CN100385036C - Physical vapor deposition device and method for Nano silicon-crystal thin film of solar battery - Google Patents
Physical vapor deposition device and method for Nano silicon-crystal thin film of solar battery Download PDFInfo
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- CN100385036C CN100385036C CNB2005100197985A CN200510019798A CN100385036C CN 100385036 C CN100385036 C CN 100385036C CN B2005100197985 A CNB2005100197985 A CN B2005100197985A CN 200510019798 A CN200510019798 A CN 200510019798A CN 100385036 C CN100385036 C CN 100385036C
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Abstract
The present invention discloses a physical vapor deposition device and a method for nanometer crystal-silicon film of a solar battery, which relates to a manufacture method of the nanometer crystal-silicon film of the solar battery in the field of new energy source material. The device adopts a physical vapor deposition (PVD) method to deposit the nanometer crystal-silicon film based on a vacuum coating machine, and the purpose can be achieved by designing the configuration of the vacuum coating machine for depositing silicon film and adopting the total technology that an ion beam method is adopted to deposit the nanometer crystal-silicon film and a gas-phase doping method is adopted to prepare a PIN structure of a film silicon solar battery. The present invention can obtain the crystal-silicon film of which the dimension is from nanometers to microns, and has the significance for improving the photoelectric conversion efficiency of the silicon solar battery, solving the technical problem of the light decay of an amorphous silicon solar battery, and being applied to the ground on a large scale; the present invention has the great application value for solving the problem of restricting the development of the silicon solar battery, namely the supply of silicon material, and developing an energy-saving high-efficiency silicon solar battery.
Description
Technical field
The present invention relates to the making method of Nano silicon-crystal thin film of solar battery in the energy field of new; Specifically, the physical vapor deposition (PVD) method that relates to a kind of plasma ion beam depositing solar cell Nano silicon-crystal thin film.
Background technology
Non-crystalline silicon (a-Si:H) thin-film solar cells was all having significant progress in recent years aspect fundamental research and the production technology, photoelectric transformation efficiency improves constantly, and becomes the importance that solar cell is applied on ground.([1] Chen Guanghua, Deng Jinxiang write, novel electron thin-film material, Chemical Industry Press).The material structure of non-crystalline silicon is different from perfect single crystal, and its microtexture is a kind of covalent linkage random network, short range order, and long-range is unordered, does not have lattice period.Owing to have a large amount of hydrogen atoms in non-crystalline silicon, the saturated dangling bonds of Siliciumatom make non-crystalline silicon become a kind of metastable state semiconductor material, and photoelectric properties obtain bigger improvement.It is the light decay problem that non-crystal silicon solar cell runs into a great technical barrier, does not thoroughly solve as yet so far.Amorphous silicon membrane is through behind the long-time strong illumination, and tangible decay appears in its photoelectric characteristic.Generally believe that a large amount of hydrogen atoms in the non-crystalline silicon can produce the hydrogen diffusion after being subjected to illumination, hydrogen release etc. produce new deathnium and trap center, have changed the bonding mode of hydrogen in the preceding silicon of illumination, thereby make the photoelectric properties variation of non-crystalline silicon.The preparation amorphous silicon membrane adopts glow discharge chemical gas phase deposition (PCVD) usually, and this deposition method is difficult to obtain the crystal silicon film not hydrogenous, that crystalline quality is good.
The energy gap of silicon metal is narrower than non-crystalline silicon, can improve the long wave response, more effective solar energy that utilizes, and the theoretical light photoelectric transformation efficiency is than non-crystalline silicon height.The crystal silicon film solar cell has more superiority than silicon single crystal and casting polycrystalline silicon solar cell.The solar cell of equal-wattage, silicon single crystal and cast silicon battery are bigger more than 100 times than crystal silicon film to the consumption of silicon materials.Silicon materials are a kind of highly energy-consuming products, and supply falls short of demand at present, the many at present dependence imports of China, and market value is surging.
