CN115224152B - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN115224152B CN115224152B CN202110347741.7A CN202110347741A CN115224152B CN 115224152 B CN115224152 B CN 115224152B CN 202110347741 A CN202110347741 A CN 202110347741A CN 115224152 B CN115224152 B CN 115224152B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 134
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052796 boron Inorganic materials 0.000 claims abstract description 98
- 238000007639 printing Methods 0.000 claims abstract description 35
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 238000004513 sizing Methods 0.000 claims abstract description 7
- 239000002002 slurry Substances 0.000 claims description 97
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 75
- 229910052698 phosphorus Inorganic materials 0.000 claims description 70
- 239000011574 phosphorus Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 19
- 239000003814 drug Substances 0.000 claims description 16
- 239000005388 borosilicate glass Substances 0.000 claims description 13
- 239000005360 phosphosilicate glass Substances 0.000 claims description 13
- 229910017107 AlOx Inorganic materials 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical group ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100021765 E3 ubiquitin-protein ligase RNF139 Human genes 0.000 description 1
- 101001106970 Homo sapiens E3 ubiquitin-protein ligase RNF139 Proteins 0.000 description 1
- 101100247596 Larrea tridentata RCA2 gene Proteins 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention is suitable for the technical field of solar cells, and provides a manufacturing method and a solar cell. The manufacturing method of the interdigital back structure comprises the following steps: patterning the printing paste on the surface of the substrate to form a plurality of paste regions, the paste comprising one of a boron paste and a phosphorous paste, the paste regions intersecting the non-paste regions; processing the substrate after printing the sizing agent to enable boron atoms and phosphorus atoms to be respectively diffused into the substrate to form a P-type region and an N-type region; and cleaning the surface of the substrate where the P-type region and the N-type region are formed. Therefore, the operation flow is simple, the precision requirement is not required, and the manufacturing efficiency of the interdigital back structure is improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a manufacturing method of an interdigital back structure, a manufacturing method of a solar cell and the solar cell.
Background
In the manufacturing process of the interdigital back structure in the related art, the structures of the P-type region and the N-type region are manufactured step by step, when the structure of the P-type region is manufactured, the N-type region is required to be shielded by a mask, the operation flow is complex, the structures of the P-type region and the N-type region are narrower in width, and the printing precision requirement is high. This results in a less efficient fabrication of the back side structure of the interdigital structure. Based on this, how to improve the manufacturing efficiency of the interdigital backside structure is a problem to be solved.
Disclosure of Invention
The invention provides a manufacturing method of an interdigital back structure, a manufacturing method of a solar cell and the solar cell, and aims to solve the problem of how to improve the manufacturing efficiency of the interdigital back structure.
In a first aspect, the present invention provides a method for manufacturing an interdigital backside structure, including the steps of:
patterning a printing paste on a surface of a substrate to form a plurality of paste regions, the paste comprising one of a boron paste and a phosphorous paste, the paste regions intersecting non-paste regions;
processing the substrate after printing the sizing agent to enable boron atoms and phosphorus atoms to be respectively diffused into the substrate to form a P-type region and an N-type region;
and cleaning the surface of the substrate where the P-type region and the N-type region are formed.
Optionally, processing the substrate with the printed paste to diffuse boron atoms and phosphorus atoms into the substrate to form P-type and N-type regions, respectively, comprising:
when the slurry is boron slurry, the diffusion source is POCl 3 Performing phosphorus diffusion on the substrate printed with the boron paste; when the slurry is phosphorus slurry, the diffusion source is BBr 3 、BCl 3 And performing boron diffusion on the substrate printed with the phosphorus slurry.
Optionally, phosphorus diffusion is performed on the substrate printed with the boron paste, including:
placing the substrate with the printed slurry into a diffusion furnace, and introducing N 2 And O 2 Controlling the diffusion temperature within 750-1000 ℃ to diffuse boron atoms into the substrate to form a P-type region, and growing a layer of borosilicate glass on the substrate printed with boron paste;
introducing N 2 ，O 2 And a phosphorus source having a diffusion temperature between 750-900 ℃ to form an N-type region in the area of the back surface of the substrate where the boron paste is not printed.
Optionally, boron diffusion is performed on the substrate printed with the phosphor paste, including:
placing the substrate with the printed slurry into a diffusion furnace, and introducing N 2 And O 2 Controlling the diffusion temperature within 750-1000 ℃ to diffuse phosphorus atoms into the substrate to form an N-type region, and growing a layer of phosphosilicate glass on the substrate printed with the phosphorus slurry;
introducing N 2 ，O 2 And a boron source, wherein the diffusion temperature is between 750 and 900 ℃, and the pressure is controlled to be 1Kpa to 30Kpa, so that a P-type region is formed in the area without printing the phosphorus slurry on the back surface of the substrate.
