CN102728573B - Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon - Google Patents
Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon Download PDFInfo
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- CN102728573B CN102728573B CN201210202913.2A CN201210202913A CN102728573B CN 102728573 B CN102728573 B CN 102728573B CN 201210202913 A CN201210202913 A CN 201210202913A CN 102728573 B CN102728573 B CN 102728573B
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- damage layer
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- crystalline silicon
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Abstract
The invention discloses a process for cleaning a damage layer of the reactive ion etching (RIE) flocking surface of crystalline silicon. The process comprises the following steps of: (1) precleaning the damage layer of the surface, which is etched by RIE, of a silicon wafer by using deionized water; (2) preparing a cleaning solution, wherein the cleaning solution is a mixed solution of HF, HCl and H2O2, and a volume ratio of the HF to the HCl to the H2O2 is (3-15):(3-15):(1-5); and (3) cleaning the damage layer of the silicon wafer for 4 to 15 minutes by using the cleaning solution so as to remove the damage layer. According to the cleaning process, the speed of etching the damage layer is low, and a flock structure on the surface of the silicon wafer is not influenced in the etching process, so the process is suitable for the damage removal process of a refined surface structure which is subjected to the RIE flocking of the crystalline silicon; the process is simple, alkaline washing and secondary acid washing are avoided, the process flow is reduced greatly, raw materials are saved, the production cost is reduced, and the process is suitable for industrial production; and the discharge of effluent is reduced substantially, and the burden of subsequent treatment is relieved.
Description
Technical field
The present invention relates to silicon crystal cleaning, be particularly set to a kind of cleaning of crystalline silicon RIE making herbs into wool surface damage layer.
Background technology
In order to improve the efficiency of photovoltaic generation, reduce the cost of photovoltaic generation, so introduced Surface Texture technique, be making herbs into wool.It,, by increasing the absorption of battery to light, reduces surface reflectivity, increases the short circuit current of solar cell to reach the object that improves efficiency of solar cell.People have attempted many new process for etching, as mechanical carving groove, reactive ion etching, honeycomb suede structure technology, electrochemical corrosion etc.At present, reactive ion etching method (RIE) is applied more in industrialization is produced, and on the coarse matte that it can obtain after common process making herbs into wool, forms more meticulous suede structure, greatly reduces reflectivity, improves battery efficiency.
But RIE making herbs into wool also has its weak point, wherein, after topmost problem is making herbs into wool, at silicon chip surface, form damage layer, thickness is at 0.1-0.4 μ m.In producing, crystal silicon solar energy battery industrialization generally can adopt strong basicity (NaOH, KOH) at present, or the aqueous solution of highly acid (HF+HNO3) chemicals cleans the damage layer of silicon chip surface, basic step is: first use HF+HNO3+H2O pickling (to remove surface damage layer, generate SiO2) → NaOH or the KOH alkali cleaning (porous silicon generating after removal pickling, in and remained on surface acid solution) → HF pickling (remove SiO2, in and remained on surface alkali lye).But these routines are removed to damage layer process and be there will be overetch, affect the sunken light effect of silicon chip surface.
Summary of the invention
Object of the present invention is to overcome the deficiency of present technology, a kind of cleaning of crystalline silicon RIE making herbs into wool surface damage layer is provided, solve prior art and because of easy, occur excessive etching when cleaning silicon chip damage layer, thereby have influence on the shortcoming of the sunken light effect of silicon chip surface.
The present invention is achieved through the following technical solutions: a kind of cleaning of crystalline silicon RIE making herbs into wool surface damage layer, comprises the following steps:
(1) damaged layer on surface of silicon slice after RIE etching is carried out to deionized water surface prerinse;
(2) prepare cleaning solution, this cleaning solution is HF, HCl and H
2o
2mixed solution, and HF, HCl and H
2o
2be 3～15:3～15:1～5 by volume;
(3) use the cleaning solution of preparation in step (2) to go damage layer to clean 4～15min to silicon chip, remove the damage layer of RIE etching rear surface, reduce the recombination rate of photo-generated carrier;
(4) by deionized water, silicon chip is cleaned again, standby after drying.
Further, in the cleaning solution described in above-mentioned steps (2), adopt HF, HCl and H
2o
2volume ratio is 3: 7:2, scavenging period 5～6min, the best results of cleaning like this.
The invention has the beneficial effects as follows:
(1) cleaning of the present invention is slower to the etch rate of damage layer, guarantees silicon chip surface suede structure not to be exerted an influence in etching process, be applicable to crystalline silicon RIE making herbs into wool the surface texture that becomes more meticulous go damage process;
(2) technical process is simple, without through alkali cleaning and white picking, has greatly reduced technological process, has saved raw material, lowers production cost, is applicable to industrialization and produces;
(3) discharging of waste liquid amount significantly reduces, and has alleviated the burden of subsequent treatment, is conducive to the optimization of industry industry, has extraordinary development prospect.
The specific embodiment
Below in conjunction with embodiment, the present invention is described in further detail:
[embodiment 1]
A cleaning for crystalline silicon RIE making herbs into wool surface damage layer, comprises the following steps:
(1) damaged layer on surface of silicon slice after RIE etching is carried out to deionized water surface prerinse;
(2) prepare cleaning solution, this cleaning solution is HF, HCl and H
2o
2mixed solution, and HF, HCl and H
2o
2be 3:3:1 by volume;
(3) use the cleaning solution of preparation in step (2) to go damage layer to clean 15min to silicon chip, remove the damage layer of RIE etching rear surface, reduce the recombination rate of photo-generated carrier;
(4) by deionized water, silicon chip is cleaned again, standby after drying.
