CN107749396A - A kind of plasma of diffusion crystal-silicon solar cell carves side method - Google Patents
A kind of plasma of diffusion crystal-silicon solar cell carves side method Download PDFInfo
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- CN107749396A CN107749396A CN201711012335.5A CN201711012335A CN107749396A CN 107749396 A CN107749396 A CN 107749396A CN 201711012335 A CN201711012335 A CN 201711012335A CN 107749396 A CN107749396 A CN 107749396A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000009792 diffusion process Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000011143 downstream manufacturing Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 229910000085 borane Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of plasma of diffusion crystal-silicon solar cell carves side method, carves side by carrying out plasma after diffusion source layer deposits, the method for then carrying out High temperature diffusion again, solves the problems, such as the edge current leakage that crystal-silicon solar cell diffusion easily causes.The present invention combines the method that deposition Solid Source carries out High temperature diffusion again, suitable for the preparation of n-type monocrystalline silicon or polysilicon PERT solar cells, it can also be used to the expansion phosphorus of p-type monocrystalline silicon or polysilicon, expands boron etc..By such quarter crack approach, silicon chip only need to use conventional HF acid solutions conveniently to remove the diffusion source layer for being changed into oxide layer after diffusion, include the oxide layer of side.Thoroughly solve the problems, such as edge current leakage, and have existing crystalline silicon producing line technical compatibility, cost is also very low.
Description
Technical field
The invention belongs to solar cell and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
In diffusion method prepares the production of crystal-silicon solar cell, during reducing crystal-silicon solar cell use
Electric leakage, will typically be carried out on " quarter side ", i.e., crystal silicon chip etching edge falls to certain thickness, or with laser by the side of silicon chip
Edge cuts away a part, the short-circuit leaky between the silicon film for the front and rear surfaces difference doping type that can so completely cut off silicon chip.
But in existing technical scheme, side step is all that a certain process node after the completion of silicon chip diffusion technique enters at the moment
OK.Wherein laser trimming is typically employed in after solar cell is fully finished, and this method can cause a part of ablation to damage at edge
Hinder area, cause the decline of solar cell performance；The method that plasma carves side is commonly used in after the completion of the passivation film preparation of silicon chip two sides,
It will also result in fringe region and forms a layer defects, cause to leak electricity；The method of wet-chemical chamber is most commonly used that now, and it is used in
In secondarily etched process after the completion of diffusion technique, the etching edge of silicon chip is fallen into a part with chemical reagent, this method causes
Damage it is small, but the region that can be caused silicon chip front and rear surfaces and originally should not be etched is etched away.
The content of the invention
The purpose of the present invention is to propose to a kind of plasma of diffusion crystal-silicon solar cell to carve side method, preferably
Edge current leakage caused by solving the problems, such as crystal-silicon solar cell diffusion technique, the diffusion separated to deposit and spread source and diffusing step
The supporting more excellent quarter side technology of technology path.
The present invention is achieved by the following technical solutions.
A kind of plasma of diffusion crystal-silicon solar cell of the present invention carves side method, as follows：
The diffusion source film layer of one side or two sides deposition containing foreign atom of the silicon chip of pretreatment will first be carried out；It will need again
Carve while silicon chip be stacked together carry out quarter with plasma etching machine while；Then the silicon chip that quarter side is terminated is put into high temperature furnace
Row diffusion.
The silicon chip can be monocrystalline silicon or polysilicon, can be n-type conduction or p-type electric-conducting.
Diffusion source film layer can be the amorphous silicon membrane or microcrystalline silicon film of heavy doping, or the oxidation of heavy doping
Silicon thin film or silicon nitride film, or the composite film of this several film, or the heavily doped silicon layer that ion implanting is formed.
The high temperature furnace refers to tube type high-temperature furnace, and the diffusion process mixes in pure air or nitrogen oxygen atmosphere or argon oxygen
Carried out in gas.
The method for the silicon chip wet-chemical that the diffusion terminates removes the oxide layer and residual diffusion source layer of silicon chip surface.
Invention has the technical effect that：Side is carved by carrying out plasma before diffusion, can easily remove silicon chip side deposition
Diffusion source layer, and because now not yet spreading, need the thickness that etches away smaller；In addition, the edge caused by etching
Damage, below, diffusion technique can be recovered during carrying out, and the oxidation of silicon chip side also can remove one in diffusion process
Divide lattice quality bad superficial layer；Furthermore by such quarter crack approach, silicon chip need to only use conventional HF acid molten after diffusion
Liquid can conveniently remove the diffusion source layer for being changed into oxide layer, include the oxide layer of side.Thoroughly solve the problems, such as edge current leakage, and with
Existing crystalline silicon producing line technical compatibility, cost are also very low.
