CN101826573A - Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery - Google Patents
Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery Download PDFInfo
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- CN101826573A CN101826573A CN200910264900A CN200910264900A CN101826573A CN 101826573 A CN101826573 A CN 101826573A CN 200910264900 A CN200910264900 A CN 200910264900A CN 200910264900 A CN200910264900 A CN 200910264900A CN 101826573 A CN101826573 A CN 101826573A
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Abstract
The invention relates to the technical field of a metal electrode of a crystalline silicon solar battery, in particular to a method for preparing a semiconductor secondary grid-metal primary grid crystalline silicon solar battery. The semiconductor secondary grid-metal primary grid crystalline silicon solar battery consists of a plurality of strips of semiconductor secondary grids (1) and a plurality of strips of metal electrode primary grid lines (2). The method has the advantages of completely utilizing the advantages, such as simpleness, low cost, high yield and high automation degree, of a screen printing process, effectively reducing the light-shading area of the metal electrode of the solar battery, and improving the conversion efficiency of the metal electrode of the solar battery.
Description
Technical field:
What the present invention relates to is the technical field of crystal-silicon solar cell metal electrode, and that be specifically related to is a kind of semiconductor secondary grid-metal primary grid crystalline silicon solar battery preparation method.
Background technology:
Because metal has conductive characteristic preferably, the front electrode of crystal-silicon solar cell all adopts metal to prepare at present, especially argent.Specifically be to utilize the silk screen version that metal electrode sizing is printed onto the certain electrode pattern of formation on the silicon chip, and then carry out high temperature sintering, make metal-cured and form alloy and ohmic contact at junction and silicon chip.When adopting metal to prepare the front electrode of solar cell, because the restriction of metal electrode sizing and silk-screen printing technique self, be difficult to do the width of metal grid lines very meticulous, this will cause bigger electrode at the shading area, thereby cause the photoelectric conversion efficiency of the solar battery that reduces.At present, the minimum dimension of the metal electrode of the crystal-silicon solar cell of silk screen printing is about 100-110 μ m.When the width that requires metal electrode further reduces, (for example be reduced to below the 100 μ m), will occur stopping up the phenomenon of the gate electrode line fracture that causes inevitably owing to the silk screen version.
In order to prepare more meticulous solar cell metal electrode, to reduce the shading area of metal electrode, improve photoelectric conversion efficiency, people attempt to adopt other method to prepare the metal electrode of solar cell, for example adopt methods such as photoetching, plating, laser to process, even metal electrode is produced on the back side of solar cell.Although these methods all possess meticulousr solar cell metal electrode, reduced the shading area of metal electrode, but its manufacture craft is all comparatively complicated, and cost is higher, is difficult to simple, low-cost, the high yield of silk-screen printing technique and characteristic such as increasingly automated comparable.Just because of this, this solar cell that also makes these methods of employing prepare electrode is significantly smaller than silk-screen printing technique on the occupation rate in market.
Summary of the invention:
The purpose of this invention is to provide a kind of semiconductor secondary grid-metal primary grid crystalline silicon solar battery preparation method, it can make full use of simple, low-cost, high yield and supermatic advantage of silk-screen printing technique, can reduce the shading area of solar cell metal electrode again effectively, improve its photoelectric conversion efficiency.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: it is made up of many semiconductor assistant grids 1 and a few strip metal electrode main grid line 2, and a few strip metal electrode main grid lines interconnect many semiconductor assistant grids 1; Its preparation method may further comprise the steps: one, silicon chip surface texturing, two, silk screen printing phosphorus slurry fine rule, three, High temperature diffusion obtains thin grid line and other suitable emitter region of square resistance of low square resistance, four, remove periphery or back side PN junction, five, remove phosphorosilicate glass, six, the coated with antireflection film, seven, silk screen printing backplate and back side aluminum slurry and oven dry, eight, silk screen printing front side silver paste material main grid line, nine, the electrode co-sintering.
The square resistance of described many semiconductor assistant grids 1 is less than 10 ohm, and line thickness is between 10-150 μ m, and the bar number can be adjusted as required, and the bar number in every centimetre length is generally between the 2-50 bar.It preferentially adopts, and silk screen printing goes out high concentration phosphorus slurry grid line pattern on P type silicon chip surface, carry out elevated temperature heat diffusion then and obtain, but be not limited to the method, can also adopt silk screen printing high concentration phosphorus slurry on whole P type silicon chip front surface earlier, adopt laser selective heating silicon chip surface then and obtain, perhaps adopt the heating of mask thermal light source selectivity and obtain.It is the hachure zone that silicon chip surface forms because of heavy doping, these hachure zones have compares the much lower square resistance in other zone of silicon chip surface, can be used for collecting and the conduction photogenerated current, metal electrode main grid line then interconnects these semiconductor assistant grids.
