CN104009116A - Manufacturing method of diamond line cutting polycrystalline silicon wafer battery - Google Patents
Manufacturing method of diamond line cutting polycrystalline silicon wafer battery Download PDFInfo
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- CN104009116A CN104009116A CN201410197889.7A CN201410197889A CN104009116A CN 104009116 A CN104009116 A CN 104009116A CN 201410197889 A CN201410197889 A CN 201410197889A CN 104009116 A CN104009116 A CN 104009116A
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- silicon wafer
- battery
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- wool
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 32
- 239000010432 diamond Substances 0.000 title claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 238000005520 cutting process Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 44
- 235000008216 herbs Nutrition 0.000 claims description 30
- 210000002268 wool Anatomy 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 21
- 238000002310 reflectometry Methods 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 7
- 238000003854 Surface Print Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 3
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical class Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 description 3
- 229910001961 silver nitrate Inorganic materials 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910003803 Gold(III) chloride Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229940076131 gold trichloride Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a diamond line cutting polycrystalline silicon wafer battery, and belongs to the technical field of solar batteries. The manufacturing method of the diamond line cutting polycrystalline silicon wafer battery comprises the following steps that (1) a P-type polycrystalline silicon wafer is pre-cleaned, a damage layer is removed, and the silicon wafer without the damage layer is obtained; (2) the silicon wafer without the damage layer is arranged in an etching device reaction chamber to be etched in a dry mode; (3) phosphorous source diffusion is carried out on the surface of the silicon wafer etched in the dry mode, and the silicon wafer subjected to phosphorous source diffusion is obtained; (4) the silicon wafer subjected to phosphorous source diffusion is etched in a wet mode, a SiNx thin film is deposited on the front surface of the silicon wafer in a PECVD mode, and the silicon wafer subjected to deposition is obtained; (5) silver paste and aluminum paste are printed on the back surface of the silicon wafer subjected to deposition, the silicon wafer is then dried, positive silver is printed on the front surface of the silicon wafer, then the silicon wafer is sintered, and the battery finished product is obtained. The manufacturing method of the diamond line cutting polycrystalline silicon wafer battery improves shortwave response, improves the conversion efficiency of the solar battery, is wide in application range, is good in battery shape effect, and is high in solar conversion efficiency.
Description
Technical field
The invention belongs to technical field of solar batteries, be specifically related to a kind of battery production method of diamond wire cutting polysilicon chip.
Background technology
Diamond wire cutting technique is also referred to as concretion abrasive cutting technique, it is to utilize plating or resin bonded method that diamond abrasive is attached to steel wire surface, diamond wire is directly acted on to silicon rod or the generation grinding of silicon ingot surface, reach the effect of cutting, compare with conventional slurry cutting technique, diamond wire cutting speed is fast, production capacity is high, cutting accuracy is high, the features such as spillage of material is low, but silicon chip surface stria clearly, it is very low that the line of silicon chip splits density, and follow-up cell making process need to improve or in conjunction with other modes.
Diamond wire cutting battery is used conventional making herbs into wool technical approach, silicon chip surface is brighter, making herbs into wool back reflection rate is greater than 30%, by metal catalytic methods such as silver nitrate or gold trichlorides, clean, though battery reflectivity decreases, the uniformity of silicon face has impact, causes the pattern aberration of battery surface more serious, and likely metal ion is removed imperfectly, and the quality of solar cell and life-span and diffusion furnace tube are all impacted.Optical loss is one of significant obstacle hindering efficiency of solar cell raising, the light reflection that reduces solar battery surface can utilize antireflective coating and anti-reflection structure, and the technology such as conventional making herbs into wool, silver nitrate cleaning, gold trichloride cleaning can not meet the battery process of silicon wafer cut by diamond wire and make demand.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of manufacture method of battery of diamond wire cutting polysilicon chip, the method technology stability is good, can guarantee the quality that this battery is higher, and battery pattern is effective, and solar energy conversion efficiency is high.
