CN110534614A - A kind of preparation method of P-type crystal silicon battery - Google Patents
A kind of preparation method of P-type crystal silicon battery Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 126
- 239000010703 silicon Substances 0.000 title claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 239000013078 crystal Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000243 solution Substances 0.000 claims abstract description 80
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 33
- 239000011574 phosphorus Substances 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 27
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 18
- 235000008216 herbs Nutrition 0.000 claims abstract description 15
- 210000002268 wool Anatomy 0.000 claims abstract description 15
- 239000012670 alkaline solution Substances 0.000 claims abstract description 13
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 3
- 238000005498 polishing Methods 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims description 2
- 244000046052 Phaseolus vulgaris Species 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 235000013312 flour Nutrition 0.000 claims description 2
- 235000012149 noodles Nutrition 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 21
- 229910004205 SiNX Inorganic materials 0.000 description 12
- 230000035484 reaction time Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910017107 AlOx Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 229910019213 POCl3 Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of preparation methods of P-type crystal silicon battery, solve the electrical leakage problems of P-type crystal silicon back side carrier selective structure battery.It in turn includes the following steps: A, carrying out back-etching or polishing to the P-type crystal silicon wafer after making herbs into wool；B, thin oxide layer is grown at the back side of P-type crystal silicon wafer；C, the deposit polycrystalline silicon layer in thin oxide layer, and adulterate group-III element；D, the group-III element doping of P-type crystal silicon on piece is faced upward, is put into the first solution and is handled in a manner of floating, first solution includes HF, HNO3、H2SO4, NaOH, KOH, TMAH, at least one of ammonium hydroxide；E, the front through the first solution treated P-type crystal silicon wafer is subjected to phosphorus doping；F, the phosphorus doping of P-type crystal silicon wafer is faced upward, is put into the second solution and is handled in a manner of floating, second solution includes HF, HNO3、H2SO4At least one of；It G, will treated that P-type crystal silicon wafer is put into alkaline solution handles through the second solution.
Description
Technical field
The invention belongs to area of solar cell, are related to a kind of preparation method of P-type crystal silicon battery.
Background technique
Conventional fossil fuel is increasingly depleted, and in all sustainable energies, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.Currently, silicon solar cell is to obtain greatly in all solar batteries
One of the solar battery that commerce is promoted, this is because silicon materials have reserves extremely abundant, while silicon in the earth's crust
Solar battery compares other kinds of solar battery, there is excellent electric property and mechanical performance, silicon solar cell
It is occupied an important position in photovoltaic art.Therefore, the silicon solar cell for researching and developing high performance-price ratio has become various countries' photovoltaic enterprise
The main direction of studying of industry.
Mainly based on single side solar cell, i.e. the front of only battery can be absorbed too existing crystal-silicon solar cell
Sunlight simultaneously carries out photoelectric conversion.Sunlight also reaches the back side of cell piece by the modes such as reflecting and scattering in fact.But it is traditional single
The back side of faceted crystal silicon cell is covered by metallic aluminium, and the sunlight for reaching the cell piece back side can not penetrate arrival silicon substrate,
Therefore the sunlight for reaching the cell piece back side can not be efficiently absorbed.In order to further increase suction of the crystal silicon cell to sunlight
It receives, photovoltaic industry gradually starts to develop the crystal-silicon solar cell of two-sided all absorbable sunlight, and commonly referred to as crystalline silicon is two-sided
Solar cell.
Existing P-type crystal silicon double-side cell is main are as follows: traditional back side all standing aluminium layer is optimized for the back side and is locally covered
The aluminium layer of lid allows the sunlight for reaching cell backside by not absorbed by the region that aluminium layer covers by silicon substrate, generates light
Raw carrier, increases the photoelectric conversion capacity of crystal-silicon solar cell.
However, P-type crystal silicon cell backside forms metallized Ohmic contact using aluminium and silicon substrate, in connecing for alusil alloy
Touching region, there are higher Carrier recombinations.This higher Carrier recombination limits crystal-silicon solar cell photoelectric conversion effect
The further promotion of rate.In order to continue to improve the photoelectric conversion efficiency of crystal-silicon solar cell, carrier can be used and selectively tie
Structure reduces the Carrier recombination in P-type crystal silicon double-side cell back metal region.
