CN101976708A - Method for improving photoelectric conversion efficiency of crystal silicon solar battery - Google Patents
Method for improving photoelectric conversion efficiency of crystal silicon solar battery Download PDFInfo
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- CN101976708A CN101976708A CN2010102915628A CN201010291562A CN101976708A CN 101976708 A CN101976708 A CN 101976708A CN 2010102915628 A CN2010102915628 A CN 2010102915628A CN 201010291562 A CN201010291562 A CN 201010291562A CN 101976708 A CN101976708 A CN 101976708A
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Abstract
The invention discloses a method for improving photoelectric conversion efficiency of a crystal silicon solar battery. The method is characterized in that: based on the conventional crystal silicon solar battery process, high-doped parallel linear arrays are formed on the surface of an emitter by adopting processes such as screen printing or local laser annealing and the like; and the high-doped parallel linear arrays are crossed with fine grids of a metal electrode in a vertical or certain angle mode. The method improves the ohmic contact of the metal grid electrode and silicon, and meanwhile reduces the number of the required fine grids so as to reduce the shading area and improve the photoelectric conversion efficiency of the crystal silicon solar battery. The method has low equipment investment, does not need to change other conventional process equipment, and is suitable for large-scale industrialized production.
Description
Technical field
The present invention relates to the manufacture of solar cells technical field, particularly a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency.
Background technology
Existing technological process of commercially producing crystal silicon solar energy battery is followed successively by: making herbs into wool forms anti-reflection structure on surface; Diffusing, doping forms PN junction so that photo-generated carrier separates; Remove periphery P N knot and prevent leakage current; The coated with antireflection film; Sintering forms metallization behind the screen printing electrode.This technological process is simple, is easy to large-scale production, but the solar cell photoelectric conversion efficiency of preparation is lower.
In the technology of existing preparation crystal silicon solar energy battery, the bottleneck that limit battery efficient improves is the mutual restriction of diffusion and metallization operation.Diffusing procedure requires low concentration doping: low surface doping concentration can reduce the recombination velocity of photo-generated carrier, improves the open circuit voltage and the short circuit current of battery; On the other hand, photo-generated carrier is the highest in the generation rate of battery surface, and shallow diffused junction can obtain high collection rate in the zone of high carrier generation rate, helps improving the short circuit current of battery.On the contrary, it is high-concentration dopant that the metallization operation requires the battery front surface, so that positive electrode and silicon form good Ohmic contact.Low surface doping concentration the contact resistance of positive electrode and silicon is increased, and the sheet resistance of diffusion region is also bigger, thereby the solar cell series resistance is risen, and then reduces fill factor, curve factor, finally causes the solar cell photoelectric conversion efficiency to descend.
Low concentration doping helps improving open circuit voltage and short circuit current angle, and high-concentration dopant helps improving fill factor, curve factor.Therefore in the general conventional crystal silicon solar energy battery technology, doping content considerations of must compromising, balance point of selection between aspect above-mentioned two.But this common process still because can not take into account the good ohmic contact and hang down series resistance, causes efficient lower.The method of contradiction is that the surface makes the selectivity emission electrode between the two in order to solve: promptly adopt high-concentration dopant at the electrode contact area, adopt low concentration doping in photo-absorption region.
Tradition realizes the technological requirement high-concentration dopant zone of selective emitter and strict aligning of electrode of back metallization operation preparation, realizes overlapping.In order to realize above requirement, must adopt photoetching technique or and accurate aligning equipment, complex process is difficult to be applied in the actual production; And the battery efficiency income bring that rises may be not sufficient to the loss that compensating cost increases and productivity ratio decline is brought, and is commercial and infeasible.
Summary of the invention
The object of the present invention is to provide a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency.
To achieve these goals, the technical solution adopted in the present invention is: a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency, this method forms the high-concentration dopant array of parallel lines in the emitter surface of crystal silicon solar energy battery low concentration doping, and the parallel lines spacing is 0.3mm～3mm.
As preferably, the square resistance of described low concentration doping is 60 Ω/～200 Ω/, and the square resistance of described high-concentration dopant is 10 Ω/～40 Ω/.
As preferably, described high-concentration dopant array of parallel lines is vertical with the thin grid line of emitter metal or intersect at a certain angle.
The formation technology of described high-concentration dopant array of parallel lines is technology such as silk screen printing or local laser annealing.
