CN102263159A - Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification - Google Patents
Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification Download PDFInfo
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- CN102263159A CN102263159A CN201110143921XA CN201110143921A CN102263159A CN 102263159 A CN102263159 A CN 102263159A CN 201110143921X A CN201110143921X A CN 201110143921XA CN 201110143921 A CN201110143921 A CN 201110143921A CN 102263159 A CN102263159 A CN 102263159A
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Abstract
The invention discloses a process for preparing an n-type solar cell by utilizing boron-phosphorus coamplification. The process comprises the following steps of: performing surface texturing; screen-printing boron slurry or phosphorus slurry on the surface of a silicon wafer, and drying the boron slurry or the phosphorus slurry for 5 to 30min under the condition of 100 to 500 DEG C; selectively screen-sprinting a layer of slurry as a blocking layer on the boron slurry or the phosphorus slurry according to own blocking and external diffusion characteristics of the boron slurry or the phosphorus slurry at high temperature; performing high-temperature boron and phosphorus diffusion on active layers in a back-to-back way; for the n-type silicon wafer on which the boron slurry is screen-printed, performing diffusion for 10 to 60min under the condition of 880 to 1,100 DEG C, cooling the n-type silicon wafer to 800 to 950 DEG C and introducing a phosphoryl chloride (POCl3) source to perform phosphorus diffusion for 10 to 60min; for the n-type silicon wafer on which the phosphorus slurry is screen-printed, introducing a boron tribromide (BBr3) source under the temperature condition of 880 to 1,100 DEG C to perform the boron-phosphorus coamplification for 10 to 60min; performing peripheral isolation and removing boron silicate glass (BSG), phosphosilicate glass (PSG) and the blocking layer; performing double-sided passivation; and preparing electrodes.
Description
Technical field
The present invention relates to field of photovoltaic power generation, be specifically related to a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether.
Background technology
Efficiently, low cost is two general objectives that photovoltaic industry is pursued, n type battery is owing to have high minority carrier life time and low attenuation characteristic is subjected to increasing attention.At present, efficient has only the full back electrode solar cell of Sunpower company and the HIT heterojunction battery of Sanyo company above 20.0% commercialization high-efficiency battery, and peak efficiency reaches 24.2% and 23.0% respectively.The full back electrode solar cell of Sunpower company adopts processes such as multiple high temp diffusion, high-temperature oxydation, mask, chemical corrosion to form phosphorus front court, boron emitters on back side and local boron heavy doping contact window, and technology is very complicated.The HIT heterojunction battery of Sanyo company adopts harsh chemical making herbs into wool cleaning, high-quality low temperature depositing amorphous silicon membrane (intrinsic, boron doping, phosphorus doping) and conductive film and silk screen printing low-temperature pulp technology to prepare the HIT battery, technical difficulty is very high, equipment has high input, so these two kinds of production cost of cells are very high.Some other Photovoltaics Com Inc. adopts conventional production line to prepare n type battery under the prerequisite of sacrificial section photoelectric conversion efficiency, forms boron emitter and phosphorus surface field respectively as adopting secondary High temperature diffusion mode, and battery efficiency reaches about 19.0%.But this preparation technology is still more loaded down with trivial details, and Effect Factors for Sythetic Technology is more, and with respect to the conversion efficiency of present p type solar cell 18.0 ~ 18.5%, not how many profit advantages.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether is provided, thereby effectively reduces n type cell preparation cost and improve battery efficiency.
The technical solution used in the present invention is:
A kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether may further comprise the steps:
1, surface wool manufacturing;
2, silicon chip surface silk screen printing boron slurry or phosphorus slurry, and under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3, whether again can select thereon silk screen printing one deck barrier slurry according to boron slurry or phosphorus slurry self stopping at high temperature with the outdiffusion characteristic;
4, active layer carries out high temperature boron, phosphorous diffusion back-to-back; For the n type silicon chip of printing boron slurry, under 880 ~ 1100 ℃ of conditions, spread 10 ~ 60min earlier, be cooled to 800 ~ 950 ℃ subsequently, feed POCl again
3Phosphorous diffusion 10 ~ 60min is carried out in the source; N type silicon chip for printing phosphorus slurry feeds BBr at 880 ~ 1100 ℃ of temperature conditions
3The source is carried out boron phosphorus and is spread 10 ~ 60min altogether;
5, the removal on edge isolation and BSG, PSG and barrier layer;
6, passivation on double surfaces;
7, preparation electrode.
