type metal electrode slurry 5 and the oven dry of N type heavy doping slurry 8 at the battery front surface: adopt silk screen printing, spraying or inkjet printing methods being printed on printed silver electrode slurry on the zone of silicon slurry.
(f) high temperature sintering: adopt chain-type sintering furnace that solar cell is carried out high temperature sintering (500～1000 ℃).
The another kind of the aluminized emitter N-type solar battery that the present invention that shown in Figure 5 is proposes is made flow process, and concrete steps comprise:
(a) N type semiconductor substrate 1 is carried out surface-texturing and cleaning:, adopt rare NaOH or potassium hydroxide solution to make the light trapping structure of Pyramid at substrate surface for the n type single crystal silicon substrate; For N type polysilicon substrate, adopt nitric acid, hydrofluoric acid mixed solution to make the light trapping structure of pit dress at substrate surface.Subsequently, adopt the hydrochloric acid and the hydrofluoric acid of dilution that substrate is cleaned respectively.
(b) at N type semiconductor substrate 1 surface preparation deielectric-coating 3: using plasma strengthens the silicon nitride film of chemical vapour deposition (CVD) (PECVD) method behind the about 76nm of substrate front surface deposition one deck.Also can adopt hot oxygen method for oxidation to deposit the thin silicon oxide film of one deck earlier, adopt PECVD on silicon oxide film, to deposit one deck silicon nitride film again at substrate surface.
(c) at N type semiconductor substrate 1 back of the body surface preparation aluminium electrode 4: adopt aluminum electrode slurry and the oven dry of method for printing screen at the about 20 μ m of solar cell back of the body surface printing one deck.Perhaps adopt the thin aluminium electrode of evaporation or magnetically controlled sputter method deposition one deck.
(d) be mixed with the metal electrode sizing 9 and the oven dry of N type heavy doping slurry in the printing of solar cell front surface: adopt silk screen printing, spraying or inkjet printing methods, in the silver paste and the oven dry of the N type that the is mixed with heavy doping slurry of solar cell front surface printing grid line shape.
(e) high temperature sintering: adopt chain-type sintering furnace that solar cell is carried out high temperature sintering (500～1000 ℃).
In a word, the present invention has exemplified above-mentioned preferred implementation, but should illustrate that those skilled in the art can carry out various variations and remodeling.Therefore, unless such variation and remodeling have departed from scope of the present invention, otherwise all should be included in protection scope of the present invention.
Claims (10)
1. aluminized emitter N-type solar battery, mainly by N type semiconductor substrate (1), heavy doping n type semiconductor layer (2), deielectric-coating (3), aluminium electrode (4), electrode (6) and p type semiconductor layer (7) six parts are formed before the metal, the position relation of each several part from top to bottom is electrode (6) before the metal successively, deielectric-coating (3), heavy doping n type semiconductor layer (2), N type semiconductor substrate (1), p type semiconductor layer (7) and aluminium electrode (4), it is characterized in that, described heavy doping n type semiconductor layer (2) is the regional area that the solar cell front-surface field only is present in the preceding electrode (6) of metal below, other zone of solar cell front surface is covered by deielectric-coating (3), and the preceding electrode (6) of metal penetrates deielectric-coating (3) and contacts with the heavy doping n type semiconductor layer (2) of solar cell front surface.
2. aluminized emitter N-type solar battery according to claim 1 is characterized in that, described heavy doping n type semiconductor layer (2) is the n type semiconductor layer of donor impurities such as heavy doping phosphorus, arsenic or antimony.
3. aluminized emitter N-type solar battery according to claim 1 is characterized in that, described deielectric-coating (3) is single-layer dielectric film or multilayer dielectric film.
4. aluminized emitter N-type solar battery according to claim 3 is characterized in that, the composition of described single-layer dielectric film is silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride.
5. aluminized emitter N-type solar battery according to claim 3 is characterized in that, described multilayer dielectric film is the combination in any of silicon nitride, silica, amorphous silicon, aluminium oxide, titanium oxide, carborundum or magnesium fluoride single-layer dielectric film.
6. aluminized emitter N-type solar battery according to claim 1 is characterized in that, the main component of electrode (6) is the alloy that silver, copper, nickel, aluminium, tin or these metallic elements are formed before the described metal.
7. the manufacture method of the described aluminized emitter N-type solar battery of claim 1, it is characterized in that, adopt N type heavily doped silicon slurry to form the heavy doping n type semiconductor layer, and on the heavy doping n type semiconductor layer, make electrode before the metal at battery front surface local location.
8. the manufacture method of aluminized emitter N-type solar battery according to claim 7 is characterized in that, may further comprise the steps:
(a) the N type semiconductor substrate is carried out surface-texturing and carries out chemical cleaning;
(b) prepare deielectric-coating at the N type semiconductor substrate surface;
(c) at battery back of the body surface preparation aluminium electrode;
(d) in the also oven dry of the regional area printing N of battery front surface type heavy doping slurry;
(e) the battery front surface be printed on N type heavy doping slurry regional type metal electrode slurry and the oven dry;
(f) high temperature sintering.
9. the manufacture method of aluminized emitter N-type solar battery according to claim 7 is characterized in that, may further comprise the steps:
(a) the N type semiconductor substrate is carried out surface-texturing and carries out chemical cleaning;
(b) prepare deielectric-coating at the N type semiconductor substrate surface;
(c) at battery back of the body surface preparation aluminium electrode;
(d) with N type heavy doping slurry and regional area that is printed on the battery front surface after metal electrode sizing mixes simultaneously and oven dry;
(e) high temperature sintering.
