CN107195699A - One kind passivation contact solar cell and preparation method - Google Patents
One kind passivation contact solar cell and preparation method Download PDFInfo
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- CN107195699A CN107195699A CN201710564575.XA CN201710564575A CN107195699A CN 107195699 A CN107195699 A CN 107195699A CN 201710564575 A CN201710564575 A CN 201710564575A CN 107195699 A CN107195699 A CN 107195699A
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- 238000002161 passivation Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 63
- 239000011159 matrix material Substances 0.000 claims abstract description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- -1 phosphonium ion Chemical class 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000006385 ozonation reaction Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Abstract
The present invention relates to a kind of back junction solar battery and preparation method for being passivated contact, including N-type crystalline silicon matrix, preceding surface is followed successively by tunnel oxide, intrinsically polysilicon layer, n+ polysilicon regions, passivated reflection reducing membrane and the n+ metal electrodes of local doping from inside to outside, and the n+ metal electrodes are arranged on the n+ polysilicon regions of the local doping；The back surface of the N-type crystalline silicon matrix is followed successively by p+ doped regions, passivating film and p+ metal electrodes from inside to outside, and the p+ metal electrodes are arranged on the p+ doped regions.Its advantage is：N-type crystalline silicon base body front surface is using local n+ DOPOS doped polycrystalline silicon passivation layers, the back of the body junction battery covered relative to whole face n+ polysilicon layers, invalid absorption of the polysilicon layer to incident light can not only be reduced, lift the short circuit current flow of battery, and the passivation contact on preceding surface can be realized, the recombination rate on the preceding surface of battery is greatly reduced, open-circuit voltage and short circuit current flow is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to one kind passivation contact solar cell and preparation side
Method.
Background technology
The surface passivation of crystal silicon solar batteries is always the most important thing of design and optimization.From the only back of the body electric field of early stage
Passivation, to the passivation of front side silicon nitride silicon, then the passivation for introducing the dielectric layers such as silica, aluminum oxide, silicon nitride to the back side is local
The PERC/PERL designs of opening contacts.Although the problem of this structure respite passivating back, the back side is eradicated blunt
The problem of change, the high recombination rate of tapping is still present, and makes technique further complicated.The electricity of PERC and PERL structures
Although pond has possessed the surface passivation structure of comparatively perfect, but the contact range at the back side is limited in into opening area, except
The complexity for adding technique is outside one's consideration, and the process of perforate can also cause different degrees of using different technique to the silicon materials of surrounding
Damage, this also additionally increases the compound of Metal contact regions.Because perforate limits the transmission path of carrier, it is allowed to inclined
From the shortest path perpendicular to contact surface, simultaneously congestion at opening, increases the loss of fill factor, curve factor.In recent years, one kind could
Whole face passivation is realized, and turns into the focus of mechanism research without the technology of opening contacts, here it is passivation contact (Passivated
Contact) technology.
N-type carries on the back junction battery, is that under N-type substrate silicon chip, preceding surface forms n+ doped regions, back surface formation p+ transmittings
There is a n+/n knot (front-surface field) in pole, the smooth surface (preceding surface) of preceding contact battery.But, its doping concentration and junction depth
Good Ohmic contact can not be formed, the fill factor, curve factor and transformation efficiency for causing series resistance increase influence final.Before how allowing
Surface field can effectively suppress photo-generated carrier in the compound of preceding surface so that more photo-generated carriers reach the transmitting at the back side
Pole, is a huge challenge of current back of the body junction battery battery conversion efficiency lifting.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of back junction solar electricity of local passivation contact
Pond and preparation method.
A kind of part of the offer of the present invention is passivated the back junction solar battery of contact, and its technical scheme is：
One kind passivation contact solar cell, including N-type crystalline silicon matrix, it is characterised in that：The N-type crystalline silicon matrix
Preceding surface be followed successively by tunnel oxide, intrinsically polysilicon layer, n+ polysilicon regions, the passivated reflection reducing of local doping from inside to outside
Film and n+ metal electrodes, the n+ metal electrodes are arranged on the n+ polysilicon regions of the local doping；The N-type crystalline silicon
The back surface of matrix is followed successively by p+ doped regions, passivating film and p+ metal electrodes from inside to outside, and the p+ metal electrodes are arranged on
On the p+ doped regions.