Nano silicon-crystal thin film is acknowledged as efficiently, the optimal solar cell material of low consumption.Prepare not hydrogenous silicon film, just can eliminate the reason of amorphous solar cell light decay from the source.The acquisition defect state density is low, and the Nano silicon-crystal thin film that crystalline quality is good is to improve the key technical problem that the solar cell photoelectric efficiency of conversion will solve.
Ion source is that more advanced plated film householder method is used in vacuum plating in recent years gradually, has significantly improved the quality of rete in preparation blooming, hard films, anti-corrosion film.The Chinese scholar poplar can give birth to etc. and feed hydrocarbon polymer in ion source, is used for depositing diamond-like (DLC) film and obtains good effect.([2] Sun Shulong, Yang Huisheng, Wang Yanbin etc., vacuum science and technology, the 23rd volume, the 3rd phase, in June, 2003)
The present invention is used for the deposition of Nano silicon-crystal thin film with ion source, does not have theoretic obstacle.Usually deposition of amorphous silicon films adopts hydrogen diluted silane glow discharge method, allows silane excite and decomposition, and its energy state is approximately 1-10eV, generates hydrogenous non-crystalline silicon.When gases such as silane, borine or phosphine pass through ion source, be subjected to exciting of electric field in the ion source, magnetic field, can reach 100-1000eV even higher energy state.Under so high energy state, be enough to make the whole ionizations of hydrogen atom in their molecules, generate positively charged silicon ion Si respectively
+, phosphonium ion P
+With boron ion B
+, under their each comfortable substrate negative bias voltage effects, in electric field, be accelerated, fly to substrate with higher kinetic energy, form the silicon film of adulterated compact crystallization.This film oxygen-free, crystalline quality is near metalluragical silicon.
Review silane SiH
4Glow discharge PCVD deposition micro crystal silicon film, because the energy state that silane is stimulated is lower, compares with non-crystalline silicon, though grain-size has growth, but still containing the hydrogen atom of higher rate, this silicon film is made solar cell can not solve the light decay problem at all.The glow discharge deposition microcrystal silicon, the Siliciumatom group that is stimulated, energy state is low in electric field, its kinestate is the drift behavior, and migration in deposition process, diffusibility is all very poor, can not avoid forming in the film a large amount of lattice imperfections, the random network of this high defective, must come saturated dangling bonds with hydrogen atom, it be unable to do without hydrogen atom again, has limited the raising in photoelectric transformation efficiency and work-ing life greatly so such silicon film is made the solar cell method.
Summary of the invention
The objective of the invention is to overcome the defective and the deficiency of prior art depositing silicon film, a kind of physical vapor deposition device and method thereof of Nano silicon-crystal thin film of solar battery are provided, promptly provide a kind of can be applicable to industrial not hydrogeneous, the deposition method of the silicon film nano material that crystalline quality is good, to obtain the solar cell of high-level efficiency, low cost, ground large-area applications, solve the bottleneck of restriction solar cell development, i.e. the supply problem of silicon materials.
The present invention is based on vacuum plating unit and adopts physical vapor deposition (PVD) method depositing nano polycrystal silicon film.Its objective is such realization: the one, the configuration of the vacuum plating unit of design depositing silicon film, the 2nd, adopt ion beam depositing nano polycrystal silicon film, gas phase doping to prepare the complete process of thin film silicon solar cell PIN structure.
One, device
This device is a kind of configuration based on vacuum plating unit
As Fig. 1, vacuum plating unit is made up of vacuum chamber 3, fire door 4, bleeding point 5, work rest 6, substrate baking heater 7, supporting power supply and Controlling System etc.
