CN105702809A - Method for preparing doped silicon of solar battery with low temperature vapor deposited solid diffusion source - Google Patents
Method for preparing doped silicon of solar battery with low temperature vapor deposited solid diffusion source Download PDFInfo
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- CN105702809A CN105702809A CN201610210064.3A CN201610210064A CN105702809A CN 105702809 A CN105702809 A CN 105702809A CN 201610210064 A CN201610210064 A CN 201610210064A CN 105702809 A CN105702809 A CN 105702809A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000007787 solid Substances 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 7
- 239000001569 carbon dioxide Substances 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910000085 borane Inorganic materials 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000005240 physical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 210000004127 vitreous body Anatomy 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a method for preparing doped silicon of a solar battery with a low temperature vapor deposited solid diffusion source. The method mainly comprises following steps of preparing a layer of silicon dioxide film on the surface of a silicon wafer as the diffusion source through adoption of a low temperature chemical vapor deposition or physical vapor deposition method, wherein the concentration of the atoms doped in the silicon dioxide film can be controlled precisely; carrying out high temperature diffusion in an air atmosphere; and finally removing the residual diffusion source by HF. The n type and p type diffusion silicon layers with precisely controllable sheet resistance of 60-600 omega/square can be obtained; the distribution evenness of the sheet resistance on the surface of the silicon wafer is superior to that of the product obtained by the existing diffusion technique in the solar battery industry; the application range of the diffusion technique in the solar battery field can be further expanded; and the performance of the solar battery is improved.
Description
Technical field
The present invention is a kind of method that the doped silicon for solar cell is prepared in low temperature vapor deposition solid-state diffusion source, belongs to solar cell field, falls within field of semiconductor devices。Relate to the technology of preparing of solar cell。
Background technology
At present, in diffusion technique application in solar cell field concentrates on crystal-silicon solar cell。For manufacturing the n-type emitter stage of p-doped in the preparation of p-type crystal-silicon solar cell, adopt phosphorus oxychloride liquid source as diffusion source, high temperature process furnances carries out multi-disc and spreads simultaneously。N-type crystal-silicon solar cell in for preparing the p type emitter of boron-doping, main adopt Boron tribromide as diffusion source, be diffused in high temperature process furnances。Its ultimate principle is similar, is diffusion source and is formed at silicon chip surface and have the vitreous body of high impurity concentration (phosphorosilicate glass or Pyrex, wherein the concentration of phosphorus or boron is 10 entering high-temperature tubular furnace rear22cm-3The order of magnitude, with the bulk concentration of silicon atom in silicon chip at an order of magnitude), at high temperature it is diffused in permanent source mode, diffusion terminates rear HF solution removal vitreous body active layer, more otherwise removes the dead layer that surface concentration is too high。
Aforesaid way mass production techniques is relatively simple, and production cost is low。But there is also some problems that cannot overcome, for instance remove retrovitreal surface layer impurity concentration too high, it is necessary to etching is removed, and cannot be carried out being accurately controlled to the concentration of diffusion layer；The sheet resistance distribution of silicon chip surface diffusion layer is uniform not, sheet resistance is further continued for increasing comparatively difficult (sheet resistance of current p-type crystal-silicon solar cell diffusion gained n-type emitter layer hinders height difference about 5-10 Ω/ above 90-100 Ω/, 156mm × 156mm area silicon chip) etc.。And aforesaid way cannot carry out two-sided spreading in double-sided deposition dissimilar diffusion source simultaneously。
For crystal-silicon solar cell, the progressive limit of existing diffusion technology has become as the bottleneck that restriction crystal-silicon solar cell performance promotes further。
Summary of the invention
The purpose of the present invention is to propose to a kind of low temperature vapor deposition solid-state diffusion source preparation method for the doped silicon of solar cell, method depositing solid diffusion source layer with low temperature vapor deposition, by controlling impurity concentration and total amount in the diffusion source layer deposited, accomplish accurately to control the doped chemical distribution of diffusion layer and sheet resistance, improve the modification scope of sheet resistance, and improve the uniformity of sheet resistance distribution。
The present invention is achieved by the following technical solutions。
The preparation of a kind of low temperature vapor deposition solid-state diffusion source is for the method for the doped silicon of solar cell。
Depositing doped silicon oxide as diffusion source layer using the method for low temperature vapor deposition at silicon chip surface, the thickness of deposit and spread active layer is 10-200 nanometer。
The method of low temperature vapor deposition of the present invention includes low temperature chemical vapor deposition method and low-temperature physics sputtering method。
