CN208422924U - A kind of passivation contact N-type solar battery, component and system - Google Patents
A kind of passivation contact N-type solar battery, component and system Download PDFInfo
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- CN208422924U CN208422924U CN201721785326.5U CN201721785326U CN208422924U CN 208422924 U CN208422924 U CN 208422924U CN 201721785326 U CN201721785326 U CN 201721785326U CN 208422924 U CN208422924 U CN 208422924U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The utility model relates to a kind of passivation contact N-type solar battery, component and systems.The passivation of the utility model contacts N-type solar battery, including N-type crystalline silicon matrix, its front surface successively includes p+ doped region, front surface passivated reflection reducing membrane and front surface main grid and secondary grid from inside to outside, its back surface successively includes tunneling oxide layer, n+ doped polysilicon layer, back surface passivation film and back surface electrode, rear electrode and n+ doped polysilicon layer Ohmic contact from inside to outside；Positive pair grid are aluminium, with p+ doped region Ohmic contact.The beneficial effect is that: front pair grid are aluminium, and aluminium can directly burn SiNxAnd it is low with silicon recombination rate, without fluting, save silver paste, open-circuit voltage height；Back surface field using n+ doped polysilicon layer as N-type solar battery provides excellent field passivation effect for silicon substrate surface, and minority carrier recombination rate is low, and battery open circuit voltage, short circuit current and energy conversion efficiency are high.
Description
Technical field
The utility model relates to technical field of solar batteries, and in particular to a kind of passivation contact N-type solar battery, group
Part and system.
Background technique
With the continuous development of photovoltaic technology, efficient, high stability, low cost photovoltaic cell will become photovoltaic market
The main product of pursuit.Many factors will affect the photoelectric conversion efficiency of photovoltaic cell, wherein the passivation quality on silicon substrate surface
It is an extremely crucial factor.It is passivated high-quality, the recombination-rate surface of silicon substrate is low, can obtain higher open-circuit voltage
And short circuit current.In the industry common N-type solar cell have high conversion efficiency, photo attenuation is low, stability is good, cost performance is high,
Also have many advantages, such as generating electricity on two sides simultaneously, be suitble to architecture-integral and right angle setting, by more and more on photovoltaic market
Pay attention to.
The most common N-type solar battery structure is that front is p+ doped layer, and matrix is N-type silicon, and the back side is n+ doping
Layer generally uses SiN thereonxOr SiO2/SiNxAs passivation layer, passivation layer then is penetrated using burn-through type silver paste and is formed with silicon
Ohmic contact.Many factors will affect photoelectric conversion efficiency, and wherein the passivation quality on silicon substrate surface is one more crucial
Factor.In order to collect the electric current of battery generation, it is necessary to make metal electrode on silicon substrate, these metal electrodes are needed across blunt
Change film and silicon substrate forms Ohmic contact, and this way inevitably destroys the passivating film below metal electrode.It is in
Silicon substrate below metal electrode does not simply fail to be passivated, also as with metal it is direct contact there are very high compound.
It can only be alleviated to a certain extent using point contact electrode or the like but this problem can not be eradicated.Its metal
Change and generally use two-sided H-type metal grid lines structure, aluminum paste is mixed in the printing of the face p+, and silver paste is printed in the face n+.Why used in the face p+
Aluminum paste is mixed, is because of following two reasons: 1) in order to form good Ohmic contact.For p+ type doping surfaces, trivalent
Aluminium and the silicon of p+ doping have smaller contact resistance, if starched using fine silver, contact resistance can be higher.2) it is welded to meet
Connect requirement.Cell piece must be welded during being packaged into component, thus metal electrode have to meet solderability this
A requirement, stanniferous welding can securely be welded with silver-colored, but can not carry out good welding in aluminium surface.Therefore, in order to simultaneously
Meet the two requirements of Ohmic contact and welding performance, generally mixes aluminum paste in the use of the face p+.However it mixes the silver in aluminum paste and contains
Amount is higher, and cost and fine silver slurry are equally matched.