Present invention also offers a kind of preparation method for being passivated contact solar cell, comprise the following steps：
(1) processing, the N-type crystalline silicon matrix, are doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively
The doping treatment mode on preceding surface is：In the preceding superficial growth tunnel oxide of N-type crystalline silicon matrix, and on tunnel oxide
Intrinsically polysilicon layer or intrinsic amorphous silicon layer are grown, then in intrinsically polysilicon layer or intrinsic amorphous silicon layer, optionally office
Phosphonium ion is injected in portion；The doping treatment mode of the N-type crystalline silicon matrix back surface is：Borosilicate is deposited by the way of APCVD
Glass, or inject by the way of ion implanting boron ion；
(2) N-type crystalline silicon matrix, is subjected to selection cleaning using weakly alkaline solution, the intrinsic many of non-implanted region are removed
Crystal silicon layer or intrinsic amorphous silicon layer, then made annealing treatment；After the completion of annealing, the n+ that local doping is formed on the preceding surface of silicon chip is more
Crystal silicon layer, in the emitter stage of silicon chip back surface formation p+ doping；
(3) passivated reflection reducing membrane, is formed on the preceding surface of N-type crystalline silicon matrix, is formed in the back surface of N-type crystalline silicon matrix
Passivating film；
(4) the n+ metal electrodes contacted with n+ doped region phase Ohmic contacts, are formed on the preceding surface of N-type crystalline silicon matrix,
Back surface formation and the p+ metal electrodes of p+ doped region phase Ohmic contacts in N-type crystalline silicon matrix, complete solar cell
Make.
Wherein, in step (1), preceding surface tunnel oxide is SiO2, thickness is 1-3nm, SiO2Growing method be high temperature
Thermal oxidation method, nitric acid oxidation method, Ozonation or CVD deposition method.
Wherein, in step (1), the side of intrinsically polysilicon layer or intrinsic amorphous silicon layer is grown on preceding surface tunnel oxide
Method is：N-type crystalline silicon matrix is put into LPCVD equipment, intrinsically polysilicon layer or sheet are grown on preceding surface tunnel oxide
Levy amorphous silicon layer.
Wherein, in step (1), in intrinsically polysilicon layer or intrinsic amorphous silicon layer, using ion implantation mask, selection
Property inject phosphorus atoms, the implantation dosage of its phosphorus atoms is 1 × 1015cm-2~8 × 1015cm-2。
Wherein, in step (1), when injecting phosphonium ion in intrinsically polysilicon layer or intrinsic amorphous silicon layer, in N-type crystalline silicon
Setting linear opening is set between base body front surface and ion beam on mask, mask, linear A/F is 200~
2000um。
Wherein, in step (2), the weakly alkaline solution is the KOH aqueous solution of concentration 1%, the peak temperature of annealing
For 800~1100 DEG C, annealing time is 30~200min, and environment source of the gas is N2And O2。
Wherein, in step (3), the preparation method of passivated reflection reducing membrane is utilized on the preceding surface of N-type crystalline silicon matrix
PECVD device deposits the SiN that a layer thickness is 60-80nmxDeielectric-coating；The preparation method of passivating film is, in N-type crystalline silicon matrix
Back surface using ALD equipment first deposit a layer thickness be 2-10nm Al2O3Deielectric-coating, then in Al2O3Sunk again on deielectric-coating
The SiN that product a layer thickness is 40~80nmxDeielectric-coating.
Wherein, in step (4), the preparation method of metal electrode is, by the method for silk-screen printing in N-type crystalline silicon matrix
Preceding surface n+doped region on print silver paste, silver-colored aluminium paste is printed on back surface p+ doped regions, is then sintered.
