CN110112230A - A kind of preparation method of MWT solar battery - Google Patents
A kind of preparation method of MWT solar battery Download PDFInfo
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- CN110112230A CN110112230A CN201910252758.7A CN201910252758A CN110112230A CN 110112230 A CN110112230 A CN 110112230A CN 201910252758 A CN201910252758 A CN 201910252758A CN 110112230 A CN110112230 A CN 110112230A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 39
- 229940037003 alum Drugs 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- 238000009792 diffusion process Methods 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000007650 screen-printing Methods 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 10
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 10
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910019213 POCl3 Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
- 230000006798 recombination Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
- 238000012546 transfer Methods 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 35
- 238000010586 diagram Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of preparation method of MWT solar battery, and this method proposes a kind of production technology scheme of two-sided MWT+ battery, it is ensured that MWT+ battery basic transfer efficiency and cost advantage；Using MWT+ alum gate line double-side cell technology, angularity problem caused by thin slice is reduced, to reduce battery and device process fragment rate；Meanwhile MWT+ double-side cell technology effectively improves battery conversion efficiency.
Description
Technical field
The present invention relates to silicon solar cell technology fields, and in particular to a kind of preparation of MWT solar battery
Method.
Background technique
It is a kind of high-efficiency battery that metal piercing, which winds silicon solar cell (MWT), is collected front by laser drill
Energy pass through battery transfer to cell backside, achieve the purpose that improve transfer efficiency, patent to reduce shading-area
CN201410016190.6 provides the low cost preparation method of MWT a kind of.Since MWT battery processing procedure and conventional batteries processing procedure remove
It laser boring and requires of both being dielectrically separated from outer again without other differences, MWT battery is allowed to be compatible with black silicon, PERC, HIT
Etc. technologies.Wherein, patent CN201410016190.6 provides a kind of preparation flow of MWT combination PERC technology simultaneously.
How improving cell piece transfer efficiency and reducing cost of manufacture is always photovoltaic industry eternal topic.It is imitated about conversion
Rate is promoted.Localized contact back passivation (PERC) solar battery is a kind of nearest 2 years high performance solar batteries newly developed come out
Technology, has obtained extensive concern in the industry and large-scale promotion is answered.Currently, MWT+PERC has also realized scale of mass production.
Present aspect drops, and 50% or more battery cost comes from silicon wafer cost, and the technologies such as Buddha's warrior attendant wire cutting, thinned silicon wafer are current
Reduce the main means of silicon wafer cost.About slice technique, single, polysilicon chip thickness is unanimously dropped from 320 μm, 270 μm, 230 μm
As low as 180 μm, and to 150 μm or more Bao Fazhan.Due to the advanced component package technology of MWT, it is suitble to the scale of thin slice
Metaplasia produces, and realizes that the reduction of MWT battery cost is a trend by reducing cell piece thickness.But sheet is a handle twolip
Sword, thin slice can reduce the cost, but fragment rate also will increase, this is also to restrict one of the principal element that thin slice is promoted.How to drop
Angularity problem caused by low battery manufacturing procedure fragment and thin slice is a problem to be solved.
How further to be promoted as a result, MWT+ battery be transfer efficiency and reduce processing procedure cost, be push industry development and
Realize the critical issue of cheap internet access.
Summary of the invention
For above-mentioned problem, a kind of scheme of two-sided MWT+ battery technology is proposed, it can be on the basis of cell foil
Angularity problem caused by upper inhibition battery manufacturing procedure fragment and thin slice.
