WO2021203813A1 - P-type passivating contact solar cell and preparation method therefor - Google Patents

P-type passivating contact solar cell and preparation method therefor Download PDF

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WO2021203813A1
WO2021203813A1 PCT/CN2021/074602 CN2021074602W WO2021203813A1 WO 2021203813 A1 WO2021203813 A1 WO 2021203813A1 CN 2021074602 W CN2021074602 W CN 2021074602W WO 2021203813 A1 WO2021203813 A1 WO 2021203813A1
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layer
type
silicon substrate
preparing
passivation
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PCT/CN2021/074602
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French (fr)
Chinese (zh)
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廖晖
马玉超
单伟
何胜
徐伟智
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浙江正泰太阳能科技有限公司
海宁正泰新能源科技有限公司
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Publication of WO2021203813A1 publication Critical patent/WO2021203813A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This application relates to the technical field of solar cells, and more specifically, to a P-type passivation contact solar cell and a preparation method thereof.
  • the full passivation contact technology is usually used on the P-type silicon front surface, and the passivation layer is superimposed to realize the cell preparation.
  • an SiO 2 tunneling layer and a doped polysilicon layer are arranged on the entire front surface of the P-type silicon, and a passivation layer is arranged on the surface of the polysilicon layer.
  • the polysilicon layer has parasitic losses to light, the polysilicon layer will Part of the sunlight irradiated on the battery is absorbed and converted into heat energy, which will reduce the utilization rate of sunlight of the P-type passivation contact solar cell, thereby reducing the current density and conversion efficiency of the P-type passivation contact solar cell.
  • the purpose of this application is to provide a P-type passivated contact solar cell and a preparation method thereof, which are used to improve the utilization rate of the P-type passivated contact solar cell to sunlight, so as to improve the P-type passivated contact solar cell The current density and conversion efficiency.
  • a method for preparing a P-type passivation contact solar cell including:
  • the diffusion deposition layer at the position for preparing the front metal gate line is removed, and the SiO 2 tunneling layer is prepared at the position for preparing the front metal gate line, and an N-type is provided on the surface of the SiO 2 tunneling layer.
  • a first passivation layer is deposited on the surface of the N+ layer and the surface of the N-type passivation contact structure, a second passivation layer is deposited on the back surface of the P-type silicon substrate, and the second passivation layer is Bare treatment to expose the position where the back surface of the P-type silicon substrate is used to prepare the back electric field;
  • a front metal gate line is prepared on the N-type polysilicon layer, and a back electric field is prepared on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
  • this application only provides an N-type polysilicon layer at the position used to prepare the front metal gate line, but not when it is not used to prepare the front metal gate.
  • the N-type polysilicon layer is not provided at the position of the line to reduce the contact resistance and recombination rate of the front metal gate line through the formed N-type passivation contact structure, increase the open circuit voltage, and minimize the effect of the N-type polysilicon layer on the sun.
  • the loss caused by the absorption of light can improve the utilization rate of sunlight of the P-type passivation contact solar cell, and then increase the short-circuit current density and conversion efficiency of the P-type passivation contact solar cell.
  • removing the diffusion deposition layer at the position for preparing the front metal gate line includes:
  • the method further includes:
  • the mask layer provided on the surface of the N+ layer is removed.
  • an N-type polycrystalline silicon layer is provided on the surface of the SiO 2 tunneling layer, wherein, while the N-type polycrystalline silicon layer is provided, the diffusion deposition layer is formed into an N+ layer, including:
  • the P-type silicon substrate is placed in an LPCVD deposition furnace, an N-type amorphous silicon layer is formed at the position for preparing the front electrode by in-situ doping, and the N-type amorphous silicon layer is annealed , So that the N-type amorphous silicon layer is crystallized into the N-type polycrystalline silicon layer, and the diffusion deposition layer is advanced by annealing the N-type amorphous silicon layer to form the N+ layer .
  • the above-mentioned processing method can avoid damage to the P-type silicon substrate caused by multiple high-temperature treatments.
  • the method further includes:
  • the diffusion deposition pretreatment is performed on the front surface of the P-type silicon substrate after texturing to obtain the diffusion deposition layer for forming the N+ layer, including:
  • a diffusion furnace is used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain a phosphorus source layer for forming the N+ layer; wherein the temperature of the diffusion deposition is 770-790°C, and the small nitrogen flow rate is 700- 900sccm, the time is 500-800s, to ensure that the square resistance of the N+ layer formed after annealing of the N-type amorphous silicon under the metal gate line is 90-180 ⁇ .sq -1 ;
  • the formation of an N-type amorphous silicon layer at the position for preparing the front metal gate line by in-situ doping includes:
  • N-type amorphous silicon layer with a thickness of 50-200 nm and a square resistance of 30-70 ⁇ sq -1 is formed at the position for preparing the front metal gate line by in-situ doping.
  • the method further includes:
  • the surface of the P-type silicon substrate for preparing the front metal gate line is polished with an alkaline solution, so that a polished planar structure is formed on the surface of the P-type silicon substrate for preparing the front metal gate line.
  • the method further includes:
  • the P-type silicon substrate is cleaned with an HCl solution.
  • a P-type passivation contact solar cell includes a P-type silicon substrate, an N+ layer located on the front surface of the P-type silicon substrate, and located at a position for preparing front metal gate lines and connected to the P-type silicon substrate.
  • SiO 2 tunneling layer in contact with the bottom , an N-type polysilicon layer on the surface of the SiO 2 tunneling layer, a first passivation layer on the surface of the N+ layer, and a front metal gate on the surface of the N-type polysilicon layer Line, a second passivation layer located on the back surface of the P-type silicon substrate, a back surface located on the surface of the second passivation layer and in contact with the position on the back surface of the P-type silicon substrate for preparing a back electric field Electric field, wherein the SiO 2 tunnel layer and the N-type polysilicon layer jointly form an N-type passivation contact structure.
  • the first passivation layer is a SiN X layer
  • the second passivation layer includes an AlO X layer in contact with the back surface of the P-type silicon substrate, and SiN located on the outer surface of the AlO X layer. X layer.
  • the present application provides a P-type passivation contact solar cell and a preparation method thereof, wherein the preparation method includes: performing diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain the To form a diffusion deposition layer of the N+ layer; remove the diffusion deposition layer at the position used to prepare the front metal gate line, and prepare an SiO 2 tunneling layer at the position used to prepare the front metal gate line, and tunnel through the SiO 2
  • An N-type polysilicon layer is provided on the surface of the layer to obtain an N-type passivation contact structure at the position used to prepare the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer; in the N+ layer
  • a first passivation layer is deposited on the surface and the surface of the N-type passivation contact structure, a second passivation layer is deposited on the back surface of the P-type silicon substrate, and the second passivation layer is exposed to the back of the P-type
  • the technical solution of the present application has the following beneficial technical effects: only the SiO 2 tunneling layer and the N-type polysilicon layer are provided at the position where the front surface of the P-type silicon substrate is used to prepare the front metal gate line, and No N-type passivation contact structure is provided on the remaining area of the front surface of the P-type silicon substrate to reduce the absorption of sunlight by the N-type polysilicon layer, thereby increasing the utilization rate of the P-type passivation contact solar cell to sunlight, thereby increasing P Type passivation contacts the current density and conversion efficiency of solar cells.
  • FIG. 1 is a flowchart of a manufacturing method of a P-type passivation contact solar cell provided by an embodiment of the application;
  • FIG. 2 is a schematic structural diagram of a P-type passivation contact solar cell provided by an embodiment of the application.
  • the reference signs are: P-type silicon substrate 1, N+ layer 2, SiO 2 tunneling layer 3, first passivation layer 4, N-type polysilicon layer 5, front metal gate line 6, second passivation layer 7, back surface Electric field 8, AlO X layer 71, SiN X layer 72.
  • FIG. 1 shows a flow chart of a method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application.
  • the method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application can be include:
  • S11 Perform diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain a diffusion deposition layer for forming an N+ layer.
  • the oxygen content can be controlled below 7ppma
  • the carbon content can be controlled below 1ppma
  • the resistivity can be controlled within 0.3-1.2 ⁇ cm, so that high-quality P-type silicon substrates can be selected. Bottom, so as to facilitate the preparation of high-quality P-type passivation contact solar cells.
  • the P-type silicon substrate mentioned here may specifically be a P-type single crystal silicon substrate or a P-type polycrystalline silicon substrate.
  • KOH solution is used to texturize the front surface of the selected P-type silicon substrate to obtain a pyramid suede structure, wherein the texturing thinning can be 0.30-0.35g.
  • phosphorus diffusion deposition pretreatment can be performed on the front surface of the P-type silicon substrate to obtain a diffusion deposition layer for forming the N+ layer on the front surface of the P-type silicon substrate (specifically, it may be a phosphorus source Form), thereby facilitating the formation of a PN junction.
  • S12 Remove the diffusion deposition layer at the position used to prepare the front metal gate line, prepare an SiO 2 tunneling layer at the position used to prepare the front metal gate line, and provide an N-type polysilicon layer on the surface of the SiO 2 tunneling layer , In order to obtain the N-type passivation contact structure at the position for preparing the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer.
  • the diffusion deposition layer on the front surface of the P-type silicon substrate for preparing the front metal gate lines can be removed, and then the P-type silicon substrate can be placed In the oxidation furnace, a dense SiO 2 tunneling layer (the thickness can be 0.5-2nm) is deposited at the position where the diffusion deposition layer is removed, that is, the front surface of the P-type silicon substrate is used to prepare the front metal gate line depositing a layer at a position a dense SiO 2 tunneling layer, and a surface layer can be worn SiO 2 tunnel (i.e., through the SiO 2 surface layer at a position for preparing the tunnel front metal gate line) of N-type polysilicon layer (particularly The N-type polysilicon layer can be obtained by doping with phosphorus , so that the N-type passivation contact structure is formed at the position of the front metal gate line through the SiO 2 tunneling layer and the N-type polysilicon layer, so as to realize the
  • the diffusion deposition layer can be advanced to the P-type silicon substrate to form an N+ layer, so as to avoid multiple high-temperature treatments from damaging the P-type silicon substrate.
  • this application only provides an N-type polysilicon layer at the position used to prepare the front metal gate line, but not when it is not used to prepare the front metal gate.