There is presently no a kind of method for metallising of effective p+ type doping surfaces, meeting low ohm contact resistance and excellent
While different solderability, and the use containing silver paste can be greatly reduced.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of passivation contact N-type solar battery.
A kind of passivation provided by the utility model contacts N-type solar battery, technical solution are as follows:
A kind of passivation contact N-type solar battery, including N-type crystalline silicon matrix, the front surface of the N-type crystalline silicon matrix
It from inside to outside successively include p+ doped region and front surface passivated reflection reducing membrane；The back surface of the N-type crystalline silicon matrix from it is interior to
It outside successively include tunneling oxide layer, n+ doped polysilicon layer or n+ doped amorphous silicon layer and back surface passivation film；It is characterized by:
The back surface of the N-type crystalline silicon matrix further includes the back side with n+ doped polysilicon layer or n+ doped amorphous silicon layer Ohmic contact
Electrode, the front surface of the N-type crystalline silicon matrix further include the secondary grid in front being arranged on front surface passivated reflection reducing membrane and front
Main grid, the secondary grid in front are printed using aluminium paste, and the secondary grid in front and the p+ doped region form Ohmic contact；It is described
The length of front main grid and wide ratio are not more than 600.
Wherein, the rear electrode is the H-type grid line being made of back side main grid and back side pair grid；The line width of back side main grid is
0.5-3mm, spaced set 3-6 root, the line width of back side pair grid are 20-60 μm.
Wherein, front main grid is using silver or aerdentalloy printing, line width 0.5-3mm, spaced set 3-6 root；Just
The shape of face pair grid is continuous line-like structures, and line width is 20-60 μm.
Wherein, the material of back side tunneling oxide layer is SiO2Layer, thickness is 0.5-5nm.
Wherein, front surface passivated reflection reducing membrane is SiNxDeielectric-coating, with a thickness of 70-110nm, back surface passivation film is SiO2
And SiNxThe composite dielectric film of deielectric-coating composition, with a thickness of 20nm is not less than.
Wherein, N-type crystalline silicon matrix with a thickness of 50-300 μm.
The utility model additionally provides a kind of passivation contact N-type solar cell module, including from top to bottom sets gradually
Preceding layer material, encapsulating material, passivation contact N-type solar battery, encapsulating material, backsheet；The passivation contact N-type is too
Positive energy battery is above-mentioned passivation contact N-type solar battery.
The utility model additionally provides a kind of passivation contact N-type solar cell system, including one or more concatenated
Passivation contact N-type solar cell module；The passivation contact N-type solar cell module is that above-mentioned passivation contacts N-type too
Positive energy battery component.
The implementation of the utility model includes following technical effect:
The secondary grid in front of the passivation contact N-type solar battery of the utility model are aluminium, and aluminium can directly burn SiNx, and
Aluminium is low with silicon recombination rate, without fluting, saves silver paste, open-circuit voltage height；Using n+ doped polysilicon layer as N-type solar-electricity
The back surface field in pond provides excellent field passivation effect for silicon substrate surface, and minority carrier recombination rate is low, battery open circuit voltage,
Short circuit current and energy conversion efficiency are high；Also, the silver paste consumption of the front gate line of the utility model is 20-50 milligrams, according to
The market price of metal paste is at present come if calculating, front gate line cost of the utility model per a piece of cell piece is compared to existing
Technology wants low general 0.3-0.5 member, and by taking the production line for producing 50MW per year as an example, annual the utility model can reduce N-type solar-electricity
Ten thousand yuan of pond front gate line cost 300-500.
Detailed description of the invention
After Fig. 1 contacts the preparation method step (1) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
After Fig. 2 contacts the preparation method step (3) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
After Fig. 3 contacts the preparation method step (4) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
After Fig. 4 contacts the preparation method step (6) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
After Fig. 5 contacts the preparation method step (7) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
After Fig. 6 contacts the preparation method step (9) of N-type solar battery for a kind of passivation of the utility model embodiment
Battery structure schematic cross-section.
Fig. 7 is that a kind of passivation of the utility model embodiment contacts the secondary grid in front in the preparation method of N-type solar battery
Continuous line-like structures schematic diagram.
