CN109119338A - A kind of highback polishing and efficient single crystal process - Google Patents
A kind of highback polishing and efficient single crystal process Download PDFInfo
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- CN109119338A CN109119338A CN201810887869.0A CN201810887869A CN109119338A CN 109119338 A CN109119338 A CN 109119338A CN 201810887869 A CN201810887869 A CN 201810887869A CN 109119338 A CN109119338 A CN 109119338A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000005498 polishing Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 139
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 139
- 239000010703 silicon Substances 0.000 claims abstract description 139
- 238000005530 etching Methods 0.000 claims abstract description 105
- 239000003513 alkali Substances 0.000 claims abstract description 43
- 239000002253 acid Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 238000005406 washing Methods 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000013102 re-test Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000007667 floating Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 90
- 238000005516 engineering process Methods 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002386 leaching Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- 238000010923 batch production Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
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- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
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- 238000005096 rolling process Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of technique for being easy to produce in batches in conjunction with existing producing line, reinforce to silicon chip back side polishing action, and there is promotion to existing battery efficiency, PN junction after survivable diffusion is not easy to form " etching print " and influence battery appearance, stability has biggish guarantee etc., therefore carries on the back present invention employs chain type " acid+alkali+alkali " mode and throw technique.
Description
Technical field
The present invention relates to photovoltaic industry solar energy single crystal cell piece wet etching correlative technology field, more particularly to one kind are new
The highback that type etches chain type " sour throwing+alkali throwing+alkali is thrown " polishes and efficient single crystal process.
Background technique
Current commercialization monocrystalline common process battery manufacturing procedure approximately as: making herbs into wool → diffusion → etching → PE → printing,
Sintering → testing efficiency.This commercialization monocrystalline solar cells manufacturing technology is relatively easy, mature, adapts to large-batch industrial
Production, it is thus possible to be widely applied.
Commercialization monocrystalline common process battery chain type wet process acid etch making technology process and purpose are as follows at present: (1) silicon
Piece uses HF+HNO in etching groove3Nitration mixture removes the back side and surrounding PN junction, while the back side carries out just slightly acid polishing.(2) silicon wafer
By washing 1 slot pure water cleaning.(3) porous silicon of KOH or NaOH solution removal silicon chip surface, and neutralize the acid of silicon chip surface.
(4) silicon wafer is by washing 2 slot pure water cleaning.(5) HF removes the oxide layer of silicon wafer front surface, and neutralizes the alkali on silicon wafer.(6) silicon
Piece is by washing 3 slot pure water cleaning.(7) silicon wafer completes making technology by the dry silicon wafer of drying tank.
Commercialization monocrystalline common process battery slot type wet process alkaline etching making technology process and purpose are as follows at present: (1) silicon
Piece removes the back side and surrounding oxide layer in chain type HF slot, using HF.(2) silicon wafer is cleaned by chain type sink and drying tank is dry
For silicon wafer (3) silicon wafer in slot-type device, aqueous slkali carries out burn into polishing to silicon chip back side and surrounding.(4) silicon wafer passes through groove-type water
It washes.(5) silicon wafer passes through Dipping process, and HF removes the oxide layer of silicon wafer front surface, and neutralizes the alkali on silicon wafer.(6) silicon wafer passes through
Slot type washing.(7) dry silicon wafer is dried, making technology is completed.
Since single crystal battery chain type wet process acid etch making technology is easy to operate by large-scale business processing procedure, but polish
Effect is poor.And single crystal battery slot type wet process alkaline etching making technology back throwing effect is preferable, but processing procedure is cumbersome, equipment is mostly equal to be lacked
Point.Therefore, it is necessary to invent a kind of novel etching technics, keep current etching technics effect further perfect.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the above prior art, one kind is provided and is easy to and existing production
Knot closes the technique of batch production, reinforces having promotion, survivable expansion to silicon chip back side polishing action, and to existing battery efficiency
PN junction after dissipating is not easy to be formed " etching print " and influences battery appearance, stability have it is biggish ensure etc., therefore present invention chain type
" acid+alkali+alkali " mode back throws technique.
The first object of the present invention is to provide a kind of high polishing process of chain type.By changing in conventional Schmid Equipment Foundations
Manufacturing apparatus provides a kind of monocrystalline solar cells back polishing process.Reach backside reflection rate and promote 5%-50%, makes silicon chip back side
Flannelette is more smooth, reaches mirror effect.
