CN102263153A - Improved diffusion method of solar cells - Google Patents
Improved diffusion method of solar cells Download PDFInfo
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- CN102263153A CN102263153A CN2010101848325A CN201010184832A CN102263153A CN 102263153 A CN102263153 A CN 102263153A CN 2010101848325 A CN2010101848325 A CN 2010101848325A CN 201010184832 A CN201010184832 A CN 201010184832A CN 102263153 A CN102263153 A CN 102263153A
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- oxygen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses an improved diffusion method of solar cells, comprising the following steps: step one, selecting a silicon raw material and a P-type conduction mode; step two, diffusing, wherein silicon wafers have a chemical reaction with oxygen and phosphorus oxychloride at the temperature of 850-900 DEG C to generate phosphorus, phosphorus pentachloride, phosphorus pentoxide and chlorine; step three, introducing oxygen for propulsion at a high temperature and introducing the oxygen at the speed 3L/min after the diffusion step is ended as well as reacting the introduced oxygen with PC15 which is not exhausted completely to generate phosphorus; step four, introducing oxygen for propulsion and then continuing to introduce high nitrogen at the speed of 3L/min, stopping introducing low nitrogen, and introducing oxygen at the speed of 3L/min; and step five, finishing the steps to obtain the silicon wafers of which the resistance of surface squares is 48-52omega. The diffusion method can be used to simply control the square resistance, increase monolithic uniformity of the squares and improve the conversion efficiency of the solar cells. The diffusion method is more uniform, is easy and convenient to operate and is low in cost.
Description
Technical field
The present invention relates to a kind of method of diffusion, particularly a kind of method of diffusion that improves solar cell.
Background technology
The crystal silicon cell manufacturing process has entered standardization at present, and its each operation production process is as follows:
1, enoughization knitted on chemical cleaning and surface: monocrystalline making herbs into wool, make silicon chip surface form tiny evenly, cover completely that pyramid reduces reflectivity to strengthen light absorption;
2, diffusion: make PN junction, form solar cell with photovoltaic effect;
3, etching: remove battery sheet edge PN junction and avoid the solar cell short circuit;
4., deposition antireflective coating: the mass production main flow is plated silicon nitride film at present, and refractive index can be reduced to the silicon chip surface reflectivity about 4% 2.0～2.15;
5, print electrode: the electric energy output of solar cell conversion;
6, sintering: the electrode and the battery sheet of printing are formed good Ohmic contact.
According to the process condition on the present production process: silicon chip surface mixes concentration should be about 5*10e19atom/cm3, and same degree of depth atomic concentration is identical.Mixing concentration, to cross conference be that the PN junction bandwidth is sharply shunk, and causes reverse saturation current to increase, and lowers and open pressure; Simultaneously, the too high meeting of surface concentration forms dead layer on the surface, and a large amount of photo-generated carriers will be by compound.So the square resistance of the silicon chip surface after the diffusion is even more good more.
At the shortcoming and defect of prior art, the invention provides a kind of method of diffusion that improves solar cell.
To achieve these goals, the measure that the present invention taked:
A kind of method of diffusion that improves solar cell:
The first step: adopt the silicon raw material, conduction type P type;
Second step: diffusion: with above-mentioned silicon raw material in 850～900 ℃ of atmosphere with oxygen, phosphorus oxychloride generation chemical reaction produces phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine; Main chemical equation is as follows:
Si+O2＝SiO2
5POCl3=P2O5+3PCl5 (high temperature)
4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO2；
The 3rd step: the logical oxygen of high temperature advances, and aerating oxygen 3L/min again behind the diffusing step continues reaction with the PCl5 that does not run out of and produces phosphorus: 4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO；
The 4th step: logical oxygen advances the back to continue to feed big nitrogen 30L/min, stops logical little nitrogen, and oxygen 3L/min continues 600s; Temperature is controlled at 830～900 ℃;
The 5th step: through above-mentioned steps, obtaining surperficial square is 48～52 Ω/ silicon chip;
The temperature of described second step diffusion is controlled at: 850～890 ℃; Diffusion gas flow: big nitrogen: 25～35L/min; Little nitrogen 1.1L/min; Oxygen 1.5～2.8L/min; Duration is 2000s;
The temperature that described the 3rd step high temperature advances is controlled at 870～890 ℃; Gas flow: big nitrogen 25L/min; Stop logical little nitrogen; Oxygen: 3L/min; Time 500s.
Beneficial effect of the present invention: the better simply control square resistance of energy, the monolithic uniformity of increase square; Can improve the conversion efficiency of solar cell, improve diffusion back square resistance, and more even, easy to implement the method, easy and simple to handle, with low cost.