Embodiment
The present invention will be described further by following examples.
Embodiment 1.
Plasma-assisted chemical vapour deposition method is used with silane:Borine flow-rate ratio is 1:0.1 ratio, in cleaning and texturing
Good n-type polysilicon chip surface deposits amorphous silicon membrane that a layer thickness is 30 nanometers as diffusion source；Then pure air again
950 DEG C are carried out in atmosphere, the heat treatment of 1 hour；Silicon chip surface oxide layer is removed using HF after taking-up；Using plasma is auxiliary again
Chemical vapour deposition technique is helped with silane：Phosphine flow-rate ratio 1:The one side that 0.01 ratio does not expand boron in polysilicon deposits a layer thickness
For 20nm amorphous silicon layer；The silicon chip for depositing end is stacked together and is put into plasma etching machine, etches away about 1 micron of edge
Thickness；Then silicon chip is put into tubular type heat treatment and 840 DEG C is carried out under pure air atmosphere, the annealing of 20 minutes；Will
Silicon chip enters removal silicon chip surface oxide layer in HF solution；The passivated reflection reducing for carrying out follow-up two surfaces of silicon chip penetrates the heavy of layer
The printing-sintering of product and silver grating line.N-type PERT structural polysilicon silicon solar cells are finally given.
Embodiment 2.
Plasma-assisted chemical vapour deposition method is used with silane:Borine flow-rate ratio is 1:0.06 ratio, made in cleaning
It is 50 nanometers of amorphous silicon membrane as diffusion source that the good n-type monocrystalline silicon sheet surface of suede, which deposits a layer thickness,；Then clean empty
950 DEG C are carried out in gas atmosphere, the heat treatment of 1 hour；Silicon chip surface oxide layer is removed using HF after taking-up；Using plasma again
Auxiliary chemical vapor deposition method is with silane：Phosphine flow-rate ratio 1:The one side that 0.01 ratio does not expand boron in monocrystalline silicon deposits one layer of phosphorus
Atomic thickness is 30nm amorphous silicon layer；The silicon chip for depositing end is stacked together and is put into plasma etching machine, etches away side
The thickness that about 10 microns of edge；Then silicon chip is put into tubular type heat treatment and 840 DEG C, 20 minutes is carried out under pure air atmosphere
Annealing；Silicon chip is immersed in removal silicon chip surface oxide layer in HF solution；The passivation for carrying out follow-up two surfaces of silicon chip subtracts
The deposition in reflecting layer and the printing-sintering of silver grating line.N-type PERT structure single crystal silicon solar cells are finally given.
Embodiment 3.
Hot filament CVD is used with silane：Phosphine flow-rate ratio 1:0.01 ratio is in the cleaned p-type of making herbs into wool
Polysilicon surface deposits the amorphous silicon layer that a layer thickness is 50nm；The silicon chip for depositing end is stacked together and is put into plasma quarter
Erosion machine, etch away the thickness at about 500 nanometers of edge；Then silicon chip is put into tubular type heat treatment under pure air atmosphere
820 DEG C of row, the annealing of 30 minutes；Silicon chip is entered into removal silicon chip surface oxide layer in HF solution；Then silicon chip back side is carried out
Chemical etching polishes, then carries out the passivated reflection reducing on follow-up two surfaces of silicon chip and penetrate the deposition and silver grating line, back side Al-BSF of layer
Printing-sintering.P-type PERC structure single crystal silicon solar cells are finally given.
Embodiment 4.
Magnetron sputtering deposition method is used to deposit amorphous of a layer thickness for 20nm in the cleaned p-type monocrystalline silicon surface of making herbs into wool
Silicon oxide layer；The silicon chip for depositing end is stacked together and is put into plasma etching machine, etches away edge about 200nm thickness；
Then silicon chip is put into tubular type heat treatment and 850 DEG C is carried out under pure air atmosphere, the annealing of 20 minutes；Silicon chip is entered
Silicon chip surface oxide layer is removed into HF solution；Then it is diffused the silk of face nitride deposition, Al-BSF and front silver grating line
Net printing-sintering.P-type Al-BSF single crystal silicon solar cell is finally given.
Embodiment 5.
Magnetron sputtering deposition method is used to deposit nitridation of a layer thickness for 30nm in the cleaned p-type monocrystalline silicon surface of making herbs into wool
Silicon layer；The silicon chip for depositing end is stacked together and is put into plasma etching machine, etches away edge about 500nm thickness；Then
Silicon chip is put into tubular type heat treatment 850 DEG C are carried out under pure air atmosphere, the annealing of 30 minutes；Silicon chip is entered into HF
Silicon chip surface oxide layer is removed in solution；Then it is diffused the screen printing of face nitride deposition, Al-BSF and front silver grating line
Brush sintering.P-type Al-BSF single crystal silicon solar cell is finally given.