  • the N-type polysilicon layer is not provided at the position of the line to reduce the contact resistance and recombination rate of the front metal gate line through the formed N-type passivation contact structure, increase the open circuit voltage, and minimize the effect of the N-type polysilicon layer on the sun.
  • the loss caused by the absorption of light can improve the utilization rate of sunlight by the P-type passivation contact solar cell, and then increase the short-circuit current density and conversion efficiency of the P-type passivation contact solar cell.
  • S13 Deposit a first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure, deposit a second passivation layer on the back surface of the P-type silicon substrate, and expose the second passivation layer to remove the P The position on the back surface of the silicon substrate used to prepare the back electric field is exposed.
  • a first passivation layer can be deposited on the surface of the N+ layer and the surface of the N-type passivation contact structure, and at the same time, a second passivation film layer can be deposited on the back surface of the P-type silicon substrate , In order to passivate the back surface through the second passivation film layer, after that, the second passivation at the preset position (specifically the position on the back surface of the P-type silicon substrate for preparing the back electric field) can be performed. The passivation layer is exposed to expose the position where the surface of the P-type silicon substrate is used to prepare the back surface electric field, thereby facilitating the preparation of the back surface electric field in contact with the back surface of the P-type silicon substrate at the exposed position.
  • the exposure treatment can be performed at the preset position by laser drilling, so as to improve the accuracy of the exposure treatment.
  • S14 Prepare a front metal gate line on the N-type polysilicon layer, and prepare a back electric field on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
  • the front metal grid lines can be prepared on the N-type polysilicon layer by screen printing, and the back electrode can be prepared on the back surface of the P-type silicon substrate by the screen printing method to obtain the P-type passivation. Chemical contact with solar cells.
  • a mask layer is provided on the surface of the diffusion deposition layer, and a laser is used to remove the mask layer at the position used to prepare the front metal gate line;
  • the first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure may further include:
  • a mask layer can be provided on the surface of the diffusion deposition layer, and the mask layer at the position for preparing the front metal gate line can be removed by laser opening (wherein, the laser opening The width of the mask layer can be 100-200 ⁇ m).
  • This method of using laser to remove the mask layer has relatively high precision and good controllability, and can avoid damage to the P-type silicon substrate as much as possible.
  • an SiO 2 tunnel layer can be prepared at the position where the mask layer is removed, and an N-type polysilicon layer can be provided on the surface of the SiO 2 tunnel layer .
  • standard RCA cleaning can be used to remove the mask layer provided on the surface of the N+ layer to obtain a clean surface, so as to prevent impurities from affecting the preparation of the first passivation layer.
  • the provided mask layer can protect positions other than those used to prepare the front metal gate lines, so as to avoid the remaining positions on the surface of the P-type silicon substrate (specifically, not used to prepare the front metal gate lines).
  • SiO x N y can be used as a mask layer, and PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) technology can be used to prepare the mask layer, and its thickness can be 30-70 nm, So that it can play a better protective role.
  • the P-type silicon substrate from which the mask layer located at the position for preparing the front metal gate line has been removed can be placed in LPCVD (Low Pressure Chemical Vapor Deposition, Low pressure chemical vapor deposition method) in a furnace to prepare a SiO 2 tunneling layer in an LPCVD furnace.
  • LPCVD Low Pressure Chemical Vapor Deposition, Low pressure chemical vapor deposition method
  • the N-type amorphous silicon layer can be prepared in the above-mentioned LPCVD furnace.
  • An embodiment of the present application provides a method for preparing a P-type passivation contact solar cell.
  • An N-type polysilicon layer is provided on the surface of the SiO 2 tunneling layer, wherein the N-type polysilicon layer is provided while the diffusion deposition layer forms an N+ layer,
  • the P-type silicon substrate is placed in the LPCVD deposition furnace, and an N-type amorphous silicon layer is formed at the position for preparing the front metal gate line by in-situ doping technology, and the N-type amorphous silicon layer is annealed,
  • the N-type amorphous silicon layer is crystallized into an N-type polysilicon layer, and the diffusion deposition layer is advanced by annealing the N-type amorphous silicon layer to form an N+ layer.
  • the P-type silicon substrate When setting the N-type polysilicon layer, the P-type silicon substrate can be placed in the LPCVD deposition furnace, and an N-type amorphous silicon layer (specific It can be an N-type amorphous silicon layer doped with phosphorus), and then, the N-type amorphous silicon layer can be annealed at a high temperature (passivation performance is activated by annealing), so that the N-type amorphous silicon layer can be crystallized and An N-type polysilicon layer is obtained, where the high-temperature annealing temperature may be 880-950° C., and the time may be 20-40 min.
  • the high-temperature annealing temperature may be 880-950° C., and the time may be 20-40 min.
  • the annealing treatment of the amorphous N-type amorphous silicon layer can not only crystallize it, but also promote the diffusion deposition layer obtained by the diffusion deposition pretreatment to avoid multiple high-temperature treatments on the P-type silicon substrate. Cause damage.
  • the N-type amorphous silicon layer can also be formed by methods such as ion implantation and post-diffusion doping.
  • Method for preparing passivated P-type contact solar cell of the embodiment of the present application provides, after wear of the surface layer is provided in the N-type polysilicon layer SiO 2 tunnel, it may further comprise:
  • a protective layer is printed on the surface of the N-type polysilicon layer to protect the N-type polysilicon layer with the protective layer;
  • HF is removed using n-type silicon substrate P and the back surface of the SiO 2 region other than the surface of the protective layer of SiO 2, and alkali plating solution around the polysilicon is removed;
  • a protective layer can be printed on the surface of the N-type polysilicon layer.
  • a wax layer can be printed on the surface of the N-type polysilicon layer by screen printing technology to use the printed protective layer.
  • the N-type polysilicon layer and the SiO 2 tunneling layer are protected, so as to avoid damage to the N-type passivation contact structure during subsequent processing.
  • the width of the protective layer (specifically 200-250 ⁇ m) may be greater than the width (specifically 20-40 ⁇ m) for the front metal gate line, so that the protective layer can play a better protective effect.
  • the P-type silicon substrate can be subjected to HF-dip to use HF to remove the SiO 2 and SiO 2 on the back surface of the P-type silicon substrate except for the protective layer, while retaining the SiO 2 on the front surface.
  • Mask layer and PSG phosphosilicate glass
  • the P-type silicon substrate can be placed in KOH alkaline solution, and certain additives can be added to etch the front surface of the P-type silicon substrate except for the protective layer
  • the N-type polysilicon layer around the area and the N-type polysilicon layer around the back surface to avoid the effect of the N-type polysilicon layer around the plating on the efficiency, thereby improving the conversion efficiency of the P-type passivation contact solar cell.
  • the protective layer can be removed (for the printed wax layer, organic solvents can be used to clean and remove) After that, standard RCA cleaning can be used to remove the mask layer set on the surface of the N+ layer to obtain a clean surface.
  • the embodiment of the present application provides a method for preparing a P-type passivation contact solar cell, which performs diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain a diffusion deposition layer for forming an N+ layer ,
  • Can include:
  • a diffusion furnace is used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain a phosphorus source layer for forming the N+ layer; wherein the temperature of the diffusion deposition is 770-790°C, and the small nitrogen flow rate is 700- 900sccm, the time is 500-800s, to ensure that the square resistance of the N+ layer formed after annealing of the N-type amorphous silicon under the metal gate line is 90-180 ⁇ .sq -1 ;
  • Forming an N-type amorphous silicon layer at the position for preparing the front metal gate line by in-situ doping may include:
  • N-type amorphous silicon layer with a thickness of 50-200 nm and a square resistance of 30-70 ⁇ sq -1 is formed at the position for preparing the front metal gate line by in-situ doping.
  • a diffusion furnace can be used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain an N+ layer, where the temperature of the diffusion deposition can be 770-790 °C, the small nitrogen flow rate is 700-900sccm, the time is 500-800s, to ensure that the square resistance of the formed N+ layer is 90-180 ⁇ .sq -1 , so as to obtain a relatively high-quality N+ layer; in the N-type polysilicon layer During preparation, the thickness of the prepared N-type polysilicon layer may be 50-200 nm to ensure that the square resistance of the amorphous silicon after annealing may be 30-70 ⁇ sq -1 .
  • the control of the diffusion deposition of the phosphorus source can achieve light doping at the position between the front metal gate lines, that is, to achieve
  • SE Selective Emitter
  • the surface of the P-type silicon substrate for preparing the front metal gate line is polished with an alkaline solution, so that a polished planar structure is formed at the position where the surface of the P-type silicon substrate is used for preparing the front metal gate line.
  • an alkaline solution (specifically a KOH solution can be used, the solution temperature can be 70-85°C, the KOH concentration can be 20-45%, and the reaction The time can be 100-400s) Polish the surface of the P-type silicon substrate where the front metal grid lines are prepared, so that a polished planar structure is formed at the position where the front surface of the P-type silicon substrate is used to prepare the front metal grid lines. Therefore, the SiO 2 tunneling layer can be prepared on the polished planar structure, thereby improving the passivation effect.
  • a KOH solution specifically a KOH solution can be used, the solution temperature can be 70-85°C, the KOH concentration can be 20-45%, and the reaction The time can be 100-400s
  • the P-type silicon substrate is cleaned with HCl solution.
  • the P-type silicon substrate After polishing the surface of the P-type silicon substrate with an alkaline solution for preparing the position of the front metal gate line, the P-type silicon substrate can be cleaned with an HCl solution to remove the residual alkali on the surface of the P-type silicon substrate. Solution, metal, etc., after which, SiO 2 tunnel layer and N-type amorphous silicon layer can be prepared.
  • the embodiment of the present application also provides a P-type passivation contact solar cell, see FIG. 2, which shows a schematic structural diagram of a P-type passivation contact solar cell provided by an embodiment of the present application, which may include a P-type silicon lining Bottom 1.
  • N+ layer located on the front surface of P-type silicon substrate 1, 2.
  • SiO 2 tunneling layer 3 located at the position for preparing front metal gate line 6 and in contact with P-type silicon substrate 1 , located on SiO 2
  • the polysilicon layer 5 forms an N-type passivation contact structure.
