CN101546787A - Method for processing low-attenuation high-efficiency floating-zone silicon solar battery - Google Patents
Method for processing low-attenuation high-efficiency floating-zone silicon solar battery Download PDFInfo
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- CN101546787A CN101546787A CN200810035171A CN200810035171A CN101546787A CN 101546787 A CN101546787 A CN 101546787A CN 200810035171 A CN200810035171 A CN 200810035171A CN 200810035171 A CN200810035171 A CN 200810035171A CN 101546787 A CN101546787 A CN 101546787A
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Abstract
The invention relates to a method for processing a low-attenuation high-efficiency floating-zone silicon solar battery, which comprises the steps of: step one, the treatment of a surface structure; step two, diffusion; step three, etching; step four, wet oxidation; step five, PECVD deposition; step six, printing; and step seven, sintering. The method mainly overcomes the defects existing in the prior raw materials and the prior art; and the output power of the solar battery is obviously improved through the treatment, and the attenuation of the solar battery is reduced at the same time.
Description
Technical field:
The present invention relates to solar cell, particularly a kind of low-attenuation high-efficiency floating-zone silicon solar battery processing method.
Background technology:
Melt silicon and refer to high purity silicon (FZ Silicon) in the district, near 100000ohm-cm, very high minority carrier life time τ is arranged〉60us, with respect to we existing silicon chip (CZ Silicon) τ〉10us exceeds a lot, is the preferred material of making the low-attenuation high-efficiency solar battery sheet at present.
How when improving transformation efficiency, the manufacturing cost of control floating-zone silicon solar battery is so that be our problem demanding prompt solution can be more widely used in the future.
The preparation technology of floating-zone silicon solar battery requires each link in the mill to be improved raising, guaranteeing the high efficiency while, farthest reduces its decay in actual environment.
Existing manufacture craft is as follows:
Attenuate, making herbs into wool, diffusion, etching, making antireflective coating (being PECVD), printing, sintering.
Summary of the invention:
The object of the present invention is to provide a kind of low-attenuation high-efficiency floating-zone silicon solar battery processing method, mainly solve existing defective in above-mentioned existing raw material and the technology, through handling, the power output of solar cell is significantly improved, and reduces its decay simultaneously.
Technical scheme of the present invention is:
A kind of efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that it comprises the steps:
The first step, surface texture is handled, and promptly makes pyramid structure at silicon chip surface, reduces reflection of light;
Second step, diffusion, promptly the silicon chip surface of finishing in the first step carries out p-n junction making and the processing of surperficial wet oxygen;
In the 3rd step, etching is about to the silicon chip that second step finished and carries out edge treated, guarantees the output of photogenerated current;
The 4th step, wet oxygen, promptly the silicon chip surface of finishing in the 3rd step carries out oxidation, improves its stability;
The 5th step, the PECVD deposition, promptly ready-made silicon chip carries out the silicon nitride deposition in the 4th step;
In the 6th step, printing is promptly carried out electrode in ready-made silicon chip upper and lower surface of the 5th step and is made, and guarantees the collection of photogenerated current;
In the 7th step, sintering is about to the silicon chip that the 6th step finished and carries out high-temperature process, guarantees electrode and silicon chip good Ohmic contact, improves transformation efficiency.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described first step technology is:
(1) silicon chip is placed reducer carry out initial reaction;
(2) silicon chip after initial reaction is finished is clean with rinsed with deionized water, is placed on to carry out surface texture in the Woolen-making liquid and handle again;
(3) it is clean with rinsed with deionized water to finish the silicon chip that surface texture handles, and is placed on to carry out surperficial deionization in the pickle and handle again
(4) silicon chip that will finish surperficial deionization processing carries out rinsing with deionized water, and oven dry;
Main technologic parameters in this technology is:
Attenuate: 80 ℃-90 ℃, solution composition: 30% NaOH solution,
Time 0.5-2min;
Making herbs into wool: 80 ℃-90 ℃, solution composition: 1.2% NaOH solution,
Time 30-40min;
Deionization: 60 ℃-70 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 15-25min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in this first step technology is:
Attenuate: 85 ℃, solution composition: 30% NaOH solution,
Time 1min;
Making herbs into wool: 85 ℃, solution composition: 1.2% NaOH solution,
Time 35min;
Deionization: 65 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 20min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described second step process is:
(1) silicon chip after will spreading is well put into diffusion furnace, and equitemperature rises to assigned temperature, feeds big nitrogen and guarantees that atmosphere is pure in the furnace chamber;
(2) beginning aerating oxygen, another road nitrogen is brought phosphorus oxychloride into body of heater inside through behind the container of phosphorus oxychloride;
(3) etc. after reaction finishes, silicon chip is taken out, close nitrogen and oxygen to get final product;
Major parameter in this second step process is:
Oxygen flow: 1.2-1.5L/min; Little nitrogen flow: 0.3-0.5L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 800-860 ℃;
Reaction time: 40-50min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in this diffusion technology is:
Oxygen flow: 1.3L/min; Little nitrogen flow: 0.4L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 845 ℃;
Reaction time: 45min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described three step process is:
(1) silicon chip after will spreading well is stacked together, and can not put into etching machine furnace chamber more than 250pcs at most;
(2) press the " RUN " button, carry out automatic process according to the program that has write;
(3) after etching technics was finished, silicon chip takes out put into frock;
(4) silicon chip that takes out is put into 10%HF solution, soaked 2 minutes;
(5) the immersion back is clean with rinsed with deionized water, oven dry;
The major parameter of this etching technics is:
Carbon tetrafluoride: oxygen=6:1-10:1; Reaction time: 10-15min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in this three step process is:
Carbon tetrafluoride: oxygen=7.9-1; Reaction time: 12min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described the 4th step process is:
(1) silicon chip after good is put into diffusion furnace with etching, and equitemperature rises to assigned temperature;
(2) beginning aerating oxygen, oxygen is brought water into body of heater inside through behind the container of deionized water;
(3) etc. after reaction finishes, its taking-up is got final product;
Main technologic parameters in this wet oxygen technology is:
Oxygen flow: 1.5-1.7L/min;
Assigned temperature: 500 ℃-700 ℃;
Time: 4-6min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in the 4th step process is:
Oxygen flow: 1.6L/min;
Assigned temperature: 600 ℃;
Time: 5min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the idiographic flow of described the 5th step process is:
The technical papers that click and operation have been chosen, each processing step content is specific as follows:
(1) advances boat;
(2) vacuumize slowly;
(3) vacuumize soon;
(4) pressure regulation sees whether the boiler tube internal pressure is stable;
(5) standby 1, the preheating silicon chip;
(6) leak detection;
(7) pressure regulation, the pressure regulation for the first time of leak detection back;
(8) pressure regulation, the pressure regulation for the second time of leak detection back;
(9) deposit, the examination build-up of luminance;
(10) deposit begins reaction;
(11) internal-response gas is taken out in deposit;
(12) clean logical nitrogen;
(13) clean, off-response gas continues logical nitrogen;
(14) vacuumize, close all valves;
(15) fill nitrogen, return to atmospheric condition;
(16) move back boat, get sheet;
The main technologic parameters of this PECVD operating procedure is:
Silane: ammonia=1:6-1:8;
Temperature: 360 ℃-440 ℃;
Time: 12-13min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in the 5th step process is:
Silane: ammonia=1:7;
Temperature: 400 ℃;
Time: 12min.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described the 6th step process is:
(1) at uncoated surface printing back electrode;
(2) oven dry;
(3) after printing back electrode, republish back of the body electric field;
(4) oven dry;
(5) at the surface printing gate electrode of plated film;
(6) oven dry;
Main technologic parameters is:
Bake out temperature is 200 ℃.