Described chemical vapour deposition technique includes plasma-assisted chemical vapour deposition and hot-wire chemical gas-phase deposition, using silane and carbon dioxide as silicon source and oxygen source in deposition process, preferably using phosphine and borine as the source of the gas of n-type doping and p-type doping, phosphorus or the boron atomic concentration of deposition doped silicon oxide layer are 1018-1022cm-3。
Described low-temperature physics vapour deposition process includes magnetron sputtering method and ion beam sputtering, to be doped with atomic density for 1018-1022cm-3Phosphorus or the silicon oxide of boron carry out sputtering sedimentation as target。Deposited the silicon chip of diffusion source layer to be diffused in air atmosphere in 800-1000 DEG C of temperature range, diffusion removes, with HF acid, the diffusion source layer that silicon chip surface remains after terminating。
The present invention can carry out 350-500 DEG C before depositing operation carries out within the scope of Low Temperature Heat Treatment with remove further in depositional coating exist hydrogen atom or the volatile atom of gas。
After present invention deposition, diffusion layer sheet resistance inhomogeneities of diffusion layer sheet resistance on 60-600 Ω/, 156mm × 156mm area silicon chip of silicon chip controls within ± 5%。
Diffusion source layer of the present invention can obtain one side diffusion layer by single sided deposition doped silicon oxide layer, it is possible to double-sided deposition doped oxide layer obtains Double side diffusion layer。
When double-sided deposition oxide skin(coating) of the present invention is deposited, the oxide skin(coating) of double-sided deposition can be all n-type or p-type doped source, it is possible to respectively n-type and p-type doped source。Post-depositional diffusion is completed by a step pyroprocess, and regulating of the sheet resistance of double-sided deposition diffusion layer is main by the concentration of dopant atoms regulable control in diffusion source layer。
Depositing high temperature diffusion process can complete in tube furnace, it is possible to completes in chain-type or roller bed type continuous oven。
Gained diffusion layer of the present invention can be used for homojunction crystal silicon solar battery as emitter stage or/and back of the body electric field, it is also possible in novel homogeneity hetero-junctions crystal silicon solar battery, two-sided enter the novel solar cell such as light solar cell。
Having the technical effect that of invention has invented a kind of diffusion layer sheet resistance controllable precise and range of accommodation is big, the diffusion source layer preparation method of the crystal-silicon solar cell that uniformity is good and diffusion technique, use the method can improve the range of accommodation of crystalline silicon diffusion layer sheet resistance, strengthen uniformity, further expand the diffusion technique range of application in solar cell field with it, improve the performance of solar cell。
Detailed description of the invention
The present invention will be described further by following example。
Embodiment 1。
Adopt plasma-assisted chemical vapour deposition method with silane: carbon dioxide: the ratio that phosphine flow-rate ratio is 4:20:0.2, be 1 × 10 at cleaned silicon chip surface one layer of phosphorus atom concentration of deposition19cm-3The silicon oxide film that thickness is 20 nanometers as diffusion source；Then in air atmosphere, 400 DEG C are carried out, the heat treatment dehydrogenation of 1 hour, again in air atmosphere 840 DEG C spread 50 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtain degree of irregularity that square resistance is diffusion layer sheet resistance on 92 Ω/, 156mm × 156mm area silicon chip less than 5%。
Embodiment 2。
Adopt hot filament CVD with silane: carbon dioxide: the ratio that borine flow-rate ratio is 2:20:0.2, be 1 × 10 in cleaned silicon chip surface one layer of boron atomic concentration of deposition22cm-3The silicon oxide film that thickness is 100 nanometers as diffusion source；Then in air atmosphere, 400 DEG C are carried out, the heat treatment dehydrogenation of 1 hour, again in air atmosphere 900 DEG C spread 60 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtain degree of irregularity that square resistance is diffusion layer sheet resistance on 150 Ω/, 156mm × 156mm area silicon chip less than 5%。
Embodiment 3。
Adopt magnetron sputtering method with phosphorus atom concentration for 1 × 1018cm-3Silicon oxide as target, be 1 × 10 at cleaned silicon chip surface one layer of phosphorus atom concentration of deposition18cm-3The silicon oxide film that thickness is 80 nanometers as diffusion source；Then in air atmosphere 860 DEG C spread 20 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtain degree of irregularity that square resistance is diffusion layer sheet resistance on 210 Ω/, 156mm × 156mm area silicon chip less than 5%。
Embodiment 4。
Adopt ion beam sputtering with boron atomic concentration for 1 × 1020cm-3Silicon oxide as target, be 1 × 10 in cleaned silicon chip surface one layer of boron atomic concentration of deposition20cm-3The silicon oxide film that thickness is 20 nanometers as diffusion source；Then in air atmosphere 1000 DEG C spread 20 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtain degree of irregularity that square resistance is diffusion layer sheet resistance on 200 Ω/, 156mm × 156mm area silicon chip less than 5%。
Embodiment 5。