Optionally, processing the substrate with the printed paste to diffuse boron atoms and phosphorus atoms into the substrate to form P-type and N-type regions, respectively, comprising:
printing the other of the boron paste and the phosphorous paste on the non-paste region to form a plurality of boron paste regions and a plurality of phosphorous paste regions, the boron paste regions and the phosphorous paste regions intersecting;
and emitting laser to the boron slurry area and the phosphorus slurry area so as to diffuse boron atoms and phosphorus atoms into the substrate respectively to form a P-type area and an N-type area.
Optionally, in the step of emitting laser light to the boron paste region and the phosphorus paste region, the laser light is controlled to be blue light, green light or violet light, and the pulse width is nanosecond, picosecond or femtosecond.
Optionally, the step of emitting laser light to the boron slurry region and the phosphorus slurry region specifically includes:
emitting laser light having the same parameters to the boron slurry region and the phosphorous slurry region; and/or the number of the groups of groups,
and emitting laser with corresponding parameters to the boron paste region and the phosphorus paste region according to the patterns of the boron paste region and/or the phosphorus paste region.
Optionally, in the step of emitting the laser light with the same parameters to the boron paste region and the phosphorus paste region, the laser light is controlled to be blue light or green light, and the pulse width is nanosecond or picosecond;
and in the step of emitting laser with corresponding parameters to the boron paste region and the phosphorus paste region according to the patterns of the boron paste region and/or the phosphorus paste region, controlling the laser to be green light or purple light, and controlling the pulse width to be picosecond or femtosecond.
Optionally, a gap is provided between the boron slurry region and the phosphorous slurry region.
Optionally, the manufacturing method further comprises the following steps:
the boron slurry region and the phosphorus slurry region on the substrate are baked.
Optionally, the step of cleaning the surface of the substrate where the P-type region and the N-type region are formed specifically includes:
and respectively placing the substrates forming the P-type region and the N-type region into alkaline liquid medicine, hydrofluoric acid liquid medicine and hydrochloric acid liquid medicine for cleaning.
In a second aspect, the present invention provides a method for manufacturing a solar cell, including the steps of:
making a suede on the front surface of the substrate;
the manufacturing method of the interdigital back structure of any one of the above steps, so as to manufacture the interdigital back structure;
respectively depositing passivation antireflection films on the front side and the back side of the substrate;
and manufacturing an electrode on the back surface of the substrate.
Optionally, after the steps of depositing passivation anti-reflection films on the front surface and the back surface of the substrate, respectively, the method further comprises:
and patterning and grooving is carried out on the passivation anti-reflection film on the back surface of the substrate.
Optionally, before the steps of depositing passivation anti-reflection films on the front surface and the back surface of the substrate, the method further comprises:
and diffusing on the front surface of the substrate to form a doped layer.
Optionally, the passivation anti-reflection film includes at least one of a SiNx film, an AlOx film, a SiOx film, a SiOxNy film, and an amorphous silicon film.
In a third aspect, the present invention provides a solar cell fabricated by the method of fabricating a solar cell of any one of the above.
According to the manufacturing method of the interdigital back structure, the manufacturing method of the solar cell and the solar cell, the P-type region and the N-type region are manufactured by printing the sizing agent and processing the substrate with the sizing agent printed, multiple times of mask printing and film removing cleaning are not needed, the operation flow is simple, and the accuracy requirement is avoided. Thus, the manufacturing efficiency of the interdigital back structure is improved.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of a slurry area and a non-slurry area in a method of fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 4 is a schematic view of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 8 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
FIG. 9 is a schematic flow chart of a method for fabricating an interdigital backside structure according to an embodiment of the present invention;
fig. 10 is a schematic structural view of a solar cell according to an embodiment of the present invention;
fig. 11 is a schematic structural view of a solar cell according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the prior art, the operation flow of the back structure of the interdigital structure is complex, and the requirement on printing precision is high, so that the manufacturing efficiency of the back structure of the interdigital structure is lower. According to the manufacturing method of the interdigital back structure, the P-type region and the N-type region are manufactured by printing the slurry and processing the substrate with the slurry printed, the operation flow is simple, no precision requirement exists, and the manufacturing efficiency of the interdigital back structure is improved.
Referring to fig. 1, the method for manufacturing the interdigital back structure provided by the embodiment of the invention comprises the following steps:
step S102: patterning the printing paste on the surface of the substrate to form a plurality of paste regions, the paste comprising one of a boron paste and a phosphorous paste, the paste regions intersecting the non-paste regions;
step S104: processing the substrate after printing the sizing agent to enable boron atoms and phosphorus atoms to be respectively diffused into the substrate to form a P-type region and an N-type region;
step S16: and cleaning the surface of the substrate where the P-type region and the N-type region are formed.
According to the manufacturing method of the interdigital back structure, the P-type region and the N-type region are manufactured by printing the slurry and processing the substrate with the slurry printed, multiple times of mask printing and film removing cleaning are not needed, the operation flow is simple, and no precision requirement is required. Thus, the manufacturing efficiency of the interdigital back structure is improved.