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the concrete operations flow process of described the 7th step process is:
(1) sintering furnace is warming up to the temperature that configures;
(2) silicon chip that prints is once put into by the sintering furnace import;
(3) connect silicon chip in the sintering furnace exit, transfer to test and carry out the electrical property classification;
This sintering process major parameter is:
Belt speed: 200-250inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、700—740、850—880、850—880。
Described efficient low attenuation range melts the processing method of silicon solar cell, it is characterized in that the optimizing technology parameters in the 7th step is:
Belt speed: 235inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、720、860、865。
By said method, the present invention compared with prior art has following advantage:
Advantage 1: the inventive method has increased the step deionization, therefore compares with existing method, and the product of preparation attenuation rate in actual use reduces by 15%---and 20%, reason is the foreign ion of clean surface, it is compound to the ion of electronics conversion process to reduce photon;
Advantage 2: the inventive method has increased the step wet oxygen, therefore compare with existing method, the product of preparation transformation efficiency in actual use improves 1.5%---and 2%, reason is that double layer antireflection coating has increased the shift motion of photon at battery surface, has increased the probability that photon is converted into electronics.
Embodiment:
The invention provides a kind of low-attenuation high-efficiency floating-zone silicon solar battery processing method, its concrete processing step can be consulted following embodiment.
Embodiment one: a kind of low-attenuation high-efficiency floating-zone silicon solar battery processing method, and concrete steps are:
The first step, surface texture is handled, and promptly makes pyramid structure at silicon chip surface, reduces reflection of light;
Second step, diffusion, promptly the silicon chip surface of finishing in the first step carries out p-n junction making and the processing of surperficial wet oxygen;
In the 3rd step, etching is about to the silicon chip that second step finished and carries out edge treated, guarantees the output of photogenerated current;
The 4th step, wet oxygen, promptly the silicon chip surface of finishing in the 3rd step carries out oxidation, improves its stability;
The 5th step, the PECVD deposition, promptly ready-made silicon chip carries out the silicon nitride deposition in the 4th step;
In the 6th step, printing is promptly carried out electrode in ready-made silicon chip upper and lower surface of the 5th step and is made, and guarantees the collection of photogenerated current;
In the 7th step, sintering is about to the silicon chip that the 6th step finished and carries out high-temperature process, guarantees electrode and silicon chip good Ohmic contact, improves transformation efficiency.
The concrete operations flow process of described first step technology is:
(1) silicon chip is placed reducer carry out initial reaction;
(2) silicon chip after initial reaction is finished is clean with rinsed with deionized water, is placed on to carry out surface texture in the Woolen-making liquid and handle again;
(3) it is clean with rinsed with deionized water to finish the silicon chip that surface texture handles, and is placed on to carry out surperficial deionization in the pickle and handle again
(4) silicon chip that will finish surperficial deionization processing carries out rinsing with deionized water, and oven dry;
Main technologic parameters in this technology is:
Attenuate: 80 ℃-90 ℃, solution composition: 30% NaOH solution,
Time 0.5-2min;
Making herbs into wool: 80 ℃-90 ℃, solution composition: 1.2% NaOH solution,
Time 30-40min;
Deionization: 60 ℃-70 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 15-25min.
Optimizing technology parameters in this first step technology is:
Attenuate: 85 ℃, solution composition: 30% NaOH solution,
Time 1min;
Making herbs into wool: 85 ℃, solution composition: 1.2% NaOH solution,
Time 35min;
Deionization: 65 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 20min.
The silicon chip surface state that this preferred parameter technology is made is uniform and stable, and surface reflectivity reduces by 5%.
The concrete operations flow process of described second step process is:
(1) silicon chip after will spreading is well put into diffusion furnace, and equitemperature rises to assigned temperature, feeds big nitrogen and guarantees that atmosphere is pure in the furnace chamber;
(2) beginning aerating oxygen, another road nitrogen is brought phosphorus oxychloride into body of heater inside through behind the container of phosphorus oxychloride;
(3) etc. after reaction finishes, silicon chip is taken out, close nitrogen and oxygen to get final product;
Major parameter in this second step process is:
Oxygen flow: 1.2-1.5L/min; Little nitrogen flow: 0.3-0.5L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 800-860 ℃;
Reaction time: 40-50min.