Compared with prior art, the present invention has following advantage aspect the raising crystal silicon cell photoelectric conversion efficiency:
The whole diffusingsurface of battery, outside the highly doped array of parallel lines in part, remaining most of zone is a light dope concentration, helps reducing surface recombination and then improves short circuit current and open circuit voltage;
The high-concentration dopant array of parallel lines has been improved the ohmic contact between silion cell positive electrode and the silicon, and fill factor, curve factor is risen;
Highly doped line array has the favorable conductive characteristic, has certain electric current collection effect, so can suitably reduce emitter metal grid line number, make light-receiving area improve;
More than three aspect effects the cell photoelectric conversion efficiency is risen.
Get final product because highly doped array of parallel lines and the superfine grid line of positive electricity are crossing among the present invention, needn't overlap, thereby not need to adopt high precision alignment equipment.The present device investment is low, need not change other existing equipmenies, is suitable for large-scale production.
Description of drawings
Fig. 1 is the process schematic representation of the embodiment of the invention 1 and embodiment 2;
Fig. 2 is the process schematic representation of the embodiment of the invention 3.
Embodiment
Below in conjunction with accompanying drawing embodiment the present invention is done to describe in further detail, but should not limit protection scope of the present invention with this.
Fig. 1 and Fig. 2 are process schematic representation of the present invention, and wherein Reference numeral is: crystal silicon chip diffusingsurface 1, emitter metal main grid 2, the thin grid 3 of emitter metal, high-concentration dopant array of parallel lines 4.
A kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency of the present invention comprises the steps:
1. after monocrystalline silicon piece or polysilicon chip are finished making herbs into wool, carry out the low concentration diffusing, doping;
2. form the high-concentration dopant array that becomes parallel wire vertical or that certain angle intersects to arrange with the thin grid of subsequent transmission utmost point metal at the silicon chip diffusingsurface;
3. prepare antireflective coating at diffusingsurface, technology such as employing silk screen printing prepare electrode, form metallization through subsequent techniques such as sintering, finish battery and make.
Wherein, the means that form the high-concentration dopant array of parallel lines in the step 2 have multiple, can be laser surface heat treatment or secondary diffusions etc. on the after-baking of printing phosphorus slurry figure, the phosphorosilicate glass.
Embodiment 1:
1. P type polysilicon chip is carried out cleaning before sour making herbs into wool and the diffusion;
2. silicon chip is at POCl
3Carry out the high temperature phosphorous diffusion under the atmosphere, whole diffusingsurface is a low concentration doping, and square resistance is 60 Ω/, simultaneously POCl
3Form phosphorosilicate glass with pasc reaction;
3. as shown in Figure 1, laser with power 10W wavelength 532nm carries out parallel lines scanning at the silicon chip surface that is coated with phosphorosilicate glass, make phosphorous diffusion in the exposure place phosphorosilicate glass in silicon, form the thin array of parallel lines of high-concentration dopant, the parallel lines spacing is 2mm;
4. silicon chip is carried out the edge etching, remove periphery P N knot;
5. behind the flush away silicon chip surface phosphorosilicate glass, at diffusingsurface deposited silicon nitride antireflective coating;
6. the positive backplate silver of silk screen printing is starched and back electric field aluminum pulp, and wherein the thin grid line of emitter metal is vertical with highly doped array of parallel lines, finishes battery and make behind sintering.
Embodiment 2:
1. the p type single crystal silicon sheet is carried out cleaning before alkali making herbs into wool and the diffusion;
2. silicon chip is at POCl
3Carry out the high temperature phosphorous diffusion in the atmosphere, whole diffusingsurface is a low concentration doping, and square resistance is 120 Ω/, simultaneously POCl
3Form phosphorosilicate glass with pasc reaction;
3. as shown in Figure 1, with being coated with the silicon chip surface scanning of phosphorosilicate glass with the laser of power 10W wavelength 532nm, make phosphorous diffusion in the exposure place phosphorosilicate glass in silicon, form highly doped thin array of parallel lines, the parallel lines spacing is 0.3mm;
4. silicon chip is carried out the edge etching, remove periphery P N knot;
5. behind the flush away silicon chip surface phosphorosilicate glass, at diffusingsurface deposited silicon nitride antireflective coating;
6. the positive backplate silver of silk screen printing is starched and back electric field aluminum pulp, and wherein the thin grid line of emitter metal is vertical with highly doped array of parallel lines, finishes battery and make behind sintering.