In vacuum chamber 3,8 cover plasma gas ion sources are set altogether: lean on fire door 4 places and bleeding point 5 places of leaning in vacuum chamber 3 in vacuum chamber 3 are provided with first second source 1.1 and second second source 1.2 respectively;
Outer wall place in vacuum chamber 3, with fire door 4 and bleeding point 5 mid point lines is symmetry axis, the right is provided with first deposition source 2.1, second deposition source 2.2 and the 3rd deposition source 2.3, and the left side is provided with the 4th deposition source 2.4, the 5th deposition source 2.5 and the 6th deposition source 2.6.
Second deposition source 2.2, the 5th deposition source 2.5 are deposition n type silicon metal usefulness, and all the other quadruplet deposition sources are used to deposit the P type and i layer silicon metal used.During deposition i layer silicon metal, the boron that mixes trace can significantly improve the characteristic of battery.
On the circle of the φ 450mm of vacuum chamber 3 central authorities, be provided with the electric heater 7 of baking heated substrate.After basic fundamental of the present invention on top of, also can adopt the multi-reaction chamber isolation technique, to adapt to the production of more high-grade lamination solar cell.
Two, method
As Fig. 2, on stainless steel substrate 8, metal refining bottom electrode F successively, n type doped silicon film C, i layer intrinsic silicon film D, P type doped silicon film E, electrode of metal B, ITO nesa coating A;
As Fig. 3, or on glass substrate 9, deposit ITO nesa coating A successively, P type doped silicon film E, i layer intrinsic silicon film D, n type doped silicon film C, metallic bottom electrode F.
(1) preparation of n type doped silicon film C
With the surface on the substrate of polished finish and matting is positioned over work rest 6 in the vacuum chamber 3, the technological specification operation of pressing vacuum plating unit, depositing silicon film.In second deposition source 2.2 and the 5th deposition source 2.5, feed the silane gas (SiH of argon diluent
4) and phosphine gas (PH
3), the controlled doping ratio is PH
3: SiH
4=0.1～1%, regulation and control deposition pressure, ion source anode voltage, substrate temperature and speed of rotation etc., on substrate, there is the n type silicon metal of mixing phosphorus to separate out, the silicon film of first second source 1.1 and the second second source 1.2 bombardment growth in real time, impel Siliciumatom ordered arrangement, fine and close growth, the crystal particle scale of silicon metal is that nanometer is to micron order.The thickness of control n type crystallizing silicon layer is 200-300nm.
(2) preparation of i layer intrinsic silicon film
Open first second source 1.1 and second second source 1.2, adopt ionic fluid that n type silicon film is carried out physics and clean, the control anode voltage is 450-500V, removes the floating dust and the not firm atom of bonding of silicon film surface.
Open first deposition source 2.1, the 3rd deposition source 2.3, the 4th deposition source 2.4 and the 6th deposition source 2.6 then, feed silane gas (SiH
4), control deposition pressure, ion source anode voltage, substrate temperature and speed of rotation, growth intrinsic junction crystal silicon on n type silicon metal; Start first second source 1.1 and second second source 1.2 bombardment silicon film in real time, promote grain growing.Its crystal particle scale be nanometer to micron order, the thickness of control i layer silicon film is 1.4～2.0 μ m.The optics of crystal silicon film, electrical parameter are as absorption coefficient, dark conductance σ, optical band gap Eg etc., all the depositing operation with silicon film has very big relation, be according to the actual measurement optics of crystal silicon film, the precise thickness that electrical parameter designs every layer of silicon film.
(3) preparation of p type doped silicon film
Open first second source 1.1 and second second source 1.2, adopt ionic fluid that the crystal silicon film surface is cleaned, the control anode voltage is 450-500V, removes the not firm atom of floating dust and bonding.Open first deposition source 2.1 and the 4th deposition source 2.4 then, perhaps the 3rd deposition source 2.3 and the 6th deposition source 2.6 deposit P type silicon metal, and control boron-doping ratio is B2H
6: SiH
4=0.1～2%, control pressure, ion source anode voltage, substrate temperature and speed of rotation, at I layer silicon metal surface growth P type silicon metal, adopt first second source 1.1 and second second source 1.2 bombardment silicon film surface in good time simultaneously, promote Siliciumatom ordering growth.Its crystal particle scale be nanometer to micron order, the thickness of control P type silicon film is about 100-150nm.