Embodiment
A kind of method of diffusion that improves solar cell:
The first step: adopt the silicon raw material, conduction type P type; Thickness 180～220um, resistivity 1～6 Ω cm, conduction type P type is: doped with boron in semiconductor silicon (P) is conductive materials.
Second step: diffusion: with the silicon chosen in the first step in 850～900 ℃ of atmosphere with oxygen, phosphorus oxychloride generation chemical reaction produces phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine; Main chemical equation is as follows:
Si+O2＝SiO2
5POCl3=P2O5+3PCl5 (high temperature)
4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO2；
The 3rd step: the logical oxygen of high temperature advances, and aerating oxygen 3L/min again behind the diffusing step continues reaction with the PCl5 that does not run out of and produces phosphorus: 4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO；
The 4th step: logical oxygen advances the back to continue to feed big nitrogen 30L/min, stops logical little nitrogen, and oxygen 3L/min continues 600s; Temperature is controlled at 830～900 ℃;
The 5th step: through above-mentioned steps, obtaining surperficial square is 48～52 Ω/ silicon chip, and wherein, represents square resistance.
The temperature of described second step diffusion is controlled at: 850～890 ℃; Diffusion gas flow: big nitrogen: 25～35L/min; Little nitrogen 1.1L/miN; Oxygen 1.5～2.8L/min; Duration is 2000s.
The temperature that described the 3rd step high temperature advances is controlled at 870～890 ℃; Gas flow: big nitrogen 25L/min; Stop logical little nitrogen; Oxygen: 3L/min; Time 500s.
Parameter list on the silicon chip electrical property that use this method obtains:
High temperature advances the back:
| Voc(mV) | Isc(mA) | FF | Eff |
| 622.9 | 5590.2 | 78.5 | 17.65 |
| 623.1 | 5601.5 | 78.3 | 17.65 |
| 623.3 | 5613.6 | 78.1 | 17.65 |
| 623.4 | 5614.7 | 78.1 | 17.66 |
| 623.8 | 5577.6 | 78.7 | 17.68 |
| 622.7 | 5594.8 | 78.6 | 17.68 |
| 623.2 | 5603.7 | 78.4 | 17.69 |
| 623.2 | 5591.4 | 78.6 | 17.69 |
| 622.4 | 5606.9 | 78.5 | 17.71 |
| 623.6 | 5618.2 | 78.4 | 17.75 |
Wherein: Voc (mV) is: open circuit voltage; Isc (mA) is: short circuit current; The FF fill factor, curve factor; Eff is: transformation efficiency.
The uniformity of resistance:
| Central point | Angle 1 | Angle 2 | Angle 3 | Angle 4 |
| 49 | 47 | 44 | 46 | 46 |
| 52 | 46 | 48 | 47 | 48 |
| 50 | 48 | 46 | 47 | 48 |
| 48 | 46 | 45 | 45 | 44 |
| 49 | 47 | 47 | 43 | 45 |
| 48 | 45 | 44 | 42 | 44 |
| 51 | 46 | 48 | 45 | 44 |
| 50 | 48 | 46 | 45 | 44 |
| 50 | 43 | 45 | 46 | 44 |
| 49 | 45 | 44 | 44 | 46 |
Wherein: central point is the resistance in centre position; Angle 1, angle 2, angle 3 and angle 4 are for representing four resistance on the angle respectively.
Those skilled in the art's simple change and replacement all are within protection scope of the present invention in this area.
Claims (3)
1. method of diffusion that improves solar cell is characterized in that:
The first step: adopt the silicon raw material, conduction type P type;
Second step: diffusion: above-mentioned silicon raw material in 850～900 ℃ of atmosphere with oxygen, phosphorus oxychloride generation chemical reaction, generation phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine; Main chemical equation is as follows:
Si+O2＝SiO2
5POCl3=P2O5+3PCl5 (high temperature)
4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO2；
The 3rd step: the logical oxygen of high temperature advances, and aerating oxygen 3L/min again behind the diffusing step continues reaction with the PCl5 that does not run out of and produces phosphorus: 4PCl5+5O2=2P2O5+10Cl2 (high temperature)
2P2O5+5Si＝4P+5SiO；
The 4th step: logical oxygen advances the back to continue to feed big nitrogen 30L/min, stops logical little nitrogen, and oxygen 3L/min continues 600s; Temperature is controlled at 830～900 ℃;
The 5th step: through above-mentioned steps, obtaining surperficial square is 48～52 Ω/ silicon chip.