Embodiment 3:
1. the p type single crystal silicon sheet is carried out cleaning before alkali making herbs into wool and the diffusion;
2. silicon chip is at POCl
3Carry out the high temperature phosphorous diffusion in the atmosphere, whole diffusingsurface is a low concentration doping, and square resistance is 200 Ω/, finishes diffusion back flush away silicon chip surface phosphorosilicate glass;
3. by figure shown in Figure 2, at silicon chip diffusingsurface printing phosphorus slurry, figure forms the array of parallel lines shape, and the lines spacing is 0.8mm.The angle of this array and silicon chip straight flange is 45 °.Then silicon chip is put into the chain type diffusion furnace and carried out rapid diffusion, print phosphorus slurry zone like this and form high-doped zone;
4. silicon chip is carried out the edge etching, remove periphery P N knot;
5. at diffusingsurface deposited silicon nitride antireflective coating;
6. the positive backplate silver of silk screen printing is starched and back electric field aluminum pulp, and wherein superfine grid line of positive electricity and highly doped array of parallel lines are at 45 intersects, and finishes battery through sintering and makes.
Claims (4)
1. method that improves the crystal silicon solar energy battery photoelectric conversion efficiency is characterized in that: the emitter surface at the crystal silicon solar energy battery low concentration doping forms the high-concentration dopant array of parallel lines, and the parallel lines spacing is 0.3mm～3mm.
2. a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency according to claim 1, it is characterized in that: the square resistance of described low concentration doping is 60 Ω/～200 Ω/, and the square resistance of described high-concentration dopant is 10 Ω/～40 Ω/.
3. a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency according to claim 1 and 2 is characterized in that: described high-concentration dopant array of parallel lines is vertical with the thin grid line of emitter metal or crossing at a certain angle.
4. a kind of method that improves the crystal silicon solar energy battery photoelectric conversion efficiency according to claim 3 is characterized in that: the formation technology of described high-concentration dopant array of parallel lines is silk screen printing or local laser annealing technology.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102582220A (en) * | 2012-02-29 | 2012-07-18 | 苏州欧方电子科技有限公司 | Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate |
| CN103606570A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| CN103606575A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
| CN103904152A (en) * | 2012-12-27 | 2014-07-02 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method thereof and radiation detector |
| CN106409946A (en) * | 2016-09-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Crystalline silicon cell piece and preparation method thereof |
| CN106981525A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | P-type double-sided solar battery and preparation method thereof |
| CN115274869A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Passivation contact structure with same polarity, battery, preparation process, assembly and system |
| CN115274871A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Contact structure applied to tunneling type solar cell, solar cell with contact structure and manufacturing method of solar cell |
| WO2023077787A1 (en) * | 2021-11-05 | 2023-05-11 | 通威太阳能（成都）有限公司 | Se laser-doped pattern of perc battery, and perc battery manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102582220A (en) * | 2012-02-29 | 2012-07-18 | 苏州欧方电子科技有限公司 | Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate |
| CN103904152B (en) * | 2012-12-27 | 2017-04-12 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method thereof and radiation detector |
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| CN103606575A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Solar cell |
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| CN106409946A (en) * | 2016-09-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Crystalline silicon cell piece and preparation method thereof |
| CN106409946B (en) * | 2016-09-27 | 2019-02-15 | 中国电子科技集团公司第四十八研究所 | Crystal-silicon battery slice and preparation method thereof |
| CN106981525A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | P-type double-sided solar battery and preparation method thereof |
| CN115274869A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Passivation contact structure with same polarity, battery, preparation process, assembly and system |
| CN115274871A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Contact structure applied to tunneling type solar cell, solar cell with contact structure and manufacturing method of solar cell |
| CN115274869B (en) * | 2021-04-30 | 2023-11-10 | 泰州中来光电科技有限公司 | Passivation contact structure with same polarity, battery, preparation process, assembly and system |
| CN115274871B (en) * | 2021-04-30 | 2024-04-02 | 泰州中来光电科技有限公司 | Contact structure applied to tunneling solar cell, solar cell with contact structure and manufacturing method of solar cell |
| WO2023077787A1 (en) * | 2021-11-05 | 2023-05-11 | 通威太阳能（成都）有限公司 | Se laser-doped pattern of perc battery, and perc battery manufacturing method |
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Application publication date: 20110216 |