Embodiment 6.
The n-type silicon chip that one side expands boron will be prepared for, will be formed using ion implantation in the one side of non-diffused with boron a kind of heavily doped
The silicon layer of miscellaneous P elements, the silicon chip for injecting end is stacked together and is put into plasma etching machine, etches away about 5 microns of edge
Thickness；Then silicon chip is put into tubular type heat treatment and 850 DEG C is carried out under pure air atmosphere, the annealing of 30 minutes；By silicon
Piece enters removal silicon chip surface oxide layer in HF solution；Then the preparation of passivation on double surfaces antireflective film is carried out, then carries out two-sided silver
The preparation of grid line.N-type PERT solar cells are finally given.
Embodiment 7.
Plasma-assisted chemical vapour deposition method is used with silane:Borine flow-rate ratio is 1:0.1 ratio, in cleaning and texturing
Good n-type polysilicon chip surface deposits amorphous silicon membrane that a layer thickness is 30 nanometers as diffusion source；Then in pure air
1150 DEG C are carried out in atmosphere, the heat treatment of 1 hour；Silicon chip surface oxide layer is removed using HF after taking-up；Using plasma again
Auxiliary chemical vapor deposition method is with silane：Phosphine flow-rate ratio 1:The one side that 0.01 ratio does not expand boron in polysilicon deposits a thickness
Spend the amorphous silicon layer for 20nm；The silicon chip for depositing end is stacked together and is put into plasma etching machine, it is micro- to etch away edge about 1
The thickness of rice；Then silicon chip is put into tubular type heat treatment and 840 DEG C is carried out under pure air atmosphere, the annealing of 25 minutes；
Silicon chip is entered into removal silicon chip surface oxide layer in HF solution；Silicon chip two sides is respectively etched into about 300nm with mixed acid solution again
Thickness, carry out cleaning, drying.Then the passivated reflection reducing for carrying out follow-up two surfaces of silicon chip penetrates the deposition and silver grating line of layer
Printing-sintering.N-type PERT structural polysilicon silicon solar cells are finally given.
Claims (7)
1. a kind of plasma of diffusion crystal-silicon solar cell carves side method, it is characterized in that after diffusion source layer deposition,
Diffusion technique is performed etching before carrying out using the method for plasma etching to silicon chip edge.
2. according to the method for claim 1, it is characterized in that techniqueflow is：To first carry out the silicon chip of pretreatment one side or
Person two sides deposits the diffusion source film layer containing foreign atom；The silicon chip for carving side will be needed to be stacked together again and use plasma etching
Machine carries out quarter side；Then the silicon chip that quarter side is terminated is put into diffusion furnace and be diffused, then carry out downstream process.
3. method according to claim 1 or 2, it is characterized in that the silicon chip is monocrystalline silicon or polysilicon.
4. method according to claim 1 or 2, it is characterized in that the silicon chip is n-type conduction or p-type electric-conducting.
5. according to the method for claim 2, it is characterized in that diffusion source film layer for heavy doping amorphous silicon membrane or
Microcrystalline silicon film, be either heavy doping silicon oxide film or silicon nitride film or for foregoing several films composite film,
Or the heavily doped silicon layer formed for ion implanting.
6. method according to claim 1 or 2, it is characterized in that the stove that the diffusion technique uses is tube type high-temperature furnace,
Diffusion process is carried out in pure air or nitrogen oxygen atmosphere or argon oxygen gas mixture.
7. method according to claim 1 or 2, it is characterized in that after diffusion technique terminates, silicon chip is gone with the method for wet-chemical
Except the oxide layer and residual diffusion source layer of silicon chip surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711012335.5A CN107749396B (en) | 2017-10-26 | 2017-10-26 | Plasma edge-etching method for diffusion-made crystalline silicon solar cell |
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| CN201711012335.5A CN107749396B (en) | 2017-10-26 | 2017-10-26 | Plasma edge-etching method for diffusion-made crystalline silicon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545673A (en) * | 2018-10-12 | 2019-03-29 | 南昌大学 | A kind of crystal-silicon solar cell anaerobic method of diffusion |
| CN111463317A (en) * | 2020-04-08 | 2020-07-28 | 浙江正泰太阳能科技有限公司 | P-type passivated contact solar cell and preparation method thereof |
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| CN107749396B (en) | 2020-04-14 |
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