CN102709389A - Method for preparing double-faced back contact solar cell - Google Patents
Method for preparing double-faced back contact solar cell Download PDFInfo
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- CN102709389A CN102709389A CN2012101667850A CN201210166785A CN102709389A CN 102709389 A CN102709389 A CN 102709389A CN 2012101667850 A CN2012101667850 A CN 2012101667850A CN 201210166785 A CN201210166785 A CN 201210166785A CN 102709389 A CN102709389 A CN 102709389A
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Abstract
The invention discloses a method for preparing a double-faced back contact solar cell, comprising following steps: (1) holing; (2) washing, and texturizing the front face and the back face of a silicon wafer; (3) arranging a first doping agent on the front face and in the hole of the silicon wafer, and arranging the first doping agent in the surrounding area of the hole in the back face of the silicon wafer, wherein the doping type of the first doping agent is opposite to that of the silicon wafer; (4) arranging a second doping agent in the non-hole surrounding area on the back face of the silicon wafer, wherein the doping type of the second doping agent is the same as that of the silicon wafer; (5) growing barrier layers on the front face and the back face of the silicon wafer; (6) annealing the silicon wafer at the temperature of 800 to 1000 DEG C, diffusing and making junctions; (7) etching peripheral junctions; (8) washing and removing the barrier layers; (9) arranging passivation anti-reflection films on the front face and the back face of the silicon wafer; and (10) arranging a porous metal electrode in the hole, printing and sintering. Adopting a method for arranging the doping agents, i.e. adopting the various type doping agents on two faces of the silicon wafer, the double-faced back contact solar cell realizes the co-diffusion of boron-phosphor in the presence of the barrier layers, thereby greatly simplifying process flows and reducing the production cost.
Description
Technical field
The present invention relates to a kind of preparation method of two-sided back contact solar cell, belong to the solar cell field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly a kind of cleaning, general and the most potential alternative energy source.At present; In all solar cells; Crystal silicon solar energy battery is one of solar cell that obtains business promotion on a large scale; This is that silicon solar cell is compared the solar cell of other types simultaneously because silicon materials have very abundant reserves in the earth's crust, and excellent electric property and mechanical performance are arranged.Therefore, crystal-silicon solar cell in the photovoltaic field in occupation of consequence.High efficiency is the development trend of present crystal-silicon solar cell; Through improving the passivation on surface-texturing, selective emitter junction, front surface and back of the body surface; Laser buries the transformation efficiency that technology such as grid improve solar cell; But because it needs special devices and complicated technological process, industrialization process is restricted.
At present, back contact silicon solar cell (MWT solar cell) has received everybody extensive concern, and its advantage is: because its front does not have the main grid line; Reduced the shading of battery sheet; Improved the conversion efficiency of battery sheet, when making assembly, can reduce the shading influence of welding the battery sheet; Adopt new packaged type can reduce the series resistance of battery sheet simultaneously, reduce the power loss of battery sheet.The preparation method of traditional back of the body contact crystalline silicon solar cell is: making herbs into wool, diffusion system knot, etching, cleaning, plated film, punching, printing, sintering.
On the other hand, under the situation that silicon materials are in short supply day by day now, in order fully to improve the power output of solar cell, the two-sided focus that receives light type crystalline silicon solar cell to become research.Disclose a kind of two-sided light type crystalline silicon solar cell that receives like Chinese utility model patent CN201699033U, it discloses its manufacture method in Instructions Page 3: prerinse is carried out with original silicon chip in (1), removes affected layer, making herbs into wool, as monocrystalline substrate; (2) silicon chip carries out the single face boron diffusion back-to-back, makes the P+ layer; (3) non-expansion boron layer is carried out the single face corrosion and removes Pyrex with wet-oxygen oxidation; (4) expanding making silica masking layer on the boron layer P+; (5) adopt the method for single face diffusion back-to-back equally, carry out follow-up phosphorous diffusion, make the N+ layer; (6) remove phosphorosilicate glass after expansion phosphorus technology is accomplished; (7) plasma etching trimming knot; (8) with PECVD at silicon chip double-sided deposition silicon nitride antireflective coating; (9) silk screen printing double-sided electrode, sintering is processed the two-sided light type crystalline silicon solar cell that receives.