  • the SiO 2 tunneling layer 3 is located at the position for preparing the front metal gate line 6 and is in contact with the P-type silicon substrate 1.
  • the first passivation layer 4 is located on the surface of the N+ layer 2 and the surface of the N-type passivation contact structure
  • the N-type polysilicon layer 5 is located on the surface of the SiO2 tunneling layer 3
  • the second passivation layer 7 is located on the back surface of the P-type silicon substrate 1
  • the back electric field 8 is located on the first surface.
  • the surface of the second passivation layer 7 is in contact with the position on the back surface of the P-type silicon substrate 1 for preparing the back electric field 8.
  • the N-type polysilicon layer 5 can absorb sunlight, thereby increasing P
  • the solar cell's utilization rate of sunlight with type passivation contact can improve the current density and conversion efficiency of the P-type passivation contact solar cell.
  • An embodiment of the application provides a P-type passivation contact solar cell
  • the first passivation layer 4 is a SiN X layer
  • the second passivation layer 7 may include an AlO X layer in contact with the back surface of the P-type silicon substrate 1 71.
  • the SiN X layer 72 located on the outer surface of the AlO X layer 71.
  • the first passivation layer 4 may specifically be a SiN X layer
  • the second passivation layer 7 may specifically include an AlO X layer 71 in contact with the back surface of the P-type silicon substrate 1, located on the outer surface of the AlO X layer 71 and connected to the back surface.
  • the electric field 8 is in contact with the SiN X layer 72.
  • the performance data of the solar cell of this application and the control group (the only difference lies in that all the front surface of the substrate is provided with an N-type passivation contact structure) is as follows, and the data is based on the performance of the control group.

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Abstract

The invention relates to the technical field of solar cells and discloses a P-type passivating contact solar cell and a preparation method therefor. The method comprises: performing a diffusion deposition pretreatment on a front surface of a textured P-type silicon substrate to obtain a diffusion deposition layer for forming an N+ layer; removing the diffusion deposition layer at a position for preparing a front metal gate line, preparing an SiO2 tunneling layer at said position, arranging an N-type polysilicon layer on a surface of the SiO2 tunneling layer; forming an N+ layer from the diffusion deposition layer; depositing a first passivation layer on a surface of the N+ layer; depositing a second passivation layer on a rear surface of the P-type silicon substrate; preparing a front electrode on the N-type polysilicon layer; and preparing a back surface field on the rear surface of the P-type silicon substrate. In the present invention, an N-type passivating contact structure is provided at the position of the front surface of the substrate for preparing the front metal gate line, so as to reduce the absorption of sunlight by the N-type polysilicon layer, thereby improving the solar light utilization rate of the battery and further increasing the current density and conversion efficiency of the battery.

Description

一种P型钝化接触太阳能电池及其制备方法P-type passivation contact solar cell and preparation method thereof 技术领域Technical field
本申请涉及太阳能电池技术领域，更具体地说，涉及一种P型钝化接触太阳能电池及其制备方法。This application relates to the technical field of solar cells, and more specifically, to a P-type passivation contact solar cell and a preparation method thereof.
背景技术Background technique
钝化接触太阳能电池技术是由Fraunhofer研究提出并在之后得到广泛应用。The passivation contact solar cell technology was researched and put forward by Fraunhofer and has been widely used afterwards.
目前，在将钝化接触技术应用在P型衬底上以得到P型钝化接触太阳能电池时，通常是在P型硅正面采用全钝化接触技术，并叠加钝化层实现电池制备。具体地，是在P型硅的整个正表面设置SiO 2隧穿层和掺杂多晶硅层，并在多晶硅层表面设置钝化层，但是，由于多晶硅层对光存在寄生损失，因此，多晶硅层会吸收照射至电池上的部分太阳光而转换为热能，而这则会降低P型钝化接触太阳能电池对太阳光的利用率，从而会降低P型钝化接触太阳能电池的电流密度和转换效率。 At present, when the passivation contact technology is applied to the P-type substrate to obtain the P-type passivation contact solar cell, the full passivation contact technology is usually used on the P-type silicon front surface, and the passivation layer is superimposed to realize the cell preparation. Specifically, an SiO 2 tunneling layer and a doped polysilicon layer are arranged on the entire front surface of the P-type silicon, and a passivation layer is arranged on the surface of the polysilicon layer. However, because the polysilicon layer has parasitic losses to light, the polysilicon layer will Part of the sunlight irradiated on the battery is absorbed and converted into heat energy, which will reduce the utilization rate of sunlight of the P-type passivation contact solar cell, thereby reducing the current density and conversion efficiency of the P-type passivation contact solar cell.
综上所述，如何提高P型钝化接触太阳能电池对太阳光的利用率，以提高P型钝化接触太阳能电池的电流密度和转换效率，是目前本领域技术人员亟待解决的技术问题。In summary, how to improve the utilization rate of sunlight by the P-type passivation contact solar cell to improve the current density and conversion efficiency of the P-type passivation contact solar cell is a technical problem to be solved urgently by those skilled in the art.
发明内容Summary of the invention
有鉴于此，本申请的目的是提供一种P型钝化接触太阳能电池及其制备方法，用于提高P型钝化接触太阳能电池对太阳光的利用率，以提高P型钝化接触太阳能电池的电流密度和转换效率。In view of this, the purpose of this application is to provide a P-type passivated contact solar cell and a preparation method thereof, which are used to improve the utilization rate of the P-type passivated contact solar cell to sunlight, so as to improve the P-type passivated contact solar cell The current density and conversion efficiency.
为了实现上述目的，本申请提供如下技术方案：In order to achieve the above objectives, this application provides the following technical solutions:
一种P型钝化接触太阳能电池的制备方法，包括：A method for preparing a P-type passivation contact solar cell, including:
在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+层的扩散沉积层；Perform diffusion deposition pretreatment on the front surface of the textured P-type silicon substrate to obtain a diffusion deposition layer for forming an N+ layer;
去除用于制备正面金属栅线的位置处的所述扩散沉积层，并在用于制备正面金属 栅线的位置处制备SiO 2隧穿层，且在所述SiO 2隧穿层表面设置N型多晶硅层，以得到位于用于制备正面金属栅线的位置处的N型钝化接触结构；其中，在设置所述N型多晶硅层的同时使所述扩散沉积层形成N+层； The diffusion deposition layer at the position for preparing the front metal gate line is removed, and the SiO 2 tunneling layer is prepared at the position for preparing the front metal gate line, and an N-type is provided on the surface of the SiO 2 tunneling layer. A polysilicon layer to obtain an N-type passivation contact structure at a position for preparing the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer;
在所述N+层表面及所述N型钝化接触结构表面沉积第一钝化层，在所述P型硅衬底的背表面沉积第二钝化层，对所述第二钝化层进行裸露处理，以将所述P型硅衬底背表面用于制备背面电场的位置裸露出来；A first passivation layer is deposited on the surface of the N+ layer and the surface of the N-type passivation contact structure, a second passivation layer is deposited on the back surface of the P-type silicon substrate, and the second passivation layer is Bare treatment to expose the position where the back surface of the P-type silicon substrate is used to prepare the back electric field;
在所述N型多晶硅层上制备正面金属栅线，并在所述P型硅衬底背表面制备背面电场，以得到P型钝化接触太阳能电池。A front metal gate line is prepared on the N-type polysilicon layer, and a back electric field is prepared on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
相较于现有技术中在P型硅衬底的整个表面制备N型多晶硅层，本申请仅在用于制备正面金属栅线的位置处设置N型多晶硅层，而在不用于制备正面金属栅线的位置处不设置N型多晶硅层，以在通过所形成的N型钝化接触结构降低正面金属栅线的接触电阻及复合速率，提升开路电压的同时，尽量降低因N型多晶硅层对太阳光的吸收而造成的损失，以提高P型钝化接触太阳能电池对太阳光的利用率，进而增加P型钝化接触太阳能电池的短路电流密度和转换效率。Compared with the prior art that prepares an N-type polysilicon layer on the entire surface of a P-type silicon substrate, this application only provides an N-type polysilicon layer at the position used to prepare the front metal gate line, but not when it is not used to prepare the front metal gate. The N-type polysilicon layer is not provided at the position of the line to reduce the contact resistance and recombination rate of the front metal gate line through the formed N-type passivation contact structure, increase the open circuit voltage, and minimize the effect of the N-type polysilicon layer on the sun. The loss caused by the absorption of light can improve the utilization rate of sunlight of the P-type passivation contact solar cell, and then increase the short-circuit current density and conversion efficiency of the P-type passivation contact solar cell.
优选的，去除用于制备正面金属栅线的位置处的所述扩散沉积层，包括：Preferably, removing the diffusion deposition layer at the position for preparing the front metal gate line includes:
在所述扩散沉积层表面设置掩膜层，并利用激光去除用于制备正面金属栅线的位置处的所述掩膜层；Disposing a mask layer on the surface of the diffusion deposition layer, and using a laser to remove the mask layer at the position for preparing the front metal gate line;
相应地，在所述N+层表面及所述N型钝化接触结构表面沉积第一钝化层之前，还包括：Correspondingly, before depositing a first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure, the method further includes:
去除所述N+层表面所设置的所述掩膜层。The mask layer provided on the surface of the N+ layer is removed.
优选的，在所述SiO 2隧穿层表面设置N型多晶硅层，其中，在设置所述N型多晶硅层的同时使所述扩散沉积层形成N+层，包括： Preferably, an N-type polycrystalline silicon layer is provided on the surface of the SiO 2 tunneling layer, wherein, while the N-type polycrystalline silicon layer is provided, the diffusion deposition layer is formed into an N+ layer, including:
将所述P型硅衬底放置在LPCVD沉积炉中，通过原位掺杂在用于制备正面电极的位置处形成N型非晶硅层，并对所述N型非晶硅层进行退火处理，以使所述N型非晶硅层晶化为所述N型多晶硅层，且通过对所述N型非晶硅层的退火处理对所述扩散沉积层进行推进，以形成所述N+层。The P-type silicon substrate is placed in an LPCVD deposition furnace, an N-type amorphous silicon layer is formed at the position for preparing the front electrode by in-situ doping, and the N-type amorphous silicon layer is annealed , So that the N-type amorphous silicon layer is crystallized into the N-type polycrystalline silicon layer, and the diffusion deposition layer is advanced by annealing the N-type amorphous silicon layer to form the N+ layer .