(4) according to the mature experience for preparing non-crystalline silicon or microcrystalline silicon film solar cell, at the top electrode B of surface deposition ITO nesa coating A and collection photoelectric current; At suitable position metal electrode is set, to collect photoelectric current.
The present invention has the following advantages and positively effect:
1, the present invention adopts physical vapor deposition (PVD) method depositing crystalline silicon film, is a kind of deposition method of crystal silicon film of novelty.Silane (SiH
4) and other doping gas when the ion source, be subjected to exciting of high-intensity magnetic field and electric field, reach higher energy state, the protium in the molecule is generated the silicon ion (Si of positively charged by fully ionization
+) and doped element phosphonium ion (P
+), boron ion (B
+), they are subjected to the effect of substrate negative bias voltage and are accelerated, and fly to substrate with higher kinetic energy, generate not hydrogenous silicon film, have eliminated the problem of solar cell light decay from the source.
2, the present invention adopts the assistant depositing ion source, at first substrate is carried out physics and cleans, and obtains the cleanliness factor of atom level, and the activation substrate surface makes silicon film and matrix that higher sticking power be arranged; In the process of growth of silicon film, carrying of assistant depositing ion source emission can be bombarded silicon film by ar-ion beam in real time, increase Siliciumatom in the diffusion of film surface, move the ability of relating to, silicon film is the Siliciumatom ordered arrangement in process of growth, generate silicon metal, improve the crystalline quality of film, help the raising of photoelectric transformation efficiency.
3, the ion source that adopts of the present invention is the ion source commonly used that uses for the growth of solar energy photovoltaic material silicon film, and it is big that it has a line, the regulation of energy wide ranges, and film growth rates is fast, the advantage of the quality better of thin film crystallization.Both at home and abroad very the method for the hot wire process grown junction crystal silicon of paying close attention to is used red-hot tungsten filament emitting electrons, allows the silane ionization, has the shortcoming that beavy metal impurity is stained silicon film.In the ion source commonly used, hall ion source has tungsten filament beavy metal impurity pollution problems equally.The work line of Kaufman ion source and penning ion source is the hundreds of milliampere, because beam intensity is low, is not suitable for the suitability for industrialized production of silicon film.The ion source anode voltage 0-1500V that the present invention adopts is adjustable, and maximum beam is again more than the 20A.
4, the crystal silicon film of the present invention's preparation, depositing temperature is low, can adopt cheap substrate material, can big area deposit uniform silicon film, makes the Ground Application solar cell that basic condition is provided for reducing cost.The silicon film crystalline quality that is obtained is good, is that ideal is efficient, the low consumption photovoltaic material.
In a word, the present invention obtains the crystal silicon film of nanometer to micro-meter scale, for the photoelectric transformation efficiency that improves silicon solar cell, the technical barrier and the application of extensive ground that solve the amorphous silicon solar cell light decay are of great importance, for the bottleneck that solves the development of restriction silicon solar cell, be the supply of silicon materials, development energy-saving and high efficient silicon solar cell also has major application to be worth.
Description of drawings
Fig. 1-vaccum ion coater vacuum chamber cross sectional representation;
Fig. 2-stainless steel substrate depositing silicon film synoptic diagram;
Fig. 3-transparent glass substrate depositing silicon film synoptic diagram.
Wherein:
1-ion beam assisted depositing ion source is called for short second source, comprising:
1.1-the first ion beam assisted depositing ion source is called for short first second source;
1.2-the second ion beam assisted depositing ion source is called for short second second source.