The second object of the present invention is can effectively to promote single crystal battery efficiency.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of polishing of highback and efficient single crystal process, the technique the following steps are included:
1) 156.75 × 156.75mm of monocrystalline silicon wafer is used, makes flannelette by conventional process for etching；
2) silicon wafer after making herbs into wool is selected into diffusion furnace PN junction and thickeies oxide coating process；
3) etching feeding uniformly sprays moisture film using the diffusion front of silicon wafer, swims on liquid level into No. 1 slot of etching, silicon wafer four
Week, the back side uniformly with HF, HNO3Medical fluid reaction is removed oxide layer, and preliminary acid polishing to silicon wafer surrounding, the back side；
4) silicon wafer is transmitted between No. 2 slots of No. 1 slot of etching and etching by idler wheel, by being lauched knife hydro-peening silicon wafer on two groups, and
By air knife or catch up with water truck dryer silicon wafer；
5) silicon wafer is transmitted by idler wheel into No. 2 reactive tanks of etching, and silicon wafer is immersed in aqueous slkali using high temperature in No. 2 reactive tanks of etching
Middle mode；Heating plate is mounted in the reservoir that No. 2 reactive tanks of etching and alkali slot share；Etch the storage of No. 2 reservoirs and alkali slot
Liquid bath shares, and reservoir feed flow is divided into two, a part supply No. 2 reactive tanks of etching, a part supply alkali slot reactive tank；
6) silicon wafer is transmitted to 1 slot of washing by idler wheel, by being above lauched knife hydro-peening silicon wafer, and by catching up with water idler wheel to squeeze dring silicon
Piece；
7) silicon wafer is transmitted by idler wheel into alkali slot, and silicon wafer reacts consistent with No. 2 reactive tanks of etching in alkali slot；
8) silicon wafer is transmitted to 2 slots of washing by idler wheel and subsequent acid tank, 3 slots of washing, drying tank complete etch process flow；
9) PECVD filming equipment is used, plates antireflection film in monocrystalline front, subsequent printing back is electric respectively on monocrystalline silicon piece
Pole, Al-BSF, positive electrode, and be sintered and form Ohmic contact, re-test transfer efficiency.
In the technical scheme, the present invention is frequently encountered in the experimental study stage and can be blocked up by mud in No. 2 slot filter cores of etching
Fill in phenomenon.
Script silicon wafer comes out from No. 1 slot of etching passes through turntable, directly into No. 2 slots of etching.It is anti-for etching 1 by analysis
Answering slot medical fluid is HF, HNO3, and etching No. 2 reactive tank medical fluids is C4H13NO, silicon wafer from No. 1 reactive tank of etching come out can by HF,
HNO3Bring No. 2 reactive tanks of etching, HF, HNO into3Meeting and C4H13NO reaction generates salt, mud class to block No. 2 slot filter cores of etching.
In order to solve this abnormal phenomenon, increase pure water cleaning silicon chip, Yi Jixin between No. 2 reactive tanks of No. 1 reactive tank and etching etching
Increase air knife or water idler wheel is caught up with to make dry No. 2 reactive tanks of laggard etching of silicon wafer.Thus avoid as far as possible acid-base neutralization forming salt,
Mud, to block pumping filter core.
The phase encounters efficiency and does not promote the phenomenon that declining instead the present invention before the test, the cell piece back side after theoretical polished backside
Compound reduction, and can efficient absorption long-wave band light, make improved efficiency, rather than decline.Lead to efficiency decline through checking
The reason is that the oxidated layer thickness of silicon chip surface is inadequate, C under the condition of high temperature4H13NO corrodes the oxide layer for breaking through silicon chip surface, and
Continue to destroy PN junction, so as to cause efficiency decline.In order to solve this exception, the present invention spreads work using oxide layer is thickeied
Skill increases to frontside oxide layer sufficiently thick, prevents C in etching 2 slots and alkali slot with sufficiently thick oxide layer4H13NO destroys PN
Knot.
The present invention encounters 2 tank liquor positions of needs raising etching when the phase constructs before the test can be only achieved immersion mode.
Originally 2 slot types of etching are using " idler wheel band liquid " mode, and medical fluid is coated in silicon chip back side by idler wheel rotation, to corrode
The back side and surrounding, requirement can be reached by not needing high liquid level.This etch mode causes back side suede corrosion uneven, reflectivity
Low disadvantage.No. 2 reactive tank front and rear baffles of etching are now improved, work liquid level will be promoted, silicon wafer is immersed in No. 2 reactive tanks of etching
In, medical fluid can sufficiently be reacted with silicon chip back side, thus the efficient polished silicon slice back side.