上述处理方式可以避免多次高温处理对P型硅衬底造成损伤。The above-mentioned processing method can avoid damage to the P-type silicon substrate caused by multiple high-temperature treatments.
优选的，在所述SiO 2隧穿层表面设置N型多晶硅层之后，还包括： Preferably, after arranging an N-type polysilicon layer on the surface of the SiO 2 tunneling layer, the method further includes:
在所述N型多晶硅层表面印刷保护层，以利用所述保护层对所述N型多晶硅层进行保护；Printing a protective layer on the surface of the N-type polycrystalline silicon layer, so as to protect the N-type polycrystalline silicon layer by using the protective layer;
利用HF去除所述P型硅衬底正表面除所述保护层之外的区域的SiO 2和背表面的SiO 2，并利用碱溶液去除绕镀多晶硅； With HF removal area of the P-type silicon substrate other than the front surface of the protective layer of SiO 2 and the back surface of the SiO 2 is removed using an alkaline solution around the plating polysilicon;
去除所述保护层。Remove the protective layer.
优选的，在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+层的扩散沉积层，包括：Preferably, the diffusion deposition pretreatment is performed on the front surface of the P-type silicon substrate after texturing to obtain the diffusion deposition layer for forming the N+ layer, including:
利用扩散炉在制绒后的P型硅衬底的正表面沉积磷源，以得到用于形成N+层的磷源层；其中，扩散沉积的温度为770-790℃，小氮流量为700-900sccm，时间为500-800s，以确保金属栅线下N型非晶硅退火后所形成的所述N+层的方阻为90-180Ω.sq -1； A diffusion furnace is used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain a phosphorus source layer for forming the N+ layer; wherein the temperature of the diffusion deposition is 770-790°C, and the small nitrogen flow rate is 700- 900sccm, the time is 500-800s, to ensure that the square resistance of the N+ layer formed after annealing of the N-type amorphous silicon under the metal gate line is 90-180Ω.sq -1 ;
通过原位掺杂在用于制备正面金属栅线的位置处形成N型非晶硅层，包括：The formation of an N-type amorphous silicon layer at the position for preparing the front metal gate line by in-situ doping includes:
通过原位掺杂在用于制备正面金属栅线的位置处形成厚度为50-200nm、方阻为30-70Ω.sq -1的N型非晶硅层。 An N-type amorphous silicon layer with a thickness of 50-200 nm and a square resistance of 30-70Ω·sq -1 is formed at the position for preparing the front metal gate line by in-situ doping.
优选的，在利用激光去除用于制备正面金属栅线的位置处的所述掩膜层之后，还包括：Preferably, after using a laser to remove the mask layer at the position for preparing the front metal grid line, the method further includes:
利用碱溶液对所述P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理，以使所述P型硅衬底表面用于制备正面金属栅线的位置处形成抛光平面结构。The surface of the P-type silicon substrate for preparing the front metal gate line is polished with an alkaline solution, so that a polished planar structure is formed on the surface of the P-type silicon substrate for preparing the front metal gate line.
优选的，在利用碱溶液对所述P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理之后，还包括：Preferably, after the surface of the P-type silicon substrate is polished with an alkali solution for preparing the position of the front metal gate line, the method further includes:
利用HCl溶液对所述P型硅衬底进行清洗。The P-type silicon substrate is cleaned with an HCl solution.
一种P型钝化接触太阳能电池，包括P型硅衬底、位于所述P型硅衬底正表面的N+层、位于用于制备正面金属栅线的位置处且与所述P型硅衬底相接触的SiO 2隧穿层、位于所述SiO 2隧穿层表面的N型多晶硅层、位于所述N+层表面的第一钝化层、位于所述N型多晶硅层表面的正面金属栅线、位于所述P型硅衬底背表面的第二钝化层、位于所述第二钝化层表面且与所述P型硅衬底背表面用于制备背面电场的位置相接触的背面电场，其中，所述SiO 2隧穿层和所述N型多晶硅层共同形成N型钝化接触结构。 A P-type passivation contact solar cell includes a P-type silicon substrate, an N+ layer located on the front surface of the P-type silicon substrate, and located at a position for preparing front metal gate lines and connected to the P-type silicon substrate. SiO 2 tunneling layer in contact with the bottom , an N-type polysilicon layer on the surface of the SiO 2 tunneling layer, a first passivation layer on the surface of the N+ layer, and a front metal gate on the surface of the N-type polysilicon layer Line, a second passivation layer located on the back surface of the P-type silicon substrate, a back surface located on the surface of the second passivation layer and in contact with the position on the back surface of the P-type silicon substrate for preparing a back electric field Electric field, wherein the SiO 2 tunnel layer and the N-type polysilicon layer jointly form an N-type passivation contact structure.
优选的，所述第一钝化层为SiN X层，所述第二钝化层包括与所述P型硅衬底背表面相接触的AlO X层、位于所述AlO X层外表面的SiN X层。 Preferably, the first passivation layer is a SiN X layer, and the second passivation layer includes an AlO X layer in contact with the back surface of the P-type silicon substrate, and SiN located on the outer surface of the AlO X layer. X layer.
综上，本申请提供了一种P型钝化接触太阳能电池及其制备方法，其中，该制备方法包括：在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+ 层的扩散沉积层；去除用于制备正面金属栅线的位置处的扩散沉积层，并在用于制备正面金属栅线的位置处制备SiO 2隧穿层，且在SiO 2隧穿层表面设置N型多晶硅层，以得到位于用于制备正面金属栅线的位置处的N型钝化接触结构；其中，在设置N型多晶硅层的同时使扩散沉积层形成N+层；在N+层表面及N型钝化接触结构表面沉积第一钝化层，在P型硅衬底的背表面沉积第二钝化层，对第二钝化层进行裸露处理，以将P型硅衬底背表面用于制备背面电场的位置裸露出来；在N型多晶硅层上制备正面电极，并在P型硅衬底背表面制备背面电场，以得到P型钝化接触太阳能电池。 In summary, the present application provides a P-type passivation contact solar cell and a preparation method thereof, wherein the preparation method includes: performing diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain the To form a diffusion deposition layer of the N+ layer; remove the diffusion deposition layer at the position used to prepare the front metal gate line, and prepare an SiO 2 tunneling layer at the position used to prepare the front metal gate line, and tunnel through the SiO 2 An N-type polysilicon layer is provided on the surface of the layer to obtain an N-type passivation contact structure at the position used to prepare the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer; in the N+ layer A first passivation layer is deposited on the surface and the surface of the N-type passivation contact structure, a second passivation layer is deposited on the back surface of the P-type silicon substrate, and the second passivation layer is exposed to the back of the P-type silicon substrate. The position for preparing the back electric field on the surface is exposed; the front electrode is prepared on the N-type polysilicon layer, and the back electric field is prepared on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
与现有技术相比，本申请的技术方案的有益技术效果为：仅在P型硅衬底正表面用于制备正面金属栅线的位置处设置SiO 2隧穿层和N型多晶硅层，而在P型硅衬底正表面其余区域不设置N型钝化接触结构，以减少N型多晶硅层对太阳光的吸收，从而提高P型钝化接触太阳能电池对太阳光的利用率，进而提高P型钝化接触太阳能电池的电流密度和转换效率。 Compared with the prior art, the technical solution of the present application has the following beneficial technical effects: only the SiO 2 tunneling layer and the N-type polysilicon layer are provided at the position where the front surface of the P-type silicon substrate is used to prepare the front metal gate line, and No N-type passivation contact structure is provided on the remaining area of the front surface of the P-type silicon substrate to reduce the absorption of sunlight by the N-type polysilicon layer, thereby increasing the utilization rate of the P-type passivation contact solar cell to sunlight, thereby increasing P Type passivation contacts the current density and conversion efficiency of solar cells.
附图说明Description of the drawings
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only It is the embodiment of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative work.
图1为本申请实施例提供的一种P型钝化接触太阳能电池的制备方法的流程图；FIG. 1 is a flowchart of a manufacturing method of a P-type passivation contact solar cell provided by an embodiment of the application;
图2为本申请实施例提供的一种P型钝化接触太阳能电池的结构示意图。FIG. 2 is a schematic structural diagram of a P-type passivation contact solar cell provided by an embodiment of the application.
附图标记为：P型硅衬底1、N+层2、SiO 2隧穿层3、第一钝化层4、N型多晶硅层5、正面金属栅线6、第二钝化层7、背面电场8、AlO X层71、SiN X层72。 The reference signs are: P-type silicon substrate 1, N+ layer 2, SiO 2 tunneling layer 3, first passivation layer 4, N-type polysilicon layer 5, front metal gate line 6, second passivation layer 7, back surface Electric field 8, AlO X layer 71, SiN X layer 72.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of this application.
参见图1，其示出了本申请实施例提供的一种P型钝化接触太阳能电池的制备方法 的流程图，本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，可以包括：Referring to FIG. 1, it shows a flow chart of a method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application. The method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application can be include:
S11：在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+层的扩散沉积层。S11: Perform diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain a diffusion deposition layer for forming an N+ layer.
选取P型硅衬底，其中，在选取时可以将氧含量控制在7ppma以下，碳含量控制在1ppma以下，电阻率控制在0.3-1.2Ω·cm，以便于选取到高质量的P型硅衬底，从而便于制备出高质量的P型钝化接触太阳能电池。另外，需要说明的是，这里提及的P型硅衬底具体可以为P型单晶硅衬底或P型多晶硅衬底。Choose a P-type silicon substrate, where the oxygen content can be controlled below 7ppma, the carbon content can be controlled below 1ppma, and the resistivity can be controlled within 0.3-1.2Ω·cm, so that high-quality P-type silicon substrates can be selected. Bottom, so as to facilitate the preparation of high-quality P-type passivation contact solar cells. In addition, it should be noted that the P-type silicon substrate mentioned here may specifically be a P-type single crystal silicon substrate or a P-type polycrystalline silicon substrate.
利用KOH溶液对选取出的P型硅衬底的正表面进行制绒，以得到金字塔绒面结构，其中，制绒减薄量可以为0.30-0.35g。KOH solution is used to texturize the front surface of the selected P-type silicon substrate to obtain a pyramid suede structure, wherein the texturing thinning can be 0.30-0.35g.