The present invention provide technical solution it is as follows: a kind of preparation method of MWT solar battery, the preparation method include with
Lower step:
Step 1, the substrate using thin silicon wafer as battery, removes the damaging layer of silicon chip surface, is cleaned and knitted to silicon wafer
Structure reduces the recombination rate of photo-generated carrier, while flannelette is made in silicon chip surface to reduce reflectivity；
Diffusion: step 2 deposits doped source in silicon chip substrate and carries out diffusion for PN junction, silicon wafer uses to exist in back-to-back fashion
Single side diffusion is carried out in diffusion furnace；
Step 3, etching: the PN junction at silicon chips periphery and the back side after removal diffusion removes phosphorosilicate glass, and carry out polished backside；
Annealing: step 4 makes annealing treatment silicon wafer after etching；
Step 5, backside passivation layer preparation: using chemical vapor deposition CVD, atomic layer deposition ALD or screen printing mode in silicon
The one layer of alumina layer in the piece back side or two-sided preparation；
Back side antireflective film: step 6 prepares back side silicon nitride silicon protective film using chemical vapor deposition PECVD；
Front protecting film: step 7 prepares front side silicon nitride silicon antireflective film using chemical vapor deposition PECVD；
Step 8, laser slotting: being slotted the alumina passivation layer at the back side and silicon nitride protective layer with laser, so as to aluminium back
Field slurry and silicon substrate form Ohmic contact；
The preparation of the back side MWT anode: step 9 uses routine PERC back silver paste, is preparing MWT rear electrode just in silicon chip back side
Pole；
Step 10, the back side MWT cathode preparation: use MWT plug-hole slurry, silicon chip back side prepare MWT rear electrode cathode and together
Shi Jinhang plug-hole；
Al-BSF preparation: step 11 prepares the alum gate line of corresponding step 8 laser slotting figure in silicon chip back side；
Front gate line electrode: step 12 prepares front gate line electrode in MWT battery piece front；
Sintering: the cell piece cofiring of slurry after printing is formed Ohmic contact by step 13.
It further, include laser boring step in the preparation method, the laser boring step is in step 1, directly
It connects and cell substrate is punched according to specification；
Alternatively, carrying out laser boring step to cell piece, then use laser slotting after step 7 prepares front protecting film.
As a preference, the thin silicon wafer is the solar level p-type monocrystalline or polysilicon chip of 140 μ m thicks.
Further, in step 2, the back-to-back single side of high temperature is carried out using POCl3 diffusion source and is spread.
Further, in the step 3, chemical cleaning is carried out using conventional chemical solution.
Further, the step 4 moves back silicon wafer after etching at a temperature of 600-750 DEG C using normal pressure diffusion furnace
Fire processing.
Further, described Step 9: Step 10: Step 11: step 12, is all made of at screen printing mode
Reason.
As a preference, the hole on cell piece is 6 × 6 array patterns.
As a preference, diffused sheet resistance is controlled in 30-150 Ω in step 2.
The invention has the following beneficial effects:
1. using MWT+ technology, it is ensured that MWT+ battery basic transfer efficiency and cost advantage；
2. using 140 thickness silicon wafers, silicon wafer cost is substantially reduced；
3. using MWT+ alum gate line double-side cell technology, angularity problem caused by thin slice is reduced, to reduce battery and group
Part processing procedure fragment rate；Meanwhile MWT+ double-side cell technology effectively improves battery conversion efficiency.
Detailed description of the invention
Fig. 1 is the schematic diagram of the laser boring of MWT battery；
Fig. 2 is the schematic diagram of MWT double-side cell laser slotting；
Fig. 3 is the schematic diagram of the anode of MWT rear electrode；
Fig. 4 is the schematic diagram of the cathode of MWT rear electrode；
Fig. 5 is the schematic diagram of the alum gate line of MWT rear electrode；
Wherein: 1- silicon wafer, the hole 2-, 3- slot grid line, 4- aluminium main grid, 5- aluminium pair grid, 6- MWT battery anode, 7- MWT battery are negative
Pole.
Specific embodiment
Now technical solution of the present invention is completely described in conjunction with attached drawing.It is described below only of the invention one
Part case study on implementation, and it is not all.Based on the case study on implementation in the present invention, those skilled in the art are not making creation
Property labour under the premise of every other case study on implementation obtained, belong within the scope of the present invention.