As preferably, the passivation on double surfaces mode is in the above-mentioned steps 6: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive Al of employing
2O
3The SiN film is adopted at/SiN stack membrane the back side.
Beneficial effect: the mode that the present invention is based on silk screen printing, the process program that adopts boron, phosphorus to expand altogether can greatly be simplified the preparation technology of n type battery and reduce manufacturing cost, and under spread condition, reduce the influence of pyroprocess, improve the performance of n type battery the minority carrier life time of silicon chip.
Description of drawings
Fig. 1 is the process route chart of the embodiment of the invention 1;
Fig. 2 is the process route chart of the embodiment of the invention 2;
Fig. 3 is the process route chart of the embodiment of the invention 3;
Fig. 4 is the process route chart of the embodiment of the invention 4.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments:
Embodiment 1
As shown in Figure 1: a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether may further comprise the steps:
1. adopting the body minority carrier life time is the n type silicon chip of 0.5 ~ 15.0 Ω cm greater than 50 μ s, resistivity, and silicon chip surface affected layer and making herbs into wool are removed in chemical corrosion;
2. at the positive printing of silicon chip boron slurry, under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3. active layer inserts quartz boat face-to-face and carries out High temperature diffusion; Earlier under 880 ~ 1100 ℃ of conditions, spread 10 ~ 60min, be cooled to 800 ~ 950 ℃ subsequently, feed POCl again
3Phosphorous diffusion 10 ~ 60min is carried out in the source;
4. plasma carries out edge isolation;
5. chemical corrosion is cleaned and is removed printing slurry, phosphorosilicate glass and Pyrex, oven dry;
6. carry out passivation on double surfaces, the passivation mode is: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive Al of employing
2O
3The SiN film is adopted at/SiN stack membrane the back side.
7. before the silk screen printing, back electrode; Positive printing Ag/Al slurry, back up Ag slurry; In order further to reduce resistance, to improve battery efficiency, can consider that carrying out secondary in the front prints the Ag slurry;
8. Fast Sintering; Can adopt once sintered or double sintering according to distinct device and printing performance.
Embodiment 2
As shown in Figure 2: a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether may further comprise the steps:
1. adopting the body minority carrier life time is the n type silicon chip of 0.5 ~ 15.0 Ω cm greater than 50 μ s, resistivity, and silicon chip surface affected layer and making herbs into wool are removed in chemical corrosion;
2. at the positive printing of silicon chip boron slurry, under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3. the front republishes one deck barrier layer to cover the boron source, dries 5 ~ 30min under 100 ~ 500 ℃ of conditions;
4. active layer inserts quartz boat face-to-face and carries out High temperature diffusion; Earlier under 880 ~ 1100 ℃ of conditions, spread 10 ~ 60min, be cooled to 800 ~ 950 ℃ subsequently, feed POCl again
3Phosphorous diffusion 10 ~ 60min is carried out in the source;
5. plasma carries out edge isolation;
6. chemical corrosion is cleaned and is removed printing slurry, phosphorosilicate glass and Pyrex, oven dry;
7. carry out passivation on double surfaces, the passivation mode is: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive SiN/Al of employing
2O
3The SiN film is adopted at the stack membrane back side.
8. before the silk screen printing, back electrode; Positive printing Ag/Al slurry, back up Ag slurry; In order further to reduce resistance, to improve battery efficiency, can consider that carrying out secondary in the front prints the Ag slurry.
9. Fast Sintering; Can adopt once sintered or double sintering according to distinct device and printing performance.
Embodiment 3
As shown in Figure 3: a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether may further comprise the steps:
1. adopting the body minority carrier life time is the n type silicon chip of 0.5 ~ 15.0 Ω cm greater than 50 μ s, resistivity, and silicon chip surface affected layer and making herbs into wool are removed in chemical corrosion;
2. at silicon chip back up phosphorus slurry, under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3. active layer inserts quartz boat back-to-back and carries out High temperature diffusion, feeds BBr at 880 ~ 1100 ℃ of temperature conditions
3Boron diffusion 10 ~ 60min is carried out in the source;
4. plasma carries out edge isolation;
5. chemical corrosion is cleaned and is removed printing slurry, phosphorosilicate glass and Pyrex, oven dry;
6. carry out passivation on double surfaces, the passivation mode is: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive Al of employing
2O
3The SiN film is adopted at/SiN stack membrane the back side.