在制绒完成之后，可以在P型硅衬底的正表面进行磷扩散沉积预处理等，以在P型衬底的正表面得到用于形成N+层的扩散沉积层(具体可以为由磷源形成)，从而便于形成P-N结。After texturing is completed, phosphorus diffusion deposition pretreatment can be performed on the front surface of the P-type silicon substrate to obtain a diffusion deposition layer for forming the N+ layer on the front surface of the P-type silicon substrate (specifically, it may be a phosphorus source Form), thereby facilitating the formation of a PN junction.
S12：去除用于制备正面金属栅线的位置处的扩散沉积层，并在用于制备正面金属栅线的位置处制备SiO 2隧穿层，且在SiO 2隧穿层表面设置N型多晶硅层，以得到位于用于制备正面金属栅线的位置处的N型钝化接触结构；其中，在设置N型多晶硅层的同时使扩散沉积层形成N+层。 S12: Remove the diffusion deposition layer at the position used to prepare the front metal gate line, prepare an SiO 2 tunneling layer at the position used to prepare the front metal gate line, and provide an N-type polysilicon layer on the surface of the SiO 2 tunneling layer , In order to obtain the N-type passivation contact structure at the position for preparing the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer.
在P型硅衬底的正表面得到扩散沉积层之后，可以去除P型硅衬底正表面上用于制备正面金属栅线的位置处的扩散沉积层，之后，可以将P型硅衬底放置在氧化炉中，以在去除扩散沉积层的位置处沉积一层致密的SiO 2隧穿层(厚度可以为0.5-2nm)，即在P型硅衬底正表面用于制备正面金属栅线的位置处沉积一层致密的SiO 2隧穿层，并可以在SiO 2隧穿层表面(即在用于制备正面金属栅线的位置处的SiO 2隧穿层表面)设置N型多晶硅层(具体可以通过掺磷来得到N型多晶硅层)，以通过SiO 2隧穿层和N型多晶硅层在正面金属栅线位置处共同形成N型钝化接触结构，从而实现对P型钝化接触太阳能电池的钝化。 After the diffusion deposition layer is obtained on the front surface of the P-type silicon substrate, the diffusion deposition layer on the front surface of the P-type silicon substrate for preparing the front metal gate lines can be removed, and then the P-type silicon substrate can be placed In the oxidation furnace, a dense SiO 2 tunneling layer (the thickness can be 0.5-2nm) is deposited at the position where the diffusion deposition layer is removed, that is, the front surface of the P-type silicon substrate is used to prepare the front metal gate line depositing a layer at a position a dense SiO 2 tunneling layer, and a surface layer can be worn SiO 2 tunnel (i.e., through the SiO 2 surface layer at a position for preparing the tunnel front metal gate line) of N-type polysilicon layer (particularly The N-type polysilicon layer can be obtained by doping with phosphorus , so that the N-type passivation contact structure is formed at the position of the front metal gate line through the SiO 2 tunneling layer and the N-type polysilicon layer, so as to realize the P-type passivation contact solar cell Of passivation.
其中，在设置N型钝化接触结构的同时，可以使扩散沉积层向P型硅衬底推进而形成N+层，以避免多次高温处理对P型硅衬底造成损伤。Wherein, while the N-type passivation contact structure is set, the diffusion deposition layer can be advanced to the P-type silicon substrate to form an N+ layer, so as to avoid multiple high-temperature treatments from damaging the P-type silicon substrate.
相较于现有技术中在P型硅衬底的整个表面制备N型多晶硅层，本申请仅在用于制备正面金属栅线的位置处设置N型多晶硅层，而在不用于制备正面金属栅线的位置处不设置N型多晶硅层，以在通过所形成的N型钝化接触结构降低正面金属栅线的接触电阻及复合速率，提升开路电压的同时，尽量降低因N型多晶硅层对太阳光的吸收 而造成的损失，以提高P型钝化接触太阳能电池对太阳光的利用率，进而增加P型钝化接触太阳能电池的短路电流密度和转换效率。Compared with the prior art that prepares an N-type polysilicon layer on the entire surface of a P-type silicon substrate, this application only provides an N-type polysilicon layer at the position used to prepare the front metal gate line, but not when it is not used to prepare the front metal gate. The N-type polysilicon layer is not provided at the position of the line to reduce the contact resistance and recombination rate of the front metal gate line through the formed N-type passivation contact structure, increase the open circuit voltage, and minimize the effect of the N-type polysilicon layer on the sun. The loss caused by the absorption of light can improve the utilization rate of sunlight by the P-type passivation contact solar cell, and then increase the short-circuit current density and conversion efficiency of the P-type passivation contact solar cell.
S13：在N+层表面及N型钝化接触结构表面沉积第一钝化层，在P型硅衬底的背表面沉积第二钝化层，对第二钝化层进行裸露处理，以将P型硅衬底背表面用于制备背面电场的位置裸露出来。S13: Deposit a first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure, deposit a second passivation layer on the back surface of the P-type silicon substrate, and expose the second passivation layer to remove the P The position on the back surface of the silicon substrate used to prepare the back electric field is exposed.
在制备完N型钝化接触结构之后，可以在N+层表面及N型钝化接触结构表面沉积第一钝化层，同时，可以在P型硅衬底的背表面沉积第二钝化膜层，以通过第二钝化膜层对背表面起到钝化的作用，之后，则可以对预设位置处(具体为P型硅衬底背表面用于制备背面电场的位置)处的第二钝化层进行裸露处理，以将P型硅衬底表面用于制备背面电场的位置裸露出来，从而便于在裸露位置处制备与P型硅衬底的背表面相接触的背面电场。After preparing the N-type passivation contact structure, a first passivation layer can be deposited on the surface of the N+ layer and the surface of the N-type passivation contact structure, and at the same time, a second passivation film layer can be deposited on the back surface of the P-type silicon substrate , In order to passivate the back surface through the second passivation film layer, after that, the second passivation at the preset position (specifically the position on the back surface of the P-type silicon substrate for preparing the back electric field) can be performed. The passivation layer is exposed to expose the position where the surface of the P-type silicon substrate is used to prepare the back surface electric field, thereby facilitating the preparation of the back surface electric field in contact with the back surface of the P-type silicon substrate at the exposed position.
具体可以通过激光开孔来对预设位置处进行裸露处理，以提高裸露处理的精度。Specifically, the exposure treatment can be performed at the preset position by laser drilling, so as to improve the accuracy of the exposure treatment.
S14：在N型多晶硅层上制备正面金属栅线，并在P型硅衬底背表面制备背面电场，以得到P型钝化接触太阳能电池。S14: Prepare a front metal gate line on the N-type polysilicon layer, and prepare a back electric field on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
在沉积完钝化层之后，可以通过丝网印刷法在N型多晶硅层上制备正面金属栅线，并可以通过丝网印刷法在P型硅衬底背表面制备背面电极，从而得到P型钝化接触太阳能电池。After the passivation layer is deposited, the front metal grid lines can be prepared on the N-type polysilicon layer by screen printing, and the back electrode can be prepared on the back surface of the P-type silicon substrate by the screen printing method to obtain the P-type passivation. Chemical contact with solar cells.
本申请公开的上述技术方案，仅在P型硅衬底正表面用于制备正面金属栅线的位置处设置SiO 2隧穿层和N型多晶硅层，而在P型硅衬底正表面其余区域不设置N型钝化接触结构，以减少N型多晶硅层对太阳光的吸收，从而提高P型钝化接触太阳能电池对太阳光的利用率，进而提高P型钝化接触太阳能电池的电流密度和转换效率。 The above-mentioned technical solutions disclosed in this application only provide a SiO 2 tunneling layer and an N-type polysilicon layer on the front surface of the P-type silicon substrate where the front metal gate lines are prepared, and the remaining area on the front surface of the P-type silicon substrate No N-type passivation contact structure is provided to reduce the absorption of sunlight by the N-type polysilicon layer, thereby increasing the utilization rate of the P-type passivation contact solar cell to sunlight, thereby increasing the current density and current density of the P-type passivation contact solar cell Conversion efficiency.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，去除用于制备正面金属栅线的位置处的扩散沉积层，可以包括：The method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application may include:
在扩散沉积层表面设置掩膜层，并利用激光去除用于制备正面金属栅线的位置处的掩膜层；A mask layer is provided on the surface of the diffusion deposition layer, and a laser is used to remove the mask layer at the position used to prepare the front metal gate line;
相应地，在N+层表面及N型钝化接触结构表面沉积第一钝化层之前，还可以包括：Correspondingly, before depositing the first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure, it may further include:
去除N+层表面所设置的掩膜层。Remove the mask layer set on the surface of the N+ layer.
在制备SiO 2隧穿层之前，可以先在扩散沉积层的表面设置掩膜层，并可以通过激 光开孔的方式去除用于制备正面金属栅线的位置处的掩膜层(其中，激光开口的宽度具体可以为100-200μm)，这种利用激光去除掩膜层的方式的精度比较高，而且可控性比较好，可以尽量避免对P型硅衬底造成损伤。在去除用于制备正面金属栅线的位置处的掩膜层之后，则可以在去除掩膜层的位置处制备SiO 2隧穿层，并可以在SiO 2隧穿层的表面设置N型多晶硅层。在沉积第一钝化层之前，可以利用标准RCA清洗后去除N+层表面所设置的掩膜层并得到洁净的表面，以避免杂质对第一钝化层的制备造成影响。 Before preparing the SiO 2 tunneling layer, a mask layer can be provided on the surface of the diffusion deposition layer, and the mask layer at the position for preparing the front metal gate line can be removed by laser opening (wherein, the laser opening The width of the mask layer can be 100-200 μm). This method of using laser to remove the mask layer has relatively high precision and good controllability, and can avoid damage to the P-type silicon substrate as much as possible. After removing the mask layer at the position for preparing the front metal gate line, an SiO 2 tunnel layer can be prepared at the position where the mask layer is removed, and an N-type polysilicon layer can be provided on the surface of the SiO 2 tunnel layer . Before depositing the first passivation layer, standard RCA cleaning can be used to remove the mask layer provided on the surface of the N+ layer to obtain a clean surface, so as to prevent impurities from affecting the preparation of the first passivation layer.