Wherein, carry out before step (1), making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix and back surface；N-type is brilliant
The resistivity of body silicon substrate is 0.5~15 Ω cm；The thickness of N-type crystalline silicon matrix is 50~300 μm.
The implementation of the present invention includes following technique effect：
A kind of passivation contact solar cell that the present invention is provided, by the way that N-type crystalline silicon base body front surface is used into local
N+ DOPOS doped polycrystalline silicon passivation layers, relative to whole face n+ polysilicon layers cover back of the body junction battery, can not only reduce polysilicon layer
Invalid absorption to incident light, so as to lift the short circuit current flow of battery, and can realize the passivation contact on preceding surface, drop significantly
The low recombination rate on the preceding surface of battery, improves open-circuit voltage and short circuit current flow.Prepared using doping treatment mode of the present invention
Back junction solar battery complete front and rear surfaces passivating film covering after its hidden open-circuit voltage (Implied Voc) it is reachable
More than 700mV, dark saturation current density J0<20fA cm-2, print electrode and be made after back of the body knot contact battery, the interior amount of its short-wave band
Sub- efficiency is up to more than 98%.
Brief description of the drawings
Fig. 1 is the battery structure section after the preparation method step one of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 2 is the battery structure section after the preparation method step 2 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 3 is the battery structure section after the preparation method step 3 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 4 is the battery structure section after the preparation method step 4 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 5 is the battery structure section after the preparation method step 5 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 6 is the battery structure section after the preparation method step 6 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 7 is the battery structure section after the preparation method step 7 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Fig. 8 is the battery structure section after the preparation method step 8 of passivation contact solar cell in the embodiment of the present invention
Schematic diagram.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Referring to shown in Fig. 1 to Fig. 8, a kind of preparation method for passivation contact solar cell that the present embodiment is provided, including
Following steps：
(1), selection N-type crystalline silicon matrix 10, and making to the preceding surface of N-type crystalline silicon matrix 10 and back surface at making herbs into wool
Reason；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；The thickness of N-type crystalline silicon matrix 10
Spend for 50~300 μm, preferably 120~200 μm；Complete the battery structure after this step as shown in Figure 1.
(2) the N-type crystalline silicon matrix 10 after step (1) processing, is put into APCVD (aumospheric pressure cvd) board
In, the use of gas is borine, forms one layer of Pyrex (BSG) 24 in back surface, as shown in Figure 2.
(3), one layer of tunnel oxide 15 of superficial growth, this implementation before the N-type crystalline silicon matrix 10 after step (2) processing
Tunnel oxide 15 is SiO in example2Layer.The method of growth tunnel oxide 15 has nitric acid oxidation method, high-temperature thermal oxidation method, dry type
Ozonation and wet type Ozonation.The present embodiment uses wet type Ozonation, and N-type crystalline silicon matrix 10 is put into
In ionized water, ozone is then passed through in deionized water so that ozone concentration reaches 20-50ppm, 30-50 DEG C of reaction temperature, when
Between be 5-20min, the thickness of the tunnel oxide 15 of growth is 1-3nm.Complete the battery structure after this step as shown in Figure 3.
(4) the N-type crystalline silicon matrix 10 after step (3) processing, is put into LPCVD equipment (low-pressure chemical vapor deposition)
In, in its preceding superficial growth intrinsically polysilicon layer 26, the thickness of intrinsically polysilicon layer is more than 100nm.Complete after this step
Battery structure is as shown in Figure 4.
(5) the N-type crystalline silicon matrix 10 after step (4) processing, is put into ion implantation device, the preceding surface of silicon chip and ion
Set between source and linear opening is provided with mask clamping fixture, mask, A/F is 200~2000um.In intrinsic polysilicon
Selective implantation phosphorus atoms on layer 26, form injection zone 28, and implantation dosage is 1 × 1015cm-2~8 × 1015cm-2, preferably 1 ×
1015cm-2~3 × 10cm-2.Complete the battery structure after this step as shown in Figure 5.