The minority carrier life time of the silicon chip after having cleaned by the present embodiment is 4.53 μ s
[embodiment 2]
A cleaning for crystalline silicon RIE making herbs into wool surface damage layer, comprises the following steps:
(1) damaged layer on surface of silicon slice after RIE etching is carried out to deionized water surface prerinse;
(2) prepare cleaning solution, this cleaning solution is HF, HCl and H
2o
2mixed solution, and HF, HCl and H
2o
2be 3:7:2 by volume;
(3) use the cleaning solution of preparation in step (2) to go damage layer to clean 6min to silicon chip, remove the damage layer of RIE etching rear surface, reduce the recombination rate of photo-generated carrier;
(4) by deionized water, silicon chip is cleaned again, standby after drying.
The minority carrier life time of the silicon chip after having cleaned by the present embodiment is 8.2 μ s.
[embodiment 3]
A cleaning for crystalline silicon RIE making herbs into wool surface damage layer, comprises the following steps:
(1) damaged layer on surface of silicon slice after RIE etching is carried out to deionized water surface prerinse;
(2) prepare cleaning solution, this cleaning solution is HF, HCl and H
2o
2mixed solution, and HF, HCl and H
2o
2be 15:15:1 by volume;
(3) use the cleaning solution of preparation in step (2) to go damage layer to clean 4min to silicon chip, remove the damage layer of RIE etching rear surface, reduce the recombination rate of photo-generated carrier;
(4) by deionized water, silicon chip is cleaned again, standby after drying.
The minority carrier life time of the silicon chip after having cleaned by the present embodiment is 5.97 μ s.
This cleaning does not have impact substantially on the reflectivity of silicon chip, and the minority carrier life time of silicon chip can reach 4～9 μ s, obtains minority carrier life time 3～5 μ s of silicon chip compared with existing cleaning technique, and effect has greatly improved.
Claims (2)
1. a cleaning for crystalline silicon RIE making herbs into wool surface damage layer, is characterized in that: comprise the following steps:
(1) damaged layer on surface of silicon slice after RIE etching is carried out to deionized water surface prerinse;
(2) prepare cleaning solution, this cleaning solution is HF, HCl and H
2o
2mixed solution, and HF, HCl and H
2o
2be 3:7:2 by volume;
(3) use the cleaning solution of preparation in step (2) to go damage layer to clean 4～15min to silicon chip, remove the damage layer of RIE etching rear surface, reduce the recombination rate of photo-generated carrier;
(4) by deionized water, silicon chip is cleaned again, standby after drying.
2. the cleaning of a kind of crystalline silicon RIE making herbs into wool surface damage layer according to claim 1, is characterized in that: the scavenging period described in step (3) is 5～6min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210202913.2A CN102728573B (en) | 2012-06-19 | 2012-06-19 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210202913.2A CN102728573B (en) | 2012-06-19 | 2012-06-19 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
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| Publication Number | Publication Date |
|---|---|
| CN102728573A CN102728573A (en) | 2012-10-17 |
| CN102728573B true CN102728573B (en) | 2014-12-03 |
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| CN201210202913.2A Expired - Fee Related CN102728573B (en) | 2012-06-19 | 2012-06-19 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985787B (en) * | 2014-05-20 | 2016-03-09 | 新奥光伏能源有限公司 | A kind of etching method of transparent conductive oxide film |
| CN105154268A (en) * | 2015-08-29 | 2015-12-16 | 江西赛维Ldk太阳能高科技有限公司 | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method |
| CN105655445B (en) * | 2016-03-25 | 2017-04-12 | 中节能太阳能科技（镇江）有限公司 | Surface finish cleaning method for RIE silicon wafer |
| CN106409977B (en) * | 2016-11-21 | 2018-02-16 | 新奥光伏能源有限公司 | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell |
| CN109994558B (en) * | 2019-03-27 | 2021-03-09 | 通威太阳能（成都）有限公司 | Preparation method of inverted pyramid-shaped single crystal suede |
| CN111668096A (en) * | 2020-06-22 | 2020-09-15 | 徐文凯 | Etching method and device for third-generation semiconductor |
| CN111696852A (en) * | 2020-06-22 | 2020-09-22 | 徐文凯 | Method for cleaning third generation semiconductor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2841627B2 (en) * | 1990-02-02 | 1998-12-24 | 日本電気株式会社 | Semiconductor wafer cleaning method |
| JPH05166777A (en) * | 1991-12-17 | 1993-07-02 | Nippon Steel Corp | Washing of semiconductor wafer |
| JPH08264499A (en) * | 1995-03-27 | 1996-10-11 | Kanto Chem Co Inc | Cleaning solution for silicon wafer and cleaning method |
| US6129091A (en) * | 1996-10-04 | 2000-10-10 | Taiwan Semiconductor Manfacturing Company | Method for cleaning silicon wafers with deep trenches |
| TW426874B (en) * | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
| CN102097526B (en) * | 2010-10-08 | 2012-08-29 | 常州天合光能有限公司 | Surface damage layer cleaning process for crystal silicon RIE texturing |
| CN102364697B (en) * | 2011-06-30 | 2013-07-24 | 常州天合光能有限公司 | Method for removing micro-damage layer from crystalline silicon surface after RIE (Reactive Ion Etching) flocking |
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| CN102728573A (en) | 2012-10-17 |
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