10. according to Claim 8 or the manufacture method of 9 described aluminized emitter N-type solar batteries, it is characterized in that, described surface-texturing of step (a) and chemical cleaning step are meant with acid or alkali makes the light trapping structure of pyramid or pit shape at the N type semiconductor substrate surface, and with chemical its surface is cleaned; The described deielectric-coating of step (b) covers the front surface or the full surface of N type semiconductor substrate; The described aluminium electrode of step (c) is that the method by silk screen printing aluminum slurry, sputtered aluminum metal film or AM aluminum metallization metal film prepares; The main component of the described N type of step (d) heavy doping slurry is to mix phosphorus, mix arsenic or mix the silicon grain of antimony.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910214463A CN101764170A (en) | 2009-12-31 | 2009-12-31 | Aluminized emitter N-type solar battery and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910214463A CN101764170A (en) | 2009-12-31 | 2009-12-31 | Aluminized emitter N-type solar battery and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101764170A true CN101764170A (en) | 2010-06-30 |
Family
ID=42495224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910214463A Pending CN101764170A (en) | 2009-12-31 | 2009-12-31 | Aluminized emitter N-type solar battery and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101764170A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN102163649A (en) * | 2010-12-29 | 2011-08-24 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN102403377A (en) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | N-type substrate silicon solar cell and production method thereof |
| CN102403399A (en) * | 2011-07-30 | 2012-04-04 | 常州天合光能有限公司 | Preparation method and structure of one-film and multipurpose masked texturing solar cell |
| CN102637768A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Method for preparing EWT (Emitter Wrap Through) crystalline silicon solar cell |
| CN102709338A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Solar cell structure and preparation method thereof |
| CN104201250A (en) * | 2014-09-18 | 2014-12-10 | 百力达太阳能股份有限公司 | All Al-back surface field emitter N-type single crystal cell manufacturing method |
| CN105304742A (en) * | 2014-07-25 | 2016-02-03 | 韩华Qcells有限公司 | Solar serial battery pack and method for manufacturing the same |
| CN105826409A (en) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | Local back field N type solar cell, preparation method thereof, assembly and system |
-
2009
- 2009-12-31 CN CN200910214463A patent/CN101764170A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| US8338217B2 (en) | 2010-12-29 | 2012-12-25 | Au Optronics Corporation | Method of fabricating a solar cell |
| CN102163649A (en) * | 2010-12-29 | 2011-08-24 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| CN102163649B (en) * | 2010-12-29 | 2015-05-20 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| CN102637768B (en) * | 2011-02-15 | 2015-10-14 | 中山大学 | A kind of preparation method of emitter wraparound crystal silicon solar energy battery |
| CN102637768A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Method for preparing EWT (Emitter Wrap Through) crystalline silicon solar cell |
| CN102403399A (en) * | 2011-07-30 | 2012-04-04 | 常州天合光能有限公司 | Preparation method and structure of one-film and multipurpose masked texturing solar cell |
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN102403377A (en) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | N-type substrate silicon solar cell and production method thereof |
| CN102709338A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Solar cell structure and preparation method thereof |
| CN105304742A (en) * | 2014-07-25 | 2016-02-03 | 韩华Qcells有限公司 | Solar serial battery pack and method for manufacturing the same |
| CN104201250A (en) * | 2014-09-18 | 2014-12-10 | 百力达太阳能股份有限公司 | All Al-back surface field emitter N-type single crystal cell manufacturing method |
| CN105826409A (en) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | Local back field N type solar cell, preparation method thereof, assembly and system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101764170A (en) | Aluminized emitter N-type solar battery and production method thereof | |
| CN108987488B (en) | Silicon heterojunction solar cell and preparation method thereof | |
| KR20100096819A (en) | Back contact solar cell, and manufacturing method thereof | |
| CN106601855A (en) | Preparation method of double-side power generation heterojunction solar cell | |
| TW201240115A (en) | Solar cell and solar-cell module | |
| CN101447528A (en) | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting | |
| CN103681942B (en) | The preparation method of crystalline silicon SE solar cell piece and crystalline silicon SE solar cell piece | |
| CN101369612A (en) | Production method for implementing selective emitter solar battery | |
| KR101597532B1 (en) | The Manufacturing Method of Back Contact Solar Cells | |
| CN102800745A (en) | Method for producing rear passivation double-sided solar cell | |
| CN102956723B (en) | A kind of solar cell and preparation method thereof | |
| CN208548372U (en) | A kind of double-junction solar battery | |
| CN103383975A (en) | Two-sided passivation efficient heterojunction battery and manufacturing method thereof | |
| CN115274913B (en) | Preparation method of IBC solar cell with passivation contact structure, and cell, component and system | |
| CN102938429A (en) | Antireflection heterojunction solar cell and preparation method thereof | |
| CN111816714A (en) | Laser boron-doped back-passivated solar cell and preparation method thereof | |
| CN103956391B (en) | A kind of AZO/Si heterojunction solar cell and preparation method thereof | |
| CN111640826A (en) | Preparation method of battery conducting by utilizing selective contact | |
| CN102364692A (en) | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof | |
| CN103367513A (en) | Polycrystalline silicon thin film solar cell and preparation method thereof | |
| Geissbühler et al. | Metallization techniques and interconnection schemes for high efficiency silicon heterojunction PV | |
| CN102891209A (en) | Solar cell as well as preparation method and device thereof | |
| CN106653876A (en) | Solar cell | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| CN205960004U (en) | High -efficient heterojunction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100630 |