It is understood that the non-slurry region refers to a portion of the substrate surface other than the slurry region. The plurality of slurry areas may be separated by non-slurry areas. In this way, the slurry areas cross the non-slurry areas. The multiple slurry areas may be all parallel, all non-parallel, or some parallel and the remainder non-parallel. The specific manner of intersection of the slurry zone with the non-slurry zone is not limited herein.
Specifically, referring to fig. 2, in the present embodiment, a plurality of slurry areas 202 on a substrate surface 201 may be parallel to each other, and a non-slurry area 203 is spaced between every two adjacent slurry areas 202.
In step S104, high temperature diffusion, laser diffusion, ion bombardment diffusion, or other diffusion may be performed.
Note that in step S102, only one of the boron paste and the phosphorus paste is used for patterning printing on the substrate surface, and thus, in step S104, diffusion of another atom may be performed to form the P-type region and the N-type region.
For example, step S102 may include: patterning the boron paste on the surface of the substrate to form a plurality of boron paste areas and non-paste areas, wherein the boron paste areas and the non-paste areas are intersected; step S104 may include: and (3) performing phosphorus diffusion on the substrate after printing the slurry so as to enable boron atoms and phosphorus atoms to be respectively diffused into the substrate to form a P-type region and an N-type region. Thus, the P-type region and the N-type region are formed by printing the boron paste and then performing phosphorus diffusion.
Further, step S104 includes: when the slurry is boron slurry, the diffusion source is POCl 3 And performing phosphorus diffusion on the substrate printed with the boron paste. Thus, the phosphorus diffusion is carried out on the substrate printed with the boron paste, the effect is good, and the efficiency is high.
Further, phosphorus diffusion is performed on the substrate printed with the boron paste, including: placing the substrate with the printed slurry into a diffusion furnace, and introducing N 2 And O 2 Controlling the diffusion temperature within the range of 750-1000 ℃ so as to diffuse boron atoms into the substrate to form a P-type region, and growing a layer of borosilicate glass (BSG) on the substrate printed with the boron paste; introducing N 2 ，O 2 And a phosphorus source having a diffusion temperature between 750-900 ℃ to form an N-type region in the area of the back surface of the substrate where the boron paste is not printed.
Thus, due to the blocking of BSG, phosphorus cannot diffuse into the substrate under BSG in the substrate area where the boron paste is printed, and thus, the grown BSG acts as a mask, achieving selective diffusion.
It is understood that the two steps are a temperature raising step and a phosphorus expanding step. In the temperature raising step, the temperature is, for example, 750 ℃, 752 ℃, 763 ℃, 800 ℃, 822 ℃, 880 ℃, 900 ℃, 970 ℃, 1000 ℃. In the phosphorus expansion step, the temperature is, for example, 750 ℃, 752 ℃, 763 ℃, 800 ℃, 822 ℃, 880 ℃, 900 ℃.
As another example, step S102 may include: patterning the printing of the phosphor paste on the surface of the substrate to form a plurality of phosphor paste regions and non-paste regions, the phosphor paste regions and the non-paste regions intersecting; step S104 may include: and (3) performing boron diffusion on the substrate after the printing of the sizing agent, so that boron atoms and phosphorus atoms are respectively diffused into the substrate to form a P-type region and an N-type region. Thus, the P-type region and the N-type region are formed by printing the phosphorus slurry and then performing boron diffusion.
Further, step S104 includes: when the slurry is phosphorus slurry, the diffusion source is BBr 3 Or BCl 3 And performing boron diffusion on the substrate printed with the phosphorus slurry. Thus, the boron diffusion is carried out on the substrate printed with the phosphorus slurry, the effect is good, and the efficiency is high. The temperature is, for example, 850 ℃, 852 ℃, 863 ℃, 900 ℃, 922 ℃, 980 ℃, 1000 ℃.
Further, boron diffusion is performed on the substrate printed with the phosphor paste, comprising: placing the substrate with the printed slurry into a diffusion furnace, and introducing N 2 And O 2 Controlling the diffusion temperature within the range of 750-1000 ℃ so as to diffuse phosphorus atoms into the substrate to form an N-type region, and growing a layer of phosphosilicate glass (PSG) on the substrate printed with the phosphorus slurry; introducing N 2 ，O 2 And a boron source, wherein the diffusion temperature is between 750 and 900 ℃, and the pressure is controlled to be 1Kpa to 30Kpa, so that a P-type region is formed in the area without printing the phosphorus slurry on the back surface of the substrate.
Thus, due to the blocking of the PSG, boron cannot diffuse into the substrate under the PSG in the substrate area where the phosphorus paste is printed, and thus the grown PSG acts as a mask, achieving selective diffusion.