Technical scheme: for achieving the above object, the present invention adopts following technical scheme:
The manufacture method of the battery of diamond wire cutting polysilicon chip, comprises the steps:
1) P type polysilicon chip is carried out to prerinse, surface HNO
3remove damage layer with HF mixed solution and obtain removing the silicon chip after damage layer;
2) silicon chip of removing after damage is placed on to fluff making device reative cell, passes into gas SF
6with O
2carry out dry method making herbs into wool, the time is 10min, obtains the silicon chip after dry method making herbs into wool;
3) silicon chip surface after dry method making herbs into wool carries out the diffusion of phosphorus source, adopts POCl
3liquid phosphorus diffuse source is prepared P-N knot, 830 ℃ of diffusion temperatures, and the time is 80min, square resistance is 60～90ohm, obtains the silicon chip after the diffusion of phosphorus source;
4) silicon chip after the diffusion of phosphorus source is carried out to wet etching, then, at its front surface PECVD deposition SiNx film, obtain post-depositional silicon chip;
5) in post-depositional silicon chip back side difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
Step 1), in, the thickness of described removal damage layer is 2.5～4 μ m.
Step 2), in, the reflectivity of the silicon chip after the making herbs into wool of RIE dry method is 5～15%.
Step 4) in, described SiNx antireflective coating THICKNESS CONTROL is at 70～90nm, and reflectivity is 0.5%～3%, and refractive index is 1.9～2.3.
The resistivity of described P type polysilicon chip is 1～3 Ω cm.
The battery of diamond wire cutting polysilicon chip prepared by employing said method.
Inventive principle: use reactive ion etching RIE making herbs into wool technology after surface removal damage layer, obtain desirable suede structure and the solar cell of producing antiradar reflectivity, improve short wave response, improve conversion efficiency of solar cell; And traditional cleaning by metal catalytic methods such as silver nitrate or gold trichlorides, though battery reflectivity decreases (reflectivity >10%), but the uniformity of silicon face has impact to cause the pattern aberration of battery surface more serious, and likely metal ion removal is imperfect, affect quality and the life-span of solar cell.
Beneficial effect: the manufacture method of the battery of diamond wire cutting polysilicon chip of the present invention, simple and the good stability of technique, after first removing damage, use reactive ion etching RIE making herbs into wool technology, obtain desirable suede structure and the solar cell of producing antiradar reflectivity, improve short wave response, improve conversion efficiency of solar cell, applied widely, both the battery that had been applicable to silicon wafer cut by diamond wire is made, also the follow-up battery that is applicable to other cutting mode silicon chips is made, battery pattern is effective, and solar energy conversion efficiency is high, has good practicality.
Accompanying drawing explanation
Fig. 1 is the structural representation of the battery of diamond wire cutting polysilicon chip.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described further.
As shown in Figure 1, it is matrix that the structure of the battery of diamond wire cutting polysilicon chip be take P type diamond wire cutting polysilicon chip, silicon chip carries out prerinse rear surface and removes the processing of damage layer, use the making herbs into wool of reactive ion etching (RIE) technology, after making herbs into wool completes, front surface carries out the diffusion of phosphorus source, preparation P-N knot, on surface, form N+ emitter, after wet etching, at front surface PECVD deposition layer of sin x antireflection film, in the back side of battery difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
PECVD, plasma enhanced chemical vapor deposition, it is to make by microwave or radio frequency etc. the gas ionization that contains film composed atom, in part, form plasma, and plasma chemistry activity is very strong, be easy to react, on substrate, deposit desired film, for chemical reaction can be carried out at lower temperature, utilized the activity of plasma to promote reaction.
RIE, full name is Reactive Ion Etching, reactive ion etching, a kind of microelectronics dry corrosion process, it is a kind of of dry ecthing, and this etched principle is when applying the high frequency voltage of 10～100MHZ between plate electrode, to produce the sheath of hundreds of micron thickness, put into therein sample, ion high-speed impact sample and complete chemical reaction etching.