其中，所设置的掩膜层可以对除用于制备正面金属栅线的位置之外的位置进行保护，以避免在P型硅衬底表面的其余位置处(具体为不用于制备正面金属栅线的位置处)沉积到N型多晶硅层。另外，可以利用SiO xN y作为掩膜层，且可以采用PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法)技术来进行掩膜层的制备，同时其厚度可以为30-70nm，以使其可以起到较好的保护作用。 Wherein, the provided mask layer can protect positions other than those used to prepare the front metal gate lines, so as to avoid the remaining positions on the surface of the P-type silicon substrate (specifically, not used to prepare the front metal gate lines). ) Is deposited onto the N-type polysilicon layer. In addition, SiO x N y can be used as a mask layer, and PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) technology can be used to prepare the mask layer, and its thickness can be 30-70 nm, So that it can play a better protective role.
需要说明的是，对于SiO 2隧穿层的制备，具体可以将已去除位于用于制备正面金属栅线的位置处的掩膜层的P型硅衬底放置在LPCVD(Low Pressure Chemical Vapor Deposition，低压力化学气相沉积法)炉中，以在LPCVD炉中制备SiO 2隧穿层。在制备完SiO 2隧穿层之后，可以在上述LPCVD炉中进行N型非晶硅层的制备。 It should be noted that for the preparation of the SiO 2 tunneling layer, the P-type silicon substrate from which the mask layer located at the position for preparing the front metal gate line has been removed can be placed in LPCVD (Low Pressure Chemical Vapor Deposition, Low pressure chemical vapor deposition method) in a furnace to prepare a SiO 2 tunneling layer in an LPCVD furnace. After the SiO 2 tunnel layer is prepared, the N-type amorphous silicon layer can be prepared in the above-mentioned LPCVD furnace.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，在SiO 2隧穿层表面设置N型多晶硅层，其中，在设置N型多晶硅层的同时使扩散沉积层形成N+层，可以包括： An embodiment of the present application provides a method for preparing a P-type passivation contact solar cell. An N-type polysilicon layer is provided on the surface of the SiO 2 tunneling layer, wherein the N-type polysilicon layer is provided while the diffusion deposition layer forms an N+ layer, Can include:
将P型硅衬底放置在LPCVD沉积炉中，通过原位掺杂技术在用于制备正面金属栅线的位置处形成N型非晶硅层，并对N型非晶硅层进行退火处理，以使N型非晶硅层晶化为N型多晶硅层，且通过对N型非晶硅层的退火处理对扩散沉积层进行推进，以形成N+层。The P-type silicon substrate is placed in the LPCVD deposition furnace, and an N-type amorphous silicon layer is formed at the position for preparing the front metal gate line by in-situ doping technology, and the N-type amorphous silicon layer is annealed, The N-type amorphous silicon layer is crystallized into an N-type polysilicon layer, and the diffusion deposition layer is advanced by annealing the N-type amorphous silicon layer to form an N+ layer.
在设置N型多晶硅层时，可以将P型硅衬底放置在LPCVD沉积炉中，并可以通过原位掺杂技术在用于制备正面金属栅线的位置处形成N型非晶硅层(具体可以为掺杂磷的N型非晶硅层)，之后，则可以对N型非晶硅层进行高温退火处理(通过退火激活钝化性能)，以使得N型非晶硅层可以晶化而得到N型多晶硅层，其中，高温退火的温度可以为880-950℃，时间可以为20-40min。When setting the N-type polysilicon layer, the P-type silicon substrate can be placed in the LPCVD deposition furnace, and an N-type amorphous silicon layer (specific It can be an N-type amorphous silicon layer doped with phosphorus), and then, the N-type amorphous silicon layer can be annealed at a high temperature (passivation performance is activated by annealing), so that the N-type amorphous silicon layer can be crystallized and An N-type polysilicon layer is obtained, where the high-temperature annealing temperature may be 880-950° C., and the time may be 20-40 min.
其中，对非晶化的N型非晶硅层的退火处理不仅可以使其晶化，而且可以对扩散沉积预处理得到的扩散沉积层进行推进，以避免多次高温处理对P型硅衬底造成损伤。Among them, the annealing treatment of the amorphous N-type amorphous silicon layer can not only crystallize it, but also promote the diffusion deposition layer obtained by the diffusion deposition pretreatment to avoid multiple high-temperature treatments on the P-type silicon substrate. Cause damage.
另外，除了通过原位掺杂技术来形成N型非晶硅层之外，还可以通过离子注入、后扩散掺杂等方式在形成N型非晶硅层。In addition, in addition to forming the N-type amorphous silicon layer by in-situ doping technology, the N-type amorphous silicon layer can also be formed by methods such as ion implantation and post-diffusion doping.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，在SiO 2隧穿层表面设置N型多晶硅层之后，还可以包括： Method for preparing passivated P-type contact solar cell of the embodiment of the present application provides, after wear of the surface layer is provided in the N-type polysilicon layer SiO 2 tunnel, it may further comprise:
在N型多晶硅层表面印刷保护层，以利用保护层对N型多晶硅层进行保护；A protective layer is printed on the surface of the N-type polysilicon layer to protect the N-type polysilicon layer with the protective layer;
利用HF去除P型硅衬底正表面除保护层之外的区域的SiO 2和背表面的SiO 2，并利用碱溶液去除绕镀多晶硅； HF is removed using n-type silicon substrate P and the back surface of the SiO 2 region other than the surface of the protective layer of SiO 2, and alkali plating solution around the polysilicon is removed;
去除保护层。Remove the protective layer.
在SiO 2隧穿层表面设置N型多晶硅层之后，可以在N型多晶硅层表面印刷保护层，具体可以通过丝网印刷技术在N型多晶硅层表面印刷蜡层，以利用所印刷的保护层对N型多晶硅层和SiO 2隧穿层进行保护，从而避免后续在处理过程中对N型钝化接触结构造成损伤。其中，所设置的保护层的宽度(具体可以为200-250μm)可以大于用于正面金属栅线的宽度(具体可以为20-40μm)，以使得保护层可以起到更好的保护作用。 After setting the N-type polysilicon layer on the surface of the SiO 2 tunneling layer, a protective layer can be printed on the surface of the N-type polysilicon layer. Specifically, a wax layer can be printed on the surface of the N-type polysilicon layer by screen printing technology to use the printed protective layer. The N-type polysilicon layer and the SiO 2 tunneling layer are protected, so as to avoid damage to the N-type passivation contact structure during subsequent processing. Wherein, the width of the protective layer (specifically 200-250 μm) may be greater than the width (specifically 20-40 μm) for the front metal gate line, so that the protective layer can play a better protective effect.
在印刷完保护层之后，可以对P型硅衬底进行HF-dip，以利用HF去除P型硅衬底正表面除保护层之外的SiO 2和背表面的SiO 2，同时保留正表面的掩膜层及PSG(磷硅玻璃)，处理之后，可以将P型硅衬底置于KOH碱溶液中，并可以添加一定的添加剂，以刻蚀P型硅衬底正表面除保护层之外的区域所绕镀的N型多晶硅层和背表面所绕镀的N型多晶硅层，以避免绕镀的N型多晶硅层对效率造成影响，进而提高P型钝化接触太阳能电池的转换效率。 After the protective layer is printed, the P-type silicon substrate can be subjected to HF-dip to use HF to remove the SiO 2 and SiO 2 on the back surface of the P-type silicon substrate except for the protective layer, while retaining the SiO 2 on the front surface. Mask layer and PSG (phosphosilicate glass). After processing, the P-type silicon substrate can be placed in KOH alkaline solution, and certain additives can be added to etch the front surface of the P-type silicon substrate except for the protective layer The N-type polysilicon layer around the area and the N-type polysilicon layer around the back surface to avoid the effect of the N-type polysilicon layer around the plating on the efficiency, thereby improving the conversion efficiency of the P-type passivation contact solar cell.
在刻蚀P型硅衬底正表面除保护层之外的绕镀多晶硅层和背表面的绕镀多晶硅层之后，可以去除保护层(对于所印刷的蜡层，可以采用有机溶剂进行清洗去除)，之后，可以利用标准RCA清洗后去除N+层表面所设置的掩膜层，以得到洁净的表面。After etching the polysilicon layer on the front surface of the P-type silicon substrate except the protective layer and the polysilicon layer on the back surface, the protective layer can be removed (for the printed wax layer, organic solvents can be used to clean and remove) After that, standard RCA cleaning can be used to remove the mask layer set on the surface of the N+ layer to obtain a clean surface.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到得到用于形成N+层的扩散沉积层，可以包括：The embodiment of the present application provides a method for preparing a P-type passivation contact solar cell, which performs diffusion deposition pretreatment on the front surface of the P-type silicon substrate after texturing to obtain a diffusion deposition layer for forming an N+ layer , Can include:
利用扩散炉在制绒后的P型硅衬底的正表面沉积磷源，以得到用于形成N+层的磷源层；其中，扩散沉积的温度为770-790℃，小氮流量为700-900sccm，时间为500-800s，以确保金属栅线下N型非晶硅退火后所形成的N+层的方阻为90-180Ω.sq -1； A diffusion furnace is used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain a phosphorus source layer for forming the N+ layer; wherein the temperature of the diffusion deposition is 770-790°C, and the small nitrogen flow rate is 700- 900sccm, the time is 500-800s, to ensure that the square resistance of the N+ layer formed after annealing of the N-type amorphous silicon under the metal gate line is 90-180Ω.sq -1 ;
通过原位掺杂在用于制备正面金属栅线的位置处形成N型非晶硅层，可以包括：Forming an N-type amorphous silicon layer at the position for preparing the front metal gate line by in-situ doping may include:
通过原位掺杂在用于制备正面金属栅线的位置处形成厚度为50-200nm、方阻为30-70Ω.sq -1的N型非晶硅层。 An N-type amorphous silicon layer with a thickness of 50-200 nm and a square resistance of 30-70Ω·sq -1 is formed at the position for preparing the front metal gate line by in-situ doping.