But when P-type crystal silicon cell backside prepares carrier selective structure, ineffective doping in situ or thermal expansion
Doping is dissipated, doped chemical all can make the positive and negative of battery during doping around undoped face (usually p-doped face) is mapped to
Pole is directly linked together in the case where nonisulated, so as to cause electric leakage.Meanwhile it can also make phosphorus with the mode p-doped of thermal diffusion
Around non-phosphorus doping face is mapped to, it is directly linked together the anode of battery and cathode in the case where nonisulated, so as to cause leakage
Electricity.
Summary of the invention
In view of the above technical problems, the present invention is intended to provide a kind of preparation method of P-type crystal silicon battery, solves p-type
The electrical leakage problems of crystalline silicon back side carrier selective structure battery.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of preparation method of P-type crystal silicon battery, in turn includes the following steps:
A, back-etching or polishing are carried out to the P-type crystal silicon wafer after making herbs into wool, retains positive flannelette；
B, thin oxide layer is grown at the back side of P-type crystal silicon wafer；
C, the deposit polycrystalline silicon layer in thin oxide layer, and adulterate group-III element；
D, the group-III element doping of P-type crystal silicon on piece is faced upward, is put into a manner of floating in the first solution
Reason, first solution includes HF, HNO3、H2SO4, NaOH, KOH, TMAH, at least one of ammonium hydroxide；
E, the front through the first solution treated P-type crystal silicon wafer is subjected to phosphorus doping；
F, the phosphorus doping of P-type crystal silicon wafer is faced upward, is put into the second solution and is handled in a manner of floating, described second
Solution includes HF, HNO3、H2SO4At least one of；
It G, will treated that P-type crystal silicon wafer is put into alkaline solution handles through the second solution；
H, by the surface through alkaline solution treated P-type crystal silicon wafer phosphorosilicate glass and III group silica glass remove；
I, by the surface oxidation of P-type crystal silicon wafer；
J, in the III group diffusingsurface deposit passivation layer and antireflection layer of P-type crystal silicon on piece, anti-reflection is deposited in phosphorus diffusion face
Penetrate layer；
K, it carries out metallization process and forms front metal electrode and back metal electrode.
Preferably, in the step D, first P-type crystal silicon on piece group-III element doping face formed moisture film, then with
The mode of floating is put into the first solution and handles；In the step F, moisture film first is formed in the phosphorus doping face of P-type crystal silicon wafer, so
The mode floated afterwards is put into the second solution and handles.
In a preferred embodiment, the step D specific implementation is as follows: mixing in the group-III element of P-type crystal silicon on piece
Beans flour noodle formed moisture film, using chain type transmitting device transmit P-type crystal silicon wafer, make P-type crystal silicon wafer group-III element adulterate towards
Above and in a manner of floating pass through the first solution.Specifically, moisture film is formed by spray.
It is highly preferred that the solution that first solution is HF and deionized water is constituted, HF volumetric concentration is 3~7%, described
The transmission speed of chain type transmitting device is 1.8~2.2m/s.
In a preferred embodiment, the step F specific implementation is as follows: being formed in the phosphorus doping face of P-type crystal silicon wafer
Moisture film transmits P-type crystal silicon wafer using chain type transmitting device, makes the phosphorus doping of P-type crystal silicon wafer upwardly and with the side of floating
Formula passes through the second solution.Specifically, moisture film is formed by spray.
It is highly preferred that the solution that second solution is HF and deionized water is constituted, HF volumetric concentration is 3~7%, described
The transmission speed of chain type transmitting device is 1.6~2.0m/s.
Preferably, the alkaline solution in the step G is NaOH, KOH, TMAH or NH4OH solution.It is highly preferred that described
Alkaline solution in step G is the KOH solution that volumetric concentration is 2~5%, and the processing time is 400~800s.Pass through alkaline solution
With pasc reaction, the doped layer of silicon chip edge is removed, prevents from leaking electricity.
Preferably, the thin oxide layer in the step B is thin layer of silicon oxide.
Preferably, in the step C, III group is adulterated during deposit polycrystalline silicon layer or after deposit polycrystalline silicon layer
Element.