As shown in Figures 1 to 5, the present invention provides the preparation method that technical solution is a kind of MWT solar battery, the system
Preparation Method the following steps are included:
Step 1, the substrate using thin silicon wafer 1 as battery remove the damaging layer on 1 surface of silicon wafer, clean to silicon wafer 1
And texturing, the recombination rate of photo-generated carrier is reduced, while flannelette is made on 1 surface of silicon wafer to reduce reflectivity；
Diffusion: step 2 in 1 substrate deposition doped source of silicon wafer and carries out diffusion for PN junction, silicon wafer 1 is using in back-to-back fashion
Single side diffusion is carried out in diffusion furnace；
Step 3, etching: the PN junction at 1 periphery of silicon wafer and the back side after removal diffusion removes phosphorosilicate glass, and carry out polished backside；
Annealing: step 4 makes annealing treatment silicon wafer 1 after etching；
Step 5, backside passivation layer preparation: using chemical vapor deposition CVD, atomic layer deposition ALD or screen printing mode in silicon
The one layer of alumina layer in 1 back side of piece or two-sided preparation；
Back side antireflective film: step 6 prepares back side silicon nitride silicon protective film using chemical vapor deposition PECVD；
Front protecting film: step 7 prepares front side silicon nitride silicon antireflective film using chemical vapor deposition PECVD；
Step 8, laser slotting: being slotted the alumina passivation layer at the back side and silicon nitride protective layer with laser, so as to aluminium back
Field slurry and silicon substrate form Ohmic contact；
Prepared by step 9, the back side MWT anode 6: using routine PERC back silver paste, prepare MWT rear electrode at 1 back side of silicon wafer
Anode 6；
Prepared by step 10, the back side MWT cathode 7: using 2 slurry of MWT plug-hole, prepare the cathode 7 of MWT rear electrode at 1 back side of silicon wafer
With carry out plug-hole 2 simultaneously；
Al-BSF preparation: step 11 prepares the alum gate line of corresponding step 8 laser slotting figure at 1 back side of silicon wafer；
Front gate line electrode: step 12 prepares front gate line electrode in MWT battery piece front；
Sintering: the cell piece cofiring of slurry after printing is formed Ohmic contact by step 13.
Wherein, 2 process of laser boring can become according to the process flow of MWT+PERC, this technical solution is to this without special
It is required that.
Embodiment 1:
1. silicon wafer 1: being used as substrate using the solar level p-type monocrystalline or polysilicon chip 1 of 140 μ m thicks；
2. laser boring 2: by silicon wafer 1 by 6 × 6 array patterns as shown in Figure 1, being swashed accordingly on cell piece using laser
2 hole of unthreaded hole.
3. making herbs into wool: carrying out cleaning and texturing using conventional chemical cleaning and texturing method；
4. diffusion: carrying out the back-to-back single side of high temperature using POCl3 diffusion source and spread, diffused sheet resistance is controlled in 30-150 Ω；
5. etching: being cleaned after carrying out chemistry using conventional chemical solution, remove periphery and back side PN junction, silicon serves as a contrast after removal diffusion
The phosphorosilicate glass that bottom surface is formed, and carry out polished backside；
6. annealing: using conventional atmospheric diffusion furnace, made annealing treatment at a temperature of 600-750 DEG C to silicon wafer 1 after etching.
7. prepared by backside passivation layer: plating one layer of 5-50nm thickness at the cell piece back side using chemical vapor deposition (CVD)
AlOx passivating film；
8. back protection film: using PECVD device preparation refractive index between 1.9-2.3, silicon nitride of the film thickness in 80-160nm
Protective film；
9. front antireflective film: using PECVD device preparation refractive index between 1.9-2.2, silicon nitride of the film thickness in 60-100nm
Antireflective film；
10. laser slotting: the aluminium oxide at the back side and silicon nitride protective film being slotted with laser, laser as shown in Figure 2 is prepared and opens
Groove pattern；
11. prepared by the back side MWT anode 6: using modes such as silk-screen printings, conventional PERC back silver paste is prepared at 1 back side of silicon wafer
The anode 6 of MWT rear electrode, as shown in Figure 3；
12. prepared by the back side MWT cathode 7: using modes such as silk-screen printings, dedicated 2 slurry of plug-hole of MWT is prepared at 1 back side of silicon wafer
The cathode 7 of MWT rear electrode as shown in Figure 4 and carry out plug-hole 2 simultaneously；Cathode 7 is round or polygon, and diameter is in 1-2mm
It does not wait and is greater than mask pattern size.