It is understood that the two steps are a heating step and a boron expansion step. In the temperature raising step, the temperature is, for example, 750 ℃, 752 ℃, 763 ℃, 800 ℃, 822 ℃, 880 ℃, 900 ℃, 970 ℃, 1000 ℃. In the boron expansion step, the temperature is, for example, 750 ℃, 752 ℃, 763 ℃, 800 ℃, 822 ℃, 880 ℃, 900 ℃. The pressures are, for example, 1Kpa, 2Kpa, 8Kpa, 12Kpa, 17Kpa, 21Kpa, 28Kpa, 30Kpa.
Specifically, in step S16, the unnecessary residues on the substrate surface may be removed by cleaning. The excess residue includes boron slurry residue or phosphorus slurry residue. The excess residue may also include borosilicate glass and phosphosilicate glass produced by the high temperature reaction when diffusion is performed by high temperature.
Referring to fig. 3, optionally, step S104 includes:
step S12: printing the other of the boron paste and the phosphorus paste on the non-paste region to form a plurality of boron paste regions and a plurality of phosphorus paste regions, wherein the boron paste regions and the phosphorus paste regions intersect;
step S14: and emitting laser to the boron slurry area and the phosphorus slurry area to diffuse boron atoms and phosphorus atoms into the substrate respectively to form a P-type area and an N-type area.
Thus, the boron paste region and the phosphorus paste region are formed by the patterned printing paste, the operation flow is simple, and the manufacturing efficiency is improved. Moreover, when boron atoms and phosphorus atoms are diffused into the substrate in a laser scanning mode, the irradiation range and the irradiation energy can be accurately controlled through laser, so that the treatment on the boron slurry area and the phosphorus slurry area can be more accurate, and the diffusion effect can be improved.
Specifically, in step S12, "graphic printing" means that the screen design pattern is printed in accordance with the pattern. Further, techniques of printing include, but are not limited to, screen printing, inkjet printing, and 3D printing techniques. The use of screen printing, one paste at a time, can avoid mixing of the two pastes. With inkjet printing, one paste at a time can be printed by switching the inkjet heads one after the other.
It will be appreciated that the printed pattern includes a primary grid and a secondary grid, the positive and negative electrodes corresponding to the pattern design of the P-type and N-type regions on the back side of the solar cell.
In this embodiment, screen printing may be performed using a film, one of the boron paste and the phosphorus paste is printed first, and then the other of the boron paste and the phosphorus paste is printed after drying, and then dried.
Referring to fig. 4, in this embodiment, a boron paste is patterned on a substrate surface 201 to form a plurality of boron paste regions 202 and non-paste regions 203, and a phosphorus paste is printed on the non-paste regions 203 to form a plurality of phosphorus paste regions 204. The boron slurry region 202 and the phosphorous slurry region 204 intersect. Specifically, the boron slurry region 202 and the phosphorous slurry region 204 are parallel to each other, with one boron slurry region 202 being spaced between two adjacent phosphorous slurry regions 204.
It will be appreciated that in other embodiments, the boron and phosphorous slurry regions may intersect in other forms, such as non-parallel and non-intersecting, and that the particular manner of intersection of the boron and phosphorous slurry regions is not limited herein.
It is to be appreciated that in other embodiments, the boron paste and the phosphorous paste may be printed simultaneously to form a plurality of boron paste regions and a plurality of phosphorous paste regions. Therefore, the printing is performed simultaneously, so that the time can be saved, and the manufacturing efficiency can be improved.
Specifically, in step S14, the depth and concentration of diffusion of the boron atoms and phosphorus atoms can be controlled by precisely controlling the power, spot diameter, wavelength, pulse, time of the laser head. And the heavily doped effect can be achieved by selecting local heating diffusion through a laser SE technology.
Optionally, in step S14, the laser is controlled to be blue light, green light, or violet light, and the pulse width is nanosecond, picosecond, or femtosecond. Therefore, various lasers and various pulse widths are provided, and the laser can be selected according to actual conditions, so that the diffusion effect is guaranteed.
Note that, when the boron slurry region and the phosphorus slurry region are subjected to diffusion treatment by laser light, the type of laser light may be kept constant, or the type of laser light may be varied in blue light, green light, or violet light. Similarly, when the boron slurry region and the phosphorus slurry region are processed by the laser, the pulse width of the laser may be kept constant, or may be varied in nanoseconds, picoseconds, or femtoseconds.
In this embodiment, when the boron slurry region and the phosphorus slurry region are subjected to diffusion treatment by laser, the laser is green light, the wavelength of the laser is 532nm, the pulse width is nanosecond, the light spot is circular, the diameter of the light spot is 1um, and the light spot overlapping degree is 10%. Boron atoms and phosphorus atoms in the slurry after laser doping are diffused into the substrate to form an interdigital P-type region and an N-type region.
Referring to fig. 5, optionally, step S14 specifically includes:
step S142: laser light having the same parameters is emitted to the boron paste region and the phosphorus paste region.
Therefore, the operation is simple, and the manufacturing efficiency is high. Specifically, the laser may be controlled to be blue or green light, with a pulse width of nanoseconds or picoseconds.