Optimizing technology parameters in this diffusion technology is:
Oxygen flow: 1.3L/min; Little nitrogen flow: 0.4L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 845 ℃;
Reaction time: 45min.
The silicon chip surface square resistance that this preferred parameter is made is stable, and each point value differs 2 Ω * cm, and each point value of silicon chip surface square resistance that adopts not preferred parameter process to make differs 10 Ω * cm.
The concrete operations flow process of described three step process is:
(1) silicon chip after will spreading well is stacked together, and can not put into etching machine furnace chamber more than 250pcs at most; (48 the plasma etching machines in Hunan)
(2) press the " RUN " button, carry out automatic process according to the program that has write;
(3) after etching technics is finished, frock is put in the silicon chip taking-up;
(4) silicon chip that takes out is put into 10%HF solution, soaked 2 minutes;
(5) the immersion back is clean with rinsed with deionized water, oven dry;
The major parameter of this etching technics is:
Carbon tetrafluoride: oxygen=6:1-10:1; Reaction time: 10-15min.
Optimizing technology parameters in this three step process is:
Carbon tetrafluoride: oxygen=7.9-1; Time: 12min.
The silicon chip edge resistance that this preferred parameter technology is made is big, generally can reach 30k Ω; Adopt silicon chip edge resistance that not preferred parameter process makes generally at 20k Ω.
The concrete operations flow process of described the 4th step process is:
(1) silicon chip after good is put into diffusion furnace with etching, and equitemperature rises to assigned temperature;
(2) beginning aerating oxygen, oxygen is brought water into body of heater inside through behind the container of deionized water;
(3) etc. after reaction finishes, its taking-up is got final product;
Main technologic parameters in this wet oxygen technology is:
Oxygen flow: 1.5-1.7L/min;
Assigned temperature: 500 ℃-700 ℃;
Time: 4-6min.
Optimizing technology parameters in the 4th step process is:
Oxygen flow: 1.6L/min;
Temperature: 600 ℃;
Time: 5min.
The silicon oxide film of the silicon chip surface that this preferred parameter technology is made is stable.
The concrete operations flow process of described the 5th step process is:
The technical papers that click and operation have been chosen, each processing step content is specific as follows:
(1) advances boat;
(2) vacuumize slowly;
(3) vacuumize soon;
(4) pressure regulation sees whether the boiler tube internal pressure is stable;
(5) standby 1, the preheating silicon chip;
(6) leak detection;
(7) pressure regulation, the pressure regulation for the first time of leak detection back;
(8) pressure regulation, the pressure regulation for the second time of leak detection back;
(9) deposit, the examination build-up of luminance;
(10) deposit begins reaction;
(11) internal-response gas is taken out in deposit;
(12) clean logical nitrogen;
(13) clean, off-response gas continues logical nitrogen;
(14) vacuumize, close all valves;
(15) fill nitrogen, return to atmospheric condition;
(16) move back boat, get sheet;
The main technologic parameters of this PECVD operating procedure is:
Silane: ammonia=1:6-1:8;
Temperature: 360 ℃-440 ℃;
Time: 12-13min.
Optimizing technology parameters in the 5th step process is:
Silane: ammonia=1:7;
Temperature: 400 ℃;
Time: 12min.
The silicon chip surface silicon nitride film layer that this preferred parameter technology is made is even, does not have obvious aberration, and color remains on bluish violet.The silicon chip surface silicon nitride film layer aberration that adopts not preferred parameter process to make is bigger, is light brown sometimes, is sky blue sometimes.
The concrete operations flow process of described the 6th step process is:
(1) at uncoated surface printing back electrode;
(2) oven dry;
(3) after printing back electrode, republish back of the body electric field;
(4) oven dry;
(5) at the surface printing gate electrode of plated film;
(6) oven dry;
Main technologic parameters is:
Bake out temperature is 200 ℃.