Yet, owing in advance the one side of silicon chip is provided with mask, thereby after the boron diffusion of step (2), can produce serious diffraction in the one side of non-expansion boron face, a large amount of foreign atoms gets into the non-expansion boron layer of silicon chip, with the performance that has a strong impact on another side.Therefore, step (3) need be carried out the single face corrosion and remove Pyrex with the method for wet-oxygen oxidation non-expansion boron layer.Obviously, this procedure is complicated, and may cause damage to the matte of non-expansion boron face.In addition, the secondary diffusion technology also makes whole technical process comparatively complicated.
Summary of the invention
The object of the invention provides a kind of preparation method of two-sided back contact solar cell.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) perforate on silicon chip;
(2) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(3) in the front of silicon chip and hole, first dopant is set, first dopant is set in the peripheral region in the hole at the silicon chip back side; The doping type of said first dopant and the type opposite of silicon chip;
(4) in the peripheral region, non-hole at the silicon chip back side second dopant is set; The doping type of said second dopant is identical with the type of silicon chip;
(5) on the front and back of the silicon chip barrier layer of all growing;
(6) silicon chip that step (5) is obtained is annealed under 800 ~ 1000 ℃, diffusion system knot;
(7) etching periphery knot;
(8) cleaning silicon chip surface and remove the barrier layer;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
In the preceding text, the doping type of said first dopant and the type opposite of silicon chip, the doping type of second dopant is identical with the type of silicon chip; If N type silicon chip, with first dopant of silicon chip opposite types can be boron slurry or boron nano-silicon dopant, with second dopant of silicon chip same type can be phosphorus slurry or phosphorus nano-silicon dopant; If P type silicon chip, with first dopant of silicon chip opposite types can be phosphorus slurry or phosphorus nano-silicon dopant, with second dopant of silicon chip same type can be boron slurry or boron nano-silicon dopant.
The method that dopant is set can adopt the existing method of silk screen printing or spraying.
The peripheral region in the hole at the silicon chip back side is meant that the silicon chip back side is the zone of square, circle, triangle or arbitrary shape in the scope of 2 ~ 10mm in the center of circle with the center, hole of perforate in the said step (3).
The peripheral region, non-hole at the middle silicon chip back side of said step (4) is meant the zone at the silicon chip back side except the peripheral region in the hole at the above-mentioned silicon chip back side.
Diffusion system knot in the said step (6) is to accomplish with the form of annealing, can be constant temperature diffusion or alternating temperature diffusion; But not existing TongYuan diffusion.Said annealing can be used boiler tube annealing, or continuous tunnel furnace annealing.
In the technique scheme, the concentration of the main doping composition of first dopant in the said step (3) is 5 ~ 50%; The concentration of the main doping composition of second dopant in the step (4) is 5 ~ 50%.
The present invention can regulate the concentration and side's resistance of the knot of doping through doping concentration and diffusion annealing in the dopant, reaches more excellent technology coupling.
In the technique scheme, the barrier layer in the said step (5) is a silica barrier layer, and its thickness is 40 ~ 200 nm.Silica barrier layer can adopt the method for thermal oxidation or PECVD.
In the technique scheme, the concentration of the emitter junction of the silicon chip that said step (6) obtains is 10
17~ 10
19Atom.cm
-3, junction depth is 0.2 ~ 0.5 micron, side's resistance is 50 ~ 100 Ω/; The concentration of the height knot of silicon chip is 10
18~ 10
21Atom.cm
-3, junction depth is 0.5 ~ 1.5 micron, side's resistance is 10 ~ 50 Ω/.
In the technique scheme, the diffusion atmosphere in the said step (6) is nitrogen, and its flow is 5000 ~ 30000sccm; Perhaps be the gaseous mixture of nitrogen and oxygen, wherein, the flow of nitrogen is 5000 ~ 30000sccm, and the flow of oxygen is 500 ~ 10000sccm.