Preferably, step 2) diffusion is changed on the basis of producing line diffusion technique,
Producing line diffusion technique increases a step newly before going out boat, increases step newly and logical oxygen 1000-5000sccm, big N is arranged2Logical 1000-
10000sccm, time are 3-30 minutes.
Preferably, silicon wafer uses " Overwater-floating " mode in etching 1 slot in step 3), silicon wafer swims in medical fluid surface,
Silicon chip back side, surrounding can be with HF, HNO in etching groove3Sufficiently reaction.
Preferably, silicon wafer goes out to etch No. 1 slot in step 4), into before No. 2 slots of etching, increases water knife, air knife or catch up with water
Idler wheel, silicon wafer is sprayed pure water cleaning by water knife, and water idler wheel or the dry silicon wafer of air knife are caught up in use.
In the technical scheme, 1 slot of etching uses HF, HNO3, and etch 2 slots and use C4H13NO, HF, HNO3With C4H13NO
It will participate in reacting generating salt, mud etc., newly surge and knife, air knife or catch up with water idler wheel that will greatly reduce the generation such as salt, mud.
Preferably, silicon wafer is immersed in No. 2 reactive tanks of etching in step 5), it is heated under the condition of high temperature using medical fluid
C4H13NO solution, temperature control 50-90 DEG C.
In the technical scheme, C4H13The oxide layer reaction rate of NO and front side of silicon wafer is very slow, and C4H13NO and back
Face has had been removed that the exposed pasc reaction rate of oxide layer is very rapid, and the thick oxide layer of front side of silicon wafer can effectively prevent
C4H13NO is reacted with PN junction, to play the role of protecting PN junction, according to C4H13Both NO and silicon wafer tow sides reaction rate
Difference, C4H13NO and the exposed silicon of silicon chip back side play the role of polishing, C4H13NO solution concentration is controlled in 0.5-50%.
Preferably, it is preferred that silicon wafer is transmitted by idler wheel into alkali slot, and principle is consistent with No. 2 slots of etching in 7)；Silicon wafer is leaching
Steep C at high operating temperatures4H13NO solution.In the technical scheme, compared under chain type alkali slot room temperature general in industry using KOH or
Person's NaOH solution has the advantages that polished backside effect is good.
Preferably, device used in the technique includes No. 1 slot of etching, No. 2 slots, sink and alkali slot, etching 1 are etched
Water knife and air knife are equipped between No. 2 slots of number slot and etching or catches up with water idler wheel, and liquid storage trench bottom is equipped with heating plate, etches in No. 1 slot
Portion, which is equipped with, to be etched No. 1 reservoir of No. 1 reactive tank and etching, etches inside No. 2 slots equipped with No. 2 reactive tanks of etching, and No. 2 reactions are etched
It is equipped with baffle before and after slot, etches No. 2 slots and alkali slot shares reservoir, etches No. 1 slot, No. 2 slots of etching, sink and alkali slot and passes through rolling
Wheel shape is at chain type technique.
The beneficial effects of the present invention are:
1. highback polishes etching technics using metal ion chemistry product are not included in chemicals, the metallic pollution of battery is played very
Protective action well, and increase producing line stability；
2. providing a kind of efficient polishing process of novel etching chain type " sour throwing+alkali throwing+alkali is thrown "；
3. the present invention not will form " etching print " and influence battery appearance and lead to the gear that leaks electricity；
4. silicon wafer of the present invention is etching 1 slot, 2 slots of etching and reacting generation bubble in the back side with medical fluid in alkali slot, it is supported silicon
The idler wheel of piece is eliminated in time in transmission process, thus back side flannelette is more uniform compared to slot type alkali throwing flannelette, smooth；
5. applicability of the present invention is extensive, not only currently popular PERC can also be combined in conjunction with conventional single battery process
Battery process.
Detailed description of the invention
Fig. 1 is process flow chart of the invention.
Fig. 2 is the structural schematic diagram of present invention process device.
In figure, No. 11, etching slot；2, No. 2 slots are etched；3, No. 1 reactive tank is etched；4, No. 1 reservoir is etched；5,2 are etched
Number reactive tank；6, sink；7, alkali slot；8, water knife；9, air knife or water idler wheel is caught up with；10, reservoir is shared；11, heating plate；12, it keeps off
Plate；13, idler wheel.