13. Al-BSF is printed: using screen printing mode, prepare Al-BSF as shown in Figure 5 at 1 back side of silicon wafer.
14. front gate line electrode: screen printing mode is used, in MWT battery front, printing MWT battery front gate line electricity
Pole structure.
15. sintering: the cell piece cofiring of slurry after printing is formed Ohmic contact.
Embodiment 2:
1. silicon wafer 1: being used as substrate using the solar level p-type monocrystalline or polysilicon chip 1 of 140 μ m thicks；
2. making herbs into wool: carrying out cleaning and texturing using conventional chemical cleaning and texturing method；
3. diffusion: carrying out the back-to-back single side of high temperature using POCl3 diffusion source and spread, diffused sheet resistance is controlled in 30-150 Ω；
4. etching: being cleaned after carrying out chemistry using conventional chemical solution, remove periphery and back side PN junction, silicon substrate after removal diffusion
The phosphorosilicate glass that surface is formed, and carry out polished backside；
5. annealing: using conventional atmospheric diffusion furnace, made annealing treatment at a temperature of 600-750 DEG C to silicon wafer 1 after etching.
6. prepared by backside passivation layer: plating one layer of 5-50nm thickness at the cell piece back side using chemical vapor deposition (CVD)
AlOx passivating film；
7. back protection film: using PECVD device preparation refractive index between 1.9-2.3, silicon nitride of the film thickness in 80-160nm
Protective film；
8. front antireflective film: using PECVD device preparation refractive index between 1.9-2.2, silicon nitride of the film thickness in 60-100nm
Antireflective film；
9. laser boring 2: by silicon wafer 1 by 6 × 6 array patterns as shown in Figure 1, being swashed accordingly on cell piece using laser
2 hole of unthreaded hole.
10. laser slotting: the aluminium oxide at the back side and silicon nitride protective film being slotted with laser, prepares and as shown in Figure 2 swashs
Light grooved pattern；
11. prepared by the back side MWT anode 6: using modes such as silk-screen printings, conventional PERC back silver paste is prepared at 1 back side of silicon wafer
The anode 6 of MWT rear electrode, as shown in Figure 3；
12. prepared by the back side MWT cathode 7: using modes such as silk-screen printings, dedicated 2 slurry of plug-hole of MWT is prepared at 1 back side of silicon wafer
The cathode 7 of MWT rear electrode as shown in Figure 4 and carry out plug-hole 2 simultaneously；Cathode 7 is round or polygon, and diameter is in 1-2mm
It does not wait and is greater than mask pattern size.
13. Al-BSF is printed: using screen printing mode, prepare Al-BSF as shown in Figure 5 at 1 back side of silicon wafer.
14. front gate line electrode: screen printing mode is used, in MWT battery front, printing MWT battery front gate line electricity
Pole structure.
15. sintering: the cell piece cofiring of slurry after printing is formed Ohmic contact.
Above embodiments are used for illustrative purposes only, rather than limitation of the present invention, the technology people in relation to technical field
Member, without departing from the spirit and scope of the present invention, made various transformation or modification belong to model of the invention
Farmland.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention is not departing from the front lower of spirit and scope of the invention, and various changes and improvements may be made to the invention, and the present invention wants
Protection scope is asked to be delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (9)
1. a kind of preparation method of MWT solar battery, which is characterized in that the preparation method comprises the following steps:
Step 1, the substrate using thin silicon wafer as battery, removes the damaging layer of silicon chip surface, is cleaned and knitted to silicon wafer
Structure reduces the recombination rate of photo-generated carrier, while flannelette is made in silicon chip surface to reduce reflectivity；
Diffusion: step 2 deposits doped source in silicon chip substrate and carries out diffusion for PN junction, silicon wafer uses to exist in back-to-back fashion
Single side diffusion is carried out in diffusion furnace；
Step 3, etching: the PN junction at silicon chips periphery and the back side after removal diffusion removes phosphorosilicate glass, and carry out polished backside；
Annealing: step 4 makes annealing treatment silicon wafer after etching；
Step 5, backside passivation layer preparation: using chemical vapor deposition CVD, atomic layer deposition ALD or screen printing mode in silicon
The one layer of alumina layer in the piece back side or two-sided preparation；
Back side antireflective film: step 6 prepares back side silicon nitride silicon protective film using chemical vapor deposition PECVD；
Front protecting film: step 7 prepares front side silicon nitride silicon antireflective film using chemical vapor deposition PECVD；
Step 8, laser slotting: being slotted the alumina passivation layer at the back side and silicon nitride protective layer with laser, so as to aluminium back
Field slurry and silicon substrate form Ohmic contact；
The preparation of the back side MWT anode: step 9 uses routine PERC back silver paste, is preparing MWT rear electrode just in silicon chip back side
Pole；
Step 10, the back side MWT cathode preparation: use MWT plug-hole slurry, silicon chip back side prepare MWT rear electrode cathode and together
Shi Jinhang plug-hole；
Al-BSF preparation: step 11 prepares the alum gate line of corresponding step 8 laser slotting figure in silicon chip back side；
Front gate line electrode: step 12 prepares front gate line electrode in MWT battery piece front；
Sintering: the cell piece cofiring of slurry after printing is formed Ohmic contact by step 13.