Corresponding with it another kind of technical scheme, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) in the front of silicon chip first dopant is set; The doping type of said first dopant and the type opposite of silicon chip;
(3) in the peripheral region, non-hole at the silicon chip back side second dopant is set; The doping type of said second dopant is identical with the type of silicon chip;
(4) on the front and back of the silicon chip barrier layer of all growing;
(5) silicon chip that step (4) is obtained is annealed under 800 ~ 1000 ℃, diffusion system knot;
(6) etching periphery knot; The barrier layer is also removed in the cleaning silicon chip surface;
(7) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(8) perforate on silicon chip;
(9) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
In the technique scheme, the concentration of the main doping composition of first dopant in the said step (2) is 5 ~ 50%; The concentration of the main doping composition of second dopant in the step (3) is 5 ~ 50%.
In the technique scheme, the barrier layer in the said step (6) is a silica barrier layer, and its thickness is 40 ~ 200 nm.Silica barrier layer can adopt the method for thermal oxidation or PECVD.
In the technique scheme, the concentration of the emitter junction of the silicon chip that said step (5) obtains is 10
17~ 10
19Atom.cm
-3, junction depth is 0.2 ~ 0.5 micron, side's resistance is 50 ~ 100 Ω/; The concentration of the height knot of silicon chip is 10
18~ 10
21Atom.cm
-3, junction depth is 0.5 ~ 1.5 micron, side's resistance is 10 ~ 50 Ω/.
In the technique scheme, the diffusion atmosphere in the said step (5) is nitrogen, and its flow is 5000 ~ 30000sccm; Perhaps be the gaseous mixture of nitrogen and oxygen, wherein, the flow of nitrogen is 5000 ~ 30000sccm, and the flow of oxygen is 500 ~ 10000sccm.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention has developed a kind of preparation method of two-sided back contact solar cell, and its preparation technology is simple, easy operating; Have good electrical properties by its two-sided back contact solar cell that makes, its photoelectric conversion efficiency can reach more than 19.5%.
2. the present invention adopts the method that dopant is set, and on the two sides of silicon chip dissimilar dopants is set, and cooperates the barrier layer; Realized the common diffusion of boron phosphorus, i.e. once diffusion, thus simplified technological process greatly; Reduce production cost, obtained significant effect.
3. the present invention all is provided with the barrier layer at the tow sides of silicon chip, thereby the counterdiffusion of boron phosphorus can prevent to spread the time, has improved the quality of emitter.
Description of drawings
Fig. 1 ~ 9th, the preparation process sketch map of the embodiment of the invention one;
Figure 10 ~ 18th, the preparation process sketch map of the embodiment of the invention two.
Wherein, 1, N type silicon chip; 2, front; 3, the back side; 4, hole; 5, hole wall; 6, matte; 7, boron slurry; 8, phosphorus slurry; 9, barrier layer; 10, emitter junction; 11, height knot; 12, antireflective coating; 13, front electrode; 14, mesoporous metal electrode; 15, back electrode.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Shown in Fig. 1 ~ 9, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) perforate on N type silicon chip 1, the hole wall 5 in hole 4 is as shown in Figure 1;
(2) affected layer is removed on the cleaning silicon chip surface, carries out making herbs into wool at the front 2 and the back side 3 of silicon chip, forms matte 6, and is as shown in Figure 2;
(3) printing boron slurry 7 in the front of silicon chip and hole, the mass concentration of boron slurry mesoboric acid is 20%, 250 ℃ of oven dry 2 minutes; At the peripheral region in hole, silicon chip back side printing boron slurry, dried 2 minutes for 250 ℃, like Fig. 3;
(4) at the peripheral region, non-hole of silicon chip back printing phosphorus slurry 8, the mass concentration of phosphoric acid is 25%, 250 ℃ of oven dry 2 minutes in the phosphorus slurry, like Fig. 4;
(5) front and back at silicon chip adopts PECVD cvd silicon oxide barrier layer 9, and its thickness is 90nm, like Fig. 5;
(6) silicon chip that step (5) is obtained spread 60 minutes 900 ℃ of annealing, and the atmosphere of annealing is N
2N
2Flow is 20000 sccm; The concentration of emitter junction 10 is 10
18Atom.cm
-3, junction depth is 0.35 micron, side's resistance is 70 Ω/; It is 10 that height is tied 11 concentration
21Atom.cm
-3, junction depth is 1.0 microns, side's resistance is 35 Ω/, like Fig. 6;
(7) etching periphery knot is like Fig. 7;
(8) cleaning silicon chip surface and remove silica barrier layer;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film 12, like Fig. 8;
(10) mesoporous metal electrode 14 is set in the hole; The printed on both sides metal electrode, sintering forms front electrode 13 and back electrode 15, can obtain two-sided back contact solar cell, like Fig. 9.