Specific embodiment
Below in conjunction with specific embodiment and attached drawing, the present invention will be further explained:
Referring to Fig.1,156.75 × 156.75 type monocrystalline silicon piece 400 is selected to spread by conventional alkali process for etching using normal pressure
Furnace diffusion production PN junction.On the basis of original diffusion technique, original diffusion technique, which goes out boat back, will increase a step process newly, increase newly
Process time is 5 minutes, leads to O2Flow is 5000sccm, big N2Flow is 10000sccm.400 silicon wafers, use hair after diffusion
Board formula is uniformly divided into the subsequent polishing test of 4 groups of carry out.
Referring to Fig. 2, device used in the present invention includes No. 1 slot 1 of etching, etches No. 2 slots 2, sink 6 and alkali slot 7, etching
Water knife 8 and air knife are equipped between No. 2 slots of No. 1 slot and etching or catches up with water idler wheel 9, and liquid storage trench bottom is equipped with heating plate 11, etches No. 1
No. 2 reactive tanks 5 of etching, etching are equipped with equipped with No. 2 No. 1 reservoir 4 of No. 1 reactive tank 3 of etching and etching, etching slots inside inside slot
It is equipped with baffle 12 before and after No. 2 reactive tanks, etches No. 2 slots and alkali slot shares reservoir 10, etches No. 1 slot, etching No. 2 slots, sinks
Chain type technique is formed by idler wheel 13 with alkali slot.
Embodiment 1
A kind of highback polishing and efficient single crystal process, comprising the following steps:
1) select wherein the 1st group 100 diffusion after monocrystalline silicon piece, etching feeding at uniformly spray moisture film, etch No. 1 slot in
With HF, HNO3Mixed acid solution corrodes silicon wafer surrounding and the back side, and preliminary acid polishing；
2) silicon wafer is transmitted between No. 2 slots of No. 1 slot of etching and etching by idler wheel, by being lauched knife hydro-peening silicon wafer on two groups, and
By air knife or catch up with water truck dryer silicon wafer；
3) silicon wafer is transmitted by idler wheel into No. 2 reactive tanks of etching, and silicon wafer is immersed in C using high temperature in No. 2 reactive tanks of etching4H13NO
Mode in solution, it is 70 DEG C that silicon wafer, which is immersed in temperature, and concentration polishes in 1.0% solution；
4) silicon wafer is transmitted to 1 slot of washing by idler wheel, by being above lauched knife hydro-peening silicon wafer, and by catching up with water idler wheel to squeeze dring silicon
Piece；
5) silicon wafer is transmitted by idler wheel into alkali slot, and silicon wafer is immersed in C using high temperature in alkali slot4H13Mode in NO solution, silicon wafer leaching
Bubble is 70 DEG C in temperature, and concentration polishes in 1.0% solution；
6) silicon wafer is transmitted to 2 slots of washing by idler wheel and subsequent acid tank, 3 slots of washing, drying tank complete etch process flow；
7) PECVD filming equipment is used, plates antireflection film in monocrystalline front, subsequent printing back is electric respectively on monocrystalline silicon piece
Pole, Al-BSF, positive electrode, and be sintered and form Ohmic contact, re-test transfer efficiency.
It illustrates: the back side being carried out to silicon wafer after etching and tests reflectivity, and efficiency survey is carried out to cell piece after sintering
Examination.
Embodiment 2
A kind of highback polishing and efficient single crystal process, comprising the following steps:
1) select wherein the 2nd group 100 diffusion after monocrystalline silicon piece, etching feeding at uniformly spray moisture film, etch No. 1 slot in
With HF, HNO3Mixed acid solution corrodes silicon wafer surrounding and the back side, and preliminary acid polishing；
2) silicon wafer is transmitted between 2 slots of 1 slot of etching and etching by idler wheel, by being lauched knife hydro-peening silicon wafer on two groups, and is passed through
Air knife catches up with water truck dryer silicon wafer；
3) silicon wafer is transmitted by idler wheel into No. 2 reactive tanks of etching, and silicon wafer is immersed in C using high temperature in No. 2 reactive tanks of etching4H13NO
Mode in solution, it is 75 DEG C that silicon wafer, which is immersed in temperature, and concentration polishes in 2.0% solution；
4) silicon wafer is transmitted to 1 slot of washing by idler wheel, by being above lauched knife hydro-peening silicon wafer, and by catching up with water idler wheel to squeeze dring silicon
Piece；
5) silicon wafer is transmitted by idler wheel into alkali slot, and silicon wafer is immersed in C using high temperature in alkali slot4H13Mode in NO solution；Silicon wafer leaching
Bubble is 75 DEG C in temperature, and concentration polishes in 2.0% solution；
6) silicon wafer is transmitted to 2 slots of washing by idler wheel and subsequent acid tank, 3 slots of washing, drying tank complete etch process flow；
7) PECVD filming equipment is used, plates antireflection film in monocrystalline front, subsequent printing back is electric respectively on monocrystalline silicon piece
Pole, Al-BSF, positive electrode, and be sintered and form Ohmic contact, re-test transfer efficiency.