Preferably, in the step H, P-type crystal silicon wafer is put into HF solution, remove surface on phosphorosilicate glass and
III group silica glass.
Preferably, the step I specific implementation is as follows: P-type crystal silicon wafer being aoxidized, then removes the oxidation on surface
Object, then by the surface oxidation of P-type crystal silicon wafer.
It is highly preferred that first passing through ozone solution or HNO in the step I3Solution is by P-type crystal silicon chip, then places
The oxide layer that surface is removed in HF solution, then again by ozone solution or HNO3Solution is by the surface of P-type crystal silicon wafer
It is aoxidized.
Preferably, in the step J, alumina layer and nitridation are sequentially depositing in the III group diffusingsurface of P-type crystal silicon on piece
Silicon layer, the deposited silicon nitride layer on the phosphorus diffusion face of P-type crystal silicon on piece.
One specifically and in preferred embodiment, the preparation method in turn includes the following steps:
(1) P-type crystal silicon wafer is subjected to making herbs into wool (surface forms pyramid flannelette)；
(2) P-type wafer after making herbs into wool, carries out back-etching or polishing process, and front retains pyramid face；
(3) SiOx thin layer is grown at the back side of P-type wafer；
(4) in the backside deposition Polysilicon polysilicon layer of P-type wafer；
(5) III race's element is adulterated in situ during Polysilicon polysilicon layer, or more in Polysilicon
III race's element is adulterated after crystal silicon layer depositing operation；
Silicon wafer after (6) III race's element dopings forms moisture film in III race's element doping face, is transmitted with chain type, doping faces upward
By the first solution in a manner of floating, wherein the first solution may include HF, HNO3、H2SO4, NaOH, KOH, TMAH and ammonia
Water；
(7) phosphorus doping is carried out in the front of P-type crystal silicon；
(8) silicon wafer after phosphorus doping forms moisture film in phosphorus doping face, is transmitted with chain type, phosphorus doping is upwardly with the side of floating
Formula is by the second solution, wherein the second solution may include HF, HNO3And H2SO4；
(9) silicon wafer is placed in alkaline solution, by alkaline solution and pasc reaction, removes the doped layer of silicon chip edge,
It prevents from leaking electricity, alkaline solution may include NaOH, KOH, TMAH or NH4OH etc. and deionized water；
(10) silicon wafer is placed in HF and deionized water mixed solution, removes the phosphorosilicate glass and III race's silica glass on surface；
(11) silicon wafer is aoxidized, oxidation process can pass through ozone solution or HNO3Solution is realized；
(12) silicon wafer is placed in HF and deionization mixed solution, removes the oxide layer on surface；
(13) silicon chip surface is aoxidized, oxidation process can pass through ozone solution or HNO3Solution is realized；
(14) in III race's diffusingsurface aluminum oxide layer of silicon wafer；
(15) SiNx layer is deposited respectively in III race's diffusingsurface of silicon wafer and phosphorus diffusion face；
(16) metallization process is carried out in silicon chip surface.
The present invention uses above scheme, has the advantages that compared with prior art
P-type crystal silicon battery preparation method of the invention, can be in III race's elements diffusion of effective protection P-type crystal silicon battery
On the basis of face and phosphorus diffusion face, the edge current leakage of battery is solved the problems, such as, significantly reduce the backward voltage leakage of P-type crystal silicon battery
Electricity；Preparation method is simple, is suitable for popularization and application.
Detailed description of the invention
It, below will be to attached drawing needed in embodiment description in order to illustrate more clearly of technical solution of the present invention
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of P-type crystal silicon battery made from embodiment 1.
Wherein, 1, front metal electrode；2, SiNx layer；3, phosphorus doping layer；4, P-type crystal silicon matrix；5, SiOx layers；6,
Polysilicon polysilicon layer；7, AlOx layer；8, SiNx layer；9, back metal electrode.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.It should be noted that the explanation for these embodiments is used to help
Understand the present invention, but and does not constitute a limitation of the invention.In addition, involved in the various embodiments of the present invention described below
And to technical characteristic can be combined with each other as long as they do not conflict with each other.