Embodiment 1
The P type polysilicon chip that the resistivity of usining is 1 Ω cm is as silicon wafer cut by diamond wire, and the manufacture method of the battery of diamond wire cutting polysilicon chip, comprises the steps:
1) P type polysilicon chip is carried out to prerinse, surface HNO
3removing damage layer thickness with HF mixed solution is 3.5 μ m, obtains removing the silicon chip after damage layer;
2) silicon chip of removing after damage is placed on to fluff making device reative cell, passes into gas SF
6with O
2carry out dry method making herbs into wool, the time is 10min, and making herbs into wool back reflection rate is 5%, obtains the silicon chip after dry method making herbs into wool, and dry method making herbs into wool is herein RIE technology;
3) silicon chip surface after dry method making herbs into wool carries out the diffusion of phosphorus source, adopts POCl
3liquid phosphorus diffuse source is prepared P-N knot, 830 ℃ of diffusion temperatures, and the time is 80min, square resistance is 80ohm, obtains the silicon chip after the diffusion of phosphorus source;
4) silicon chip after the diffusion of phosphorus source being carried out to wet etching, is then 80nm at its front surface PECVD deposition SiNx antireflective coating thickness, and reflectivity is 1.3%, and the SiNx film that refractive index is 2.05, obtains post-depositional silicon chip;
5) in post-depositional silicon chip back side difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
Embodiment 2
The P type polysilicon chip that the resistivity of usining is 2 Ω cm is as silicon wafer cut by diamond wire, and the manufacture method of the battery of diamond wire cutting polysilicon chip, comprises the steps:
1) P type polysilicon chip is carried out to prerinse, surface HNO
3removing damage layer thickness with HF mixed solution is 2.5 μ m, obtains removing the silicon chip after damage layer;
2) silicon chip of removing after damage is placed on to fluff making device reative cell, passes into gas SF
6with O
2carry out dry method making herbs into wool, the time is 10min, and making herbs into wool back reflection rate is 10%, obtains the silicon chip after dry method making herbs into wool, and dry method making herbs into wool is herein RIE technology;
3) silicon chip surface after dry method making herbs into wool carries out the diffusion of phosphorus source, adopts POCl
3liquid phosphorus diffuse source is prepared P-N knot, 830 ℃ of diffusion temperatures, and the time is 80min, square resistance is 60ohm, obtains the silicon chip after the diffusion of phosphorus source;
4) silicon chip after the diffusion of phosphorus source being carried out to wet etching, is then 70nm at its front surface PECVD deposition SiNx antireflective coating thickness, and reflectivity is 0.5%, and the SiNx film that refractive index is 1.9, obtains post-depositional silicon chip;
5) in post-depositional silicon chip back side difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
Embodiment 3
The P type polysilicon chip that the resistivity of usining is 3 Ω cm is as silicon wafer cut by diamond wire, and the manufacture method of the battery of diamond wire cutting polysilicon chip, comprises the steps:
1) P type polysilicon chip is carried out to prerinse, surface HNO
3removing damage layer thickness with HF mixed solution is 4 μ m, obtains removing the silicon chip after damage layer;
2) silicon chip of removing after damage is placed on to fluff making device reative cell, passes into gas SF
6with O
2carry out dry method making herbs into wool, the time is 10min, and making herbs into wool back reflection rate is 15%, obtains the silicon chip after dry method making herbs into wool, and dry method making herbs into wool is herein RIE technology;
3) silicon chip surface after dry method making herbs into wool carries out the diffusion of phosphorus source, adopts POCl
3liquid phosphorus diffuse source is prepared P-N knot, 830 ℃ of diffusion temperatures, and the time is 80min, square resistance is 90ohm, obtains the silicon chip after the diffusion of phosphorus source;
4) silicon chip after the diffusion of phosphorus source being carried out to wet etching, is then 90nm at its front surface PECVD deposition SiNx antireflective coating thickness, and reflectivity is 3%, and the SiNx film that refractive index is 2.3, obtains post-depositional silicon chip;
5) in post-depositional silicon chip back side difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
Embodiment 4
The battery that the prepared battery of embodiment 1～3 and conventional method are made carries out performance comparison, as shown in table 1:
The contrast of table 1 battery conversion efficiency
Adopt as shown in Table 1 silicon wafer cut by diamond wire of the present invention to use the present invention to make battery, obtain desirable suede structure and the solar cell of producing antiradar reflectivity, improved short wave response, improved conversion efficiency of solar cell.