2-silicon deposited film ion source is called for short deposition source, comprising:
2.1-the first silicon deposited film ion source is called for short first deposition source;
2.2-the second silicon deposited film ion source is called for short second deposition source;
2.3-the 3rd silicon deposited film ion source is called for short the 3rd deposition source;
2.4-the 4th silicon deposited film ion source is called for short the 4th deposition source;
2.5-the 5th silicon deposited film ion source is called for short the 5th deposition source;
2.6-the 6th silicon deposited film ion source is called for short the 6th deposition source.
The 3-vacuum chamber.The 4-fire door.The 5-bleeding point.The 6-work rest.
The 7-well heater comprises:
7.1-primary heater; 7.2-secondary heater; 7.3-the 3rd well heater; 7.4-the 4th well heater;
The 8-stainless steel substrate.The 9-glass substrate.The A-ITO nesa coating.
The B-electrode of metal.C-n type doped silicon film.D-i layer intrinsic silicon film.
E-p type doped silicon film.The F-metallic bottom electrode.
Embodiment
Example: with stainless steel substrate 8 is example, and concrete implementing process is described.
1, substrate polishing, cleaning
2, shelve
The stainless steel substrate 8 that cleans up is installed on the work rest 6, be suspended on the turning axle of working in the vacuum chamber 3.The entire operation process will keep the degree of cleaning of substrate and vacuum chamber parts.
3, vacuumize
Close fire door 4, according to working specification pumping high vacuum to 3 * 10 of coating equipment
-3Pa.
4, substrate baking
Vacuum tightness reaches 3 * 10
-3After the Pa, open the baking heating power supply substrate is toasted, 280～300 ℃ of control storing temperatures treat that vacuum tightness returns to 3 * 10
-3Behind the Pa, be incubated 30 minutes.
5, aura cleans
Feed argon gas (Ar), control air pressure is 2Pa, opens grid bias power supply, bias voltage is increased to 1200V, and dutycycle 75%, substrate revolution speed 4 circles/minute; Aura cleaned 15 minutes.
6, ionic fluid cleans
Open first second source 1.1 and second second source 1.2, feed working gas argon gas (Ar), the control vacuum chamber pressure is 0.1Pa.The anode voltage that increases second source 1 is 1000V, beam intensity 4～6A.The control bias voltage is 800V, dutycycle 60%.Substrate temperature and rotating speed are constant.Ionic fluid scavenging period 15～20 minutes.
7, deposition n type doped silicon film C
Second deposition source 2.2 and the 5th deposition source 2.5 feed silane (SiH
4) and doping gas phosphine (PH
3), controlled doping is than being PH
3: SiH
4=0.1～1%, vacuum chamber pressure 1.0～2.0Pa.The anode voltage of regulating and control second deposition source 2.2 and the 5th deposition source 2.5 is 250-300V, beam intensity 10A; The anode voltage of second source 1 is 300～350V, beam intensity 15A.Bias voltage 150～200V, dutycycle 50%.Substrate temperature and rotating speed are constant.The gauge control of n type silicon film is at 200～300nm.Close second deposition source 2.2 and the 5th deposition source 2.5 after reaching.
8, deposition i layer intrinsic silicon film D
With first second source 1.1 and second second source 1.2, anode voltage be adjusted into 450～500V, line is controlled at 8～10A, adopts ionic fluid to sedimentary n type doped silicon film C surface cleaning 10 minutes, removes the not firm atom of surperficial floating dust and bonding.Open first deposition source 2.1, the 3rd deposition source 2.3, the 4th deposition source 2.4 and the 6th deposition source 2.6 then, feed SiH
4Gas, the control deposition pressure is 1.0～2.0Pa, control deposition source anode voltage 250～300V, beam intensity 8～10A, the anode voltage of regulation and control second source 1 is 300～350V, beam intensity is 5A; Bias voltage and dutycycle, substrate temperature, rotating speed and vacuum chamber pressure are constant.Controlling diaphragm thickness is 1.5～2.0 μ m, is closed in the deposition source 2 of work after reaching.