Described silicon chip surface texturing is meant that the method for dry etchings such as wet etchings such as adopting acid, alkali or plasma etching, reactive ion etching erodes away small pyramid or bowl configurations at silicon chip surface, to increase the roughness of silicon chip surface, reduce the light emission of silicon chip surface.
Described removal periphery or back side PN junction are meant that the method for dry etchings such as wet etchings such as adopting acid, alkali or plasma etching, reactive ion etching get rid of at the PN junction at the silicon chips periphery or the back side in will spreading.
Described coated with antireflection film is meant that using plasma strengthens the method for chemical vapour deposition (CVD) (PECVD) at silicon chip surface deposited silicon nitride antireflective coating, the method that perhaps adopts high-temperature thermal oxidation earlier is at silicon chip surface growth layer of silicon dioxide film, and then the method that adopts aumospheric pressure cvd (APCVD) deposition of titanium oxide thin layer on silicon dioxide layer again, or the layer of silicon dioxide thin layer adds the last layer silicon nitride film layer, thin layer that can also the 3rd layer of other material of regrowth (as magnesium fluoride etc.).
The present invention compares conventional silk screen printing all-metal grid crystal-silicon solar cell, because most metal electrode is replaced by grid electrode of semiconductor, again because the high concentration phosphorus slurry has better permeability than existing argent electrode slurry, can on silicon chip surface, print out more meticulous phosphorus slurry grid line, so reduced the shading area of metal electrode effectively, improve the photoelectric conversion efficiency of solar cell, and can reduce the use amount of argent electrode slurry, reduce the cost of material of metal electrode.In addition, this solar cell adopts the method for silk screen printing to prepare, and the technology with silk screen printing is simple, low-cost, high yield and supermatic advantage.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Embodiment:
Referring to Fig. 1, this embodiment is by the following technical solutions: it is made up of many semiconductor assistant grids 1 and a few strip metal electrode main grid line 2, and a few strip metal electrode main grid lines interconnect many semiconductor assistant grids 1; Its preparation method may further comprise the steps: one, silicon chip surface texturing, two, silk screen printing phosphorus slurry fine rule, three, High temperature diffusion obtains thin grid line and other suitable emitter region of square resistance of low square resistance, four, remove periphery or back side PN junction, five, remove phosphorosilicate glass, six, the coated with antireflection film, seven, silk screen printing backplate and back side aluminum slurry and oven dry, eight, silk screen printing front side silver paste material main grid line, nine, the electrode co-sintering.
The square resistance of described many semiconductor assistant grids 1 is less than 10 ohm, and line thickness is between 10-150 μ m, and the bar number can be adjusted as required, and the bar number in every centimetre length is generally between the 2-50 bar.It preferentially adopts, and silk screen printing goes out high concentration phosphorus slurry grid line pattern on P type silicon chip surface, carry out elevated temperature heat diffusion then and obtain, but be not limited to the method, can also adopt silk screen printing high concentration phosphorus slurry on whole P type silicon chip front surface earlier, adopt laser selective heating silicon chip surface then and obtain, perhaps adopt the heating of mask thermal light source selectivity and obtain.It is the hachure zone that silicon chip surface forms because of heavy doping, these hachure zones have compares the much lower square resistance in other zone of silicon chip surface, can be used for collecting and the conduction photogenerated current, metal electrode main grid line then interconnects these semiconductor assistant grids.
The detailed step that this embodiment adopts is as follows:
One, be that 125mm * 125mm, thickness are about 200 microns p type single crystal silicon sheet and put into the solution that NaOH, sodium metasilicate, isopropyl alcohol and deionized water form and corrode with area, obtain surface unanimity, pyramid matte silicon chip of uniform size, realize the silicon chip surface texturing, light reflectivity to obtain to reduce cleans up silicon chip then.
Two, utilize the method for silk screen printing printing high concentration phosphorus slurry thread pattern on the cleaned silicon chip surface, the width of phosphorus slurry fine rule is approximately 30 microns, and length is about 124 millimeter, and the bar number is 124, and the fine rule spacing is 1.0 millimeters, then oven dry.These phosphorus slurry grid lines can form heavily doped grid electrode of semiconductor at silicon chip surface through after the High temperature diffusion.
Three, the silicon chip that will be printed with high concentration phosphorus slurry grid line is put into diffusion furnace and is carried out High temperature diffusion, and diffusion temperature is 950 ℃, and the time is 2 hours, feeds nitrogen in the diffusion and protects.The square resistance of the thin grid line of heavy doping that the diffusion back obtains is about 5 ohm, the regional square resistance of other of silicon chip surface is about about 80 ohm, these heavily doped thin grid lines promptly are required grid electrode of semiconductor 1, then form required active PN junction district in other zone.