Specific embodiment
The utility model is described in detail below in conjunction with embodiment and attached drawing, it should be pointed out that described
Embodiment be intended merely to facilitate the understanding to the utility model, and do not play any restriction effect to it.
Referring to shown in Fig. 1 to Fig. 7, the preparation method of one of the present embodiment N-type solar battery includes the following steps:
(1), the N-type crystalline silicon matrix 10 of 156mm*156mm is selected, and to the front surface system of N-type crystalline silicon matrix 10
Suede processing；The resistivity of N-type crystalline silicon matrix 10 is 0.5~15 Ω cm, preferably 1~5 Ω cm；N-type crystalline silicon matrix 10
With a thickness of 50~300 μm, preferably 80~200 μm；Battery structure after completing this step is as shown in Figure 1.
(2), by step (1), treated that N-type crystalline silicon matrix 10 is put into industrial diffusion furnace carries out boron to making herbs into wool face
Positive p+ doped region 12 is diffuseed to form, the doping depth of p+ doped region 12 is 0.5-2.0 μm；Boron source uses tribromide
Boron, diffusion temperature are 900-1000 DEG C, and the time is 60-180 minutes.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably
50-70Ω/sqr。
(3), the N-type crystalline silicon matrix 10 after spreading boron is put into etching cleaning machine, remove the back side diffused layer of boron and
Positive Pyrex layer.Battery structure after completing this step is as shown in Figure 2.
(4), one layer of tunnel oxide 15 is grown in step (3) treated 10 back surface of N-type crystalline silicon matrix, when work
Photo-generated carrier can penetrate the formation of tunnel oxide 15 and conduct, and tunnel oxide 15 is SiO in the present embodiment2Layer is thick
Degree is 0.5-5nm.Growth tunnel oxide 15 method have nitric acid oxidation method, high-temperature thermal oxidation method, dry type Ozonation and
Wet type Ozonation.The present embodiment uses wet type Ozonation, N-type crystalline silicon matrix 10 is put into deionized water, so
It is passed through ozone in deionized water afterwards, so that ozone concentration reaches 20-50ppm, 30-50 DEG C of reaction temperature, time 5-
20min, the tunnel oxide 15 of growth with a thickness of 0.5-5nm.Battery structure after completing this step is as shown in Figure 3.
(5), in step (4), treated that N-type crystalline silicon matrix 10 is put into LPCVD equipment (low-pressure chemical vapor deposition)
In, grow intrinsically polysilicon layer or intrinsic amorphous silicon layer in its back surface, polysilicon layer or amorphous silicon layer with a thickness of being greater than
100nm.Then ion implantation device is used, phosphonium ion is injected in the polysilicon layer or amorphous silicon layer.
(6), in step (5), treated that N-type crystalline silicon matrix 10 is put into annealing furnace carries out high annealing.Annealing temperature
It is 800-950 DEG C.The polysilicon layer or amorphous silicon layer for being filled with phosphonium ion form n+ doped polysilicon layer after annealing or n+ mixes
Miscellaneous amorphous silicon layer 16.Battery structure after completing this step is as shown in Figure 4.
(7), in the front surface growth of passivation antireflective film 14 of step (6) treated N-type crystalline silicon matrix 10, in N-type crystalline substance
The back surface growth of passivation film 18 of body silicon substrate 10.Passivated reflection reducing membrane 14 is SiNxOr deielectric-coating, with a thickness of 70~110nm.
The passivating film 18 of back surface is SiO2And SiNxThe composite dielectric film of deielectric-coating composition, with a thickness of 20nm is not less than.Complete this step
Battery structure after rapid is as shown in Figure 5.
(8), the secondary grid 19 in front are printed using aluminium paste in the front surface of N-type crystalline silicon matrix 10, using silver or mixes aluminum paste
Printing front main grid 20 is simultaneously dried.It silver paste and mixes aluminum paste and is all made of common model in existing N-type cell technique, front
The line width of main grid 20 is 0.5-3mm, 20 spaced set 3-6 root of front main grid.The shape of positive pair grid 19 is continuous lines
Shape structure (as shown in Figure 7), setting orthogonal with front main grid 20.The width of positive pair grid 19 is 20-60um, length 154mm.