2. a kind of preparation method of MWT solar battery according to claim 1, which is characterized in that the preparation method
In include laser boring step, the laser boring step directly punches cell substrate according to specification in step 1；
Alternatively, carrying out laser boring step to cell piece, then use laser slotting after step 7 prepares front protecting film.
3. a kind of preparation method of MWT solar battery according to claim 2, which is characterized in that the thin silicon wafer
For the solar level p-type monocrystalline or polysilicon chip of 140 μ m thicks.
4. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that in step 2, use
POCl3 spreads source and carries out the back-to-back single side diffusion of high temperature.
5. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that in the step 3,
Chemical cleaning is carried out using conventional chemical solution.
6. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that the step 4 is adopted
With normal pressure diffusion furnace, silicon wafer after etching is made annealing treatment at a temperature of 600-750 DEG C.
7. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that described Step 9: step
Rapid ten, Step 11: step 12, is all made of screen printing mode and is handled.
8. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that the hole on cell piece
For 6 × 6 array patterns.
9. a kind of preparation method of MWT solar battery according to claim 3, which is characterized in that in step 2, diffusion
Sheet resistance is controlled in 30-150 Ω.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211179A (en) * | 2019-10-30 | 2020-05-29 | 横店集团东磁股份有限公司 | MWT solar cell back electric field structure and manufacturing method thereof |
| CN111245366A (en) * | 2020-01-09 | 2020-06-05 | 徐州谷阳新能源科技有限公司 | PSG adjusting and testing method for improving steady state of MWT solar cell |
| CN113066875A (en) * | 2019-12-16 | 2021-07-02 | 苏州阿特斯阳光电力科技有限公司 | Double-sided solar cell and photovoltaic module |
| CN114005909A (en) * | 2021-12-31 | 2022-02-01 | 南京日托光伏新能源有限公司 | Manufacturing and packaging method of MWT (Metal wrap through) assembly for increasing light secondary absorption |
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| WO2014144897A1 (en) * | 2013-03-15 | 2014-09-18 | Solar Junction Corporation | Multi-junction solar cells with through-substrate vias |
| US20150280022A1 (en) * | 2014-03-28 | 2015-10-01 | International Business Machines Corporation | Surface preparation and uniform plating on through wafer vias and interconnects for photovoltaics |
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| CN113066875A (en) * | 2019-12-16 | 2021-07-02 | 苏州阿特斯阳光电力科技有限公司 | Double-sided solar cell and photovoltaic module |
| CN111245366A (en) * | 2020-01-09 | 2020-06-05 | 徐州谷阳新能源科技有限公司 | PSG adjusting and testing method for improving steady state of MWT solar cell |
| CN111245366B (en) * | 2020-01-09 | 2021-05-18 | 徐州谷阳新能源科技有限公司 | PSG adjusting and testing method for improving steady state of MWT solar cell |
| CN114005909A (en) * | 2021-12-31 | 2022-02-01 | 南京日托光伏新能源有限公司 | Manufacturing and packaging method of MWT (Metal wrap through) assembly for increasing light secondary absorption |
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