Four, the silicon chip after will spreading is put into the etching machine, utilizes the method for the plasma etching of carbon tetrafluoride and oxygen mixed gas to get rid of the PN junction of silicon chips periphery.
Five, utilize hydrofluoric acid solution that the phosphorosilicate glass that silicon chip surface forms is got rid of.
Six, utilize the method for plasma enhanced chemical vapor deposition (PECVD) at silicon chip surface deposition last layer silicon nitride antireflective and passivating film.
Seven, utilize method two bullion aluminum slurries and oven dry on silicon chip back of the body surface printing of silk screen printing, to use as back electrode.Aluminum slurry and oven dry in other the regional silk screen printing of the silicon chip back side then is so that form aluminium back of the body field, the back side.
Eight, utilize method two also oven dry of silver pastes in the printing of silicon chip front surface of silk screen printing, to use as the positive silver electrode main grid utmost point 2.The line thickness of silver electrode main grid polar curve is 1.5 millimeter, and spacing is 62.5 millimeter, and the secondary grid line of silver electrode main grid line and semiconductor intersects vertically mutually, as shown in drawings.
Nine, the silicon chip that will print positive silver electrode main grid line is put into high temperature sintering furnace and is carried out high temperature sintering, makes metal electrode sizing solidify, and forms alloy and ohmic contact with silicon chip, finally obtains the secondary grid line of semiconductor-master metal grid line single crystal silicon solar cell.
This embodiment has following beneficial effect:
One, it compares conventional silk screen printing all-metal grid crystal-silicon solar cell, because most metal electrode is replaced by grid electrode of semiconductor, so reduced the shading area of metal electrode effectively, improves the photoelectric conversion efficiency of solar cell.Because the high concentration phosphorus slurry has better permeability than existing argent electrode slurry, therefore, more meticulous phosphorus slurry grid line can be on silicon chip surface, printed out, close grid design can be adopted, thereby further reduce the shading area of solar cel electrode, improve its photoelectric conversion efficiency.But also can reduce the use amount of argent electrode slurry, reduce the cost of material of metal electrode.
Two, its adopts the method for silk screen printing to prepare, and compares other preparation methods such as photoetching, plating, laser processing, has that technology is simple, low-cost, high yield and a supermatic advantage.
Claims (9)
1. the secondary canopy utmost point of a semiconductor one master metal canopy crystalline silicon solar battery preparation method, it is characterized in that it is made up of many semiconductor assistant grids (1) and a few strip metal electrode main grid lines (2), wherein these semiconductor assistant grids (1) are the hachure zones that silicon chip surface forms because of heavy doping, and a few strip metal electrode main grid lines (2) interconnect many semiconductor assistant grids 1.
2. the secondary canopy utmost point of a kind of semiconductor according to claim 1 one master metal canopy crystalline silicon solar battery preparation method, the preparation process that it is characterized in that it: one, silicon chip surface texturing, two, silk screen printing phosphorus slurry fine rule, three, High temperature diffusion obtains thin grid line and other suitable emitter region of square resistance of low square resistance, four, remove periphery or back side PN junction, five, remove phosphorosilicate glass, six, coated with antireflection film, seven, silk screen printing backplate and back side aluminum slurry and oven dry, eight, silk screen printing front side silver paste material main grid line, nine, the electrode co-sintering.
3. the secondary canopy utmost point of a kind of semiconductor according to claim 1 one master metal canopy crystalline silicon solar battery preparation method, it is characterized in that described many semiconductor assistant grids (1) adopt preferentially that silk screen printing goes out high concentration phosphorus slurry grid line pattern on P type silicon chip surface, carry out the elevated temperature heat diffusion then and obtain.
4. the secondary canopy utmost point of a kind of semiconductor according to claim 1 one master metal canopy crystalline silicon solar battery preparation method, it is characterized in that described many semiconductor assistant grids (1) can also adopt silk screen printing high concentration phosphorus slurry on whole P type silicon chip front surface earlier, adopt laser selective heating silicon chip surface then and obtain.
5. the secondary canopy utmost point of a kind of semiconductor according to claim 1 one master metal canopy crystalline silicon solar battery preparation method, it is characterized in that described many semiconductor assistant grids (1) line thickness is at 10-150 μ m, the bar number can be adjusted as required, and the bar number in every centimetre length is the 2-50 bar.
6. the secondary canopy utmost point of a kind of semiconductor according to claim 2 one master metal canopy crystalline silicon solar battery preparation method is characterized in that described silicon chip surface texturing is meant that the method for employing acid, alkali wet etching erodes away small bowl configurations at silicon chip surface.