These continuous lines are parallel to each other, spacing 1.95mm, and 80 are arranged altogether.
(9), it using silver paste printed back electrode and is dried in the back surface of N-type crystalline silicon matrix 10, electrode figure
The shape of case is H-type grid line, and wherein main grid 22 line width in the back side is 0.5-3mm, long 154mm, spaced set 3-6 root, back side pair
Grid line width is 20-60um, long 154mm, and parallel to each other, spacing 1.55mm is arranged 100 altogether.Battery after completing this step
Structure is as shown in Figure 6.
(10), by step (9), treated that N-type crystalline silicon matrix 10 transmits is sintered into belt sintering furnace, is sintered peak
Being worth temperature is 850-950 DEG C, that is, completes the preparation of passivation contact N-type solar battery.
Using existing N-type preparation method of solar battery, the silver paste consumption of front gate line is about 100-150 milligrams,
And the preparation method of embodiment is used, the silver paste consumption of front gate line is 20-50 milligrams.According to the market of current metal paste
Price is come if calculating, the front gate line cost in embodiment per a piece of cell piece wants low general 0.3-0.5 compared with prior art
Member, by taking the production line for producing 50MW per year as an example, annual the utility model can reduce N-type solar battery front side grid line cost 300-
5000000 yuan.
As shown in fig. 6-7, the present embodiment additionally provides a kind of passivation contact N-type solar battery, including N-type crystalline silicon base
Body 10, the front surface of 10 body of N-type crystalline silicon base successively include p+ doped region 12 and front surface passivated reflection reducing from inside to outside
Film 14；The back surface of the N-type crystalline silicon matrix 10 from inside to outside successively include tunneling oxide layer 15, n+ doped polysilicon layer or
N+ doped amorphous silicon layer 16 and back surface passivation film 18；The back surface of the N-type crystalline silicon matrix 10 further includes more with n+ doping
The rear electrode of 16 Ohmic contact of crystal silicon layer or n+ doped amorphous silicon layer, the front surface of the N-type crystalline silicon matrix 10 further include
The secondary grid 19 in the front being arranged on front surface passivated reflection reducing membrane 14 and front main grid 20, the secondary grid 19 in front are printed using aluminium paste
Brush, and the secondary grid 19 in the front form Ohmic contact with the p+ doped region 12；The length of the front main grid 20 and wide ratio
Value is not more than 600, preferably 154, it is also an option that 100,200,300,400 and 600.
The present embodiment additionally provides a kind of passivation contact N-type solar cell module, including the front layer from top to bottom connected
Material, encapsulating material, passivation contact N-type solar battery, encapsulating material, backsheet, passivation contact N-type solar battery are
A kind of above-mentioned passivation contacts N-type solar battery.The structure and work of the passivation contact N-type solar cell module of the present embodiment
Make principle using technology well known in the art, and the improvement of N-type solar cell module provided by the utility model only relates to
The passivation contact N-type solar battery stated, is not modified other parts.Therefore this specification only contacts the N-type sun to passivation
Can battery and preparation method thereof be described in detail, the other component and working principle to passivation contact N-type solar cell module this
In repeat no more.The passivation of the utility model can be realized in the content basis that this specification describes in those skilled in the art
Contact N-type solar cell module.
The present embodiment additionally provides a kind of passivation contact N-type solar cell system, including one or more than one series connection
Passivation contact N-type solar cell module, passivation contact N-type solar cell module is a kind of above-mentioned passivation contact N-type
Solar cell module.The structure and working principle of the passivation contact N-type solar cell system of the present embodiment uses this field
Well known technology, and the improvement of passivation contact N-type solar cell system provided by the utility model only relates to above-mentioned passivation
N-type solar battery is contacted, other parts are not modified.Therefore this specification only to passivation contact N-type solar battery and
Preparation method is described in detail, no longer superfluous here to the other component and working principle of passivation contact N-type solar cell system
It states.The passivation contact N-type of the utility model can be realized too in the content basis that this specification describes in those skilled in the art
Positive energy battery system.