(6), by step (5) processing after N-type crystalline silicon matrix 10 be put into cleaning equipment, use concentration for 1% KOH water
Solution carries out selective cleaning, removes the intrinsic polysilicon and amorphous silicon layer in unimplanted region, is finally dried；Then by N
Type crystal silicon substrate 10, which is put into annealing furnace, carries out high annealing.The peak temperature of annealing is 800~1100 DEG C, during annealing
Between be 30~200min, environment source of the gas be N2And O2.After annealing, intrinsically polysilicon layer undoped region 26 is converted into intrinsic
Polysilicon layer 12, injection zone 28 is converted into n+ DOPOS doped polycrystalline silicons region 13.Complete such as Fig. 6 of the battery structure after this step institutes
Show.
(7), the preceding superficial growth passivated reflection reducing membrane 14 of the N-type crystalline silicon matrix 10 after step (6) processing, brilliant in N-type
The back surface growth of passivation film 18 of body silicon substrate 10.The passivated reflection reducing membrane 14 on preceding surface is SiNxFilm, its thickness is 60-80nm,
The passivating film 18 of back surface is SiO2、SiNxOr Al2O3It is one or more in deielectric-coating, first deposit a layer thickness using ALD equipment
For 2-10nm Al2O3Deielectric-coating, then in Al2O3The SiN that redeposited a layer thickness is 40~80nm on deielectric-coatingxDeielectric-coating.
Complete the battery structure after this step as shown in Figure 7.
(8), the back surface in N-type crystalline silicon matrix 10 prints p+ metal electrodes 22 using silver paste and dried, in N-type
The preceding surface of crystal silicon substrate 10 is using mixing aluminum paste printing n+ metal electrodes 20 and dried.Silver paste and mix aluminum paste and adopt
With the model commonly used in existing N-type cell technique.Complete the battery structure after this step as shown in Figure 8.
(9), the N-type crystalline silicon matrix 10 after step (8) processing is transmitted and is sintered into belt sintering stove, peak value is sintered
Temperature is 850-950 DEG C, that is, completes a kind of preparation for being passivated contact solar cell.
Preferably, the preceding surface of the N-type crystalline silicon matrix is N-type crystalline silicon surface；Or, the N-type crystalline silicon matrix
Preceding surface be that intrinsically polysilicon layer or intrinsic amorphous silicon layer are grown on the preceding surface tunnel oxide of N-type crystalline silicon；Work as institute
The preceding surface for stating N-type crystalline silicon matrix is that intrinsically polysilicon layer or sheet are grown on the preceding surface tunnel oxide of N-type crystalline silicon
When levying amorphous silicon layer, the preceding surface tunnel oxide of N-type is SiO2, thickness is 1-3nm, SiO2Growing method warmed to be high
Oxidizing process, nitric acid oxidation method, Ozonation or CVD deposition method.
It is shown in Figure 8, a kind of back contact solar cell of the present embodiment, including N-type crystalline silicon matrix 10, N-type crystalline substance
The preceding surface of body silicon substrate 10 is followed successively by tunnel oxide 15, intrinsically polysilicon layer 12, front surface n+ doped polycrystallines from inside to outside
Silicon area 13, passivated reflection reducing membrane 14 and n+ metal electrodes 20；The back surface of N-type crystalline silicon matrix 10 is followed successively by back of the body table from inside to outside
Face p+ doped regions 16, passivating film 18 and p+ metal electrodes 22, doped region include the He of front surface n+ DOPOS doped polycrystalline silicons region 13
N+ metal electrodes 20, back surface p+ doping are provided with back surface p+ doped regions 16, front surface n+ DOPOS doped polycrystalline silicons region 13
P+ metal electrodes 22 are provided with region 16.