The concrete operations flow process of described the 7th step process is:
(1) sintering furnace is warming up to the temperature that configures;
(2) silicon chip that prints is once put into by the sintering furnace import;
(3) connect silicon chip in the sintering furnace exit, transfer to test and carry out the electrical property classification;
This sintering process major parameter is:
Belt speed: 200-250inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、700—740、850—880、850—880。
Optimizing technology parameters in the 7th step is:
Belt speed: 235inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、720、860、865。
The battery sheet that this preferred parameter technology is finally made is compared with not preferred parameter, and average efficiency exceeds 0.2%, and disqualification rate reduces by 0.4%.
Being preferred embodiment of the present invention only in sum, is not to be used for limiting practical range of the present invention.Be that all equivalences of doing according to the content of the present patent application claim change and modification, all should be technology category of the present invention.
Claims (14)
1, a kind of efficient low attenuation range processing method of melting silicon solar cell is characterized in that it comprises the steps:
The first step, surface texture is handled, and promptly makes pyramid structure at silicon chip surface, reduces reflection of light;
Second step, diffusion, promptly the silicon chip surface of finishing in the first step carries out p-n junction making and the processing of surperficial wet oxygen;
In the 3rd step, etching is about to the silicon chip that second step finished and carries out edge treated, guarantees the output of photogenerated current;
The 4th step, wet oxygen, promptly the silicon chip surface of finishing in the 3rd step carries out oxidation, improves its stability;
The 5th step, the PECVD deposition, promptly ready-made silicon chip carries out the silicon nitride deposition in the 4th step;
In the 6th step, printing is promptly carried out electrode in ready-made silicon chip upper and lower surface of the 5th step and is made, and guarantees the collection of photogenerated current;
In the 7th step, sintering is about to the silicon chip that the 6th step finished and carries out high-temperature process, guarantees electrode and silicon chip good Ohmic contact, improves transformation efficiency.
2, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described first step technology is:
(1) silicon chip is placed reducer carry out initial reaction;
(2) silicon chip after initial reaction is finished is clean with rinsed with deionized water, is placed on to carry out surface texture in the Woolen-making liquid and handle again;
(3) it is clean with rinsed with deionized water to finish the silicon chip that surface texture handles, and is placed on to carry out surperficial deionization in the pickle and handle again
(4) silicon chip that will finish surperficial deionization processing carries out rinsing with deionized water, and oven dry;
Main technologic parameters in this technology is:
Attenuate: 80 ℃-90 ℃, solution composition: 30% NaOH solution,
Time 0.5-2min;
Making herbs into wool: 80 ℃-90 ℃, solution composition: 1.2% NaOH solution,
Time 30-40min;
Deionization: 60 ℃-70 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 15-25min.
3, the efficient low attenuation range according to claim 2 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in this first step technology is:
Attenuate: 85 ℃, solution composition: 30% NaOH solution,
Time 1min;
Making herbs into wool: 85 ℃, solution composition: 1.2% NaOH solution,
Time 35min;
Deionization: 65 ℃, solution composition: HCl:H
2O
2: H
2O=1:1:6
Time 20min.
4, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described second step process is:
(1) silicon chip after will spreading is well put into diffusion furnace, and equitemperature rises to assigned temperature, feeds big nitrogen and guarantees that atmosphere is pure in the furnace chamber;
(2) beginning aerating oxygen, another road nitrogen is brought phosphorus oxychloride into body of heater inside through behind the container of phosphorus oxychloride;
(3) etc. after reaction finishes, silicon chip is taken out, close nitrogen and oxygen to get final product;
Major parameter in this second step process is:
Oxygen flow: 1.2-1.5L/min; Little nitrogen flow: 0.3-0.5L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 800-860 ℃;
Reaction time: 40-50min.
5, the efficient low attenuation range according to claim 4 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in this diffusion technology is:
Oxygen flow: 1.3L/min; Little nitrogen flow: 0.4L/min;
Big nitrogen flow: 30L/min;
Assigned temperature: 845 ℃;
Reaction time: 45min.
6, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described three step process is:
(1) silicon chip after will spreading well is stacked together, and can not put into etching machine furnace chamber more than 250pcs at most;
(2) press the " RUN " button, carry out automatic process according to the program that has write;
(3) after etching technics was finished, silicon chip takes out put into frock;
(4) silicon chip that takes out is put into 10%HF solution, soaked 2 minutes;
(5) the immersion back is clean with rinsed with deionized water, oven dry;
The major parameter of this etching technics is:
Carbon tetrafluoride: oxygen=6:1-10:1; Reaction time: 10-15min.
7, the efficient low attenuation range according to claim 6 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in this three step process is:
Carbon tetrafluoride: oxygen=7.9-1; Reaction time: 12min.
8, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described the 4th step process is:
(1) silicon chip after good is put into diffusion furnace with etching, and equitemperature rises to assigned temperature;
(2) beginning aerating oxygen, oxygen is brought water into body of heater inside through behind the container of deionized water;
(3) etc. after reaction finishes, its taking-up is got final product;
Main technologic parameters in this wet oxygen technology is:
Oxygen flow: 1.5-1.7L/min;
Assigned temperature: 500 ℃-700 ℃;
Time: 4-6min.
9, the efficient low attenuation range according to claim 8 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in the 4th step process is:
Oxygen flow: 1.6L/min;
Assigned temperature: 600 ℃;
Time: 5min.
10, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the idiographic flow of described the 5th step process is:
The technical papers that click and operation have been chosen, each processing step content is specific as follows:
(1) advances boat;
(2) vacuumize slowly;
(3) vacuumize soon;
(4) pressure regulation sees whether the boiler tube internal pressure is stable;
(5) standby 1, the preheating silicon chip;
(6) leak detection;
(7) pressure regulation, the pressure regulation for the first time of leak detection back;
(8) pressure regulation, the pressure regulation for the second time of leak detection back;
(9) deposit, the examination build-up of luminance;
(10) deposit begins reaction;
(11) internal-response gas is taken out in deposit;
(12) clean logical nitrogen;
(13) clean, off-response gas continues logical nitrogen;
(14) vacuumize, close all valves;
(15) fill nitrogen, return to atmospheric condition;
(16) move back boat, get sheet;
The main technologic parameters of this PECVD operating procedure is:
Silane: ammonia=1:6-1:8;
Temperature: 360 ℃-440 ℃;
Time: 12-13min.
11, the efficient low attenuation range according to claim 10 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in the 5th step process is:
Silane: ammonia=1:7;
Temperature: 400 ℃;
Time: 12min.
12, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described the 6th step process is:
(1) at uncoated surface printing back electrode;
(2) oven dry;
(3) after printing back electrode, republish back of the body electric field;
(4) oven dry;
(5) at the surface printing gate electrode of plated film;
(6) oven dry;
Main technologic parameters is:
Bake out temperature is 200 ℃.
13, the efficient low attenuation range according to claim 1 processing method of melting silicon solar cell is characterized in that the concrete operations flow process of described the 7th step process is:
(1) sintering furnace is warming up to the temperature that configures;
(2) silicon chip that prints is once put into by the sintering furnace import;
(3) connect silicon chip in the sintering furnace exit, transfer to test and carry out the electrical property classification;
This sintering process major parameter is:
Belt speed: 200-250inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、700—740、850—880、850—880。
14, the efficient low attenuation range according to claim 13 processing method of melting silicon solar cell is characterized in that the optimizing technology parameters in the 7th step is:
Belt speed: 235inch/min;
Each warm area temperature be (℃)
