CN103361739A - Method for implementing back polishing in crystalline silicon solar battery production - Google Patents
Method for implementing back polishing in crystalline silicon solar battery production Download PDFInfo
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- CN103361739A CN103361739A CN2013102827620A CN201310282762A CN103361739A CN 103361739 A CN103361739 A CN 103361739A CN 2013102827620 A CN2013102827620 A CN 2013102827620A CN 201310282762 A CN201310282762 A CN 201310282762A CN 103361739 A CN103361739 A CN 103361739A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for implementing back polishing in the crystalline silicon solar battery production. The method is characterized in that a new wet etched alkali tank structure is adopted and divided into two independent parts which are respectively a soaking zone and a spraying zone, wherein the two zones are provided with independent tank bodies and have independent control functions, and the control functions comprise the control on the concentration and the temperature of alkali liquor, water replenishing and liquid medicine addition; and a 'floating on water' manner is adopted in the soaking region of the alkaline tank for completing the back polishing through the corrosion of alkali liquor, and a spraying manner is adopted in the spraying zone of the alkaline tank for spraying the front surface and the back surface of a silicon wafer so as to remove porous silicon on the surface of the silicon wafer. The method can be used for realizing the goal of back polishing in the solar battery production under the condition that the front surface of the silicon wafer is not influenced, is simple to operate and has excellent effects.
Description
Technical field
The invention belongs to crystal silicon solar energy battery and make the field, particularly relate to a kind of method of single face back of the body polishing in wet-method etching equipment realization silicon solar cell is produced.
Background technology
During conventional crystal silicon solar energy battery is produced, can be in cell piece back side printing aluminium back surface field, to reach passivation and the effect that improves the dorsal light reflex rate.If before the printing of aluminium back surface field, silicon chip back side is carried out polished finish, just can form smooth back of the body surface, be conducive to form more uniform back surface field and improve luminous reflectance factor, thereby reduce the compound of back of the body surface and increase spectral response, improve the efficiency of conversion of solar cell.
In silicon solar cell, realize that by the wet etching operation back of the body polishing is one and well selects at present.Take the kuttler etching apparatus as example, adopt main flow process and the purpose of chain type wet-method etching to be: (1) silicon chip makes silicon chip reach hydrophobic effect through the phosphorosilicate glass that HF removes front and back.(2) silicon chip swims in HF/HNO
3The aqueous solution on, realize the removal of edge and back side PN junction, reach simultaneously the effect of certain back of the body polishing; (3) porous silicon of KOH or NaOH solution removal silicon chip surface, and in and silicon chip on acid solution; (4) zone of oxidation of silicon chip is removed in HF acid.
Although present this wet etching can play certain back of the body polishing action, the effect of its polishing still needs further raising, therefore, need invent a kind of new technique and make the back of the body polishing effect of present wet etching further perfect.
Summary of the invention
The present invention is based on the basis of present wet etching, provides a kind of in silicon solar cell is produced, and realizes the method for back of the body polishing, the method can be in the situation that do not affect front side of silicon wafer, realize the target of back of the body polishing in the manufacture of solar cells, simple to operate, effect is superior.
The technical scheme that technical solution problem of the present invention adopts is: the method for implementing back of the body polishing during a kind of crystal silicon solar batteries is produced, it adopts a kind of alkali groove structure of new wet etching, described alkali groove is divided into two independently parts, be respectively soak zone and spray district, there is independently cell body in two zones and has independently controls function, and described control function comprises concentration, temperature and the moisturizing of controlling alkali lye and the function of interpolation liquid; Adopt the mode of " Overwater-floating " at the soak zone of described alkali groove, by alkali lye etch back of the body polishing, adopt the mode of spray in the spray district of described alkali groove, front surface and the back side of silicon chip is sprayed, remove the porous silicon of silicon chip surface.
As a kind of preferred, the cell body length of described alkali groove soak zone is 0.5m ~ 1.5m, and the cell body length in described alkali groove spray district is 0.2m ~ 1.0m.
As a kind of preferred, controlling described alkali groove soak zone temperature is 20 ℃ ~ 60 ℃, and concentration is 5% ~ 40%; Controlling described alkali groove spray district temperature is 20 ℃ ~ 40 ℃, and concentration is 2% ~ 10%.