9, deposition p type doped silicon film E
The anode voltage of adjusting first second source 1.1 and second second source 1.2 is 450～500V, and line is controlled at 8～10A, ionic fluid is carried out on i layer intrinsic silicon film D surface cleaned 10 minutes; Open first deposition source 2.1 and the 4th deposition source 2.4 then, perhaps the 3rd deposition source 2.3 and the 6th deposition source 2.6 feed silane (SiH
4) and doping gas diborane (B
2H
6), the ratio of controlling them is B
2H
6: SiH
4=0.1～2.0%.The anode voltage of control deposition source is 250～300V, beam intensity 8～10A; The anode voltage of first second source 1.1 and second second source 1.2 is 300～350V, beam intensity 15A; Vacuum chamber pressure, bias voltage and dutycycle, substrate temperature and rotating speed are constant.The thickness of control P type doped silicon film E is 100～150nm, is closed in the deposition ion source of work and grid bias power supply, source of the gas after reaching.
10, the vacuum annealing thermal treatment of silicon film
Lifting substrate storing temperature to 400～450 ℃, vacuum tightness keeps 3 * 10
-3Pa, 60 minutes vacuum heat treatment time.
11, blowing out
Close substrate baking heating power supply, stop the substrate rotation, high-vacuum pump continues to move to substrate temperature and drops to below 200 ℃, can stop high-vacuum pump; Substrate temperature is reduced to below 80 ℃, just can take out substrate from vacuum chamber.
Claims (2)
1. the physical vapor deposition device of a Nano silicon-crystal thin film of solar battery comprises vacuum plating unit, and vacuum plating unit is made up of vacuum chamber (3), fire door (4), bleeding point (5), work rest (6), well heater (7), supporting power supply and Controlling System; It is characterized in that:
Locating and the bleeding point (5) that leans on vacuum chamber (3) in locates to be provided with respectively first second source (1.1) and second second source (1.2) in vacuum chamber (3) by fire door (4);
Outer wall place in vacuum chamber (3), with fire door (4) and bleeding point (5) mid point line is symmetry axis, the right is provided with first deposition source (2.1), second deposition source (2.2) and the 3rd deposition source (2.3), and the left side is provided with the 4th deposition source (2.4), the 5th deposition source (2.5) and the 6th deposition source (2.6);
Be provided with well heater (7) in vacuum chamber 3 central authorities.
2. application rights requires the physical vapor deposition device of 1 described a kind of Nano silicon-crystal thin film of solar battery to carry out sedimentary method, it is characterized in that:
On stainless steel substrate (8), metal refining bottom electrode (F) successively, n type doped silicon film (C), i layer intrinsic silicon film (D), P type doped silicon film (E), electrode of metal (B), ITO nesa coating (A);
Or on glass substrate (9), deposit ITO nesa coating (A) successively, p type doped silicon film (E), i layer intrinsic silicon film (D), n type doped silicon film (C), metallic bottom electrode (F);
According to the mature experience of preparation non-crystalline silicon or microcrystalline silicon film solar cell, at the top electrode (B) of surface deposition ITO nesa coating (A) and collection photoelectric current; At suitable position metal electrode is set;
The preparation of described n type doped silicon film (C):
Second deposition source (2.2) and the 5th deposition source (2.5) feed silane and doping gas phosphine, and controlled doping is than being PH
3: SiH
4=0.1～1%, vacuum chamber pressure 1.0～2.0Pa; The anode voltage of regulating and control second deposition source (2.2) and the 5th deposition source (2.5) is 250-300V, beam intensity 10A; The anode voltage of second source (1) is 300～350V, beam intensity 15A; Bias voltage 150～200V, dutycycle 50%; Substrate temperature and rotating speed are constant; The gauge control of n type doped silicon film (C) is closed second deposition source (2.2) and the 5th deposition source (2.5) at 200～300nm after reaching;