2. a kind of method of diffusion that improves solar cell according to claim 1 is characterized in that: the temperature of described second step diffusion is controlled at: 850～890 ℃; Diffusion gas flow: big nitrogen: 25～35L/min; Little nitrogen 1.1L/min; Oxygen 1.5～2.8L/min; Duration is 2000s.
3. a kind of method of diffusion that improves solar cell according to claim 1 is characterized in that: the temperature that described the 3rd step high temperature advances is controlled at 870～890 ℃; Gas flow: big nitrogen 25L/min; Stop logical little nitrogen; Oxygen: 3L/min; Time 500s.
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| CN2010101848325A CN102263153A (en) | 2010-05-27 | 2010-05-27 | Improved diffusion method of solar cells |
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| CN2010101848325A CN102263153A (en) | 2010-05-27 | 2010-05-27 | Improved diffusion method of solar cells |
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| CN102263153A true CN102263153A (en) | 2011-11-30 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703987A (en) * | 2012-06-08 | 2012-10-03 | 天威新能源控股有限公司 | Low-temperature phosphorus gettering diffusion process based on removal of metal impurities in polycrystalline silicon |
| CN104009116A (en) * | 2014-05-12 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Manufacturing method of diamond line cutting polycrystalline silicon wafer battery |
| CN104766909A (en) * | 2015-04-24 | 2015-07-08 | 英利集团有限公司 | PN junction manufacturing method and solar cell piece |
| CN105870217A (en) * | 2015-01-12 | 2016-08-17 | 浙江光隆能源科技股份有限公司 | Improved diffusion technology of polycrystalline solar cell |
| CN106206847A (en) * | 2016-08-10 | 2016-12-07 | 横店集团东磁股份有限公司 | A kind of super low concentration POCl based on low pressure diffusion furnace3high temperature diffusion process |
| CN109166794A (en) * | 2018-07-18 | 2019-01-08 | 常州大学 | A kind of multiple step format phosphorous doping methods of high efficiency, low cost crystal silicon battery |
| CN111041560A (en) * | 2019-12-13 | 2020-04-21 | 阳光中科（福建）能源股份有限公司 | Improved phosphorus diffusion furnace and method for removing phosphorus oxychloride by using same |
-
2010
- 2010-05-27 CN CN2010101848325A patent/CN102263153A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703987A (en) * | 2012-06-08 | 2012-10-03 | 天威新能源控股有限公司 | Low-temperature phosphorus gettering diffusion process based on removal of metal impurities in polycrystalline silicon |
| CN102703987B (en) * | 2012-06-08 | 2015-03-11 | 天威新能源控股有限公司 | Low-temperature phosphorus gettering diffusion process based on removal of metal impurities in polycrystalline silicon |
| CN104009116A (en) * | 2014-05-12 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Manufacturing method of diamond line cutting polycrystalline silicon wafer battery |
| CN105870217A (en) * | 2015-01-12 | 2016-08-17 | 浙江光隆能源科技股份有限公司 | Improved diffusion technology of polycrystalline solar cell |
| CN105870217B (en) * | 2015-01-12 | 2017-05-17 | 浙江光隆能源科技股份有限公司 | Improved diffusion technology of polycrystalline solar cell |
| CN104766909A (en) * | 2015-04-24 | 2015-07-08 | 英利集团有限公司 | PN junction manufacturing method and solar cell piece |
| CN104766909B (en) * | 2015-04-24 | 2018-09-07 | 英利集团有限公司 | PN junction production method and solar battery sheet |
| CN106206847A (en) * | 2016-08-10 | 2016-12-07 | 横店集团东磁股份有限公司 | A kind of super low concentration POCl based on low pressure diffusion furnace3high temperature diffusion process |
| CN106206847B (en) * | 2016-08-10 | 2017-12-19 | 横店集团东磁股份有限公司 | A kind of super low concentration POCl based on low pressure diffusion furnace3High temperature diffusion process |
| CN109166794A (en) * | 2018-07-18 | 2019-01-08 | 常州大学 | A kind of multiple step format phosphorous doping methods of high efficiency, low cost crystal silicon battery |
| CN111041560A (en) * | 2019-12-13 | 2020-04-21 | 阳光中科（福建）能源股份有限公司 | Improved phosphorus diffusion furnace and method for removing phosphorus oxychloride by using same |
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Application publication date: 20111130 |
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Addressee: Ningbo Pepsi Solar Energy Technology Co., Ltd. Finance Department Document name: Notification of Approving Refund |
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