7. before the silk screen printing, back electrode; Positive printing Ag/Al slurry, back up Ag slurry; In order further to reduce resistance, to improve battery efficiency, can consider that carrying out secondary in the front prints the Ag slurry.
8. Fast Sintering; Can adopt once sintered or double sintering according to distinct device and printing performance.
Embodiment 4
As shown in Figure 4: a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether may further comprise the steps:
1. adopting the body minority carrier life time is the n type silicon chip of 0.5 ~ 15.0 Ω cm greater than 50 μ s, resistivity, and silicon chip surface affected layer and making herbs into wool are removed in chemical corrosion;
2. at silicon chip back up phosphorus slurry, under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3. the back side republishes one deck barrier layer to cover the phosphorus source, dries 5 ~ 30min under 100 ~ 500 ℃ of conditions;
4. active layer inserts quartz boat back-to-back and carries out High temperature diffusion, feeds BBr at 880 ~ 1100 ℃ of temperature conditions
3Boron diffusion 10 ~ 60min is carried out in the source;
5. plasma carries out edge isolation;
6. chemical corrosion is cleaned and is removed printing slurry, phosphorosilicate glass and Pyrex, oven dry;
7. carry out passivation on double surfaces, the passivation mode is: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive Al of employing
2O
3The SiN film is adopted at/SiN stack membrane the back side.
8. before the silk screen printing, back electrode; Positive printing Ag/Al slurry, back up Ag slurry; In order further to reduce resistance, to improve battery efficiency, can consider that carrying out secondary in the front prints the Ag slurry.
9. Fast Sintering; Can adopt once sintered or double sintering according to distinct device and printing performance.
Claims (2)
1. one kind is utilized boron phosphorus to spread the technology for preparing n type solar cell altogether, it is characterized in that: may further comprise the steps:
1) surface wool manufacturing;
2) silicon chip surface silk screen printing boron slurry or phosphorus slurry, and under 100 ~ 500 ℃ of conditions, dry 5 ~ 30min;
3) whether again can select thereon silk screen printing one deck barrier slurry according to boron slurry or phosphorus slurry self stopping at high temperature with the outdiffusion characteristic;
4) active layer carries out high temperature boron, phosphorous diffusion back-to-back; For the n type silicon chip of printing boron slurry, under 880 ~ 1100 ℃ of conditions, spread 10 ~ 60min earlier, be cooled to 800 ~ 950 ℃ subsequently, feed POCl again
3Phosphorous diffusion 10 ~ 60min is carried out in the source; N type silicon chip for printing phosphorus slurry feeds BBr at 880 ~ 1100 ℃ of temperature conditions
3The source is carried out boron phosphorus and is spread 10 ~ 60min altogether;
5) removal on edge isolation and BSG, PSG and barrier layer;
6) passivation on double surfaces;
7) preparation electrode.
2. a kind of technology of utilizing boron phosphorus to spread preparation n type solar cell altogether according to claim 1, it is characterized in that: the passivation on double surfaces mode is in the above-mentioned steps 6: hot oxygen passivation adds that double-sided deposition SiN film, wet-chemical passivation add double-sided deposition SiN film or the positive Al of employing
2O
3The SiN film is adopted at/SiN stack membrane the back side.