Preferably, p+ metal electrodes 22 are silver-colored aluminium backplates, and n+ metal electrodes 2020 are silver alloy front electrodes.Passivation
Film 18 is SiO2、SiNxOr Al2O3One or more in deielectric-coating, the passivated reflection reducing membrane 14 on preceding surface is SiNx films, and its thickness is
60-80nm, passivating film 18 is SiO2, SiNx or Al2O3It is one or more in deielectric-coating, its Al2O3Deielectric-coating is 2-10nm, SiNx
Medium film thickness is 60-80nm.P+ metal electrodes 22 include the secondary grid (not shown) in back side main grid and the back side, back side main grid and
Back side pair grid constitute H type grid lines, the wherein wide 0.5-3mm of back side main grid, spaced set 3-6 roots, back side pair grid width 20-60um.n
+ metal electrode 20 includes the secondary grid (not shown) of front main grid and front, and the secondary grid of front main grid and front constitute H type grid lines,
The wherein wide 0.5-3mm of front main grid, spaced set 3-6 roots, front pair grid width 20-60um.
The passivation contact solar cell of said structure is after the passivating film covering of front and rear surfaces is completed, and after tested, its is hidden
Open-circuit voltage (Implied Voc) is up to more than 700mV, dark saturation current density J0<20fA cm-2, print electrode the back of the body being made
Contact after battery, the internal quantum efficiency of its short-wave band is up to more than 95%.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (10)
1. one kind passivation contact solar cell, including N-type crystalline silicon matrix, it is characterised in that：The N-type crystalline silicon matrix
Preceding surface is followed successively by tunnel oxide, intrinsically polysilicon layer, n+ polysilicon regions, the passivated reflection reducing membrane of local doping from inside to outside
With n+ metal electrodes, the n+ metal electrodes are arranged on the n+ polysilicon regions of the local doping；The N-type crystalline silicon base
The back surface of body is followed successively by p+ doped regions, passivating film and p+ metal electrodes from inside to outside, and the p+ metal electrodes are arranged on institute
State on p+ doped regions.
2. a kind of preparation method for being passivated contact solar cell, it is characterised in that：Comprise the steps of：
(1) table before processing, the N-type crystalline silicon matrix, is doped to the preceding surface of N-type crystalline silicon matrix and back surface respectively
The doping treatment mode in face is：Grown in the preceding superficial growth tunnel oxide of N-type crystalline silicon matrix, and on tunnel oxide
Intrinsically polysilicon layer or intrinsic amorphous silicon layer, it is optionally local to note then in intrinsically polysilicon layer or intrinsic amorphous silicon layer
Enter phosphonium ion；The doping treatment mode of the N-type crystalline silicon matrix back surface is：Pyrex are deposited by the way of APCVD,
Or boron ion is injected by the way of ion implanting；
(2) N-type crystalline silicon matrix, is subjected to selection cleaning using weakly alkaline solution, the intrinsic polysilicon of non-implanted region is removed
Layer or intrinsic amorphous silicon layer, then made annealing treatment；After the completion of annealing, the n+ polysilicons of local doping are formed on the preceding surface of silicon chip
Layer, in the emitter stage of silicon chip back surface formation p+ doping；
(3) passivated reflection reducing membrane, is formed on the preceding surface of N-type crystalline silicon matrix, in the back surface formation passivation of N-type crystalline silicon matrix
Film；
(4) the n+ metal electrodes contacted with n+ doped region phase Ohmic contacts, are formed on the preceding surface of N-type crystalline silicon matrix, in N-type
The back surface formation of crystal silicon substrate and the p+ metal electrodes of p+ doped region phase Ohmic contacts, complete the making of solar cell.
3. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Step (1)
In, the tunnel oxide on preceding surface is SiO2, thickness is 1-3nm, SiO2Growing method be high-temperature thermal oxidation method, nitric acid oxidation
Method, Ozonation or CVD deposition method.
4. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Step (1)
In, intrinsically polysilicon layer or the method for intrinsic amorphous silicon layer are grown on the tunnel oxide on preceding surface is：By N-type crystalline silicon base
Body is put into LPCVD equipment, and intrinsically polysilicon layer or intrinsic amorphous silicon layer are grown on the tunnel oxide on preceding surface.
5. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Step (1)
In, in intrinsically polysilicon layer or intrinsic amorphous silicon layer, using ion implantation mask, phosphorus atoms are selectively implanted, its phosphorus
The implantation dosage of atom is 1 × 1015cm-2~8 × 1015cm-2。
6. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Step (1)
In, when injecting phosphonium ion in intrinsically polysilicon layer or intrinsic amorphous silicon layer, N-type crystalline silicon base body front surface and ion beam it
Between setting linear opening is set on mask, mask, linear A/F is 200~2000um.
7. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Step (2)
In, the weakly alkaline solution is the KOH aqueous solution of concentration 1%, and the peak temperature of annealing is 800~1100 DEG C, during annealing
Between be 30~200min, environment source of the gas be N2And O2。
8. according to a kind of preparation method of any described passivation contact solar cell of claim 2~6, it is characterised in that：
In step (3), the preparation method of passivated reflection reducing membrane is to deposit one layer using PECVD device on the preceding surface of N-type crystalline silicon matrix
Thickness is 60-80nm SiNxDeielectric-coating；The preparation method of passivating film is to be set in the back surface of N-type crystalline silicon matrix using ALD
The Al that standby first deposition a layer thickness is 2-10nm2O3Deielectric-coating, then in Al2O3On deielectric-coating redeposited a layer thickness be 40~
80nm SiNxDeielectric-coating.
9. according to a kind of preparation method of any described passivation contact solar cell of claim 2~6, it is characterised in that：
In step (4), the preparation method of metal electrode is, by the method for silk-screen printing N-type crystalline silicon matrix preceding surface n+mix
Silver paste is printed on miscellaneous region, silver-colored aluminium paste is printed on back surface p+ doped regions, is then sintered.
10. a kind of preparation method for being passivated contact solar cell according to claim 2, it is characterised in that：Walked
Suddenly before (1), making herbs into wool processing is made to the preceding surface of N-type crystalline silicon matrix and back surface；The resistivity of N-type crystalline silicon matrix is
0.5~15 Ω cm；The thickness of N-type crystalline silicon matrix is 50~300 μm.
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| CN111180551A (en) * | 2020-01-02 | 2020-05-19 | 浙江晶科能源有限公司 | Selective emitter solar cell and preparation method thereof |
| CN111416017A (en) * | 2020-03-26 | 2020-07-14 | 泰州中来光电科技有限公司 | Preparation method of passivated contact solar cell |
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| CN111628050B (en) * | 2020-06-11 | 2021-08-03 | 常州时创能源股份有限公司 | Method for realizing electronic local passivation contact, crystalline silicon solar cell and preparation method thereof |
| CN111628050A (en) * | 2020-06-11 | 2020-09-04 | 常州时创能源股份有限公司 | Method for realizing electronic local passivation contact, crystalline silicon solar cell and preparation method thereof |
| CN111725359A (en) * | 2020-06-17 | 2020-09-29 | 泰州中来光电科技有限公司 | Preparation method of passivated contact solar cell |
| US11901467B2 (en) | 2020-10-30 | 2024-02-13 | Zhejiang Jinko Solar Co., Ltd. | Solar cell |
| CN112701174A (en) * | 2020-12-29 | 2021-04-23 | 泰州中来光电科技有限公司 | Back emitter passivation contact battery and preparation method, assembly and system thereof |
| CN112885924A (en) * | 2021-02-05 | 2021-06-01 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113611755A (en) * | 2021-08-06 | 2021-11-05 | 无锡琨圣智能装备股份有限公司 | Local passivation contact IBC battery structure and preparation method thereof |
| WO2023072164A1 (en) * | 2021-10-27 | 2023-05-04 | 天合光能股份有限公司 | Solar cell |
| WO2023072165A1 (en) * | 2021-10-27 | 2023-05-04 | 天合光能股份有限公司 | Passivated contact solar cell |
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