300、300、330、540、560、640、720、860、865。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810035171A CN101546787A (en) | 2008-03-26 | 2008-03-26 | Method for processing low-attenuation high-efficiency floating-zone silicon solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810035171A CN101546787A (en) | 2008-03-26 | 2008-03-26 | Method for processing low-attenuation high-efficiency floating-zone silicon solar battery |
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|---|---|
| CN101546787A true CN101546787A (en) | 2009-09-30 |
Family
ID=41193785
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| CN200810035171A Pending CN101546787A (en) | 2008-03-26 | 2008-03-26 | Method for processing low-attenuation high-efficiency floating-zone silicon solar battery |
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| CN102270703A (en) * | 2011-07-30 | 2011-12-07 | 宁波尤利卡太阳能科技发展有限公司 | Method for making selective emitter crystalline silicon solar cell |
| CN102368509A (en) * | 2011-09-13 | 2012-03-07 | 中联科伟达（兴安）精密科技有限公司 | Infrared spectrum control method applied to solar cell slice sintering process |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN102522331A (en) * | 2012-01-10 | 2012-06-27 | 浙江鸿禧光伏科技股份有限公司 | Method for increasing shunt resistance of crystalline-silicon solar cell |
| CN102569510A (en) * | 2011-12-31 | 2012-07-11 | 常州天合光能有限公司 | Method for recovering power attenuation of solar assembly manually at fixed period |
| CN102820377A (en) * | 2012-08-27 | 2012-12-12 | 恒基光伏电力科技股份有限公司 | Solar cell production process |
| CN102856176A (en) * | 2012-09-27 | 2013-01-02 | 合肥海润光伏科技有限公司 | Tubular plasma enhanced chemical vapor deposition (PECVD) film coating method |
| CN102983227A (en) * | 2012-12-13 | 2013-03-20 | 百力达太阳能股份有限公司 | Method of avoiding poor appearances of solar cells after oxidation |
| CN103515471A (en) * | 2012-06-19 | 2014-01-15 | 上海宇兆能源科技有限公司 | Method for producing monocrystalline silicon solar energy double-face cell |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN107706269A (en) * | 2017-09-25 | 2018-02-16 | 江西展宇新能源股份有限公司 | A kind of diffusion technique of solar energy polycrystal battery P N knots and preceding surface treatment method |
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| CN102270703B (en) * | 2011-07-30 | 2012-12-19 | 宁波尤利卡太阳能科技发展有限公司 | Method for making selective emitter crystalline silicon solar cell |
| CN102270703A (en) * | 2011-07-30 | 2011-12-07 | 宁波尤利卡太阳能科技发展有限公司 | Method for making selective emitter crystalline silicon solar cell |
| CN102368509B (en) * | 2011-09-13 | 2013-03-20 | 兴安吉阳设备有限公司 | Infrared spectrum control method applied to solar cell slice sintering process |
| CN102368509A (en) * | 2011-09-13 | 2012-03-07 | 中联科伟达（兴安）精密科技有限公司 | Infrared spectrum control method applied to solar cell slice sintering process |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN102569510A (en) * | 2011-12-31 | 2012-07-11 | 常州天合光能有限公司 | Method for recovering power attenuation of solar assembly manually at fixed period |
| CN102522331A (en) * | 2012-01-10 | 2012-06-27 | 浙江鸿禧光伏科技股份有限公司 | Method for increasing shunt resistance of crystalline-silicon solar cell |
| CN103515471A (en) * | 2012-06-19 | 2014-01-15 | 上海宇兆能源科技有限公司 | Method for producing monocrystalline silicon solar energy double-face cell |
| CN102820377A (en) * | 2012-08-27 | 2012-12-12 | 恒基光伏电力科技股份有限公司 | Solar cell production process |
| CN102856176A (en) * | 2012-09-27 | 2013-01-02 | 合肥海润光伏科技有限公司 | Tubular plasma enhanced chemical vapor deposition (PECVD) film coating method |
| CN102983227A (en) * | 2012-12-13 | 2013-03-20 | 百力达太阳能股份有限公司 | Method of avoiding poor appearances of solar cells after oxidation |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN107706269A (en) * | 2017-09-25 | 2018-02-16 | 江西展宇新能源股份有限公司 | A kind of diffusion technique of solar energy polycrystal battery P N knots and preceding surface treatment method |
| CN107749396A (en) * | 2017-10-26 | 2018-03-02 | 江西硅辰科技有限公司 | A kind of plasma of diffusion crystal-silicon solar cell carves side method |
| CN107749396B (en) * | 2017-10-26 | 2020-04-14 | 江西硅辰科技有限公司 | Plasma edge-etching method for diffusion-made crystalline silicon solar cell |
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Application publication date: 20090930 |