It illustrates: the back side being carried out to silicon wafer after etching and tests reflectivity, and efficiency survey is carried out to cell piece after sintering
Examination.
Embodiment 3
A kind of highback polishing and efficient single crystal process, comprising the following steps:
1) select wherein the 3rd group 100 diffusion after monocrystalline silicon piece, etching feeding at uniformly spray moisture film, etch No. 1 slot in
With HF, HNO3Mixed acid solution corrodes silicon wafer surrounding and the back side, and preliminary acid polishing；
2) silicon wafer is transmitted between 2 slots of 1 slot of etching and etching by idler wheel, by being lauched knife hydro-peening silicon wafer on two groups, and is passed through
Air knife catches up with water truck dryer silicon wafer；
3) silicon wafer is transmitted by idler wheel into No. 2 reactive tanks of etching, and silicon wafer is immersed in C using high temperature in No. 2 reactive tanks of etching4H13NO
Mode in solution, it is 80 DEG C that silicon wafer, which is immersed in temperature, and concentration polishes in 3.0% solution；
4) silicon wafer is transmitted to 1 slot of washing by idler wheel, by being above lauched knife hydro-peening silicon wafer, and by catching up with water idler wheel to squeeze dring silicon
Piece；
5) silicon wafer is transmitted by idler wheel into alkali slot, and silicon wafer is immersed in C using high temperature in alkali slot4H13Mode in NO solution, silicon wafer leaching
Bubble is 80 DEG C in temperature, and concentration polishes in 3.0% solution；
6) silicon wafer is transmitted to 2 slots of washing by idler wheel and subsequent acid tank, 3 slots of washing, drying tank complete etch process flow；
7) PECVD filming equipment is used, plates antireflection film in monocrystalline front, subsequent printing back is electric respectively on monocrystalline silicon piece
Pole, Al-BSF, positive electrode, and be sintered and form Ohmic contact, re-test transfer efficiency.
It illustrates: the back side being carried out to silicon wafer after etching and tests reflectivity, and efficiency survey is carried out to cell piece after sintering
Examination.
Comparative example
Comparative example and 1,2,3 difference of embodiment are as follows: the 4th group 100 use the harsh etching technique of conventional chain type after diffusion, that is, carry on the back
Face is not thrown by back, and other processes are consistent with embodiment.
Silicon chip back side reflectivity and finished battery electrical property, efficiency pair is made after embodiment 1,2,3 and comparative example etching
Than as shown in the table:
1 illustrated embodiment 1,2,3 of table is compared with silicon chip back side reflectivity after comparative example etching:
As can be seen from Table 1 Novel back throw process example 1,2,3 and classical acid etching technics comparative example reflectivity it is high 7.3%,
10.1%, it 12.3% differs, it can be seen that Novel back throws technique has advantage very much.
2 illustrated embodiment 1,2,3 of table is compared with comparative example finished battery electrical property, efficiency variance value:
| Classification | Uoc(mV) | Isc(A) | FF (%) | Eta (%) |
| Comparison | 0 | 0 | 0 | 0 |
| Embodiment 1 | 0.0004 | 0.023 | 0.03 | 0.07 |
| Embodiment 2 | 0.0008 | 0.033 | 0.06 | 0.11 |
| Embodiment 3 | 0.001 | 0.042 | 0.09 | 0.14 |
From 2 electrical property of table, efficiency data combination table 1 it can be seen that as backside reflection rate is promoted, ascendant trend is presented in efficiency,
Middle Uoc, Isc, FF have different degrees of rising.1,2,3 silicon wafer of embodiment carries out back polishing, improves silicon chip back side reflectivity,
Increase the absorption of the general middle medium-long wave band of sunlight.Thus efficiency and electrical property have promotion.