Embodiment 1
Fig. 1 show a kind of P-type crystal silicon battery made from the present embodiment, including front metal electrode 1, SiNx layer 2, phosphorus
Doped layer 3, P-type silicon base layer 4, SiOx layer 5, Polysilicon polysilicon layer 6, AlOx layer 7, SiNx layer 8 and back metal electricity
Pole 9, wherein SiNx2 layers, phosphorus doping layer 3, P-type silicon base layer 4, SiOx layer 5, Polysilicon polysilicon layer 6, AlOx7 layers and
SiNx layer 8 stacks gradually from top to bottom, and front metal electrode 1 passes through SiNx layer 2 and forms Ohmic contact with phosphorus doping layer 3, back
Face metal electrode 9 pass through SiNx layer 8, AlOx layer 7 and with Polysilicon polysilicon layer 6 formed Ohmic contact.
P-type crystal silicon battery as shown in Figure 1 is prepared using following steps, is prepared one group of p type single crystal silicon piece (50) and is done
Following processing:
(1) P-type crystal silicon wafer is subjected to making herbs into wool, silicon chip surface forms pyramid flannelette, and making herbs into wool solution uses KOH, making herbs into wool
The mixed solution of additive and deionized water, the volumetric concentration of KOH are 3%, the making herbs into wool time 800 seconds；
(2) the P-type crystal silicon wafer after making herbs into wool forms moisture film in its single side, is transmitted with chain type, and moisture film faces upward, with floating
Mode pass through HF, HNO3、H2SO4With the mixed solution of deionized water, wherein HF solution 30L, HNO3Solution 230L, H2SO4It is molten
Liquid 60L, deionized water 200L, transmit belt speed 2m/s by 16 DEG C of solution temperature；
(3) SiOx thin layer is grown at the P-type wafer back side using LPCVD；
(4) using LPCVD in P-type wafer backside deposition Polysilicon polysilicon layer；
(5) P-type wafer back side Polysilicon polysilicon layer is doped using boron diffuser, doped source is to carry
The N of BBR32, wherein taking the N of BBR32Flow 150sccm does not take source nitrogen flow 30SLM, oxygen flow 600sccm, TongYuan
Time 25min, 900 DEG C of temperature；
(6) Chained cleaning machine is utilized, moisture film is formed in boron doping face, passes through the mixed of HF and deionized water in a manner of floating
Close solution, HF volumetric concentration 5%, transmission speed 2m/s；
(7) P-type wafer front is doped using phosphorus diffusion pipe, doped source is to carry POCl3N2, wherein taking POCl3
N2Flow 100sccm, does not take source nitrogen flow 5SLM, oxygen flow 600sccm, TongYuan time 30min, and 880 DEG C of temperature；
(8) Chained cleaning machine is utilized, moisture film is formed in phosphorus doping face, passes through the mixed of HF and deionized water in a manner of floating
Close solution, HF volume solubility 5%, transmission speed 1.8m/s；
(9) silicon wafer is placed in KOH alkaline solution, KOH volumetric concentration 3%, the reaction time 600 seconds；
(10) silicon wafer is placed in HF solution, HF solution concentration 5%, the reaction time 300 seconds；
(11) silicon wafer is placed on HNO3In solution, HNO3Solution concentration 67%, the reaction time 300 seconds；
(12) silicon wafer is placed in HF solution, HF solution concentration 5%, the reaction time 300 seconds；
(13) silicon wafer is placed on HNO3In solution, HNO3Solution concentration 67%, the reaction time 300 seconds；
(14) AlOx layer, AlOx layer thickness 6nm are deposited in the boron doping face of silicon wafer using atomic layer deposition method (ALD)；
(15) SiNx layer, SiNx layer thickness 90nm, refractive index 2.05 are deposited respectively at the back side of silicon wafer and front；
(16) silver-colored aluminium paste is printed in the boron diffusingsurface of silicon wafer, carries out stoving process, 300 DEG C of drying temperature；
(17) silver paste is printed in the phosphorus diffusion face of silicon wafer, is sintered technique, be sintered 900 DEG C of maximum temperature.