Adopt plasma-assisted chemical vapour deposition method with silane: carbon dioxide: the ratio that borine flow-rate ratio is 4:20:0.05, be 1 × 10 in cleaned silicon chip surface one layer of boron atomic concentration of deposition19cm-3The silicon oxide film that thickness is 20 nanometers as diffusion source；Then in air atmosphere, 400 DEG C are carried out, the heat treatment dehydrogenation of 1 hour, again in air atmosphere 800 DEG C spread 50 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtain degree of irregularity that square resistance is diffusion layer sheet resistance on 600 Ω/, 156mm × 156mm area silicon chip less than 5%。
Embodiment 6。
Adopt hot filament CVD with silane in the one side of cleaned silicon chip: carbon dioxide: the ratio that borine flow-rate ratio is 4:20:0.2, be 1 × 10 in cleaned silicon chip surface one layer of boron atomic concentration of deposition20cm-3The silicon oxide film that thickness is 80 nanometers as diffusion source；Then in the additionally one side of silicon chip with silane: carbon dioxide: the ratio that phosphine flow-rate ratio is 4:20:0.1, is 1 × 10 in cleaned silicon chip surface one layer of boron atomic concentration of deposition20cm-3The silicon oxide film that thickness is 50 nanometers as diffusion source；By double-sided deposition, the silicon chip in diffusion source carries out 450 DEG C in air atmosphere, the heat treatment dehydrogenation of 1 hour, again in air atmosphere 900 DEG C spread 50 minutes, finally with the oxide skin(coating) of HF solution removal silicon chip surface residual, obtaining boron-doping face square resistance is 160 Ω/, p-doped face square resistance is that the degree of irregularity of the diffusion layer sheet resistance on 90 Ω/, 156mm × 156mm area silicon chip is less than 5%。
Claims (10)
1. the preparation of low temperature vapor deposition solid-state diffusion source is for a method for the doped silicon of solar cell, it is characterized in that the method using low temperature vapor deposition deposits doped silicon oxide as diffusion source layer at silicon chip surface, and the thickness of deposit and spread active layer is 10-200 nanometer。
2. method according to claim 1, is characterized in that the method for described low temperature vapor deposition is low temperature chemical vapor deposition method or low-temperature physics sputtering method。
3. method according to claim 2, is characterized in that described chemical vapour deposition technique is plasma-assisted chemical vapour deposition or hot-wire chemical gas-phase deposition, using silane and carbon dioxide as silicon source and oxygen source in deposition process。
4. method according to claim 3, is characterized in that phosphorus or the boron atomic concentration of deposition doped silicon oxide layer are 10 using phosphine and borine as the source of the gas of n-type doping and p-type doping18-1022cm-3。
5. method according to claim 2, is characterized in that described low-temperature physics vapour deposition process is magnetron sputtering method or ion beam sputtering, to be doped with atomic density for 1018-1022cm-3Phosphorus or the silicon oxide of boron carry out sputtering sedimentation as target, deposited the silicon chip of diffusion source layer and be diffused in air atmosphere in 800-1000 DEG C of temperature range, the diffusion source layer of silicon chip surface residual is removed in diffusion with HF acid after terminating。
6. method according to claim 1, is characterized in that the Low Temperature Heat Treatment within the scope of carrying out 350-500 DEG C before depositing operation carries out。
7. method according to claim 1, is characterized in that described diffusion source layer is single sided deposition doped silicon oxide layer or double-sided deposition doped oxide layer。
8. method according to claim 7, is characterized in that double-sided deposition doped oxide layer is all n-type or p-type doped source, or respectively n-type and p-type doped source。
9. method according to claim 1, is characterized in that deposition process completes in tube furnace, or completes in chain-type or roller bed type continuous oven。
10. the diffusion layer that in claim 1-9 prepared by method described in any claim for homojunction crystal silicon solar battery as emitter stage or/and back of the body electric field, or for homogeneity hetero-junctions crystal silicon solar battery, or for two-sided enter light solar cell。
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| CN107749396A (en) * | 2017-10-26 | 2018-03-02 | 江西硅辰科技有限公司 | A kind of plasma of diffusion crystal-silicon solar cell carves side method |
| CN109545673A (en) * | 2018-10-12 | 2019-03-29 | 南昌大学 | A kind of crystal-silicon solar cell anaerobic method of diffusion |
| CN110890443A (en) * | 2018-09-10 | 2020-03-17 | 浙江清华柔性电子技术研究院 | Crystalline silicon solar cell diffusion layer and preparation method thereof |
| CN111048623A (en) * | 2019-12-20 | 2020-04-21 | 中节能太阳能科技（镇江）有限公司 | Emitter preparation method for improving sheet resistance uniformity |
| CN111463317A (en) * | 2020-04-08 | 2020-07-28 | 浙江正泰太阳能科技有限公司 | P-type passivated contact solar cell and preparation method thereof |
| CN118398482A (en) * | 2024-06-25 | 2024-07-26 | 北京怀柔实验室 | Semiconductor device and method for manufacturing the same |
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| CN109545673B (en) * | 2018-10-12 | 2022-01-11 | 南昌大学 | Oxygen-free diffusion method for crystalline silicon solar cell |
| CN111048623A (en) * | 2019-12-20 | 2020-04-21 | 中节能太阳能科技（镇江）有限公司 | Emitter preparation method for improving sheet resistance uniformity |
| CN111463317A (en) * | 2020-04-08 | 2020-07-28 | 浙江正泰太阳能科技有限公司 | P-type passivated contact solar cell and preparation method thereof |
| CN118398482A (en) * | 2024-06-25 | 2024-07-26 | 北京怀柔实验室 | Semiconductor device and method for manufacturing the same |
| CN118398482B (en) * | 2024-06-25 | 2024-10-18 | 北京怀柔实验室 | Semiconductor device and method for manufacturing the same |
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