The invention provides a kind of design of alkali groove of new wet-method etching equipment, thereby realized utilizing the alkali groove to carry on the back the target of polishing.On the one hand, this invention cleverly the alkali groove is divided into soak zone and spray is distinguished two independently parts, can control respectively temperature and the concentration of alkali lye, and moisturizing and interpolation liquid.On the other hand, in the mode of soak zone silicon chip by " Overwater-floating ", under the effect of the alkali lye of comparatively high temps and concentration, realize the polishing of the single face back of the body; The spray district then controls relatively low temperature and concentration, more fully the upper and lower surface spray of silicon chip is removed porous silicon.
Embodiment
A kind of method of utilizing wet etching to realize back of the body polishing, take kuttler equipment as example, specific implementation method is: (1) carries out new design to the alkali groove of etching apparatus, the alkali groove is divided into soak zone distinguishes two independently parts with spray, can independently control concentration, the temperature of alkali lye, and other relevant moisturizings and interpolation liquid.Wherein, the cell body length of soak zone is 0.6m, and the cell body length in spray district is 0.2m.(2) two of the alkali groove cell bodies are joined groove by certain concentration: soak zone concentration of lye 30%, and spray district concentration of lye is 5%; The soak zone temperature is controlled at 50 ℃, and spray district temperature is 20 ℃.(3) silicon chip by washing bath, again through air knife drying, enters the soak zone of alkali groove through the etching groove of etching apparatus, and silicon chip adopts the mode of " Overwater-floating " to pass through at soak zone, and alkali lye is carried on the back polishing to silicon chip.Through behind the soak zone, the alkali lye of silicon chip back side blows off in cell body by air knife.After back of the body polishing process was finished, silicon chip entered the spray district and mainly front side of silicon wafer is cleaned the removal porous silicon.(4) with the sour zone of oxidation of removing silicon chip of HF.
Claims (3)
1. implement the method for back of the body polishing during a crystal silicon solar batteries is produced, it is characterized in that, adopt a kind of alkali groove structure of new wet etching, described alkali groove is divided into two independently parts, be respectively soak zone and spray district, there is independently cell body in two zones and has independently controls function, and described control function comprises concentration, temperature and the moisturizing of controlling alkali lye and the function of interpolation liquid; Adopt the mode of " Overwater-floating " at the soak zone of described alkali groove, by alkali lye etch back of the body polishing, adopt the mode of spray in the spray district of described alkali groove, front surface and the back side of silicon chip is sprayed, remove the porous silicon of silicon chip surface.
2. implement the method for back of the body polishing in producing according to claims 1 described a kind of crystal silicon solar batteries, it is characterized in that, the cell body length of described alkali groove soak zone is 0.5 m ~ 1.5 m, and the cell body length in described alkali groove spray district is 0.2 m ~ 1.0 m.
3. implement the method for back of the body polishing in producing according to claims 1 described a kind of crystal silicon solar batteries, it is characterized in that, controlling described alkali groove soak zone temperature is 20 ℃ ~ 60 ℃, and concentration is 5% ~ 40%; Controlling described alkali groove spray district temperature is 20 ℃ ~ 40 ℃, and concentration is 2% ~ 10%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310282762.0A CN103361739B (en) | 2013-07-08 | 2013-07-08 | A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing |
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| CN201310282762.0A CN103361739B (en) | 2013-07-08 | 2013-07-08 | A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing |
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| CN103361739A true CN103361739A (en) | 2013-10-23 |
| CN103361739B CN103361739B (en) | 2016-01-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505431A (en) * | 2014-12-11 | 2015-04-08 | 东方日升新能源股份有限公司 | Process method for reducing use level of solar battery cell etching acid |
| CN108054093A (en) * | 2017-12-07 | 2018-05-18 | 苏州润阳光伏科技有限公司 | Monocrystalline silicon piece etches polishing method |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN112466774A (en) * | 2019-09-06 | 2021-03-09 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
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| CN104505431A (en) * | 2014-12-11 | 2015-04-08 | 东方日升新能源股份有限公司 | Process method for reducing use level of solar battery cell etching acid |
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| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN112466774A (en) * | 2019-09-06 | 2021-03-09 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
| CN112466774B (en) * | 2019-09-06 | 2023-11-17 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
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| CN103361739B (en) | 2016-01-20 |
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