Referring to fig. 5, optionally, step S14 specifically includes:
step S144: and emitting laser with corresponding parameters to the boron paste region and the phosphorus paste region according to the patterns of the boron paste region and/or the phosphorus paste region.
Alternatively, laser light having corresponding parameters may be emitted to the boron paste region and/or the phosphorus paste region according to the pattern of the boron paste region and/or the phosphorus paste region. In this way, the laser light emitted to the boron paste region is made suitable for the boron paste region, and the laser light emitted to the phosphorus paste region is made suitable for the phosphorus paste region, so that the diffusion effect of both paste regions can be optimized for the two paste regions. Specifically, the controllable laser is green light or purple light, and the pulse width is picosecond or femtosecond.
Optionally, a gap is provided between the boron slurry region and the phosphorus slurry region. Thus, the contact between the P area and the N area can be avoided, and electric leakage is avoided.
Referring to fig. 6, the method of manufacturing optionally further includes the steps of:
step S13: the boron slurry region and the phosphorus slurry region on the substrate are baked.
Therefore, the boron slurry is attached to the boron slurry area and cannot flow to the phosphorus slurry area, and the phosphorus slurry is attached to the phosphorus slurry area and cannot flow to the boron slurry area, so that subsequent diffusion is facilitated. In this embodiment, the boron slurry region and the phosphorus slurry region on the substrate may be dried using a drying furnace.
Specifically, the drying temperature may be in the range of 150 to 300 ℃ and the drying time may be in the range of 1 to 10 minutes. The drying temperature is 150 ℃, 152 ℃, 161 ℃, 178 ℃, 185 ℃, 190 ℃, 235 ℃, 264 ℃, 298 ℃, 300 ℃ for example. The drying time is, for example, 1min, 1.5min, 1.8min, 2min, 2.3min, 3min, 4.5min, 5min, 5.3min, 6.2min, 7.1min, 8min, 9.2min, 9.8min, 10min. Specific numerical values of the drying temperature and the drying time are not limited herein, as long as the foregoing ranges are satisfied.
Optionally, step S16 includes:
and respectively placing the substrates forming the P-type region and the N-type region into alkaline liquid medicine, hydrofluoric acid liquid medicine and hydrochloric acid liquid medicine for cleaning.
Therefore, the cleaning effect is better. Specifically, the substrate forming the P-type region and the N-type region is placed in alkaline liquid medicine, so that organic matters can be removed. The substrate forming the P-type region and the N-type region is placed in hydrofluoric acid liquid medicine, borosilicate glass (BSG) and phosphosilicate glass (PSG) can be removed, and residual alkaline liquid medicine on the surface of the silicon wafer is neutralized. The substrate forming the P-type region and the N-type region is placed in hydrochloric acid liquid medicine, so that metal ions remained on the surface can be removed.
Further, the substrate forming the P-type region and the N-type region can be placed in alkaline liquid medicine for more than 30 seconds; the substrate forming the P-type region and the N-type region can be placed in hydrofluoric acid liquid for more than 10 seconds; the substrate forming the P-type region and the N-type region may be placed in the hydrochloric acid solution for more than 10 seconds. Therefore, the cleaning agent can be thoroughly cleaned, and the cleaning effect is better. Still further, the alkaline medical fluid comprises a 10% by volume KOH medical fluid.
In this embodiment, PSG or BSG on the surface of the silicon wafer may be removed by using an HF solution with a volume concentration of 5%, the remaining portion of the boron slurry or phosphorous slurry is washed off by using a KOH solution with a volume concentration of 2%, and then the metal ions remaining on the surface of the silicon wafer are removed by using a mixed solution of HF and HCl, wherein the volume concentration of HF is 5% and the volume concentration of HCl is 10%.
In addition, laser etching may be performed on the surface of the substrate where the P-type region and the N-type region are formed, prior to step S16. Therefore, the organic matters, borosilicate glass and phosphosilicate glass in the slurry can be ablated by laser etching, and then the slurry is cleaned, so that the cleaning effect is good.
Referring to fig. 7, the method for manufacturing a solar cell according to the embodiment of the invention includes the following steps:
step S22: making a suede on the front surface of the substrate;
step S10: the manufacturing method of the interdigital back structure of any one of the above steps, so as to manufacture the interdigital back structure;
step S24: respectively depositing passivation antireflection films on the front side and the back side of the substrate;
step S26: and manufacturing an electrode on the back surface of the substrate.
According to the manufacturing method of the solar cell, the P-type region and the N-type region are manufactured by printing the slurry and processing the substrate with the printed slurry, multiple printing masks and stripping and cleaning are not needed, the operation flow is simple, and no precision requirement is required. Thus, the manufacturing efficiency of the interdigital back structure is improved. Thus, the performance and the manufacturing efficiency of the solar cell are improved.