Comparative example 1
P-type crystal silicon battery as shown in Figure 1 is prepared using following steps, is prepared one group of p type single crystal silicon piece (50) and is done
Following processing:
(1) P-type crystal silicon wafer is subjected to making herbs into wool, silicon chip surface forms pyramid flannelette, and making herbs into wool solution uses KOH, making herbs into wool
The mixed solution of additive and deionized water, the volumetric concentration of KOH are 3%, the making herbs into wool time 800 seconds；
(2) P-type wafer after making herbs into wool, single side form moisture film, are transmitted with chain type, and moisture film faces upward, and are led in a manner of floating
Cross HF, HNO3、H2SO4With the mixed solution of deionized water, wherein HF solution 30L, HNO3Solution 230L, H2SO4Solution 60L, goes
Ionized water 200L, transmits belt speed 2m/s by 16 DEG C of solution temperature；
(3) SiOx thin layer is grown at the P-type wafer back side using LPCVD；
(4) using LPCVD in P-type wafer backside deposition Polysilicon polysilicon layer；
(5) P-type wafer back side Polysilicon polysilicon layer is doped using boron diffuser, doped source is to carry
The N of BBR32, wherein taking the N of BBR32Flow 150sccm does not take source nitrogen flow 30SLM, oxygen flow 600sccm, TongYuan
Time 25min, 900 DEG C of temperature；
(6) P-type wafer front is doped using phosphorus diffusion pipe, doped source is to carry POCl3N2, wherein taking POCl3
N2Flow 100sccm, does not take source nitrogen flow 5SLM, oxygen flow 600sccm, TongYuan time 30min, and 880 DEG C of temperature；
(7) silicon wafer is placed in HF solution, HF solution concentration 5%, the reaction time 300 seconds；
(8) silicon wafer is placed on HNO3In solution, HNO3Solution concentration 67%, the reaction time 300 seconds；
(9) silicon wafer is placed in HF solution, HF solution concentration 5%, the reaction time 300 seconds；
(10) silicon wafer is placed on HNO3In solution, HNO3Solution concentration 67%, the reaction time 300 seconds；
(11) AlOx layer, AlOx layer thickness 6nm are deposited in the boron doping face of silicon wafer using atomic layer deposition method (ALD)；
(12) SiNx layer, SiNx layer thickness 90nm, refractive index 2.05 are deposited respectively at the back side of silicon wafer and front；
(13) silver-colored aluminium paste is printed in the boron diffusingsurface of silicon wafer, carries out stoving process, 300 DEG C of drying temperature；
(14) silver paste is printed in the phosphorus diffusion face of silicon wafer, is sintered technique, be sintered 900 DEG C of maximum temperature.
After the completion of battery preparation, 5 are respectively randomly selected from the cell piece that embodiment 1 and comparative example 1 obtain, utilizes battery
IV tester tests the electric leakage of two groups of cell pieces, and obtained leakage tests data difference is as shown in Table 1 and Table 2.
The leakage tests data of the cell piece of 1 embodiment 1 of table
The leakage tests data of the cell piece of 2 comparative example 1 of table
| Cell piece number | The electric leakage of 12V backward voltage |
| 6 | 10A |
| 18 | 9.9A |
| 26 | 9.6A |
| 36 | 10A |
| 45 | 10A |
As can be seen from Table 1 and Table 2, cell piece made from the preparation method of embodiment 1 12V backward voltage electric leakage compared with
It is small, it solves electrical leakage problems, significantly reduces the backward voltage electric leakage of P-type crystal silicon battery.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
It cans understand the content of the present invention and implement it accordingly in person skilled in the art, protection of the invention can not be limited with this
Range.Equivalent transformation or modification made by all principles according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of P-type crystal silicon battery, which is characterized in that in turn include the following steps:
A, back-etching or polishing are carried out to the P-type crystal silicon wafer after making herbs into wool, retains positive flannelette；
B, thin oxide layer is grown at the back side of P-type crystal silicon wafer；
C, the deposit polycrystalline silicon layer in thin oxide layer, and adulterate group-III element；
D, the group-III element doping of P-type crystal silicon on piece is faced upward, is put into the first solution and is handled in a manner of floating, institute
Stating the first solution includes HF, HNO3、H2SO4, NaOH, KOH, TMAH, at least one of ammonium hydroxide；
E, the front through the first solution treated P-type crystal silicon wafer is subjected to phosphorus doping；
F, the phosphorus doping of P-type crystal silicon wafer is faced upward, is put into the second solution and is handled in a manner of floating, second solution
Including HF, HNO3、H2SO4At least one of；
It G, will treated that P-type crystal silicon wafer is put into alkaline solution handles through the second solution；
H, by the surface through alkaline solution treated P-type crystal silicon wafer phosphorosilicate glass and III group silica glass remove；
I, by the surface oxidation of P-type crystal silicon wafer；
J, in the III group diffusingsurface deposit passivation layer and antireflection layer of P-type crystal silicon on piece, antireflective is deposited in phosphorus diffusion face
Layer；
K, it carries out metallization process and forms front metal electrode and back metal electrode.