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437241A (en) * | 2011-12-02 | 2012-05-02 | 百力达太阳能股份有限公司 | Preparation method of solar cell with elimination of printing wave line |
| CN102683486A (en) * | 2012-04-27 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Double-surface diffusion method of N-type crystalline silicon solar cell |
| CN102709389A (en) * | 2012-05-27 | 2012-10-03 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing double-faced back contact solar cell |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
| CN103227244A (en) * | 2013-05-07 | 2013-07-31 | 英利集团有限公司 | N-type solar cell and preparation method of selective back surface fields of N-type solar cell |
| US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| CN103811588A (en) * | 2014-01-26 | 2014-05-21 | 晶澳太阳能有限公司 | Double-faced diffusion technology of solar battery |
| CN104157740A (en) * | 2014-09-03 | 2014-11-19 | 苏州阿特斯阳光电力科技有限公司 | N-type two-side solar cell manufacturing method |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| CN105609594A (en) * | 2016-03-22 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Preparation method of N-type double-sided solar cell |
| EP3188258A1 (en) * | 2015-12-28 | 2017-07-05 | Inventec Solar Energy Corporation | Method of forming a bifacial solar cell structure |
| CN107425093A (en) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | The doping method of double-side cell |
| CN107706268A (en) * | 2017-09-20 | 2018-02-16 | 东方环晟光伏（江苏）有限公司 | Using the preparation method of the PERT crystal-silicon solar cells of new doping way |
| CN107910398A (en) * | 2017-10-12 | 2018-04-13 | 东方环晟光伏（江苏）有限公司 | The production method of p-type PERC double-side solar cells |
| CN109301031A (en) * | 2018-09-12 | 2019-02-01 | 江苏林洋光伏科技有限公司 | The production method of N-type double-side cell |
| CN109301029A (en) * | 2018-08-01 | 2019-02-01 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type double-sided solar battery |
| CN109659224A (en) * | 2018-12-14 | 2019-04-19 | 济南卓微电子有限公司 | Monocrystalline silicon piece boron phosphorus is the same as the technique expanded |
| CN115224152A (en) * | 2021-03-31 | 2022-10-21 | 浙江爱旭太阳能科技有限公司 | Manufacturing method and solar cell |
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Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| CN102437241A (en) * | 2011-12-02 | 2012-05-02 | 百力达太阳能股份有限公司 | Preparation method of solar cell with elimination of printing wave line |
| CN102683486A (en) * | 2012-04-27 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Double-surface diffusion method of N-type crystalline silicon solar cell |
| CN102709389A (en) * | 2012-05-27 | 2012-10-03 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing double-faced back contact solar cell |
| CN102709389B (en) * | 2012-05-27 | 2015-04-22 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing double-faced back contact solar cell |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
| CN103227244A (en) * | 2013-05-07 | 2013-07-31 | 英利集团有限公司 | N-type solar cell and preparation method of selective back surface fields of N-type solar cell |
| CN103227244B (en) * | 2013-05-07 | 2016-12-28 | 英利集团有限公司 | N-type solaode and selectivity back surface field preparation method thereof |
| CN103811588A (en) * | 2014-01-26 | 2014-05-21 | 晶澳太阳能有限公司 | Double-faced diffusion technology of solar battery |
| CN103811588B (en) * | 2014-01-26 | 2016-07-13 | 晶澳太阳能有限公司 | A kind of Double side diffusion technique of solaode |
| CN104157740A (en) * | 2014-09-03 | 2014-11-19 | 苏州阿特斯阳光电力科技有限公司 | N-type two-side solar cell manufacturing method |
| CN104157740B (en) * | 2014-09-03 | 2017-02-08 | 苏州阿特斯阳光电力科技有限公司 | N-type two-side solar cell manufacturing method |
| EP3188258A1 (en) * | 2015-12-28 | 2017-07-05 | Inventec Solar Energy Corporation | Method of forming a bifacial solar cell structure |
| CN105609594A (en) * | 2016-03-22 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Preparation method of N-type double-sided solar cell |
| CN105609594B (en) * | 2016-03-22 | 2017-08-15 | 中利腾晖光伏科技有限公司 | The preparation method of N-type double-sided solar battery |
| CN107425093A (en) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | The doping method of double-side cell |
| CN107706268A (en) * | 2017-09-20 | 2018-02-16 | 东方环晟光伏（江苏）有限公司 | Using the preparation method of the PERT crystal-silicon solar cells of new doping way |
| CN107910398A (en) * | 2017-10-12 | 2018-04-13 | 东方环晟光伏（江苏）有限公司 | The production method of p-type PERC double-side solar cells |
| CN109301029A (en) * | 2018-08-01 | 2019-02-01 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type double-sided solar battery |
| CN109301031A (en) * | 2018-09-12 | 2019-02-01 | 江苏林洋光伏科技有限公司 | The production method of N-type double-side cell |
| CN109659224A (en) * | 2018-12-14 | 2019-04-19 | 济南卓微电子有限公司 | Monocrystalline silicon piece boron phosphorus is the same as the technique expanded |
| CN109659224B (en) * | 2018-12-14 | 2023-03-31 | 济南卓微电子有限公司 | Boron-phosphorus co-expansion process for monocrystalline silicon wafer |
| CN115224152A (en) * | 2021-03-31 | 2022-10-21 | 浙江爱旭太阳能科技有限公司 | Manufacturing method and solar cell |
| CN115224152B (en) * | 2021-03-31 | 2024-04-16 | 浙江爱旭太阳能科技有限公司 | Solar cell and manufacturing method thereof |
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Application publication date: 20111130 |