Specifically, in step S22, the damaged layer and the surface oil stain of the substrate may be removed, the front surface of the substrate may be textured and the back surface of the substrate may be polished, and the metal ions remaining on the surface of the substrate may be removed. Thus, the substrate is prevented from being damaged by dirt, and subsequent operation is facilitated.
Further, the substrate comprises a P-type silicon wafer or an N-type silicon wafer. The resistivity of the substrate ranges from 1 to 15 Ω.cm. For example, 1.3.OMEGA.cm, 3.5.OMEGA.cm, 5.2.OMEGA.cm, 7.5.OMEGA.cm, 8.OMEGA.cm, 9.3.OMEGA.cm, 10.OMEGA.cm, 12.5.OMEGA.cm, 15.OMEGA.cm. The resistivity of the substrate is preferably in the range of 1-8Ω.cm. For example, 1.2.OMEGA.cm, 1.9.OMEGA.cm, 2.1.OMEGA.cm, 3.5.5.cm, 4.OMEGA.cm, 5.3.cm, 6.2.cm, 7.5.cm, 7.9.cm, 8.OMEGA.cm. The thickness of the substrate ranges from 120 to 250um, for example 120um, 122um, 131um, 156um, 178um, 193um, 205um, 213um, 224um, 236um, 245um, 248um, 250um.
Further, the substrate may be subjected to a KOH solution having a volume concentration of 10%Performing rough polishing treatment to remove a damaged layer; KOH and H can be used 2 O 2 Cleaning the substrate by the mixed solution to remove oil stains on the surface, KOH and H 2 O 2 The volume concentration of KOH in the mixed solution is 2%, H 2 O 2 The volume concentration is 10%; the RCA1# liquid can be used for cleaning the substrate to remove surface oil stains.
Further, under the condition that the substrate is a polycrystalline silicon wafer, a hole-shaped suede can be manufactured through acidic liquid medicine; in the case of monocrystalline silicon wafer, the substrate can be made into pyramid-shaped suede by alkaline liquid medicine.
In this example, a 2% by volume KOH solution was used in combination with a texturing additive to form pyramid-like textured surfaces on the front and back surfaces of the wafer at a temperature of 80℃ for 400 s. HF and HNO can be used 3 The back of the silicon wafer is subjected to rough polishing by the mixed solution, wherein the volume concentration of HF is 10 percent, and HNO is adopted 3 The volume concentration was 40%. The back side of the silicon wafer may be polished using a KOH solution at 80 ℃. The residual alkali solution on the surface of the silicon wafer can be neutralized by using mixed liquid of HF and HCL, wherein the volume concentration of HF is 5 percent, and the volume concentration of HCL is 10 percent. The RCA2# liquid can be used for cleaning the silicon wafer to remove metal ions on the surface of the silicon wafer.
For the explanation and explanation of step S10, please refer to the foregoing, and the description is omitted herein for avoiding redundancy.
Specifically, in step S24, the passivation anti-reflection film may be one layer or may be multiple layers. Further, PECVD can be used for deposition to form passivation anti-reflection films.
Alternatively, the passivation anti-reflection film may include at least one of a SiNx film, an AlOx film, a SiOx film, a SiOxNy film, an amorphous silicon film. Passivation anti-reflection films may be deposited on both the front and back sides of the substrate.
Specifically, the thickness of the backside deposited AlOx film may range from 0 to 30nm. For example, 0nm, 2nm, 3.5nm, 4.2nm, 5nm, 6.3nm, 7nm, 8nm, 9.5nm, 11.2nm, 13nm, 15.7nm, 21.3nm, 28nm, 30nm. The thickness of the back deposited SiNx film may range from 50-200nm. For example 50nm, 52nm, 63nm, 76nm, 88nm, 100nm, 132nm, 156nm, 173nm, 198nm, 200nm. The thickness of the front deposited AlOx film may range from 0 to 30nm. For example, 0nm, 2nm, 3.5nm, 4.2nm, 6nm, 6.3nm, 7nm, 8nm, 9.5nm, 11.2nm, 13nm, 15.7nm, 21.3nm, 28nm, 30nm. The thickness of the front deposited SiNx film may range from 50 to 150nm. For example 50nm, 52nm, 63nm, 76nm, 80nm, 100nm, 132nm, 146nm, 150nm.
In this embodiment, the passivation antireflection film is two layers, including an AlOx film and a SiNx film that are sequentially deposited, and the AlOx film and the SiNx film may be sequentially deposited on the back side first, and then the AlOx film and the SiNx film may be sequentially deposited on the front side. The thickness of the back deposited AlOx film was 8nm and the thickness of the SiNx film was 100nm. The thickness of the front deposited AlOx film was 6nm and the thickness of the sinx film was 80nm. Tube PECVD can be used to grow AlOx film and SiNx film on the back and front of the silicon wafer, and the process temperature is 450 ℃. Can be filled with SiH 4 And NH 3 Gas, siH 4 And NH 3 The gas flow ratio was 1:10 to produce SiNx films. Can be introduced with TMA and N 2 O gas, TMA and N 2 The O gas flow ratio was 1:10 to produce AlOx film.