Claims (5)
1. the manufacture method of the battery of diamond wire cutting polysilicon chip, is characterized in that: comprise the steps:
1) P type polysilicon chip is carried out to prerinse, surface HNO
3remove damage layer with HF mixed solution and obtain removing the silicon chip after damage layer;
2) silicon chip of removing after damage is placed on to fluff making device reative cell, passes into gas SF
6with O
2carry out dry method making herbs into wool, the time is 10min, obtains the silicon chip after dry method making herbs into wool;
3) silicon chip surface after dry method making herbs into wool carries out the diffusion of phosphorus source, adopts POCl
3liquid phosphorus diffuse source is prepared P-N knot, 830 ℃ of diffusion temperatures, and the time is 80min, square resistance is 60 ~ 90ohm, obtains the silicon chip after the diffusion of phosphorus source;
4) silicon chip after the diffusion of phosphorus source is carried out to wet etching, then, at its front surface PECVD deposition SiNx film, obtain post-depositional silicon chip;
5) in post-depositional silicon chip back side difference printed silver slurry, aluminium paste post-drying, then sintering after the positive silver of its front surface printing, obtains battery finished product.
2. according to the manufacture method of the battery of claim 1 diamond wire cutting polysilicon chip, it is characterized in that: in step 1), the thickness of described removal damage layer is 2.5 ~ 4 μ m.
3. according to the manufacture method of the battery of claim 1 diamond wire cutting polysilicon chip, it is characterized in that: step 2) in, the reflectivity of the silicon chip after the making herbs into wool of RIE dry method is 5 ~ 15%.
4. according to the manufacture method of the battery of claim 1 diamond wire cutting polysilicon chip, it is characterized in that: in step 4), described SiNx antireflective coating THICKNESS CONTROL is at 70 ~ 90nm, and reflectivity is controlled at 0.5% ~ 3%, and refractive index is controlled at 1.9 ~ 2.3.
5. according to the manufacture method of the battery of the diamond wire cutting polysilicon chip described in any one in claim 1 ~ 4, it is characterized in that: the resistivity of described P type polysilicon chip is 1 ~ 3 Ω cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410197889.7A CN104009116A (en) | 2014-05-12 | 2014-05-12 | Manufacturing method of diamond line cutting polycrystalline silicon wafer battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410197889.7A CN104009116A (en) | 2014-05-12 | 2014-05-12 | Manufacturing method of diamond line cutting polycrystalline silicon wafer battery |
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| CN201410197889.7A Pending CN104009116A (en) | 2014-05-12 | 2014-05-12 | Manufacturing method of diamond line cutting polycrystalline silicon wafer battery |
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| CN104480532A (en) * | 2014-12-30 | 2015-04-01 | 江西赛维Ldk太阳能高科技有限公司 | Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof |
| CN105679882A (en) * | 2016-03-29 | 2016-06-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Method of etching polycrystalline silicon sheet cut by diamond wire |
| CN106784169A (en) * | 2017-03-30 | 2017-05-31 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN108615788A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A kind of base-modified method of black silicon |
| TWI641461B (en) * | 2016-09-13 | 2018-11-21 | 友達晶材股份有限公司 | Ultrasonic auxiliary wire cutting cutting method and device thereof, and wafer manufacturing method |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN111599892A (en) * | 2020-05-19 | 2020-08-28 | 江苏东鋆光伏科技有限公司 | Processing technology for preparing battery piece by cutting silicon chip through diamond wire |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480532A (en) * | 2014-12-30 | 2015-04-01 | 江西赛维Ldk太阳能高科技有限公司 | Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof |
| CN104480532B (en) * | 2014-12-30 | 2017-03-15 | 江西赛维Ldk太阳能高科技有限公司 | A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip and making herbs into wool pretreatment silicon chip and its application |
| CN105679882A (en) * | 2016-03-29 | 2016-06-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Method of etching polycrystalline silicon sheet cut by diamond wire |
| TWI641461B (en) * | 2016-09-13 | 2018-11-21 | 友達晶材股份有限公司 | Ultrasonic auxiliary wire cutting cutting method and device thereof, and wafer manufacturing method |
| CN106784169A (en) * | 2017-03-30 | 2017-05-31 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN106784169B (en) * | 2017-03-30 | 2019-03-19 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN108615788A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A kind of base-modified method of black silicon |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN111599892A (en) * | 2020-05-19 | 2020-08-28 | 江苏东鋆光伏科技有限公司 | Processing technology for preparing battery piece by cutting silicon chip through diamond wire |
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