Finally it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than to this reality
With the limitation of novel protected range, although being explained in detail referring to preferred embodiment to the utility model, this field it is general
Lead to it will be appreciated by the skilled person that can be with the technical solution of the present invention is modified or equivalently replaced, without departing from this
The spirit and scope of utility model technical solution.
Claims (8)
1. a kind of passivation contacts N-type solar battery, including N-type crystalline silicon matrix, the front surface of the N-type crystalline silicon matrix from
Interior arrive outer successively includes p+ doped region and front surface passivated reflection reducing membrane；The back surface of the N-type crystalline silicon matrix is from inside to outside
It successively include tunneling oxide layer, n+ doped amorphous silicon layer and back surface passivation film；It is characterized by: the N-type crystalline silicon matrix
Back surface further include rear electrode with n+ doped amorphous silicon layer Ohmic contact, the front surface of the N-type crystalline silicon matrix is also
The secondary grid in front and front main grid including being arranged on front surface passivated reflection reducing membrane, the secondary grid in front are printed using aluminium paste, and
The secondary grid in front and the p+ doped region form Ohmic contact.
2. a kind of passivation according to claim 1 contacts N-type solar battery, it is characterised in that: the rear electrode is
The H-type grid line being made of back side main grid and back side pair grid；The line width of back side main grid is 0.5-3mm, spaced set 3-6 root, back
The line width of face pair grid is 20-60 μm.
3. a kind of passivation according to claim 1 or 2 contacts N-type solar battery, it is characterised in that: front main grid uses
Silver or aerdentalloy printing, line width 0.5-3mm, spaced set 3-6 root；The shape of positive pair grid is continuous linear
Structure, line width are 20-60 μm.
4. a kind of passivation according to claim 1 or 2 contacts N-type solar battery, it is characterised in that: the oxidation of back side tunnel
The material of layer is SiO2Layer, thickness is 0.5-5nm.
5. a kind of passivation according to claim 4 contacts N-type solar battery, it is characterised in that: front surface passivated reflection reducing
Film is SiNxDeielectric-coating, with a thickness of 70-110nm, back surface passivation film is SiO2And SiNxThe complex media of deielectric-coating composition
Film, with a thickness of 20nm is not less than.
6. a kind of passivation according to claim 1 contacts N-type solar battery, it is characterised in that: N-type crystalline silicon matrix
With a thickness of 50-300 μm.
7. a kind of passivation contacts N-type solar cell module, including from top to bottom set gradually preceding layer material, encapsulating material,
Passivation contact N-type solar battery, encapsulating material, backsheet；It is characterized by: the passivation contacts N-type solar battery
It is passivation contact N-type solar battery described in any one of claims 1-6.
8. a kind of passivation contacts N-type solar cell system, including at least one concatenated passivation contacts N-type solar battery group
Part；It is characterized by: the passivation contact N-type solar cell module is passivation contact N-type solar energy as claimed in claim 7
Battery component.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721785326.5U CN208422924U (en) | 2017-12-19 | 2017-12-19 | A kind of passivation contact N-type solar battery, component and system |
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| CN201721785326.5U CN208422924U (en) | 2017-12-19 | 2017-12-19 | A kind of passivation contact N-type solar battery, component and system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
| CN115274870A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Passivation contact structure with different polarities, battery, preparation process, assembly and system |
| JP7470762B2 (en) | 2022-08-05 | 2024-04-18 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar Cells and Photovoltaic Modules |
-
2017
- 2017-12-19 CN CN201721785326.5U patent/CN208422924U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
| CN115274870A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Passivation contact structure with different polarities, battery, preparation process, assembly and system |
| CN115274870B (en) * | 2021-04-30 | 2023-11-10 | 泰州中来光电科技有限公司 | Passivation contact structure with different polarities, battery, preparation process, assembly and system |
| JP7470762B2 (en) | 2022-08-05 | 2024-04-18 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar Cells and Photovoltaic Modules |
| US11973152B2 (en) | 2022-08-05 | 2024-04-30 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
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