Specifically, in step S26, the electrode on the P region may be made of aluminum paste, and the electrode on the N region may be made of silver paste. Further, the electrode may be formed by screen printing and high-temperature sintering, or may be formed by electroplating.
In this embodiment, an aluminum electrode may be fabricated above the P-type region by screen printing, and then dried in a drying oven, and then a silver electrode may be fabricated above the N-type region. The printing speed is 450mm/s, the pressure is 60N, the printing pattern corresponds to the laser grooving pattern, and finally the metal electrode is solidified in a sintering furnace.
Referring to fig. 8, optionally, after step S24, the method further includes:
step S25: and patterning and grooving is carried out on the passivation anti-reflection film on the back surface of the substrate.
Therefore, through the graphical slotting, after electrode slurry is sintered, the silicon body can form good ohmic contact with the electrode. Further, the grooves can be grooved by laser or scored by a metal needle. The specific manner of slotting is not limited herein.
In this embodiment, the P-type region and the N-type region are grooved by laser light, which is green light, with a wavelength of 532nm, and a pulse width of nanoseconds. Thus, the slotting effect is better.
Referring to fig. 9, optionally, before step S24, the method further includes:
step S23: and diffusing on the front surface of the substrate to form a doped layer.
Thus, the conversion efficiency of the battery is improved. Specifically, boron diffusion can be performed on an N-type substrate to form a surface floating junction, or phosphorus diffusion can be performed on the N-type substrate to form a surface electric field layer; boron diffusion can be performed on the P-type substrate to form a surface electric field layer, or phosphorus diffusion can be performed on the P-type substrate to form a surface floating junction.
In addition, after step S26, the method for manufacturing a solar cell further includes: and testing the electrical performance of the manufactured solar cell. Thus, the performance of the solar cell can be detected, which is beneficial to timely finding problems and improving.
Referring to fig. 10 and 11, a solar cell 100 according to an embodiment of the invention is manufactured by the method for manufacturing a solar cell according to any one of the above.
The solar cell 100 of the embodiment of the invention manufactures the P-type region and the N-type region by printing the slurry and processing the substrate on which the slurry is printed, does not need to print mask and remove film for cleaning for multiple times, has simple operation flow and has no precision requirement. Thus, the manufacturing efficiency of the interdigital back structure is improved. Thus, the performance and the manufacturing efficiency of the solar cell are improved.
Specifically, the solar cell 100 includes a passivation anti-reflection film 101, a doped layer 102, a substrate 103, a P-type region 104, an N-type region 105, an aluminum electrode 106, and a silver electrode 107. Further, the passivation anti-reflection film 101 includes Si 3 N 4 Film 1011 and Al 2 O 3 A film 1012. Note that the substrate 103 in fig. 10 is an n-type silicon wafer, and the substrate 103 in fig. 11 is a p-type silicon wafer. Note that the broken lines in fig. 10 and 11 indicate that the specific structure of this partial region is omitted in the drawings. In particular, the method comprises the steps of,the P-type region 104 and the N-type region 105, which are alternately arranged, and the aluminum electrode 106, which is arranged corresponding to the P-type region 104, and the silver electrode 107, which is arranged corresponding to the N-type region 105, are omitted.
For further explanation and description of the solar cell 100, reference is made to the foregoing, and no further description is given here for avoiding redundancy.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (11)
1. The manufacturing method of the interdigital back structure is characterized by comprising the following steps of:
patterning a printing paste on a surface of a substrate to form a plurality of paste regions, the paste comprising one of a boron paste and a phosphorous paste, the paste regions intersecting non-paste regions;
processing the substrate after printing the sizing agent to enable boron atoms and phosphorus atoms to be respectively diffused into the substrate to form a P-type region and an N-type region;
cleaning the surface of the substrate forming the P-type region and the N-type region;
processing the substrate of the printed paste to diffuse boron atoms and phosphorus atoms into the substrate to form a P-type region and an N-type region, respectively, comprising:
printing the other of the boron paste and the phosphorous paste on the non-paste region to form a plurality of boron paste regions and a plurality of phosphorous paste regions, the boron paste regions and the phosphorous paste regions intersecting;
emitting laser to the boron slurry area and the phosphorus slurry area so as to diffuse boron atoms and phosphorus atoms into the substrate respectively to form a P-type area and an N-type area;
the step of cleaning the surface of the substrate for forming the P-type region and the N-type region specifically comprises the following steps:
performing laser etching on the surfaces of the substrates forming the P-type region and the N-type region to ablate organic matters, borosilicate glass and phosphosilicate glass in the slurry;
placing the substrate forming the P-type region and the N-type region in alkaline liquid medicine to remove organic matters;
placing the substrate forming the P-type region and the N-type region in hydrofluoric acid liquid medicine to remove borosilicate glass and phosphosilicate glass and neutralize alkaline liquid medicine remained on the surface of the substrate;
and placing the substrate with the P-type region and the N-type region in hydrochloric acid liquid to remove metal ions remained on the surface.