Embodiment two
Shown in Figure 10 ~ 18, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) cleans N type silicon chip 1 surface, remove affected layer, carry out making herbs into wool, form matte 6, like Figure 10 at the front 2 and the back side 3 of silicon chip;
(2) at the front of silicon chip printing boron slurry 7, the mass concentration of boron slurry mesoboric acid is 20%, 250 ℃ of oven dry 2 minutes, like Figure 11;
(3) at the peripheral region, non-hole at silicon chip back side printing phosphorus slurry 8, the mass concentration of phosphoric acid is 30%, 250 ℃ of oven dry 2 minutes in the phosphorus slurry, like Figure 12;
(4) front and back at silicon chip adopts PECVD cvd silicon oxide barrier layer 9, and its thickness is 90nm, like Figure 13;
(5) silicon chip that step (4) is obtained is annealed under 900 ℃, diffusion system knot, and the atmosphere of annealing is N
2N
2Flow is 20000 sccm; The concentration of emitter junction 10 is 10
18Atom.cm
-3, junction depth is 0.3 micron, and side resistance is 80 Ω/, and it is 10 that height is tied 11 concentration
20, junction depth is 1.2 microns, side's resistance is 30 Ω/, like Figure 14;
(6) etching periphery knot; The barrier layer is also removed in the cleaning silicon chip surface, like Figure 15;
(7) at the front and back of silicon chip passivated reflection reducing is set and penetrates film 12; Like Figure 16;
(8) perforate on silicon chip, the hole wall 5 in hole 4 is shown in figure 17;
(9) mesoporous metal electrode 14 is set in the hole; The printed on both sides metal electrode, sintering forms front electrode 13 and back electrode 15, can obtain two-sided back contact solar cell, like Figure 18.
Embodiment three
A kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) perforate on P type silicon chip;
(2) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip, forms matte;
(3) printing phosphorus slurry in the front of silicon chip and hole, the mass concentration of phosphoric acid is 15%, 250 ℃ of oven dry 2 minutes in the phosphorus slurry; At the peripheral region in hole, silicon chip back side printing phosphorus slurry, dried 2 minutes for 250 ℃;
(4) at the peripheral region, non-hole of silicon chip back printing boron slurry, the mass concentration of boron slurry mesoboric acid is 30%, 250 ℃ of oven dry 2 minutes;
(5) front and back at silicon chip adopts PECVD cvd silicon oxide barrier layer, and its thickness is 90nm;
(6) silicon chip that step (5) is obtained spread 60 minutes 950 ℃ of annealing, and the atmosphere of annealing is N
2N
2Flow is 20000 sccm; The concentration of emitter junction 10 is 10
18Atom.cm
-3, junction depth is 0.35 micron, side's resistance is 70 Ω/; It is 10 that height is tied 11 concentration
20Atom.cm
-3, junction depth is 1.0 microns, side's resistance is 40 Ω/;
(7) etching periphery knot;
(8) cleaning silicon chip surface and remove silica barrier layer;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering forms front electrode and back electrode, can obtain two-sided back contact solar cell.
Claims (10)
1. the preparation method of a two-sided back contact solar cell is characterized in that, comprises the steps:
(1) perforate on silicon chip;
(2) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(3) in the front of silicon chip and hole, first dopant is set, first dopant is set in the peripheral region in the hole at the silicon chip back side; The doping type of said first dopant and the type opposite of silicon chip;
(4) in the peripheral region, non-hole at the silicon chip back side second dopant is set; The doping type of said second dopant is identical with the type of silicon chip;
(5) on the front and back of the silicon chip barrier layer of all growing;
(6) silicon chip that step (5) is obtained is annealed under 800 ~ 1000 ℃, diffusion system knot;
(7) etching periphery knot;
(8) cleaning silicon chip surface and remove the barrier layer;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
2. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: the concentration of the main doping composition of first dopant in the said step (3) is 5 ~ 50%; The concentration of the main doping composition of second dopant in the step (4) is 5 ~ 50%.
3. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: the barrier layer in the said step (5) is a silica barrier layer, its thickness is 40 ~ 200 nm.
4. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: the concentration of the emitter junction of the silicon chip that said step (6) obtains is 10
17~ 10
19Atom.cm
-3, junction depth is 0.2 ~ 0.5 micron, side's resistance is 50 ~ 100 Ω/; The concentration of the height knot of silicon chip is 10
18~ 10
21Atom.cm
-3, junction depth is 0.5 ~ 1.5 micron, side's resistance is 10 ~ 50 Ω/.
5. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: the diffusion atmosphere in the said step (6) is nitrogen, its flow is 5000 ~ 30000sccm; Perhaps be the gaseous mixture of nitrogen and oxygen, wherein, the flow of nitrogen is 5000 ~ 30000sccm, and the flow of oxygen is 500 ~ 10000sccm.
6. the preparation method of a two-sided back contact solar cell is characterized in that, comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) in the front of silicon chip first dopant is set; The doping type of said first dopant and the type opposite of silicon chip;
(3) in the peripheral region, non-hole at the silicon chip back side second dopant is set; The doping type of said second dopant is identical with the type of silicon chip;
(4) on the front and back of the silicon chip barrier layer of all growing;
(5) silicon chip that step (4) is obtained is annealed under 800 ~ 1000 ℃, diffusion system knot;
(6) etching periphery knot; The barrier layer is also removed in the cleaning silicon chip surface;
(7) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(8) perforate on silicon chip;
(9) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
7. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: the concentration of the main doping composition of first dopant in the said step (2) is 5 ~ 50%; The concentration of the main doping composition of second dopant in the step (3) is 5 ~ 50%.
8. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: the barrier layer in the said step (4) is a silica barrier layer, its thickness is 40 ~ 200 nm.
9. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: the concentration of the emitter junction of the silicon chip that said step (5) obtains is 10
17~ 10
19Atom.cm
-3, junction depth is 0.2 ~ 0.5 micron, side's resistance is 50 ~ 100 Ω/; The concentration of the height knot of silicon chip is 10
18~ 10
21Atom.cm
-3, junction depth is 0.5 ~ 1.5 micron, side's resistance is 10 ~ 50 Ω/.
10. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: the diffusion atmosphere in the said step (5) is nitrogen, its flow is 5000 ~ 30000sccm; Perhaps be the gaseous mixture of nitrogen and oxygen, wherein, the flow of nitrogen is 5000 ~ 30000sccm, and the flow of oxygen is 500 ~ 10000sccm.
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| CN102969371A (en) * | 2012-12-20 | 2013-03-13 | 揭阳中诚集团有限公司 | Structure of two-surface solar cell and manufacturing method of structure |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
| CN104157740A (en) * | 2014-09-03 | 2014-11-19 | 苏州阿特斯阳光电力科技有限公司 | N-type two-side solar cell manufacturing method |
| CN104766790A (en) * | 2015-03-11 | 2015-07-08 | 苏州启澜功率电子有限公司 | Phosphorus and boron liquid source one-shot perfect diffusion process |
| CN117117044A (en) * | 2023-10-24 | 2023-11-24 | 金阳(泉州)新能源科技有限公司 | Combined passivation back contact battery and primary annealing preparation method thereof |
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| CN117117044A (en) * | 2023-10-24 | 2023-11-24 | 金阳(泉州)新能源科技有限公司 | Combined passivation back contact battery and primary annealing preparation method thereof |
| CN117117044B (en) * | 2023-10-24 | 2024-01-09 | 金阳(泉州)新能源科技有限公司 | Combined passivation back contact battery and primary annealing preparation method thereof |
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| CN102709389B (en) | 2015-04-22 |
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