The preparation of described i layer intrinsic silicon film (D):
The anode voltage of first second source (1.1) and second second source (1.2) is adjusted into 450～500V, line is controlled at 8～10A, adopt ionic fluid to the surface cleaning of sedimentary n type doped silicon film (C) or P type doped silicon film (E) 10 minutes, remove the not firm atom of surperficial floating dust and bonding, open first deposition source (2.1), the 3rd deposition source (2.3), the 4th deposition source (2.4) and the 6th deposition source (2.6) then, feed SiH
4Gas, the control deposition pressure is 1.0～2.0Pa, control deposition source anode voltage 250～300V, beam intensity 8～10A, the anode voltage of regulation and control second sources (1) is 300～350V, beam intensity is 5A; Bias voltage and dutycycle, substrate temperature, rotating speed and vacuum chamber pressure are constant; Controlling diaphragm thickness is 1.5～2.0 μ m, is closed in the deposition source of work after reaching;
The preparation of described p type doped silicon film (E):
The anode voltage of adjusting first second source (1.1) and second second source (1.2) is 450～500V, and line is controlled at 8～10A, ionic fluid is carried out on the surface of i layer intrinsic silicon film (D) or ITO nesa coating (A) cleaned 10 minutes; Open first deposition source (2.1) and the 4th deposition source (2.4) then, perhaps the 3rd deposition source (2.3) and the 6th deposition source (2.6) feed silane and doping gas diborane, and the ratio of controlling them is B
2H
6: SiH
4=0.1～2.0%; The anode voltage of deposition source of work is controlled to be 250～300V, beam intensity 8～10A; The anode voltage of first second source (1.1) and second second source (1.2) is 300～350V, beam intensity 15A; Vacuum chamber pressure, bias voltage and dutycycle, substrate temperature and rotating speed are constant; The thickness of control P type doped silicon film (E) is 100～150nm, is closed in the deposition source of work and grid bias power supply, source of the gas after reaching.
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| CN101378089A (en) | 2007-08-28 | 2009-03-04 | 鸿富锦精密工业（深圳）有限公司 | Solar battery |
| CN100519835C (en) * | 2007-11-01 | 2009-07-29 | 中国科学院电工研究所 | Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell |
| CN102104088B (en) * | 2009-12-17 | 2014-03-12 | 吉林庆达新能源电力股份有限公司 | Method for depositing amorphous silicon film in solar battery production |
| CN111101104A (en) * | 2020-01-10 | 2020-05-05 | 安徽纯源镀膜科技有限公司 | Method for metalizing surface of insulating material |
| CN111041430A (en) * | 2020-01-10 | 2020-04-21 | 安徽纯源镀膜科技有限公司 | Production process of high-temperature-resistant diamond-like carbon film layer |
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| WO2001043965A1 (en) * | 1999-12-14 | 2001-06-21 | The Penn State Research Foundation | Thermal barrier coatings and electron-beam, physical vapor deposition for making same |
| CN1598047A (en) * | 2004-08-31 | 2005-03-23 | 北京科技大学 | Process for preparing large area high quality anti-crack on diamant film |
| US20050239659A1 (en) * | 2004-04-08 | 2005-10-27 | Xuming Xiong | Biaxially-textured film deposition for superconductor coated tapes |
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| DE19522923A1 (en) * | 1995-06-23 | 1997-03-20 | Verein Fuer Das Forschungsinst | Mfr. of crystalline, amorphous and epitaxial semiconductor layers on substrate |
| WO2001043965A1 (en) * | 1999-12-14 | 2001-06-21 | The Penn State Research Foundation | Thermal barrier coatings and electron-beam, physical vapor deposition for making same |
| US20050239659A1 (en) * | 2004-04-08 | 2005-10-27 | Xuming Xiong | Biaxially-textured film deposition for superconductor coated tapes |
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