在对P型硅衬底进行扩散处理时，具体可以利用扩散炉在制绒后的P型硅衬底的正表面沉积磷源，以得到N+层，其中，扩散沉积的温度可以为770-790℃，小氮流量为700-900sccm，时间为500-800s，以确保所形成的N+层的方阻为90-180Ω.sq -1，以便于得到质量比较高的N+层；在N型多晶硅层制备时，所制备的N型多晶硅层的厚度可以为50-200nm，以确保非晶硅退火后的方阻可以为30-70Ω.sq -1。 When performing diffusion treatment on a P-type silicon substrate, specifically, a diffusion furnace can be used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain an N+ layer, where the temperature of the diffusion deposition can be 770-790 ℃, the small nitrogen flow rate is 700-900sccm, the time is 500-800s, to ensure that the square resistance of the formed N+ layer is 90-180Ω.sq -1 , so as to obtain a relatively high-quality N+ layer; in the N-type polysilicon layer During preparation, the thickness of the prepared N-type polysilicon layer may be 50-200 nm to ensure that the square resistance of the amorphous silicon after annealing may be 30-70Ω·sq -1 .
在上述过程中，通过对原位扩散磷源进行控制，以在正面金属栅线位置处实现重掺，对扩散沉积磷源的控制可在正面金属栅线之间的位置实现轻掺，即实现SE(Selective emitter，选择性发射极)结构，从而提高P型钝化接触太阳能电池的转换效率。In the above process, by controlling the in-situ diffusion of the phosphorus source to achieve heavy doping at the position of the front metal gate line, the control of the diffusion deposition of the phosphorus source can achieve light doping at the position between the front metal gate lines, that is, to achieve The SE (Selective Emitter) structure improves the conversion efficiency of the P-type passivation contact solar cell.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，在利用激光去除用于制备正面金属栅线的位置处的掩膜层之后，还可以包括：The method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application may further include:
利用碱溶液对所述P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理，以使P型硅衬底表面用于制备正面金属栅线的位置处形成抛光平面结构。The surface of the P-type silicon substrate for preparing the front metal gate line is polished with an alkaline solution, so that a polished planar structure is formed at the position where the surface of the P-type silicon substrate is used for preparing the front metal gate line.
在利用激光去除用于制备正面金属栅线的位置处的掩膜层之后，可以利用碱溶液(具体可以为KOH溶液，溶液温度可以为70-85℃，KOH浓度可以为20-45％，反应时间可以为100-400s)对P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理，以使P型硅衬底正表面用于制备正面金属栅线的位置处形成抛光平面结构，从而使得SiO 2隧穿层可以制备在抛光平面结构上，进而提高钝化效果。 After using the laser to remove the mask layer at the position for preparing the front metal gate line, an alkaline solution (specifically a KOH solution can be used, the solution temperature can be 70-85°C, the KOH concentration can be 20-45%, and the reaction The time can be 100-400s) Polish the surface of the P-type silicon substrate where the front metal grid lines are prepared, so that a polished planar structure is formed at the position where the front surface of the P-type silicon substrate is used to prepare the front metal grid lines. Therefore, the SiO 2 tunneling layer can be prepared on the polished planar structure, thereby improving the passivation effect.
本申请实施例提供的一种P型钝化接触太阳能电池的制备方法，在利用碱溶液对P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理之后，还可以包括：The method for preparing a P-type passivation contact solar cell provided by an embodiment of the present application may further include:
利用HCl溶液对P型硅衬底进行清洗。The P-type silicon substrate is cleaned with HCl solution.
在利用碱溶液对P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理之后，可以利用HCl溶液对P型硅衬底进行清洗，以去除P型硅衬底表面所残留的碱溶液及金属等，之后，则可以进行SiO 2隧穿层和N型非晶硅层的制备。 After polishing the surface of the P-type silicon substrate with an alkaline solution for preparing the position of the front metal gate line, the P-type silicon substrate can be cleaned with an HCl solution to remove the residual alkali on the surface of the P-type silicon substrate. Solution, metal, etc., after which, SiO 2 tunnel layer and N-type amorphous silicon layer can be prepared.
本申请实施例还提供了一种P型钝化接触太阳能电池，参见图2，其示出了本申请实施例提供的一种P型钝化接触太阳能电池的结构示意图，可以包括P型硅衬底1、位于P型硅衬底1正表面的N+层2、位于用于制备正面金属栅线6的位置处且与P型 硅衬底1相接触的SiO 2隧穿层3、位于SiO 2隧穿层3表面的N型多晶硅层5、位于N+层2表面的第一钝化层4、位于N型多晶硅层5表面的正面金属栅线6、位于P型硅衬底1背表面的第二钝化层7、位于第二钝化层7表面且与P型硅衬底1背表面用于制备背面电场8的位置相接触的背面电场8，其中，SiO 2隧穿层3和N型多晶硅层5形成N型钝化接触结构。 The embodiment of the present application also provides a P-type passivation contact solar cell, see FIG. 2, which shows a schematic structural diagram of a P-type passivation contact solar cell provided by an embodiment of the present application, which may include a P-type silicon lining Bottom 1. N+ layer located on the front surface of P-type silicon substrate 1, 2. SiO 2 tunneling layer 3 located at the position for preparing front metal gate line 6 and in contact with P-type silicon substrate 1 , located on SiO 2 The N-type polysilicon layer 5 on the surface of the tunnel layer 3, the first passivation layer 4 on the surface of the N+ layer 2, the front metal gate line 6 on the surface of the N-type polysilicon layer 5, and the second layer on the back surface of the P-type silicon substrate 1. The second passivation layer 7, the back electric field 8 located on the surface of the second passivation layer 7 and in contact with the position on the back surface of the P-type silicon substrate 1 for preparing the back electric field 8, in which the SiO 2 tunnel layer 3 and the N-type The polysilicon layer 5 forms an N-type passivation contact structure.
在本申请所提供的P型钝化接触太阳能电池中，SiO 2隧穿层层3位于用于制备正面金属栅线6的位置处且与P型硅衬底1相接触，第一钝化层4位于N+层2表面及N型钝化接触结构的表面，N型多晶硅层5位于SiO2隧穿层3表面，第二钝化层7位于P型硅衬底1背表面，背面电场8位于第二钝化层7表面且与P型硅衬底1背表面用于制备背面电场8的位置相接触。 In the P-type passivation contact solar cell provided by this application, the SiO 2 tunneling layer 3 is located at the position for preparing the front metal gate line 6 and is in contact with the P-type silicon substrate 1. The first passivation layer 4 is located on the surface of the N+ layer 2 and the surface of the N-type passivation contact structure, the N-type polysilicon layer 5 is located on the surface of the SiO2 tunneling layer 3, the second passivation layer 7 is located on the back surface of the P-type silicon substrate 1, and the back electric field 8 is located on the first surface. The surface of the second passivation layer 7 is in contact with the position on the back surface of the P-type silicon substrate 1 for preparing the back electric field 8.
由于本申请仅在正面金属栅线6的下方设置了N型多晶硅层5，而其余位置不设置N型多晶硅层5，因此，则可以N型多晶硅层5对太阳光的吸收，从而可以提高P型钝化接触太阳能电池对太阳光的利用率，进而可以提高P型钝化接触太阳能电池的电流密度和转换效率。Since the present application only provides the N-type polysilicon layer 5 under the front metal gate line 6 and does not provide the N-type polysilicon layer 5 in the remaining positions, the N-type polysilicon layer 5 can absorb sunlight, thereby increasing P The solar cell's utilization rate of sunlight with type passivation contact can improve the current density and conversion efficiency of the P-type passivation contact solar cell.
本申请实施例提供的一种P型钝化接触太阳能电池，第一钝化层4为SiN X层，第二钝化层7可以包括与P型硅衬底1背表面相接触的AlO X层71、位于AlO X层71外表面的SiN X层72。 An embodiment of the application provides a P-type passivation contact solar cell, the first passivation layer 4 is a SiN X layer, and the second passivation layer 7 may include an AlO X layer in contact with the back surface of the P-type silicon substrate 1 71. The SiN X layer 72 located on the outer surface of the AlO X layer 71.
第一钝化层4具体可以为SiN X层，而第二钝化层7具体可以包括与P型硅衬底1背表面相接触的AlO X层71、位于AlO X层71外表面且与背面电场8相接触的SiN X层72。 The first passivation layer 4 may specifically be a SiN X layer, and the second passivation layer 7 may specifically include an AlO X layer 71 in contact with the back surface of the P-type silicon substrate 1, located on the outer surface of the AlO X layer 71 and connected to the back surface. The electric field 8 is in contact with the SiN X layer 72.
本申请与对照组(区别仅在于衬底正表面全部设置N型钝化接触结构)的太阳能电池的性能数据如下所示，数据以对照组性能作为基准。The performance data of the solar cell of this application and the control group (the only difference lies in that all the front surface of the substrate is provided with an N-type passivation contact structure) is as follows, and the data is based on the performance of the control group.
分组Grouping UocUoc JscJsc FFFF EtaEta
对照组Control group 11 11 11 11
本申请组This application group 1.0051.005 1.021.02 1.0091.009 1.011.01
需要说明的是，本申请实施例提供的一种P型钝化接触太阳能电池中相关部分的说明可以参见本申请实施例提供的一种P型钝化接触太阳能电池的制备方法中对应部分的详细说明，在此不再赘述。It should be noted that the description of the relevant parts of the P-type passivation contact solar cell provided in the embodiment of the application can refer to the detailed description of the corresponding part in the preparation method of the P-type passivation contact solar cell provided in the embodiment of the application. Explanation, I won't repeat it here.
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个......”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。另外，本申请实施例提供的上述技术方案中与现有技术中对应技术方案实现原理一致的部分并未详细说明，以免过多赘述。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply one of these entities or operations. There is any such actual relationship or order between. Moreover, the terms "including", "including" or any other variants thereof are intended to cover non-exclusive inclusions, so as to include elements inherent in a process, method, article, or device of a series of elements. Without more restrictions, the element defined by the sentence "including a..." does not exclude the existence of other same elements in the process, method, article, or equipment that includes the element. In addition, the parts of the foregoing technical solutions provided by the embodiments of the present application that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail, so as to avoid redundant description.
对所公开的实施例的上述说明，使本领域技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下，在其它实施例中实现。因此，本申请将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables those skilled in the art to implement or use this application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, this application will not be limited to the embodiments shown in this document, but should conform to the widest scope consistent with the principles and novel features disclosed in this document.