Claims (7)
1. a kind of polishing of highback and efficient single crystal process, which is characterized in that the technique the following steps are included:
1) 156.75 × 156.75mm of monocrystalline silicon wafer is used, makes flannelette by conventional process for etching；
2) silicon wafer after making herbs into wool is selected into diffusion furnace PN junction and thickeies oxide coating process；
3) etching feeding uniformly sprays moisture film using the diffusion front of silicon wafer, swims on liquid level into No. 1 slot of etching, silicon wafer four
Week, the back side uniformly with HF, HNO3Medical fluid reaction is removed oxide layer, and preliminary acid polishing to silicon wafer surrounding, the back side；
4) silicon wafer is transmitted between No. 2 slots of No. 1 slot of etching and etching by idler wheel, by being lauched knife hydro-peening silicon wafer on two groups, and
By air knife or catch up with water truck dryer silicon wafer；
5) silicon wafer is transmitted by idler wheel into No. 2 reactive tanks of etching, and silicon wafer is immersed in aqueous slkali using high temperature in No. 2 reactive tanks of etching
Middle mode；Heating plate is mounted in the reservoir that No. 2 reactive tanks of etching and alkali slot share；Etch the storage of No. 2 reservoirs and alkali slot
Liquid bath shares, and reservoir feed flow is divided into two, a part supply No. 2 reactive tanks of etching, a part supply alkali slot reactive tank；
6) silicon wafer is transmitted to 1 slot of washing by idler wheel, by being above lauched knife hydro-peening silicon wafer, and by catching up with water idler wheel to squeeze dring silicon
Piece；
7) silicon wafer is transmitted by idler wheel into alkali slot, and silicon wafer reacts consistent with No. 2 reactive tanks of etching in alkali slot；
8) silicon wafer is transmitted to 2 slots of washing by idler wheel and subsequent acid tank, 3 slots of washing, drying tank complete etch process flow；
9) PECVD filming equipment is used, plates antireflection film in monocrystalline front, subsequent printing back is electric respectively on monocrystalline silicon piece
Pole, Al-BSF, positive electrode, and be sintered and form Ohmic contact, re-test transfer efficiency.
2. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that step 2) diffusion uses
Oxide coating process is thickeied, is changed on the basis of producing line diffusion technique, producing line diffusion technique increases a step newly before going out boat, increases newly
Logical oxygen 1000-5000sccm, big N is arranged in step2Logical 1000-10000sccm, time are 3-30 minutes.
3. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that silicon wafer exists in step 3)
It etches using " Overwater-floating " mode in 1 slot, silicon wafer swims in medical fluid surface, and silicon chip back side, surrounding can be with HF, HNO in etching groove3
Sufficiently reaction.
4. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that silicon wafer goes out in step 4)
No. 1 slot is etched, into before No. 2 slots of etching, increases water knife, air knife or catches up with water idler wheel, silicon wafer is sprayed pure water cleaning by water knife, and
Using catching up with the dry silicon wafer of water idler wheel or air knife.
5. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that in step 5), silicon wafer
No. 2 reactive tanks of etching are immersed in, are heated to C under the condition of high temperature using medical fluid4H13NO solution, temperature control 50-90 DEG C.
6. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that preferably 7) in, silicon wafer
It is transmitted by idler wheel into alkali slot, principle is consistent with No. 2 slots of etching；Silicon wafer is to impregnate C at high operating temperatures4H13NO solution.
7. a kind of highback polishing according to claim 1 and efficient single crystal process, which is characterized in that used in the technique
Device include No. 1 slot (1) of etching, etch No. 2 slots (2), sink (6) and alkali slot (7) etch between No. 2 slots of No. 1 slot and etching
It equipped with water knife (8) and air knife or catches up with water idler wheel (9), liquid storage trench bottom is equipped with heating plate (11), etches and is equipped with etching inside No. 1 slot
No. 2 reactive tanks (5) of etching are equipped with inside No. 2 No. 1 reservoir (4) of No. 1 reactive tank (3) and etching, etching slots, etch No. 2 reactions
Baffle (12) are equipped with before and after slot, No. 2 slots is etched and alkali slot shares reservoir (10), etch No. 1 slot, No. 2 slots of etching, sink and alkali
Slot forms chain type technique by idler wheel (13).
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