2. preparation method according to claim 1, which is characterized in that in the step D, first in P-type crystal silicon on piece
Group-III element adulterates face and forms moisture film, is then put into the first solution and is handled in a manner of floating；In the step F, first in P
The phosphorus doping face of type crystal silicon chip forms moisture film, and the mode then floated is put into the second solution and handles.
3. preparation method according to claim 1 or 2, which is characterized in that the step D specific implementation is as follows: in p-type crystalline substance
Group-III element doping face on body silicon wafer forms moisture film, transmits P-type crystal silicon wafer using chain type transmitting device, makes P-type crystal silicon
The group-III element doping of piece passes through the first solution upwardly and in a manner of floating.
4. preparation method according to claim 3, which is characterized in that first solution is HF and deionized water is constituted
Solution, HF volumetric concentration are 3~7%, and the transmission speed of the chain type transmitting device is 1.8~2.2m/s.
5. preparation method according to claim 1 or 2, which is characterized in that the step F specific implementation is as follows: in p-type crystalline substance
The phosphorus doping face of body silicon wafer forms moisture film, transmits P-type crystal silicon wafer using chain type transmitting device, mixes the phosphorus of P-type crystal silicon wafer
Beans flour noodle passes through the second solution upwards and in a manner of floating.
6. preparation method according to claim 5, which is characterized in that second solution is HF and deionized water is constituted
Solution, HF volumetric concentration are 3~7%, and the transmission speed of the chain type transmitting device is 1.6~2.0m/s.
7. preparation method according to claim 1, which is characterized in that the alkaline solution in the step G is volumetric concentration
For 2~5% KOH solution, the processing time is 400~800s.
8. preparation method according to claim 1, which is characterized in that the thin oxide layer in the step B is silica
Thin layer；In the step C, group-III element is adulterated during deposit polycrystalline silicon layer or after deposit polycrystalline silicon layer.
9. preparation method according to claim 1, which is characterized in that the step I specific implementation is as follows: by P-type crystal
Silicon wafer is aoxidized, then removes the oxide on surface, then by the surface oxidation of P-type crystal silicon wafer.
10. preparation method according to claim 1, which is characterized in that in the step J, in P-type crystal silicon on piece
III group diffusingsurface is sequentially depositing alumina layer and silicon nitride layer, the deposited silicon nitride on the phosphorus diffusion face of P-type crystal silicon on piece
Layer.
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| CN111816726A (en) * | 2020-06-15 | 2020-10-23 | 隆基绿能科技股份有限公司 | Back contact solar cell, production method thereof and back contact cell assembly |
| CN113161431A (en) * | 2020-12-25 | 2021-07-23 | 浙江晶科能源有限公司 | Silicon-based solar cell and preparation method thereof |
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| CN108365022A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | The preparation method of the black policrystalline silicon PERC battery structures of selective emitter |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
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| CN108365022A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | The preparation method of the black policrystalline silicon PERC battery structures of selective emitter |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
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| CN111816726A (en) * | 2020-06-15 | 2020-10-23 | 隆基绿能科技股份有限公司 | Back contact solar cell, production method thereof and back contact cell assembly |
| CN111816726B (en) * | 2020-06-15 | 2023-10-03 | 隆基绿能科技股份有限公司 | Back contact solar cell, production method thereof and back contact cell assembly |
| CN113161431A (en) * | 2020-12-25 | 2021-07-23 | 浙江晶科能源有限公司 | Silicon-based solar cell and preparation method thereof |
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