Claims (9)

  1. 一种P型钝化接触太阳能电池的制备方法，其特征在于，包括：A method for preparing a P-type passivation contact solar cell, which is characterized in that it comprises:
    在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+层的扩散沉积层；Perform diffusion deposition pretreatment on the front surface of the textured P-type silicon substrate to obtain a diffusion deposition layer for forming an N+ layer;
    去除用于制备正面金属栅线的位置处的所述扩散沉积层，并在用于制备正面金属栅线的位置处制备SiO 2隧穿层，且在所述SiO 2隧穿层表面设置N型多晶硅层，以得到位于用于制备正面金属栅线的位置处的N型钝化接触结构；其中，在设置所述N型多晶硅层的同时使所述扩散沉积层形成N+层； The diffusion deposition layer at the position for preparing the front metal gate line is removed, and the SiO 2 tunneling layer is prepared at the position for preparing the front metal gate line, and an N-type is provided on the surface of the SiO 2 tunneling layer. A polysilicon layer to obtain an N-type passivation contact structure at a position for preparing the front metal gate line; wherein, while the N-type polysilicon layer is provided, the diffusion deposition layer is made to form an N+ layer;
    在所述N+层表面及所述N型钝化接触结构表面沉积第一钝化层，在所述P型硅衬底的背表面沉积第二钝化层，对所述第二钝化层进行裸露处理，以将所述P型硅衬底背表面用于制备背面电场的位置裸露出来；A first passivation layer is deposited on the surface of the N+ layer and the surface of the N-type passivation contact structure, a second passivation layer is deposited on the back surface of the P-type silicon substrate, and the second passivation layer is Bare treatment to expose the position where the back surface of the P-type silicon substrate is used to prepare the back electric field;
    在所述N型多晶硅层上制备正面电极，并在所述P型硅衬底背表面制备背面电场，以得到P型钝化接触太阳能电池。A front electrode is prepared on the N-type polysilicon layer, and a back electric field is prepared on the back surface of the P-type silicon substrate to obtain a P-type passivation contact solar cell.
  2. 根据权利要求1所述的P型钝化接触太阳能电池的制备方法，其特征在于，所述的去除用于制备正面金属栅线的位置处的所述扩散沉积层，包括：The method for preparing a P-type passivation contact solar cell according to claim 1, wherein the removing the diffusion deposition layer at the position for preparing the front metal gate line comprises:
    在所述扩散沉积层表面设置掩膜层，并利用激光去除用于制备正面金属栅线的位置处的所述掩膜层；Disposing a mask layer on the surface of the diffusion deposition layer, and using a laser to remove the mask layer at the position for preparing the front metal gate line;
    相应地，在所述N+层表面及所述N型钝化接触结构表面沉积第一钝化层之前，还包括：Correspondingly, before depositing a first passivation layer on the surface of the N+ layer and the surface of the N-type passivation contact structure, the method further includes:
    去除所述N+层表面所设置的所述掩膜层。The mask layer provided on the surface of the N+ layer is removed.
  3. 根据权利要求2所述的P型钝化接触太阳能电池的制备方法，其特征在于，在所述SiO 2隧穿层表面设置N型多晶硅层，其中，在设置所述N型多晶硅层的同时使所述扩散沉积层形成N+层，包括： The method for preparing a P-type passivation contact solar cell according to claim 2, wherein an N-type polycrystalline silicon layer is provided on the surface of the SiO 2 tunneling layer, wherein the N-type polycrystalline silicon layer is simultaneously used when the N-type polycrystalline silicon layer is provided. The diffusion deposition layer forms an N+ layer, including:
    将所述P型硅衬底放置在LPCVD沉积炉中，通过原位掺杂在用于制备正面金属栅线的位置处形成N型非晶硅层，并对所述N型非晶硅层进行退火处理，以使所述N型非晶硅层晶化为所述N型多晶硅层，且通过对所述N型非晶硅层的退火处理对所述扩散沉积层进行推进，以形成所述N+层。The P-type silicon substrate is placed in an LPCVD deposition furnace, an N-type amorphous silicon layer is formed at the position for preparing the front metal gate line by in-situ doping, and the N-type amorphous silicon layer is processed Annealing treatment to crystallize the N-type amorphous silicon layer into the N-type polycrystalline silicon layer, and the diffusion deposition layer is advanced by annealing the N-type amorphous silicon layer to form the N+ layer.
  4. 根据权利要求3所述的P型钝化接触太阳能电池的制备方法，其特征在于，在所述SiO 2隧穿层表面设置N型多晶硅层之后，还包括： The method for preparing a P-type passivation contact solar cell according to claim 3, wherein after the N-type polysilicon layer is disposed on the surface of the SiO 2 tunneling layer, the method further comprises:
    在所述N型多晶硅层表面印刷保护层，以利用所述保护层对所述N型多晶硅层进 行保护；Printing a protective layer on the surface of the N-type polycrystalline silicon layer, so as to protect the N-type polycrystalline silicon layer by using the protective layer;
    利用HF去除所述P型硅衬底正表面除所述保护层之外的区域的SiO 2和背表面的SiO 2，并利用碱溶液去除绕镀多晶硅； With HF removal area of the P-type silicon substrate other than the front surface of the protective layer of SiO 2 and the back surface of the SiO 2 is removed using an alkaline solution around the plating polysilicon;
    去除所述保护层。Remove the protective layer.
  5. 根据权利要求3所述的P型钝化接触太阳能电池的制备方法，其特征在于，在制绒后的P型硅衬底的正表面进行扩散沉积预处理，以得到用于形成N+层的扩散沉积层，包括：The method for preparing a P-type passivation contact solar cell according to claim 3, wherein the diffusion deposition pretreatment is performed on the front surface of the P-type silicon substrate after texturing to obtain a diffusion layer for forming the N+ layer. Sedimentary layers, including:
    利用扩散炉在制绒后的P型硅衬底的正表面沉积磷源，以得到用于形成N+层的磷源层；其中，扩散沉积的温度为770-790℃，小氮流量为700-900sccm，时间为500-800s，以确保金属栅线下N型非晶硅退火后所形成的所述N+层的方阻为90-180Ω.sq -1； A diffusion furnace is used to deposit a phosphorus source on the front surface of the textured P-type silicon substrate to obtain a phosphorus source layer for forming the N+ layer; wherein the temperature of the diffusion deposition is 770-790°C, and the small nitrogen flow rate is 700- 900sccm, the time is 500-800s, to ensure that the square resistance of the N+ layer formed after annealing of the N-type amorphous silicon under the metal gate line is 90-180Ω.sq -1 ;
    通过原位掺杂在用于制备正面金属栅线的位置处形成N型非晶硅层，包括：The formation of an N-type amorphous silicon layer at the position for preparing the front metal gate line by in-situ doping includes:
    通过原位掺杂在用于制备正面金属栅线的位置处形成厚度为50-200nm、方阻为30-70Ω.sq -1的N型非晶硅层。 An N-type amorphous silicon layer with a thickness of 50-200 nm and a square resistance of 30-70Ω·sq -1 is formed at the position for preparing the front metal gate line by in-situ doping.
  6. 根据权利要求2所述的P型钝化接触太阳能电池的制备方法，其特征在于，在利用激光去除用于制备正面金属栅线的位置处的所述掩膜层之后，还包括：The manufacturing method of the P-type passivation contact solar cell according to claim 2, characterized in that, after removing the mask layer at the position for preparing the front metal grid line by using a laser, the method further comprises:
    利用碱溶液对所述P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理，以使所述P型硅衬底表面用于制备正面金属栅线的位置处形成抛光平面结构。The surface of the P-type silicon substrate for preparing the front metal gate line is polished with an alkaline solution, so that a polished planar structure is formed on the surface of the P-type silicon substrate for preparing the front metal gate line.
  7. 根据权利要求6所述的P型钝化接触太阳能电池的制备方法，其特征在于，在利用碱溶液对所述P型硅衬底表面用于制备正面金属栅线的位置进行抛光处理之后，还包括：The method for preparing a P-type passivation contact solar cell according to claim 6, characterized in that, after polishing the surface of the P-type silicon substrate for preparing the front metal grid line position on the surface of the P-type silicon substrate with an alkali solution, further include:
    利用HCl溶液对所述P型硅衬底进行清洗。The P-type silicon substrate is cleaned with an HCl solution.
  8. 一种P型钝化接触太阳能电池，其特征在于，包括P型硅衬底、位于所述P型硅衬底正表面的N+层、位于用于制备正面金属栅线的位置处且与所述P型硅衬底相接触的SiO 2隧穿层、位于所述SiO 2隧穿层表面的N型多晶硅层、位于所述N+层表面的第一钝化层、位于所述N型多晶硅层表面的正面金属栅线、位于所述P型硅衬底背表面的第二钝化层、位于所述第二钝化层表面且与所述P型硅衬底背表面用于制备背面电场的位置相接触的背面电场，其中，所述SiO 2隧穿层和所述N型多晶硅层共同形成N型钝化接触结构。 A P-type passivation contact solar cell, which is characterized by comprising a P-type silicon substrate, an N+ layer located on the front surface of the P-type silicon substrate, and located at a position for preparing front metal gate lines and interacting with the The SiO 2 tunneling layer in contact with the P-type silicon substrate , the N-type polysilicon layer on the surface of the SiO 2 tunneling layer, the first passivation layer on the surface of the N+ layer, and the N-type polysilicon layer on the surface The front metal gate line of the P-type silicon substrate, the second passivation layer on the back surface of the P-type silicon substrate, the position on the surface of the second passivation layer and the back surface of the P-type silicon substrate for preparing the back electric field The backside electric field in contact, wherein the SiO 2 tunneling layer and the N-type polysilicon layer jointly form an N-type passivation contact structure.
  9. 根据权利要求8所述的P型钝化接触太阳能电池，其特征在于，所述第一钝化 层为SiN X层，所述第二钝化层包括与所述P型硅衬底背表面相接触的AlO X层、位于所述AlO X层外表面的SiN X层。 The P-type passivation contact solar cell according to claim 8, wherein the first passivation layer is a SiN X layer, and the second passivation layer includes a back surface of the P-type silicon substrate. AlO X layer contact layer located on the outer surface of the SiN X of the AlO X layer.
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