7. the secondary canopy utmost point of a kind of semiconductor according to claim 2 one master metal canopy crystalline silicon solar battery preparation method is characterized in that described removal periphery or back side PN junction are meant that the method for wet etchings such as adopting acid, alkali get rid of at the PN junction at the silicon chips periphery and the back side in will spreading.
8. the secondary canopy utmost point of a kind of semiconductor according to claim 2 one master metal canopy crystalline silicon solar battery preparation method is characterized in that described coated with antireflection film is meant that using plasma strengthens the method for chemical vapour deposition (CVD) at silicon chip surface deposited silicon nitride antireflective coating.
9. the secondary canopy utmost point of a kind of semiconductor according to claim 2 one master metal canopy crystalline silicon solar battery preparation method, it is characterized in that method that described coated with antireflection film can also adopt earlier high-temperature thermal oxidation at silicon chip surface growth layer of silicon dioxide film, and then the method that adopts aumospheric pressure cvd deposition of titanium oxide thin layer on silicon dioxide layer again.
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| CN200910264900A CN101826573A (en) | 2009-12-25 | 2009-12-25 | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976708A (en) * | 2010-09-22 | 2011-02-16 | 中国科学院宁波材料技术与工程研究所 | Method for improving photoelectric conversion efficiency of crystal silicon solar battery |
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN102184974A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode of solar cell |
| CN102306684A (en) * | 2011-09-19 | 2012-01-04 | 刘锋 | Selective emitter with third-stage doping level and preparation method thereof |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN103117311A (en) * | 2013-02-25 | 2013-05-22 | 中国东方电气集团有限公司 | Crystal-silicon solar cell with transparent electrodes |
| CN103252983A (en) * | 2013-05-31 | 2013-08-21 | 中利腾晖光伏科技有限公司 | Grid line printing equipment and method for realizing high-quality fine grid printing by adopting same |
| CN103339737A (en) * | 2011-01-28 | 2013-10-02 | 三洋电机株式会社 | Solar cell and solar cell module |
| CN104040733A (en) * | 2012-01-10 | 2014-09-10 | 夏普株式会社 | Solar cell fabrication method and solar cell |
| WO2014206213A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Solar battery and manufacturing method therefor |
| CN112838133A (en) * | 2020-12-31 | 2021-05-25 | 帝尔激光科技(无锡)有限公司 | Solar cell and preparation method thereof |
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- 2009-12-25 CN CN200910264900A patent/CN101826573A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976708A (en) * | 2010-09-22 | 2011-02-16 | 中国科学院宁波材料技术与工程研究所 | Method for improving photoelectric conversion efficiency of crystal silicon solar battery |
| CN102184974B (en) * | 2010-12-02 | 2013-01-02 | 浚鑫科技股份有限公司 | Positive electrode of solar cell |
| CN102184974A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode of solar cell |
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN103339737A (en) * | 2011-01-28 | 2013-10-02 | 三洋电机株式会社 | Solar cell and solar cell module |
| CN103339737B (en) * | 2011-01-28 | 2016-01-06 | 三洋电机株式会社 | Solar cell and solar module |
| CN102306684B (en) * | 2011-09-19 | 2016-01-20 | 苏州旭环光伏科技有限公司 | Selective emitter of a kind of three grades of doped level and preparation method thereof |
| CN102306684A (en) * | 2011-09-19 | 2012-01-04 | 刘锋 | Selective emitter with third-stage doping level and preparation method thereof |
| CN106129187A (en) * | 2012-01-10 | 2016-11-16 | 夏普株式会社 | The manufacture method of solaode, device and solaode |
| CN104040733A (en) * | 2012-01-10 | 2014-09-10 | 夏普株式会社 | Solar cell fabrication method and solar cell |
| CN102916087B (en) * | 2012-11-09 | 2015-06-17 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN103117311B (en) * | 2013-02-25 | 2016-04-06 | 中国东方电气集团有限公司 | A kind of crystal silicon solar batteries with transparency electrode |
| CN103117311A (en) * | 2013-02-25 | 2013-05-22 | 中国东方电气集团有限公司 | Crystal-silicon solar cell with transparent electrodes |
| CN103252983A (en) * | 2013-05-31 | 2013-08-21 | 中利腾晖光伏科技有限公司 | Grid line printing equipment and method for realizing high-quality fine grid printing by adopting same |
| CN103252983B (en) * | 2013-05-31 | 2016-02-03 | 中利腾晖光伏科技有限公司 | A kind of grid line printing equipment |
| WO2014206213A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Solar battery and manufacturing method therefor |
| CN112838133A (en) * | 2020-12-31 | 2021-05-25 | 帝尔激光科技(无锡)有限公司 | Solar cell and preparation method thereof |
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Open date: 20100908 |