2. The method of fabricating an interdigital backside structure of claim 1, wherein in the step of emitting laser light to the boron paste region and the phosphorus paste region, the laser light is controlled to be blue light, green light or violet light, and the pulse width is nanosecond, picosecond or femtosecond.
3. The method of fabricating an interdigital backside structure of claim 1, wherein the step of emitting laser light to the boron paste region and the phosphorous paste region comprises:
emitting laser light having the same parameters to the boron slurry region and the phosphorous slurry region; and/or the number of the groups of groups,
and emitting laser with corresponding parameters to the boron paste region and the phosphorus paste region according to the patterns of the boron paste region and/or the phosphorus paste region.
4. The method of fabricating an interdigital backside structure of claim 3, wherein,
in the step of emitting the laser with the same parameters to the boron paste region and the phosphorus paste region, controlling the laser to be blue light or green light, wherein the pulse width is nanosecond or picosecond;
and in the step of emitting laser with corresponding parameters to the boron paste region and the phosphorus paste region according to the patterns of the boron paste region and/or the phosphorus paste region, controlling the laser to be green light or purple light, and controlling the pulse width to be picosecond or femtosecond.
5. The method of fabricating an interdigital backside structure of claim 1, wherein a gap is provided between the boron paste region and the phosphorous paste region.
6. The method of fabricating an interdigital backside structure of any one of claims 1 to 5, further comprising the steps of:
the boron slurry region and the phosphorus slurry region on the substrate are baked.
7. The manufacturing method of the solar cell is characterized by comprising the following steps of:
making a suede on the front surface of the substrate;
the method of any one of claims 1 to 6, forming an interdigitated back structure;
respectively depositing passivation antireflection films on the front side and the back side of the substrate;
and manufacturing an electrode on the back surface of the substrate.
8. The method of claim 7, wherein after the steps of depositing passivation anti-reflection films on the front and back surfaces of the substrate, respectively, further comprises:
and patterning and grooving is carried out on the passivation anti-reflection film on the back surface of the substrate.
9. The method of claim 7, wherein before the steps of depositing passivation anti-reflection films on the front and back surfaces of the substrate, respectively, further comprises:
and diffusing on the front surface of the substrate to form a doped layer.
10. The method according to claim 7, wherein the passivation anti-reflection film comprises at least one of a SiNx film, an AlOx film, a SiOx film, a SiOxNy film, and an amorphous silicon film.
11. A solar cell manufactured by the method of any one of claims 7 to 10.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090065118A (en) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | The transparent electronic devices using carbon nano tube and manufacturing method thereof |
| JP2011035252A (en) * | 2009-08-04 | 2011-02-17 | Sharp Corp | Method of manufacturing semiconductor device |
| CN102263159A (en) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification |
| CN106057921A (en) * | 2016-07-20 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | Micro-nano textured solar cell emitter, solar cell provided with same, and manufacturing method thereof |
| CN106981544A (en) * | 2017-04-10 | 2017-07-25 | 泰州中来光电科技有限公司 | The preparation method and battery and its component, system of full back contact solar cell |
| CN107394009A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of wet etching method, double-side solar cell and preparation method thereof |
| CN107532300A (en) * | 2015-04-15 | 2018-01-02 | 默克专利股份有限公司 | The suppression parasitism locally adulterated for silicon wafer spreads and the printable doped dielectric based on collosol and gel |
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN110600500A (en) * | 2019-08-30 | 2019-12-20 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Perovskite and silicon-based back of body contact battery stack battery structure of N type |
| CN111933752A (en) * | 2020-08-13 | 2020-11-13 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
-
2021
- 2021-03-31 CN CN202110347741.7A patent/CN115224152B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090065118A (en) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | The transparent electronic devices using carbon nano tube and manufacturing method thereof |
| JP2011035252A (en) * | 2009-08-04 | 2011-02-17 | Sharp Corp | Method of manufacturing semiconductor device |
| CN102263159A (en) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification |
| CN107532300A (en) * | 2015-04-15 | 2018-01-02 | 默克专利股份有限公司 | The suppression parasitism locally adulterated for silicon wafer spreads and the printable doped dielectric based on collosol and gel |
| CN106057921A (en) * | 2016-07-20 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | Micro-nano textured solar cell emitter, solar cell provided with same, and manufacturing method thereof |
| CN106981544A (en) * | 2017-04-10 | 2017-07-25 | 泰州中来光电科技有限公司 | The preparation method and battery and its component, system of full back contact solar cell |
| CN107394009A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of wet etching method, double-side solar cell and preparation method thereof |
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN110600500A (en) * | 2019-08-30 | 2019-12-20 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Perovskite and silicon-based back of body contact battery stack battery structure of N type |
| CN111933752A (en) * | 2020-08-13 | 2020-11-13 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
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